STL9P3LLH6

STL9P3LLH6 Datasheet P-channel -30 V, 12 mΩ typ., -9 A STripFET™ H6 Power MOSFET in a PowerFLAT™ 3.3x3.3 package Features • • • • Order code VDS RDS(on) max ID STL9P3LLH6 -30 V 15 mΩ -9 A Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Applications D(5, 6, 7, 8) • Switching applications Description G(4) This device is a P-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. S(1, 2, 3) AM01475v4 Product status STL9P3LLH6 Product summary Order code STL9P3LLH6 Marking 9P3L Package PowerFLAT™ 3.3x3.3 Packing Tape and reel DS10145 - Rev 3 - February 2018 For further information contact your local STMicroelectronics sales office. www.st.com STL9P3LLH6 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage -30 V VGS Gate-source voltage ± 20 V Drain current (continuous) at Tpcb = 25 °C -9 A Drain current (continuous) at Tpcb = 100 °C -5.9 A Drain current (pulsed) -36 A 3 W - 55 to 150 °C ID ID IDM (1) PTOT Total dissipation at Tpcb=25 °C Tstg Storage temperature range Tj Operating junction temperature range 1. Pulse width limited by safe operating area. Table 2. Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case 2.5 °C/W Rthj-pcb (1) Thermal resistance junction-pcb 42 °C/W 1. When mounted on FR-4 board of 1inch², 2oz Cu t < 10 s DS10145 - Rev 3 page 2/15 STL9P3LLH6 Electrical characteristics 2 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 3. On /off states Symbol V(BR)DSS IDSS IGSS Parameter Drain-source breakdown voltage Zero gate voltage drain current Gate-body leakage current VGS(th) Gate threshold voltage RDS(on) Static drain-source onresistance Test conditions VGS = 0 V, ID = -1 mA Min. Typ. -30 Unit V VGS = 0 V, VDS = -30 V VGS = 0 V, VDS = -30 V, TC = 125 °C (1) VDS = 0 V, VGS = ± 20 V VDS = VGS, ID = -250 µA Max. -1 µA -10 µA ±100 nA -1 V VGS = -10 V, ID =-4.5 A 12 15 mΩ VGS = -4.5 V, ID = -4.5 A 18 22.5 mΩ Min. Typ. Max. Unit - 2615 - pF - 340 - pF - 235 - pF 1. Defined by design, not subject to production test. Table 4. Dynamic Symbol Parameter Test conditions Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Qg Total gate charge VDD = -15 V, ID = -9 A, - 24 - nC Qgs Gate-source charge - 9 - nC Qgd Gate-drain charge VGS = -4.5 to 0 V (see Figure 13. Gate charge test circuit) - 8 - nC Min. Typ. Max. Unit - 13.2 - ns VDS = -25 V, f = 1 MHz, VGS = 0 V Table 5. Switching times Symbol td(on) tr td(off) tf Parameter Turn-on delay time Test conditions VDD = -15 V, ID = -4.5 A, Rise time RG = 4.7 Ω, VGS = -10 V - 93 - ns Turn-off delay time (see Figure 12. Switching times test circuit for resistive load) - 50 - ns - 18 - ns Min. Typ. Max. Unit -1.1 V Fall time Table 6. Source drain diode Symbol VSD (1) DS10145 - Rev 3 Parameter Forward on voltage Test conditions ISD = -9 A, VGS = 0 V - page 3/15 STL9P3LLH6 Electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit trr Reverse recovery time ISD = -9 A, di/dt = 100 A/µs - 20 ns Qrr Reverse recovery charge VDD = -24 V, Tj=150 °C - 16 nC Reverse recovery current (see Figure 14. Test circuit for inductive load switching and diode recovery times) - -1.6 A IRRM 1. Pulsed: pulse duration = 300 µs, duty cycle 1.5% DS10145 - Rev 3 page 4/15 STL9P3LLH6 Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Note: Note: For the P-channel Power MOSFET, current and voltage polarities are reversed. Figure 1. Safe operating area Figure 2. Thermal impedance GIPG0903166B3P9SOA ID (A) Operation in this area is limited by R DS(on) K 10 1 GIPG0903166B3P9ZTH 0.05 10 -1 tp =10 ms tp =10 ms 10 0 10 0 Rth-pcb tp =1 s T j ≤150 °C Tpcb = 25°C single pulse 10 -1 10 -1 10 -2 V DS (V) 10 1 10 -3 10 -4 Figure 3. Output characteristics ID (A) V GS = 7,8,9,10 V V GS = 6 V GIPG180320161101TCH V DS =5 V 100 V GS = 4 V 80 80 60 60 40 40 V GS = 3 V 20 DS10145 - Rev 3 t p (s) 10 0 120 100 0 0 10 -1 ID (A) 140 V GS = 5 V 120 10 -2 Figure 4. Transfer characteristics GIPG180320161003OCH 140 10 -3 20 1 2 3 4 V DS (V) 0 0 1 2 3 4 5 6 7 V GS (V) page 5/15 STL9P3LLH6 Electrical characteristics (curves) Figure 5. Gate charge vs gate-source voltage V GS (V) R DS(on) (mΩ) GIPG1803166B3PDQVG 10 12 4 11 2 10 10 20 30 40 50 Q g (nC) Figure 7. Capacitance variations C (pF) V GS =10 V 13 6 0 0 GIPG0903166B3P9RID 14 V DD = 15 V ID=9A 8 Figure 6. Static drain-source on-resistance 9 10 15 20 25 30 35 40 I D (A) Figure 8. Normalized gate threshold voltage vs temperature GIPG0903166B3PDCVR V GS(th) (norm.) GIPG0903166B3PDVTH 1.1 I D = 250 µA C ISS 1.0 10 3 f = 1 MHz 0.9 C OSS C RSS 0.8 0.7 10 2 0 5 10 15 20 25 30 V DS (V) Figure 9. Normalized on-resistance vs temperature R DS(on) (norm.) 1.5 GIPG1003166B3PDRON V GS = 10 V 0.6 -75 V (BR)DSS (norm.) 1.08 1.04 1.00 1.00 0.75 0.96 DS10145 - Rev 3 0 25 50 75 100 125 150 I D (A) 25 75 125 T j (°C) Figure 10. Normalized V(BR)DSS vs temperature 1.25 0.5 -50 -25 -25 0.92 -75 GIPG0903166B3PDBDV I D = 1 mA -25 25 75 125 T j (°C) page 6/15 STL9P3LLH6 Electrical characteristics (curves) Figure 11. Source-drain diode forward characteristics V SD (V) GIPG0903166B3PDSDF 1.0 T j = -55 °C 0.9 T j = 25 °C 0.8 0.7 T j = 175 °C 0.6 0.5 0.4 2 DS10145 - Rev 3 4 6 8 10 12 I SD (A) page 7/15 STL9P3LLH6 Test circuits 3 Test circuits Figure 12. Switching times test circuit for resistive load Figure 13. Gate charge test circuit Figure 14. Test circuit for inductive load switching and diode recovery times DS10145 - Rev 3 page 8/15 STL9P3LLH6 Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. DS10145 - Rev 3 page 9/15 STL9P3LLH6 PowerFLAT™ 3.3x3.3 package information 4.1 PowerFLAT™ 3.3x3.3 package information Figure 15. PowerFLAT™ 3.3x3.3 package outline BOTTOM VIEW SIDE VIEW TOP VIEW 8465286_2 DS10145 - Rev 3 page 10/15 STL9P3LLH6 PowerFLAT™ 3.3x3.3 package information Table 7. PowerFLAT™ 3.3x3.3 package mechanical data Dim. mm Min. Typ. Max. A 0.70 0.80 0.90 b 0.25 0.30 0.39 c 0.14 0.15 0.20 D 3.10 3.30 3.50 D1 3.05 3.15 3.25 D2 2.15 2.25 2.35 e 0.55 0.65 0.75 E 3.10 3.30 3.50 E1 2.90 3.00 3.10 E2 1.60 1.70 1.80 H 0.25 0.40 0.55 K 0.65 0.75 0.85 L 0.30 0.45 0.60 L1 0.05 0.15 0.25 L2 θ DS10145 - Rev 3 0.15 8° 10° 12° page 11/15 STL9P3LLH6 PowerFLAT™ 3.3x3.3 package information Figure 16. PowerFLAT™ 3.3x3.3 recommended footprint (dimensions are in mm) 8465286_footprint DS10145 - Rev 3 page 12/15 STL9P3LLH6 Revision history Table 8. Document revision history Date 23-Jan-2014 Revision Changes 1 First release. Modified: title and RDS(on) max value DS10145 - Rev 3 07-Mar-2016 2 20-Feb-2018 3 Modified: Table 2: "Absolute maximum ratings", Table 4: "On /off states", Table 5: "Dynamic", Table 6: "Switching times" and Table 7: "Source drain diode" Minor text changes. Updated Figure 1. Safe operating area and Figure 2. Thermal impedance. Removed maturity status indication from cover page. The document status is production data. page 13/15 STL9P3LLH6 Contents Contents 1 Electrical ratings. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Electrical characteristics (curves). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 4 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4.1 PowerFLAT™ 3.3x3.3 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 DS10145 - Rev 3 page 14/15 STL9P3LLH6 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2018 STMicroelectronics – All rights reserved DS10145 - Rev 3 page 15/15