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STM32F042F6P6TR

STM32F042F6P6TR

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

    TSSOP20_6.5X4.4MM

  • 描述:

    STM32F042F6P6TR

  • 数据手册
  • 价格&库存
STM32F042F6P6TR 数据手册
STM32F042x4 STM32F042x6 ARM®-based 32-bit MCU, up to 32 KB Flash, crystal-less USB FS 2.0, CAN, 9 timers, ADC and comm. interfaces, 2.0 - 3.6 V Datasheet - production data Features • Core: ARM® 32-bit Cortex®-M0 CPU, frequency up to 48 MHz LQFP48 7x7 mm LQFP32 7x7 mm • Memories – 16 to 32 Kbytes of Flash memory – 6 Kbytes of SRAM with HW parity • CRC calculation unit • Reset and power management – Digital and I/Os supply: VDD = 2 V to 3.6 V – Analog supply: VDDA = from VDD to 3.6 V – Selected I/Os: VDDIO2 = 1.65 V to 3.6 V – Power-on/Power down reset (POR/PDR) – Programmable voltage detector (PVD) – Low power modes: Sleep, Stop, Standby – VBAT supply for RTC and backup registers • Clock management – 4 to 32 MHz crystal oscillator – 32 kHz oscillator for RTC with calibration – Internal 8 MHz RC with x6 PLL option – Internal 40 kHz RC oscillator – Internal 48 MHz oscillator with automatic trimming based on ext. synchronization • Up to 38 fast I/Os – All mappable on external interrupt vectors – Up to 24 I/Os with 5 V tolerant capability and 8 with independent supply VDDIO2 • 5-channel DMA controller • One 12-bit, 1.0 µs ADC (up to 10 channels) – Conversion range: 0 to 3.6 V – Separate analog supply: 2.4 V to 3.6 V • Up to 14 capacitive sensing channels for touchkey, linear and rotary touch sensors • Calendar RTC with alarm and periodic wakeup from Stop/Standby January 2017 This is information on a product in full production. UFQFPN48 7x7 mm WLCSP36 UFQFPN32 5x5 mm 2.6x2.7 mm UFQFPN28 4x4 mm TSSOP20 6.5x4.4 mm • Nine timers – One 16-bit advanced-control timer for six channel PWM output – One 32-bit and four 16-bit timers, with up to four IC/OC, OCN, usable for IR control decoding – Independent and system watchdog timers – SysTick timer • Communication interfaces – One I2C interface supporting Fast Mode Plus (1 Mbit/s) with 20 mA current sink, SMBus/PMBus and wakeup – Two USARTs supporting master synchronous SPI and modem control, one with ISO7816 interface, LIN, IrDA, auto baud rate detection and wakeup feature – Two SPIs (18 Mbit/s) with 4 to 16 programmable bit frames, one with I2S interface multiplexed – CAN interface – USB 2.0 full-speed interface, able to run from internal 48 MHz oscillator and with BCD and LPM support • HDMI CEC, wakeup on header reception • Serial wire debug (SWD) • 96-bit unique ID • All packages ECOPACK®2 Table 1. Device summary Reference Part number STM32F042x4 STM32F042F4, STM32F042G4, STM32F042K4, STM32F042T4, STM32F042C4 STM32F042x6 STM32F042F6, STM32F042G6, STM32F042K6, STM32F042T6, STM32F042C6 DocID025832 Rev 5 1/117 www.st.com Contents STM32F042x4 STM32F042x6 Contents 1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 2 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 3 Functional overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 3.1 ARM®-Cortex®-M0 core . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 3.2 Memories . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 3.3 Boot modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 3.4 Cyclic redundancy check calculation unit (CRC) . . . . . . . . . . . . . . . . . . . 14 3.5 Power management . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Power supply schemes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 3.5.2 Power supply supervisors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 3.5.3 Voltage regulator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 3.5.4 Low-power modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 3.6 Clocks and startup . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 3.7 General-purpose inputs/outputs (GPIOs) . . . . . . . . . . . . . . . . . . . . . . . . . 17 3.8 Direct memory access controller (DMA) . . . . . . . . . . . . . . . . . . . . . . . . . . 18 3.9 Interrupts and events . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 3.10 2/117 3.5.1 3.9.1 Nested vectored interrupt controller (NVIC) . . . . . . . . . . . . . . . . . . . . . . 18 3.9.2 Extended interrupt/event controller (EXTI) . . . . . . . . . . . . . . . . . . . . . . 18 Analog-to-digital converter (ADC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 3.10.1 Temperature sensor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 3.10.2 Internal voltage reference (VREFINT) . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 3.10.3 VBAT battery voltage monitoring . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 3.11 Touch sensing controller (TSC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 3.12 Timers and watchdogs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 3.12.1 Advanced-control timer (TIM1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 3.12.2 General-purpose timers (TIM2, 3, 14, 16, 17) . . . . . . . . . . . . . . . . . . . . 22 3.12.3 Independent watchdog (IWDG) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 3.12.4 System window watchdog (WWDG) . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 3.12.5 SysTick timer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 3.13 Real-time clock (RTC) and backup registers . . . . . . . . . . . . . . . . . . . . . . 23 3.14 Inter-integrated circuit interface (I2C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 DocID025832 Rev 5 STM32F042x4 STM32F042x6 Contents 3.15 Universal synchronous/asynchronous receiver/transmitter (USART) . . . 25 3.16 Serial peripheral interface (SPI) / Inter-integrated sound interface (I2S) . 26 3.17 High-definition multimedia interface (HDMI) - consumer electronics control (CEC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 3.18 Controller area network (CAN) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 3.19 Universal serial bus (USB) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 3.20 Clock recovery system (CRS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 3.21 Serial wire debug port (SW-DP) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 4 Pinouts and pin descriptions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 5 Memory mapping . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39 6 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42 6.1 Parameter conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42 6.1.1 Minimum and maximum values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42 6.1.2 Typical values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42 6.1.3 Typical curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42 6.1.4 Loading capacitor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42 6.1.5 Pin input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42 6.1.6 Power supply scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43 6.1.7 Current consumption measurement . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 6.2 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45 6.3 Operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47 6.3.1 General operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47 6.3.2 Operating conditions at power-up / power-down . . . . . . . . . . . . . . . . . . 47 6.3.3 Embedded reset and power control block characteristics . . . . . . . . . . . 48 6.3.4 Embedded reference voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49 6.3.5 Supply current characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49 6.3.6 Wakeup time from low-power mode . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 6.3.7 External clock source characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 6.3.8 Internal clock source characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . 64 6.3.9 PLL characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 68 6.3.10 Memory characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 68 6.3.11 EMC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 69 6.3.12 Electrical sensitivity characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70 DocID025832 Rev 5 3/117 4 Contents 7 STM32F042x4 STM32F042x6 6.3.13 I/O current injection characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . 71 6.3.14 I/O port characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72 6.3.15 NRST pin characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 77 6.3.16 12-bit ADC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 78 6.3.17 Temperature sensor characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . 82 6.3.18 VBAT monitoring characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 82 6.3.19 Timer characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 82 6.3.20 Communication interfaces . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90 7.1 LQFP48 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90 7.2 UFQFPN48 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 93 7.3 WLCSP36 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 96 7.4 LQFP32 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 99 7.5 UFQFPN32 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 101 7.6 UFQFPN28 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 105 7.7 TSSOP20 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 108 7.8 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 111 7.8.1 Reference document . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 111 7.8.2 Selecting the product temperature range . . . . . . . . . . . . . . . . . . . . . . 111 8 Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 113 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 114 4/117 DocID025832 Rev 5 STM32F042x4 STM32F042x6 List of tables List of tables Table 1. Table 2. Table 3. Table 4. Table 5. Table 6. Table 7. Table 8. Table 9. Table 10. Table 11. Table 12. Table 13. Table 14. Table 15. Table 16. Table 17. Table 18. Table 19. Table 20. Table 21. Table 22. Table 23. Table 24. Table 25. Table 26. Table 27. Table 28. Table 29. Table 30. Table 31. Table 32. Table 33. Table 34. Table 35. Table 36. Table 37. Table 38. Table 39. Table 40. Table 41. Table 42. Table 43. Table 44. Table 45. Table 46. Table 47. Device summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 STM32F042x4/x6 device features and peripheral counts . . . . . . . . . . . . . . . . . . . . . . . . . 11 Temperature sensor calibration values. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Internal voltage reference calibration values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Capacitive sensing GPIOs available on STM32F042x4/x6 devices . . . . . . . . . . . . . . . . . . 20 No. of capacitive sensing channels available on STM32F042x devices. . . . . . . . . . . . . . . 21 Timer feature comparison . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Comparison of I2C analog and digital filters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 STM32F042x4/x6 I2C implementation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 STM32F042x4/x6 USART implementation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 STM32F042x4/x6 SPI/I2S implementation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 Legend/abbreviations used in the pinout table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 STM32F042x pin definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 Alternate functions selected through GPIOA_AFR registers for port A . . . . . . . . . . . . . . . 37 Alternate functions selected through GPIOB_AFR registers for port B . . . . . . . . . . . . . . . 38 Alternate functions selected through GPIOF_AFR registers for port F. . . . . . . . . . . . . . . . 38 STM32F042x4/x6 peripheral register boundary addresses . . . . . . . . . . . . . . . . . . . . . . . . 40 Voltage characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45 Current characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46 Thermal characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46 General operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47 Operating conditions at power-up / power-down . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48 Embedded reset and power control block characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 48 Programmable voltage detector characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48 Embedded internal reference voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49 Typical and maximum current consumption from VDD supply at VDD = 3.6 V . . . . . . . . . . 50 Typical and maximum current consumption from the VDDA supply . . . . . . . . . . . . . . . . . 52 Typical and maximum consumption in Stop and Standby modes . . . . . . . . . . . . . . . . . . . 53 Typical and maximum current consumption from the VBAT supply. . . . . . . . . . . . . . . . . . . 54 Typical current consumption, code executing from Flash memory, running from HSE 8 MHz crystal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 Switching output I/O current consumption . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57 Peripheral current consumption . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58 Low-power mode wakeup timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 High-speed external user clock characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 Low-speed external user clock characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61 HSE oscillator characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62 LSE oscillator characteristics (fLSE = 32.768 kHz) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 63 HSI oscillator characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 HSI14 oscillator characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 66 HSI48 oscillator characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 67 LSI oscillator characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 68 PLL characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 68 Flash memory characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 68 Flash memory endurance and data retention . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 69 EMS characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 69 EMI characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70 ESD absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 71 DocID025832 Rev 5 5/117 6 List of tables Table 48. Table 49. Table 50. Table 51. Table 52. Table 53. Table 54. Table 55. Table 56. Table 57. Table 58. Table 59. Table 60. Table 61. Table 62. Table 63. Table 64. Table 65. Table 66. Table 67. Table 68. Table 69. Table 70. Table 71. Table 72. Table 73. Table 74. Table 75. Table 76. 6/117 STM32F042x4 STM32F042x6 Electrical sensitivities . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 71 I/O current injection susceptibility . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72 I/O static characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72 Output voltage characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75 I/O AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 76 NRST pin characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 77 ADC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 78 RAIN max for fADC = 14 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80 ADC accuracy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80 TS characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 82 VBAT monitoring characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 82 TIMx characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 82 IWDG min/max timeout period at 40 kHz (LSI). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83 WWDG min/max timeout value at 48 MHz (PCLK). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83 I2C analog filter characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 84 SPI characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 84 I2S characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 86 USB electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 89 LQFP48 package mechanical data. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 91 UFQFPN48 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 94 WLCSP36 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 96 WLCSP36 recommended PCB design rules . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 97 LQFP32 package mechanical data. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 UFQFPN32 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 103 UFQFPN28 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 105 TSSOP20 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 108 Package thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 111 Ordering information scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 113 Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 114 DocID025832 Rev 5 STM32F042x4 STM32F042x6 List of figures List of figures Figure 1. Figure 2. Figure 3. Figure 4. Figure 5. Figure 6. Figure 7. Figure 8. Figure 9. Figure 10. Figure 11. Figure 12. Figure 13. Figure 14. Figure 15. Figure 16. Figure 17. Figure 18. Figure 19. Figure 20. Figure 21. Figure 22. Figure 23. Figure 24. Figure 25. Figure 26. Figure 27. Figure 28. Figure 29. Figure 30. Figure 31. Figure 32. Figure 33. Figure 34. Figure 35. Figure 36. Figure 37. Figure 38. Figure 39. Figure 40. Figure 41. Figure 42. Figure 43. Figure 44. Figure 45. Figure 46. Figure 47. Figure 48. Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Clock tree . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 LQFP48 package pinout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 UFQFPN48 package pinout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 WLCSP36 package pinout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 LQFP32 package pinout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 UFQFPN32 package pinout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 UFQFPN28 package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 TSSOP20 package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 STM32F042x6 memory map . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39 Pin loading conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42 Pin input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42 Power supply scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43 Current consumption measurement scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 High-speed external clock source AC timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61 Low-speed external clock source AC timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61 Typical application with an 8 MHz crystal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 63 Typical application with a 32.768 kHz crystal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64 HSI oscillator accuracy characterization results for soldered parts . . . . . . . . . . . . . . . . . . 65 HSI14 oscillator accuracy characterization results . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 66 HSI48 oscillator accuracy characterization results . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 67 TC and TTa I/O input characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 74 Five volt tolerant (FT and FTf) I/O input characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . 74 I/O AC characteristics definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 77 Recommended NRST pin protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 78 ADC accuracy characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 81 Typical connection diagram using the ADC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 81 SPI timing diagram - slave mode and CPHA = 0 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85 SPI timing diagram - slave mode and CPHA = 1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85 SPI timing diagram - master mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 86 I2S slave timing diagram (Philips protocol) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 87 I2S master timing diagram (Philips protocol). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 88 LQFP48 package outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90 Recommended footprint for LQFP48 package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 91 LQFP48 package marking example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 92 UFQFPN48 package outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 93 Recommended footprint for UFQFPN48 package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 94 UFQFPN48 package marking example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 95 WLCSP36 package outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 96 Recommended pad footprint for WLCSP36 package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 97 WLCSP36 package marking example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 98 LQFP32 package outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 99 Recommended footprint for LQFP32 package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 LQFP32 package marking example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 101 UFQFPN32 package outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 102 Recommended footprint for UFQFPN32 package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 103 UFQFPN32 package marking example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 104 UFQFPN28 package outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 105 DocID025832 Rev 5 7/117 8 List of figures Figure 49. Figure 50. Figure 51. Figure 52. Figure 53. 8/117 STM32F042x4 STM32F042x6 Recommended footprint for UFQFPN28 package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 106 UFQFPN28 package marking example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 107 TSSOP20 package outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 108 Recommended footprint for TSSOP20 package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 109 TSSOP20 package marking example. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110 DocID025832 Rev 5 STM32F042x4 STM32F042x6 1 Introduction Introduction This datasheet provides the ordering information and mechanical device characteristics of the STM32F042x4/x6 microcontrollers. This document should be read in conjunction with the STM32F0xxxx reference manual (RM0091). The reference manual is available from the STMicroelectronics website www.st.com. For information on the ARM® Cortex®-M0 core, please refer to the Cortex®-M0 Technical Reference Manual, available from the www.arm.com website. DocID025832 Rev 5 9/117 27 Description 2 STM32F042x4 STM32F042x6 Description The STM32F042x4/x6 microcontrollers incorporate the high-performance ARM® Cortex®-M0 32-bit RISC core operating at up to 48 MHz frequency, high-speed embedded memories (up to 32 Kbytes of Flash memory and 6 Kbytes of SRAM), and an extensive range of enhanced peripherals and I/Os. All devices offer standard communication interfaces (one I2C, two SPIs/one I2S, one HDMI CEC and two USARTs), one USB Full-speed device (crystal-less), one CAN, one 12-bit ADC, four 16-bit timers, one 32-bit timer and an advanced-control PWM timer. The STM32F042x4/x6 microcontrollers operate in the -40 to +85 °C and -40 to +105 °C temperature ranges, from a 2.0 to 3.6 V power supply. A comprehensive set of power-saving modes allows the design of low-power applications. The STM32F042x4/x6 microcontrollers include devices in seven different packages ranging from 20 pins to 48 pins with a die form also available upon request. Depending on the device chosen, different sets of peripherals are included. These features make the STM32F042x4/x6 microcontrollers suitable for a wide range of applications such as application control and user interfaces, hand-held equipment, A/V receivers and digital TV, PC peripherals, gaming and GPS platforms, industrial applications, PLCs, inverters, printers, scanners, alarm systems, video intercoms and HVACs. 10/117 DocID025832 Rev 5 STM32F042x4 STM32F042x6 Description Table 2. STM32F042x4/x6 device features and peripheral counts Peripheral Flash memory (Kbyte) STM32F042Fx 16 32 STM32F042G 16 STM32F042K 32 16 SRAM (Kbyte) Timers 16 32 STM32F042C 16 32 6 Advanced control 1 (16-bit) General purpose 4 (16-bit) 1 (32-bit) SPI [I2S](1) Comm. interfaces 32 STM32F042T 1 [1] 2 [1] 2 I C 1 USART 2 CAN 1 USB 1 CEC 1 12-bit ADC (number of channels) 1 (9 ext. + 3 int.) 1 (10 ext. + 3 int.) GPIOs 16 24 26 28 30 38 Capacitive sensing channels 7 11 13 14 14 14 Max. CPU frequency 48 MHz Operating voltage 2.0 to 3.6 V Operating temperature Ambient operating temperature: -40°C to 85°C / -40°C to 105°C Junction temperature: -40°C to 105°C / -40°C to 125°C Packages TSSOP20 UQFPN28 LQFP32 UQFPN32 WLCSP36 LQFP48 UFQFPN48 1. The SPI interfaces can be used either in SPI mode or in I2S audio mode. DocID025832 Rev 5 11/117 27 Description STM32F042x4 STM32F042x6 Figure 1. Block diagram 32:(5 6HULDO:LUH 'HEXJ 2EO )ODVK PHPRU\ LQWHUIDFH 6:&/. 6:',2 DV$) 19,& 65$0 FRQWUROOHU %XVPDWUL[ &257(;0&38 I0$; 0+] 92/75(* 9WR9 9'' )ODVK*3/ 8SWR.% ELW #9'' 65$0 .% #9''$ +6, +6, 3//&/. /6, *3'0$ FKDQQHOV +6, 9'' WR9 966 9'',22.,1 325 5HVHW ,QW 6833/ VDDA VBAT–VSS External backup supply voltage VIN(2) |∆VDDx| |VSSx - VSS| VESD(HBM) Min Max Unit - 0.3 4.0 V - 0.3 4.0 V - 0.3 4.0 V - 0.4 V - 0.3 4.0 Input voltage on FT and FTf pins VSS - 0.3 Input voltage on TTa pins VSS - 0.3 4.0 V Input voltage on any other pin VSS - 0.3 4.0 V Variations between different VDD power pins - 50 mV Variations between all the different ground pins - 50 mV Electrostatic discharge voltage (human body model) VDDIOx + 4.0 V (3) V see Section 6.3.12: Electrical sensitivity characteristics - 1. All main power (VDD, VDDA) and ground (VSS, VSSA) pins must always be connected to the external power supply, in the permitted range. 2. VIN maximum must always be respected. Refer to Table 19: Current characteristics for the maximum allowed injected current values. 3. Valid only if the internal pull-up/pull-down resistors are disabled. If internal pull-up or pull-down resistor is enabled, the maximum limit is 4 V. DocID025832 Rev 5 45/117 89 Electrical characteristics STM32F042x4 STM32F042x6 Table 19. Current characteristics Symbol Ratings Max. ΣIVDD Total current into sum of all VDD power lines (source)(1) 120 ΣIVSS (1) -120 Total current out of sum of all VSS ground lines (sink) IVDD(PIN) Maximum current into each VDD power pin (source) (1) 100 IVSS(PIN) Maximum current out of each VSS ground pin (sink)(1) -100 IIO(PIN) Output current sunk by any I/O and control pin 25 Output current source by any I/O and control pin Total output current sunk by sum of all I/Os and control pins ΣIIO(PIN) IINJ(PIN)(3) -25 (2) 80 Total output current sourced by sum of all I/Os and control pins(2) -80 Total output current sourced by sum of all I/Os supplied by VDDIO2 -40 Injected current on FT and FTf pins -5/+0(4) Injected current on TC and RST pin ±5 Injected current on TTa pins(5) ΣIINJ(PIN) Total injected current (sum of all I/O and control Unit mA ±5 pins)(6) ± 25 1. All main power (VDD, VDDA) and ground (VSS, VSSA) pins must always be connected to the external power supply, in the permitted range. 2. This current consumption must be correctly distributed over all I/Os and control pins. The total output current must not be sunk/sourced between two consecutive power supply pins referring to high pin count QFP packages. 3. A positive injection is induced by VIN > VDDIOx while a negative injection is induced by VIN < VSS. IINJ(PIN) must never be exceeded. Refer to Table 18: Voltage characteristics for the maximum allowed input voltage values. 4. Positive injection is not possible on these I/Os and does not occur for input voltages lower than the specified maximum value. 5. On these I/Os, a positive injection is induced by VIN > VDDA. Negative injection disturbs the analog performance of the device. See note (2) below Table 56: ADC accuracy. 6. When several inputs are submitted to a current injection, the maximum ΣIINJ(PIN) is the absolute sum of the positive and negative injected currents (instantaneous values). Table 20. Thermal characteristics Symbol TSTG TJ 46/117 Ratings Storage temperature range Maximum junction temperature DocID025832 Rev 5 Value Unit –65 to +150 °C 150 °C STM32F042x4 STM32F042x6 Electrical characteristics 6.3 Operating conditions 6.3.1 General operating conditions Table 21. General operating conditions Symbol Parameter Conditions Min Max Unit fHCLK Internal AHB clock frequency - 0 48 fPCLK Internal APB clock frequency - 0 48 VDD Standard operating voltage - 2.0 3.6 V Must not be supplied if VDD is not present 1.65 3.6 V VDD 3.6 2.4 3.6 1.65 3.6 TC and RST I/O -0.3 VDDIOx+0.3 TTa I/O -0.3 VDDA+0.3(1) -0.3 5.5(1) LQFP48 - 364 UFQFPN48 - 606 WLCSP36 - 313 LQFP32 - 351 UFQFPN32 - 526 UFQFPN28 - 170 TSSOP20 - 263 –40 85 –40 105 VDDIO2 VDDA VBAT VIN I/O supply voltage Analog operating voltage (ADC not used) Must have a potential equal to or higher than VDD Analog operating voltage (ADC used) Backup operating voltage - I/O input voltage FT and FTf I/O PD Power dissipation at TA = 85 °C for suffix 6 or TA = 105 °C for suffix 7(2) Maximum power dissipation Ambient temperature for the suffix 7 version Maximum power dissipation –40 105 Low power dissipation(3) –40 125 Suffix 6 version –40 105 Suffix 7 version –40 125 TA TJ V Ambient temperature for the suffix 6 version Junction temperature range Low power dissipation (3) MHz V V mW °C °C °C 1. For operation with a voltage higher than VDDIOx + 0.3 V, the internal pull-up resistor must be disabled. 2. If TA is lower, higher PD values are allowed as long as TJ does not exceed TJmax. See Section 7.8: Thermal characteristics. 3. In low power dissipation state, TA can be extended to this range as long as TJ does not exceed TJmax (see Section 7.8: Thermal characteristicsSection 7.8: Thermal characteristics). 6.3.2 Operating conditions at power-up / power-down The parameters given in Table 22 are derived from tests performed under the ambient temperature condition summarized in Table 21. DocID025832 Rev 5 47/117 89 Electrical characteristics STM32F042x4 STM32F042x6 Table 22. Operating conditions at power-up / power-down Symbol Parameter VDD rise time rate tVDD - VDD fall time rate VDDA rise time rate tVDDA 6.3.3 Conditions - VDDA fall time rate Min Max 0 ∞ 20 ∞ 0 ∞ 20 ∞ Unit µs/V Embedded reset and power control block characteristics The parameters given in Table 23 are derived from tests performed under the ambient temperature and supply voltage conditions summarized in Table 21: General operating conditions. Table 23. Embedded reset and power control block characteristics Symbol VPOR/PDR(1) VPDRhyst tRSTTEMPO(4) Parameter Conditions Min Typ Max Unit Power on/power down reset threshold Falling edge(2) 1.80 1.88 1.96(3) V 1.84(3) 1.92 2.00 V PDR hysteresis - - 40 - mV Reset temporization - 1.50 2.50 4.50 ms Rising edge 1. The PDR detector monitors VDD and also VDDA (if kept enabled in the option bytes). The POR detector monitors only VDD. 2. The product behavior is guaranteed by design down to the minimum VPOR/PDR value. 3. Data based on characterization results, not tested in production. 4. Guaranteed by design, not tested in production. Table 24. Programmable voltage detector characteristics Symbol 48/117 Parameter VPVD0 PVD threshold 0 VPVD1 PVD threshold 1 VPVD2 PVD threshold 2 VPVD3 PVD threshold 3 VPVD4 PVD threshold 4 VPVD5 PVD threshold 5 Conditions Min Typ Max Unit Rising edge 2.1 2.18 2.26 V Falling edge 2 2.08 2.16 V Rising edge 2.19 2.28 2.37 V Falling edge 2.09 2.18 2.27 V Rising edge 2.28 2.38 2.48 V Falling edge 2.18 2.28 2.38 V Rising edge 2.38 2.48 2.58 V Falling edge 2.28 2.38 2.48 V Rising edge 2.47 2.58 2.69 V Falling edge 2.37 2.48 2.59 V Rising edge 2.57 2.68 2.79 V Falling edge 2.47 2.58 2.69 V DocID025832 Rev 5 STM32F042x4 STM32F042x6 Electrical characteristics Table 24. Programmable voltage detector characteristics (continued) Symbol Parameter Conditions Min Typ Max Unit Rising edge 2.66 2.78 2.9 V Falling edge 2.56 2.68 2.8 V Rising edge 2.76 2.88 3 V Falling edge 2.66 2.78 2.9 V VPVD6 PVD threshold 6 VPVD7 PVD threshold 7 VPVDhyst(1) PVD hysteresis - - 100 - mV PVD current consumption - - 0.15 0.26(1) µA IDD(PVD) 1. Guaranteed by design, not tested in production. 6.3.4 Embedded reference voltage The parameters given in Table 25 are derived from tests performed under the ambient temperature and supply voltage conditions summarized in Table 21: General operating conditions. Table 25. Embedded internal reference voltage Symbol VREFINT Parameter Conditions Internal reference voltage –40 °C < TA < +105 °C Min Typ Max Unit 1.2 1.23 1.25 V tSTART ADC_IN17 buffer startup time - - - 10(1) µs tS_vrefint ADC sampling time when reading the internal reference voltage - 4(1) - - µs ∆VREFINT Internal reference voltage spread over the temperature range VDDA = 3 V - - 10(1) mV - - 100(1) - 100(1) ppm/°C TCoeff Temperature coefficient 1. Guaranteed by design, not tested in production. 6.3.5 Supply current characteristics The current consumption is a function of several parameters and factors such as the operating voltage, ambient temperature, I/O pin loading, device software configuration, operating frequencies, I/O pin switching rate, program location in memory and executed binary code. The current consumption is measured as described in Figure 14: Current consumption measurement scheme. All Run-mode current consumption measurements given in this section are performed with a reduced code that gives a consumption equivalent to CoreMark code. DocID025832 Rev 5 49/117 89 Electrical characteristics STM32F042x4 STM32F042x6 Typical and maximum current consumption The MCU is placed under the following conditions: • All I/O pins are in analog input mode • All peripherals are disabled except when explicitly mentioned • • The Flash memory access time is adjusted to the fHCLK frequency: – 0 wait state and Prefetch OFF from 0 to 24 MHz – 1 wait state and Prefetch ON above 24 MHz When the peripherals are enabled fPCLK = fHCLK The parameters given in Table 26 to Table 28 are derived from tests performed under ambient temperature and supply voltage conditions summarized in Table 21: General operating conditions. Parameter Symbol Table 26. Typical and maximum current consumption from VDD supply at VDD = 3.6 V All peripherals enabled(1) Conditions 50/117 Supply current in Run mode, code executing from Flash memory IDD Max @ TA(2) fHCLK Max @ TA(2) HSE bypass, PLL on HSE bypass, PLL off HSI clock, PLL on HSI clock, PLL off Unit Typ Typ HSI48 All peripherals disabled 25 °C 85 °C 105 °C 25 °C 85 °C 105 °C 48 MHz 20.3 23.2 23.4 24.6 12.7 14.4 14.4 14.7 48 MHz 20.2 22.9 23.0 23.9 12.6 14.1 14.3 14.4 32 MHz 14.0 16.0 16.1 16.7 8.7 9.5 9.7 10.3 24 MHz 11.0 13.5 13.7 13.8 6.9 7.6 7.8 8.2 8 MHz 3.9 5.2 5.3 5.6 2.6 3.1 3.2 3.3 1 MHz 0.9 1.3 1.5 1.8 0.7 1.0 1.1 1.3 48 MHz 20.5 23.1 23.3 23.6 12.8 14.6 14.6 15.0 32 MHz 14.3 15.6 15.9 17.0 8.6 9.5 9.7 10.0 24 MHz 11.2 13.6 13.8 14.8 6.9 7.4 7.5 7.7 8 MHz 4.1 5.2 5.3 5.6 2.6 3.1 3.1 3.3 DocID025832 Rev 5 mA STM32F042x4 STM32F042x6 Electrical characteristics Parameter Symbol Table 26. Typical and maximum current consumption from VDD supply at VDD = 3.6 V (continued) All peripherals enabled(1) Conditions Supply current in Run mode, code executing from RAM Supply current in Sleep mode IDD Max @ TA(2) fHCLK Max @ TA(2) 48 MHz 19.3 Unit Typ Typ HSI48 All peripherals disabled 25 °C 85 °C 105 °C 21.9 22.1 23.7 22.0 22.1(3) 85 °C 105 °C 11.9 13.4 13.6 13.7 11.7 13.3(3) 13.5 13.7(3) 48 MHz 19.2 32 MHz 13.4 15.8 15.9 16.0 7.9 8.8 8.9 9.7 24 MHz 10.3 12.6 13.0 13.4 6.2 8.0 8.2 8.3 8 MHz 3.6 4.1 4.3 4.4 2.0 2.1 2.1 2.5 1 MHz 0.8 0.9 0.9 1.1 0.4 0.5 0.6 0.8 48 MHz 19.5 22.0 22.1 22.5 11.8 13.6 13.8 13.9 32 MHz 13.5 16.3 16.4 16.6 8.0 8.8 9.1 9.9 24 MHz 10.5 12.8 13.0 13.8 6.5 8.0 8.1 8.4 HSI clock, PLL off 8 MHz 3.7 4.7 5.0 5.3 2.1 2.3 2.4 3.0 HSI48 48 MHz 12.4 15.1 16.3 16.7 3.0 3.2 3.3 3.4 48 MHz 12.3 15.0(3) 16.0 16.2(3) 2.9 3.2(3) 3.3 3.4(3) 32 MHz 8.5 10.6 11.2 11.7 1.9 2.1 2.2 2.5 24 MHz 6.5 8.1 8.5 8.7 1.6 1.8 1.8 1.9 8 MHz 2.3 3.0 3.1 3.2 0.7 0.8 0.8 0.9 1 MHz 0.4 0.4 0.4 0.6 0.1 0.3 0.3 0.4 48 MHz 12.4 15.3 15.7 15.9 3.0 3.0 3.2 3.4 32 MHz 8.6 10.7 11.3 11.6 2.1 2.2 2.2 2.5 24 MHz 6.6 8.4 8.7 8.9 1.6 1.6 1.7 1.9 8 MHz 2.4 3.2 3.4 3.6 0.6 0.8 0.9 1.0 HSE bypass, PLL on HSE bypass, PLL off HSI clock, PLL on HSE bypass, PLL on HSE bypass, PLL off HSI clock, PLL on HSI clock, PLL off 21.8 (3) 25 °C mA 1. USB is kept disabled as this IP functions only with a 48 MHz clock. 2. Data based on characterization results, not tested in production unless otherwise specified. 3. Data based on characterization results and tested in production (using one common test limit for sum of IDD and IDDA). DocID025832 Rev 5 51/117 89 Electrical characteristics STM32F042x4 STM32F042x6 Table 27. Typical and maximum current consumption from the VDDA supply VDDA = 2.4 V Symbol Parameter Conditions (1) IDDA Max @ TA(2) fHCLK Max @ TA(2) HSE bypass, PLL on HSE bypass, PLL off HSI clock, PLL on HSI clock, PLL off 48 MHz 309 Unit Typ Typ HSI48 Supply current in Run or Sleep mode, code executing from Flash memory or RAM VDDA = 3.6 V 25 °C 85 °C 105 °C 325 332 342 167 (3) 176 179 (3) 25 °C 85 °C 105 °C 317 161 334 (3) 181 338 344 193 197(3) 48 MHz 148 32 MHz 102 119 124 126 111 128 135 137 24 MHz 80 95 99 100 88 102 106 108 8 MHz 2.7 3.7 4.2 4.5 3.5 4.7 5.2 5.5 1 MHz 2.7 3.7 4.2 4.2 3.6 4.7 5.2 5.5 48 MHz 220 242 251 254 242 264 275 279 32 MHz 173 193 200 202 191 211 219 221 24 MHz 151 169 175 177 167 184 191 193 8 MHz 72 82 85 85 82 92 95 95 µA 1. Current consumption from the VDDA supply is independent of whether the digital peripherals are enabled or disabled, being in Run or Sleep mode or executing from Flash memory or RAM. Furthermore, when the PLL is off, IDDA is independent from the frequency. 2. Data based on characterization results, not tested in production unless otherwise specified. 3. Data based on characterization results and tested in production (using one common test limit for sum of IDD and IDDA). 52/117 DocID025832 Rev 5 STM32F042x4 STM32F042x6 Electrical characteristics 2.0 V 2.4 V 2.7 V 3.0 V 3.3 V 3.6 V TA = TA = TA = 25°C 85°C 105°C 14.3 14.5 14.6 14.7 14.8 14.9 21.0 47.0 64.0 2.9 3.1 3.2 3.3 3.4 3.5 6.5 32.0 44.0 LSI ON and IWDG ON 0.8 0.9 1.1 1.2 1.3 1.5 - - - LSI OFF and IWDG OFF 0.6 0.7 0.8 0.9 1.0 1.1 2.0 2.5 3.0 Regulator in run mode, all oscillators OFF 2.0 2.1 2.2 2.4 2.5 2.7 3.5 3.5 4.5 Regulator in low-power mode, all oscillators OFF 2.0 2.1 2.2 2.4 2.5 2.7 3.5 3.5 4.5 LSI ON and IWDG ON 2.4 2.6 2.8 3.0 3.1 3.4 - - - LSI OFF and IWDG OFF 1.9 2.0 2.1 2.3 2.4 2.5 3.4 3.5 4.5 Regulator in run mode, all oscillators OFF 1.3 1.3 1.3 1.4 1.4 1.5 - - - Regulator in low-power mode, all oscillators OFF 1.3 1.3 1.3 1.4 1.4 1.5 - - - LSI ON and IWDG ON 1.7 1.8 1.8 2.0 2.1 2.2 - - - LSI OFF and IWDG OFF 1.1 1.2 1.2 1.3 1.3 1.4 - - - Supply current in Standby mode Supply current in Stop mode Supply current in Standby mode VDDA monitoring ON Supply current in Stop mode Regulator in lowpower mode, all oscillators OFF Supply current in Stop mode Supply current in Standby mode VDDA monitoring OFF IDDA Unit Conditions Regulator in run mode, all oscillators OFF IDD Max(1) Typ @VDD (VDD = VDDA) Parameter Symbol Table 28. Typical and maximum consumption in Stop and Standby modes µA 1. Data based on characterization results, not tested in production unless otherwise specified. DocID025832 Rev 5 53/117 89 Electrical characteristics STM32F042x4 STM32F042x6 Table 29. Typical and maximum current consumption from the VBAT supply Max(1) Typ @ VBAT 2.4 V 2.7 V 3.3 V 3.6 V RTC domain IDD_VBAT supply current Conditions 1.8 V Parameter 1.65 V Symbol TA = 25 °C LSE & RTC ON; “Xtal mode”: lower driving capability; LSEDRV[1:0] = '00' 0.5 0.5 0.6 0.7 0.9 1.1 1.2 LSE & RTC ON; “Xtal mode” higher driving capability; LSEDRV[1:0] = '11' 0.8 TA = TA = 85 °C 105 °C 1.5 Unit 2.0 µA 0.9 1.1 1.2 1.4 1.5 1.6 2.0 2.6 1. Data based on characterization results, not tested in production. Typical current consumption The MCU is placed under the following conditions: 54/117 • VDD = VDDA = 3.3 V • All I/O pins are in analog input configuration • The Flash memory access time is adjusted to fHCLK frequency: – 0 wait state and Prefetch OFF from 0 to 24 MHz – 1 wait state and Prefetch ON above 24 MHz • When the peripherals are enabled, fPCLK = fHCLK • PLL is used for frequencies greater than 8 MHz • AHB prescaler of 2, 4, 8 and 16 is used for the frequencies 4 MHz, 2 MHz, 1 MHz and 500 kHz respectively DocID025832 Rev 5 STM32F042x4 STM32F042x6 Electrical characteristics Table 30. Typical current consumption, code executing from Flash memory, running from HSE 8 MHz crystal Typical consumption in Run mode Symbol Parameter Typical consumption in Sleep mode fHCLK Unit Peripherals Peripherals Peripherals Peripherals enabled disabled enabled disabled IDD IDDA Current consumption from VDD supply Current consumption from VDDA supply 48 MHz 20.7 12.8 12.3 3.4 36 MHz 15.9 9.9 9.5 2.7 32 MHz 14.3 9.0 8.5 2.5 24 MHz 11.0 7.1 6.6 2.1 16 MHz 7.7 5.0 4.7 1.6 8 MHz 4.3 3.0 2.7 1.2 4 MHz 2.6 2.0 1.7 0.9 2 MHz 1.8 1.5 1.2 0.8 1 MHz 1.4 1.2 1.0 0.8 500 kHz 1.2 1.1 0.8 0.7 48 MHz 163.3 36 MHz 124.3 32 MHz 111.9 24 MHz 87.1 16 MHz 62.5 8 MHz 2.5 4 MHz 2.5 2 MHz 2.5 1 MHz 2.5 500 kHz 2.5 mA μA I/O system current consumption The current consumption of the I/O system has two components: static and dynamic. I/O static current consumption All the I/Os used as inputs with pull-up generate current consumption when the pin is externally held low. The value of this current consumption can be simply computed by using the pull-up/pull-down resistors values given in Table 50: I/O static characteristics. For the output pins, any external pull-down or external load must also be considered to estimate the current consumption. Additional I/O current consumption is due to I/Os configured as inputs if an intermediate voltage level is externally applied. This current consumption is caused by the input Schmitt DocID025832 Rev 5 55/117 89 Electrical characteristics STM32F042x4 STM32F042x6 trigger circuits used to discriminate the input value. Unless this specific configuration is required by the application, this supply current consumption can be avoided by configuring these I/Os in analog mode. This is notably the case of ADC input pins which should be configured as analog inputs. Caution: Any floating input pin can also settle to an intermediate voltage level or switch inadvertently, as a result of external electromagnetic noise. To avoid current consumption related to floating pins, they must either be configured in analog mode, or forced internally to a definite digital value. This can be done either by using pull-up/down resistors or by configuring the pins in output mode. I/O dynamic current consumption In addition to the internal peripheral current consumption measured previously (see Table 32: Peripheral current consumption), the I/Os used by an application also contribute to the current consumption. When an I/O pin switches, it uses the current from the I/O supply voltage to supply the I/O pin circuitry and to charge/discharge the capacitive load (internal or external) connected to the pin: I SW = V DDIOx × f SW × C where ISW is the current sunk by a switching I/O to charge/discharge the capacitive load VDDIOx is the I/O supply voltage fSW is the I/O switching frequency C is the total capacitance seen by the I/O pin: C = CINT + CEXT + CS CS is the PCB board capacitance including the pad pin. The test pin is configured in push-pull output mode and is toggled by software at a fixed frequency. 56/117 DocID025832 Rev 5 STM32F042x4 STM32F042x6 Electrical characteristics Table 31. Switching output I/O current consumption Symbol Parameter Conditions(1) VDDIOx = 3.3 V C =CINT VDDIOx = 3.3 V CEXT = 0 pF C = CINT + CEXT+ CS VDDIOx = 3.3 V CEXT = 10 pF C = CINT + CEXT+ CS ISW I/O current consumption VDDIOx = 3.3 V CEXT = 22 pF C = CINT + CEXT+ CS VDDIOx = 3.3 V CEXT = 33 pF C = CINT + CEXT+ CS VDDIOx = 3.3 V CEXT = 47 pF C = CINT + CEXT+ CS C = Cint VDDIOx = 2.4 V CEXT = 47 pF C = CINT + CEXT+ CS C = Cint I/O toggling frequency (fSW) Typ 4 MHz 0.07 8 MHz 0.15 16 MHz 0.31 24 MHz 0.53 48 MHz 0.92 4 MHz 0.18 8 MHz 0.37 16 MHz 0.76 24 MHz 1.39 48 MHz 2.188 4 MHz 0.32 8 MHz 0.64 16 MHz 1.25 24 MHz 2.23 48 MHz 4.442 4 MHz 0.49 8 MHz 0.94 16 MHz 2.38 24 MHz 3.99 4 MHz 0.64 8 MHz 1.25 16 MHz 3.24 24 MHz 5.02 4 MHz 0.81 8 MHz 1.7 16 MHz 3.67 4 MHz 0.66 8 MHz 1.43 16 MHz 2.45 24 MHz 4.97 Unit mA 1. CS = 7 pF (estimated value). DocID025832 Rev 5 57/117 89 Electrical characteristics STM32F042x4 STM32F042x6 On-chip peripheral current consumption The current consumption of the on-chip peripherals is given in Table 32. The MCU is placed under the following conditions: • All I/O pins are in analog mode • All peripherals are disabled unless otherwise mentioned • The given value is calculated by measuring the current consumption • – with all peripherals clocked off – with only one peripheral clocked on Ambient operating temperature and supply voltage conditions summarized in Table 18: Voltage characteristics Table 32. Peripheral current consumption Peripheral AHB 58/117 Typical consumption at 25 °C BusMatrix(1) 2.2 CRC 1.9 DMA 5.1 Flash memory interface 15.0 GPIOA 8.2 GPIOB 7.7 GPIOC 2.1 GPIOF 1.8 SRAM 1.1 TSC 4.9 All AHB peripherals 49.8 DocID025832 Rev 5 Unit µA/MHz STM32F042x4 STM32F042x6 Electrical characteristics Table 32. Peripheral current consumption (continued) Peripheral APB-Bridge APB Typical consumption at 25 °C (2) Unit 2.9 ADC(3) 3.9 CAN 12.9 CEC 1.5 CRS 1.0 DBG (MCU Debug Support) 0.2 I2C1 3.6 PWR 1.4 SPI1 8.5 SPI2 6.1 SYSCFG 1.8 TIM1 15.1 TIM2 16.8 TIM3 11.7 TIM14 5.5 TIM16 7.0 TIM17 6.9 USART1 17.8 USART2 5.6 USB 4.9 WWDG 1.4 All APB peripherals µA/MHz 136.7 1. The BusMatrix is automatically active when at least one master is ON (CPU, DMA). 2. The APB Bridge is automatically active when at least one peripheral is ON on the Bus. 3. The power consumption of the analog part (IDDA) of peripherals such as ADC is not included. Refer to the tables of characteristics in the subsequent sections. DocID025832 Rev 5 59/117 89 Electrical characteristics 6.3.6 STM32F042x4 STM32F042x6 Wakeup time from low-power mode The wakeup times given in Table 33 are the latency between the event and the execution of the first user instruction. The device goes in low-power mode after the WFE (Wait For Event) instruction, in the case of a WFI (Wait For Interruption) instruction, 16 CPU cycles must be added to the following timings due to the interrupt latency in the Cortex M0 architecture. The SYSCLK clock source setting is kept unchanged after wakeup from Sleep mode. During wakeup from Stop or Standby mode, SYSCLK takes the default setting: HSI 8 MHz. The wakeup source from Sleep and Stop mode is an EXTI line configured in event mode. The wakeup source from Standby mode is the WKUP1 pin (PA0). All timings are derived from tests performed under the ambient temperature and supply voltage conditions summarized in Table 21: General operating conditions.. Table 33. Low-power mode wakeup timings Typ @VDD = VDDA Symbol Parameter Conditions Max Unit = 2.0 V = 2.4 V = 2.7 V tWUSTOP Wakeup from Stop mode Wakeup from tWUSTANDBY Standby mode tWUSLEEP 6.3.7 = 3.3 V Regulator in run mode 3.2 3.1 2.9 2.9 2.8 5 Regulator in low power mode 7.0 5.8 5.2 4.9 4.6 9 - Wakeup from Sleep mode =3V µs 60.4 - 55.6 53.5 52 51 4 SYSCLK cycles - External clock source characteristics High-speed external user clock generated from an external source In bypass mode the HSE oscillator is switched off and the input pin is a standard GPIO. The external clock signal has to respect the I/O characteristics in Section 6.3.14. However, the recommended clock input waveform is shown in Figure 15: High-speed external clock source AC timing diagram. Table 34. High-speed external user clock characteristics Symbol 60/117 Parameter(1) Min Typ Max Unit - 8 32 MHz fHSE_ext User external clock source frequency VHSEH OSC_IN input pin high level voltage 0.7 VDDIOx - VDDIOx VHSEL OSC_IN input pin low level voltage VSS - 0.3 VDDIOx 15 - - tw(HSEH) tw(HSEL) OSC_IN high or low time tr(HSE) tf(HSE) OSC_IN rise or fall time V ns DocID025832 Rev 5 - - 20 STM32F042x4 STM32F042x6 Electrical characteristics 1. Guaranteed by design, not tested in production. Figure 15. High-speed external clock source AC timing diagram WZ +6(+ 9+6(+  9+6(/  WU +6( WI +6( W WZ +6(/ 7+6( 069 Low-speed external user clock generated from an external source In bypass mode the LSE oscillator is switched off and the input pin is a standard GPIO. The external clock signal has to respect the I/O characteristics in Section 6.3.14. However, the recommended clock input waveform is shown in Figure 16. Table 35. Low-speed external user clock characteristics Parameter(1) Symbol fLSE_ext User external clock source frequency Min Typ Max Unit - 32.768 1000 kHz VLSEH OSC32_IN input pin high level voltage 0.7 VDDIOx - VDDIOx VLSEL OSC32_IN input pin low level voltage VSS - 0.3 VDDIOx 450 - - - - 50 tw(LSEH) OSC32_IN high or low time tw(LSEL) tr(LSE) tf(LSE) V ns OSC32_IN rise or fall time 1. Guaranteed by design, not tested in production. Figure 16. Low-speed external clock source AC timing diagram WZ /6(+ 9/6(+  9/6(/  WU /6( WI /6( WZ /6(/ W 7/6( 069 DocID025832 Rev 5 61/117 89 Electrical characteristics STM32F042x4 STM32F042x6 High-speed external clock generated from a crystal/ceramic resonator The high-speed external (HSE) clock can be supplied with a 4 to 32 MHz crystal/ceramic resonator oscillator. All the information given in this paragraph are based on design simulation results obtained with typical external components specified in Table 36. In the application, the resonator and the load capacitors have to be placed as close as possible to the oscillator pins in order to minimize output distortion and startup stabilization time. Refer to the crystal resonator manufacturer for more details on the resonator characteristics (frequency, package, accuracy). Table 36. HSE oscillator characteristics Symbol fOSC_IN RF Conditions(1) Min(2) Typ Max(2) Unit Oscillator frequency - 4 8 32 MHz Feedback resistor - - 200 - kΩ - - 8.5 VDD = 3.3 V, Rm = 30 Ω, CL = 10 pF@8 MHz - 0.4 - VDD = 3.3 V, Rm = 45 Ω, CL = 10 pF@8 MHz - 0.5 - VDD = 3.3 V, Rm = 30 Ω, CL = 5 pF@32 MHz - 0.8 - VDD = 3.3 V, Rm = 30 Ω, CL = 10 pF@32 MHz - 1 - VDD = 3.3 V, Rm = 30 Ω, CL = 20 pF@32 MHz - 1.5 - Startup 10 - - mA/V VDD is stabilized - 2 - ms Parameter (3) During startup IDD gm tSU(HSE)(4) HSE current consumption Oscillator transconductance Startup time mA 1. Resonator characteristics given by the crystal/ceramic resonator manufacturer. 2. Guaranteed by design, not tested in production. 3. This consumption level occurs during the first 2/3 of the tSU(HSE) startup time 4. tSU(HSE) is the startup time measured from the moment it is enabled (by software) to a stabilized 8 MHz oscillation is reached. This value is measured for a standard crystal resonator and it can vary significantly with the crystal manufacturer For CL1 and CL2, it is recommended to use high-quality external ceramic capacitors in the 5 pF to 20 pF range (Typ.), designed for high-frequency applications, and selected to match the requirements of the crystal or resonator (see Figure 17). CL1 and CL2 are usually the same size. The crystal manufacturer typically specifies a load capacitance which is the series combination of CL1 and CL2. PCB and MCU pin capacitance must be included (10 pF can be used as a rough estimate of the combined pin and board capacitance) when sizing CL1 and CL2. Note: 62/117 For information on selecting the crystal, refer to the application note AN2867 “Oscillator design guide for ST microcontrollers” available from the ST website www.st.com. DocID025832 Rev 5 STM32F042x4 STM32F042x6 Electrical characteristics Figure 17. Typical application with an 8 MHz crystal 5HVRQDWRUZLWKLQWHJUDWHG FDSDFLWRUV &/ 26&B,1 0+] UHVRQDWRU &/ 5(;7  I+6( 5) %LDV FRQWUROOHG JDLQ 26&B287 069 1. REXT value depends on the crystal characteristics. Low-speed external clock generated from a crystal resonator The low-speed external (LSE) clock can be supplied with a 32.768 kHz crystal resonator oscillator. All the information given in this paragraph are based on design simulation results obtained with typical external components specified in Table 37. In the application, the resonator and the load capacitors have to be placed as close as possible to the oscillator pins in order to minimize output distortion and startup stabilization time. Refer to the crystal resonator manufacturer for more details on the resonator characteristics (frequency, package, accuracy). Table 37. LSE oscillator characteristics (fLSE = 32.768 kHz) Symbol LSE current consumption IDD Oscillator transconductance gm tSU(LSE) Parameter (3) Startup time Conditions(1) Min(2) Typ Max(2) Unit low drive capability - 0.5 0.9 medium-low drive capability - - 1 medium-high drive capability - - 1.3 high drive capability - - 1.6 low drive capability 5 - - medium-low drive capability 8 - - medium-high drive capability 15 - - high drive capability 25 - - VDDIOx is stabilized - 2 - µA µA/V s 1. Refer to the note and caution paragraphs below the table, and to the application note AN2867 “Oscillator design guide for ST microcontrollers”. 2. Guaranteed by design, not tested in production. 3. tSU(LSE) is the startup time measured from the moment it is enabled (by software) to a stabilized 32.768 kHz oscillation is reached. This value is measured for a standard crystal and it can vary significantly with the crystal manufacturer DocID025832 Rev 5 63/117 89 Electrical characteristics Note: STM32F042x4 STM32F042x6 For information on selecting the crystal, refer to the application note AN2867 “Oscillator design guide for ST microcontrollers” available from the ST website www.st.com. Figure 18. Typical application with a 32.768 kHz crystal 5HVRQDWRUZLWKLQWHJUDWHG FDSDFLWRUV &/ 26&B,1 I/6( 'ULYH SURJUDPPDEOH DPSOLILHU N+] UHVRQDWRU 26&B287 &/ 069 Note: An external resistor is not required between OSC32_IN and OSC32_OUT and it is forbidden to add one. 6.3.8 Internal clock source characteristics The parameters given in Table 38 are derived from tests performed under ambient temperature and supply voltage conditions summarized in Table 21: General operating conditions. The provided curves are characterization results, not tested in production. 64/117 DocID025832 Rev 5 STM32F042x4 STM32F042x6 Electrical characteristics High-speed internal (HSI) RC oscillator Table 38. HSI oscillator characteristics(1) Symbol Parameter fHSI Conditions Min Typ - - Frequency TRIM HSI user trimming step DuCy(HSI) Duty cycle Accuracy of the HSI oscillator ACCHSI - - - (2) 45 IDDA(HSI) Unit 8 - MHz - (2) - % 1 (2) 55 % TA = -40 to 105°C (3) -2.8 - 3.8 TA = -10 to 85°C -1.9(3) - 2.3(3) TA = 0 to 85°C -1.9(3) - 2(3) TA = 0 to 70°C -1.3(3) - 2(3) TA = 0 to 55°C -1(3) - 2(3) -1 - 1 - 2(2) µs 80 100(2) µA TA = 25°C(4) tsu(HSI) Max HSI oscillator startup time - 1(2) HSI oscillator power consumption - - (3) % 1. VDDA = 3.3 V, TA = -40 to 105°C unless otherwise specified. 2. Guaranteed by design, not tested in production. 3. Data based on characterization results, not tested in production. 4. Factory calibrated, parts not soldered. Figure 19. HSI oscillator accuracy characterization results for soldered parts  ."9 .*/             5  "     069 DocID025832 Rev 5 65/117 89 Electrical characteristics STM32F042x4 STM32F042x6 High-speed internal 14 MHz (HSI14) RC oscillator (dedicated to ADC) Table 39. HSI14 oscillator characteristics(1) Symbol fHSI14 TRIM Parameter Conditions Min Typ - - 14 Frequency HSI14 user-trimming step DuCy(HSI14) Duty cycle - - - (2) 45 Accuracy of the HSI14 oscillator (factory calibrated) TA = –10 to 85 °C TA = 25 °C tsu(HSI14) IDDA(HSI14) - MHz (2) - % 1 55 (2) % (3) % (3) - 5.1 –3.2(3) - 3.1(3) % –2.5 - 2.3 (3) % –1 (3) TA = 0 to 70 °C Unit - TA = –40 to 105 °C –4.2 ACCHSI14 Max HSI14 oscillator startup time - 1(2) HSI14 oscillator power consumption - - - 1 % - 2(2) µs 100 150(2) µA 1. VDDA = 3.3 V, TA = –40 to 105 °C unless otherwise specified. 2. Guaranteed by design, not tested in production. 3. Data based on characterization results, not tested in production. Figure 20. HSI14 oscillator accuracy characterization results  0$; 0,1     7>ƒ&@ $                   069 66/117 DocID025832 Rev 5 STM32F042x4 STM32F042x6 Electrical characteristics High-speed internal 48 MHz (HSI48) RC oscillator Table 40. HSI48 oscillator characteristics(1) Symbol fHSI48 TRIM Parameter Conditions Min Typ Max Unit - - 48 - MHz Frequency HSI48 user-trimming step (2) - DuCy(HSI48) Duty cycle 0.09 - 45 TA = –40 to 105 °C ACCHSI48 TA = –10 to 85 °C Accuracy of the HSI48 oscillator (factory calibrated) T = 0 to 70 °C A IDDA(HSI48) 0.14 - % (2) % (3) 0.2 55 (3) - 4.7 % -4.1(3) - 3.7(3) % - (3) % -4.9 (3) -3.8 TA = 25 °C tsu(HSI48) (2) (2) -2.8 3.4 - 2.9 % µs µA HSI48 oscillator startup time - - - 6(2) HSI48 oscillator power consumption - - 312 350(2) 1. VDDA = 3.3 V, TA = –40 to 105 °C unless otherwise specified. 2. Guaranteed by design, not tested in production. 3. Data based on characterization results, not tested in production. Figure 21. HSI48 oscillator accuracy characterization results  0$; 0,1               7>ƒ&@ $         069 DocID025832 Rev 5 67/117 89 Electrical characteristics STM32F042x4 STM32F042x6 Low-speed internal (LSI) RC oscillator Table 41. LSI oscillator characteristics(1) Symbol Parameter fLSI tsu(LSI) Min Typ Max Unit 30 40 50 kHz LSI oscillator startup time - - 85 µs LSI oscillator power consumption - 0.75 1.2 µA Frequency (2) IDDA(LSI)(2) 1. VDDA = 3.3 V, TA = –40 to 105 °C unless otherwise specified. 2. Guaranteed by design, not tested in production. 6.3.9 PLL characteristics The parameters given in Table 42 are derived from tests performed under ambient temperature and supply voltage conditions summarized in Table 21: General operating conditions. Table 42. PLL characteristics Value Symbol fPLL_IN fPLL_OUT tLOCK JitterPLL Parameter Unit Min Typ Max 1(2) 8.0 24(2) MHz PLL input clock duty cycle (2) 40 - 60(2) % PLL multiplier output clock 16(2) - 48 MHz PLL lock time - - 200(2) µs Cycle-to-cycle jitter - - 300(2) ps PLL input clock(1) 1. Take care to use the appropriate multiplier factors to obtain PLL input clock values compatible with the range defined by fPLL_OUT. 2. Guaranteed by design, not tested in production. 6.3.10 Memory characteristics Flash memory The characteristics are given at TA = –40 to 105 °C unless otherwise specified. Table 43. Flash memory characteristics Min Typ Max(1) Unit 16-bit programming time TA = - 40 to +105 °C 40 53.5 60 µs Page (1 KB) erase time TA = - 40 to +105 °C 20 - 40 ms tME Mass erase time TA = - 40 to +105 °C 20 - 40 ms IDD Supply current Write mode - - 10 mA Erase mode - - 12 mA Symbol tprog tERASE Parameter Conditions 1. Guaranteed by design, not tested in production. 68/117 DocID025832 Rev 5 STM32F042x4 STM32F042x6 Electrical characteristics Table 44. Flash memory endurance and data retention Symbol NEND Parameter Endurance Conditions TA = –40 to +105 °C 1 tRET Data retention kcycle(2) Min(1) Unit 10 kcycle at TA = 85 °C 30 at TA = 105 °C 10 10 kcycle(2) at TA = 55 °C 20 1 kcycle (2) Year 1. Data based on characterization results, not tested in production. 2. Cycling performed over the whole temperature range. 6.3.11 EMC characteristics Susceptibility tests are performed on a sample basis during device characterization. Functional EMS (electromagnetic susceptibility) While a simple application is executed on the device (toggling 2 LEDs through I/O ports). the device is stressed by two electromagnetic events until a failure occurs. The failure is indicated by the LEDs: • Electrostatic discharge (ESD) (positive and negative) is applied to all device pins until a functional disturbance occurs. This test is compliant with the IEC 61000-4-2 standard. • FTB: A Burst of Fast Transient voltage (positive and negative) is applied to VDD and VSS through a 100 pF capacitor, until a functional disturbance occurs. This test is compliant with the IEC 61000-4-4 standard. A device reset allows normal operations to be resumed. The test results are given in Table 45. They are based on the EMS levels and classes defined in application note AN1709. Table 45. EMS characteristics Symbol Parameter Conditions Level/ Class VFESD VDD = 3.3 V, LQFP48, TA = +25 °C, Voltage limits to be applied on any I/O pin fHCLK = 48 MHz, to induce a functional disturbance conforming to IEC 61000-4-2 3B VEFTB Fast transient voltage burst limits to be applied through 100 pF on VDD and VSS pins to induce a functional disturbance VDD = 3.3 V, LQFP48, TA = +25°C, fHCLK = 48 MHz, conforming to IEC 61000-4-4 4B Designing hardened software to avoid noise problems EMC characterization and optimization are performed at component level with a typical application environment and simplified MCU software. It should be noted that good EMC performance is highly dependent on the user application and the software in particular. Therefore it is recommended that the user applies EMC software optimization and prequalification tests in relation with the EMC level requested for his application. DocID025832 Rev 5 69/117 89 Electrical characteristics STM32F042x4 STM32F042x6 Software recommendations The software flowchart must include the management of runaway conditions such as: • Corrupted program counter • Unexpected reset • Critical Data corruption (for example control registers) Prequalification trials Most of the common failures (unexpected reset and program counter corruption) can be reproduced by manually forcing a low state on the NRST pin or the Oscillator pins for 1 second. To complete these trials, ESD stress can be applied directly on the device, over the range of specification values. When unexpected behavior is detected, the software can be hardened to prevent unrecoverable errors occurring (see application note AN1015). Electromagnetic Interference (EMI) The electromagnetic field emitted by the device are monitored while a simple application is executed (toggling 2 LEDs through the I/O ports). This emission test is compliant with IEC 61967-2 standard which specifies the test board and the pin loading. Table 46. EMI characteristics Symbol Parameter SEMI 6.3.12 Conditions Monitored frequency band 0.1 to 30 MHz VDD = 3.6 V, TA = 25 °C, 30 to 130 MHz LQFP48 package Peak level compliant with 130 MHz to 1 GHz IEC 61967-2 EMI Level Max vs. [fHSE/fHCLK] Unit 8/48 MHz -9 9 dBµV 17 3 - Electrical sensitivity characteristics Based on three different tests (ESD, LU) using specific measurement methods, the device is stressed in order to determine its performance in terms of electrical sensitivity. Electrostatic discharge (ESD) Electrostatic discharges (a positive then a negative pulse separated by 1 second) are applied to the pins of each sample according to each pin combination. The sample size depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test conforms to the JESD22-A114/C101 standard. 70/117 DocID025832 Rev 5 STM32F042x4 STM32F042x6 Electrical characteristics Table 47. ESD absolute maximum ratings Symbol Ratings Conditions Packages Class Maximum value(1) Unit VESD(HBM) Electrostatic discharge voltage TA = +25 °C, conforming (human body model) to JESD22-A114 All 2 2000 V VESD(CDM) Electrostatic discharge voltage TA = +25 °C, conforming (charge device model) to ANSI/ESD STM5.3.1 All C4 500 V 1. Data based on characterization results, not tested in production. Static latch-up Two complementary static tests are required on six parts to assess the latch-up performance: • A supply overvoltage is applied to each power supply pin. • A current injection is applied to each input, output and configurable I/O pin. These tests are compliant with EIA/JESD 78A IC latch-up standard. Table 48. Electrical sensitivities Symbol LU 6.3.13 Parameter Static latch-up class Conditions TA = +105 °C conforming to JESD78A Class II level A I/O current injection characteristics As a general rule, current injection to the I/O pins, due to external voltage below VSS or above VDDIOx (for standard, 3.3 V-capable I/O pins) should be avoided during normal product operation. However, in order to give an indication of the robustness of the microcontroller in cases when abnormal injection accidentally happens, susceptibility tests are performed on a sample basis during device characterization. Functional susceptibility to I/O current injection While a simple application is executed on the device, the device is stressed by injecting current into the I/O pins programmed in floating input mode. While current is injected into the I/O pin, one at a time, the device is checked for functional failures. The failure is indicated by an out of range parameter: ADC error above a certain limit (higher than 5 LSB TUE), out of conventional limits of induced leakage current on adjacent pins (out of the -5 µA/+0 µA range) or other functional failure (for example reset occurrence or oscillator frequency deviation). The characterization results are given in Table 49. Negative induced leakage current is caused by negative injection and positive induced leakage current is caused by positive injection. DocID025832 Rev 5 71/117 89 Electrical characteristics STM32F042x4 STM32F042x6 Table 49. I/O current injection susceptibility Functional susceptibility Symbol Description Unit Negative Positive injection injection IINJ 6.3.14 Injected current on PA12 pin -0 +5 Injected current on PA9, PB3, PB13, PF11 pins with induced leakage current on adjacent pins less than 50 µA -5 NA Injected current on PB0, PB1 and all other FT and FTf pins -5 NA Injected current on all other TC, TTa and RST pins -5 +5 mA I/O port characteristics General input/output characteristics Unless otherwise specified, the parameters given in Table 50 are derived from tests performed under the conditions summarized in Table 21: General operating conditions. All I/Os are designed as CMOS- and TTL-compliant. Table 50. I/O static characteristics Symbol VIL Parameter Low level input voltage Conditions Min Typ Max TC and TTa I/O - - 0.3 VDDIOx+0.07(1) FT and FTf I/O - - 0.475 VDDIOx–0.2(1) All I/Os - - 0.3 VDDIOx +0.398(1) - - +0.2(1) - - 0.7 VDDIOx - - - 200(1) - FT and FTf I/O - (1) 100 - TC, FT and FTf I/O TTa in digital mode VSS ≤ VIN ≤ VDDIOx - - ± 0.1 TTa in digital mode VDDIOx ≤ VIN ≤ VDDA - - 1 TTa in analog mode VSS ≤ VIN ≤ VDDA - - ± 0.2 FT and FTf I/O VDDIOx ≤ VIN ≤ 5 V - - 10 25 40 55 TC and TTa I/O VIH High level input voltage FT and FTf I/O 0.5 VDDIOx All I/Os Vhys Ilkg RPU 72/117 Schmitt trigger hysteresis Input leakage current(2) Weak pull-up equivalent resistor (3) TC and TTa I/O VIN = VSS 0.445 VDDIOx DocID025832 Rev 5 Unit V V mV µA kΩ STM32F042x4 STM32F042x6 Electrical characteristics Table 50. I/O static characteristics (continued) Symbol Parameter RPD Weak pull-down equivalent resistor(3) CIO I/O pin capacitance Conditions VIN = - VDDIOx - Min Typ Max Unit 25 40 55 kΩ - 5 - pF 1. Data based on design simulation only. Not tested in production. 2. The leakage could be higher than the maximum value, if negative current is injected on adjacent pins. Refer to Table 49: I/O current injection susceptibility. 3. Pull-up and pull-down resistors are designed with a true resistance in series with a switchable PMOS/NMOS. This PMOS/NMOS contribution to the series resistance is minimal (~10% order). All I/Os are CMOS- and TTL-compliant (no software configuration required). Their characteristics cover more than the strict CMOS-technology or TTL parameters. The coverage of these requirements is shown in Figure 22 for standard I/Os, and in Figure 23 for 5 V-tolerant I/Os. The following curves are design simulation results, not tested in production. DocID025832 Rev 5 73/117 89 Electrical characteristics STM32F042x4 STM32F042x6 Figure 22. TC and TTa I/O input characteristics   7(67('5$1*(  77/VWDQGDUGUHTXLUHPHQW HQW LUHP HTX DUGU QG 6VWD 9,1 9 9    &02   [ '',2 9 ,+PLQ  81'(),1(',13875$1*( ',2[ 9' 9,+PLQ    9'',2[ 9,/PD[  XLUHPHQW WDQGDUGUHT V 6 2 0 &   9'',2[ 9,/PD[  77/VWDQGDUGUHTXLUHPHQW 7(67('5$1*(             9'',2[ 9 06Y9 Figure 23. Five volt tolerant (FT and FTf) I/O input characteristics   7(67('5$1*(  77/VWDQGDUGUHTXLUHPHQW HQW LUHP  9   9 ,+PLQ '',2 9 9,+PLQ   [ 81'(),1(',13875$1*(   '',2[ 9 9,/PD[  QG 6VWD &02 9,1 9 HTX DUGU   '',2[ 77/VWDQGDUGUHTXLUHPHQW XLUHPHQW QGDUGUHT WD  &026V [ 9'',2 9,/PD[  7(67('5$1*(             9'',2[ 9 06Y9 74/117 DocID025832 Rev 5 STM32F042x4 STM32F042x6 Electrical characteristics Output driving current The GPIOs (general purpose input/outputs) can sink or source up to +/-8 mA, and sink or source up to +/- 20 mA (with a relaxed VOL/VOH). In the user application, the number of I/O pins which can drive current must be limited to respect the absolute maximum rating specified in Section 6.2: • The sum of the currents sourced by all the I/Os on VDDIOx, plus the maximum consumption of the MCU sourced on VDD, cannot exceed the absolute maximum rating ΣIVDD (see Table 18: Voltage characteristics). • The sum of the currents sunk by all the I/Os on VSS, plus the maximum consumption of the MCU sunk on VSS, cannot exceed the absolute maximum rating ΣIVSS (see Table 18: Voltage characteristics). Output voltage levels Unless otherwise specified, the parameters given in the table below are derived from tests performed under the ambient temperature and supply voltage conditions summarized in Table 21: General operating conditions. All I/Os are CMOS- and TTL-compliant (FT, TTa or TC unless otherwise specified). Table 51. Output voltage characteristics(1) Symbol Parameter VOL Output low level voltage for an I/O pin VOH Output high level voltage for an I/O pin VOL Output low level voltage for an I/O pin VOH Output high level voltage for an I/O pin VOL(3) Output low level voltage for an I/O pin VOH(3) Output high level voltage for an I/O pin VOL(3) Output low level voltage for an I/O pin VOH(3) Output high level voltage for an I/O pin VOL(4) Output low level voltage for an I/O pin VOH(4) Output high level voltage for an I/O pin VOLFm+(3) Output low level voltage for an FTf I/O pin in Fm+ mode Conditions Min Max CMOS port(2) |IIO| = 8 mA VDDIOx ≥ 2.7 V - 0.4 VDDIOx–0.4 - - 0.4 2.4 - - 1.3 VDDIOx–1.3 - - 0.4 VDDIOx–0.4 - - 0.4 V VDDIOx–0.4 - V |IIO| = 20 mA VDDIOx ≥ 2.7 V - 0.4 V |IIO| = 10 mA - 0.4 V TTL port(2) |IIO| = 8 mA VDDIOx ≥ 2.7 V |IIO| = 20 mA VDDIOx ≥ 2.7 V |IIO| = 6 mA VDDIOx ≥ 2 V |IIO| = 4 mA Unit V V V V 1. The IIO current sourced or sunk by the device must always respect the absolute maximum rating specified in Table 18: Voltage characteristics, and the sum of the currents sourced or sunk by all the I/Os (I/O ports and control pins) must always respect the absolute maximum ratings ΣIIO. 2. TTL and CMOS outputs are compatible with JEDEC standards JESD36 and JESD52. 3. Data based on characterization results. Not tested in production. 4. Data based on characterization results. Not tested in production. DocID025832 Rev 5 75/117 89 Electrical characteristics STM32F042x4 STM32F042x6 Input/output AC characteristics The definition and values of input/output AC characteristics are given in Figure 24 and Table 52, respectively. Unless otherwise specified, the parameters given are derived from tests performed under the ambient temperature and supply voltage conditions summarized in Table 21: General operating conditions. Table 52. I/O AC characteristics(1)(2) OSPEEDRy [1:0] value(1) Symbol Parameter Conditions Min Max Unit - 2 MHz - 125 - 125 - 1 - 125 - 125 - 10 - 25 - 25 - 4 - 62.5 - 62.5 CL = 30 pF, VDDIOx ≥ 2.7 V - 50 CL = 50 pF, VDDIOx ≥ 2.7 V - 30 CL = 50 pF, 2 V ≤ VDDIOx < 2.7 V - 20 CL = 50 pF, VDDIOx < 2 V - 10 CL = 30 pF, VDDIOx ≥ 2.7 V - 5 CL = 50 pF, VDDIOx ≥ 2.7 V - 8 CL = 50 pF, 2 V ≤ VDDIOx < 2.7 V - 12 CL = 50 pF, VDDIOx < 2 V - 25 CL = 30 pF, VDDIOx ≥ 2.7 V - 5 CL = 50 pF, VDDIOx ≥ 2.7 V - 8 CL = 50 pF, 2 V ≤ VDDIOx < 2.7 V - 12 CL = 50 pF, VDDIOx < 2 V - 25 fmax(IO)out Maximum frequency(3) x0 tf(IO)out Output fall time tr(IO)out Output rise time CL = 50 pF, VDDIOx ≥ 2 V fmax(IO)out Maximum frequency(3) tf(IO)out Output fall time tr(IO)out Output rise time CL = 50 pF, VDDIOx < 2 V fmax(IO)out Maximum frequency(3) 01 tf(IO)out Output fall time tr(IO)out Output rise time CL = 50 pF, VDDIOx ≥ 2 V fmax(IO)out Maximum frequency(3) tf(IO)out Output fall time tr(IO)out Output rise time CL = 50 pF, VDDIOx < 2 V fmax(IO)out Maximum frequency(3) 11 tf(IO)out tr(IO)out 76/117 Output fall time Output rise time DocID025832 Rev 5 ns MHz ns MHz ns MHz ns MHz ns STM32F042x4 STM32F042x6 Electrical characteristics Table 52. I/O AC characteristics(1)(2) (continued) OSPEEDRy [1:0] value(1) Symbol Parameter Conditions fmax(IO)out Maximum frequency(3) Fm+ configuration (4) - tf(IO)out Output fall time tr(IO)out Output rise time CL = 50 pF, VDDIOx ≥ 2 V fmax(IO)out Maximum frequency(3) tf(IO)out Output fall time CL = 50 pF, VDDIOx < 2 V tr(IO)out Output rise time tEXTIpw Pulse width of external signals detected by the EXTI controller - Min Max Unit - 2 MHz - 12 - 34 - 0.5 - 16 - 44 10 - ns MHz ns ns 1. The I/O speed is configured using the OSPEEDRx[1:0] bits. Refer to the STM32F0xxxx RM0091 reference manual for a description of GPIO Port configuration register. 2. Guaranteed by design, not tested in production. 3. The maximum frequency is defined in Figure 24. 4. When Fm+ configuration is set, the I/O speed control is bypassed. Refer to the STM32F0xxxx reference manual RM0091 for a detailed description of Fm+ I/O configuration. Figure 24. I/O AC characteristics definition       W I ,2 RXW W U ,2 RXW 7  7DQGLIWKHGXW\F\FOHLV  0D[LPXPIUHTXHQF\LVDFKLHYHGLI WW ” U I  ZKHQORDGHGE\& VHHWKHWDEOH,2$&FKDUDFWHULVWLFVGHILQLWLRQ 069 6.3.15 NRST pin characteristics The NRST pin input driver uses the CMOS technology. It is connected to a permanent pullup resistor, RPU. Unless otherwise specified, the parameters given in the table below are derived from tests performed under the ambient temperature and supply voltage conditions summarized in Table 21: General operating conditions. Table 53. NRST pin characteristics Symbol Parameter Conditions Min Typ Max VIL(NRST) NRST input low level voltage - - - 0.3 VDD+0.07(1) VIH(NRST) NRST input high level voltage - 0.445 VDD+0.398(1) - - DocID025832 Rev 5 Unit V 77/117 89 Electrical characteristics STM32F042x4 STM32F042x6 Table 53. NRST pin characteristics (continued) Symbol Parameter Conditions Min Typ Max Unit Vhys(NRST) NRST Schmitt trigger voltage hysteresis - - 200 - mV RPU Weak pull-up equivalent resistor(2) VIN = VSS 25 40 55 kΩ VF(NRST) NRST input filtered pulse - - - 100(1) ns 2.7 < VDD < 3.6 300(3) - - 2.0 < VDD < 3.6 (3) - - VNF(NRST) NRST input not filtered pulse 500 ns 1. Data based on design simulation only. Not tested in production. 2. The pull-up is designed with a true resistance in series with a switchable PMOS. This PMOS contribution to the series resistance is minimal (~10% order). 3. Data based on design simulation only. Not tested in production. Figure 25. Recommended NRST pin protection ([WHUQDO UHVHWFLUFXLW  9'' 538 1567  ,QWHUQDOUHVHW )LOWHU —) 069 1. The external capacitor protects the device against parasitic resets. 2. The user must ensure that the level on the NRST pin can go below the VIL(NRST) max level specified in Table 53: NRST pin characteristics. Otherwise the reset will not be taken into account by the device. 6.3.16 12-bit ADC characteristics Unless otherwise specified, the parameters given in Table 54 are derived from tests performed under the conditions summarized in Table 21: General operating conditions. Note: It is recommended to perform a calibration after each power-up. Table 54. ADC characteristics Symbol Parameter Conditions Min Typ Max Unit VDDA Analog supply voltage for ADC ON - 2.4 - 3.6 V VDDA = 3.3 V - 0.9 - mA - 0.6 - 14 MHz 12-bit resolution 0.043 - 1 MHz IDDA (ADC) Current consumption of the ADC(1) fADC ADC clock frequency fS(2) Sampling rate 78/117 DocID025832 Rev 5 STM32F042x4 STM32F042x6 Electrical characteristics Table 54. ADC characteristics (continued) Symbol fTRIG(2) Parameter Conditions Min Typ Max Unit External trigger frequency fADC = 14 MHz, 12-bit resolution - - 823 kHz 12-bit resolution - - 17 1/fADC VAIN Conversion voltage range - 0 - VDDA V RAIN(2) External input impedance See Equation 1 and Table 55 for details - - 50 kΩ RADC(2) Sampling switch resistance - - - 1 kΩ CADC(2) Internal sample and hold capacitor - - - 8 pF tCAL(2)(3) Calibration time WLATENCY(2)(4) tlatr(2) ADC_DR register ready latency fADC = 14 MHz 5.9 µs - 83 1/fADC ADC clock = HSI14 1.5 ADC cycles + 2 fPCLK cycles - 1.5 ADC cycles + 3 fPCLK cycles - ADC clock = PCLK/2 - 4.5 - fPCLK cycle ADC clock = PCLK/4 - 8.5 - fPCLK cycle fADC = fPCLK/2 = 14 MHz 0.196 µs fADC = fPCLK/2 5.5 1/fPCLK 0.219 µs 10.5 1/fPCLK Trigger conversion latency fADC = fPCLK/4 = 12 MHz fADC = fPCLK/4 JitterADC tS(2) fADC = fHSI14 = 14 MHz 0.179 - 0.250 µs fADC = fHSI14 - 1 - 1/fHSI14 fADC = 14 MHz 0.107 - 17.1 µs - 1.5 - 239.5 1/fADC ADC jitter on trigger conversion Sampling time tSTAB(2) Stabilization time tCONV(2) Total conversion time (including sampling time) fADC = 14 MHz, 12-bit resolution 12-bit resolution 14 1 - 1/fADC 18 14 to 252 (tS for sampling +12.5 for successive approximation) µs 1/fADC 1. During conversion of the sampled value (12.5 x ADC clock period), an additional consumption of 100 µA on IDDA and 60 µA on IDD should be taken into account. 2. Guaranteed by design, not tested in production. 3. Specified value includes only ADC timing. It does not include the latency of the register access. 4. This parameter specify latency for transfer of the conversion result to the ADC_DR register. EOC flag is set at this time. DocID025832 Rev 5 79/117 89 Electrical characteristics STM32F042x4 STM32F042x6 Equation 1: RAIN max formula TS - – R ADC R AIN < --------------------------------------------------------------N+2 f ADC × C ADC × ln ( 2 ) The formula above (Equation 1) is used to determine the maximum external impedance allowed for an error below 1/4 of LSB. Here N = 12 (from 12-bit resolution). Table 55. RAIN max for fADC = 14 MHz Ts (cycles) tS (µs) RAIN max (kΩ)(1) 1.5 0.11 0.4 7.5 0.54 5.9 13.5 0.96 11.4 28.5 2.04 25.2 41.5 2.96 37.2 55.5 3.96 50 71.5 5.11 NA 239.5 17.1 NA 1. Guaranteed by design, not tested in production. Table 56. ADC accuracy(1)(2)(3) Symbol Parameter Test conditions Typ Max(4) ±1.3 ±2 ±1 ±1.5 ±0.5 ±1.5 ±0.7 ±1 ET Total unadjusted error EO Offset error EG Gain error ED Differential linearity error EL Integral linearity error ±0.8 ±1.5 ET Total unadjusted error ±3.3 ±4 EO Offset error ±1.9 ±2.8 EG Gain error ±2.8 ±3 ED Differential linearity error ±0.7 ±1.3 EL Integral linearity error ±1.2 ±1.7 ET Total unadjusted error ±3.3 ±4 EO Offset error ±1.9 ±2.8 EG Gain error ±2.8 ±3 ED Differential linearity error ±0.7 ±1.3 EL Integral linearity error ±1.2 ±1.7 fPCLK = 48 MHz, fADC = 14 MHz, RAIN < 10 kΩ VDDA = 3 V to 3.6 V TA = 25 °C fPCLK = 48 MHz, fADC = 14 MHz, RAIN < 10 kΩ VDDA = 2.7 V to 3.6 V TA = - 40 to 105 °C fPCLK = 48 MHz, fADC = 14 MHz, RAIN < 10 kΩ VDDA = 2.4 V to 3.6 V TA = 25 °C 1. ADC DC accuracy values are measured after internal calibration. 80/117 DocID025832 Rev 5 Unit LSB LSB LSB STM32F042x4 STM32F042x6 Electrical characteristics 2. ADC Accuracy vs. Negative Injection Current: Injecting negative current on any of the standard (non-robust) analog input pins should be avoided as this significantly reduces the accuracy of the conversion being performed on another analog input. It is recommended to add a Schottky diode (pin to ground) to standard analog pins which may potentially inject negative current. Any positive injection current within the limits specified for IINJ(PIN) and ΣIINJ(PIN) in Section 6.3.14 does not affect the ADC accuracy. 3. Better performance may be achieved in restricted VDDA, frequency and temperature ranges. 4. Data based on characterization results, not tested in production. Figure 26. ADC accuracy characteristics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igure 27. Typical connection diagram using the ADC 9''$ 6DPSOHDQGKROG$'& FRQYHUWHU 97 5$,1  9$,1 5$'& $,1[ 97 &SDUDVLWLF  ,/ “ —$ ELW FRQYHUWHU &$'& 069 1. Refer to Table 54: ADC characteristics for the values of RAIN, RADC and CADC. 2. Cparasitic represents the capacitance of the PCB (dependent on soldering and PCB layout quality) plus the pad capacitance (roughly 7 pF). A high Cparasitic value will downgrade conversion accuracy. To remedy this, fADC should be reduced. General PCB design guidelines Power supply decoupling should be performed as shown in Figure 13: Power supply scheme. The 10 nF capacitor should be ceramic (good quality) and it should be placed as close as possible to the chip. DocID025832 Rev 5 81/117 89 Electrical characteristics 6.3.17 STM32F042x4 STM32F042x6 Temperature sensor characteristics Table 57. TS characteristics Symbol Parameter TL(1) Avg_Slope Min Typ Max Unit - ±1 ±2 °C 4.0 4.3 4.6 mV/°C 1.34 1.43 1.52 V VSENSE linearity with temperature (1) V30 Average slope (2) Voltage at 30 °C (± 5 °C) tSTART(1) ADC_IN16 buffer startup time - - 10 µs tS_temp(1) ADC sampling time when reading the temperature 4 - - µs 1. Guaranteed by design, not tested in production. 2. Measured at VDDA = 3.3 V ± 10 mV. The V30 ADC conversion result is stored in the TS_CAL1 byte. Refer to Table 3: Temperature sensor calibration values. 6.3.18 VBAT monitoring characteristics Table 58. VBAT monitoring characteristics Symbol Parameter Min Typ Max Unit R Resistor bridge for VBAT - 2 x 50 - kΩ Q Ratio on VBAT measurement - 2 - - Error on Q –1 - +1 % ADC sampling time when reading the VBAT 4 - - µs Er(1) tS_vbat(1) 1. Guaranteed by design, not tested in production. 6.3.19 Timer characteristics The parameters given in the following tables are guaranteed by design. Refer to Section 6.3.14: I/O port characteristics for details on the input/output alternate function characteristics (output compare, input capture, external clock, PWM output). Table 59. TIMx characteristics Symbol Parameter tres(TIM) Timer resolution time fEXT Timer external clock frequency on CH1 to CH4 16-bit timer maximum period tMAX_COUNT 32-bit counter maximum period 82/117 Conditions Min Typ Max Unit - - 1 - tTIMxCLK fTIMxCLK = 48 MHz - 20.8 - ns - - fTIMxCLK/2 - MHz fTIMxCLK = 48 MHz - 24 - MHz - - 216 - tTIMxCLK fTIMxCLK = 48 MHz - 1365 - µs - - 232 - tTIMxCLK fTIMxCLK = 48 MHz - 89.48 - s DocID025832 Rev 5 STM32F042x4 STM32F042x6 Electrical characteristics Table 60. IWDG min/max timeout period at 40 kHz (LSI)(1) Prescaler divider PR[2:0] bits Min timeout RL[11:0]= 0x000 Max timeout RL[11:0]= 0xFFF /4 0 0.1 409.6 /8 1 0.2 819.2 /16 2 0.4 1638.4 /32 3 0.8 3276.8 /64 4 1.6 6553.6 /128 5 3.2 13107.2 /256 6 or 7 6.4 26214.4 Unit ms 1. These timings are given for a 40 kHz clock but the microcontroller internal RC frequency can vary from 30 to 60 kHz. Moreover, given an exact RC oscillator frequency, the exact timings still depend on the phasing of the APB interface clock versus the LSI clock so that there is always a full RC period of uncertainty. Table 61. WWDG min/max timeout value at 48 MHz (PCLK) 6.3.20 Prescaler WDGTB Min timeout value Max timeout value 1 0 0.0853 5.4613 2 1 0.1706 10.9226 4 2 0.3413 21.8453 8 3 0.6826 43.6906 Unit ms Communication interfaces I2C interface characteristics The I2C interface meets the timings requirements of the I2C-bus specification and user manual rev. 03 for: • Standard-mode (Sm): with a bit rate up to 100 kbit/s • Fast-mode (Fm): with a bit rate up to 400 kbit/s • Fast-mode Plus (Fm+): with a bit rate up to 1 Mbit/s. The I2C timings requirements are guaranteed by design when the I2Cx peripheral is properly configured (refer to Reference manual). The SDA and SCL I/O requirements are met with the following restrictions: the SDA and SCL I/O pins are not “true” open-drain. When configured as open-drain, the PMOS connected between the I/O pin and VDDIOx is disabled, but is still present. Only FTf I/O pins support Fm+ low level output current maximum requirement. Refer to Section 6.3.14: I/O port characteristics for the I2C I/Os characteristics. All I2C SDA and SCL I/Os embed an analog filter. Refer to the table below for the analog filter characteristics: DocID025832 Rev 5 83/117 89 Electrical characteristics STM32F042x4 STM32F042x6 Table 62. I2C analog filter characteristics(1) Symbol tAF Parameter Maximum width of spikes that are suppressed by the analog filter Min Max Unit 50(2) 260(3) ns 1. Guaranteed by design, not tested in production. 2. Spikes with widths below tAF(min) are filtered. 3. Spikes with widths above tAF(max) are not filtered SPI/I2S characteristics Unless otherwise specified, the parameters given in Table 63 for SPI or in Table 64 for I2S are derived from tests performed under the ambient temperature, fPCLKx frequency and supply voltage conditions summarized in Table 21: General operating conditions. Refer to Section 6.3.14: I/O port characteristics for more details on the input/output alternate function characteristics (NSS, SCK, MOSI, MISO for SPI and WS, CK, SD for I2S). Table 63. SPI characteristics(1) Symbol fSCK 1/tc(SCK) Parameter SPI clock frequency Conditions Min Max Master mode - 18 Slave mode - 18 - 6 tr(SCK) tf(SCK) SPI clock rise and fall time Capacitive load: C = 15 pF tsu(NSS) NSS setup time Slave mode 4Tpclk - th(NSS) NSS hold time Slave mode 2Tpclk + 10 - SCK high and low time Master mode, fPCLK = 36 MHz, presc = 4 Tpclk/2 -2 Tpclk/2 + 1 Master mode 4 - Slave mode 5 - Master mode 4 - Slave mode 5 - Data output access time Slave mode, fPCLK = 20 MHz 0 3Tpclk Data output disable time Slave mode 0 18 tv(SO) Data output valid time Slave mode (after enable edge) - 22.5 tv(MO) Data output valid time Master mode (after enable edge) - 6 Slave mode (after enable edge) 11.5 - Master mode (after enable edge) 2 - Slave mode 25 75 tw(SCKH) tw(SCKL) tsu(MI) tsu(SI) th(MI) th(SI) ta(SO)(2) tdis(SO) (3) th(SO) th(MO) DuCy(SCK) Data input setup time Data input hold time Data output hold time SPI slave input clock duty cycle Unit MHz ns ns % 1. Data based on characterization results, not tested in production. 2. Min time is for the minimum time to drive the output and the max time is for the maximum time to validate the data. 3. Min time is for the minimum time to invalidate the output and the max time is for the maximum time to put the data in Hi-Z 84/117 DocID025832 Rev 5 STM32F042x4 STM32F042x6 Electrical characteristics Figure 28. SPI timing diagram - slave mode and CPHA = 0 166LQSXW WF 6&. 6&.LQSXW WVX 166 WK 166 WZ 6&.+ WU 6&. &3+$  &32/  &3+$  &32/  WD 62 WZ 6&./ 0,62RXWSXW WY 62 WK 62 )LUVWELW287 WI 6&. 1H[WELWV287 WGLV 62 /DVWELW287 WK 6, WVX 6, 026,LQSXW )LUVWELW,1 1H[WELWV,1 /DVWELW,1 06Y9 Figure 29. SPI timing diagram - slave mode and CPHA = 1 166LQSXW 6&.LQSXW WF 6&. WVX 166 WZ 6&.+ WD 62 WZ 6&./ WI 6&. WK 166 &3+$  &32/  &3+$  &32/  0,62RXWSXW WY 62 )LUVWELW287 WVX 6, 026,LQSXW WK 62 1H[WELWV287 WU 6&. WGLV 62 /DVWELW287 WK 6, )LUVWELW,1 1H[WELWV,1 /DVWELW,1 06Y9 1. Measurement points are done at CMOS levels: 0.3 VDD and 0.7 VDD. DocID025832 Rev 5 85/117 89 Electrical characteristics STM32F042x4 STM32F042x6 Figure 30. SPI timing diagram - master mode +LJK 166LQSXW 6&.2XWSXW &3+$  &32/  6&.2XWSXW WF 6&. &3+$  &32/  &3+$  &32/  &3+$  &32/  WZ 6&.+ WZ 6&./ WVX 0, 0,62 ,13 87 WU 6&. WI 6&. %,7,1 06%,1 /6%,1 WK 0, 026, 287387 % , 7287 06%287 WY 02 /6%287 WK 02 DLF 1. Measurement points are done at CMOS levels: 0.3 VDD and 0.7 VDD. Table 64. I2S characteristics(1) Symbol fCK 1/tc(CK) Parameter I2S clock frequency Conditions Master mode (data: 16 bits, Audio frequency = 48 kHz) Slave mode tr(CK) I2S clock rise time tf(CK) I2S clock fall time Capacitive load CL = 15 pF Min Max 1.597 1.601 0 6.5 - 10 - 12 306 - 312 - tw(CKH) I2S tw(CKL) 2 I S clock low time Master fPCLK= 16 MHz, audio frequency = 48 kHz tv(WS) WS valid time Master mode 2 - th(WS) WS hold time Master mode 2 - tsu(WS) WS setup time Slave mode 7 - th(WS) WS hold time Slave mode 0 - Slave mode 25 75 DuCy(SCK) 86/117 I2S clock high time slave input clock duty cycle DocID025832 Rev 5 Unit MHz ns % STM32F042x4 STM32F042x6 Electrical characteristics Table 64. I2S characteristics(1) (continued) Symbol tsu(SD_MR) tsu(SD_SR) th(SD_MR) th(SD_SR) Parameter Conditions Data input setup time (2) (2) tv(SD_MT)(2) tv(SD_ST)(2) th(SD_MT) th(SD_ST) Data input hold time Data output valid time Data output hold time Min Max Master receiver 6 - Slave receiver 2 - Master receiver 4 - Slave receiver 0.5 - Master transmitter - 4 Slave transmitter - 20 Master transmitter 0 - Slave transmitter 13 - Unit ns 1. Data based on design simulation and/or characterization results, not tested in production. 2. Depends on fPCLK. For example, if fPCLK = 8 MHz, then TPCLK = 1/fPLCLK = 125 ns. Figure 31. I2S slave timing diagram (Philips protocol) &.,QSXW WF &. &32/  &32/  WZ &.+ WK :6 WZ &./ :6LQSXW WY 6'B67 WVX :6 6'WUDQVPLW /6%WUDQVPLW  06%WUDQVPLW WVX 6'B65 6'UHFHLYH /6%UHFHLYH  WK 6'B67 %LWQWUDQVPLW WK 6'B65 06%UHFHLYH %LWQUHFHLYH /6%UHFHLYH 06Y9 1. Measurement points are done at CMOS levels: 0.3 × VDDIOx and 0.7 × VDDIOx. 2. LSB transmit/receive of the previously transmitted byte. No LSB transmit/receive is sent before the first byte. DocID025832 Rev 5 87/117 89 Electrical characteristics STM32F042x4 STM32F042x6 Figure 32. I2S master timing diagram (Philips protocol)   WI &. WU &. &.RXWSXW WF &. &32/  WZ &.+ &32/  WY :6 WK :6 WZ &./ :6RXWSXW WY 6'B07 6'WUDQVPLW /6%WUDQVPLW  06%WUDQVPLW /6%UHFHLYH  /6%WUDQVPLW WK 6'B05 WVX 6'B05 6'UHFHLYH %LWQWUDQVPLW WK 6'B07 06%UHFHLYH %LWQUHFHLYH /6%UHFHLYH 06Y9 1. Data based on characterization results, not tested in production. 2. LSB transmit/receive of the previously transmitted byte. No LSB transmit/receive is sent before the first byte. 88/117 DocID025832 Rev 5 STM32F042x4 STM32F042x6 Electrical characteristics USB characteristics The STM32F042x4/x6 USB interface is fully compliant with the USB specification version 2.0 and is USB-IF certified (for Full-speed device operation). Table 65. USB electrical characteristics Symbol Conditions Min. Typ Max. Unit USB transceiver operating voltage - 3.0(1) - 3.6 V tSTARTUP(2) USB transceiver startup time - - - 1.0 µs RPUI Embedded USB_DP pull-up value during idle - 1.1 1.26 1.5 RPUR Embedded USB_DP pull-up value during reception - ZDRV(2) Output driver impedance(3) VDDIO2 Parameter kΩ Driving high and low 2.0 2.26 2.6 28 40 44 Ω 1. The STM32F042x4/x6 USB functionality is ensured down to 2.7 V but not the full USB electrical characteristics which are degraded in the 2.7-to-3.0 V voltage range. 2. Guaranteed by design, not tested in production. 3. No external termination series resistors are required on USB_DP (D+) and USB_DM (D-); the matching impedance is already included in the embedded driver. CAN (controller area network) interface Refer to Section 6.3.14: I/O port characteristics for more details on the input/output alternate function characteristics (CAN_TX and CAN_RX). DocID025832 Rev 5 89/117 89 Package information 7 STM32F042x4 STM32F042x6 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 7.1 LQFP48 package information LQFP48 is a 48-pin, 7 x 7 mm low-profile quad flat package. Figure 33. LQFP48 package outline F $ $ $ 6($7,1* 3/$1( & PP *$8*(3/$1( FFF & . $ ' ' / / '      3,1 ,'(17,),&$7,21 (    H 1. Drawing is not to scale. 90/117 ( ( E DocID025832 Rev 5 %B0(B9 STM32F042x4 STM32F042x6 Package information Table 66. LQFP48 package mechanical data inches(1) millimeters Symbol Min Typ Max Min Typ Max A - - 1.600 - - 0.0630 A1 0.050 - 0.150 0.0020 - 0.0059 A2 1.350 1.400 1.450 0.0531 0.0551 0.0571 b 0.170 0.220 0.270 0.0067 0.0087 0.0106 c 0.090 - 0.200 0.0035 - 0.0079 D 8.800 9.000 9.200 0.3465 0.3543 0.3622 D1 6.800 7.000 7.200 0.2677 0.2756 0.2835 D3 - 5.500 - - 0.2165 - E 8.800 9.000 9.200 0.3465 0.3543 0.3622 E1 6.800 7.000 7.200 0.2677 0.2756 0.2835 E3 - 5.500 - - 0.2165 - e - 0.500 - - 0.0197 - L 0.450 0.600 0.750 0.0177 0.0236 0.0295 L1 - 1.000 - - 0.0394 - k 0° 3.5° 7° 0° 3.5° 7° ccc - - 0.080 - - 0.0031 1. Values in inches are converted from mm and rounded to 4 decimal digits. Figure 34. Recommended footprint for LQFP48 package                    DLG 1. Dimensions are expressed in millimeters. DocID025832 Rev 5 91/117 113 Package information STM32F042x4 STM32F042x6 Device marking The following figure gives an example of topside marking orientation versus pin 1 identifier location. Other optional marking or inset/upset marks, which identify the parts throughout supply chain operations, are not indicated below. Figure 35. LQFP48 package marking example 3URGXFWLGHQWLILFDWLRQ  670) &7 'DWHFRGH < :: 5HYLVLRQFRGH 5 06Y9 1. Parts marked as "ES", "E" or accompanied by an Engineering Sample notification letter, are not yet qualified and therefore not yet ready to be used in production and any consequences deriving from such usage will not be at ST charge. In no event, ST will be liable for any customer usage of these engineering samples in production. ST Quality has to be contacted prior to any decision to use these Engineering Samples to run qualification activity. 92/117 DocID025832 Rev 5 STM32F042x4 STM32F042x6 7.2 Package information UFQFPN48 package information UFQFPN48 is a 48-lead, 7x7 mm, 0.5 mm pitch, ultra-thin fine-pitch quad flat package. Figure 36. UFQFPN48 package outline 3LQLGHQWLILHU ODVHUPDUNLQJDUHD ' $ ( ( 7 GGG $ 6HDWLQJ SODQH E H 'HWDLO< ' ([SRVHGSDG DUHD < '  /  &[ƒ SLQFRUQHU ( 5W\S 'HWDLO=  =  $%B0(B9 1. Drawing is not to scale. 2. All leads/pads should also be soldered to the PCB to improve the lead/pad solder joint life. 3. There is an exposed die pad on the underside of the UFQFPN package. It is recommended to connect and solder this back-side pad to PCB ground. DocID025832 Rev 5 93/117 113 Package information STM32F042x4 STM32F042x6 Table 67. UFQFPN48 package mechanical data inches(1) millimeters Symbol Min Typ Max Min Typ Max A 0.500 0.550 0.600 0.0197 0.0217 0.0236 A1 0.000 0.020 0.050 0.0000 0.0008 0.0020 D 6.900 7.000 7.100 0.2717 0.2756 0.2795 E 6.900 7.000 7.100 0.2717 0.2756 0.2795 D2 5.500 5.600 5.700 0.2165 0.2205 0.2244 E2 5.500 5.600 5.700 0.2165 0.2205 0.2244 L 0.300 0.400 0.500 0.0118 0.0157 0.0197 T - 0.152 - - 0.0060 - b 0.200 0.250 0.300 0.0079 0.0098 0.0118 e - 0.500 - - 0.0197 - ddd - - 0.080 - - 0.0031 1. Values in inches are converted from mm and rounded to 4 decimal digits. Figure 37. Recommended footprint for UFQFPN48 package                     1. Dimensions are expressed in millimeters. 94/117 DocID025832 Rev 5  $%B)3B9 STM32F042x4 STM32F042x6 Package information Device marking The following figure gives an example of topside marking orientation versus pin 1 identifier location. Other optional marking or inset/upset marks, which identify the parts throughout supply chain operations, are not indicated below. Figure 38. UFQFPN48 package marking example 3URGXFWLGHQWLILFDWLRQ  670) &8 'DWHFRGH < :: 5HYLVLRQFRGH 5 06Y9 1. Parts marked as "ES", "E" or accompanied by an Engineering Sample notification letter, are not yet qualified and therefore not yet ready to be used in production and any consequences deriving from such usage will not be at ST charge. In no event, ST will be liable for any customer usage of these engineering samples in production. ST Quality has to be contacted prior to any decision to use these Engineering Samples to run qualification activity. DocID025832 Rev 5 95/117 113 Package information 7.3 STM32F042x4 STM32F042x6 WLCSP36 package information WLCSP36 is a 36-ball, 2.605 x 2.703 mm, 0.4 mm pitch wafer-level chip-scale package. Figure 39. WLCSP36 package outline H EEE = $EDOOORFDWLRQ ) H * $ 'HWDLO$ H H )  $ $ $  %XPSVLGH 6LGHYLHZ ;  < $ %XPS $ RULHQWDWLRQ UHIHUHQFH HHH =  DDD = $ ‘E EDOOV FFF = ; < GGG = :DIHUEDFNVLGH E = 6HDWLQJSODQH 'HWDLO$ URWDWHGƒ Ϭ>ͺDͺsϮ 1. Drawing is not to scale. Table 68. WLCSP36 package mechanical data inches(1) millimeters Symbol Min Typ Max Min Typ Max A 0.525 0.555 0.585 0.0207 0.0219 0.0230 A1 - 0.175 - - 0.0069 - A2 - 0.380 - - 0.0150 - A3(2) - 0.025 - - 0.0010 - (3) 0.220 0.250 0.280 0.0087 0.0098 0.0110 D 2.570 2.605 2.640 0.1012 0.1026 0.1039 E 2.668 2.703 2.738 0.1050 0.1064 0.1078 e - 0.400 - - 0.0157 - e1 - 2.000 - - 0.0787 - e2 - 2.000 - - 0.0787 - b 96/117 DocID025832 Rev 5 STM32F042x4 STM32F042x6 Package information Table 68. WLCSP36 package mechanical data (continued) inches(1) millimeters Symbol Min Typ Max Min Typ Max F - 0.3025 - - 0.0119 - G - 0.3515 - - 0.0138 - aaa - - 0.100 - - 0.0039 bbb - - 0.100 - - 0.0039 ccc - - 0.100 - - 0.0039 ddd - - 0.050 - - 0.0020 eee - - 0.050 - - 0.0020 1. Values in inches are converted from mm and rounded to 4 decimal digits. 2. Back side coating. 3. Dimension is measured at the maximum bump diameter parallel to primary datum Z. Figure 40. Recommended pad footprint for WLCSP36 package 'SDG 'VP 069 Table 69. WLCSP36 recommended PCB design rules Dimension Recommended values Pitch 0.4 mm Dpad 260 µm max. (circular) 220 µm recommended Dsm 300 µm min. (for 260 µm diameter pad) PCB pad design Non-solder mask defined via underbump allowed DocID025832 Rev 5 97/117 113 Package information STM32F042x4 STM32F042x6 Device marking The following figure gives an example of topside marking orientation versus ball A1 identifier location. Other optional marking or inset/upset marks, which identify the parts throughout supply chain operations, are not indicated below. Figure 41. WLCSP36 package marking example 'RW 3URGXFWLGHQWLILFDWLRQ  )7 5HYLVLRQFRGH 5 'DWHFRGH < :: 06Y9 1. Parts marked as "ES", "E" or accompanied by an Engineering Sample notification letter, are not yet qualified and therefore not yet ready to be used in production and any consequences deriving from such usage will not be at ST charge. In no event, ST will be liable for any customer usage of these engineering samples in production. ST Quality has to be contacted prior to any decision to use these Engineering Samples to run qualification activity. 98/117 DocID025832 Rev 5 STM32F042x4 STM32F042x6 LQFP32 package information LQFP32 is a 32-pin, 7 x 7 mm low-profile quad flat package. Figure 42. LQFP32 package outline F $ $ $ 6($7,1* 3/$1( & PP FFF *$8*(3/$1( & . ' / $ ' / '       3,1 ,'(17,),&$7,21  ( ( ( E 7.4 Package information  H 7@.&@7 1. Drawing is not to scale. DocID025832 Rev 5 99/117 113 Package information STM32F042x4 STM32F042x6 Table 70. LQFP32 package mechanical data inches(1) millimeters Symbol Min Typ Max Min Typ Max A - - 1.600 - - 0.0630 A1 0.050 - 0.150 0.0020 - 0.0059 A2 1.350 1.400 1.450 0.0531 0.0551 0.0571 b 0.300 0.370 0.450 0.0118 0.0146 0.0177 c 0.090 - 0.200 0.0035 - 0.0079 D 8.800 9.000 9.200 0.3465 0.3543 0.3622 D1 6.800 7.000 7.200 0.2677 0.2756 0.2835 D3 - 5.600 - - 0.2205 - E 8.800 9.000 9.200 0.3465 0.3543 0.3622 E1 6.800 7.000 7.200 0.2677 0.2756 0.2835 E3 - 5.600 - - 0.2205 - e - 0.800 - - 0.0315 - L 0.450 0.600 0.750 0.0177 0.0236 0.0295 L1 - 1.000 - - 0.0394 - k 0° 3.5° 7° 0° 3.5° 7° ccc - - 0.100 - - 0.0039 1. Values in inches are converted from mm and rounded to 4 decimal digits. Figure 43. Recommended footprint for LQFP32 package                    1. Dimensions are expressed in millimeters. 100/117 DocID025832 Rev 5 9B)3B9 STM32F042x4 STM32F042x6 Package information Device marking The following figure gives an example of topside marking orientation versus pin 1 identifier location. Other optional marking or inset/upset marks, which identify the parts throughout supply chain operations, are not indicated below. Figure 44. LQFP32 package marking example 3URGXFWLGHQWLILFDWLRQ  670) .7 'DWHFRGH 3LQLGHQWLILFDWLRQ < :: 5HYLVLRQFRGH 5 06Y9 1. Parts marked as "ES", "E" or accompanied by an Engineering Sample notification letter, are not yet qualified and therefore not yet ready to be used in production and any consequences deriving from such usage will not be at ST charge. In no event, ST will be liable for any customer usage of these engineering samples in production. ST Quality has to be contacted prior to any decision to use these Engineering Samples to run qualification activity. 7.5 UFQFPN32 package information UFQFPN32 is a 32-pin, 5x5 mm, 0.5 mm pitch ultra-thin fine-pitch quad flat package. DocID025832 Rev 5 101/117 113 Package information STM32F042x4 STM32F042x6 Figure 45. UFQFPN32 package outline ' $ H $ $ ' GGG & & 6($7,1* 3/$1( E H ( E ( (  /  3,1,GHQWLILHU ' / $%B0(B9 1. Drawing is not to scale. 2. All leads/pads should also be soldered to the PCB to improve the lead/pad solder joint life. 3. There is an exposed die pad on the underside of the UFQFPN package. This pad is used for the device ground and must be connected. It is referred to as pin 0 in Table: Pin definitions. 102/117 DocID025832 Rev 5 STM32F042x4 STM32F042x6 Package information Table 71. UFQFPN32 package mechanical data inches(1) millimeters Symbol Min Typ Max Min Typ Max A 0.500 0.550 0.600 0.0197 0.0217 0.0236 A1 0.000 0.020 0.050 0.0000 0.0008 0.0020 A3 - 0.152 - - 0.0060 - b 0.180 0.230 0.280 0.0071 0.0091 0.0110 D 4.900 5.000 5.100 0.1929 0.1969 0.2008 D1 3.400 3.500 3.600 0.1339 0.1378 0.1417 D2 3.400 3.500 3.600 0.1339 0.1378 0.1417 E 4.900 5.000 5.100 0.1929 0.1969 0.2008 E1 3.400 3.500 3.600 0.1339 0.1378 0.1417 E2 3.400 3.500 3.600 0.1339 0.1378 0.1417 e - 0.500 - - 0.0197 - L 0.300 0.400 0.500 0.0118 0.0157 0.0197 ddd - - 0.080 - - 0.0031 1. Values in inches are converted from mm and rounded to 4 decimal digits. Figure 46. Recommended footprint for UFQFPN32 package                    $%B)3B9 1. Dimensions are expressed in millimeters. DocID025832 Rev 5 103/117 113 Package information STM32F042x4 STM32F042x6 Device marking The following figure gives an example of topside marking orientation versus pin 1 identifier location. Other optional marking or inset/upset marks, which identify the parts throughout supply chain operations, are not indicated below. Figure 47. UFQFPN32 package marking example 3URGXFWLGHQWLILFDWLRQ  ). 'DWHFRGH < :: 5HYLVLRQFRGH 5 'RW SLQ  06Y9 1. Parts marked as "ES", "E" or accompanied by an Engineering Sample notification letter, are not yet qualified and therefore not yet ready to be used in production and any consequences deriving from such usage will not be at ST charge. In no event, ST will be liable for any customer usage of these engineering samples in production. ST Quality has to be contacted prior to any decision to use these Engineering Samples to run qualification activity. 104/117 DocID025832 Rev 5 STM32F042x4 STM32F042x6 7.6 Package information UFQFPN28 package information UFQFPN28 is a 28-lead, 4x4 mm, 0.5 mm pitch, ultra-thin fine-pitch quad flat package. Figure 48. UFQFPN28 package outline 'HWDLO< ' ( ' ' ( 'HWDLO= $%B0(B9 1. Drawing is not to scale. Table 72. UFQFPN28 package mechanical data(1) millimeters inches Symbol Min Typ Max Min Typ Max A 0.500 0.550 0.600 0.0197 0.0217 0.0236 A1 - 0.000 0.050 - 0.0000 0.0020 D 3.900 4.000 4.100 0.1535 0.1575 0.1614 D1 2.900 3.000 3.100 0.1142 0.1181 0.1220 E 3.900 4.000 4.100 0.1535 0.1575 0.1614 E1 2.900 3.000 3.100 0.1142 0.1181 0.1220 L 0.300 0.400 0.500 0.0118 0.0157 0.0197 L1 0.250 0.350 0.450 0.0098 0.0138 0.0177 T - 0.152 - - 0.0060 - b 0.200 0.250 0.300 0.0079 0.0098 0.0118 e - 0.500 - - 0.0197 - DocID025832 Rev 5 105/117 113 Package information STM32F042x4 STM32F042x6 1. Values in inches are converted from mm and rounded to 4 decimal digits. Figure 49. Recommended footprint for UFQFPN28 package               $%B)3B9 1. Dimensions are expressed in millimeters. 106/117 DocID025832 Rev 5 STM32F042x4 STM32F042x6 Package information Device marking The following figure gives an example of topside marking orientation versus pin 1 identifier location. Other optional marking or inset/upset marks, which identify the parts throughout supply chain operations, are not indicated below. Figure 50. UFQFPN28 package marking example 3URGXFWLGHQWLILFDWLRQ  )* 'DWHFRGH < :: 5 5HYLVLRQFRGH 'RW 06Y9 1. Parts marked as "ES", "E" or accompanied by an Engineering Sample notification letter, are not yet qualified and therefore not yet ready to be used in production and any consequences deriving from such usage will not be at ST charge. In no event, ST will be liable for any customer usage of these engineering samples in production. ST Quality has to be contacted prior to any decision to use these Engineering Samples to run qualification activity. DocID025832 Rev 5 107/117 113 Package information 7.7 STM32F042x4 STM32F042x6 TSSOP20 package information TSSOP20 is a 20-lead thin shrink small-outline, 6.5 x 4.4 mm, 0.65 mm pitch, package. Figure 51.TSSOP20 package outline  ϮϬ ϭϭ Đ ϭ ϭ  ^d/E' W>E  Ϭ͘Ϯϱŵŵ 'h'W>E ϭϬ W/Eϭ /Ed/&/d/KE Ŭ ĂĂĂ  ϭ  Ϯ ď > >ϭ Ğ zͺDͺsϯ 1. Drawing is not to scale. Table 73. TSSOP20 package mechanical data inches(1) millimeters Symbol Min. Typ. Max. Min. Typ. Max. A - - 1.200 - - 0.0472 A1 0.050 - 0.150 0.0020 - 0.0059 A2 0.800 1.000 1.050 0.0315 0.0394 0.0413 b 0.190 - 0.300 0.0075 - 0.0118 c 0.090 - 0.200 0.0035 - 0.0079 (2) 6.400 6.500 6.600 0.2520 0.2559 0.2598 E 6.200 6.400 6.600 0.2441 0.2520 0.2598 E1(3) 4.300 4.400 4.500 0.1693 0.1732 0.1772 e - 0.650 - - 0.0256 - L 0.450 0.600 0.750 0.0177 0.0236 0.0295 D 108/117 DocID025832 Rev 5 STM32F042x4 STM32F042x6 Package information Table 73. TSSOP20 package mechanical data (continued) inches(1) millimeters Symbol Min. Typ. Max. Min. Typ. Max. L1 - 1.000 - - 0.0394 - k 0° - 8° 0° - 8° aaa - - 0.100 - - 0.0039 1. Values in inches are converted from mm and rounded to four decimal digits. 2. Dimension “D” does not include mold flash, protrusions or gate burrs. Mold flash, protrusions or gate burrs shall not exceed 0.15mm per side. 3. Dimension “E1” does not include interlead flash or protrusions. Interlead flash or protrusions shall not exceed 0.25mm per side. Figure 52. Recommended footprint for TSSOP20 package             
STM32F042F6P6TR 价格&库存

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STM32F042F6P6TR
  •  国内价格 香港价格
  • 1+18.709601+2.26320
  • 10+15.9547010+1.92990
  • 100+13.79870100+1.66910
  • 250+13.10390250+1.58510
  • 500+12.42120500+1.50250
  • 2500+12.421202500+1.50250

库存:0

STM32F042F6P6TR
    •  国内价格
    • 90+13.26640

    库存:0

    STM32F042F6P6TR
    •  国内价格
    • 1+8.62920
    • 10+7.30080
    • 30+6.57720
    • 100+5.48640

    库存:0