STM32F107VCT6

BZX55C Silicon Planar Zener Diodes The Zener voltages are graded according to the international E24 standard. Other tolerances and higher Zener voltages are upon request. Max. 0.5 Max. 0.45 Min. 27.5 Max. 1.9 Black Cathode Band Black Part No. Black "ST" Brand Black Cathode Band XXX Black Part No. Max. 3.9 ST Glass Case DO-35 Dimensions in mm E T M E S Absolute Maximum Ratings (Ta = 25℃) Power Dissipation Ptot Junction Temperature Tj Storage Temperature Range 1) Symbol Tstg XXX Max. 2.9 H C Min. 27.5 Parameter Min. 27.5 Max. 1.9 Min. 27.5 Glass Case DO-34 Dimensions in mm Value Unit 1) mW 500 175 ℃ - 55 to + 175 ℃ Valid provided that leads are kept at ambient temperature at a distance of 8 mm from case. Characteristics at Ta = 25℃ Parameter Thermal Resistance Junction to Ambient Air Forward Voltage at IF = 100 mA 1) Symbol RthA Max. 0.3 VF 1 1) Unit K/mW V Valid provided that leads are kept at ambient temperature at a distance of 8 mm from case. SEMTECH ELECTRONICS LTD. Subsidiary of Sino-Tech International (BVI) Limited ® Dated : 02/09/2013 Rev : 01 BZX55C Zener Voltage Range Type Vznom 2) Dynamic Resistance Reverse Leakage Current VZT at IZT ZZT ZZK at IZK Ta =25℃ Ta =125℃ IR at VR Temp. Coefficient of Zener Voltage (V) (V) (mA) Max. (Ω) Max. (Ω) (mA) Max. (µA) Max. (µA) (V) TKvz (%/K) 0.8 0.73...0.83 5 8 50 1 - - - -0.26...-0.23 BZX55C2V0 2 1.8...2.15 5 85 600 1 100 200 1 -0.09...-0.06 BZX55C2V2 2.2 2.08...2.33 5 85 600 1 75 160 1 -0.09...-0.06 BZX55C2V4 2.4 2.28...2.56 5 85 600 1 50 100 1 -0.09...-0.06 BZX55C2V7 2.7 2.5...2.9 5 85 600 1 10 50 1 -0.09...-0.06 BZX55C0V8 1) 1) 2) BZX55C3V0 3 2.8...3.2 5 85 600 1 4 40 1 -0.08...-0.05 BZX55C3V3 3.3 3.1...3.5 5 85 600 1 2 40 1 -0.08...-0.05 BZX55C3V6 3.6 3.4...3.8 5 85 600 1 2 40 1 -0.08...-0.05 BZX55C3V9 3.9 3.7...4.1 5 85 600 1 2 40 1 -0.08...-0.05 BZX55C4V3 4.3 4...4.6 5 75 600 1 1 20 1 -0.06...-0.03 BZX55C4V7 4.7 4.4...5 5 60 600 1 0.5 10 1 -0.05...+0.02 BZX55C5V1 5.1 4.8...5.4 5 35 550 1 0.1 2 1 -0.02...+0.02 BZX55C5V6 5.6 5.2...6 5 25 450 1 0.1 2 1 -0.05...+0.05 BZX55C6V2 6.2 5.8...6.6 5 10 200 1 0.1 2 2 0.03...0.06 E T M E S 3 0.03...0.07 6.4...7.2 5 8 150 1 0.1 H C BZX55C6V8 6.8 2 BZX55C7V5 7.5 7...7.9 5 7 50 1 0.1 2 5 0.03...0.07 BZX55C8V2 8.2 7.7...8.7 5 7 50 1 0.1 2 6.2 0.03...0.08 BZX55C9V1 9.1 8.5...9.6 5 10 50 1 0.1 2 6.8 0.03...0.09 BZX55C10 10 9.4...10.6 5 15 70 1 0.1 2 7.5 0.03...0.1 BZX55C11 11 10.4...11.6 5 20 70 1 0.1 2 8.2 0.03...0.11 BZX55C12 12 11.4...12.7 5 20 90 1 0.1 2 9.1 0.03...0.11 BZX55C13 13 12.4...14.1 5 26 110 1 0.1 2 10 0.03...0.11 BZX55C15 15 13.8...15.6 5 30 110 1 0.1 2 11 0.03...0.11 BZX55C16 16 15.3...17.1 5 40 170 1 0.1 2 12 0.03...0.11 BZX55C18 18 16.8...19.1 5 50 170 1 0.1 2 13 0.03...0.11 BZX55C20 20 18.8...21.2 5 55 220 1 0.1 2 15 0.03...0.11 BZX55C22 22 20.8...23.3 5 55 220 1 0.1 2 16 0.04...0.12 BZX55C24 24 22.8...25.6 5 80 220 1 0.1 2 18 0.04...0.12 BZX55C27 27 25.1...28.9 5 80 220 1 0.1 2 20 0.04...0.12 BZX55C30 30 28...32 5 80 220 1 0.1 2 22 0.04...0.12 BZX55C33 33 31...35 5 80 220 1 0.1 2 24 0.04...0.12 BZX55C36 36 34...38 5 80 220 1 0.1 2 27 0.04...0.12 BZX55C39 39 37...41 2.5 90 500 0.5 0.1 5 30 0.04...0.12 BZX55C43 43 40...46 2.5 90 500 0.5 0.1 5 33 0.04...0.12 BZX55C47 47 44...50 2.5 110 600 0.5 0.1 5 36 0.04...0.12 BZX55C51 51 48...54 2.5 125 700 0.5 0.1 10 39 0.04...0.12 BZX55C56 56 52...60 2.5 135 700 0.5 0.1 10 43 0.04...0.12 BZX55C62 62 58...66 2.5 150 1000 0.5 0.1 10 47 0.04...0.12 BZX55C68 68 64...72 2.5 200 1000 0.5 0.1 10 51 0.04...0.12 BZX55C75 75 70...79 2.5 250 1000 0.5 0.1 10 56 0.04...0.12 BZX55C82 82 77…87 2.5 300 1500 0.25 0.1 10 62 0.05…0.12 Tested with pulses tp = 20 ms. The BZX55C0V8 is a silicon diode with operation in forward direction. Hence, the index of all parameters should be "F" instead of "Z". Connect the cathode lead to the negative pole. SEMTECH ELECTRONICS LTD. Subsidiary of Sino-Tech International (BVI) Limited ® Dated : 02/09/2013 Rev : 01 BZX55C H C E T M E S SEMTECH ELECTRONICS LTD. Subsidiary of Sino-Tech International (BVI) Limited ® Dated : 02/09/2013 Rev : 01