STM32L475xx
Ultra-low-power Arm® Cortex®-M4 32-bit MCU+FPU, 100DMIPS,
up to 1MB Flash, 128 KB SRAM, USB OTG FS, analog, audio
Datasheet - production data
Features
• Ultra-low-power with FlexPowerControl
– 1.71 V to 3.6 V power supply
– -40 °C to 85/105/125 °C temperature range
– 300 nA in VBAT mode: supply for RTC and
32x32-bit backup registers
– 30 nA Shutdown mode (5 wakeup pins)
– 120 nA Standby mode (5 wakeup pins)
– 420 nA Standby mode with RTC
– 1.1 µA Stop 2 mode, 1.4 µA with RTC
– 100 µA/MHz run mode
– Batch acquisition mode (BAM)
– 4 µs wakeup from Stop mode
– Brown out reset (BOR)
– Interconnect matrix
• Core: Arm® 32-bit Cortex®-M4 CPU with FPU,
Adaptive real-time accelerator (ART
Accelerator™) allowing 0-wait-state execution
from Flash memory, frequency up to 80 MHz,
MPU, 100DMIPS and DSP instructions
• Performance benchmark
– 1.25 DMIPS/MHz (Drystone 2.1)
– 273.55 CoreMark® (3.42 CoreMark/MHz @
80 MHz)
• Energy benchmark
– 294 ULPMark™ CP score
– 106 ULPMark™ PP score
• Clock Sources
– 4 to 48 MHz crystal oscillator
– 32 kHz crystal oscillator for RTC (LSE)
– Internal 16 MHz factory-trimmed RC (±1%)
– Internal low-power 32 kHz RC (±5%)
– Internal multispeed 100 kHz to 48 MHz
oscillator, auto-trimmed by LSE (better than
±0.25 % accuracy)
– 3 PLLs for system clock, USB, audio, ADC
• Up to 114 fast I/Os, most 5 V-tolerant
March 2019
This is information on a product in full production.
LQFP100 (14 x 14)
LQFP64 (10 x 10)
• RTC with HW calendar, alarms and calibration
• Up to 21 capacitive sensing channels: support
touchkey, linear and rotary touch sensors
• 16x timers: 2x 16-bit advanced motor-control,
2x 32-bit and 5x 16-bit general purpose, 2x 16bit basic, 2x low-power 16-bit timers (available
in Stop mode), 2x watchdogs, SysTick timer
• Memories
– Up to 1 MB Flash, 2 banks read-whilewrite, proprietary code readout protection
– Up to 128 KB of SRAM including 32 KB
with hardware parity check
– External memory interface for static
memories supporting SRAM, PSRAM and
NOR memories
– Quad SPI memory interface
• 4x digital filters for sigma delta modulator
• Rich analog peripherals (independent supply)
– 3x 12-bit ADC 5 Msps, up to 16-bit with
hardware oversampling, 200 µA/Msps
– 2x 12-bit DAC output channels, low-power
sample and hold
– 2x operational amplifiers with built-in PGA
– 2x ultra-low-power comparators
• 20x communication interfaces
– USB OTG 2.0 full-speed, LPM and BCD
– 2x SAIs (serial audio interface)
– 3x I2C FM+(1 Mbit/s), SMBus/PMBus
– 5x USARTs (ISO 7816, LIN, IrDA, modem)
– 1x LPUART (Stop 2 wake-up)
– 3x SPIs (and 1x Quad SPI)
– CAN (2.0B Active) and SDMMC interface
– SWPMI single wire protocol master I/F
– IRTIM (Infrared interface)
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STM32L475xx
• 14-channel DMA controller
• True random number generator
• Development support: serial wire debug
(SWD), JTAG, Embedded Trace Macrocell™
• All packages are ECOPACK2® compliant
• CRC calculation unit, 96-bit unique ID
Table 1. Device summary
Reference
STM32L475xx
2/204
Part numbers
STM32L475RG, STM32L475VG, STM32L475RE, STM32L475VE, STM32L475RC,
STM32L475VC
DS10969 Rev 5
STM32L475xx
Contents
Contents
1
Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
3
Functional overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
3.1
Arm® Cortex®-M4 core with FPU . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
3.2
Adaptive real-time memory accelerator (ART Accelerator™) . . . . . . . . . 16
3.3
Memory protection unit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
3.4
Embedded Flash memory . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
3.5
Embedded SRAM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
3.6
Firewall . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
3.7
Boot modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
3.8
Cyclic redundancy check calculation unit (CRC) . . . . . . . . . . . . . . . . . . . 19
3.9
Power supply management . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
3.9.1
Power supply schemes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
3.9.2
Power supply supervisor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
3.9.3
Voltage regulator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
3.9.4
Low-power modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
3.9.5
Reset mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
3.9.6
VBAT operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
3.10
Interconnect matrix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
3.11
Clocks and startup . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
3.12
General-purpose inputs/outputs (GPIOs) . . . . . . . . . . . . . . . . . . . . . . . . . 36
3.13
Direct memory access controller (DMA) . . . . . . . . . . . . . . . . . . . . . . . . . . 36
3.14
Interrupts and events . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
3.15
3.16
3.14.1
Nested vectored interrupt controller (NVIC) . . . . . . . . . . . . . . . . . . . . . . 37
3.14.2
Extended interrupt/event controller (EXTI) . . . . . . . . . . . . . . . . . . . . . . 37
Analog to digital converter (ADC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
3.15.1
Temperature sensor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
3.15.2
Internal voltage reference (VREFINT) . . . . . . . . . . . . . . . . . . . . . . . . . . 39
3.15.3
VBAT battery voltage monitoring . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
Digital to analog converter (DAC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
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STM32L475xx
3.17
Voltage reference buffer (VREFBUF) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
3.18
Comparators (COMP) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
3.19
Operational amplifier (OPAMP) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
3.20
Touch sensing controller (TSC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
3.21
Digital filter for Sigma-Delta Modulators (DFSDM) . . . . . . . . . . . . . . . . . . 42
3.22
Random number generator (RNG) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
3.23
Timers and watchdogs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
3.23.1
Advanced-control timer (TIM1, TIM8) . . . . . . . . . . . . . . . . . . . . . . . . . . 45
3.23.2
General-purpose timers (TIM2, TIM3, TIM4, TIM5, TIM15, TIM16,
TIM17) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
3.23.3
Basic timers (TIM6 and TIM7) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
3.23.4
Low-power timer (LPTIM1 and LPTIM2) . . . . . . . . . . . . . . . . . . . . . . . . 46
3.23.5
Infrared interface (IRTIM) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
3.23.6
Independent watchdog (IWDG) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
3.23.7
System window watchdog (WWDG) . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
3.23.8
SysTick timer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
3.24
Real-time clock (RTC) and backup registers . . . . . . . . . . . . . . . . . . . . . . 48
3.25
Inter-integrated circuit interface (I2C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49
3.26
Universal synchronous/asynchronous receiver transmitter (USART) . . . 50
3.27
Low-power universal asynchronous receiver transmitter (LPUART) . . . . 51
3.28
Serial peripheral interface (SPI) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52
3.29
Serial audio interfaces (SAI) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52
3.30
Single wire protocol master interface (SWPMI) . . . . . . . . . . . . . . . . . . . . 53
3.31
Controller area network (CAN) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53
3.32
Secure digital input/output and MultiMediaCards Interface (SDMMC) . . . 54
3.33
Universal serial bus on-the-go full-speed (OTG_FS) . . . . . . . . . . . . . . . . 54
3.34
Flexible static memory controller (FSMC) . . . . . . . . . . . . . . . . . . . . . . . . 55
3.35
Quad SPI memory interface (QUADSPI) . . . . . . . . . . . . . . . . . . . . . . . . . 55
3.36
Development support . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57
3.36.1
Serial wire JTAG debug port (SWJ-DP) . . . . . . . . . . . . . . . . . . . . . . . . . 57
3.36.2
Embedded Trace Macrocell™ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57
4
Pinouts and pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58
5
Memory mapping . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80
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Contents
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85
6.1
Parameter conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85
6.1.1
Minimum and maximum values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85
6.1.2
Typical values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85
6.1.3
Typical curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85
6.1.4
Loading capacitor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85
6.1.5
Pin input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85
6.1.6
Power supply scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 86
6.1.7
Current consumption measurement . . . . . . . . . . . . . . . . . . . . . . . . . . . 87
6.2
Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 87
6.3
Operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90
6.3.1
General operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90
6.3.2
Operating conditions at power-up / power-down . . . . . . . . . . . . . . . . . . 91
6.3.3
Embedded reset and power control block characteristics . . . . . . . . . . . 91
6.3.4
Embedded voltage reference . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 93
6.3.5
Supply current characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 95
6.3.6
Wakeup time from low-power modes and voltage scaling
transition times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 114
6.3.7
External clock source characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 116
6.3.8
Internal clock source characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 121
6.3.9
PLL characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 126
6.3.10
Flash memory characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 127
6.3.11
EMC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 129
6.3.12
Electrical sensitivity characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . 130
6.3.13
I/O current injection characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . 131
6.3.14
I/O port characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 132
6.3.15
NRST pin characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 138
6.3.16
Extended interrupt and event controller input (EXTI) characteristics . . 139
6.3.17
Analog switches booster . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 139
6.3.18
Analog-to-Digital converter characteristics . . . . . . . . . . . . . . . . . . . . . 140
6.3.19
Digital-to-Analog converter characteristics . . . . . . . . . . . . . . . . . . . . . 153
6.3.20
Voltage reference buffer characteristics . . . . . . . . . . . . . . . . . . . . . . . 158
6.3.21
Comparator characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160
6.3.22
Operational amplifiers characteristics . . . . . . . . . . . . . . . . . . . . . . . . . 161
6.3.23
Temperature sensor characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . 165
6.3.24
VBAT monitoring characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 165
6.3.25
DFSDM characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 166
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STM32L475xx
6.3.26
Timer characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 167
6.3.27
Communication interfaces characteristics . . . . . . . . . . . . . . . . . . . . . . 169
6.3.28
FSMC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 182
6.3.29
SWPMI characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 190
Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 191
7.1
LQFP100 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 191
7.2
LQFP64 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 195
7.3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 198
7.3.1
Reference document . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 198
7.3.2
Selecting the product temperature range . . . . . . . . . . . . . . . . . . . . . . 198
8
Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 201
9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 202
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List of tables
List of tables
Table 1.
Table 2.
Table 3.
Table 4.
Table 5.
Table 6.
Table 7.
Table 8.
Table 9.
Table 10.
Table 11.
Table 12.
Table 13.
Table 14.
Table 15.
Table 16.
Table 17.
Table 18.
Table 19.
Table 20.
Table 21.
Table 22.
Table 23.
Table 24.
Table 25.
Table 26.
Table 27.
Table 28.
Table 29.
Table 30.
Table 31.
Table 32.
Table 33.
Table 34.
Table 35.
Table 36.
Table 37.
Table 38.
Table 39.
Table 40.
Table 41.
Table 42.
Device summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
STM32L475xx family device features and peripheral counts . . . . . . . . . . . . . . . . . . . . . . . 13
Access status versus readout protection level and execution modes. . . . . . . . . . . . . . . . . 17
STM32L475xx modes overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Functionalities depending on the working mode. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
STM32L475xx peripherals interconnect matrix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
DMA implementation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
Temperature sensor calibration values. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
Internal voltage reference calibration values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
DFSDM1 implementation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
Timer feature comparison . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
I2C implementation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49
STM32L475xx USART/UART/LPUART features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50
SAI implementation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53
Legend/abbreviations used in the pinout table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 59
STM32L475xx pin definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60
Alternate function AF0 to AF7. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 69
Alternate function AF8 to AF15. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75
STM32L475xx memory map and peripheral register boundary addresses . . . . . . . . . . . . 81
Voltage characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 87
Current characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 88
Thermal characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 89
General operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90
Operating conditions at power-up / power-down . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 91
Embedded reset and power control block characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 91
Embedded internal voltage reference . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 93
Current consumption in Run and Low-power run modes, code with data processing
running from Flash, ART enable (Cache ON Prefetch OFF) . . . . . . . . . . . . . . . . . . . . . . . 96
Current consumption in Run and Low-power run modes, code with data processing
running from Flash, ART disable . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 97
Current consumption in Run and Low-power run modes, code with data processing
running from SRAM1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 98
Typical current consumption in Run and Low-power run modes, with different codes
running from Flash, ART enable (Cache ON Prefetch OFF) . . . . . . . . . . . . . . . . . . . . . . . 99
Typical current consumption in Run and Low-power run modes, with different codes
running from Flash, ART disable . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 99
Typical current consumption in Run and Low-power run modes, with different codes
running from SRAM1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100
Current consumption in Sleep and Low-power sleep modes, Flash ON . . . . . . . . . . . . . 101
Current consumption in Low-power sleep modes, Flash in power-down . . . . . . . . . . . . . 102
Current consumption in Stop 2 mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 102
Current consumption in Stop 1 mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 103
Current consumption in Stop 0 mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 105
Current consumption in Standby mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 106
Current consumption in Shutdown mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 107
Current consumption in VBAT mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 109
Peripheral current consumption . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 111
Low-power mode wakeup timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 114
DS10969 Rev 5
7/204
9
List of tables
Table 43.
Table 44.
Table 45.
Table 46.
Table 47.
Table 48.
Table 49.
Table 50.
Table 51.
Table 52.
Table 53.
Table 54.
Table 55.
Table 56.
Table 57.
Table 58.
Table 59.
Table 60.
Table 61.
Table 62.
Table 63.
Table 64.
Table 65.
Table 66.
Table 67.
Table 68.
Table 69.
Table 70.
Table 71.
Table 72.
Table 73.
Table 74.
Table 75.
Table 76.
Table 77.
Table 78.
Table 79.
Table 80.
Table 81.
Table 82.
Table 83.
Table 84.
Table 85.
Table 86.
Table 87.
Table 88.
Table 89.
Table 90.
Table 91.
Table 92.
Table 93.
Table 94.
8/204
STM32L475xx
Regulator modes transition times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 116
Wakeup time using USART/LPUART . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 116
High-speed external user clock characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 116
Low-speed external user clock characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 117
HSE oscillator characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 118
LSE oscillator characteristics (fLSE = 32.768 kHz) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 119
HSI16 oscillator characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 121
MSI oscillator characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .123
LSI oscillator characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 126
PLL, PLLSAI1, PLLSAI2 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 127
Flash memory characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 127
Flash memory endurance and data retention . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 128
EMS characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 129
EMI characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130
ESD absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130
Electrical sensitivities . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 131
I/O current injection susceptibility . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 131
I/O static characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 132
Output voltage characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 135
I/O AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 136
NRST pin characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 138
EXTI input characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 139
Analog switches booster characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 139
ADC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140
Maximum ADC RAIN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 142
ADC accuracy - limited test conditions 1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 144
ADC accuracy - limited test conditions 2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 146
ADC accuracy - limited test conditions 3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 148
ADC accuracy - limited test conditions 4 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150
DAC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 153
DAC accuracy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 156
VREFBUF characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 158
COMP characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160
OPAMP characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 161
TS characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 165
VBAT monitoring characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 165
VBAT charging characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 165
DFSDM characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 166
TIMx characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 168
IWDG min/max timeout period at 32 kHz (LSI). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 168
WWDG min/max timeout value at 80 MHz (PCLK). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 168
I2C analog filter characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 169
SPI characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 170
Quad SPI characteristics in SDR mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 173
QUADSPI characteristics in DDR mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174
SAI characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175
SD / MMC dynamic characteristics, VDD=2.7 V to 3.6 V . . . . . . . . . . . . . . . . . . . . . . . . . 177
eMMC dynamic characteristics, VDD = 1.71 V to 1.9 V . . . . . . . . . . . . . . . . . . . . . . . . . . 178
USB OTG DC electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 179
USB OTG electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180
USB BCD DC electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180
Asynchronous multiplexed PSRAM/NOR read timings. . . . . . . . . . . . . . . . . . . . . . . . . . . 184
DS10969 Rev 5
STM32L475xx
Table 95.
Table 96.
Table 97.
Table 98.
Table 99.
Table 100.
Table 101.
Table 102.
Table 103.
Table 104.
Table 105.
List of tables
Asynchronous multiplexed PSRAM/NOR read-NWAIT timings . . . . . . . . . . . . . . . . . . . . 184
Asynchronous multiplexed PSRAM/NOR write timings . . . . . . . . . . . . . . . . . . . . . . . . . . 186
Asynchronous multiplexed PSRAM/NOR write-NWAIT timings . . . . . . . . . . . . . . . . . . . . 186
Synchronous multiplexed NOR/PSRAM read timings . . . . . . . . . . . . . . . . . . . . . . . . . . . 188
Synchronous multiplexed PSRAM write timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 190
SWPMI electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 190
LQFP - 100 pins, 14 x 14 mm low-profile quad flat package
mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 192
LQFP - 64 pins, 10 x 10 mm low-profile quad flat
package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 195
Package thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 198
STM32L475xx ordering information scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 201
Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 202
DS10969 Rev 5
9/204
9
List of figures
STM32L475xx
List of figures
Figure 1.
Figure 2.
Figure 3.
Figure 4.
Figure 5.
Figure 6.
Figure 7.
Figure 8.
Figure 9.
Figure 10.
Figure 11.
Figure 12.
Figure 13.
Figure 14.
Figure 15.
Figure 16.
Figure 17.
Figure 18.
Figure 19.
Figure 20.
Figure 21.
Figure 22.
Figure 23.
Figure 24.
Figure 25.
Figure 26.
Figure 27.
Figure 28.
Figure 29.
Figure 30.
Figure 31.
Figure 32.
Figure 33.
Figure 34.
Figure 35.
Figure 36.
Figure 37.
Figure 38.
Figure 39.
Figure 40.
Figure 41.
Figure 42.
Figure 43.
Figure 44.
Figure 45.
Figure 46.
10/204
STM32L475xx block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Power supply overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Power-up/down sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Clock tree . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
Voltage reference buffer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
STM32L475Vx LQFP100 pinout(1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58
STM32L475Rx LQFP64 pinout(1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 59
STM32L475xx memory map. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80
Pin loading conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85
Pin input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85
Power supply scheme. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 86
Current consumption measurement scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 87
VREFINT versus temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 94
High-speed external clock source AC timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . 117
Low-speed external clock source AC timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . 117
Typical application with an 8 MHz crystal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 119
Typical application with a 32.768 kHz crystal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120
HSI16 frequency versus temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 122
Typical current consumption versus MSI frequency . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 126
I/O input characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 134
I/O AC characteristics definition(1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 138
Recommended NRST pin protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 139
ADC accuracy characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 152
Typical connection diagram using the ADC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 152
12-bit buffered / non-buffered DAC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 155
SPI timing diagram - slave mode and CPHA = 0 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 171
SPI timing diagram - slave mode and CPHA = 1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 172
SPI timing diagram - master mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 172
Quad SPI timing diagram - SDR mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174
Quad SPI timing diagram - DDR mode. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174
SAI master timing waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 176
SAI slave timing waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 177
SDIO high-speed mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 178
SD default mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 179
USB OTG timings – definition of data signal rise and fall time . . . . . . . . . . . . . . . . . . . . . 180
Asynchronous multiplexed PSRAM/NOR read waveforms. . . . . . . . . . . . . . . . . . . . . . . . 183
Asynchronous multiplexed PSRAM/NOR write waveforms . . . . . . . . . . . . . . . . . . . . . . . 185
Synchronous multiplexed NOR/PSRAM read timings . . . . . . . . . . . . . . . . . . . . . . . . . . . 187
Synchronous multiplexed PSRAM write timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 189
LQFP - 100 pins, 14 x 14 mm low-profile quad flat package outline. . . . . . . . . . . . . . . . . 191
LQFP - 100 pins, 14 x 14 mm low-profile quad flat
recommended footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 193
LQFP100 marking (package top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 194
LQFP - 64 pins, 10 x 10 mm low-profile quad flat package outline. . . . . . . . . . . . . . . . . . 195
LQFP - 64 pins, 10 x 10 mm low-profile quad flat package
recommended footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 196
LQFP64 marking (package top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 197
LQFP64 PD max vs. TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200
DS10969 Rev 5
STM32L475xx
1
Introduction
Introduction
This datasheet provides the ordering information and mechanical device characteristics of
the STM32L475xx microcontrollers.
This document should be read in conjunction with the STM32L4x5 reference manual
(RM0351). The reference manual is available from the STMicroelectronics website
www.st.com.
For information on the Arm®(a) Cortex®-M4 core, please refer to the Cortex®-M4 Technical
Reference Manual, available from the www.arm.com website.
a. Arm is a registered trademark of Arm Limited (or its subsidiaries) in the US and/or elsewhere.
DS10969 Rev 5
11/204
57
Description
2
STM32L475xx
Description
The STM32L475xx devices are the ultra-low-power microcontrollers based on the highperformance Arm® Cortex®-M4 32-bit RISC core operating at a frequency of up to 80 MHz.
The Cortex-M4 core features a Floating point unit (FPU) single precision which supports all
Arm® single-precision data-processing instructions and data types. It also implements a full
set of DSP instructions and a memory protection unit (MPU) which enhances application
security.
The STM32L475xx devices embed high-speed memories (Flash memory up to 1 Mbyte, up
to 128 Kbyte of SRAM), a flexible external memory controller (FSMC) for static memories
(for devices with 100 pins package), a Quad SPI flash memories interface (available on all
packages) and an extensive range of enhanced I/Os and peripherals connected to two APB
buses, two AHB buses and a 32-bit multi-AHB bus matrix.
The STM32L475xx devices embed several protection mechanisms for embedded Flash
memory and SRAM: readout protection, write protection, proprietary code readout
protection and Firewall.
The devices offer up to three fast 12-bit ADCs (5 Msps), two comparators, two operational
amplifiers, two DAC channels, an internal voltage reference buffer, a low-power RTC, two
general-purpose 32-bit timer, two 16-bit PWM timers dedicated to motor control, seven
general-purpose 16-bit timers, and two 16-bit low-power timers. The devices support four
digital filters for external sigma delta modulators (DFSDM).
In addition, up to 21 capacitive sensing channels are available.
They also feature standard and advanced communication interfaces.
•
Three I2Cs
•
Three SPIs
•
Three USARTs, two UARTs and one Low-Power UART.
•
Two SAIs (Serial Audio Interfaces)
•
One SDMMC
•
One CAN
•
One USB OTG full-speed
•
One SWPMI (Single Wire Protocol Master Interface)
The STM32L475xx operates in the -40 to +85 °C (+105 °C junction), -40 to +105 °C
(+125 °C junction) and -40 to +125 °C (+130 °C junction) temperature ranges from a 1.71 to
3.6 V power supply. A comprehensive set of power-saving modes allows the design of lowpower applications.
Some independent power supplies are supported: analog independent supply input for
ADC, DAC, OPAMPs and comparators, 3.3 V dedicated supply input for USB and up to 14
I/Os can be supplied independently down to 1.08V. A VBAT input allows to backup the RTC
and backup registers.
The STM32L475xx family offers two packages from 64-pin to 100-pin packages.
12/204
DS10969 Rev 5
STM32L475xx
Description
Table 2. STM32L475xx family device features and peripheral counts
Peripheral
Flash memory
STM32L475Vx
256KB
512KB
SRAM
256KB
Yes(1)
Quad SPI
Comm.
interfaces
1MB
512KB
1MB
128 KB
External memory controller for
static memories
Timers
STM32L475Rx
No
Yes
Advanced control
2 (16-bit)
General purpose
5 (16-bit)
2 (32-bit)
Basic
2 (16-bit)
Low -power
2 (16-bit)
SysTick timer
1
Watchdog timers
(independent,
window)
2
SPI
3
I2C
3
USART
UART
LPUART
3
2
1
SAI
2
CAN
1
USB OTG FS
Yes
SDMMC
Yes
SWPMI
Yes
Digital filters for sigma-delta
modulators
Yes (4 filters)
Number of channels
8
RTC
Yes
Tamper pins
3
Random generator
2
Yes
GPIOs
Wakeup pins
Nb of I/Os down to 1.08 V
82
5
0
51
4
0
Capacitive sensing
Number of channels
21
12
12-bit ADCs
Number of channels
3
16
3
16
12-bit DAC channels
2
DS10969 Rev 5
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57
Description
STM32L475xx
Table 2. STM32L475xx family device features and peripheral counts (continued)
Peripheral
STM32L475Vx
STM32L475Rx
Yes
No
Internal voltage reference buffer
Analog comparator
2
Operational amplifiers
2
Max. CPU frequency
80 MHz
Operating voltage
Operating temperature
Packages
1.71 to 3.6 V
Ambient operating temperature:
-40 to 85 °C / -40 to 105 °C / -40 to 125 °C
Junction temperature:
-40 to 105 °C / -40 to 125 °C / -40 to 130 °C
LQFP100
LQFP64
1. For the LQFP100 package, only FMC Bank1 is available. Bank1 can only support a multiplexed
NOR/PSRAM memory using the NE1 Chip Select.
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DS10969 Rev 5
STM32L475xx
Description
Figure 1. STM32L475xx block diagram
JTCK/SWCLK
JTAG & SW
MPU
ETM
NVIC
JTDO/SWD, JTDO
CLK, NE1, NL, NBL[1:0],
A[23:16], D[15:0], NOE, NWE,
NWAIT as AF
Flexible static memory controller (FSMC):
SRAM, PSRAM, NOR Flash,
NAND Flash
NJTRST, JTDI,
TRACECLK
D-BUS
TRACED[3:0]
ARM Cortex-M4
80 MHz
FPU
BK1_IO[3:0]
CLK
NCS
Quad SPI memory interface
I-BUS
ART
ACCEL/
CACHE
RNG
Flash
up to
1 MB
AHB bus-matrix
S-BUS
SRAM 96 KB
SRAM 32 KB
VDD
AHB2 80 MHz
DMA2
Power management
Voltage
regulator
3.3 to 1.2 V
VDD = 1.71 to 3.6 V
VSS
DMA1
@ VDD
@ VDD
7 Groups of
3 channels max as AF
supervision
RC HSI
Touch sensing controller
Supply
reset
MSI
VDDUSB
Int
BOR
VDDA, VSSA
RC LSI
PA[15:0]
VDD, VSS, NRST
GPIO PORT A
GPIO PORT B
PC[15:0]
GPIO PORT C
PD[15:0]
GPIO PORT D
PE[15:0]
GPIO PORT E
AHB1 80 MHz
PB[15:0]
PVD, PVM
PLL 1&2&3
@VDD
OSC_IN
XTAL OSC
OSC_OUT
4- 16MHz
IWDG
VBAT = 1.55 to 3.6 V
Standby
PH[1:0]
interface
Reset & clock
M AN
AGT
control
@VBAT
GPIO PORT H
XTAL 32 kHz
OSC32_IN
OSC32_OUT
PCLKx
FCLK
HCLKx
RTC
RTC_TS
AWU
Backup register
RTC_TAMPx
RTC_OUT
@ VDD
U STemperature
AR T 2 M sensor
Bps
TIM2
32b
4 channels, ETR as AF
TIM3
16b
4 channels, ETR as AF
TIM4
16b
4 channels, ETR as AF
32b
4 channels
CRC
@ VDDA
ADC1
ITF
ADC2
TIM5
@ VDDA
VREF+
USART2
VREF Buffer
AHB/APB2
TIM1 / PWM
16b
3 compl. channels (TIM1_CH[1:3]N),
4 channels (TIM1_CH[1:4]),
ETR, BKIN, BKIN2 as AF
TIM8 / PWM
16b
2 channels,
1 compl. channel, BKIN as AF
TIM15
16b
1 channel,
1 compl. channel, BKIN as AF
TIM16
16b
1 channel,
1 compl. channel, BKIN as AF
TIM17
16b
smcard
USART1
IrDA
TIM6
MOSI, MISO,
SCK, NSS as AF
SPI1
MCLK_A, SD_A, FS_A, SCK_A, EXTCLK
MCLK_B, SD_B, FS_B, SCK_B as AF
SAI1
MCLK_A, SD_A, FS_A, SCK_A, EXTCLK
MCLK_B, SD_B, FS_B, SCK_B as AF
SAI2
SDCKIN[7:0], SDDATIN[7:0],
SDCKOUT,SDTRIG as AF
DFSDM
TIM7
16b
16b
A
60PM
B Hz
2
RX, TX, CK,CTS,
RTS as AF
WWDG
@ VDDA
A P B(max)
1 3 0 M Hz
APB1 80 MHz
3 compl. channels (TIM1_CH[1:3]N),
4 channels (TIM1_CH[1:4]),
ETR, BKIN, BKIN2 as AF
APB2 80MHz
SDIO / MMC
FIFO
EXT IT. WKUP
D[7:0]
CMD, CK as AF
IrDA
RX, TX, CK, CTS, RTS as AF
AHB/APB1
USART3
114 AF
smcard
smcard
RX, TX, CK, CTS, RTS as AF
IrDA
UART4
RX, TX, CTS, RTS as AF
UART5
RX, TX, CTS, RTS as AF
SP2
MOSI, MISO, SCK, NSS as AF
SP3
MOSI, MISO, SCK, NSS as AF
I2C1/SMBUS
SCL, SDA, SMBA as AF
I2C2/SMBUS
SCL, SDA, SMBA as AF
I2C3/SMBUS
SCL, SDA, SMBA as AF
bxCAN1
FIFO
16 analog inputs
common
to the 2 ADCs
TX, RX as AF
@VDDA
OpAmp1
VOUT, VINM, VINP
OpAmp2
VOUT, VINM, VINP
LPUART1
RX, TX, CTS, RTS as AF
SWPMI1
IO
RX, TX, SUSPEND as AF
LPTIM1
IN1, IN2, OUT, ETR as AF
LPTIM2
IN1, OUT, ETR as AF
@ VDDA
INP, INM, OUT
COMP1
INP, INM, OUT
COMP2
DAC1
ITF
DAC2
Firewall
OUT1
Note:
OUT2
MSv37693V3
AF: alternate function on I/O pins.
DS10969 Rev 5
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57
Functional overview
STM32L475xx
3
Functional overview
3.1
Arm® Cortex®-M4 core with FPU
The Arm® Cortex®-M4 with FPU processor is the latest generation of Arm® processors for
embedded systems. It was developed to provide a low-cost platform that meets the needs of
MCU implementation, with a reduced pin count and low-power consumption, while
delivering outstanding computational performance and an advanced response to interrupts.
The Arm® Cortex®-M4 with FPU 32-bit RISC processor features exceptional codeefficiency, delivering the high-performance expected from an Arm® core in the memory size
usually associated with 8- and 16-bit devices.
The processor supports a set of DSP instructions which allow efficient signal processing and
complex algorithm execution.
Its single precision FPU speeds up software development by using metalanguage
development tools, while avoiding saturation.
With its embedded Arm® core, the STM32L475xx family is compatible with all Arm® tools
and software.
Figure 1 shows the general block diagram of the STM32L475xx family devices.
3.2
Adaptive real-time memory accelerator (ART Accelerator™)
The ART Accelerator™ is a memory accelerator which is optimized for STM32 industrystandard Arm® Cortex®-M4 processors. It balances the inherent performance advantage of
the Arm® Cortex®-M4 over Flash memory technologies, which normally requires the
processor to wait for the Flash memory at higher frequencies.
To release the processor near 100 DMIPS performance at 80MHz, the accelerator
implements an instruction prefetch queue and branch cache, which increases program
execution speed from the 64-bit Flash memory. Based on CoreMark benchmark, the
performance achieved thanks to the ART accelerator is equivalent to 0 wait state program
execution from Flash memory at a CPU frequency up to 80 MHz.
3.3
Memory protection unit
The memory protection unit (MPU) is used to manage the CPU accesses to memory to
prevent one task to accidentally corrupt the memory or resources used by any other active
task. This memory area is organized into up to 8 protected areas that can in turn be divided
up into 8 subareas. The protection area sizes are between 32 bytes and the whole 4
gigabytes of addressable memory.
The MPU is especially helpful for applications where some critical or certified code has to be
protected against the misbehavior of other tasks. It is usually managed by an RTOS (realtime operating system). If a program accesses a memory location that is prohibited by the
MPU, the RTOS can detect it and take action. In an RTOS environment, the kernel can
dynamically update the MPU area setting, based on the process to be executed.
The MPU is optional and can be bypassed for applications that do not need it.
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DS10969 Rev 5
STM32L475xx
3.4
Functional overview
Embedded Flash memory
STM32L475xx devices feature up to 1 Mbyte of embedded Flash memory available for
storing programs and data. The Flash memory is divided into two banks allowing readwhile-write operations. This feature allows to perform a read operation from one bank while
an erase or program operation is performed to the other bank. The dual bank boot is also
supported. Each bank contains 256 pages of 2 Kbyte.
Flexible protections can be configured thanks to option bytes:
•
Readout protection (RDP) to protect the whole memory. Three levels are available:
–
Level 0: no readout protection
–
Level 1: memory readout protection: the Flash memory cannot be read from or
written to if either debug features are connected, boot in RAM or bootloader is
selected
–
Level 2: chip readout protection: debug features (Cortex-M4 JTAG and serial
wire), boot in RAM and bootloader selection are disabled (JTAG fuse). This
selection is irreversible.
Table 3. Access status versus readout protection level and execution modes
Area
Debug, boot from RAM or boot
from system memory (loader)
User execution
Protection
level
Read
Write
Erase
Read
Write
Erase
Main
memory
1
Yes
Yes
Yes
No
No
No
2
Yes
Yes
Yes
N/A
N/A
N/A
System
memory
1
Yes
No
No
Yes
No
No
2
Yes
No
No
N/A
N/A
N/A
Option
bytes
1
Yes
Yes
Yes
Yes
Yes
Yes
2
Yes
No
No
N/A
N/A
N/A
No
No
N/A(1)
Backup
registers
SRAM2
(1)
1
Yes
Yes
N/A
2
Yes
Yes
N/A
N/A
N/A
N/A
1
Yes
Yes
Yes(1)
No
No
No(1)
2
Yes
Yes
Yes
N/A
N/A
N/A
1. Erased when RDP change from Level 1 to Level 0.
•
Write protection (WRP): the protected area is protected against erasing and
programming. Two areas per bank can be selected, with 2-Kbyte granularity.
•
Proprietary code readout protection (PCROP): a part of the flash memory can be
protected against read and write from third parties. The protected area is execute-only:
it can only be reached by the STM32 CPU, as an instruction code, while all other
accesses (DMA, debug and CPU data read, write and erase) are strictly prohibited.
One area per bank can be selected, with 64-bit granularity. An additional option bit
(PCROP_RDP) allows to select if the PCROP area is erased or not when the RDP
protection is changed from Level 1 to Level 0.
DS10969 Rev 5
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57
Functional overview
STM32L475xx
The whole non-volatile memory embeds the error correction code (ECC) feature supporting:
3.5
•
single error detection and correction
•
double error detection.
•
The address of the ECC fail can be read in the ECC register
Embedded SRAM
STM32L475xx devices feature up to 128 Kbyte of embedded SRAM. This SRAM is split into
two blocks:
•
96 Kbyte mapped at address 0x2000 0000 (SRAM1)
•
32 Kbyte located at address 0x1000 0000 with hardware parity check (SRAM2).
This block is accessed through the ICode/DCode buses for maximum performance.
These 32 Kbyte SRAM can also be retained in Standby mode.
The SRAM2 can be write-protected with 1 Kbyte granularity.
The memory can be accessed in read/write at CPU clock speed with 0 wait states.
3.6
Firewall
The device embeds a Firewall which protects code sensitive and secure data from any
access performed by a code executed outside of the protected areas.
Each illegal access generates a reset which kills immediately the detected intrusion.
The Firewall main features are the following:
•
Three segments can be protected and defined thanks to the Firewall registers:
–
Code segment (located in Flash or SRAM1 if defined as executable protected
area)
–
Non-volatile data segment (located in Flash)
–
Volatile data segment (located in SRAM1)
•
The start address and the length of each segments are configurable:
–
Code segment: up to 1024 Kbyte with granularity of 256 bytes
–
Non-volatile data segment: up to 1024 Kbyte with granularity of 256 bytes
–
Volatile data segment: up to 96 Kbyte with a granularity of 64 bytes
•
Specific mechanism implemented to open the Firewall to get access to the protected
areas (call gate entry sequence)
•
Volatile data segment can be shared or not with the non-protected code
•
Volatile data segment can be executed or not depending on the Firewall configuration
The Flash readout protection must be set to level 2 in order to reach the expected level of
protection.
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DS10969 Rev 5
STM32L475xx
3.7
Functional overview
Boot modes
At startup, BOOT0 pin and BOOT1 option bit are used to select one of three boot options:
•
Boot from user Flash
•
Boot from system memory
•
Boot from embedded SRAM
The boot loader is located in system memory. It is used to reprogram the Flash memory by
using USART, I2C, SPI, CAN or USB OTG FS in Device mode through DFU (device
firmware upgrade).
3.8
Cyclic redundancy check calculation unit (CRC)
The CRC (cyclic redundancy check) calculation unit is used to get a CRC code using a
configurable generator polynomial value and size.
Among other applications, CRC-based techniques are used to verify data transmission or
storage integrity. In the scope of the EN/IEC 60335-1 standard, they offer a means of
verifying the Flash memory integrity. The CRC calculation unit helps compute a signature of
the software during runtime, to be compared with a reference signature generated at linktime and stored at a given memory location.
3.9
Power supply management
3.9.1
Power supply schemes
•
VDD = 1.71 to 3.6 V: external power supply for I/Os (VDDIO1), the internal regulator and
the system analog such as reset, power management and internal clocks. It is provided
externally through VDD pins.
•
VDDA = 1.62 V (ADCs/COMPs) / 1.8 (DAC/OPAMPs) to 3.6 V: external analog power
supply for ADCs, DAC, OPAMPs, Comparators and Voltage reference buffer. The VDDA
voltage level is independent from the VDD voltage.
•
VDDUSB = 3.0 to 3.6 V: external independent power supply for USB transceivers. The
VDDUSB voltage level is independent from the VDD voltage.
•
VBAT = 1.55 to 3.6 V: power supply for RTC, external clock 32 kHz oscillator and
backup registers (through power switch) when VDD is not present.
Note:
When the functions supplied by VDDA or VDDUSB are not used, these supplies should
preferably be shorted to VDD.
Note:
If these supplies are tied to ground, the I/Os supplied by these power supplies are not 5 V
tolerant (refer to Table 20: Voltage characteristics).
Note:
VDDIOx is the I/Os general purpose digital functions supply. VDDIOx represents VDDIO1, with
VDDIO1 = VDD.
DS10969 Rev 5
19/204
57
Functional overview
STM32L475xx
Figure 2. Power supply overview
VDDA domain
VDDA
VSSA
1 x A/D converters
2 x comparators
2 x D/A converters
1 x operational amplifier
Voltage reference buffer
VDDUSB
VSS
USB transceivers
VDD domain
VDDIO1 I/O ring
VCORE domain
Reset block
Temp. sensor
2 x PLL, HSI, MSI,
HSI48
VSS
VDD
Standby circuitry
(Wakeup logic,
IWDG)
Core
VCORE
SRAM1
SRAM2
Digital
peripherals
Voltage regulator
Low voltage detector
Flash memory
Backup domain
VBAT
LSE crystal 32 K osc
BKP registers
RCC BDCR register
RTC
MSv37694V3
During power-up and power-down phases, the following power sequence requirements
must be respected:
•
When VDD is below 1 V, other power supplies (VDDA, VDDUSB) must remain below VDD
+ 300 mV.
•
When VDD is above 1 V, all power supplies are independent.
During the power-down phase, VDD can temporarily become lower than other supplies only
if the energy provided to the MCU remains below 1 mJ; this allows external decoupling
capacitors to be discharged with different time constants during the power-down transient
phase.
20/204
DS10969 Rev 5
STM32L475xx
Functional overview
Figure 3. Power-up/down sequence
V
3.6
VDDX(1)
VDD
VBOR0
1
0.3
Power-on
Invalid supply area
Operating mode
VDDX < VDD + 300 mV
Power-down
VDDX independent from VDD
time
MSv47490V1
1. VDDX refers to any power supply among VDDA, VDDUSB.
3.9.2
Power supply supervisor
The device has an integrated ultra-low-power brown-out reset (BOR) active in all modes
except Shutdown and ensuring proper operation after power-on and during power down.
The device remains in reset mode when the monitored supply voltage VDD is below a
specified threshold, without the need for an external reset circuit.
The lowest BOR level is 1.71V at power on, and other higher thresholds can be selected
through option bytes.The device features an embedded programmable voltage detector
(PVD) that monitors the VDD power supply and compares it to the VPVD threshold. An
interrupt can be generated when VDD drops below the VPVD threshold and/or when VDD is
higher than the VPVD threshold. The interrupt service routine can then generate a warning
message and/or put the MCU into a safe state. The PVD is enabled by software.
In addition, the device embeds a Peripheral Voltage Monitor which compares the
independent supply voltages VDDA, VDDUSB with a fixed threshold in order to ensure that the
peripheral is in its functional supply range.
DS10969 Rev 5
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57
Functional overview
3.9.3
STM32L475xx
Voltage regulator
Two embedded linear voltage regulators supply most of the digital circuitries: the main
regulator (MR) and the low-power regulator (LPR).
•
The MR is used in the Run and Sleep modes and in the Stop 0 mode.
•
The LPR is used in Low-Power Run, Low-Power Sleep, Stop 1 and Stop 2 modes. It is
also used to supply the 32 Kbyte SRAM2 in Standby with SRAM2 retention.
•
Both regulators are in power-down in Standby and Shutdown modes: the regulator
output is in high impedance, and the kernel circuitry is powered down thus inducing
zero consumption.
The ultralow-power STM32L475xx supports dynamic voltage scaling to optimize its power
consumption in run mode. The voltage from the Main Regulator that supplies the logic
(VCORE) can be adjusted according to the system’s maximum operating frequency.
There are two power consumption ranges:
•
Range 1 with the CPU running at up to 80 MHz.
•
Range 2 with a maximum CPU frequency of 26 MHz. All peripheral clocks are also
limited to 26 MHz.
The VCORE can be supplied by the low-power regulator, the main regulator being switched
off. The system is then in Low-power run mode.
•
3.9.4
Low-power run mode with the CPU running at up to 2 MHz. Peripherals with
independent clock can be clocked by HSI16.
Low-power modes
The ultra-low-power STM32L475xx supports seven low-power modes to achieve the best
compromise between low-power consumption, short startup time, available peripherals and
available wakeup sources.
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DS10969 Rev 5
Mode
Run
LPRun
Sleep
LPSleep
Regulator
(1)
Range 1
Range2
LPR
Range 1
Range 2
LPR
DS10969 Rev 5
SRAM
Clocks
Yes
ON(4)
ON
Any
Yes
ON(4)
ON
Any
except
PLL
No
ON(4)
ON(5)
Any
No
ON(4)
ON(5)
Any
except
PLL
All except OTG_FS, RNG
LSE
LSI
BOR, PVD, PVM
RTC, IWDG
COMPx (x=1,2)
DAC1
OPAMPx (x=1,2)
USARTx (x=1...5)(6)
LPUART1(6)
I2Cx (x=1...3)(7)
LPTIMx (x=1,2)
***
All other peripherals are
frozen.
No
Range 2
Off
ON
All
All except OTG_FS, RNG
Wakeup source
N/A
Consumption(3)
112 µA/MHz
100 µA/MHz
Wakeup time
N/A
All except OTG_FS, RNG
N/A
136 µA/MHz
to Range 1: 4 µs
to Range 2: 64 µs
All
Any interrupt or
event
37 µA/MHz
6 cycles
35 µA/MHz
6 cycles
Any interrupt or
event
40 µA/MHz
6 cycles
Reset pin, all I/Os
BOR, PVD, PVM
RTC, IWDG
COMPx (x=1..2)
USARTx (x=1...5)(6)
LPUART1(6)
I2Cx (x=1...3)(7)
LPTIMx (x=1,2)
OTG_FS(8)
SWPMI1(9)
108 µA
0.7 µs in SRAM
4.5 µs in Flash
All except OTG_FS, RNG
23/204
Functional overview
Flash
Range 1
Stop 0
DMA & Peripherals(2)
CPU
STM32L475xx
Table 4. STM32L475xx modes overview
Mode
Stop 1
DS10969 Rev 5
Stop 2
Regulator
(1)
LPR
LPR
CPU
No
No
Flash
Off
Off
SRAM
ON
ON
Clocks
DMA & Peripherals(2)
Wakeup source
Consumption(3)
Wakeup time
LSE
LSI
BOR, PVD, PVM
RTC, IWDG
COMPx (x=1,2)
DAC1
OPAMPx (x=1,2)
USARTx (x=1...5)(6)
LPUART1(6)
I2Cx (x=1...3)(7)
LPTIMx (x=1,2)
***
All other peripherals are
frozen.
Reset pin, all I/Os
BOR, PVD, PVM
RTC, IWDG
COMPx (x=1..2)
USARTx (x=1...5)(6)
LPUART1(6)
I2Cx (x=1...3)(7)
LPTIMx (x=1,2)
OTG_FS(8)
SWPMI1(9)
6.6 µA w/o RTC
6.9 µA w RTC
4 µs in SRAM
6 µs in Flash
LSE
LSI
BOR, PVD, PVM
RTC, IWDG
COMPx (x=1..2)
I2C3(7)
LPUART1(6)
LPTIM1
***
All other peripherals are
frozen.
Reset pin, all I/Os
BOR, PVD, PVM
RTC, IWDG
COMPx (x=1..2)
I2C3(7)
LPUART1(6)
LPTIM1
1.1 µA w/o RTC
1.4 µA w/RTC
Functional overview
24/204
Table 4. STM32L475xx modes overview (continued)
5 µs in SRAM
7 µs in Flash
STM32L475xx
Mode
Regulator
(1)
CPU
Flash
OFF
Shutdown
OFF
DS10969 Rev 5
Clocks
DMA & Peripherals(2)
LSE
LSI
BOR, RTC, IWDG
***
All other peripherals are
powered off.
***
I/O configuration can be
floating, pull-up or pull-down
Reset pin
5 I/Os (WKUPx)(10)
BOR, RTC, IWDG
LSE
RTC
***
All other peripherals are
powered off.
***
I/O configuration can be
floating, pull-up or pull-down(11)
Reset pin
5 I/Os (WKUPx)(10)
RTC
SRAM2
ON
LPR
Standby
SRAM
Powered
Off
Powered
Off
Off
Off
Powered
Off
Powered
Off
Wakeup source
Consumption(3)
Wakeup time
0.35 µA w/o RTC
0.65 µA w/ RTC
14 µs
0.12 µA w/o RTC
0.42 µA w/ RTC
0.03 µA w/o RTC
0.33 µA w/ RTC
STM32L475xx
Table 4. STM32L475xx modes overview (continued)
256 µs
1. LPR means Main regulator is OFF and Low-power regulator is ON.
2. All peripherals can be active or clock gated to save power consumption.
3. Typical current at VDD = 1.8 V, 25°C. Consumptions values provided running from SRAM, Flash memory Off, 80 MHz in Range 1, 26 MHz in Range 2, 2 MHz in
LPRun/LPSleep.
4. The Flash memory can be put in power-down and its clock can be gated off when executing from SRAM.
5. The SRAM1 and SRAM2 clocks can be gated on or off independently.
6. U(S)ART and LPUART reception is functional in Stop mode, and generates a wakeup interrupt on Start, address match or received frame event.
7. I2C address detection is functional in Stop mode, and generates a wakeup interrupt in case of address match.
8. OTG_FS wakeup by resume from suspend and attach detection protocol event.
9. SWPMI1 wakeup by resume from suspend.
11. I/Os can be configured with internal pull-up, pull-down or floating in Shutdown mode but the configuration is lost when exiting the Shutdown mode.
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Functional overview
10. The I/Os with wakeup from Standby/Shutdown capability are: PA0, PC13, PE6, PA2, PC5.
Functional overview
STM32L475xx
By default, the microcontroller is in Run mode after a system or a power Reset. It is up to the
user to select one of the low-power modes described below:
•
Sleep mode
In Sleep mode, only the CPU is stopped. All peripherals continue to operate and can
wake up the CPU when an interrupt/event occurs.
•
Low-power run mode
This mode is achieved with VCORE supplied by the low-power regulator to minimize the
regulator's operating current. The code can be executed from SRAM or from Flash,
and the CPU frequency is limited to 2 MHz. The peripherals with independent clock can
be clocked by HSI16.
•
Low-power sleep mode
This mode is entered from the low-power run mode. Only the CPU clock is stopped.
When wakeup is triggered by an event or an interrupt, the system reverts to the lowpower run mode.
•
Stop 0, Stop 1 and Stop 2 modes
Stop mode achieves the lowest power consumption while retaining the content of
SRAM and registers. All clocks in the VCORE domain are stopped, the PLL, the MSI
RC, the HSI16 RC and the HSE crystal oscillators are disabled. The LSE or LSI is still
running.
The RTC can remain active (Stop mode with RTC, Stop mode without RTC).
Some peripherals with wakeup capability can enable the HSI16 RC during Stop mode
to detect their wakeup condition.
Three Stop modes are available: Stop 0, Stop 1 and Stop 2 modes. In Stop 2 mode,
most of the VCORE domain is put in a lower leakage mode.
Stop 1 offers the largest number of active peripherals and wakeup sources, a smaller
wakeup time but a higher consumption than Stop 2. In Stop 0 mode, the main regulator
remains ON, allowing a very fast wakeup time but with much higher consumption.
The system clock when exiting from Stop 0, Stop 1 or Stop 2 modes can be either MSI
up to 48 MHz or HSI16, depending on software configuration.
•
Standby mode
The Standby mode is used to achieve the lowest power consumption with BOR. The
internal regulator is switched off so that the VCORE domain is powered off. The PLL, the
MSI RC, the HSI16 RC and the HSE crystal oscillators are also switched off.
The RTC can remain active (Standby mode with RTC, Standby mode without RTC).
The brown-out reset (BOR) always remains active in Standby mode.
The state of each I/O during standby mode can be selected by software: I/O with
internal pull-up, internal pull-down or floating.
After entering Standby mode, SRAM1 and register contents are lost except for registers
in the Backup domain and Standby circuitry. Optionally, SRAM2 can be retained in
Standby mode, supplied by the low-power Regulator (Standby with SRAM2 retention
mode).
The device exits Standby mode when an external reset (NRST pin), an IWDG reset,
WKUP pin event (configurable rising or falling edge), or an RTC event occurs (alarm,
periodic wakeup, timestamp, tamper) or a failure is detected on LSE (CSS on LSE).
The system clock after wakeup is MSI up to 8 MHz.
26/204
DS10969 Rev 5
STM32L475xx
•
Functional overview
Shutdown mode
The Shutdown mode allows to achieve the lowest power consumption. The internal
regulator is switched off so that the VCORE domain is powered off. The PLL, the HSI16,
the MSI, the LSI and the HSE oscillators are also switched off.
The RTC can remain active (Shutdown mode with RTC, Shutdown mode without RTC).
The BOR is not available in Shutdown mode. No power voltage monitoring is possible
in this mode, therefore the switch to Backup domain is not supported.
SRAM1, SRAM2 and register contents are lost except for registers in the Backup
domain.
The device exits Shutdown mode when an external reset (NRST pin), a WKUP pin
event (configurable rising or falling edge), or an RTC event occurs (alarm, periodic
wakeup, timestamp, tamper).
The system clock after wakeup is MSI at 4 MHz.
DS10969 Rev 5
27/204
57
Functional overview
STM32L475xx
Table 5. Functionalities depending on the working mode(1)
-
-
Y
-
Y
-
-
-
-
-
-
-
-
-
-
O(2)
O(2)
O(2)
O(2)
-
-
-
-
-
-
-
-
-
SRAM1 (up to
96 KB)
Y
Y(3)
Y
Y(3)
Y
-
Y
-
-
-
-
-
-
SRAM2 (32 KB)
Y
Y(3)
Y
Y(3)
Y
-
Y
-
O(4)
-
-
-
-
FSMC
O
O
O
O
-
-
-
-
-
-
-
-
-
Quad SPI
O
O
O
O
-
-
-
-
-
-
-
-
-
Backup Registers
Y
Y
Y
Y
Y
-
Y
-
Y
-
Y
-
Y
Brown-out reset
(BOR)
Y
Y
Y
Y
Y
Y
Y
Y
Y
Y
-
-
-
Programmable
Voltage Detector
(PVD)
O
O
O
O
O
O
O
O
-
-
-
-
-
Peripheral Voltage
Monitor (PVMx;
x=1,2,3,4)
O
O
O
O
O
O
O
O
-
-
-
-
-
DMA
O
O
O
O
-
-
-
-
-
-
-
-
-
High Speed Internal
(HSI16)
O
O
O
O
(5)
-
(5)
-
-
-
-
-
-
High Speed External
(HSE)
O
O
O
O
-
-
-
-
-
-
-
-
-
Low Speed Internal
(LSI)
O
O
O
O
O
-
O
-
O
-
-
-
-
Low Speed External
(LSE)
O
O
O
O
O
-
O
-
O
-
O
-
O
Multi-Speed Internal
(MSI)
O
O
O
O
-
-
-
-
-
-
-
-
-
Clock Security
System (CSS)
O
O
O
O
-
-
-
-
-
-
-
-
-
Clock Security
System on LSE
O
O
O
O
O
O
O
O
O
O
-
-
-
RTC / Auto wakeup
O
O
O
O
O
O
O
O
O
O
O
O
O
Number of RTC
Tamper pins
3
3
3
3
3
O
3
O
3
O
3
O
3
Peripheral
CPU
Flash memory (up to
1 MB)
28/204
Run
Sleep
Lowpower
run
Lowpower
sleep
-
DS10969 Rev 5
Wakeup capability
-
Wakeup capability
Standby Shutdown
Wakeup capability
Stop 2
Wakeup capability
Stop 0/1
VBAT
STM32L475xx
Functional overview
Table 5. Functionalities depending on the working mode(1) (continued)
Lowpower
run
Lowpower
sleep
-
-
-
O
-
-
Wakeup capability
Sleep
Wakeup capability
Run
Standby Shutdown
Wakeup capability
Peripheral
Stop 2
Wakeup capability
Stop 0/1
-
-
-
-
-
-
-
-
-
-
-
-
-
VBAT
USB OTG FS
O(8)
O(8)
-
-
USARTx
(x=1,2,3,4,5)
O
O
O
O
O(6) O(6)
Low-power UART
(LPUART)
O
O
O
O
O(6) O(6) O(6) O(6)
-
-
-
-
-
I2Cx (x=1,2)
O
O
O
O
O(7) O(7)
-
-
-
-
-
-
-
O(7)
O(7)
O(7)
-
-
-
-
-
I2C3
O
O
O
O
O(7)
SPIx (x=1,2,3)
O
O
O
O
-
-
-
-
-
-
-
-
-
CAN
O
O
O
O
-
-
-
-
-
-
-
-
-
SDMMC1
O
O
O
O
-
-
-
-
-
-
-
-
-
SWPMI1
O
O
O
O
-
O
-
-
-
-
-
-
-
SAIx (x=1,2)
O
O
O
O
-
-
-
-
-
-
-
-
-
DFSDM1
O
O
O
O
-
-
-
-
-
-
-
-
-
ADCx (x=1,2,3)
O
O
O
O
-
-
-
-
-
-
-
-
-
DAC1
O
O
O
O
O
-
-
-
-
-
-
-
-
VREFBUF
O
O
O
O
O
-
-
-
-
-
-
-
-
OPAMPx (x=1,2)
O
O
O
O
O
-
-
-
-
-
-
-
-
COMPx (x=1,2)
O
O
O
O
O
O
O
O
-
-
-
-
-
Temperature sensor
O
O
O
O
-
-
-
-
-
-
-
-
-
Timers (TIMx)
O
O
O
O
-
-
-
-
-
-
-
-
-
Low-power timer 1
(LPTIM1)
O
O
O
O
O
O
O
O
-
-
-
-
-
Low-power timer 2
(LPTIM2)
O
O
O
O
O
O
-
-
-
-
-
-
-
Independent
watchdog (IWDG)
O
O
O
O
O
O
O
O
O
O
-
-
-
Window watchdog
(WWDG)
O
O
O
O
-
-
-
-
-
-
-
-
-
SysTick timer
O
O
O
O
-
-
-
-
-
-
-
-
-
Touch sensing
controller (TSC)
O
O
O
O
-
-
-
-
-
-
-
-
-
Random number
generator (RNG)
O(8)
O(8)
-
-
-
-
-
-
-
-
-
-
-
DS10969 Rev 5
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57
Functional overview
STM32L475xx
Table 5. Functionalities depending on the working mode(1) (continued)
-
-
CRC calculation unit
O
O
O
O
-
-
-
-
-
-
-
-
-
GPIOs
O
O
O
O
O
O
O
O
(9)
5
pins
(11)
5
pins
-
Peripheral
Run
Sleep
Lowpower
run
Lowpower
sleep
-
(10)
Wakeup capability
-
Wakeup capability
Standby Shutdown
Wakeup capability
Stop 2
Wakeup capability
Stop 0/1
VBAT
(10)
1. Legend: Y = Yes (Enable). O = Optional (Disable by default. Can be enabled by software). - = Not available.
2. The Flash can be configured in power-down mode. By default, it is not in power-down mode.
3. The SRAM clock can be gated on or off.
4. SRAM2 content is preserved when the bit RRS is set in PWR_CR3 register.
5. Some peripherals with wakeup from Stop capability can request HSI16 to be enabled. In this case, HSI16 is woken up by
the peripheral, and only feeds the peripheral which requested it. HSI16 is automatically put off when the peripheral does not
need it anymore.
6. UART and LPUART reception is functional in Stop mode, and generates a wakeup interrupt on Start, address match or
received frame event.
7. I2C address detection is functional in Stop mode, and generates a wakeup interrupt in case of address match.
8. Voltage scaling Range 1 only.
9. I/Os can be configured with internal pull-up, pull-down or floating in Standby mode.
10. The I/Os with wakeup from Standby/Shutdown capability are: PA0, PC13, PE6, PA2, PC5.
11. I/Os can be configured with internal pull-up, pull-down or floating in Shutdown mode but the configuration is lost when
exiting the Shutdown mode.
3.9.5
Reset mode
In order to improve the consumption under reset, the I/Os state under and after reset is
“analog state” (the I/O schmitt trigger is disable). In addition, the internal reset pull-up is
deactivated when the reset source is internal.
3.9.6
VBAT operation
The VBAT pin allows to power the device VBAT domain from an external battery, an external
supercapacitor, or from VDD when no external battery and an external supercapacitor are
present. The VBAT pin supplies the RTC with LSE and the backup registers. Three antitamper detection pins are available in VBAT mode.
VBAT operation is automatically activated when VDD is not present.
An internal VBAT battery charging circuit is embedded and can be activated when VDD is
present.
Note:
30/204
When the microcontroller is supplied from VBAT, external interrupts and RTC alarm/events
do not exit it from VBAT operation.
DS10969 Rev 5
STM32L475xx
3.10
Functional overview
Interconnect matrix
Several peripherals have direct connections between them. This allows autonomous
communication between peripherals, saving CPU resources thus power supply
consumption. In addition, these hardware connections allow fast and predictable latency.
Depending on peripherals, these interconnections can operate in Run, Sleep, low-power run
and sleep, Stop 0, Stop 1 and Stop 2 modes.
Run
Sleep
Low-power run
Low-power sleep
Stop 0 / Stop 1
Stop 2
Table 6. STM32L475xx peripherals interconnect matrix
TIMx
Timers synchronization or chaining
Y
Y
Y
Y
-
-
ADCx
DAC1
DFSDM1
Conversion triggers
Y
Y
Y
Y
-
-
DMA
Memory to memory transfer trigger
Y
Y
Y
Y
-
-
COMPx
Comparator output blanking
Y
Y
Y
Y
-
-
IRTIM
Infrared interface output generation
Y
Y
Y
Y
-
-
TIM1, 8
TIM2, 3
Timer input channel, trigger, break from
analog signals comparison
Y
Y
Y
Y
-
-
LPTIMERx
Low-power timer triggered by analog
signals comparison
Y
Y
Y
Y
Y
(1)
TIM1, 8
Timer triggered by analog watchdog
Y
Y
Y
Y
-
-
TIM16
Timer input channel from RTC events
Y
Y
Y
Y
-
-
LPTIMERx
Low-power timer triggered by RTC alarms
or tampers
Y
Y
Y
Y
Y
(1)
All clocks sources (internal TIM2
and external)
TIM15, 16, 17
Clock source used as input channel for
RC measurement and trimming
Y
Y
Y
Y
-
-
USB
Timer triggered by USB SOF
Y
Y
-
-
-
-
Timer break
Y
Y
Y
Y
-
-
Interconnect source
TIMx
TIM16/TIM17
COMPx
ADCx
RTC
Interconnect
destination
TIM2
CSS
CPU (hard fault)
RAM (parity error)
Flash memory (ECC error)
TIM1,8
COMPx
TIM15,16,17
PVD
DFSDM1 (analog
watchdog, short circuit
detection)
Interconnect action
DS10969 Rev 5
Y
Y
31/204
57
Functional overview
STM32L475xx
Low-power run
Low-power sleep
Stop 0 / Stop 1
Stop 2
GPIO
Sleep
Interconnect source
Run
Table 6. STM32L475xx peripherals interconnect matrix (continued)
TIMx
External trigger
Y
Y
Y
Y
-
-
LPTIMERx
External trigger
Y
Y
Y
Y
Y
(1)
ADCx
DAC1
DFSDM1
Conversion external trigger
Y
Y
Y
Y
-
-
Interconnect
destination
Interconnect action
1. LPTIM1 only.
32/204
DS10969 Rev 5
Y
STM32L475xx
3.11
Functional overview
Clocks and startup
The clock controller (see Figure 4) distributes the clocks coming from different oscillators to
the core and the peripherals. It also manages clock gating for low-power modes and
ensures clock robustness. It features:
•
Clock prescaler: to get the best trade-off between speed and current consumption,
the clock frequency to the CPU and peripherals can be adjusted by a programmable
prescaler
•
Safe clock switching: clock sources can be changed safely on the fly in run mode
through a configuration register.
•
Clock management: to reduce power consumption, the clock controller can stop the
clock to the core, individual peripherals or memory.
•
System clock source: four different clock sources can be used to drive the master
clock SYSCLK:
•
–
4-48 MHz high-speed external crystal or ceramic resonator (HSE), that can supply
a PLL. The HSE can also be configured in bypass mode for an external clock.
–
16 MHz high-speed internal RC oscillator (HSI16), trimmable by software, that can
supply a PLL
–
Multispeed internal RC oscillator (MSI), trimmable by software, able to generate
12 frequencies from 100 kHz to 48 MHz. When a 32.768 kHz clock source is
available in the system (LSE), the MSI frequency can be automatically trimmed by
hardware to reach better than ±0.25% accuracy. In this mode the MSI can feed the
USB device, saving the need of an external high-speed crystal (HSE). The MSI
can supply a PLL.
–
System PLL which can be fed by HSE, HSI16 or MSI, with a maximum frequency
at 80 MHz.
Auxiliary clock source: two ultralow-power clock sources that can be used to drive
the real-time clock:
–
32.768 kHz low-speed external crystal (LSE), supporting four drive capability
modes. The LSE can also be configured in bypass mode for an external clock.
–
32 kHz low-speed internal RC (LSI), also used to drive the independent watchdog.
The LSI clock accuracy is ±5% accuracy.
•
Peripheral clock sources: Several peripherals (USB, SDMMC, RNG, SAI, USARTs,
I2Cs, LPTimers, ADC, SWPMI) have their own independent clock whatever the system
clock. Three PLLs, each having three independent outputs allowing the highest
flexibility, can generate independent clocks for the ADC, the USB/SDMMC/RNG and
the two SAIs.
•
Startup clock: after reset, the microcontroller restarts by default with an internal 4 MHz
clock (MSI). The prescaler ratio and clock source can be changed by the application
program as soon as the code execution starts.
•
Clock security system (CSS): this feature can be enabled by software. If a HSE clock
failure occurs, the master clock is automatically switched to HSI16 and a software
DS10969 Rev 5
33/204
57
Functional overview
STM32L475xx
interrupt is generated if enabled. LSE failure can also be detected and generated an
interrupt.
•
Clock-out capability:
–
MCO: microcontroller clock output: it outputs one of the internal clocks for
external use by the application. Low frequency clocks (LSI, LSE) are available
down to Stop 1 low power state.
–
LSCO: low speed clock output: it outputs LSI or LSE in all low-power modes
down to Standby mode. LSE can also be output on LSCO in Shutdown mode.
LSCO is not available in VBAT mode.
Several prescalers allow to configure the AHB frequency, the high speed APB (APB2) and
the low speed APB (APB1) domains. The maximum frequency of the AHB and the APB
domains is 80 MHz.
34/204
DS10969 Rev 5
STM32L475xx
Functional overview
Figure 4. Clock tree
to IWDG
LSI RC 32 kHz
LSCO
to RTC
OSC32_OUT
LSE OSC
32.768 kHz
/32
OSC32_IN
LSE
LSI
HSE
MCO
/ 1→16
to PWR
SYSCLK
HSI16
OSC_OUT
HSE OSC
4-48 MHz
OSC_IN
to AHB bus, core, memory and DMA
Clock
source
control
MSI
PLLCLK
AHB
PRESC
/ 1,2,..512
HCLK
HSE
Clock
detector
FCLK Cortex free running clock
to Cortex system timer
/8
MSI
SYSCLK
APB1
PRESC
/ 1,2,4,8,16
HSI16
PCLK1
to APB1 peripherals
x1 or x2
HSI RC
16 MHz
LSE
HSI16
SYSCLK
to USARTx
x=2..5
to LPUART1
HSI16
SYSCLK
MSI RC
100 kHz – 48 MHz
to TIMx
x=2..7
to I2Cx
x=1,2,3
LSI
LSE
HSI16
to LPTIMx
x=1,2
HSI16
to SWPMI
MSI
PLL
/M
VCO FVCO / P
APB2
PRESC
/ 1,2,4,8,16
HSE
PLLSAI3CLK
/Q
PLL48M1CLK
/R
PLLCLK
PLLSAI1
VCO FVCO / P
HSI16
PLL48M2CLK
/R
PLLADC1CLK
to TIMx
x=1,8,15,16,17
LSE
HSI16
SYSCLK
MSI
to ADC
PLLSAI2CLK
/Q
/R
to
USART1
48 MHz clock to USB, RNG, SDMMC
SYSCLK
PLLSAI2
VCO FVCO / P
to APB2 peripherals
x1 or x2
PLLSAI1CLK
/Q
PCLK2
to SAI1
PLLADC2CLK
SAI1_EXTCLK
to SAI2
SAI2_EXTCLK
MSv37695V2
DS10969 Rev 5
35/204
57
Functional overview
3.12
STM32L475xx
General-purpose inputs/outputs (GPIOs)
Each of the GPIO pins can be configured by software as output (push-pull or open-drain), as
input (with or without pull-up or pull-down) or as peripheral alternate function. Most of the
GPIO pins are shared with digital or analog alternate functions. Fast I/O toggling can be
achieved thanks to their mapping on the AHB2 bus.
The I/Os alternate function configuration can be locked if needed following a specific
sequence in order to avoid spurious writing to the I/Os registers.
3.13
Direct memory access controller (DMA)
The device embeds 2 DMAs. Refer to Table 7: DMA implementation for the features
implementation.
Direct memory access (DMA) is used in order to provide high-speed data transfer between
peripherals and memory as well as memory to memory. Data can be quickly moved by DMA
without any CPU actions. This keeps CPU resources free for other operations.
The two DMA controllers have 14 channels in total, each dedicated to managing memory
access requests from one or more peripherals. Each has an arbiter for handling the priority
between DMA requests.
The DMA supports:
•
14 independently configurable channels (requests)
•
Each channel is connected to dedicated hardware DMA requests, software trigger is
also supported on each channel. This configuration is done by software.
•
Priorities between requests from channels of one DMA are software programmable (4
levels consisting of very high, high, medium, low) or hardware in case of equality
(request 1 has priority over request 2, etc.)
•
Independent source and destination transfer size (byte, half word, word), emulating
packing and unpacking. Source/destination addresses must be aligned on the data
size.
•
Support for circular buffer management
•
3 event flags (DMA Half Transfer, DMA Transfer complete and DMA Transfer Error)
logically ORed together in a single interrupt request for each channel
•
Memory-to-memory transfer
•
Peripheral-to-memory and memory-to-peripheral, and peripheral-to-peripheral
transfers
•
Access to Flash, SRAM, APB and AHB peripherals as source and destination
•
Programmable number of data to be transferred: up to 65536.
Table 7. DMA implementation
36/204
DMA features
DMA1
DMA2
Number of regular channels
7
7
DS10969 Rev 5
STM32L475xx
Functional overview
3.14
Interrupts and events
3.14.1
Nested vectored interrupt controller (NVIC)
The devices embed a nested vectored interrupt controller able to manage 16 priority levels,
and handle up to 80 maskable interrupt channels plus the 16 interrupt lines of the Cortex®M4.
The NVIC benefits are the following:
•
Closely coupled NVIC gives low latency interrupt processing
•
Interrupt entry vector table address passed directly to the core
•
Allows early processing of interrupts
•
Processing of late arriving higher priority interrupts
•
Support for tail chaining
•
Processor state automatically saved on interrupt entry, and restored on interrupt exit,
with no instruction overhead
The NVIC hardware block provides flexible interrupt management features with minimal
interrupt latency.
3.14.2
Extended interrupt/event controller (EXTI)
The extended interrupt/event controller consists of 39 edge detector lines used to generate
interrupt/event requests and wake-up the system from Stop mode. Each external line can be
independently configured to select the trigger event (rising edge, falling edge, both) and can
be masked independently. A pending register maintains the status of the interrupt requests.
The internal lines are connected to peripherals with wakeup from Stop mode capability. The
EXTI can detect an external line with a pulse width shorter than the internal clock period. Up
to 82 GPIOs can be connected to the 16 external interrupt lines.
DS10969 Rev 5
37/204
57
Functional overview
3.15
STM32L475xx
Analog to digital converter (ADC)
The device embeds 3 successive approximation analog-to-digital converters with the
following features:
•
12-bit native resolution, with built-in calibration
•
5.33 Msps maximum conversion rate with full resolution
Down to 18.75 ns sampling time
–
Increased conversion rate for lower resolution (up to 8.88 Msps for 6-bit
resolution)
•
Up to 16 external channels, some of them shared between ADC1 and ADC2, or ADC1,
ADC2 and ADC3.
•
5 internal channels: internal reference voltage, temperature sensor, VBAT/3,
DAC1_OUT1 and DAC1_OUT2.
•
One external reference pin is available on some package, allowing the input voltage
range to be independent from the power supply
•
Single-ended and differential mode inputs
•
Low-power design
•
3.15.1
–
–
Capable of low-current operation at low conversion rate (consumption decreases
linearly with speed)
–
Dual clock domain architecture: ADC speed independent from CPU frequency
Highly versatile digital interface
–
Single-shot or continuous/discontinuous sequencer-based scan mode: 2 groups
of analog signals conversions can be programmed to differentiate background and
high-priority real-time conversions
–
Handles two ADC converters for dual mode operation (simultaneous or
interleaved sampling modes)
–
Each ADC support multiple trigger inputs for synchronization with on-chip timers
and external signals
–
Results stored into 3 data register or in RAM with DMA controller support
–
Data pre-processing: left/right alignment and per channel offset compensation
–
Built-in oversampling unit for enhanced SNR
–
Channel-wise programmable sampling time
–
Three analog watchdog for automatic voltage monitoring, generating interrupts
and trigger for selected timers
–
Hardware assistant to prepare the context of the injected channels to allow fast
context switching
Temperature sensor
The temperature sensor (TS) generates a voltage VTS that varies linearly with temperature.
The temperature sensor is internally connected to the ADC1_IN17 and ADC3_IN17 input
channels which is used to convert the sensor output voltage into a digital value.
The sensor provides good linearity but it has to be calibrated to obtain good overall
accuracy of the temperature measurement. As the offset of the temperature sensor varies
from chip to chip due to process variation, the uncalibrated internal temperature sensor is
suitable for applications that detect temperature changes only.
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To improve the accuracy of the temperature sensor measurement, each device is
individually factory-calibrated by ST. The temperature sensor factory calibration data are
stored by ST in the system memory area, accessible in read-only mode.
Table 8. Temperature sensor calibration values
3.15.2
Calibration value name
Description
Memory address
TS_CAL1
TS ADC raw data acquired at a
temperature of 30 °C (± 5 °C),
VDDA = VREF+ = 3.0 V (± 10 mV)
0x1FFF 75A8 - 0x1FFF 75A9
TS_CAL2
TS ADC raw data acquired at a
temperature of 110 °C (± 5 °C),
VDDA = VREF+ = 3.0 V (± 10 mV)
0x1FFF 75CA - 0x1FFF 75CB
Internal voltage reference (VREFINT)
The internal voltage reference (VREFINT) provides a stable (bandgap) voltage output for
the ADC and Comparators. VREFINT is internally connected to the ADC1_IN0 input
channel. The precise voltage of VREFINT is individually measured for each part by ST
during production test and stored in the system memory area. It is accessible in read-only
mode.
Table 9. Internal voltage reference calibration values
3.15.3
Calibration value name
Description
Memory address
VREFINT
Raw data acquired at a
temperature of 30 °C (± 5 °C),
VDDA = VREF+ = 3.0 V (± 10 mV)
0x1FFF 75AA - 0x1FFF 75AB
VBAT battery voltage monitoring
This embedded hardware feature allows the application to measure the VBAT battery voltage
using the internal ADC channel ADC1_IN18 or ADC3_IN18. As the VBAT voltage may be
higher than VDDA, and thus outside the ADC input range, the VBAT pin is internally
connected to a bridge divider by 3. As a consequence, the converted digital value is one
third the VBAT voltage.
3.16
Digital to analog converter (DAC)
Two 12-bit buffered DAC channels can be used to convert digital signals into analog voltage
signal outputs. The chosen design structure is composed of integrated resistor strings and
an amplifier in inverting configuration.
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This digital interface supports the following features:
•
Up to two DAC output channels
•
8-bit or 12-bit output mode
•
Buffer offset calibration (factory and user trimming)
•
Left or right data alignment in 12-bit mode
•
Synchronized update capability
•
Noise-wave generation
•
Triangular-wave generation
•
Dual DAC channel independent or simultaneous conversions
•
DMA capability for each channel
•
External triggers for conversion
•
Sample and hold low-power mode, with internal or external capacitor
The DAC channels are triggered through the timer update outputs that are also connected
to different DMA channels.
3.17
Voltage reference buffer (VREFBUF)
The STM32L475xx devices embed an voltage reference buffer which can be used as
voltage reference for ADCs, DAC and also as voltage reference for external components
through the VREF+ pin.
The internal voltage reference buffer supports two voltages:
•
2.048 V
•
2.5 V
An external voltage reference can be provided through the VREF+ pin when the internal
voltage reference buffer is off.
The VREF+ pin is double-bonded with VDDA on some packages. In these packages the
internal voltage reference buffer is not available.
Figure 5. Voltage reference buffer
VREFBUF
VDDA
Bandgap
+
DAC, ADC
VREF+
Low frequency
cut-off capacitor
100 nF
MSv40197V1
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Functional overview
Comparators (COMP)
The STM32L475xx devices embed two rail-to-rail comparators with programmable
reference voltage (internal or external), hysteresis and speed (low speed for low-power) and
with selectable output polarity.
The reference voltage can be one of the following:
•
External I/O
•
DAC output channels
•
Internal reference voltage or submultiple (1/4, 1/2, 3/4).
All comparators can wake up from Stop mode, generate interrupts and breaks for the timers
and can be also combined into a window comparator.
3.19
Operational amplifier (OPAMP)
The STM32L475xx embeds two operational amplifiers with external or internal follower
routing and PGA capability.
The operational amplifier features:
3.20
•
Low input bias current
•
Low offset voltage
•
Low-power mode
•
Rail-to-rail input
Touch sensing controller (TSC)
The touch sensing controller provides a simple solution for adding capacitive sensing
functionality to any application. Capacitive sensing technology is able to detect finger
presence near an electrode which is protected from direct touch by a dielectric (glass,
plastic, ...). The capacitive variation introduced by the finger (or any conductive object) is
measured using a proven implementation based on a surface charge transfer acquisition
principle.
The touch sensing controller is fully supported by the STMTouch touch sensing firmware
library which is free to use and allows touch sensing functionality to be implemented reliably
in the end application.
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The main features of the touch sensing controller are the following:
•
Proven and robust surface charge transfer acquisition principle
•
Supports up to 21 capacitive sensing channels
•
Up to 3 capacitive sensing channels can be acquired in parallel offering a very good
response time
•
Spread spectrum feature to improve system robustness in noisy environments
•
Full hardware management of the charge transfer acquisition sequence
•
Programmable charge transfer frequency
•
Programmable sampling capacitor I/O pin
•
Programmable channel I/O pin
•
Programmable max count value to avoid long acquisition when a channel is faulty
•
Dedicated end of acquisition and max count error flags with interrupt capability
•
One sampling capacitor for up to 3 capacitive sensing channels to reduce the system
components
•
Compatible with proximity, touchkey, linear and rotary touch sensor implementation
•
Designed to operate with STMTouch touch sensing firmware library
Note:
The number of capacitive sensing channels is dependent on the size of the packages and
subject to I/O availability.
3.21
Digital filter for Sigma-Delta Modulators (DFSDM)
The device embeds one DFSDM with 4 digital filters modules and 8 external input serial
channels (transceivers) or alternately 8 internal parallel inputs support.
The DFSDM peripheral is dedicated to interface the external Σ∆ modulators to
microcontroller and then to perform digital filtering of the received data streams (which
represent analog value on Σ∆ modulators inputs). DFSDM can also interface PDM (Pulse
Density Modulation) microphones and perform PDM to PCM conversion and filtering in
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hardware. DFSDM features optional parallel data stream inputs from microcontrollers
memory (through DMA/CPU transfers into DFSDM).
DFSDM transceivers support several serial interface formats (to support various Σ∆
modulators). DFSDM digital filter modules perform digital processing according user
selected filter parameters with up to 24-bit final ADC resolution.
The DFSDM peripheral supports:
•
•
8 multiplexed input digital serial channels:
–
configurable SPI interface to connect various SD modulator(s)
–
configurable Manchester coded 1 wire interface support
–
PDM (Pulse Density Modulation) microphone input support
–
maximum input clock frequency up to 20 MHz (10 MHz for Manchester coding)
–
clock output for SD modulator(s): 0..20 MHz
alternative inputs from 8 internal digital parallel channels (up to 16 bit input resolution):
–
•
internal sources: device memory data streams (DMA)
4 digital filter modules with adjustable digital signal processing:
–
Sincx filter: filter order/type (1..5), oversampling ratio (up to 1..1024)
–
integrator: oversampling ratio (1..256)
•
up to 24-bit output data resolution, signed output data format
•
automatic data offset correction (offset stored in register by user)
•
continuous or single conversion
•
start-of-conversion triggered by:
•
•
–
software trigger
–
internal timers
–
external events
–
start-of-conversion synchronously with first digital filter module (DFSDM1_FLT0)
analog watchdog feature:
–
low value and high value data threshold registers
–
dedicated configurable Sincx digital filter (order = 1..3, oversampling ratio = 1..32)
–
input from final output data or from selected input digital serial channels
–
continuous monitoring independently from standard conversion
short circuit detector to detect saturated analog input values (bottom and top range):
–
up to 8-bit counter to detect 1..256 consecutive 0’s or 1’s on serial data stream
–
monitoring continuously each input serial channel
•
break signal generation on analog watchdog event or on short circuit detector event
•
extremes detector:
–
storage of minimum and maximum values of final conversion data
–
refreshed by software
•
DMA capability to read the final conversion data
•
interrupts: end of conversion, overrun, analog watchdog, short circuit, input serial
channel clock absence
•
“regular” or “injected” conversions:
–
“regular” conversions can be requested at any time or even in continuous mode
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without having any impact on the timing of “injected” conversions
–
“injected” conversions for precise timing and with high conversion priority
Table 10. DFSDM1 implementation
DFSDM features
DFSDM1
Number of channels
8
Number of filters
4
Input from internal ADC
-
Supported trigger sources
3.22
10
Pulses skipper
-
ID registers support
-
Random number generator (RNG)
All devices embed an RNG that delivers 32-bit random numbers generated by an integrated
analog circuit.
3.23
Timers and watchdogs
The STM32L475xx includes two advanced control timers, up to nine general-purpose
timers, two basic timers, two low-power timers, two watchdog timers and a SysTick timer.
The table below compares the features of the advanced control, general purpose and basic
timers.
Table 11. Timer feature comparison
Timer type
Timer
Counter
resolution
Counter
type
Prescaler
factor
DMA
request
generation
Capture/
compare
channels
Complementary
outputs
Advanced
control
TIM1, TIM8
16-bit
Up, down,
Up/down
Any integer
between 1
and 65536
Yes
4
3
Generalpurpose
TIM2, TIM5
32-bit
Up, down,
Up/down
Any integer
between 1
and 65536
Yes
4
No
Generalpurpose
TIM3, TIM4
16-bit
Up, down,
Up/down
Any integer
between 1
and 65536
Yes
4
No
Generalpurpose
TIM15
16-bit
Up
Any integer
between 1
and 65536
Yes
2
1
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Table 11. Timer feature comparison (continued)
Timer type
Timer
Counter
resolution
Counter
type
Prescaler
factor
DMA
request
generation
Capture/
compare
channels
Complementary
outputs
Generalpurpose
TIM16, TIM17
16-bit
Up
Any integer
between 1
and 65536
Yes
1
1
Basic
TIM6, TIM7
16-bit
Up
Any integer
between 1
and 65536
Yes
0
No
3.23.1
Advanced-control timer (TIM1, TIM8)
The advanced-control timer can each be seen as a three-phase PWM multiplexed on 6
channels. They have complementary PWM outputs with programmable inserted deadtimes. They can also be seen as complete general-purpose timers. The 4 independent
channels can be used for:
•
Input capture
•
Output compare
•
PWM generation (edge or center-aligned modes) with full modulation capability (0100%)
•
One-pulse mode output
In debug mode, the advanced-control timer counter can be frozen and the PWM outputs
disabled to turn off any power switches driven by these outputs.
Many features are shared with those of the general-purpose TIMx timers (described in
Section 3.23.2) using the same architecture, so the advanced-control timers can work
together with the TIMx timers via the Timer Link feature for synchronization or event
chaining.
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3.23.2
STM32L475xx
General-purpose timers (TIM2, TIM3, TIM4, TIM5, TIM15, TIM16,
TIM17)
There are up to seven synchronizable general-purpose timers embedded in the
STM32L475xx (see Table 11 for differences). Each general-purpose timer can be used to
generate PWM outputs, or act as a simple time base.
•
TIM2, TIM3, TIM4 and TIM5
They are full-featured general-purpose timers:
–
TIM2 and TIM5 have a 32-bit auto-reload up/downcounter and 32-bit prescaler
–
TIM3 and TIM4 have 16-bit auto-reload up/downcounter and 16-bit prescaler.
These timers feature 4 independent channels for input capture/output compare, PWM
or one-pulse mode output. They can work together, or with the other general-purpose
timers via the Timer Link feature for synchronization or event chaining.
The counters can be frozen in debug mode.
All have independent DMA request generation and support quadrature encoders.
•
TIM15, 16 and 17
They are general-purpose timers with mid-range features:
They have 16-bit auto-reload upcounters and 16-bit prescalers.
–
TIM15 has 2 channels and 1 complementary channel
–
TIM16 and TIM17 have 1 channel and 1 complementary channel
All channels can be used for input capture/output compare, PWM or one-pulse mode
output.
The timers can work together via the Timer Link feature for synchronization or event
chaining. The timers have independent DMA request generation.
The counters can be frozen in debug mode.
3.23.3
Basic timers (TIM6 and TIM7)
The basic timers are mainly used for DAC trigger generation. They can also be used as
generic 16-bit timebases.
3.23.4
Low-power timer (LPTIM1 and LPTIM2)
The devices embed two low-power timers. These timers have an independent clock and are
running in Stop mode if they are clocked by LSE, LSI or an external clock. They are able to
wakeup the system from Stop mode.
LPTIM1 is active in Stop 0, Stop 1 and Stop 2 modes.
LPTIM2 is active in Stop 0 and Stop 1 mode.
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This low-power timer supports the following features:
3.23.5
•
16-bit up counter with 16-bit autoreload register
•
16-bit compare register
•
Configurable output: pulse, PWM
•
Continuous/ one shot mode
•
Selectable software/hardware input trigger
•
Selectable clock source
–
Internal clock sources: LSE, LSI, HSI16 or APB clock
–
External clock source over LPTIM input (working even with no internal clock
source running, used by pulse counter application).
•
Programmable digital glitch filter
•
Encoder mode (LPTIM1 only)
Infrared interface (IRTIM)
The STM32L475xx includes one infrared interface (IRTIM). It can be used with an infrared
LED to perform remote control functions. It uses TIM16 and TIM17 output channels to
generate output signal waveforms on IR_OUT pin.
3.23.6
Independent watchdog (IWDG)
The independent watchdog is based on a 12-bit downcounter and 8-bit prescaler. It is
clocked from an independent 32 kHz internal RC (LSI) and as it operates independently
from the main clock, it can operate in Stop and Standby modes. It can be used either as a
watchdog to reset the device when a problem occurs, or as a free running timer for
application timeout management. It is hardware or software configurable through the option
bytes. The counter can be frozen in debug mode.
3.23.7
System window watchdog (WWDG)
The window watchdog is based on a 7-bit downcounter that can be set as free running. It
can be used as a watchdog to reset the device when a problem occurs. It is clocked from
the main clock. It has an early warning interrupt capability and the counter can be frozen in
debug mode.
3.23.8
SysTick timer
This timer is dedicated to real-time operating systems, but could also be used as a standard
down counter. It features:
•
A 24-bit down counter
•
Autoreload capability
•
Maskable system interrupt generation when the counter reaches 0.
•
Programmable clock source
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3.24
STM32L475xx
Real-time clock (RTC) and backup registers
The RTC is an independent BCD timer/counter. It supports the following features:
•
Calendar with subsecond, seconds, minutes, hours (12 or 24 format), week day, date,
month, year, in BCD (binary-coded decimal) format.
•
Automatic correction for 28, 29 (leap year), 30, and 31 days of the month.
•
Two programmable alarms.
•
On-the-fly correction from 1 to 32767 RTC clock pulses. This can be used to
synchronize it with a master clock.
•
Reference clock detection: a more precise second source clock (50 or 60 Hz) can be
used to enhance the calendar precision.
•
Digital calibration circuit with 0.95 ppm resolution, to compensate for quartz crystal
inaccuracy.
•
Three anti-tamper detection pins with programmable filter.
•
Timestamp feature which can be used to save the calendar content. This function can
be triggered by an event on the timestamp pin, or by a tamper event, or by a switch to
VBAT mode.
•
17-bit auto-reload wakeup timer (WUT) for periodic events with programmable
resolution and period.
The RTC and the 32 backup registers are supplied through a switch that takes power either
from the VDD supply when present or from the VBAT pin.
The backup registers are 32-bit registers used to store 128 bytes of user application data
when VDD power is not present. They are not reset by a system or power reset, or when the
device wakes up from Standby or Shutdown mode.
The RTC clock sources can be:
•
A 32.768 kHz external crystal (LSE)
•
An external resonator or oscillator (LSE)
•
The internal low power RC oscillator (LSI, with typical frequency of 32 kHz)
•
The high-speed external clock (HSE) divided by 32.
The RTC is functional in VBAT mode and in all low-power modes when it is clocked by the
LSE. When clocked by the LSI, the RTC is not functional in VBAT mode, but is functional in
all low-power modes except Shutdown mode.
All RTC events (Alarm, WakeUp Timer, Timestamp or Tamper) can generate an interrupt
and wakeup the device from the low-power modes.
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3.25
Functional overview
Inter-integrated circuit interface (I2C)
The device embeds three I2C. Refer to Table 12: I2C implementation for the features
implementation.
The I2C bus interface handles communications between the microcontroller and the serial
I2C bus. It controls all I2C bus-specific sequencing, protocol, arbitration and timing.
The I2C peripheral supports:
•
•
I2C-bus specification and user manual rev. 5 compatibility:
–
Slave and master modes, multimaster capability
–
Standard-mode (Sm), with a bitrate up to 100 kbit/s
–
Fast-mode (Fm), with a bitrate up to 400 kbit/s
–
Fast-mode Plus (Fm+), with a bitrate up to 1 Mbit/s and 20 mA output drive I/Os
–
7-bit and 10-bit addressing mode, multiple 7-bit slave addresses
–
Programmable setup and hold times
–
Optional clock stretching
System Management Bus (SMBus) specification rev 2.0 compatibility:
–
Hardware PEC (Packet Error Checking) generation and verification with ACK
control
–
Address resolution protocol (ARP) support
–
SMBus alert
•
Power System Management Protocol (PMBusTM) specification rev 1.1 compatibility
•
Independent clock: a choice of independent clock sources allowing the I2C
communication speed to be independent from the PCLK reprogramming. Refer to
Figure 4: Clock tree.
•
Wakeup from Stop mode on address match
•
Programmable analog and digital noise filters
•
1-byte buffer with DMA capability
Table 12. I2C implementation
I2C features(1)
I2C1
I2C2
I2C3
Standard-mode (up to 100 kbit/s)
X
X
X
Fast-mode (up to 400 kbit/s)
X
X
X
Fast-mode Plus with 20mA output drive I/Os (up to 1 Mbit/s)
X
X
X
Programmable analog and digital noise filters
X
X
X
SMBus/PMBus hardware support
X
X
X
Independent clock
X
X
X
Wakeup from Stop 0 / Stop 1 mode on address match
X
X
X
Wakeup from Stop 2 mode on address match
-
-
X
1. X: supported
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3.26
STM32L475xx
Universal synchronous/asynchronous receiver transmitter
(USART)
The STM32L475xx devices have three embedded universal synchronous receiver
transmitters (USART1, USART2 and USART3) and two universal asynchronous receiver
transmitters (UART4, UART5).
These interfaces provide asynchronous communication, IrDA SIR ENDEC support,
multiprocessor communication mode, single-wire half-duplex communication mode and
have LIN Master/Slave capability. They provide hardware management of the CTS and RTS
signals, and RS485 Driver Enable. They are able to communicate at speeds of up to
10Mbit/s.
USART1, USART2 and USART3 also provide Smart Card mode (ISO 7816 compliant) and
SPI-like communication capability.
All USART have a clock domain independent from the CPU clock, allowing the USARTx
(x=1,2,3,4,5) to wake up the MCU from Stop mode using baudrates up to 204 Kbaud. The
wake up events from Stop mode are programmable and can be:
•
Start bit detection
•
Any received data frame
•
A specific programmed data frame
All USART interfaces can be served by the DMA controller.
Table 13. STM32L475xx USART/UART/LPUART features
USART modes/features(1)
USART1 USART2 USART3
UART4
UART5
LPUART1
Hardware flow control for modem
X
X
X
X
X
X
Continuous communication using DMA
X
X
X
X
X
X
Multiprocessor communication
X
X
X
X
X
X
Synchronous mode
X
X
X
-
-
-
Smartcard mode
X
X
X
-
-
-
Single-wire half-duplex communication
X
X
X
X
X
X
IrDA SIR ENDEC block
X
X
X
X
X
-
LIN mode
X
X
X
X
X
-
Dual clock domain
X
X
X
X
X
X
Wakeup from Stop 0 / Stop 1 modes
X
X
X
X
X
X
Wakeup from Stop 2 mode
-
-
-
-
-
X
Receiver timeout interrupt
X
X
X
X
X
-
Modbus communication
X
X
X
X
X
-
Auto baud rate detection
Driver Enable
X (4 modes)
X
X
LPUART/USART data length
X
7, 8 and 9 bits
1. X = supported.
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STM32L475xx
3.27
Functional overview
Low-power universal asynchronous receiver transmitter
(LPUART)
The device embeds one Low-Power UART. The LPUART supports asynchronous serial
communication with minimum power consumption. It supports half duplex single wire
communication and modem operations (CTS/RTS). It allows multiprocessor
communication.
The LPUART has a clock domain independent from the CPU clock, and can wakeup the
system from Stop mode using baudrates up to 220 Kbaud. The wake up events from Stop
mode are programmable and can be:
•
Start bit detection
•
Any received data frame
•
A specific programmed data frame
Only a 32.768 kHz clock (LSE) is needed to allow LPUART communication up to 9600
baud. Therefore, even in Stop mode, the LPUART can wait for an incoming frame while
having an extremely low energy consumption. Higher speed clock can be used to reach
higher baudrates.
LPUART interface can be served by the DMA controller.
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3.28
STM32L475xx
Serial peripheral interface (SPI)
Three SPI interfaces allow communication up to 40 Mbits/s in master and up to 24 Mbits/s
slave modes, in half-duplex, full-duplex and simplex modes. The 3-bit prescaler gives 8
master mode frequencies and the frame size is configurable from 4 bits to 16 bits. The SPI
interfaces support NSS pulse mode, TI mode and Hardware CRC calculation.
All SPI interfaces can be served by the DMA controller.
3.29
Serial audio interfaces (SAI)
The device embeds 2 SAI. Refer to Table 14: SAI implementation for the features
implementation. The SAI bus interface handles communications between the
microcontroller and the serial audio protocol.
The SAI peripheral supports:
•
Two independent audio sub-blocks which can be transmitters or receivers with their
respective FIFO.
•
8-word integrated FIFOs for each audio sub-block.
•
Synchronous or asynchronous mode between the audio sub-blocks.
•
Master or slave configuration independent for both audio sub-blocks.
•
Clock generator for each audio block to target independent audio frequency sampling
when both audio sub-blocks are configured in master mode.
•
Data size configurable: 8-, 10-, 16-, 20-, 24-, 32-bit.
•
Peripheral with large configurability and flexibility allowing to target as example the
following audio protocol: I2S, LSB or MSB-justified, PCM/DSP, TDM, AC’97 and SPDIF
out.
•
Up to 16 slots available with configurable size and with the possibility to select which
ones are active in the audio frame.
•
Number of bits by frame may be configurable.
•
Frame synchronization active level configurable (offset, bit length, level).
•
First active bit position in the slot is configurable.
•
LSB first or MSB first for data transfer.
•
Mute mode.
•
Stereo/Mono audio frame capability.
•
Communication clock strobing edge configurable (SCK).
•
Error flags with associated interrupts if enabled respectively.
•
•
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–
Overrun and underrun detection.
–
Anticipated frame synchronization signal detection in slave mode.
–
Late frame synchronization signal detection in slave mode.
–
Codec not ready for the AC’97 mode in reception.
Interruption sources when enabled:
–
Errors.
–
FIFO requests.
DMA interface with 2 dedicated channels to handle access to the dedicated integrated
FIFO of each SAI audio sub-block.
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Functional overview
Table 14. SAI implementation
SAI features(1)
SAI1
SAI2
I2S, LSB or MSB-justified, PCM/DSP, TDM, AC’97
X
X
Mute mode
X
X
Stereo/Mono audio frame capability.
X
X
16 slots
X
X
Data size configurable: 8-, 10-, 16-, 20-, 24-, 32-bit
X
X
X (8 Word)
X (8 Word)
X
X
FIFO Size
SPDIF
1. X: supported
3.30
Single wire protocol master interface (SWPMI)
The Single wire protocol master interface (SWPMI) is the master interface corresponding to
the Contactless Frontend (CLF) defined in the ETSI TS 102 613 technical specification. The
main features are:
•
full-duplex communication mode
•
automatic SWP bus state management (active, suspend, resume)
•
configurable bitrate up to 2 Mbit/s
•
automatic SOF, EOF and CRC handling
SWPMI can be served by the DMA controller.
3.31
Controller area network (CAN)
The CAN is compliant with specifications 2.0A and B (active) with a bit rate up to 1 Mbit/s. It
can receive and transmit standard frames with 11-bit identifiers as well as extended frames
with 29-bit identifiers. It has three transmit mailboxes, two receive FIFOs with 3 stages and
14 scalable filter banks.
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The CAN peripheral supports:
•
Supports CAN protocol version 2.0 A, B Active
•
Bit rates up to 1 Mbit/s
•
Transmission
•
•
•
3.32
–
Three transmit mailboxes
–
Configurable transmit priority
Reception
–
Two receive FIFOs with three stages
–
14 Scalable filter banks
–
Identifier list feature
–
Configurable FIFO overrun
Time-triggered communication option
–
Disable automatic retransmission mode
–
16-bit free running timer
–
Time Stamp sent in last two data bytes
Management
–
Maskable interrupts
–
Software-efficient mailbox mapping at a unique address space
Secure digital input/output and MultiMediaCards Interface
(SDMMC)
The card host interface (SDMMC) provides an interface between the APB peripheral bus
and MultiMediaCards (MMCs), SD memory cards and SDIO cards.
The SDMMC features include the following:
3.33
•
Full compliance with MultiMediaCard System Specification Version 4.2. Card support
for three different databus modes: 1-bit (default), 4-bit and 8-bit
•
Full compatibility with previous versions of MultiMediaCards (forward compatibility)
•
Full compliance with SD Memory Card Specifications Version 2.0
•
Full compliance with SD I/O Card Specification Version 2.0: card support for two
different databus modes: 1-bit (default) and 4-bit
•
Data transfer up to 48 MHz for the 8 bit mode
•
Data write and read with DMA capability
Universal serial bus on-the-go full-speed (OTG_FS)
The devices embed an USB OTG full-speed device/host/OTG peripheral with integrated
transceivers. The USB OTG FS peripheral is compliant with the USB 2.0 specification and
with the OTG 2.0 specification. It has software-configurable endpoint setting and supports
suspend/resume. The USB OTG controller requires a dedicated 48 MHz clock that can be
provided by the internal multispeed oscillator (MSI) automatically trimmed by 32.768 kHz
external oscillator (LSE).This allows to use the USB device without external high speed
crystal (HSE).
54/204
DS10969 Rev 5
STM32L475xx
Functional overview
The major features are:
•
Combined Rx and Tx FIFO size of 1.25 KB with dynamic FIFO sizing
•
Supports the session request protocol (SRP) and host negotiation protocol (HNP)
•
1 bidirectional control endpoint + 5 IN endpoints + 5 OUT endpoints
•
12 host channels with periodic OUT support
•
HNP/SNP/IP inside (no need for any external resistor)
•
USB 2.0 LPM (Link Power Management) support
•
Battery Charging Specification Revision 1.2 support
•
Internal FS OTG PHY support
For OTG/Host modes, a power switch is needed in case bus-powered devices are
connected.
3.34
Flexible static memory controller (FSMC)
Flexible static memory controller (FSMC) is also named Flexible memory controller (FMC).
The main features of the FMC controller are the following:
•
Interface with static-memory mapped devices in multiplexed mode including:
–
Static random access memory (SRAM)
–
NOR Flash memory
–
PSRAM
•
8-,16- bit data bus width
•
Write FIFO
•
The Maximum FMC_CLK frequency for synchronous accesses is HCLK/2.
LCD parallel interface
The FMC can be configured to interface seamlessly with most graphic LCD controllers. It
supports the Intel 8080 and Motorola 6800 modes, and is flexible enough to adapt to
specific LCD interfaces. This LCD parallel interface capability makes it easy to build cost
effective graphic applications using LCD modules with embedded controllers or high
performance solutions using external controllers with dedicated acceleration.
3.35
Quad SPI memory interface (QUADSPI)
The Quad SPI is a specialized communication interface targeting single, dual or quad SPI
flash memories. It can operate in any of the three following modes:
•
Indirect mode: all the operations are performed using the QUADSPI registers
•
Status polling mode: the external flash status register is periodically read and an
interrupt can be generated in case of flag setting
•
Memory-mapped mode: the external Flash is memory mapped and is seen by the
system as if it were an internal memory
DS10969 Rev 5
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57
Functional overview
STM32L475xx
The Quad SPI interface supports:
•
Three functional modes: indirect, status-polling, and memory-mapped
•
SDR and DDR support
•
Fully programmable opcode for both indirect and memory mapped mode
•
Fully programmable frame format for both indirect and memory mapped mode
•
Each of the 5 following phases can be configured independently (enable, length,
single/dual/quad communication)
–
56/204
Instruction phase
–
Address phase
–
Alternate bytes phase
–
Dummy cycles phase
–
Data phase
•
Integrated FIFO for reception and transmission
•
8, 16, and 32-bit data accesses are allowed
•
DMA channel for indirect mode operations
•
Programmable masking for external flash flag management
•
Timeout management
•
Interrupt generation on FIFO threshold, timeout, status match, operation complete, and
access error
DS10969 Rev 5
STM32L475xx
Functional overview
3.36
Development support
3.36.1
Serial wire JTAG debug port (SWJ-DP)
The Arm® SWJ-DP interface is embedded, and is a combined JTAG and serial wire debug
port that enables either a serial wire debug or a JTAG probe to be connected to the target.
Debug is performed using 2 pins only instead of 5 required by the JTAG (JTAG pins could
be re-use as GPIO with alternate function): the JTAG TMS and TCK pins are shared with
SWDIO and SWCLK, respectively, and a specific sequence on the TMS pin is used to
switch between JTAG-DP and SW-DP.
3.36.2
Embedded Trace Macrocell™
The Arm® Embedded Trace Macrocell™ provides a greater visibility of the instruction and
data flow inside the CPU core by streaming compressed data at a very high rate from the
STM32L475xx through a small number of ETM pins to an external hardware trace port
analyzer (TPA) device. Real-time instruction and data flow activity be recorded and then
formatted for display on the host computer that runs the debugger software. TPA hardware
is commercially available from common development tool vendors.
The Embedded Trace Macrocell™ operates with third party debugger software tools.
DS10969 Rev 5
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57
Pinouts and pin description
4
STM32L475xx
Pinouts and pin description
100
99
98
97
96
95
94
93
92
91
90
89
88
87
86
85
84
83
82
81
80
79
78
77
76
VDD
VSS
PE1
PE0
PB9
PB8
BOOT0
PB7
PB6
PB5
PB4
PB3
PD7
PD6
PD5
PD4
PD3
PD2
PD1
PD0
PC12
PC11
PC10
PA15
PA14
Figure 6. STM32L475Vx LQFP100 pinout(1)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
LQFP100
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
VDD
VSS
VDDUSB
PA13
PA12
PA11
PA10
PA9
PA8
PC9
PC8
PC7
PC6
PD15
PD14
PD13
PD12
PD11
PD10
PD9
PD8
PB15
PB14
PB13
PB12
PA3
VSS
VDD
PA4
PA5
PA6
PA7
PC4
PC5
PB0
PB1
PB2
PE7
PE8
PE9
PE10
PE11
PE12
PE13
PE14
PE15
PB10
PB11
VSS
VDD
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
PE2
PE3
PE4
PE5
PE6
VBAT
PC13
PC14-OSC32_IN
PC15-OSC32_OUT
VSS
VDD
PH0-OSC_IN
PH1-OSC_OUT
NRST
PC0
PC1
PC2
PC3
VSSA
VREFVREF+
VDDA
PA0
PA1
PA2
MS31271V3
1. The above figure shows the package top view.
58/204
DS10969 Rev 5
STM32L475xx
Pinouts and pin description
VDD
VSS
PB9
PB8
BOOT0
PB7
PB6
PB5
PB4 (NJTRST)
PB3 (JTDO-TRACESWO)
PD2
PC12
PC11
PC10
PA15 (JTDI)
PA14 (JTCK-SWCLK)
64
63
62
61
60
59
58
57
56
55
54
53
52
51
50
49
Figure 7. STM32L475Rx LQFP64 pinout(1)
VBAT
1
48
VDDUSB
PC13
2
47
VSS
PC14-OSC32_IN (PC14)
3
46
PA13 (JTMS-SWDIO)
PC15-OSC32_OUT (PC15)
4
45
PA12
PH0-OSC_IN (PH0)
5
44
PA11
PH1-OSC_OUT (PH1)
6
43
PA10
NRST
7
42
PA9
PC0
8
41
PA8
PC1
9
40
PC9
PC2
10
39
PC8
PC3
11
38
PC7
VSSA/VREF-
12
37
PC6
VDDA/VREF+
13
36
PB15
PA0
14
35
PB14
PA1
15
34
PB13
PA2
16
33
PB12
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
PA3
VSS
VDD
PA4
PA5
PA6
PA7
PC4
PC5
PB0
PB1
PB2
PB10
PB11
VSS
VDD
LQFP64
MS31272V5
1. The above figure shows the package top view.
Table 15. Legend/abbreviations used in the pinout table
Name
Pin name
Pin type
Abbreviation
Unless otherwise specified in brackets below the pin name, the pin function during and after
reset is the same as the actual pin name
S
Supply pin
I
Input only pin
I/O
Input / output pin
FT
5 V tolerant I/O
TT
3.6 V tolerant I/O
B
Dedicated BOOT0 pin
RST
I/O structure
Bidirectional reset pin with embedded weak pull-up resistor
Option for TT or FT I/Os
_f (1)
_u
(2)
_a (3)
Notes
Definition
I/O, Fm+ capable
I/O, with USB function supplied by VDDUSB
I/O, with Analog switch function supplied by VDDA
Unless otherwise specified by a note, all I/Os are set as analog inputs during and after reset.
DS10969 Rev 5
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84
Pinouts and pin description
STM32L475xx
Table 15. Legend/abbreviations used in the pinout table (continued)
Name
Abbreviation
Definition
Alternate
Functions selected through GPIOx_AFR registers
functions
Pin
functions Additional
Functions directly selected/enabled through peripheral registers
functions
1. The related I/O structures in Table 16 are: FT_f, FT_fa, FT_f, FT_fa.
2. The related I/O structures in Table 16 are: FT_u.
3. The related I/O structures in Table 16 are: FT_a, FT_fa, TT_a.
Table 16. STM32L475xx pin definitions
Pin functions
LQFP100
(function after
reset)
Pin type
I/O structure
Notes
Pin name
LQFP64
Pin
Number
-
1
PE2
I/O
FT
-
TRACECK, TIM3_ETR,
TSC_G7_IO1, FMC_A23,
SAI1_MCLK_A, EVENTOUT
-
-
2
PE3
I/O
FT
-
TRACED0, TIM3_CH1,
TSC_G7_IO2, FMC_A19,
SAI1_SD_B, EVENTOUT
-
-
TRACED1, TIM3_CH2,
DFSDM1_DATIN3,
TSC_G7_IO3, FMC_A20,
SAI1_FS_A, EVENTOUT
-
-
-
3
PE4
I/O
FT
Alternate functions
Additional functions
-
4
PE5
I/O
FT
-
TRACED2, TIM3_CH3,
DFSDM1_CKIN3,
TSC_G7_IO4, FMC_A21,
SAI1_SCK_A, EVENTOUT
-
5
PE6
I/O
FT
-
TRACED3, TIM3_CH4,
FMC_A22, SAI1_SD_A,
EVENTOUT
RTC_TAMP3/
WKUP3
1
6
VBAT
S
-
-
-
-
EVENTOUT
RTC_TAMP1/
RTC_TS/
RTC_OUT/
WKUP2
EVENTOUT
OSC32_IN
(2)
EVENTOUT
OSC32_OUT
-
-
-
2
7
PC13
I/O
FT
3
8
PC14OSC32_IN
(PC14)
I/O
FT
4
9
PC15OSC32_OUT
(PC15)
I/O
FT
-
10
VSS
S
-
60/204
(1)
(2)
(1)
(2)
(1)
DS10969 Rev 5
STM32L475xx
Pinouts and pin description
Table 16. STM32L475xx pin definitions (continued)
Pin functions
LQFP100
(function after
reset)
Pin type
I/O structure
Notes
Pin name
LQFP64
Pin
Number
Alternate functions
-
11
VDD
S
-
-
-
-
5
12
PH0-OSC_IN
(PH0)
I/O
FT
-
EVENTOUT
OSC_IN
6
13
PH1-OSC_OUT
(PH1)
I/O
FT
-
EVENTOUT
OSC_OUT
7
14
NRST
I/O
RST
-
-
-
ADC123_IN1
Additional functions
8
15
PC0
I/O
FT_fa
-
LPTIM1_IN1, I2C3_SCL,
DFSDM1_DATIN4,
LPUART1_RX, LPTIM2_IN1,
EVENTOUT
9
16
PC1
I/O
FT_fa
-
LPTIM1_OUT, I2C3_SDA,
DFSDM1_CKIN4,
LPUART1_TX, EVENTOUT
ADC123_IN2
10
17
PC2
I/O
FT_a
-
LPTIM1_IN2, SPI2_MISO,
DFSDM1_CKOUT,
EVENTOUT
ADC123_IN3
11
18
PC3
I/O
FT_a
-
LPTIM1_ETR, SPI2_MOSI,
SAI1_SD_A, LPTIM2_ETR,
EVENTOUT
ADC123_IN4
-
19
VSSA
S
-
-
-
-
-
20
VREF-
S
-
-
-
-
12
-
VSSA/VREF-
S
-
-
-
-
-
21
VREF+
S
-
-
-
VREFBUF_OUT
-
22
VDDA
S
-
-
-
-
13
-
VDDA/VREF+
S
-
-
-
-
-
TIM2_CH1, TIM5_CH1,
TIM8_ETR, USART2_CTS,
UART4_TX, SAI1_EXTCLK,
TIM2_ETR, EVENTOUT
OPAMP1_VINP, ADC12_IN5,
RTC_TAMP2/WKUP1
OPAMP1_VINM, ADC12_IN6
14
23
PA0
I/O
FT_a
15
24
PA1
I/O
FT_a
-
TIM2_CH2, TIM5_CH2,
USART2_RTS_DE,
UART4_RX, TIM15_CH1N,
EVENTOUT
16
25
PA2
I/O
FT_a
-
TIM2_CH3, TIM5_CH3,
USART2_TX, SAI2_EXTCLK,
TIM15_CH1, EVENTOUT
ADC12_IN7, WKUP4/LSCO
17
26
PA3
I/O
TT_a
-
TIM2_CH4, TIM5_CH4,
USART2_RX, TIM15_CH2,
EVENTOUT
OPAMP1_
VOUT, ADC12_IN8
DS10969 Rev 5
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84
Pinouts and pin description
STM32L475xx
Table 16. STM32L475xx pin definitions (continued)
Pin functions
LQFP100
(function after
reset)
Pin type
I/O structure
Notes
Pin name
LQFP64
Pin
Number
Alternate functions
18
27
VSS
S
-
-
-
-
19
28
VDD
S
-
-
-
-
20
29
PA4
I/O
TT_a
-
SPI1_NSS, SPI3_NSS,
USART2_CK, SAI1_FS_B,
LPTIM2_OUT, EVENTOUT
ADC12_IN9, DAC1_OUT1
21
30
PA5
I/O
TT_a
-
TIM2_CH1, TIM2_ETR,
TIM8_CH1N, SPI1_SCK,
LPTIM2_ETR, EVENTOUT
ADC12_IN10, DAC1_OUT2
-
TIM1_BKIN, TIM3_CH1,
TIM8_BKIN, SPI1_MISO,
USART3_CTS,
QUADSPI_BK1_IO3,
TIM1_BKIN_COMP2,
TIM8_BKIN_COMP2,
TIM16_CH1, EVENTOUT
OPAMP2_VINP, ADC12_IN11
OPAMP2_VINM, ADC12_IN12
22
31
PA6
I/O
FT_a
Additional functions
23
32
PA7
I/O
FT_a
-
TIM1_CH1N, TIM3_CH2,
TIM8_CH1N, SPI1_MOSI,
QUADSPI_BK1_IO2,
TIM17_CH1, EVENTOUT
24
33
PC4
I/O
FT_a
-
USART3_TX, EVENTOUT
COMP1_INM, ADC12_IN13
25
34
PC5
I/O
FT_a
-
USART3_RX, EVENTOUT
COMP1_INP, ADC12_IN14,
WKUP5
-
TIM1_CH2N, TIM3_CH3,
TIM8_CH2N, USART3_CK,
QUADSPI_BK1_IO1,
COMP1_OUT, EVENTOUT
OPAMP2_
VOUT, ADC12_IN15
COMP1_INM, ADC12_IN16
26
35
PB0
I/O
TT_a
27
36
PB1
I/O
FT_a
-
TIM1_CH3N, TIM3_CH4,
TIM8_CH3N,
DFSDM1_DATIN0,
USART3_RTS_DE,
QUADSPI_BK1_IO0,
LPTIM2_IN1, EVENTOUT
28
37
PB2
I/O
FT_a
-
RTC_OUT, LPTIM1_OUT,
I2C3_SMBA,
DFSDM1_CKIN0, EVENTOUT
COMP1_INP
-
38
PE7
I/O
FT
-
TIM1_ETR,
DFSDM1_DATIN2, FMC_D4,
SAI1_SD_B, EVENTOUT
-
-
39
PE8
I/O
FT
-
TIM1_CH1N,
DFSDM1_CKIN2, FMC_D5,
SAI1_SCK_B, EVENTOUT
-
62/204
DS10969 Rev 5
STM32L475xx
Pinouts and pin description
Table 16. STM32L475xx pin definitions (continued)
PE9
-
-
-
-
-
29
30
41
42
43
44
45
46
47
48
PE10
PE11
PE12
PE13
PE14
PE15
PB10
PB11
Notes
40
I/O structure
-
Pin type
LQFP100
(function after
reset)
-
Pin functions
Pin name
LQFP64
Pin
Number
I/O
FT
-
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
FT
FT
FT
FT
FT
FT
FT_f
FT_f
Alternate functions
Additional functions
TIM1_CH1,
DFSDM1_CKOUT, FMC_D6,
SAI1_FS_B, EVENTOUT
-
-
TIM1_CH2N,
DFSDM1_DATIN4,
TSC_G5_IO1, FMC_D7,
QUADSPI_CLK,
SAI1_MCLK_B, EVENTOUT
-
-
TIM1_CH2, DFSDM1_CKIN4,
TSC_G5_IO2,
QUADSPI_NCS, FMC_D8,
EVENTOUT
-
-
TIM1_CH3N, SPI1_NSS,
DFSDM1_DATIN5,
TSC_G5_IO3,
QUADSPI_BK1_IO0,
FMC_D9, EVENTOUT
-
-
TIM1_CH3, SPI1_SCK,
DFSDM1_CKIN5,
TSC_G5_IO4,
QUADSPI_BK1_IO1,
FMC_D10, EVENTOUT
-
-
TIM1_CH4, TIM1_BKIN2,
TIM1_BKIN2_COMP2,
SPI1_MISO,
QUADSPI_BK1_IO2,
FMC_D11, EVENTOUT
-
-
TIM1_BKIN,
TIM1_BKIN_COMP1,
SPI1_MOSI,
QUADSPI_BK1_IO3,
FMC_D12, EVENTOUT
-
-
TIM2_CH3, I2C2_SCL,
SPI2_SCK,
DFSDM1_DATIN7,
USART3_TX, LPUART1_RX,
QUADSPI_CLK,
COMP1_OUT, SAI1_SCK_A,
EVENTOUT
-
-
TIM2_CH4, I2C2_SDA,
DFSDM1_CKIN7,
USART3_RX, LPUART1_TX,
QUADSPI_NCS,
COMP2_OUT, EVENTOUT
-
DS10969 Rev 5
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84
Pinouts and pin description
STM32L475xx
Table 16. STM32L475xx pin definitions (continued)
Pin functions
LQFP100
(function after
reset)
Pin type
I/O structure
Notes
Pin name
LQFP64
Pin
Number
Alternate functions
31
49
VSS
S
-
-
-
-
32
50
VDD
S
-
-
-
-
-
TIM1_BKIN,
TIM1_BKIN_COMP2,
I2C2_SMBA, SPI2_NSS,
DFSDM1_DATIN1,
USART3_CK,
LPUART1_RTS_DE,
TSC_G1_IO1, SWPMI1_IO,
SAI2_FS_A, TIM15_BKIN,
EVENTOUT
-
-
TIM1_CH1N, I2C2_SCL,
SPI2_SCK, DFSDM1_CKIN1,
USART3_CTS,
LPUART1_CTS,
TSC_G1_IO2, SWPMI1_TX,
SAI2_SCK_A, TIM15_CH1N,
EVENTOUT
-
-
TIM1_CH2N, TIM8_CH2N,
I2C2_SDA, SPI2_MISO,
DFSDM1_DATIN2,
USART3_RTS_DE,
TSC_G1_IO3, SWPMI1_RX,
SAI2_MCLK_A, TIM15_CH1,
EVENTOUT
-
-
33
34
35
51
52
53
PB12
PB13
PB14
I/O
I/O
I/O
FT
FT_f
FT_f
Additional functions
36
54
PB15
I/O
FT
-
RTC_REFIN, TIM1_CH3N,
TIM8_CH3N, SPI2_MOSI,
DFSDM1_CKIN2,
TSC_G1_IO4,
SWPMI1_SUSPEND,
SAI2_SD_A, TIM15_CH2,
EVENTOUT
-
55
PD8
I/O
FT
-
USART3_TX, FMC_D13,
EVENTOUT
-
-
56
PD9
I/O
FT
-
USART3_RX, FMC_D14,
SAI2_MCLK_A, EVENTOUT
-
-
57
PD10
I/O
FT
-
USART3_CK, TSC_G6_IO1,
FMC_D15, SAI2_SCK_A,
EVENTOUT
-
-
58
PD11
I/O
FT
-
USART3_CTS, TSC_G6_IO2,
FMC_A16, SAI2_SD_A,
LPTIM2_ETR, EVENTOUT
-
64/204
DS10969 Rev 5
STM32L475xx
Pinouts and pin description
Table 16. STM32L475xx pin definitions (continued)
Notes
(function after
reset)
I/O structure
Pin functions
Pin name
Pin type
LQFP100
LQFP64
Pin
Number
Alternate functions
Additional functions
-
-
59
PD12
I/O
FT
-
TIM4_CH1,
USART3_RTS_DE,
TSC_G6_IO3, FMC_A17,
SAI2_FS_A, LPTIM2_IN1,
EVENTOUT
-
60
PD13
I/O
FT
-
TIM4_CH2, TSC_G6_IO4,
FMC_A18, LPTIM2_OUT,
EVENTOUT
-
-
61
PD14
I/O
FT
-
TIM4_CH3, FMC_D0,
EVENTOUT
-
-
62
PD15
I/O
FT
-
TIM4_CH4, FMC_D1,
EVENTOUT
-
-
TIM3_CH1, TIM8_CH1,
DFSDM1_CKIN3,
TSC_G4_IO1, SDMMC1_D6,
SAI2_MCLK_A, EVENTOUT
-
-
37
63
PC6
I/O
FT
38
64
PC7
I/O
FT
-
TIM3_CH2, TIM8_CH2,
DFSDM1_DATIN3,
TSC_G4_IO2, SDMMC1_D7,
SAI2_MCLK_B, EVENTOUT
39
65
PC8
I/O
FT
-
TIM3_CH3, TIM8_CH3,
TSC_G4_IO3, SDMMC1_D0,
EVENTOUT
-
-
40
66
PC9
I/O
FT
-
TIM8_BKIN2, TIM3_CH4,
TIM8_CH4, TSC_G4_IO4,
OTG_FS_NOE, SDMMC1_D1,
SAI2_EXTCLK,
TIM8_BKIN2_COMP1,
EVENTOUT
41
67
PA8
I/O
FT
-
MCO, TIM1_CH1,
USART1_CK, OTG_FS_SOF,
LPTIM2_OUT, EVENTOUT
-
42
68
PA9
I/O
FT_u
-
TIM1_CH2, USART1_TX,
TIM15_BKIN, EVENTOUT
OTG_FS_VBUS
43
69
PA10
I/O
FT_u
-
TIM1_CH3, USART1_RX,
OTG_FS_ID, TIM17_BKIN,
EVENTOUT
-
-
TIM1_CH4, TIM1_BKIN2,
USART1_CTS, CAN1_RX,
OTG_FS_DM,
TIM1_BKIN2_COMP1,
EVENTOUT
-
44
70
PA11
I/O
FT_u
DS10969 Rev 5
65/204
84
Pinouts and pin description
STM32L475xx
Table 16. STM32L475xx pin definitions (continued)
Pin functions
LQFP100
(function after
reset)
Pin type
I/O structure
Notes
Pin name
LQFP64
Pin
Number
45
71
PA12
I/O
FT_u
-
TIM1_ETR,
USART1_RTS_DE, CAN1_TX,
OTG_FS_DP, EVENTOUT
-
46
72
PA13
(JTMS-SWDIO)
I/O
FT
(3)
JTMS-SWDIO, IR_OUT,
OTG_FS_NOE, EVENTOUT
-
47
-
VSS
S
-
-
-
-
48
73
VDDUSB
S
-
-
-
-
-
74
VSS
S
-
-
-
-
-
75
VDD
S
-
-
-
-
49
76
PA14
(JTCK-SWCLK)
I/O
FT
(3)
JTCK-SWCLK, EVENTOUT
-
(3)
JTDI, TIM2_CH1, TIM2_ETR,
SPI1_NSS, SPI3_NSS,
UART4_RTS_DE,
TSC_G3_IO1, SAI2_FS_B,
EVENTOUT
-
-
SPI3_SCK, USART3_TX,
UART4_TX, TSC_G3_IO2,
SDMMC1_D2, SAI2_SCK_B,
EVENTOUT
-
-
SPI3_MISO, USART3_RX,
UART4_RX, TSC_G3_IO3,
SDMMC1_D3, SAI2_MCLK_B,
EVENTOUT
-
-
50
51
52
77
78
79
PA15 (JTDI)
PC10
PC11
I/O
I/O
I/O
FT
FT
FT
Alternate functions
Additional functions
53
80
PC12
I/O
FT
-
SPI3_MOSI, USART3_CK,
UART5_TX, TSC_G3_IO4,
SDMMC1_CK, SAI2_SD_B,
EVENTOUT
-
81
PD0
I/O
FT
-
SPI2_NSS,
DFSDM1_DATIN7, CAN1_RX,
FMC_D2, EVENTOUT
-
-
82
PD1
I/O
FT
-
SPI2_SCK, DFSDM1_CKIN7,
CAN1_TX, FMC_D3,
EVENTOUT
-
-
TIM3_ETR,
USART3_RTS_DE,
UART5_RX, TSC_SYNC,
SDMMC1_CMD, EVENTOUT
-
54
83
66/204
PD2
I/O
FT
DS10969 Rev 5
STM32L475xx
Pinouts and pin description
Table 16. STM32L475xx pin definitions (continued)
Notes
(function after
reset)
I/O structure
Pin functions
Pin name
Pin type
LQFP100
LQFP64
Pin
Number
Alternate functions
Additional functions
-
-
84
PD3
I/O
FT
-
SPI2_MISO,
DFSDM1_DATIN0,
USART2_CTS, FMC_CLK,
EVENTOUT
-
85
PD4
I/O
FT
-
SPI2_MOSI, DFSDM1_CKIN0,
USART2_RTS_DE,
FMC_NOE, EVENTOUT
-
-
86
PD5
I/O
FT
-
USART2_TX, FMC_NWE,
EVENTOUT
-
-
87
PD6
I/O
FT
-
DFSDM1_DATIN1,
USART2_RX, FMC_NWAIT,
SAI1_SD_A, EVENTOUT
-
-
88
PD7
I/O
FT
-
DFSDM1_CKIN1,
USART2_CK, FMC_NE1,
EVENTOUT
-
89
PB3
(JTDOTRACESWO)
(3)
JTDO-TRACESWO,
TIM2_CH2, SPI1_SCK,
SPI3_SCK,
USART1_RTS_DE,
SAI1_SCK_B, EVENTOUT
COMP2_INM
(3)
NJTRST, TIM3_CH1,
SPI1_MISO, SPI3_MISO,
USART1_CTS,
UART5_RTS_DE,
TSC_G2_IO1, SAI1_MCLK_B,
TIM17_BKIN, EVENTOUT
COMP2_INP
-
LPTIM1_IN1, TIM3_CH2,
I2C1_SMBA, SPI1_MOSI,
SPI3_MOSI, USART1_CK,
UART5_CTS, TSC_G2_IO2,
COMP2_OUT, SAI1_SD_B,
TIM16_BKIN, EVENTOUT
-
-
LPTIM1_ETR, TIM4_CH1,
TIM8_BKIN2, I2C1_SCL,
DFSDM1_DATIN5,
USART1_TX, TSC_G2_IO3,
TIM8_BKIN2_COMP2,
SAI1_FS_B, TIM16_CH1N,
EVENTOUT
COMP2_INP
55
56
57
58
90
91
92
PB4
(NJTRST)
PB5
PB6
I/O
I/O
I/O
I/O
FT_a
FT_a
FT_a
FT_fa
DS10969 Rev 5
67/204
84
Pinouts and pin description
STM32L475xx
Table 16. STM32L475xx pin definitions (continued)
Notes
(function after
reset)
I/O structure
Pin functions
Pin name
Pin type
LQFP100
LQFP64
Pin
Number
Alternate functions
Additional functions
COMP2_INM, PVD_IN
59
93
PB7
I/O
FT_fa
-
LPTIM1_IN2, TIM4_CH2,
TIM8_BKIN, I2C1_SDA,
DFSDM1_CKIN5,
USART1_RX, UART4_CTS,
TSC_G2_IO4, FMC_NL,
TIM8_BKIN_COMP1,
TIM17_CH1N, EVENTOUT
60
94
BOOT0
I
-
-
-
-
-
TIM4_CH3, I2C1_SCL,
DFSDM1_DATIN6, CAN1_RX,
SDMMC1_D4, SAI1_MCLK_A,
TIM16_CH1, EVENTOUT
-
-
61
95
PB8
I/O
FT_f
62
96
PB9
I/O
FT_f
-
IR_OUT, TIM4_CH4,
I2C1_SDA, SPI2_NSS,
DFSDM1_CKIN6, CAN1_TX,
SDMMC1_D5, SAI1_FS_A,
TIM17_CH1, EVENTOUT
-
97
PE0
I/O
FT
-
TIM4_ETR, FMC_NBL0,
TIM16_CH1, EVENTOUT
-
-
98
PE1
I/O
FT
-
FMC_NBL1, TIM17_CH1,
EVENTOUT
-
63
99
VSS
S
-
-
-
-
64 100
VDD
S
-
-
-
-
1. PC13, PC14 and PC15 are supplied through the power switch. Since the switch only sinks a limited amount of current
(3 mA), the use of GPIOs PC13 to PC15 in output mode is limited:
- The speed should not exceed 2 MHz with a maximum load of 30 pF
- These GPIOs must not be used as current sources (e.g. to drive an LED).
2. After a Backup domain power-up, PC13, PC14 and PC15 operate as GPIOs. Their function then depends on the content of
the RTC registers which are not reset by the system reset. For details on how to manage these GPIOs, refer to the Backup
domain and RTC register descriptions in the RM0351 reference manual.
3. After reset, these pins are configured as JTAG/SW debug alternate functions, and the internal pull-up on PA15, PA13, PB4
pins and the internal pull-down on PA14 pin are activated.
68/204
DS10969 Rev 5
AF1
AF2
AF3
AF4
AF5
AF6
AF7
SYS_AF
TIM1/TIM2/
TIM5/TIM8/
LPTIM1
TIM1/TIM2/
TIM3/TIM4/
TIM5
TIM8
I2C1/I2C2/I2C3
SPI1/SPI2
SPI3/DFSDM
USART1/
USART2/
USART3
PA0
-
TIM2_CH1
TIM5_CH1
TIM8_ETR
-
-
-
USART2_CTS
PA1
-
TIM2_CH2
TIM5_CH2
-
-
-
-
USART2_RTS_
DE
PA2
-
TIM2_CH3
TIM5_CH3
-
-
-
-
USART2_TX
PA3
-
TIM2_CH4
TIM5_CH4
-
-
-
-
USART2_RX
PA4
-
-
-
-
-
SPI1_NSS
SPI3_NSS
USART2_CK
PA5
-
TIM2_CH1
TIM2_ETR
TIM8_CH1N
-
SPI1_SCK
-
-
PA6
-
TIM1_BKIN
TIM3_CH1
TIM8_BKIN
-
SPI1_MISO
-
USART3_CTS
PA7
-
TIM1_CH1N
TIM3_CH2
TIM8_CH1N
-
SPI1_MOSI
-
-
PA8
MCO
TIM1_CH1
-
-
-
-
-
USART1_CK
PA9
-
TIM1_CH2
-
-
-
-
-
USART1_TX
PA10
-
TIM1_CH3
-
-
-
-
-
USART1_RX
PA11
-
TIM1_CH4
TIM1_BKIN2
-
-
-
-
USART1_CTS
PA12
-
TIM1_ETR
-
-
-
-
-
USART1_RTS_
DE
PA13
JTMS-SWDIO
IR_OUT
-
-
-
-
-
-
PA14
JTCK-SWCLK
-
-
-
-
-
-
-
PA15
JTDI
TIM2_CH1
TIM2_ETR
-
-
SPI1_NSS
SPI3_NSS
-
Port
DS10969 Rev 5
Port A
69/204
Pinouts and pin description
AF0
STM32L475xx
Table 17. Alternate function AF0 to AF7(1)
AF1
AF2
AF3
AF4
AF5
AF6
AF7
SYS_AF
TIM1/TIM2/
TIM5/TIM8/
LPTIM1
TIM1/TIM2/
TIM3/TIM4/
TIM5
TIM8
I2C1/I2C2/I2C3
SPI1/SPI2
SPI3/DFSDM
USART1/
USART2/
USART3
PB0
-
TIM1_CH2N
TIM3_CH3
TIM8_CH2N
-
-
-
USART3_CK
PB1
-
TIM1_CH3N
TIM3_CH4
TIM8_CH3N
-
-
DFSDM1_
DATIN0
USART3_RTS_
DE
PB2
RTC_OUT
LPTIM1_OUT
-
-
I2C3_SMBA
-
DFSDM1_CKIN0
-
PB3
JTDOTRACESWO
TIM2_CH2
-
-
-
SPI1_SCK
SPI3_SCK
USART1_RTS_
DE
PB4
NJTRST
-
TIM3_CH1
-
-
SPI1_MISO
SPI3_MISO
USART1_CTS
PB5
-
LPTIM1_IN1
TIM3_CH2
-
I2C1_SMBA
SPI1_MOSI
SPI3_MOSI
USART1_CK
PB6
-
LPTIM1_ETR
TIM4_CH1
TIM8_BKIN2
I2C1_SCL
-
DFSDM1_
DATIN5
USART1_TX
PB7
-
LPTIM1_IN2
TIM4_CH2
TIM8_BKIN
I2C1_SDA
-
DFSDM1_CKIN5
USART1_RX
PB8
-
-
TIM4_CH3
-
I2C1_SCL
-
DFSDM1_
DATIN6
-
PB9
-
IR_OUT
TIM4_CH4
-
I2C1_SDA
SPI2_NSS
DFSDM1_CKIN6
-
PB10
-
TIM2_CH3
-
-
I2C2_SCL
SPI2_SCK
DFSDM1_
DATIN7
USART3_TX
PB11
-
TIM2_CH4
-
-
I2C2_SDA
-
DFSDM1_CKIN7
USART3_RX
PB12
-
TIM1_BKIN
-
TIM1_BKIN_
COMP2
I2C2_SMBA
SPI2_NSS
DFSDM1_
DATIN1
USART3_CK
PB13
-
TIM1_CH1N
-
-
I2C2_SCL
SPI2_SCK
DFSDM1_CKIN1
USART3_CTS
PB14
-
TIM1_CH2N
-
TIM8_CH2N
I2C2_SDA
SPI2_MISO
DFSDM1_
DATIN2
USART3_RTS_
DE
PB15
RTC_REFIN
TIM1_CH3N
-
TIM8_CH3N
-
SPI2_MOSI
DFSDM1_CKIN2
-
Port
DS10969 Rev 5
Port B
STM32L475xx
AF0
Pinouts and pin description
70/204
Table 17. Alternate function AF0 to AF7(1) (continued)
AF1
AF2
AF3
AF4
AF5
AF6
AF7
SYS_AF
TIM1/TIM2/
TIM5/TIM8/
LPTIM1
TIM1/TIM2/
TIM3/TIM4/
TIM5
TIM8
I2C1/I2C2/I2C3
SPI1/SPI2
SPI3/DFSDM
USART1/
USART2/
USART3
PC0
-
LPTIM1_IN1
-
-
I2C3_SCL
-
DFSDM1_
DATIN4
-
PC1
-
LPTIM1_OUT
-
-
I2C3_SDA
-
DFSDM1_CKIN4
-
PC2
-
LPTIM1_IN2
-
-
-
SPI2_MISO
DFSDM1_
CKOUT
-
PC3
-
LPTIM1_ETR
-
-
-
SPI2_MOSI
-
-
PC4
-
-
-
-
-
-
-
USART3_TX
PC5
-
-
-
-
-
-
-
USART3_RX
PC6
-
-
TIM3_CH1
TIM8_CH1
-
-
DFSDM1_CKIN3
-
PC7
-
-
TIM3_CH2
TIM8_CH2
-
-
DFSDM1_
DATIN3
-
PC8
-
-
TIM3_CH3
TIM8_CH3
-
-
-
-
PC9
-
TIM8_BKIN2
TIM3_CH4
TIM8_CH4
-
-
-
-
PC10
-
-
-
-
-
-
SPI3_SCK
USART3_TX
PC11
-
-
-
-
-
-
SPI3_MISO
USART3_RX
PC12
-
-
-
-
-
-
SPI3_MOSI
USART3_CK
PC13
-
-
-
-
-
-
-
-
PC14
-
-
-
-
-
-
-
-
PC15
-
-
-
-
-
-
-
-
Port
DS10969 Rev 5
Port C
71/204
Pinouts and pin description
AF0
STM32L475xx
Table 17. Alternate function AF0 to AF7(1) (continued)
AF1
AF2
AF3
AF4
AF5
AF6
AF7
SYS_AF
TIM1/TIM2/
TIM5/TIM8/
LPTIM1
TIM1/TIM2/
TIM3/TIM4/
TIM5
TIM8
I2C1/I2C2/I2C3
SPI1/SPI2
SPI3/DFSDM
USART1/
USART2/
USART3
PD0
-
-
-
-
-
SPI2_NSS
DFSDM1_
DATIN7
-
PD1
-
-
-
-
-
SPI2_SCK
DFSDM1_CKIN7
-
PD2
-
-
TIM3_ETR
-
-
-
-
USART3_RTS_
DE
PD3
-
-
-
-
-
SPI2_MISO
DFSDM1_
DATIN0
USART2_CTS
PD4
-
-
-
-
-
SPI2_MOSI
DFSDM1_CKIN0
USART2_RTS_
DE
PD5
-
-
-
-
-
-
-
USART2_TX
PD6
-
-
-
-
-
-
DFSDM1_
DATIN1
USART2_RX
PD7
-
-
-
-
-
-
DFSDM1_CKIN1
USART2_CK
PD8
-
-
-
-
-
-
-
USART3_TX
PD9
-
-
-
-
-
-
-
USART3_RX
PD10
-
-
-
-
-
-
-
USART3_CK
PD11
-
-
-
-
-
-
-
USART3_CTS
PD12
-
-
TIM4_CH1
-
-
-
-
USART3_RTS_
DE
PD13
-
-
TIM4_CH2
-
-
-
-
-
PD14
-
-
TIM4_CH3
-
-
-
-
-
PD15
-
-
TIM4_CH4
-
-
-
-
-
Port
DS10969 Rev 5
Port D
STM32L475xx
AF0
Pinouts and pin description
72/204
Table 17. Alternate function AF0 to AF7(1) (continued)
AF1
AF2
AF3
AF4
AF5
AF6
AF7
SYS_AF
TIM1/TIM2/
TIM5/TIM8/
LPTIM1
TIM1/TIM2/
TIM3/TIM4/
TIM5
TIM8
I2C1/I2C2/I2C3
SPI1/SPI2
SPI3/DFSDM
USART1/
USART2/
USART3
PE0
-
-
TIM4_ETR
-
-
-
-
-
PE1
-
-
-
-
-
-
-
-
PE2
TRACECK
-
TIM3_ETR
-
-
-
-
-
PE3
TRACED0
-
TIM3_CH1
-
-
-
-
-
PE4
TRACED1
-
TIM3_CH2
-
-
-
DFSDM1_
DATIN3
-
PE5
TRACED2
-
TIM3_CH3
-
-
-
DFSDM1_CKIN3
-
PE6
TRACED3
-
TIM3_CH4
-
-
-
-
-
PE7
-
TIM1_ETR
-
-
-
-
DFSDM1_
DATIN2
-
PE8
-
TIM1_CH1N
-
-
-
-
DFSDM1_CKIN2
-
PE9
-
TIM1_CH1
-
-
-
-
DFSDM1_
CKOUT
-
PE10
-
TIM1_CH2N
-
-
-
-
DFSDM1_
DATIN4
-
PE11
-
TIM1_CH2
-
-
-
-
DFSDM1_CKIN4
-
PE12
-
TIM1_CH3N
-
-
-
SPI1_NSS
DFSDM1_
DATIN5
-
PE13
-
TIM1_CH3
-
-
-
SPI1_SCK
DFSDM1_CKIN5
-
PE14
-
TIM1_CH4
TIM1_BKIN2
TIM1_BKIN2_
COMP2
-
SPI1_MISO
-
-
PE15
-
TIM1_BKIN
-
TIM1_BKIN_
COMP1
-
SPI1_MOSI
-
-
Port
DS10969 Rev 5
Port E
73/204
Pinouts and pin description
AF0
STM32L475xx
Table 17. Alternate function AF0 to AF7(1) (continued)
AF0
AF1
AF2
AF3
AF4
AF5
AF6
AF7
SYS_AF
TIM1/TIM2/
TIM5/TIM8/
LPTIM1
TIM1/TIM2/
TIM3/TIM4/
TIM5
TIM8
I2C1/I2C2/I2C3
SPI1/SPI2
SPI3/DFSDM
USART1/
USART2/
USART3
PH0
-
-
-
-
-
-
-
-
PH1
-
-
-
-
-
-
-
-
Port
Port H
Pinouts and pin description
74/204
Table 17. Alternate function AF0 to AF7(1) (continued)
1. Please refer to Table 18 for AF8 to AF15.
DS10969 Rev 5
STM32L475xx
AF9
AF10
AF11
AF12
AF13
AF14
AF15
UART4,
UART5,
LPUART1
CAN1, TSC
OTG_FS, QUADSPI
-
SDMMC1, COMP1,
COMP2, FMC,
SWPMI1
SAI1, SAI2
TIM2, TIM15,
TIM16, TIM17,
LPTIM2
EVENTOUT
PA0
UART4_TX
-
-
-
-
SAI1_EXTCLK
TIM2_ETR
EVENTOUT
PA1
UART4_RX
-
-
-
-
-
TIM15_CH1N
EVENTOUT
PA2
-
-
-
-
-
SAI2_EXTCLK
TIM15_CH1
EVENTOUT
PA3
-
-
-
-
-
-
TIM15_CH2
EVENTOUT
PA4
-
-
-
-
-
SAI1_FS_B
LPTIM2_OUT
EVENTOUT
PA5
-
-
-
-
-
-
LPTIM2_ETR
EVENTOUT
PA6
-
-
QUADSPI_BK1_IO3
-
TIM1_BKIN_
COMP2
TIM8_BKIN_
COMP2
TIM16_CH1
EVENTOUT
PA7
-
-
QUADSPI_BK1_IO2
-
-
-
TIM17_CH1
EVENTOUT
PA8
-
-
OTG_FS_SOF
-
-
-
LPTIM2_OUT
EVENTOUT
PA9
-
-
-
-
-
-
TIM15_BKIN
EVENTOUT
PA10
-
-
OTG_FS_ID
-
-
-
TIM17_BKIN
EVENTOUT
PA11
-
CAN1_RX
OTG_FS_DM
-
TIM1_BKIN2_
COMP1
-
-
EVENTOUT
PA12
-
CAN1_TX
OTG_FS_DP
-
-
-
-
EVENTOUT
PA13
-
-
OTG_FS_NOE
-
-
-
-
EVENTOUT
PA14
-
-
-
-
-
-
-
EVENTOUT
PA15
UART4_RTS
_DE
TSC_G3_IO1
-
-
-
SAI2_FS_B
-
EVENTOUT
Port
DS10969 Rev 5
Port A
75/204
Pinouts and pin description
AF8
STM32L475xx
Table 18. Alternate function AF8 to AF15(1)
AF9
AF10
AF11
AF12
AF13
AF14
AF15
UART4,
UART5,
LPUART1
CAN1, TSC
OTG_FS, QUADSPI
-
SDMMC1, COMP1,
COMP2, FMC,
SWPMI1
SAI1, SAI2
TIM2, TIM15,
TIM16, TIM17,
LPTIM2
EVENTOUT
PB0
-
-
QUADSPI_BK1_IO1
-
COMP1_OUT
-
-
EVENTOUT
PB1
-
-
QUADSPI_BK1_IO0
-
-
-
LPTIM2_IN1
EVENTOUT
PB2
-
-
-
-
-
-
-
EVENTOUT
PB3
-
-
-
-
-
SAI1_SCK_B
-
EVENTOUT
PB4
UART5_RTS
_DE
TSC_G2_IO1
-
-
-
SAI1_MCLK_
B
TIM17_BKIN
EVENTOUT
PB5
UART5_CTS
TSC_G2_IO2
-
-
COMP2_OUT
SAI1_SD_B
TIM16_BKIN
EVENTOUT
PB6
-
TSC_G2_IO3
-
-
TIM8_BKIN2_
COMP2
SAI1_FS_B
TIM16_CH1N
EVENTOUT
PB7
UART4_CTS
TSC_G2_IO4
-
-
FMC_NL
TIM8_BKIN_
COMP1
TIM17_CH1N
EVENTOUT
PB8
-
CAN1_RX
-
-
SDMMC1_D4
SAI1_MCLK_
A
TIM16_CH1
EVENTOUT
PB9
-
CAN1_TX
-
-
SDMMC1_D5
SAI1_FS_A
TIM17_CH1
EVENTOUT
PB10
LPUART1_
RX
-
QUADSPI_CLK
-
COMP1_OUT
SAI1_SCK_A
-
EVENTOUT
PB11
LPUART1_TX
-
QUADSPI_NCS
-
COMP2_OUT
-
-
EVENTOUT
PB12
LPUART1_
RTS_DE
TSC_G1_IO1
-
-
SWPMI1_IO
SAI2_FS_A
TIM15_BKIN
EVENTOUT
PB13
LPUART1_
CTS
TSC_G1_IO2
-
-
SWPMI1_TX
SAI2_SCK_A
TIM15_CH1N
EVENTOUT
PB14
-
TSC_G1_IO3
-
-
SWPMI1_RX
SAI2_MCLK_
A
TIM15_CH1
EVENTOUT
PB15
-
TSC_G1_IO4
-
-
SWPMI1_SUSPEND
SAI2_SD_A
TIM15_CH2
EVENTOUT
Port
DS10969 Rev 5
Port B
STM32L475xx
AF8
Pinouts and pin description
76/204
Table 18. Alternate function AF8 to AF15(1) (continued)
AF9
AF10
AF11
AF12
AF13
AF14
AF15
UART4,
UART5,
LPUART1
CAN1, TSC
OTG_FS, QUADSPI
-
SDMMC1, COMP1,
COMP2, FMC,
SWPMI1
SAI1, SAI2
TIM2, TIM15,
TIM16, TIM17,
LPTIM2
EVENTOUT
PC0
LPUART1_
RX
-
-
-
-
-
LPTIM2_IN1
EVENTOUT
PC1
LPUART1_TX
-
-
-
-
-
-
EVENTOUT
PC2
-
-
-
-
-
-
-
EVENTOUT
PC3
-
-
-
-
-
SAI1_SD_A
LPTIM2_ETR
EVENTOUT
PC4
-
-
-
-
-
-
-
EVENTOUT
PC5
-
-
-
-
-
-
-
EVENTOUT
PC6
-
TSC_G4_IO1
-
-
SDMMC1_D6
SAI2_MCLK_
A
-
EVENTOUT
PC7
-
TSC_G4_IO2
-
-
SDMMC1_D7
SAI2_MCLK_
B
-
EVENTOUT
PC8
-
TSC_G4_IO3
-
-
SDMMC1_D0
-
-
EVENTOUT
PC9
-
TSC_G4_IO4
OTG_FS_NOE
-
SDMMC1_D1
SAI2_EXTCLK
TIM8_BKIN2_
COMP1
EVENTOUT
PC10
UART4_TX
TSC_G3_IO2
-
-
SDMMC1_D2
SAI2_SCK_B
-
EVENTOUT
PC11
UART4_RX
TSC_G3_IO3
-
-
SDMMC1_D3
SAI2_MCLK_
B
-
EVENTOUT
PC12
UART5_TX
TSC_G3_IO4
-
-
SDMMC1_CK
SAI2_SD_B
-
EVENTOUT
PC13
-
-
-
-
-
-
-
EVENTOUT
PC14
-
-
-
-
-
-
-
EVENTOUT
PC15
-
-
-
-
-
-
-
EVENTOUT
Port
DS10969 Rev 5
Port C
77/204
Pinouts and pin description
AF8
STM32L475xx
Table 18. Alternate function AF8 to AF15(1) (continued)
AF8
AF9
AF10
AF11
AF12
AF13
AF14
AF15
UART4,
UART5,
LPUART1
CAN1, TSC
OTG_FS, QUADSPI
-
SDMMC1, COMP1,
COMP2, FMC,
SWPMI1
SAI1, SAI2
TIM2, TIM15,
TIM16, TIM17,
LPTIM2
EVENTOUT
PD0
-
CAN1_RX
-
-
FMC_D2
-
-
EVENTOUT
PD1
-
CAN1_TX
-
-
FMC_D3
-
-
EVENTOUT
PD2
UART5_RX
TSC_SYNC
-
-
SDMMC1_CMD
-
-
EVENTOUT
PD3
-
-
-
-
FMC_CLK
-
-
EVENTOUT
PD4
-
-
-
-
FMC_NOE
-
-
EVENTOUT
PD5
-
-
-
-
FMC_NWE
-
-
EVENTOUT
PD6
-
-
-
-
FMC_NWAIT
SAI1_SD_A
-
EVENTOUT
PD7
-
-
-
-
FMC_NE1
-
-
EVENTOUT
PD8
-
-
-
-
FMC_D13
-
-
EVENTOUT
PD9
-
-
-
-
FMC_D14
SAI2_MCLK_
A
-
EVENTOUT
PD10
-
TSC_G6_IO1
-
-
FMC_D15
SAI2_SCK_A
-
EVENTOUT
PD11
-
TSC_G6_IO2
-
-
FMC_A16
SAI2_SD_A
LPTIM2_ETR
EVENTOUT
PD12
-
TSC_G6_IO3
-
-
FMC_A17
SAI2_FS_A
LPTIM2_IN1
EVENTOUT
PD13
-
TSC_G6_IO4
-
-
FMC_A18
-
LPTIM2_OUT
EVENTOUT
PD14
-
-
-
-
FMC_D0
-
-
EVENTOUT
PD15
-
-
-
-
FMC_D1
-
-
EVENTOUT
Port
DS10969 Rev 5
Port D
Pinouts and pin description
78/204
Table 18. Alternate function AF8 to AF15(1) (continued)
STM32L475xx
AF9
AF10
AF11
AF12
AF13
AF14
AF15
UART4,
UART5,
LPUART1
CAN1, TSC
OTG_FS, QUADSPI
-
SDMMC1, COMP1,
COMP2, FMC,
SWPMI1
SAI1, SAI2
TIM2, TIM15,
TIM16, TIM17,
LPTIM2
EVENTOUT
PE0
-
-
-
-
FMC_NBL0
-
TIM16_CH1
EVENTOUT
PE1
-
-
-
-
FMC_NBL1
-
TIM17_CH1
EVENTOUT
PE2
-
TSC_G7_IO1
-
-
FMC_A23
SAI1_MCLK_
A
-
EVENTOUT
PE3
-
TSC_G7_IO2
-
-
FMC_A19
SAI1_SD_B
-
EVENTOUT
PE4
-
TSC_G7_IO3
-
-
FMC_A20
SAI1_FS_A
-
EVENTOUT
PE5
-
TSC_G7_IO4
-
-
FMC_A21
SAI1_SCK_A
-
EVENTOUT
PE6
-
-
-
-
FMC_A22
SAI1_SD_A
-
EVENTOUT
PE7
-
-
-
-
FMC_D4
SAI1_SD_B
-
EVENTOUT
PE8
-
-
-
-
FMC_D5
SAI1_SCK_B
-
EVENTOUT
PE9
-
-
-
-
FMC_D6
SAI1_FS_B
-
EVENTOUT
PE10
-
TSC_G5_IO1
QUADSPI_CLK
-
FMC_D7
SAI1_MCLK_
B
-
EVENTOUT
PE11
-
TSC_G5_IO2
QUADSPI_NCS
-
FMC_D8
-
-
EVENTOUT
PE12
-
TSC_G5_IO3
QUADSPI_BK1_IO0
-
FMC_D9
-
-
EVENTOUT
PE13
-
TSC_G5_IO4
QUADSPI_BK1_IO1
-
FMC_D10
-
-
EVENTOUT
PE14
-
-
QUADSPI_BK1_IO2
-
FMC_D11
-
-
EVENTOUT
PE15
-
-
QUADSPI_BK1_IO3
-
FMC_D12
-
-
EVENTOUT
PH0
-
-
-
-
-
-
-
EVENTOUT
PH1
-
-
-
-
-
-
-
EVENTOUT
Port
DS10969 Rev 5
Port E
Port H
1. Please refer to Table 17 for AF0 to AF7.
79/204
Pinouts and pin description
AF8
STM32L475xx
Table 18. Alternate function AF8 to AF15(1) (continued)
Memory mapping
5
STM32L475xx
Memory mapping
Figure 8. STM32L475xx memory map
0xFFFF FFFF
0xBFFF FFFF
Cortex™-M4
with FPU
Internal
Peripherals
7
Reserved
0xA000 1400
QUADSPI registers
0xA000 1000
FMC registers
0xA000 0000
0xE000 0000
0x5FFF FFFF
Reserved
6
0x5006 0C00
AHB2
0x4800 0000
Reserved
0xC000 0000
0x4002 4400
FMC and
QUADSPI
registers
5
AHB1
0x4002 0000
0x4001 6400
0xA000 0000
4
QUADSPI Flash
bank
0x4001 0000
FMC bank 3
0x4000 0000
0x9000 0000
Reserved
APB2
Reserved
0x4000 9800
APB1
0x1FFF FFFF
0x8000 0000
Reserved
0x1FFF F810
FMC bank 1 &
bank 2
3
Option Bytes
0x1FFF F800
Reserved
0x1FFF F000
System memory
0x6000 0000
0x1FFF 8000
Reserved
0x1FFF 7810
Options Bytes
2
0x1FFF 7800
Reserved
0x1FFF 7400
Peripherals
0x4000 0000
OTP area
0x1FFF 7000
System memory
1
0x1FFF 0000
SRAM1
0x2000 0000
Reserved
0x1000 8000
SRAM2
0x1000 0000
Reserved
0
CODE
0x0810 0000
Flash memory
0x0800 0000
0x0000 0000
0x0010 0000
Reserved
0x0000 0000
Reserved
Flash, system memory
or SRAM, depending on
BOOT configuration
MS34100V3
80/204
DS10969 Rev 5
STM32L475xx
Memory mapping
Table 19. STM32L475xx memory map and peripheral register boundary addresses(1)
Bus
AHB3
AHB2
-
AHB1
Boundary address
Size
(bytes)
Peripheral
0xA000 1000 - 0xA000 13FF
1 KB
QUADSPI
0xA000 0000 - 0xA000 0FFF
4 KB
FMC
0x5006 0800 - 0x5006 0BFF
1 KB
RNG
0x5004 0400 - 0x5006 07FF
129 KB
0x5004 0000 - 0x5004 03FF
1 KB
ADC
0x5000 0000 - 0x5003 FFFF
16 KB
OTG_FS
0x4800 2000 - 0x4FFF FFFF
~127 MB
Reserved
0x4800 1C00 - 0x4800 1FFF
1 KB
GPIOH
0x4800 1800 - 0x4800 1BFF
1 KB
GPIOG
0x4800 1400 - 0x4800 17FF
1 KB
GPIOF
0x4800 1000 - 0x4800 13FF
1 KB
GPIOE
0x4800 0C00 - 0x4800 0FFF
1 KB
GPIOD
0x4800 0800 - 0x4800 0BFF
1 KB
GPIOC
0x4800 0400 - 0x4800 07FF
1 KB
GPIOB
0x4800 0000 - 0x4800 03FF
1 KB
GPIOA
0x4002 4400 - 0x47FF FFFF
~127 MB
0x4002 4000 - 0x4002 43FF
1 KB
TSC
0x4002 3400 - 0x4002 3FFF
1 KB
Reserved
0x4002 3000 - 0x4002 33FF
1 KB
CRC
0x4002 2400 - 0x4002 2FFF
3 KB
Reserved
0x4002 2000 - 0x4002 23FF
1 KB
FLASH registers
0x4002 1400 - 0x4002 1FFF
3 KB
Reserved
0x4002 1000 - 0x4002 13FF
1 KB
RCC
0x4002 0800 - 0x4002 0FFF
2 KB
Reserved
0x4002 0400 - 0x4002 07FF
1 KB
DMA2
0x4002 0000 - 0x4002 03FF
1 KB
DMA1
DS10969 Rev 5
Reserved
Reserved
81/204
84
Memory mapping
STM32L475xx
Table 19. STM32L475xx memory map and peripheral register boundary addresses(1)
(continued)
Bus
APB2
APB2
Boundary address
Size
(bytes)
0x4001 6400 - 0x4001 FFFF
39 KB
Reserved
0x4001 6000 - 0x4000 63FF
1 KB
DFSDM1
0x4001 5C00 - 0x4000 5FFF
1 KB
Reserved
0x4001 5800 - 0x4000 5BFF
1 KB
SAI2
0x4001 5400 - 0x4000 57FF
1 KB
SAI1
0x4001 4C00 - 0x4000 53FF
2 KB
Reserved
0x4001 4800 - 0x4001 4BFF
1 KB
TIM17
0x4001 4400 - 0x4001 47FF
1 KB
TIM16
0x4001 4000 - 0x4001 43FF
1 KB
TIM15
0x4001 3C00 - 0x4001 3FFF
1 KB
Reserved
0x4001 3800 - 0x4001 3BFF
1 KB
USART1
0x4001 3400 - 0x4001 37FF
1 KB
TIM8
0x4001 3000 - 0x4001 33FF
1 KB
SPI1
0x4001 2C00 - 0x4001 2FFF
1 KB
TIM1
0x4001 2800 - 0x4001 2BFF
1 KB
SDMMC1
0x4001 2000 - 0x4001 27FF
2 KB
Reserved
0x4001 1C00 - 0x4001 1FFF
1 KB
FIREWALL
0x4001 0800- 0x4001 1BFF
5 KB
Reserved
0x4001 0400 - 0x4001 07FF
1 KB
EXTI
0x4001 0200 - 0x4001 03FF
0x4001 0030 - 0x4001 01FF
0x4001 0000 - 0x4001 002F
82/204
Peripheral
DS10969 Rev 5
COMP
1 KB
VREFBUF
SYSCFG
STM32L475xx
Memory mapping
Table 19. STM32L475xx memory map and peripheral register boundary addresses(1)
(continued)
Bus
APB1
Boundary address
Size
(bytes)
Peripheral
0x4000 9800 - 0x4000 FFFF
26 KB
Reserved
0x4000 9400 - 0x4000 97FF
1 KB
LPTIM2
0x4000 8C00 - 0x4000 93FF
2 KB
Reserved
0x4000 8800 - 0x4000 8BFF
1 KB
SWPMI1
0x4000 8400 - 0x4000 87FF
1 KB
Reserved
0x4000 8000 - 0x4000 83FF
1 KB
LPUART1
0x4000 7C00 - 0x4000 7FFF
1 KB
LPTIM1
0x4000 7800 - 0x4000 7BFF
1 KB
OPAMP
0x4000 7400 - 0x4000 77FF
1 KB
DAC1
0x4000 7000 - 0x4000 73FF
1 KB
PWR
0x4000 6800 - 0x4000 6FFF
1 KB
Reserved
0x4000 6400 - 0x4000 67FF
1 KB
CAN1
0x4000 6000 - 0x4000 63FF
1 KB
Reserved
0x4000 5C00- 0x4000 5FFF
1 KB
I2C3
0x4000 5800 - 0x4000 5BFF
1 KB
I2C2
0x4000 5400 - 0x4000 57FF
1 KB
I2C1
0x4000 5000 - 0x4000 53FF
1 KB
UART5
0x4000 4C00 - 0x4000 4FFF
1 KB
UART4
0x4000 4800 - 0x4000 4BFF
1 KB
USART3
0x4000 4400 - 0x4000 47FF
1 KB
USART2
DS10969 Rev 5
83/204
84
Memory mapping
STM32L475xx
Table 19. STM32L475xx memory map and peripheral register boundary addresses(1)
(continued)
Bus
APB1
Boundary address
Peripheral
0x4000 4000 - 0x4000 43FF
1 KB
Reserved
0x4000 3C00 - 0x4000 3FFF
1 KB
SPI3
0x4000 3800 - 0x4000 3BFF
1 KB
SPI2
0x4000 3400 - 0x4000 37FF
1 KB
Reserved
0x4000 3000 - 0x4000 33FF
1 KB
IWDG
0x4000 2C00 - 0x4000 2FFF
1 KB
WWDG
0x4000 2800 - 0x4000 2BFF
1 KB
RTC
0x4000 1800 - 0x4000 27FF
4 KB
Reserved
0x4000 1400 - 0x4000 17FF
1 KB
TIM7
0x4000 1000 - 0x4000 13FF
1 KB
TIM6
0x4000 0C00- 0x4000 0FFF
1 KB
TIM5
0x4000 0800 - 0x4000 0BFF
1 KB
TIM4
0x4000 0400 - 0x4000 07FF
1 KB
TIM3
0x4000 0000 - 0x4000 03FF
1 KB
TIM2
1. The gray color is used for reserved boundary addresses.
84/204
Size
(bytes)
DS10969 Rev 5
STM32L475xx
Electrical characteristics
6
Electrical characteristics
6.1
Parameter conditions
Unless otherwise specified, all voltages are referenced to VSS.
6.1.1
Minimum and maximum values
Unless otherwise specified, the minimum and maximum values are guaranteed in the worst
conditions of ambient temperature, supply voltage and frequencies by tests in production on
100% of the devices with an ambient temperature at TA = 25 °C and TA = TAmax (given by
the selected temperature range).
Data based on characterization results, design simulation and/or technology characteristics
are indicated in the table footnotes and are not tested in production. Based on
characterization, the minimum and maximum values refer to sample tests and represent the
mean value plus or minus three times the standard deviation (mean ±3σ).
6.1.2
Typical values
Unless otherwise specified, typical data are based on TA = 25 °C, VDD = VDDA = 3 V. They
are given only as design guidelines and are not tested.
Typical ADC accuracy values are determined by characterization of a batch of samples from
a standard diffusion lot over the full temperature range, where 95% of the devices have an
error less than or equal to the value indicated (mean ±2σ).
6.1.3
Typical curves
Unless otherwise specified, all typical curves are given only as design guidelines and are
not tested.
6.1.4
Loading capacitor
The loading conditions used for pin parameter measurement are shown in Figure 9.
6.1.5
Pin input voltage
The input voltage measurement on a pin of the device is described in Figure 10.
Figure 9. Pin loading conditions
Figure 10. Pin input voltage
MCU pin
MCU pin
C = 50 pF
VIN
MS19210V1
DS10969 Rev 5
MS19211V1
85/204
190
Electrical characteristics
6.1.6
STM32L475xx
Power supply scheme
Figure 11. Power supply scheme
VBAT
Backup circuitry
(LSE, RTC,
Backup registers)
1.55 – 3.6 V
Power switch
VDD
VCORE
n x VDD
Regulator
OUT
n x 100 nF
GPIOs
IN
+1 x 4.7 μF
Level shifter
VDDIO1
IO
logic
Kernel logic
(CPU, Digital
& Memories)
n x VSS
VDDA
VDDA
VREF
10 nF
+1 μF
100 nF +1 μF
VREF+
VREF-
ADCs/
DACs/
OPAMPs/
COMPs/
VREFBUF
VSSA
MSv40913V1
Caution:
86/204
Each power supply pair (VDD/VSS, VDDA/VSSA etc.) must be decoupled with filtering ceramic
capacitors as shown above. These capacitors must be placed as close as possible to, or
below, the appropriate pins on the underside of the PCB to ensure the good functionality of
the device.
DS10969 Rev 5
STM32L475xx
6.1.7
Electrical characteristics
Current consumption measurement
Figure 12. Current consumption measurement scheme
IDD_USB
VDDUSB
IDD_VBAT
VBAT
IDD
VDD
IDDA
VDDA
MSv40912V1
6.2
Absolute maximum ratings
Stresses above the absolute maximum ratings listed in Table 20: Voltage characteristics,
Table 21: Current characteristics and Table 22: Thermal characteristics may cause
permanent damage to the device. These are stress ratings only and functional operation of
the device at these conditions is not implied. Exposure to maximum rating conditions for
extended periods may affect device reliability. Device mission profile (application conditions)
is compliant with JEDEC JESD47 qualification standard, extended mission profiles are
available on demand.
Table 20. Voltage characteristics(1)
Symbol
VDDX - VSS
VIN(2)
Ratings
Min
Max
Unit
-0.3
4.0
V
Input voltage on FT_xxx pins
VSS-0.3
min (VDD, VDDA, VDDUSB)
+ 4.0(3)(4)
Input voltage on TT_xx pins
VSS-0.3
4.0
Input voltage on BOOT0 pin
VSS
9.0
VSS-0.3
4.0
External main supply voltage (including
VDD, VDDA, VDDUSB, VBAT)
Input voltage on any other pins
DS10969 Rev 5
V
87/204
190
Electrical characteristics
STM32L475xx
Table 20. Voltage characteristics(1) (continued)
Symbol
|∆VDDx|
|VSSx-VSS|
Ratings
Min
Max
Unit
Variations between different VDDX power
pins of the same domain
-
50
mV
Variations between all the different ground
pins(5)
-
50
mV
1. All main power (VDD, VDDA, VDDUSB, VBAT) and ground (VSS, VSSA) pins must always be connected to the external power
supply, in the permitted range.
2. VIN maximum must always be respected. Refer to Table 21: Current characteristics for the maximum allowed injected
current values.
3. This formula has to be applied only on the power supplies related to the IO structure described in the pin definition table.
4. To sustain a voltage higher than 4 V the internal pull-up/pull-down resistors must be disabled.
5. Include VREF- pin.
Table 21. Current characteristics
Symbol
Ratings
Max
∑IVDD
Total current into sum of all VDD power lines (source)(1)
150
∑IVSS
Total current out of sum of all VSS ground lines (sink)
(1)
150
IVDD(PIN)
Maximum current into each VDD power pin (source)(1)
100
IVSS(PIN)
Maximum current out of each VSS ground pin (sink)(1)
100
Output current sunk by any I/O and control pin except FT_f
20
Output current sunk by any FT_f pin
20
Output current sourced by any I/O and control pin
20
IIO(PIN)
∑IIO(PIN)
IINJ(PIN)(3)
∑|IINJ(PIN)|
Total output current sunk by sum of all I/Os and control pins(2)
Unit
mA
100
(2)
Total output current sourced by sum of all I/Os and control pins
Injected current on FT_xxx, TT_xx, RST and B pins, except PA4,
PA5
100
-5/+0(4)
Injected current on PA4, PA5
-5/0
Total injected current (sum of all I/Os and control pins)(5)
25
1. All main power (VDD, VDDA, VDDUSB, VBAT) and ground (VSS, VSSA) pins must always be connected to the external power
supplies, in the permitted range.
2. This current consumption must be correctly distributed over all I/Os and control pins. The total output current must not be
sunk/sourced between two consecutive power supply pins referring to high pin count QFP packages.
3. Positive injection (when VIN > VDDIOx) is not possible on these I/Os and does not occur for input voltages lower than the
specified maximum value.
4. A negative injection is induced by VIN < VSS. IINJ(PIN) must never be exceeded. Refer also to Table 20: Voltage
characteristics for the minimum allowed input voltage values.
5. When several inputs are submitted to a current injection, the maximum ∑|IINJ(PIN)| is the absolute sum of the negative
injected currents (instantaneous values).
88/204
DS10969 Rev 5
STM32L475xx
Electrical characteristics
Table 22. Thermal characteristics
Symbol
TSTG
TJ
Ratings
Storage temperature range
Maximum junction temperature
DS10969 Rev 5
Value
Unit
–65 to +150
°C
150
°C
89/204
190
Electrical characteristics
STM32L475xx
6.3
Operating conditions
6.3.1
General operating conditions
Table 23. General operating conditions
Symbol
Parameter
Conditions
Min
Max
fHCLK
Internal AHB clock frequency
-
0
80
fPCLK1
Internal APB1 clock frequency
-
0
80
fPCLK2
Internal APB2 clock frequency
-
0
80
Standard operating voltage
-
VDD
VDDA
Analog supply voltage
1.71
VBAT
VDDUSB USB supply voltage
TJ
1.55
3.6
V
3.0
3.6
0
3.6
-0.3
VDDIOx+0.3
0
9
-0.3
Min(Min(VDD, VDDA,
VDDUSB)+3.6 V,
5.5 V)(2)(3)
1.8
VREFBUF used
2.4
USB used
USB not used
0
I/O input voltage
All I/O except BOOT0 and TT_xx
TA
V
DAC or OPAMP used
BOOT0
PD
3.6
1.62
TT_xx I/O
VIN
V
ADC or COMP used
Backup operating voltage
Power dissipation at
TA = 85 °C for suffix 6
or
TA = 105 °C for suffix 7(4)
LQFP100
-
-
476
LQFP64
-
-
444
Ambient temperature for the
suffix 6 version
Maximum power dissipation
–40
85
Low-power dissipation(5)
–40
105
Ambient temperature for the
suffix 7 version
Maximum power dissipation
–40
105
Low-power dissipation
–40
125
Ambient temperature for the
suffix 3 version
Maximum power dissipation
–40
125
Low-power dissipation(5)
–40
130
Suffix 6 version
–40
105
Suffix 7 version
–40
125
Suffix 3 version
–40
130
Junction temperature range
(5)
MHz
3.6
(1)
ADC, DAC, OPAMP, COMP,
VREFBUF not used
Unit
V
V
mW
1. When RESET is released functionality is guaranteed down to VBOR0 Min.
2. This formula has to be applied only on the power supplies related to the IO structure described by the pin definition table.
Maximum I/O input voltage is the smallest value between Min(VDD, VDDA, VDDUSB)+3.6 V and 5.5V.
3. For operation with voltage higher than Min (VDD, VDDA, VDDUSB) +0.3 V, the internal Pull-up and Pull-Down resistors must
be disabled.
90/204
DS10969 Rev 5
°C
°C
STM32L475xx
Electrical characteristics
4. If TA is lower, higher PD values are allowed as long as TJ does not exceed TJmax (see Section 7.3: Thermal characteristics).
5. In low-power dissipation state, TA can be extended to this range as long as TJ does not exceed TJmax (see Section 7.3:
Thermal characteristics).
6.3.2
Operating conditions at power-up / power-down
The parameters given in Table 24 are derived from tests performed under the ambient
temperature condition summarized in Table 23.
Table 24. Operating conditions at power-up / power-down
Symbol
Parameter
Conditions
VDD rise time rate
tVDD
VDDA rise time rate
0
∞
10
∞
0
∞
10
∞
0
∞
10
∞
-
VDDA fall time rate
VDDUSB rise time rate
tVDDUSB
Max
-
VDD fall time rate
tVDDA
Min
-
VDDUSB fall time rate
Unit
µs/V
µs/V
µs/V
The requirements for power-up/down sequence specified in Section 3.9.1: Power supply
schemes must be respected.
6.3.3
Embedded reset and power control block characteristics
The parameters given in Table 25 are derived from tests performed under the ambient
temperature conditions summarized in Table 23: General operating conditions.
Table 25. Embedded reset and power control block characteristics
Symbol
tRSTTEMPO(2)
Parameter
Reset temporization after
BOR0 is detected
VBOR0(2)
Brown-out reset threshold 0
VBOR1
Brown-out reset threshold 1
VBOR2
Brown-out reset threshold 2
VBOR3
Brown-out reset threshold 3
VBOR4
Brown-out reset threshold 4
VPVD0
Programmable voltage
detector threshold 0
Conditions(1)
Min
Typ
Max
Unit
-
250
400
μs
Rising edge
1.62
1.66
1.7
Falling edge
1.6
1.64
1.69
Rising edge
2.06
2.1
2.14
Falling edge
1.96
2
2.04
Rising edge
2.26
2.31
2.35
Falling edge
2.16
2.20
2.24
Rising edge
2.56
2.61
2.66
Falling edge
2.47
2.52
2.57
Rising edge
2.85
2.90
2.95
Falling edge
2.76
2.81
2.86
Rising edge
2.1
2.15
2.19
Falling edge
2
2.05
2.1
VDD rising
DS10969 Rev 5
V
V
V
V
V
V
91/204
190
Electrical characteristics
STM32L475xx
Table 25. Embedded reset and power control block characteristics (continued)
Conditions(1)
Min
Typ
Max
Rising edge
2.26
2.31
2.36
Falling edge
2.15
2.20
2.25
Rising edge
2.41
2.46
2.51
Falling edge
2.31
2.36
2.41
Rising edge
2.56
2.61
2.66
Falling edge
2.47
2.52
2.57
Rising edge
2.69
2.74
2.79
Falling edge
2.59
2.64
2.69
Rising edge
2.85
2.91
2.96
Falling edge
2.75
2.81
2.86
Rising edge
2.92
2.98
3.04
Falling edge
2.84
2.90
2.96
Hysteresis in
continuous
Hysteresis voltage of BORH0 mode
-
20
-
Hysteresis in
other mode
-
30
-
Symbol
Parameter
VPVD1
PVD threshold 1
VPVD2
PVD threshold 2
VPVD3
PVD threshold 3
VPVD4
PVD threshold 4
VPVD5
PVD threshold 5
VPVD6
PVD threshold 6
Vhyst_BORH0
Unit
V
V
V
V
V
V
mV
Hysteresis voltage of BORH
(except BORH0) and PVD
-
-
100
-
mV
BOR(3) (except BOR0) and
IDD
(2)
(BOR_PVD)
PVD consumption from VDD
-
-
1.1
1.6
µA
-
1.18
1.22
1.26
V
Vhyst_BOR_PVD
VPVM1
VDDUSB peripheral voltage
monitoring
VPVM3
VDDA peripheral voltage
monitoring
Rising edge
1.61
1.65
1.69
Falling edge
1.6
1.64
1.68
VPVM4
VDDA peripheral voltage
monitoring
Rising edge
1.78
1.82
1.86
Falling edge
1.77
1.81
1.85
V
V
Vhyst_PVM3
PVM3 hysteresis
-
-
10
-
mV
Vhyst_PVM4
PVM4 hysteresis
-
-
10
-
mV
IDD
PVM1 and PVM2
(PVM1/PVM2)
consumption from VDD
(2)
-
-
0.2
-
µA
IDD
PVM3 and PVM4
(PVM3/PVM4)
consumption from VDD
(2)
-
-
2
-
µA
1. Continuous mode means Run/Sleep modes, or temperature sensor enable in Low-power run/Low-power
sleep modes.
2. Guaranteed by design.
3. BOR0 is enabled in all modes (except shutdown) and its consumption is therefore included in the supply
current characteristics tables.
92/204
DS10969 Rev 5
STM32L475xx
6.3.4
Electrical characteristics
Embedded voltage reference
The parameters given in Table 26 are derived from tests performed under the ambient
temperature and supply voltage conditions summarized in Table 23: General operating
conditions.
Table 26. Embedded internal voltage reference
Symbol
VREFINT
Parameter
Internal reference voltage
Conditions
–40 °C < TA < +130 °C
Min
Typ
Max
Unit
1.182
1.212
1.232
V
tS_vrefint (1)
ADC sampling time when
reading the internal reference
voltage
-
4(2)
-
-
µs
tstart_vrefint
Start time of reference voltage
buffer when ADC is enable
-
-
8
12(2)
µs
-
-
12.5
20(2)
µA
VREFINT buffer consumption
from VDD when converted by
IDD(VREFINTBUF)
ADC
Internal reference voltage
spread over the temperature
range
VDD = 3 V
-
5
7.5(2)
mV
TCoeff
Average temperature
coefficient
–40°C < TA < +130°C
-
30
50(2)
ppm/°C
ACoeff
Long term stability
1000 hours, T = 25°C
-
300
1000(2)
ppm
-
250
1200(2)
ppm/V
24
25
26
49
50
51
74
75
76
∆VREFINT
VDDCoeff
Average voltage coefficient
VREFINT_DIV1
1/4 reference voltage
VREFINT_DIV2
1/2 reference voltage
VREFINT_DIV3
3/4 reference voltage
3.0 V < VDD < 3.6 V
-
%
VREFINT
1. The shortest sampling time can be determined in the application by multiple iterations.
2. Guaranteed by design.
DS10969 Rev 5
93/204
190
Electrical characteristics
STM32L475xx
Figure 13. VREFINT versus temperature
V
1.235
1.23
1.225
1.22
1.215
1.21
1.205
1.2
1.195
1.19
1.185
-40
-20
0
20
40
Mean
60
Min
80
100
120
°C
Max
MSv40169V1
94/204
DS10969 Rev 5
STM32L475xx
6.3.5
Electrical characteristics
Supply current characteristics
The current consumption is a function of several parameters and factors such as the
operating voltage, ambient temperature, I/O pin loading, device software configuration,
operating frequencies, I/O pin switching rate, program location in memory and executed
binary code.
The current consumption is measured as described in Figure 12: Current consumption
measurement scheme.
The IDD_ALL parameters given in Table 27 to Table 39 represent the total MCU consumption
including the current supplying VDD , VDDA, VDDUSB and VBAT.
Typical and maximum current consumption
The MCU is placed under the following conditions:
•
All I/O pins are in analog input mode
•
All peripherals are disabled except when explicitly mentioned
•
The Flash memory access time is adjusted with the minimum wait states number,
depending on the fHCLK frequency (refer to the table “Number of wait states according
to CPU clock (HCLK) frequency” available in the RM0351 reference manual).
•
When the peripherals are enabled fPCLK = fHCLK
The parameters given in Table 27 to Table 40 are derived from tests performed under
ambient temperature and supply voltage conditions summarized in Table 23: General
operating conditions.
DS10969 Rev 5
95/204
190
Conditions
Symbol
Parameter
-
Voltage
scaling
DS10969 Rev 5
IDD_ALL
(LPRun)
Unit
55 °C
85 °C
3.20
3.37
3.51
3.93
4.76
2.49
2.01
2.16
2.30
2.72
3.34
1.29
1.62
1.10
1.17
1.31
1.73
2.56
0.69
0.85
1.18
0.61
0.70
0.89
1.24
1.95
0.37
0.47
0.64
0.96
0.37
0.46
0.64
0.98
1.71
0.23
0.26
0.36
0.53
0.85
0.27
0.33
0.50
0.86
1.57
100 kHz
0.14
0.17
0.27
0.43
0.75
0.17
0.21
0.38
0.74
1.44
80 MHz
10.2
10.3
10.5
10.7
11.1
11.22
11.8
12.1
12.5
13.3
72 MHz
9.24
9.31
9.47
9.69
10.1
10.16
10.7
11.0
11.4
12.2
64 MHz
8.25
8.32
8.46
8.68
9.09
9.08
9.6
9.9
10.3
11.1
Range 1 48 MHz
6.28
6.35
6.5
6.72
7.11
6.91
7.3
7.6
8.0
8.8
32 MHz
4.24
4.30
4.44
4.65
5.04
4.66
4.97
5.26
5.67
6.51
24 MHz
3.21
3.27
3.4
3.61
3.98
3.53
3.76
4.05
4.46
5.30
16 MHz
2.19
2.24
2.36
2.56
2.94
2.41
2.66
2.95
3.16
3.99
2 MHz
272
303
413
592
958
330
393
579
954
1704
1 MHz
154
184
293
473
835
195
265
457
822
1572
400 kHz
78
108
217
396
758
110
180
380
755
1505
100 kHz
42
73
182
360
723
75
138
331
706
1456
Range 2
IDD_ALL
(Run)
MAX(1)
TYP
fHCLK = fHSE up to
48MHz included,
Supply
bypass mode
current in
PLL ON above
Run mode
48 MHz all
peripherals disable
Supply
current in fHCLK = fMSI
Low-power all peripherals disable
run mode
25 °C 55 °C
85 °C
26 MHz
2.88
2.93
3.05
3.23
3.58
16 MHz
1.83
1.87
1.98
2.16
8 MHz
0.98
1.02
1.12
4 MHz
0.55
0.59
2 MHz
0.34
1 MHz
fHCLK
105 °C 125 °C
mA
µA
STM32L475xx
1. Guaranteed by characterization results, unless otherwise specified.
105 °C 125 °C 25 °C
Electrical characteristics
96/204
Table 27. Current consumption in Run and Low-power run modes, code with data processing
running from Flash, ART enable (Cache ON Prefetch OFF)
Conditions
Symbol
Parameter
-
Voltage
scaling
Range 2
IDD_ALL
(Run)
DS10969 Rev 5
IDD_ALL
(LPRun)
fHCLK = fHSE up to
48MHz included,
Supply
bypass mode
current in
PLL ON above
Run mode
48 MHz all
peripherals disable
MAX(1)
TYP
Unit
25 °C 55 °C
85 °C
26 MHz
3.15
3.19
3.31
3.50
3.85
16 MHz
2.24
2.28
2.39
2.57
8 MHz
1.26
1.29
1.40
1.57
4 MHz
0.71
0.75
0.85
2 MHz
0.42
0.45
1 MHz
0.27
0.30
100 kHz
0.14
80 MHz
10.0
fHCLK
105 °C 125 °C 25 °C
55 °C
85 °C
105 °C 125 °C
3.47
3.70
3.84
4.26
4.88
2.90
2.46
2.60
2.74
3.16
3.78
1.89
1.40
1.50
1.64
2.06
2.68
1.02
1.34
0.79
0.88
1.06
1.38
2.21
0.55
0.72
1.04
0.46
0.55
0.73
1.09
1.88
0.40
0.57
0.89
0.30
0.38
0.57
0.90
1.61
0.17
0.27
0.43
0.75
0.17
0.22
0.40
0.74
1.44
10.1
10.3
10.6
11.0
11.00
11.35
11.64
12.26
13.10
72 MHz
9.06
9.13
9.28
9.51
9.92
9.97
10.36
10.65
11.06
11.69
64 MHz
8.96
9.04
9.22
9.48
9.92
9.86
10.25
10.54
10.95
11.79
Range 1 48 MHz
7.64
7.72
7.91
8.17
8.62
8.40
8.76
8.90
9.52
10.36
32 MHz
5.49
5.57
5.74
5.98
6.40
6.04
6.40
6.69
7.10
7.94
24 MHz
4.16
4.22
4.36
4.57
4.96
4.60
4.86
5.15
5.56
6.19
16 MHz
2.93
2.99
3.13
3.35
3.75
3.22
3.43
3.72
4.13
4.97
2 MHz
358
392
503
683
1050
435
501
694
1069
1819
1 MHz
197
230
340
519
880
245
312
512
887
1637
400 kHz
97
126
235
414
778
130
202
402
777
1527
100 kHz
47
77
186
365
726
85
147
347
711
1472
Supply
current in fHCLK = fMSI
Low-power all peripherals disable
run
mA
µA
97/204
Electrical characteristics
1. Guaranteed by characterization results, unless otherwise specified.
STM32L475xx
Table 28. Current consumption in Run and Low-power run modes, code with data processing
running from Flash, ART disable
Conditions
Symbol
Parameter
-
Voltage
scaling
Range 2
IDD_ALL
(Run)
Supply
current in
Run mode
DS10969 Rev 5
fHCLK = fHSE up to
48MHz included,
bypass mode
PLL ON above
48 MHz all
peripherals disable
Range 1
IDD_ALL
(LPRun)
Supply
current in
low-power
run mode
fHCLK = fMSI
all peripherals disable
FLASH in power-down
MAX(1)
TYP
fHCLK
25 °C
55 °C
85 °C
105
°C
125
°C
25 °C
55 °C
85 °C
105
°C
125
°C
26 MHz
2.88
2.94
3.05
3.23
3.58
3.18
3.26
3.40
4.02
4.65
16 MHz
1.83
1.87
1.98
2.15
2.50
2.01
2.16
2.30
2.72
3.34
8 MHz
0.97
1.00
1.11
1.27
1.62
1.07
1.16
1.32
1.73
2.36
4 MHz
0.54
0.57
0.67
0.84
1.18
0.59
0.69
0.88
1.23
1.96
2 MHz
0.33
0.36
0.46
0.62
0.96
0.37
0.45
0.63
0.98
1.70
1 MHz
0.22
0.25
0.35
0.51
0.85
0.25
0.33
0.50
0.86
1.57
100 kHz
0.12
0.15
0.25
0.41
0.75
0.15
0.21
0.39
0.74
1.45
80 MHz
10.2
10.3
10.5
10.7
11.1
11.22
11.57
11.86
12.07
13.11
72 MHz
9.25
9.31
9.46
9.68
10.1
10.18
10.41
10.55
10.76
11.80
64 MHz
8.25
8.31
8.46
8.67
9.08
9.08
9.37
9.66
9.87
10.91
48 MHz
6.26
6.33
6.48
6.69
7.11
6.89
7.11
7.25
7.67
8.50
32 MHz
4.22
4.28
4.42
4.63
5.03
4.64
4.86
5.15
5.56
6.19
24 MHz
3.20
3.25
3.38
3.59
3.99
3.52
3.70
3.84
4.26
5.09
16 MHz
2.18
2.22
2.35
2.55
2.94
2.40
2.55
2.84
3.25
4.09
2 MHz
242
275
384
562
924
300
380
573
927
1677
1 MHz
130
162
269
445
809
180
243
435
810
1560
400 kHz
61
90
197
374
734
95
160
353
728
1478
100 kHz
26
56
163
339
702
55
122
314
679
1429
Unit
Electrical characteristics
98/204
Table 29. Current consumption in Run and Low-power run modes, code with data processing
running from SRAM1
mA
µA
1. Guaranteed by characterization results, unless otherwise specified.
STM32L475xx
STM32L475xx
Electrical characteristics
Table 30. Typical current consumption in Run and Low-power run modes, with different codes
running from Flash, ART enable (Cache ON Prefetch OFF)
Conditions
-
IDD_ALL
(Run)
Supply
current in
Run mode
fHCLK = fHSE up
to 48 MHz
included, bypass
mode PLL ON
above 48 MHz
all peripherals
disable
Code
25 °C
Reduced code(1)
2.9
111
Coremark
3.1
118
Dhrystone 2.1
3.1
Fibonacci
2.9
112
2.8
108
Reduced code
10.2
127
Coremark
10.9
136
Dhrystone 2.1
11.0
Fibonacci
10.5
131
9.9
124
Reduced code
272
136
Coremark
291
145
Dhrystone 2.1
302
Fibonacci
269
135
While(1)
269
135
While(1)
(1)
Supply
current in fHCLK = fMSI = 2 MHz
Low-power all peripherals disable
run
Unit
25 °C
While(1)
(1)
IDD_ALL
(LPRun)
TYP
Unit
Voltage
scaling
Range 2
fHCLK = 26 MHz
Parameter
Range 1
fHCLK = 80 MHz
Symbol
TYP
mA
mA
µA
119
137
151
µA/MHz
µA/MHz
µA/MHz
1. Reduced code used for characterization results provided in Table 27, Table 28, Table 29.
Table 31. Typical current consumption in Run and Low-power run modes, with different codes
running from Flash, ART disable
Conditions
Parameter
-
IDD_ALL
(Run)
Supply
current in
Run mode
fHCLK = fHSE up to
48 MHz included,
bypass mode
PLL ON above
48 MHz
all peripherals
disable
Voltage
scaling
Range 1
Range 2
fHCLK = 80 MHz fHCLK = 26 MHz
Symbol
TYP
TYP
Unit
Code
Unit
25 °C
25 °C
Reduced code(1)
3.1
119
Coremark
2.9
Dhrystone 2.1
2.8
Fibonacci
2.7
104
While(1)
2.6
100
10.0
125
9.4
117
Reduced
code(1)
Coremark
111
mA
mA
111
Dhrystone 2.1
9.1
Fibonacci
9.0
112
While(1)
9.3
116
DS10969 Rev 5
114
µA/MHz
µA/MHz
99/204
190
Electrical characteristics
STM32L475xx
Table 31. Typical current consumption in Run and Low-power run modes, with different codes
running from Flash, ART disable (continued)
Conditions
Symbol
Parameter
-
TYP
Unit
Voltage
scaling
Code
Reduced code(1)
IDD_ALL
(LPRun)
Supply
current in fHCLK = fMSI = 2 MHz
Low-power all peripherals disable
run
TYP
Unit
25 °C
25 °C
358
179
Coremark
392
Dhrystone 2.1
390
196
Fibonacci
385
192
While(1)
385
192
µA
195
µA/MHz
1. Reduced code used for characterization results provided in Table 27, Table 28, Table 29.
Table 32. Typical current consumption in Run and Low-power run modes, with different codes
running from SRAM1
Conditions
Parameter
-
IDD_ALL
(Run)
fHCLK = fHSE up to
48 MHz included,
Supply
bypass mode
current in PLL ON above
Run mode 48 MHz all
peripherals
disable
Voltage
scaling
Range 1
Range 2
fHCLK = 80 MHz fHCLK = 26 MHz
Symbol
TYP
Unit
Code
IDD_ALL
(LPRun)
25 °C
Reduced code(1)
2.9
111
Coremark
2.9
111
mA
Dhrystone 2.1
2.9
Fibonacci
2.6
100
While(1)
2.6
100
Reduced code(1)
10.2
127
Coremark
10.4
Dhrystone 2.1
10.3
111
129
9.6
120
While(1)
9.3
116
242
121
code(1)
Coremark
242
Dhrystone 2.1
242
µA/MHz
121
µA
121
Fibonacci
225
112
While(1)
242
121
DS10969 Rev 5
µA/MHz
130
mA
Fibonacci
1. Reduced code used for characterization results provided in Table 27, Table 28, Table 29.
100/204
Unit
25 °C
Reduced
Supply
current in fHCLK = fMSI = 2 MHz
Low-power all peripherals disable
run
TYP
µA/MHz
Conditions
Symbol
Parameter
-
Voltage
scaling
Unit
fHCLK
26 MHz
IDD_ALL
(Sleep)
DS10969 Rev 5
IDD_ALL
(LPSleep)
25 °C 55 °C
85 °C
0.92
1.07
0.96
105 °C 125 °C 25 °C
1.25
1.59
1.012
55 °C
85 °C
1.14
1.36
105 °C 125 °C
1.77
2.40
16 MHz
0.61
0.65
0.75
0.92
1.27
0.69
0.78
0.97
1.32
2.04
8 MHz
0.36
0.40
0.50
0.66
1.01
0.42
0.50
0.68
1.03
1.75
4 MHz
0.24
0.27
0.37
0.53
0.87
0.28
0.36
0.54
0.89
1.60
2 MHz
0.18
0.20
0.30
0.47
0.81
0.215
0.29
0.46
0.82
1.53
1 MHz
0.15
0.17
0.27
0.43
0.77
0.18
0.25
0.44
0.78
1.49
100 kHz
0.12
0.14
0.24
0.41
0.74
0.15
0.21
0.39
0.74
1.44
80 MHz
2.96
3.00
3.13
3.33
3.73
3.26
3.43
3.72
4.13
4.97
72 MHz
2.69
2.73
2.85
3.05
3.45
2.96
3.21
3.50
3.71
4.54
64 MHz
2.41
2.45
2.58
2.77
3.17
2.65
2.88
3.17
3.58
4.21
Range 1 48 MHz
1.88
1.93
2.07
2.27
2.67
2.10
2.27
2.41
2.83
3.66
32 MHz
1.30
1.35
1.48
1.68
2.08
1.43
1.56
1.85
2.26
3.10
24 MHz
1.01
1.05
1.17
1.37
1.76
1.11
1.23
1.52
1.93
2.77
16 MHz
0.71
0.75
0.87
1.07
1.45
0.80
0.90
1.19
1.60
2.44
2 MHz
96
126
233
412
775
130
202
402
777
1527
1 MHz
65
94
202
381
742
95
166
358
733
1483
400 kHz
43
73
181
359
718
75
138
331
706
1456
100 kHz
33
63
171
348
708
65
128
322
691
1441
Range 2
Supply
current in
sleep
mode,
MAX(1)
TYP
fHCLK = fHSE up
to 48 MHz
included, bypass
mode
PLL ON above
48 MHz all
peripherals
disable
Supply
current in
=f
f
low-power HCLK MSI
all peripherals disable
sleep
mode
mA
µA
101/204
Electrical characteristics
1. Guaranteed by characterization results, unless otherwise specified.
STM32L475xx
Table 33. Current consumption in Sleep and Low-power sleep modes, Flash ON
Conditions
Symbol
Parameter
Voltage
scaling
-
IDD_ALL
(LPSleep)
Supply current
in low-power
sleep mode
fHCLK = fMSI
all peripherals disable
MAX(1)
TYP
Unit
fHCLK
25 °C 55 °C
85 °C
105 °C 125 °C 25 °C
55 °C
85 °C
105 °C 125 °C
2 MHz
81
110
217
395
754
115
182
375
750
1500
1 MHz
50
78
185
362
720
80
149
342
717
1456
400 kHz
28
57
163
340
698
60
122
314
689
1429
100 kHz
18
47
155
332
686
50
114
313
688
1438
µA
Electrical characteristics
102/204
Table 34. Current consumption in Low-power sleep modes, Flash in power-down
1. Guaranteed by characterization results, unless otherwise specified.
Table 35. Current consumption in Stop 2 mode
DS10969 Rev 5
Symbol
Parameter
IDD_ALL
(Stop 2)
Supply current in
Stop 2 mode,
RTC disabled
Conditions
-
-
RTC clocked by LSI
IDD_ALL
(Stop 2 with
RTC)
Supply current in
RTC clocked by LSE
Stop 2 mode,
bypassed at 32768 Hz
RTC enabled
VDD
25 °C 55 °C
85 °C
105 °C 125 °C 25 °C
55 °C
85 °C
105 °C 125 °C
1.8 V
1.14
3.77
14.7
34.7
77
2.7
9
37
87
193
2.4 V
1.15
3.86
15
35.5
79.1
2.7
10
38
89
198
3V
1.18
3.97
15.4
36.4
81.3
2.8
10
39
91
203
3.6 V
1.26
4.11
16
38
85.1
3.0
10
40
95(2)
213
1.8 V
1.42
4.04
15
34.9
77.2
3.1
10
38
87
193
2.4 V
1.5
4.22
15.4
35.7
79.2
3.2
11
39
89
198
3V
1.64
4.37
15.8
36.7
81.4
3.4
11
40
92
204
3.6 V
1.79
4.65
16.6
38.4
85.4
3.6
12
42
96
214
1.8 V
1.5
4.13
15.2
35.3
77.6
3.2
10
38
88
194
2.4 V
1.63
4.33
15.6
36
79.6
3.4
11
39
90
199
3V
1.79
4.55
16.1
37
81.8
3.6
11
40
93
205
3.6 V
2.04
4.9
16.8
38.7
85.6
3.9
12
42
97
214
1.8 V
1.43
3.99
14.7
35
-
3.2
10
37
88
-
2.4 V
1.54
4.11
15
35.8
-
3.3
10
38
90
-
3V
1.67
4.29
15.5
36.7
-
3.4
11
39
92
-
3.6 V
1.87
4.57
16.2
38.3
-
3.7
11
41
96
-
Unit
µA
µA
STM32L475xx
RTC clocked by LSE
quartz(3)
in low drive mode
MAX(1)
TYP
Symbol
Parameter
Supply current
IDD_ALL
during wakeup
(wakeup from
from Stop 2
Stop 2)
mode
Conditions
-
MAX(1)
TYP
VDD
25 °C 55 °C
85 °C
105 °C 125 °C 25 °C
Wakeup clock is
MSI = 48 MHz,
voltage Range 1.
See (4).
3V
1.9
-
-
-
-
Wakeup clock is
MSI = 4 MHz,
voltage Range 2.
See (4).
3V
2.24
-
-
-
-
Wakeup clock is
HSI16 = 16 MHz,
voltage Range 1.
See (4).
3V
2.1
-
-
-
-
55 °C
85 °C
105 °C 125 °C
-
Unit
STM32L475xx
Table 35. Current consumption in Stop 2 mode (continued)
mA
DS10969 Rev 5
1. Guaranteed by characterization results, unless otherwise specified.
2. Guaranteed by test in production.
3. Based on characterization done with a 32.768 kHz crystal (MC306-G-06Q-32.768, manufacturer JFVNY) with two 6.8 pF loading capacitors.
4. Wakeup with code execution from Flash. Average value given for a typical wakeup time as specified in Table 42: Low-power mode wakeup timings.
Table 36. Current consumption in Stop 1 mode
Parameter
IDD_ALL
(Stop 1)
Supply
current in
Stop 1 mode,
RTC disabled
Conditions
-
-
MAX(1)
TYP
VDD
25 °C 55 °C 85 °C 105 °C 125 °C 25 °C
55 °C
85 °C
1.8 V
6.59
24.7
92.7
208
437
2.4 V
6.65
24.8
92.9
209
439
3V
6.65
24.9
93.3
210
3.6 V
6.70
25.1
93.8
212
105 °C 125 °C
16
62
232
520
1093
17
62
232
523
1098
442
17
62
233
525
1105
447
17
63
235
530
1118
Unit
µA
103/204
Electrical characteristics
Symbol
Symbol
Parameter
Conditions
-
RTC clocked by LSI
Supply
IDD_ALL
current in stop RTC clocked by LSE
(Stop 1 with
1 mode,
bypassed, at 32768 Hz
RTC)
RTC enabled
RTC clocked by LSE quartz(2)
in low drive mode
MAX(1)
TYP
VDD
25 °C 55 °C 85 °C 105 °C 125 °C 25 °C
1.8 V
6.88
55 °C
85 °C
105 °C 125 °C
25.0
93.1
209
439
17
63
233
523
1098
2.4 V
7.02
25.2
93.7
210
441
18
63
234
525
1103
3V
7.12
25.4
94.2
212
444
18
64
236
530
1110
3.6 V
7.25
25.7
95.2
214
449
18
64
238
535
1123
1.8 V
6.91
25.2
93.4
210
440
17
63
234
525
1100
2.4 V
7.04
25.3
94.2
211
443
18
63
236
528
1108
3V
7.19
25.7
95.0
212
446
18
64
238
530
1115
3.6 V
7.97
26.0
96.1
215
451
20
65
240
538
1128
1.8 V
6.85
25.0
93.0
208.3
-
17
63
233
521
-
2.4 V
6.94
25.1
93.2
209.3
-
17
63
233
523
-
DS10969 Rev 5
3V
7.10
25.2
93.6
210.3
-
18
63
234
526
-
3.6 V
7.34
25.4
94.1
212.3
-
18
64
235
531
-
3V
1.47
-
-
-
-
3V
1.7
-
-
-
-
3V
1.62
-
-
-
-
Wakeup clock MSI = 48 MHz,
voltage Range 1,
See (3).
Wakeup clock MSI = 4 MHz,
Supply
IDD_ALL
current during voltage Range 2,
(wakeup
wakeup from See (3).
from Stop1)
Stop 1
Wakeup clock
HSI16 = 16 MHz,
voltage Range 1,
See (3).
-
Unit
Electrical characteristics
104/204
Table 36. Current consumption in Stop 1 mode (continued)
µA
mA
1. Guaranteed by characterization results, unless otherwise specified.
2. Based on characterization done with a 32.768 kHz crystal (MC306-G-06Q-32.768, manufacturer JFVNY) with two 6.8 pF loading capacitors.
3. Wakeup with code execution from Flash. Average value given for a typical wakeup time as specified in Table 42: Low-power mode wakeup timings.
STM32L475xx
Symbol
Parameter
IDD_ALL
(Stop 0)
Supply
current in
Stop 0 mode,
RTC disabled
Conditions
VDD
MAX(1)
TYP
25 °C 55 °C
85 °C
105 °C 125 °C 25 °C
55 °C
85 °C
105 °C 125 °C
1.8 V
108
132
217
356
631
153
213
426
773
1461
2.4 V
110
134
219
358
634
158
218
431
778
1468
3V
111
135
220
360
637
161
221
433
783
1476
3.6 V
113
137
222
363
642
166
226
438
791(2)
1488
Unit
STM32L475xx
Table 37. Current consumption in Stop 0 mode
µA
1. Guaranteed by characterization results, unless otherwise specified.
2. Guaranteed by test in production.
DS10969 Rev 5
Electrical characteristics
105/204
Symbol
IDD_ALL
(Standby)
Parameter
Supply current
in Standby
mode (backup
registers
retained),
RTC disabled
Conditions
-
no independent watchdog
with independent
watchdog
DS10969 Rev 5
RTC clocked by LSI, no
independent watchdog
IDD_ALL
(Standby
with RTC)
Supply current
in Standby
mode (backup
registers
retained),
RTC enabled
RTC clocked by LSI, with
independent watchdog
RTC clocked by LSE
bypassed at 32768Hz
MAX(1)
TYP
VDD
25 °C 55 °C
85 °C
105 °C 125 °C 25 °C
55 °C
85 °C
105 °C 125 °C
1.8 V
114
355
1540
4146
10735
176
888
3850
10365
26838
2.4 V
138
407
1795
4828
12451
223
1018
4488
12070
31128
3V
150
486
2074
5589
14291
263
1215
5185
13973
35728
3.6 V
198
618
2608
6928
17499
383
1545
6520
1.8 V
317
-
-
-
-
-
-
2.4 V
391
-
-
-
-
-
-
17320
(2)
43748
-
-
-
-
-
-
3V
438
-
-
-
-
-
-
-
-
-
3.6 V
566
-
-
-
-
-
-
-
-
-
1.8 V
377
621
1873
4564
11318
491
1207
4250
10867
27537
2.4 V
464
756
2210
5348
13166
614
1436
4986
12694
31986
3V
572
913
2599
6219
15197
770
1727
5815
14729
36815
3.6 V
722
1144
3253
7724
18696
1012
2176
7294
18275
45184
1.8 V
456
-
-
-
-
-
-
-
-
-
2.4 V
557
-
-
-
-
-
-
-
-
-
3V
663
-
-
-
-
-
-
-
-
-
3.6 V
885
-
-
-
-
-
-
-
-
-
1.8 V
289
527
1747
4402
11009
-
-
-
-
-
2.4 V
396
671
2108
5202
12869
-
-
-
-
-
528
853
2531
6095
14915
-
-
-
-
-
710
1111
3115
7470
18221
-
-
-
-
-
1.8 V
416
640
1862
4479
11908
-
-
-
-
-
2.4 V
RTC clocked by LSE
quartz (3) in low drive mode 3 V
514
796
2193
5236
13689
-
-
-
-
-
652
961
2589
6103
15598
-
-
-
-
-
3.6 V
821
1226
3235
7551
17947
-
-
-
-
-
nA
nA
nA
STM32L475xx
3V
3.6 V
Unit
Electrical characteristics
106/204
Table 38. Current consumption in Standby mode
Symbol
IDD_ALL
(SRAM2)(4)
IDD_ALL
(wakeup
from
Standby)
Conditions
Parameter
Supply current
to be added in
Standby mode
when SRAM2
is retained
Supply current
during wakeup
from Standby
mode
-
VDD
-
Wakeup clock is
MSI = 4 MHz.
See (5).
MAX(1)
TYP
25 °C 55 °C
85 °C
105 °C 125 °C 25 °C
55 °C
85 °C
105 °C 125 °C
1.8 V
235
641
2293
5192
11213
588
1603
5733
12980
28033
2.4 V
237
645
2303
5213
11246
593
1613
5758
13033
28115
3V
236
647
2306
5221
11333
593
1618
5765
13053
28333
3.6 V
235
646
2308
5200
11327
595
1620
5770
13075
28350
3V
1.7
-
-
-
-
-
Unit
STM32L475xx
Table 38. Current consumption in Standby mode (continued)
nA
mA
1. Guaranteed by characterization results, unless otherwise specified.
2. Guaranteed by test in production.
3. Based on characterization done with a 32.768 kHz crystal (MC306-G-06Q-32.768, manufacturer JFVNY) with two 6.8 pF loading capacitors.
DS10969 Rev 5
4. The supply current in Standby with SRAM2 mode is: IDD_ALL(Standby) + IDD_ALL(SRAM2). The supply current in Standby with RTC with SRAM2 mode is: IDD_ALL(Standby
+ RTC) + IDD_ALL(SRAM2).
5. Wakeup with code execution from Flash. Average value given for a typical wakeup time as specified in Table 42: Low-power mode wakeup timings.
Table 39. Current consumption in Shutdown mode
Symbol
IDD_ALL
(Shutdown)
Parameter
-
-
MAX(1)
TYP
VDD
25 °C 55 °C
85 °C
105 °C 125 °C 25 °C
55 °C
85 °C
1.8 V
29.8
194
1110
3250
9093
2.4 V
44.3
237
1310
3798
3V
64.1
293
1554
3.6 V
112
420
2041
105 °C 125 °C
75
485
2775
8125
22733
10473
111
593
3275
9495
26183
4461
12082
160
733
3885
11153
30205
5689
15186
280
1050
5103
14223
37965
Unit
nA
107/204
Electrical characteristics
Supply current
in Shutdown
mode
(backup
registers
retained) RTC
disabled
Conditions
Symbol
IDD_ALL
(Shutdown
with RTC)
Parameter
Supply current
in Shutdown
mode
(backup
registers
retained) RTC
enabled
DS10969 Rev 5
Supply current
IDD_ALL
during wakeup
(wakeup from
from Shutdown
Shutdown)
mode
Conditions
-
RTC clocked by LSE
bypassed at 32768 Hz
RTC clocked by LSE
quartz (2) in low drive
mode
Wakeup clock is
MSI = 4 MHz.
See (3).
MAX(1)
TYP
VDD
25 °C 55 °C
85 °C
105 °C 125 °C 25 °C
55 °C
85 °C
105 °C 125 °C
1.8 V
210
378
1299
3437
9357
-
-
-
-
-
2.4 V
303
499
1577
4056
10825
-
-
-
-
-
3V
422
655
1925
4820
12569
-
-
-
-
-
3.6 V
584
888
2511
6158
15706
-
-
-
-
-
1.8 V
329
499
1408
3460
-
-
-
-
-
-
2.4 V
431
634
1688
4064
-
-
-
-
-
-
3V
554
791
2025
4795
-
-
-
-
-
-
3.6 V
729
1040
2619
6129
-
-
-
-
-
-
3V
0.6
-
-
-
-
-
-
-
-
-
Unit
nA
Electrical characteristics
108/204
Table 39. Current consumption in Shutdown mode (continued)
mA
1. Guaranteed by characterization results, unless otherwise specified.
2. Based on characterization done with a 32.768 kHz crystal (MC306-G-06Q-32.768, manufacturer JFVNY) with two 6.8 pF loading capacitors.
3. Wakeup with code execution from Flash. Average value given for a typical wakeup time as specified in Table 42: Low-power mode wakeup timings.
STM32L475xx
Symbol
Parameter
Conditions
-
RTC disabled
IDD_VBAT
RTC enabled and
Backup domain
clocked by LSE
supply current
bypassed at 32768 Hz
DS10969 Rev 5
RTC enabled and
clocked by LSE
quartz(2)
MAX(1)
TYP
VBAT
25 °C 55 °C
85 °C
105 °C 125 °C 25 °C
55 °C
85 °C
105 °C 125 °C
73
490
1468
4158
1.8 V
4
29
196
587
1663
10.8
2.4 V
5.27
36
226
673
1884
13.2
90
565
1683
4710
3V
6
42
264
775
2147
15.5
106
660
1938
5368
3.6 V
10
58
323
919
2488
25.8
144
808
2298
6220
1.8 V
183
201
367
729
-
-
-
-
-
-
2.4 V
268
295
486
901
-
-
-
-
-
-
3V
376
412
602
1075
-
-
-
-
-
-
3.6 V
508
558
752
1299
-
-
-
-
-
-
1.8 V
302
344
521
915
1978
-
-
-
-
-
2.4 V
388
436
639
1091
2289
-
-
-
-
-
3V
494
549
784
1301
2656
-
-
-
-
-
3.6 V
630
692
971
1571
3115
-
-
-
-
-
Unit
STM32L475xx
Table 40. Current consumption in VBAT mode
nA
1. Guaranteed by characterization results, unless otherwise specified.
2. Based on characterization done with a 32.768 kHz crystal (MC306-G-06Q-32.768, manufacturer JFVNY) with two 6.8 pF loading capacitors.
Electrical characteristics
109/204
Electrical characteristics
STM32L475xx
I/O system current consumption
The current consumption of the I/O system has two components: static and dynamic.
I/O static current consumption
All the I/Os used as inputs with pull-up generate current consumption when the pin is
externally held low. The value of this current consumption can be simply computed by using
the pull-up/pull-down resistors values given in Table 60: I/O static characteristics.
For the output pins, any external pull-down or external load must also be considered to
estimate the current consumption.
Additional I/O current consumption is due to I/Os configured as inputs if an intermediate
voltage level is externally applied. This current consumption is caused by the input Schmitt
trigger circuits used to discriminate the input value. Unless this specific configuration is
required by the application, this supply current consumption can be avoided by configuring
these I/Os in analog mode. This is notably the case of ADC input pins which should be
configured as analog inputs.
Caution:
Any floating input pin can also settle to an intermediate voltage level or switch inadvertently,
as a result of external electromagnetic noise. To avoid current consumption related to
floating pins, they must either be configured in analog mode, or forced internally to a definite
digital value. This can be done either by using pull-up/down resistors or by configuring the
pins in output mode.
I/O dynamic current consumption
In addition to the internal peripheral current consumption measured previously (see
Table 41: Peripheral current consumption), the I/Os used by an application also contribute
to the current consumption. When an I/O pin switches, it uses the current from the I/O
supply voltage to supply the I/O pin circuitry and to charge/discharge the capacitive load
(internal or external) connected to the pin:
I SW = V DDIOx × f SW × C
where
ISW is the current sunk by a switching I/O to charge/discharge the capacitive load
VDDIOx is the I/O supply voltage
fSW is the I/O switching frequency
C is the total capacitance seen by the I/O pin: C = CINT+ CEXT + CS
CS is the PCB board capacitance including the pad pin.
The test pin is configured in push-pull output mode and is toggled by software at a fixed
frequency.
110/204
DS10969 Rev 5
STM32L475xx
Electrical characteristics
On-chip peripheral current consumption
The current consumption of the on-chip peripherals is given in Table 41. The MCU is placed
under the following conditions:
•
All I/O pins are in Analog mode
•
The given value is calculated by measuring the difference of the current consumptions:
–
when the peripheral is clocked on
–
when the peripheral is clocked off
•
Ambient operating temperature and supply voltage conditions summarized in Table 20:
Voltage characteristics
•
The power consumption of the digital part of the on-chip peripherals is given in
Table 41. The power consumption of the analog part of the peripherals (where
applicable) is indicated in each related section of the datasheet.
Table 41. Peripheral current consumption
Range 1
Range 2
Low-power run
and sleep
Bus Matrix(1)
4.5
3.7
4.1
ADC independent clock domain
0.4
0.1
0.2
ADC AHB clock domain
5.5
4.7
5.5
CRC
0.4
0.2
0.3
DMA1
1.4
1.3
1.4
DMA2
1.5
1.3
1.4
FLASH
6.2
5.2
5.8
FMC
8.9
7.5
8.4
GPIOA(2)
4.8
3.8
4.4
(2)
4.8
4.0
4.6
GPIOC(2)
4.5
3.8
4.3
(2)
GPIOD
4.6
3.9
4.4
GPIOE(2)
5.2
4.5
4.9
GPIOF(2)
5.9
4.9
5.7
(2)
4.3
3.8
4.2
(2)
GPIOH
0.7
0.6
0.8
OTG_FS independent clock
domain
23.2
N/A
N/A
OTG_FS AHB clock domain
16.4
N/A
N/A
QUADSPI
7.8
6.7
7.3
RNG independent clock domain
2.2
N/A
N/A
RNG AHB clock domain
0.6
N/A
N/A
SRAM1
0.9
0.8
0.9
Peripheral
GPIOB
AHB
GPIOG
DS10969 Rev 5
Unit
µA/MHz
111/204
190
Electrical characteristics
STM32L475xx
Table 41. Peripheral current consumption (continued)
Range 1
Range 2
Low-power run
and sleep
SRAM2
1.6
1.4
1.6
TSC
1.8
1.4
1.6
118.5
77.3
87.6
AHB to APB1 bridge
0.9
0.7
0.9
CAN1
4.6
4.0
4.4
DAC1
2.4
1.9
2.2
I2C1 independent clock domain
3.7
3.1
3.2
I2C1 APB clock domain
1.3
1.1
1.5
I2C2 independent clock domain
3.7
3.0
3.2
I2C2 APB clock domain
1.4
1.1
1.5
I2C3 independent clock domain
2.9
2.3
2.5
I2C3 APB clock domain
0.9
0.9
1.1
LPUART1 independent clock
domain
2.1
1.6
2.0
LPUART1 APB clock domain
0.6
0.6
0.6
LPTIM1 independent clock
domain
3.3
2.6
2.9
LPTIM1 APB clock domain
0.9
0.8
1.0
LPTIM2 independent clock
domain
3.1
2.7
2.9
LPTIM2 APB clock domain
0.8
0.6
0.7
OPAMP
0.4
0.4
0.3
PWR
0.5
0.5
0.4
SPI2
1.8
1.6
1.6
SPI3
2.1
1.7
1.8
SWPMI1 independent clock
domain
2.3
1.8
2.2
SWPMI1 APB clock domain
1.1
1.1
1.0
TIM2
6.8
5.7
6.3
TIM3
5.4
4.6
5.0
TIM4
5.2
4.4
4.9
TIM5
6.5
5.5
6.1
TIM6
1.1
1.0
1.0
TIM7
1.1
0.9
1.0
Peripheral
AHB
All AHB Peripherals
(3)
APB1
112/204
DS10969 Rev 5
Unit
µA/MHz
µA/MHz
STM32L475xx
Electrical characteristics
Table 41. Peripheral current consumption (continued)
Range 1
Range 2
Low-power run
and sleep
USART2 independent clock
domain
4.1
3.6
3.8
USART2 APB clock domain
1.4
1.1
1.5
USART3 independent clock
domain
4.7
4.1
4.2
USART3 APB clock domain
1.5
1.3
1.7
UART4 independent clock
domain
3.9
3.2
3.5
UART4 APB clock domain
1.5
1.3
1.6
UART5 independent clock
domain
3.9
3.2
3.5
UART5 APB clock domain
1.3
1.2
1.4
WWDG
0.5
0.5
0.5
All APB1 on
84.2
70.7
80.2
AHB to APB2 bridge(4)
1.0
0.9
0.9
DFSDM1
5.6
4.6
5.3
FW
0.7
0.5
0.7
SAI1 independent clock domain
2.6
2.1
2.3
SAI1 APB clock domain
2.1
1.8
2.0
SAI2 independent clock domain
3.3
2.7
3.0
SAI2 APB clock domain
2.4
2.1
2.2
SDMMC1 independent clock
domain
4.7
3.9
4.2
SDMMC1 APB clock domain
2.5
1.9
2.1
SPI1
2.0
1.6
1.9
SYSCFG/VREFBUF/COMP
0.6
0.4
0.5
TIM1
8.3
6.9
7.9
TIM8
8.6
7.1
8.1
TIM15
4.1
3.4
3.9
TIM16
3.0
2.5
2.9
TIM17
3.0
2.4
2.9
USART1 independent clock
domain
4.9
4.0
4.4
USART1 APB clock domain
1.5
1.3
1.7
All APB2 on
56.8
43.3
48.2
256.8
189.6
215.5
Peripheral
APB1
APB2
ALL
DS10969 Rev 5
Unit
µA/MHz
113/204
190
Electrical characteristics
STM32L475xx
1. The BusMatrix is automatically active when at least one master is ON (CPU, DMA).
2. The GPIOx (x= A…H) dynamic current consumption is approximately divided by a factor two versus this table values when
the GPIO port is locked thanks to LCKK and LCKy bits in the GPIOx_LCKR register. In order to save the full GPIOx current
consumption, the GPIOx clock should be disabled in the RCC when all port I/Os are used in alternate function or analog
mode (clock is only required to read or write into GPIO registers, and is not used in AF or analog modes).
3. The AHB to APB1 Bridge is automatically active when at least one peripheral is ON on the APB1.
4. The AHB to APB2 Bridge is automatically active when at least one peripheral is ON on the APB2.
6.3.6
Wakeup time from low-power modes and voltage scaling
transition times
The wakeup times given in Table 42 are the latency between the event and the execution of
the first user instruction.
The device goes in low-power mode after the WFE (Wait For Event) instruction.
Table 42. Low-power mode wakeup timings(1)
Symbol
tWUSLEEP
Parameter
Typ
Max
-
6
6
Wakeup time from Sleep
mode to Run mode
Wakeup time from LowtWULPSLEEP power sleep mode to Lowpower run mode
Wakeup in Flash with Flash in power-down during
low-power sleep mode (SLEEP_PD=1 in
FLASH_ACR) and with clock MSI = 2 MHz
Range 1
Wake up time from Stop 0
mode to Run mode in Flash
Range 2
tWUSTOP0
Range 1
Wake up time from Stop 0
mode to Run mode in
SRAM1
114/204
Conditions
Range 2
6
9.3
Wakeup clock MSI = 48 MHz
5.6
10.9
Wakeup clock HSI16 = 16 MHz
4.7
10.4
Wakeup clock MSI = 24 MHz
5.7
11.1
Wakeup clock HSI16 = 16 MHz
4.5
10.5
Wakeup clock MSI = 4 MHz
6.6
14.2
Wakeup clock MSI = 48 MHz
0.7
2.05
Wakeup clock HSI16 = 16 MHz
1.7
2.8
Wakeup clock MSI = 24 MHz
0.8
2.72
Wakeup clock HSI16 = 16 MHz
1.7
2.8
Wakeup clock MSI = 4 MHz
2.4
11.32
DS10969 Rev 5
Unit
Nb of
CPU
cycles
µs
STM32L475xx
Electrical characteristics
Table 42. Low-power mode wakeup timings(1) (continued)
Symbol
Parameter
Conditions
Range 1
Wake up time from Stop 1
mode to Run mode in Flash
Range 2
Range 1
tWUSTOP1
Wake up time from Stop 1
mode to Run mode in
SRAM1
Wake up time from Stop 1
mode to Low-power run
mode in Flash
Wake up time from Stop 1
mode to Low-power run
mode in SRAM1
Range 2
Wake up time from Stop 2
mode to Run mode in Flash
Range 2
tWUSTOP2
Range 1
tWUSTBY
tWUSTBY
SRAM2
tWUSHDN
Max
Wakeup clock MSI = 48 MHz
6.2
10.2
Wakeup clock HSI16 = 16 MHz
6.3
8.99
Wakeup clock MSI = 24 MHz
6.3 10.46
Wakeup clock HSI16 = 16 MHz
6.3
Wakeup clock MSI = 4 MHz
8.0 13.23
Wakeup clock MSI = 48 MHz
4.5
5.78
Wakeup clock HSI16 = 16 MHz
5.5
7.1
Wakeup clock MSI = 24 MHz
5.0
6.5
Wakeup clock HSI16 = 16 MHz
5.5
7.1
Wakeup clock MSI = 4 MHz
8.2
13.5
12.7
20
Regulator in
low-power
Wakeup clock MSI = 2 MHz
mode (LPR=1 in
PWR_CR1)
Range 1
Wake up time from Stop 2
mode to Run mode in
SRAM1
Typ
Range 2
Wakeup time from Standby
mode to Run mode
Range 1
Wakeup time from Standby
with SRAM2 to Run mode
Range 1
Wakeup time from
Shutdown mode to Run
mode
Range 1
Unit
8.87
µs
10.7 21.5
Wakeup clock MSI = 48 MHz
8.0
9.4
Wakeup clock HSI16 = 16 MHz
7.3
9.3
Wakeup clock MSI = 24 MHz
8.2
9.9
Wakeup clock HSI16 = 16 MHz
7.3
9.3
Wakeup clock MSI = 4 MHz
10.6 15.8
Wakeup clock MSI = 48 MHz
5.1
6.7
Wakeup clock HSI16 = 16 MHz
5.7
8
Wakeup clock MSI = 24 MHz
5.5
6.65
Wakeup clock HSI16 = 16 MHz
5.7
7.53
Wakeup clock MSI = 4 MHz
8.2
16.6
Wakeup clock MSI = 8 MHz
14.3 20.8
Wakeup clock MSI = 4 MHz
20.1 35.5
Wakeup clock MSI = 8 MHz
14.3 24.3
Wakeup clock MSI = 4 MHz
20.1 38.5
Wakeup clock MSI = 4 MHz
256 330.6
µs
µs
µs
µs
1. Guaranteed by characterization results.
DS10969 Rev 5
115/204
190
Electrical characteristics
STM32L475xx
Table 43. Regulator modes transition times(1)
Symbol
Parameter
tWULPRUN
tVOST
Conditions
Typ
Max
Wakeup time from Low-power run mode to
Code run with MSI 2 MHz
Run mode(2)
5
7
Regulator transition time from Range 2 to
Range 1 or Range 1 to Range 2(3)
20
40
Typ
Max
Stop 0 mode
-
1.7
Stop 1 mode and Stop 2
mode
-
8.5
Unit
µs
Code run with MSI 24 MHz
1. Guaranteed by characterization results.
2. Time until REGLPF flag is cleared in PWR_SR2.
3. Time until VOSF flag is cleared in PWR_SR2.
Table 44. Wakeup time using USART/LPUART(1)
Symbol
Parameter
tWUUSART
tWULPUART
Conditions
Wakeup time needed to calculate the
maximum USART/LPUART baudrate
allowing to wakeup up from stop mode
when USART/LPUART clock source is
HSI16
Unit
µs
1. Guaranteed by design.
6.3.7
External clock source characteristics
High-speed external user clock generated from an external source
In bypass mode the HSE oscillator is switched off and the input pin is a standard GPIO.
The external clock signal has to respect the I/O characteristics in Section 6.3.14. However,
the recommended clock input waveform is shown in Figure 14: High-speed external clock
source AC timing diagram.
Table 45. High-speed external user clock characteristics(1)
Symbol
fHSE_ext
Parameter
User external clock source frequency
Conditions
Min
Typ
Max
Voltage scaling
Range 1
-
8
48
Voltage scaling
Range 2
-
8
26
MHz
VHSEH
OSC_IN input pin high level voltage
-
0.7 VDDIOx
-
VDDIOx
VHSEL
OSC_IN input pin low level voltage
-
VSS
-
0.3 VDDIOx
Voltage scaling
Range 1
7
-
-
Voltage scaling
Range 2
18
-
-
tw(HSEH)
OSC_IN high or low time
tw(HSEL)
1. Guaranteed by design.
116/204
DS10969 Rev 5
Unit
V
ns
STM32L475xx
Electrical characteristics
Figure 14. High-speed external clock source AC timing diagram
tw(HSEH)
VHSEH
90%
10%
VHSEL
tr(HSE)
tf(HSE)
t
tw(HSEL)
THSE
MS19214V2
Low-speed external user clock generated from an external source
In bypass mode the LSE oscillator is switched off and the input pin is a standard GPIO.
The external clock signal has to respect the I/O characteristics in Section 6.3.14. However,
the recommended clock input waveform is shown in Figure 15.
Table 46. Low-speed external user clock characteristics(1)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
kHz
fLSE_ext
User external clock source frequency
-
-
32.768
1000
VLSEH
OSC32_IN input pin high level voltage
-
0.7 VDDIOx
-
VDDIOx
VLSEL
OSC32_IN input pin low level voltage
-
VSS
-
0.3 VDDIOx
-
250
-
-
tw(LSEH)
OSC32_IN high or low time
tw(LSEL)
V
ns
1. Guaranteed by design.
Figure 15. Low-speed external clock source AC timing diagram
tw(LSEH)
VLSEH
90%
VLSEL
10%
tr(LSE)
tf(LSE)
t
tw(LSEL)
TLSE
MS19215V2
DS10969 Rev 5
117/204
190
Electrical characteristics
STM32L475xx
High-speed external clock generated from a crystal/ceramic resonator
The high-speed external (HSE) clock can be supplied with a 4 to 48 MHz crystal/ceramic
resonator oscillator. All the information given in this paragraph are based on design
simulation results obtained with typical external components specified in Table 47. In the
application, the resonator and the load capacitors have to be placed as close as possible to
the oscillator pins in order to minimize output distortion and startup stabilization time. Refer
to the crystal resonator manufacturer for more details on the resonator characteristics
(frequency, package, accuracy).
Table 47. HSE oscillator characteristics(1)
Symbol
fOSC_IN
RF
Conditions(2)
Min
Typ
Max
Unit
Oscillator frequency
-
4
8
48
MHz
Feedback resistor
-
-
200
-
kΩ
-
-
5.5
VDD = 3 V,
Rm = 30 Ω,
CL = 10 pF@8 MHz
-
0.44
-
VDD = 3 V,
Rm = 45 Ω,
CL = 10 pF@8 MHz
-
0.45
-
VDD = 3 V,
Rm = 30 Ω,
CL = 5 pF@48 MHz
-
0.68
-
VDD = 3 V,
Rm = 30 Ω,
CL = 10 pF@48 MHz
-
0.94
-
VDD = 3 V,
Rm = 30 Ω,
CL = 20 pF@48 MHz
-
1.77
-
Startup
-
-
1.5
mA/V
VDD is stabilized
-
2
-
ms
Parameter
During startup
IDD(HSE)
Gm
HSE current consumption
Maximum critical crystal
transconductance
tSU(HSE)(4) Startup time
(3)
mA
1. Guaranteed by design.
2. Resonator characteristics given by the crystal/ceramic resonator manufacturer.
3. This consumption level occurs during the first 2/3 of the tSU(HSE) startup time
4. tSU(HSE) is the startup time measured from the moment it is enabled (by software) to a stabilized 8 MHz
oscillation is reached. This value is measured for a standard crystal resonator and it can vary significantly
with the crystal manufacturer
For CL1 and CL2, it is recommended to use high-quality external ceramic capacitors in the
5 pF to 20 pF range (typ.), designed for high-frequency applications, and selected to match
the requirements of the crystal or resonator (see Figure 16). CL1 and CL2 are usually the
same size. The crystal manufacturer typically specifies a load capacitance which is the
series combination of CL1 and CL2. PCB and MCU pin capacitance must be included (10 pF
can be used as a rough estimate of the combined pin and board capacitance) when sizing
CL1 and CL2.
118/204
DS10969 Rev 5
STM32L475xx
Note:
Electrical characteristics
For information on selecting the crystal, refer to the application note AN2867 “Oscillator
design guide for ST microcontrollers” available from the ST website www.st.com.
Figure 16. Typical application with an 8 MHz crystal
Resonator with integrated
capacitors
CL1
OSC_IN
8 MHz
resonator
CL2
REXT (1)
fHSE
RF
Bias
controlled
gain
OSC_OUT
MS19876V1
1. REXT value depends on the crystal characteristics.
Low-speed external clock generated from a crystal resonator
The low-speed external (LSE) clock can be supplied with a 32.768 kHz crystal resonator
oscillator. All the information given in this paragraph are based on design simulation results
obtained with typical external components specified in Table 48. In the application, the
resonator and the load capacitors have to be placed as close as possible to the oscillator
pins in order to minimize output distortion and startup stabilization time. Refer to the crystal
resonator manufacturer for more details on the resonator characteristics (frequency,
package, accuracy).
Table 48. LSE oscillator characteristics (fLSE = 32.768 kHz)(1)
Symbol
IDD(LSE)
Parameter
LSE current consumption
Maximum critical crystal
Gmcritmax
gm
tSU(LSE)(3) Startup time
Conditions(2)
Min
Typ
Max
LSEDRV[1:0] = 00
Low drive capability
-
250
-
LSEDRV[1:0] = 01
Medium low drive capability
-
315
-
LSEDRV[1:0] = 10
Medium high drive capability
-
500
-
LSEDRV[1:0] = 11
High drive capability
-
630
-
LSEDRV[1:0] = 00
Low drive capability
-
-
0.5
LSEDRV[1:0] = 01
Medium low drive capability
-
-
0.75
LSEDRV[1:0] = 10
Medium high drive capability
-
-
1.7
LSEDRV[1:0] = 11
High drive capability
-
-
2.7
VDD is stabilized
-
2
-
DS10969 Rev 5
Unit
nA
µA/V
s
119/204
190
Electrical characteristics
STM32L475xx
1. Guaranteed by design.
2. Refer to the note and caution paragraphs below the table, and to the application note AN2867 “Oscillator design guide for
ST microcontrollers”.
3.
tSU(LSE) is the startup time measured from the moment it is enabled (by software) to a stabilized 32.768 kHz oscillation is
reached. This value is measured for a standard crystal and it can vary significantly with the crystal manufacturer
Note:
For information on selecting the crystal, refer to the application note AN2867 “Oscillator
design guide for ST microcontrollers” available from the ST website www.st.com.
Figure 17. Typical application with a 32.768 kHz crystal
Resonator with integrated
capacitors
CL1
OSC32_IN
fLSE
Drive
programmable
amplifier
32.768 kHz
resonator
OSC32_OUT
CL2
MS30253V2
Note:
120/204
An external resistor is not required between OSC32_IN and OSC32_OUT and it is forbidden
to add one.
DS10969 Rev 5
STM32L475xx
6.3.8
Electrical characteristics
Internal clock source characteristics
The parameters given in Table 49 are derived from tests performed under ambient
temperature and supply voltage conditions summarized in Table 23: General operating
conditions. The provided curves are characterization results, not tested in production.
High-speed internal (HSI16) RC oscillator
Table 49. HSI16 oscillator characteristics(1)
Symbol
fHSI16
TRIM
Parameter
HSI16 Frequency
HSI16 user trimming step
DuCy(HSI16)(2) Duty Cycle
Conditions
Min
Typ
Max
Unit
15.88
-
16.08
MHz
Trimming code is not a
multiple of 64
0.2
0.3
0.4
Trimming code is a
multiple of 64
-4
-6
-8
45
-
55
%
-1
-
1
%
-2
-
1.5
%
-0.1
-
0.05
%
VDD=3.0 V, TA=30 °C
-
%
∆Temp(HSI16)
HSI16 oscillator frequency TA= 0 to 85 °C
drift over temperature
TA= -40 to 125 °C
∆VDD(HSI16)
HSI16 oscillator frequency
VDD=1.62 V to 3.6 V
drift over VDD
tsu(HSI16)(2)
HSI16 oscillator start-up
time
-
-
0.8
1.2
μs
tstab(HSI16)(2)
HSI16 oscillator
stabilization time
-
-
3
5
μs
IDD(HSI16)(2)
HSI16 oscillator power
consumption
-
-
155
190
μA
1. Guaranteed by characterization results.
2. Guaranteed by design.
DS10969 Rev 5
121/204
190
Electrical characteristics
STM32L475xx
Figure 18. HSI16 frequency versus temperature
MHz
16.4
+2 %
16.3
+1.5 %
16.2
+1 %
16.1
16
15.9
-1 %
15.8
-1.5 %
15.7
-2 %
15.6
-40
-20
0
Mean
20
40
60
min
80
100
120 °C
max
MSv39299V2
122/204
DS10969 Rev 5
STM32L475xx
Electrical characteristics
Multi-speed internal (MSI) RC oscillator
Table 50. MSI oscillator characteristics(1)
Symbol
Parameter
Conditions
Min
Typ
Max
Range 0
99
100
101
Range 1
198
200
202
Range 2
396
400
404
Range 3
792
800
808
Range 4
0.99
1
1.01
Range 5
1.98
2
2.02
Range 6
3.96
4
4.04
Range 7
7.92
8
8.08
Range 8
15.8
16
16.16
Range 9
23.8
24
24.4
Range 10
31.7
32
32.32
Range 11
47.5
48
48.48
Range 0
-
98.304
-
Range 1
-
196.608
-
Range 2
-
393.216
-
Range 3
-
786.432
-
Range 4
-
1.016
-
PLL mode Range 5
XTAL=
32.768 kHz Range 6
-
1.999
-
-
3.998
-
Range 7
-
7.995
-
Range 8
-
15.991
-
Range 9
-
23.986
-
Range 10
-
32.014
-
Range 11
-
48.005
-
-3.5
-
3
-8
-
6
MSI mode
fMSI
∆TEMP(MSI)(2)
MSI frequency
after factory
calibration, done
at VDD=3 V and
TA=30 °C
MSI oscillator
frequency drift
over temperature
MSI mode
TA= -0 to 85 °C
TA= -40 to 125 °C
DS10969 Rev 5
Unit
kHz
MHz
kHz
MHz
%
123/204
190
Electrical characteristics
STM32L475xx
Table 50. MSI oscillator characteristics(1) (continued)
Symbol
Parameter
Conditions
Min
Typ
VDD=1.62 V
to 3.6 V
-1.2
-
VDD=2.4 V
to 3.6 V
-0.5
-
VDD=1.62 V
to 3.6 V
-2.5
-
VDD=2.4 V
to 3.6 V
-0.8
-
VDD=1.62 V
to 3.6 V
-5
-
VDD=2.4 V
to 3.6 V
-1.6
-
TA= -40 to 85 °C
-
1
2
TA= -40 to 125 °C
-
2
4
Range 0 to 3
∆VDD(MSI)
(2)
MSI oscillator
frequency drift
MSI mode
over VDD
(reference is 3 V)
Range 4 to 7
Range 8 to 11
∆FSAMPLING
(MSI)(2)(6)
Frequency
variation in
MSI mode
sampling mode(3)
P_USB
Jitter(MSI)(6)
Period jitter for
USB clock(4)
MT_USB
Jitter(MSI)(6)
Medium term jitter PLL mode
for USB clock(5)
Range 11
CC jitter(MSI)(6)
P jitter(MSI)(6)
tSU(MSI)(6)
tSTAB(MSI)(6)
124/204
PLL mode
Range 11
Max
Unit
0.5
0.7
%
1
for next
transition
-
-
-
3.458
for paired
transition
-
-
-
3.916
for next
transition
-
-
-
2
for paired
transition
-
-
-
1
%
ns
ns
RMS cycle-tocycle jitter
PLL mode Range 11
-
-
60
-
ps
RMS Period jitter
PLL mode Range 11
-
-
50
-
ps
Range 0
-
-
10
20
Range 1
-
-
5
10
Range 2
-
-
4
8
Range 3
-
-
3
7
Range 4 to 7
-
-
3
6
Range 8 to 11
-
-
2.5
6
10 % of final
frequency
-
-
0.25
0.5
5 % of final
frequency
-
-
0.5
1.25
1 % of final
frequency
-
-
-
2.5
MSI oscillator
start-up time
MSI oscillator
stabilization time
PLL mode
Range 11
DS10969 Rev 5
us
ms
STM32L475xx
Electrical characteristics
Table 50. MSI oscillator characteristics(1) (continued)
Symbol
IDD(MSI)(6)
Parameter
MSI oscillator
power
consumption
Conditions
MSI and
PLL mode
Min
Typ
Max
Range 0
-
-
0.6
1
Range 1
-
-
0.8
1.2
Range 2
-
-
1.2
1.7
Range 3
-
-
1.9
2.5
Range 4
-
-
4.7
6
Range 5
-
-
6.5
9
Range 6
-
-
11
15
Range 7
-
-
18.5
25
Range 8
-
-
62
80
Range 9
-
-
85
110
Range 10
-
-
110
130
Range 11
-
-
155
190
Unit
µA
1. Guaranteed by characterization results.
2. This is a deviation for an individual part once the initial frequency has been measured.
3. Sampling mode means Low-power run/Low-power sleep modes with Temperature sensor disable.
4. Average period of MSI @48 MHz is compared to a real 48 MHz clock over 28 cycles. It includes frequency tolerance + jitter
of MSI @48 MHz clock.
5. Only accumulated jitter of MSI @48 MHz is extracted over 28 cycles.
For next transition: min. and max. jitter of 2 consecutive frame of 28 cycles of the MSI @48 MHz, for 1000 captures over 28
cycles.
For paired transitions: min. and max. jitter of 2 consecutive frame of 56 cycles of the MSI @48 MHz, for 1000 captures over
56 cycles.
6. Guaranteed by design.
DS10969 Rev 5
125/204
190
Electrical characteristics
STM32L475xx
Figure 19. Typical current consumption versus MSI frequency
Low-speed internal (LSI) RC oscillator
Table 51. LSI oscillator characteristics(1)
Symbol
fLSI
tSU(LSI)(2)
tSTAB(LSI)(2)
IDD(LSI)(2)
Parameter
LSI Frequency
Conditions
Min
Typ
Max
VDD = 3.0 V, TA = 30 °C
31.04
-
32.96
VDD = 1.62 to 3.6 V, TA = -40 to 125 °C
29.5
-
34
-
-
80
130
μs
5% of final frequency
-
125
180
μs
-
-
110
180
nA
LSI oscillator startup time
LSI oscillator
stabilization time
LSI oscillator power
consumption
Unit
kHz
1. Guaranteed by characterization results.
2. Guaranteed by design.
6.3.9
PLL characteristics
The parameters given in Table 52 are derived from tests performed under temperature and
VDD supply voltage conditions summarized in Table 23: General operating conditions.
126/204
DS10969 Rev 5
STM32L475xx
Electrical characteristics
Table 52. PLL, PLLSAI1, PLLSAI2 characteristics(1)
Symbol
fPLL_IN
Parameter
Conditions
Min
Typ
Max
Unit
PLL input clock(2)
-
4
-
16
MHz
PLL input clock duty cycle
-
45
-
55
%
Voltage scaling Range 1
2.0645
-
80
Voltage scaling Range 2
2.0645
-
26
Voltage scaling Range 1
8
-
80
Voltage scaling Range 2
8
-
26
Voltage scaling Range 1
8
-
80
Voltage scaling Range 2
8
-
26
Voltage scaling Range 1
64
-
344
Voltage scaling Range 2
64
-
128
-
15
40
-
40
-
-
30
-
VCO freq = 64 MHz
-
150
200
VCO freq = 96 MHz
-
200
260
VCO freq = 192 MHz
-
300
380
VCO freq = 344 MHz
-
520
650
fPLL_P_OUT PLL multiplier output clock P
fPLL_Q_OUT PLL multiplier output clock Q
fPLL_R_OUT PLL multiplier output clock R
fVCO_OUT
tLOCK
Jitter
IDD(PLL)
PLL VCO output
PLL lock time
-
RMS cycle-to-cycle jitter
System clock 80 MHz
RMS period jitter
PLL power consumption on
VDD(1)
MHz
MHz
MHz
MHz
μs
±ps
μA
1. Guaranteed by design.
2. Take care of using the appropriate division factor M to obtain the specified PLL input clock values. The M factor is shared
between the 3 PLLs.
6.3.10
Flash memory characteristics
Table 53. Flash memory characteristics(1)
Symbol
Parameter
Conditions
Typ
Max
Unit
tprog
64-bit programming time
-
81.69
90.76
µs
tprog_row
one row (32 double
word) programming time
normal programming
2.61
2.90
fast programming
1.91
2.12
tprog_page
one page (2 Kbyte)
programming time
normal programming
20.91
23.24
fast programming
15.29
16.98
22.02
24.47
normal programming
5.35
5.95
fast programming
3.91
4.35
22.13
24.59
tERASE
tprog_bank
tME
Page (2 KB) erase time
one bank (512 Kbyte)
programming time
-
Mass erase time
(one or two banks)
-
DS10969 Rev 5
ms
s
ms
127/204
190
Electrical characteristics
STM32L475xx
Table 53. Flash memory characteristics(1) (continued)
Symbol
IDD
Parameter
Conditions
Average consumption
from VDD
Maximum current (peak)
Typ
Max
Write mode
3.4
-
Erase mode
3.4
-
Write mode
7 (for 2 μs)
-
Erase mode
7 (for 41 μs)
-
Unit
mA
1. Guaranteed by design.
Table 54. Flash memory endurance and data retention
Symbol
NEND
Min(1)
Unit
TA = –40 to +105 °C
10
kcycles
1 kcycle(2) at TA = 85 °C
30
Parameter
Endurance
Conditions
1 kcycle
tRET
Data retention
1
(2)
kcycle(2)
at TA = 105 °C
15
at TA = 125 °C
7
(2)
at TA = 55 °C
30
10 kcycles(2) at TA = 85 °C
15
10 kcycles
10
kcycles(2)
at TA = 105 °C
1. Guaranteed by characterization results.
2. Cycling performed over the whole temperature range.
128/204
DS10969 Rev 5
10
Years
STM32L475xx
6.3.11
Electrical characteristics
EMC characteristics
Susceptibility tests are performed on a sample basis during device characterization.
Functional EMS (electromagnetic susceptibility)
While a simple application is executed on the device (toggling 2 LEDs through I/O ports).
the device is stressed by two electromagnetic events until a failure occurs. The failure is
indicated by the LEDs:
•
Electrostatic discharge (ESD) (positive and negative) is applied to all device pins until
a functional disturbance occurs. This test is compliant with the IEC 61000-4-2 standard.
•
FTB: A Burst of Fast Transient voltage (positive and negative) is applied to VDD and
VSS through a 100 pF capacitor, until a functional disturbance occurs. This test is
compliant with the IEC 61000-4-4 standard.
A device reset allows normal operations to be resumed.
The test results are given in Table 55. They are based on the EMS levels and classes
defined in application note AN1709.
Table 55. EMS characteristics
Conditions
Level/
Class
Symbol
Parameter
VFESD
Voltage limits to be applied on any I/O pin
to induce a functional disturbance
VDD = 3.3 V, TA = +25 °C,
fHCLK = 80 MHz,
conforming to IEC 61000-4-2
2B
VEFTB
Fast transient voltage burst limits to be
applied through 100 pF on VDD and VSS
pins to induce a functional disturbance
VDD = 3.3 V, TA = +25 °C,
fHCLK = 80 MHz,
conforming to IEC 61000-4-4
4A
Designing hardened software to avoid noise problems
EMC characterization and optimization are performed at component level with a typical
application environment and simplified MCU software. It should be noted that good EMC
performance is highly dependent on the user application and the software in particular.
Therefore it is recommended that the user applies EMC software optimization and
prequalification tests in relation with the EMC level requested for his application.
Software recommendations
The software flowchart must include the management of runaway conditions such as:
•
Corrupted program counter
•
Unexpected reset
•
Critical Data corruption (control registers...)
DS10969 Rev 5
129/204
190
Electrical characteristics
STM32L475xx
Prequalification trials
Most of the common failures (unexpected reset and program counter corruption) can be
reproduced by manually forcing a low state on the NRST pin or the Oscillator pins for 1
second.
To complete these trials, ESD stress can be applied directly on the device, over the range of
specification values. When unexpected behavior is detected, the software can be hardened
to prevent unrecoverable errors occurring (see application note AN1015).
Electromagnetic Interference (EMI)
The electromagnetic field emitted by the device are monitored while a simple application is
executed (toggling 2 LEDs through the I/O ports). This emission test is compliant with
IEC 61967-2 standard which specifies the test board and the pin loading.
Table 56. EMI characteristics
Symbol
SEMI
6.3.12
Parameter
Conditions
Peak level
VDD = 3.6 V, TA = 25 °C,
LQFP100 package
compliant with
IEC 61967-2
Monitored
frequency band
Max vs.
[fHSE/fHCLK]
[fHSE = 8 MHz /
fHCLK = 80 MHz]
0.1 MHz to 30 MHz
-2
30 MHz to 130 MHz
-9
130 MHz to 1 GHz
6
EMI Level
Unit
dBµV
3.5
-
Electrical sensitivity characteristics
Based on three different tests (ESD, LU) using specific measurement methods, the device is
stressed in order to determine its performance in terms of electrical sensitivity.
Electrostatic discharge (ESD)
Electrostatic discharges (a positive then a negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test
conforms to the ANSI/JEDEC standard.
Table 57. ESD absolute maximum ratings
Symbol
VESD(HBM)
Ratings
Conditions
TA = +25 °C, conforming
Electrostatic discharge
to ANSI/ESDA/JEDEC
voltage (human body model)
JS-001
Electrostatic discharge
VESD(CDM) voltage (charge device
model)
TA = +25 °C,
conforming to ANSI/ESD
STM5.3.1
1. Guaranteed by characterization results.
130/204
DS10969 Rev 5
Class
Maximum
value(1)
2
2000
Unit
V
C3
250
STM32L475xx
Electrical characteristics
Static latch-up
Two complementary static tests are required on six parts to assess the latch-up
performance:
•
A supply overvoltage is applied to each power supply pin.
•
A current injection is applied to each input, output and configurable I/O pin.
These tests are compliant with EIA/JESD 78A IC latch-up standard.
Table 58. Electrical sensitivities
Symbol
LU
6.3.13
Parameter
Static latch-up class
Conditions
Class
TA = +105 °C conforming to JESD78A
II level A
I/O current injection characteristics
As a general rule, current injection to the I/O pins, due to external voltage below VSS or
above VDDIOx (for standard, 3.3 V-capable I/O pins) should be avoided during normal
product operation. However, in order to give an indication of the robustness of the
microcontroller in cases when abnormal injection accidentally happens, susceptibility tests
are performed on a sample basis during device characterization.
Functional susceptibility to I/O current injection
While a simple application is executed on the device, the device is stressed by injecting
current into the I/O pins programmed in floating input mode. While current is injected into
the I/O pin, one at a time, the device is checked for functional failures.
The failure is indicated by an out of range parameter: ADC error above a certain limit (higher
than 5 LSB TUE), out of conventional limits of induced leakage current on adjacent pins (out
of the -5 µA/+0 µA range) or other functional failure (for example reset occurrence or
oscillator frequency deviation).
The characterization results are given in Table 59.
Negative induced leakage current is caused by negative injection and positive induced
leakage current is caused by positive injection.
Table 59. I/O current injection susceptibility
Functional
susceptibility
Symbol
IINJ
Description
Unit
Negative
injection
Positive
injection
Injected current on BOOT0 pin
-0
0
Injected current on pins except PA4, PA5, BOOT0
-5
N/A(1)
Injected current on PA4, PA5 pins
-5
0
mA
1. Injection is not possible.
DS10969 Rev 5
131/204
190
Electrical characteristics
6.3.14
STM32L475xx
I/O port characteristics
General input/output characteristics
Unless otherwise specified, the parameters given in Table 60 are derived from tests
performed under the conditions summarized in Table 23: General operating conditions. All
I/Os are designed as CMOS- and TTL-compliant (except BOOT0).
Table 60. I/O static characteristics
Symbol
VIL(1)
VIH
(1)
Parameter
Conditions
132/204
Typ
Max
I/O input low level
voltage except
BOOT0
1.62 V