STM32WB50CG
STM32WB30CE
Multiprotocol wireless 32-bit MCU Arm®-based Cortex®-M4
with FPU, Bluetooth® 5.3 or 802.15.4 radio solution
Datasheet - production data
Features
• Include ST state-of-the-art patented
technology
• Radio
– 2.4 GHz
– RF transceiver supporting Bluetooth® 5.3
specification or IEEE 802.15.4-2011 PHY
and MAC, supporting Thread and
Zigbee® 3.0
– RX sensitivity: -96 dBm (Bluetooth® Low
Energy at 1 Mbps), -100 dBm (802.15.4)
– Programmable output power up to +4 dBm
with 1 dB steps
– Integrated balun to reduce BOM
– Support for 1 Mbps
– Support advertising extension
– Dedicated Arm® 32-bit Cortex® M0+ CPU
for real-time Radio layer
– Accurate RSSI to enable power control
– Suitable for systems requiring compliance
with radio frequency regulations ETSI EN
300 328, EN 300 440, FCC CFR47 Part 15
and ARIB STD-T66
– Support for external PA
– Available integrated passive device (IPD)
companion chip for optimized matching
solution (MLPF-WB-01E3)
• Ultra-low-power platform
– 2.0 to 3.6 V power supply
– – 10 °C to +85 °C temperature range
– 14 nA shutdown mode
– 700 nA Standby mode + RTC + 32 KB
RAM
– 2.25 µA Stop mode + RTC + 128 KB RAM
– Radio: Rx 7.9 mA / Tx at 0 dBm 8.8 mA
June 2022
This is information on a product in full production.
UFQFPN48
7 x 7 mm
solder pad
• Core: Arm® 32-bit Cortex®-M4 CPU with FPU,
adaptive real-time accelerator (ART™
Accelerator) allowing 0-wait-state execution
from flash memory, frequency up to 64 MHz,
MPU, 80 DMIPS and DSP instructions
• Performance benchmark
– 1.25 DMIPS/MHz (Drystone 2.1)
– 219.48 CoreMark® (3.43 CoreMark/MHz at
64 MHz)
• Energy benckmark
– 303 ULPMark™ CP score
• Supply and reset management
– Ultra-safe, low-power BOR (brownout
reset) with five selectable thresholds
– Ultra-low-power POR/PDR
– Programmable voltage detector (PVD)
– VBAT mode with RTC and backup registers
• Clock sources
– 32 MHz crystal oscillator with integrated
trimming capacitors (Radio and CPU clock)
– 32 kHz crystal oscillator for RTC (LSE)
– Internal low-power 32 kHz (±5%) RC (LSI1)
– Internal low-power 32 kHz (stability
±500 ppm) RC (LSI2)
– Internal multispeed 100 kHz to 48 MHz
oscillator, auto-trimmed by LSE (better than
±0.25% accuracy)
– High speed internal 16 MHz factory
trimmed RC (±1%)
– 1x PLL for system clock and ADC
DS13047 Rev 7
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www.st.com
STM32WB50CG STM32WB30CE
• Memories
– 1 MB flash memory with sector protection
(PCROP) against R/W operations, enabling
radio stack and application
– 128 KB SRAM, including 64 KB with
hardware parity check
– 20x 32-bit backup register
– Boot loader supporting USART, SPI, I2C
interfaces
– OTA (over the air) Bluetooth® Low Energy
and 802.15.4 update
– 1 Kbyte (128 double words) OTP
• Rich analog peripherals (down to 2.0 V)
– 12-bit ADC 2.13 Msps, up to 16-bit with
hardware oversampling, 200 µA/Msps
• System peripherals
– Inter processor communication controller
(IPCC) for communication with Bluetooth®
Low Energy and 802.15.4
– HW semaphores for resources sharing
between CPUs
– 1x DMA controller (7x channels) supporting
ADC, SPI, I2C, USART, AES, timers
– 1x USART (ISO 7816, IrDA, SPI Master,
Modbus and Smartcard mode)
– 1x SPI 32 Mbit/s
– 1x I2C (SMBus/PMBus®)
– 1x 16-bit, four channels advanced timer
– 2x 16-bit, two channels timer
– 1x 32-bit, four channels timer
– 2x 16-bit ultra-low-power timer
– 1x independent Systick
– 1x independent watchdog
– 1x window watchdog
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• Security and ID
– Secure firmware installation (SFI) for
Bluetooth® Low Energy and 802.15.4 SW
stack
– 2x hardware encryption AES maximum
256-bit for the application, the Bluetooth®
Low Energy and IEEE802.15.4
– Customer key storage / key manager
services
– HW public key authority (PKA)
– Cryptographic algorithms: RSA,
Diffie-Helman, ECC over GF(p)
– True random number generator (RNG)
– Sector protection against R/W operation
(PCROP)
– CRC calculation unit
– Die information: 96-bit unique ID
– IEEE 64-bit unique ID, possibility to derive
802.15.4 64-bit and Bluetooth® Low Energy
48-bit EUI
• Up to 30 fast I/Os, 28 of them 5 V-tolerant
• Development support
– Serial wire debug (SWD), JTAG for the
application processor
– Application cross trigger
• Package is ECOPACK2 compliant
DS13047 Rev 7
STM32WB50CG STM32WB30CE
Contents
Contents
1
Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
2
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
3
Functional overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
3.1
Architecture . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
3.2
Arm® Cortex®-M4 core with FPU . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
3.3
Memories . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
3.3.1
Adaptive real-time memory accelerator (ART Accelerator) . . . . . . . . . . 15
3.3.2
Memory protection unit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
3.3.3
Embedded flash memory . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
3.3.4
Embedded SRAM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
3.4
Security and safety . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
3.5
Boot modes and FW update . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
3.6
RF subsystem . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
3.7
3.6.1
RF front-end block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
3.6.2
BLE general description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
3.6.3
802.15.4 general description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
3.6.4
RF pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
3.6.5
Typical RF application schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Power supply management . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
3.7.1
Power supply schemes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
3.7.2
Linear voltage regulator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
3.7.3
Power supply supervisor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
3.7.4
Low-power modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
3.7.5
Reset mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
3.8
VBAT operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
3.9
Interconnect matrix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
3.10
Clocks and startup . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
3.11
General-purpose inputs/outputs (GPIOs) . . . . . . . . . . . . . . . . . . . . . . . . . 36
3.12
Direct memory access controller (DMA) . . . . . . . . . . . . . . . . . . . . . . . . . . 37
3.13
Interrupts and events . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
3.13.1
Nested vectored interrupt controller (NVIC) . . . . . . . . . . . . . . . . . . . . . . 37
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Contents
STM32WB50CG STM32WB30CE
3.13.2
3.14
Extended interrupts and events controller (EXTI) . . . . . . . . . . . . . . . . . 38
Analog to digital converter (ADC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
3.14.1
Temperature sensor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
3.14.2
Internal voltage reference (VREFINT) . . . . . . . . . . . . . . . . . . . . . . . . . . 39
3.15
True random number generator (RNG) . . . . . . . . . . . . . . . . . . . . . . . . . . 39
3.16
Timers and watchdogs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
3.16.1
Advanced-control timer (TIM1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
3.16.2
General-purpose timers (TIM2, TIM16, TIM17) . . . . . . . . . . . . . . . . . . . 40
3.16.3
Low-power timer (LPTIM1 and LPTIM2) . . . . . . . . . . . . . . . . . . . . . . . . 41
3.16.4
Independent watchdog (IWDG) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
3.16.5
System window watchdog (WWDG) . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
3.16.6
SysTick timer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
3.17
Real-time clock (RTC) and backup registers . . . . . . . . . . . . . . . . . . . . . . 42
3.18
Inter-integrated circuit interface (I2C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
3.19
Universal synchronous/asynchronous receiver transmitter (USART) . . . 44
3.20
Serial peripheral interface (SPI1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
3.21
Development support . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
3.21.1
Serial wire JTAG debug port (SWJ-DP) . . . . . . . . . . . . . . . . . . . . . . . . . 44
4
Pinouts and pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
5
Memory mapping . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52
6
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53
6.1
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Parameter conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53
6.1.1
Minimum and maximum values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53
6.1.2
Typical values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53
6.1.3
Typical curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53
6.1.4
Loading capacitor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53
6.1.5
Pin input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53
6.1.6
Power supply scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54
6.1.7
Current consumption measurement . . . . . . . . . . . . . . . . . . . . . . . . . . . 55
6.2
Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55
6.3
Operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57
6.3.1
Summary of main performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57
6.3.2
General operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57
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Contents
6.3.3
RF BLE characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58
6.3.4
RF 802.15.4 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61
6.3.5
Operating conditions at power-up / power-down . . . . . . . . . . . . . . . . . . 63
6.3.6
Embedded reset and power control block characteristics . . . . . . . . . . . 63
6.3.7
Embedded voltage reference . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64
6.3.8
Supply current characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65
6.3.9
Wake-up time from Low-power modes and voltage scaling
transition times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75
6.3.10
External clock source characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . 77
6.3.11
Internal clock source characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . 80
6.3.12
PLL characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 86
6.3.13
Flash memory characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 87
6.3.14
EMC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 88
6.3.15
Electrical sensitivity characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . 89
6.3.16
I/O current injection characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90
6.3.17
I/O port characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 91
6.3.18
NRST pin characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 94
6.3.19
Analog switches booster . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 96
6.3.20
Analog-to-Digital converter characteristics . . . . . . . . . . . . . . . . . . . . . . 97
6.3.21
Temperature sensor characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . 104
6.3.22
VBAT monitoring characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 104
6.3.23
Timer characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 104
6.3.24
Communication interfaces characteristics . . . . . . . . . . . . . . . . . . . . . . 105
Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 111
7.1
UFQFPN48 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 111
7.2
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .114
7.2.1
Reference document . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 114
7.2.2
Selecting the product temperature range . . . . . . . . . . . . . . . . . . . . . . 114
8
Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 116
9
Important security notice . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 117
10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 118
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List of tables
STM32WB50CG STM32WB30CE
List of tables
Table 1.
Table 2.
Table 3.
Table 4.
Table 5.
Table 6.
Table 7.
Table 8.
Table 9.
Table 10.
Table 11.
Table 12.
Table 13.
Table 14.
Table 15.
Table 16.
Table 17.
Table 18.
Table 19.
Table 20.
Table 21.
Table 22.
Table 23.
Table 24.
Table 25.
Table 26.
Table 27.
Table 28.
Table 29.
Table 30.
Table 31.
Table 32.
Table 33.
Table 34.
Table 35.
Table 36.
Table 37.
Table 38.
Table 39.
Table 40.
Table 41.
Table 42.
Table 43.
Table 44.
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STM32WB50CG and STM32WB30CE device features and peripheral counts . . . . . . . . . 11
Access status vs. readout protection level and execution modes . . . . . . . . . . . . . . . . . . . 16
RF pin list . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Typical external components . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Features over all modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
STM32WB50CG and STM32WB30CE modes overview . . . . . . . . . . . . . . . . . . . . . . . . . . 30
STM32WB50CG and STM32WB30CE CPU1 peripherals interconnect matrix . . . . . . . . . 32
DMA implementation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
Temperature sensor calibration values. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
Internal voltage reference calibration values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
Timer features. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
I2C implementation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
Legend/abbreviations used in the pinout table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
STM32WB50CG and STM32WB30CE pin and ball definitions . . . . . . . . . . . . . . . . . . . . . 47
Alternate functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50
Voltage characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55
Current characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56
Thermal characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56
Main performance at VDD = 3.3 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57
General operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57
RF transmitter BLE characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58
RF transmitter BLE characteristics (1 Mbps) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58
RF receiver BLE characteristics (1 Mbps) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 59
RF BLE power consumption for VDD = 3.3 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60
RF transmitter 802.15.4 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61
RF receiver 802.15.4 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61
RF 802.15.4 power consumption for VDD = 3.3 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62
Operating conditions at power-up / power-down . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 63
Embedded reset and power control block characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 63
Embedded internal voltage reference . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64
Current consumption in Run and Low-power run modes, code with data processing
running from flash, ART enable (Cache ON Prefetch OFF), VDD = 3.3 V . . . . . . . . . . . . . 66
Current consumption in Run and Low-power run modes, code with data processing
running from SRAM1, VDD = 3.3 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 67
Typical current consumption in Run and Low-power run modes, with different codes
running from flash, ART enable (Cache ON Prefetch OFF), VDD = 3.3 V . . . . . . . . . . . . . 67
Typical current consumption in Run and Low-power run modes,
with different codes running from SRAM1, VDD = 3.3 V . . . . . . . . . . . . . . . . . . . . . . . . . . 68
Current consumption in Sleep and Low-power sleep modes, flash memory ON . . . . . . . . 68
Current consumption in Low-power sleep modes, flash memory in Power down. . . . . . . . 69
Current consumption in Stop 2 mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 69
Current consumption in Stop 1 mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70
Current consumption in Stop 0 mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70
Current consumption in Standby mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 71
Current consumption in Shutdown mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72
Current consumption in VBAT mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72
Current under Reset condition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72
Peripheral current consumption . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 74
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Table 45.
Table 46.
Table 47.
Table 48.
Table 49.
Table 50.
Table 51.
Table 52.
Table 53.
Table 54.
Table 55.
Table 56.
Table 57.
Table 58.
Table 59.
Table 60.
Table 61.
Table 62.
Table 63.
Table 64.
Table 65.
Table 66.
Table 67.
Table 68.
Table 69.
Table 70.
Table 71.
Table 72.
Table 73.
Table 74.
Table 75.
Table 76.
Table 77.
Table 78.
Table 79.
Table 80.
Table 81.
Table 82.
Table 83.
Table 84.
Table 85.
Table 86.
Table 87.
List of tables
Low-power mode wake-up timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75
Regulator modes transition times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 76
Wake-up time using USART . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 77
HSE crystal requirements . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 77
HSE clock source characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 77
HSE oscillator characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 78
Low-speed external user clock characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 79
HSI16 oscillator characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80
MSI oscillator characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .81
HSI48 oscillator characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 84
LSI1 oscillator characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85
LSI2 oscillator characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85
PLL characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 86
Flash memory characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 87
Flash memory endurance and data retention . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 87
EMS characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 88
EMI characteristics for fHSE / fCPUM4, fCPUM0 = 32 MHz / 64 MHz, 32 MHz . . . . . . . . 89
ESD absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 89
Electrical sensitivities . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90
I/O current injection susceptibility . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90
I/O static characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 91
Output voltage characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 93
I/O AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 93
NRST pin characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 95
Analog switches booster characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 96
ADC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 97
ADC sampling time . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 98
ADC accuracy - Limited test conditions 1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100
ADC accuracy - Limited test conditions 2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 101
ADC accuracy - Limited test conditions 3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 102
TS characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 104
VBAT monitoring characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 104
VBAT charging characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 104
TIMx characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 105
IWDG min/max timeout period at 32 kHz (LSI1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 105
Minimum I2CCLK frequency in all I2C modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 106
I2C analog filter characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 106
SPI characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 107
JTAG characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 109
SWD characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110
UFQFPN48 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 112
Package thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 114
Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 118
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List of figures
STM32WB50CG STM32WB30CE
List of figures
Figure 1.
Figure 2.
Figure 3.
Figure 4.
Figure 5.
Figure 6.
Figure 7.
Figure 8.
Figure 9.
Figure 10.
Figure 11.
Figure 12.
Figure 13.
Figure 14.
Figure 15.
Figure 16.
Figure 17.
Figure 18.
Figure 19.
Figure 20.
Figure 21.
Figure 22.
Figure 23.
Figure 24.
Figure 25.
Figure 26.
Figure 27.
Figure 28.
Figure 29.
Figure 30.
8/121
STM32WB50CGxx block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
STM32WB30CExx block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
STM32WB50CG and STM32WB30CE RF front-end block diagram . . . . . . . . . . . . . . . . . 19
External components for the RF part . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Power-up/down sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Power supply overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Clock tree . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
STM32WB50CG and STM32WB30CE UFQFPN48 pinout(1) (2). . . . . . . . . . . . . . . . . . . . . 46
Pin loading conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53
Pin input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53
Power supply scheme. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54
Current consumption measurement scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55
Typical link quality indicator code vs. Rx level . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62
Typical energy detection (T = 27°C, VDD = 3.3 V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62
VREFINT vs. temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65
Typical application with a 32.768 kHz crystal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 79
HSI16 frequency vs. temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80
Typical current consumption vs. MSI frequency . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83
HSI48 frequency vs. temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85
I/O input characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 92
Recommended NRST pin protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 95
ADC accuracy characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 103
Typical connection diagram using the ADC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 103
SPI timing diagram - Slave mode and CPHA = 0 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 108
SPI timing diagram - Slave mode and CPHA = 1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 108
SPI timing diagram - master mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 109
UFQFPN48 outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 111
UFQFPN48 recommended footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 112
STM32WB50CG UFQFPN48 marking example (package top view) . . . . . . . . . . . . . . . . 113
STM32WB30CE UFQFPN48 marking example (package top view) . . . . . . . . . . . . . . . . 113
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1
Introduction
Introduction
This document provides the ordering information and mechanical device characteristics of
the STM32WB50CG and STM32WB30CE microcontrollers, based on Arm® cores(a).
This document must be read in conjunction with the reference manual (RM0471), available
from the STMicroelectronics website www.st.com.
For information on the device errata with respect to the datasheet and reference manual
refer to the STM32WB50CG and STM32WB30CE errata sheet (ES0492), available from the
STMicroelectronics website www.st.com.
For information on the Arm® Cortex®-M4 and Cortex®-M0+ cores, refer, respectively, to the
Cortex®-M4 Technical Reference Manual and to the Cortex®-M0+ Technical Reference
Manual, both available on the www.arm.com website.
For information on 802.15.4 refer to the IEEE website (www.ieee.org).
For information on Bluetooth® refer to www.bluetooth.com.
a. Arm is a registered trademark of Arm Limited (or its subsidiaries) in the US and/or elsewhere.
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45
Description
2
STM32WB50CG STM32WB30CE
Description
The STM32WB50CG and STM32WB30CE multiprotocol wireless and ultra-low-power
device embeds a powerful and ultra-low-power radio compliant with the Bluetooth® Low
Energy SIG specification 5.3 or with IEEE 802.15.4-2011. It contains a dedicated Arm®
Cortex®-M0+ for performing all the real-time low layer operation.
The devices are designed to be extremely low-power and are based on the highperformance Arm® Cortex®-M4 32-bit RISC core operating at a frequency of up to 64 MHz.
This core features a Floating point unit (FPU) single precision that supports all Arm®
single-precision data-processing instructions and data types. It also implements a full set of
DSP instructions and a memory protection unit (MPU) that enhances application security.
Enhanced inter-processor communication is provided by the IPCC with six bidirectional
channels. The HSEM provides hardware semaphores used to share common resources
between the two processors.
The devices embed high-speed memories (1 Mbyte of flash memory for STM32WB50xx,
512 Kbytes for STM32WB30xx, 128 Kbytes of SRAM for STM32WB50xx, 96 Kbytes for
STM32WB30xx) and an extensive range of enhanced I/Os and peripherals.
Direct data transfer between memory and peripherals and from memory to memory is
supported by seven DMA channels with a full flexible channel mapping by the DMAMUX
peripheral.
The devices feature several mechanisms for embedded flash memory and SRAM: readout
protection, write protection and proprietary code readout protection. Portions of the memory
can be secured for Cortex® -M0+ exclusive access.
The AES encryption engine, PKA and RNG enable lower layer MAC and upper layer
cryptography. A customer key storage feature may be used to keep the keys hidden.
The devices offer a fast 16-bit ADC.
These devices embed a low-power RTC, one advanced 16-bit timer, one general-purpose
32-bit timer, two general-purpose 16-bit timers, and two 16-bit low-power timers.
The STM32WB50CG and STM32WB30CE also feature standard and advanced
communication interfaces, namely one USART (ISO 7816, IrDA, Modbus and Smartcard
mode), one I2C (SMBus/PMBus), one SPI up to 32 MHz.
The STM32WB50CG and STM32WB30CE operate in the -10 to +85 °C (+105 °C junction)
temperature range from a 2.0 to 3.6 V power supply. A comprehensive set of power-saving
modes enables the design of low-power applications.
The devices include independent power supplies for analog input for ADC.
A VBAT dedicated supply allows the device to back up the LSE 32.768 kHz oscillator, the
RTC and the backup registers, thus enabling the STM32WB50CG and STM32WB30CE to
supply these functions even if the main VDD is not present through a CR2032-like battery, a
Supercap or a small rechargeable battery.
The STM32WB50CG and STM32WB30CE are available in a 48-pin UFQFPN package.
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Description
Table 1. STM32WB50CG and STM32WB30CE device features and peripheral counts
Feature
STM32WB50CG
STM32WB30CE
1 M bytes
512 Kbytes
SRAM density
128 Kbytes
96 Kbytes
SRAM1
64 Kbytes
32 Kbytes
SRAM2
64 Kbytes
64 Kbytes
Flash memory density
BLE
5.3
802.15.4
Yes
Advanced
Timers
1 (16 bits)
General purpose
2 (16 bits) + 1 (32 bits)
Low power
2 (16 bits)
SysTick
1
SPI
Communication
I2C
interface
USART(1)
1
1
RTC
1
Tamper pin
1
Wake-up pin
2
GPIOs
30
1
12-bit ADC
Number of channels
13 channels
(incl. 3 internal)
Yes
Internal Vref
Max CPU frequency
64 MHz
Ambient operating temperature:-10 to +85 °C
Junction temperature: -10 to 105 °C
Operating temperature
Operating voltage
2.0 to 3.6 V
Package
UFQFPN48, 7 mm x 7 mm, 0.5 mm pitch, solder pad
1. USART peripheral can be used as SPI.
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45
Description
STM32WB50CG STM32WB30CE
Figure 1. STM32WB50CGxx block diagram
BLE / 802.15.4
RF IP
LSI2
32 kHz
HSE2
32 MHz
32 kB SRAM2a
Backup Memory
WKUP
BLE
32 kB SRAM2b
Memory
RTC2
LSE
32 kHz
I-WDG
LSI1
32 kHz
TAMP
Cortex-M4
(DSP)
CTI
802.15.4
PKA + RAM
NVIC
FPU
RCC2
BLE IP
ARBITER
+ ART
1 MB Flash
Shared Memory
JTAG/SWD
Cortex-M0+
AHB
asynchronous
AHB Lite
NVIC
HSEM
AHB Lite (Shared)
CTI
APB asynchronous
RNG
IPCC
RCC + CSS
MPU
PWR
HSI 1%
16 MHz
PLL1
MSI up to
48 MHz
Power Supply POR/
PDR/BOR/PVD/AVD
DMA1 7 channels
AHB Lite
EXTI
AES2
64 KB SRAM1
DMAMUX
Memory
GPIO Ports
A, B, C, E, H
Temp (oC) sensor
CRC
ADC1 12-bit ULP
2.13 Msps / 13 ch
RC48
WWDG
DBG
SPI1
I2C1
APB
LPTIM1
TIM1
LPTIM2
TIM2
USART1
SYSCFG
TIM16, TIM17
MSv63012V2
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Description
Figure 2. STM32WB30CExx block diagram
AHB Lite
NVIC
Cortex-M0+
AHB
asynchronous
CTI
APB asynchronous
RCC2
BLE IP
802.15.4
BLE / 802.15.4
RF IP
RTC2
LSE
32 kHz
I-WDG
LSI1
32 kHz
TAMP
HSEM
AHB Lite (Shared)
Cortex-M4
(DSP)
CTI
WKUP
BLE
PKA + RAM
NVIC
FPU
HSE2
32 MHz
32 kB SRAM2b
Arbiter + ART
Shared Memory
512 KB Flash
JTAG/SWD
32 KB SRAM2a
Backup
LSI2
32 kHz
RNG
IPCC
RCC + CSS
MPU
PWR
HSI 1%
16 MHz
PLL1
MSI up to
48 MHz
Power Supply POR/
PDR/BOR/PVD/AVD
AHB Lite
EXTI
AES2
DMA1 7 channels
DMAMUX
GPIO Ports
A, B, C, E, H
CRC
RC48
WWDG
32 KB SRAM1
DBG
Temp (oC) sensor
ADC1 12-bit ULP
2.13 Msps / 13 ch
SPI1
I2C1
APB
LPTIM1
TIM1
LPTIM2
TIM2
USART1
SYSCFG
TIM16, TIM17
MS53595V1
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Functional overview
STM32WB50CG STM32WB30CE
3
Functional overview
3.1
Architecture
The STM32WB50CG and STM32WB30CE multiprotocol wireless device embeds a BLE or
an 802.15.4 RF subsystem that interfaces with a generic microcontroller subsystem using
an Arm® Cortex®-M4 CPU (called CPU1) on which the host application resides.
The RF subsystem is composed of an RF analog front end, BLE or 802.15.4 digital MAC
blocks as well as of a dedicated Arm® Cortex®-M0+ microcontroller (called CPU2), plus
proprietary peripherals. The RF subsystem performs all of the BLE or 802.15.4 low layer
stack, reducing the interaction with the CPU1 to high level exchanges.
Some functions are shared between the RF subsystem CPU (CPU2) and the Host CPU
(CPU1):
•
Flash memories
•
SRAM1, SRAM2a and SRAM2b (SRAM2a can be retained in Standby mode)
•
Security peripherals (RNG, PKA)
•
Clock RCC
•
Power control (PWR)
The communication and the sharing of peripherals between the RF subsystem and the
Cortex®-M4 CPU is performed through a dedicated inter processor communication
controller (IPCC) and semaphore mechanism (HSEM).
3.2
Arm® Cortex®-M4 core with FPU
The Arm® Cortex®-M4 with FPU is a processor for embedded systems. It has been
developed to provide a low-cost platform that meets the needs of MCU implementation, with
a reduced pin count and low-power consumption, while delivering outstanding
computational performance and an advanced response to interrupts.
The Arm® Cortex®-M4 with FPU 32-bit RISC processor features exceptional
code-efficiency, delivering the high-performance expected from an Arm® core in the
memory size usually associated with 8- and 16-bit devices.
The processor supports a set of DSP instructions enabling efficient signal processing and
complex algorithm execution.
Its single precision FPU speeds up software development by using metalanguage
development tools, while avoiding saturation.
With its embedded Arm® core, the STM32WB50CG and STM32WB30CE are compatible
with all Arm® tools and software.
Figure 1 and Figure 2 show the general block diagram of, respectively, the STM32WB50CG
and STM32WB30CE devices.
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Functional overview
3.3
Memories
3.3.1
Adaptive real-time memory accelerator (ART Accelerator)
The ART Accelerator is a memory accelerator optimized for STM32 industry-standard Arm®
Cortex®-M4 processors. It balances the inherent performance advantage of the Arm®
Cortex®-M4 over flash memory technologies, which normally require the processor to wait
for the flash memory at higher frequencies.
To release the processor near 80 DMIPS performance at 64 MHz, the accelerator
implements an instruction prefetch queue and branch cache, which increases program
execution speed from the 64-bit flash memory. Based on CoreMark benchmark, the
performance achieved thanks to the ART accelerator is equivalent to 0 wait state program
execution from flash memory at a CPU frequency up to 64 MHz.
3.3.2
Memory protection unit
The memory protection unit (MPU) is used to manage the CPU1 accesses to memory to
prevent one task to accidentally corrupt the memory or resources used by any other active
task. This memory area is organized into up to eight protected areas, which can be divided
up into eight subareas. The protection area sizes are between 32 bytes and the whole
4 Gbytes of addressable memory.
The MPU is especially helpful for applications where some critical or certified code must be
protected against the misbehavior of other tasks. It is usually managed by an RTOS
(real-time operating system). If a program accesses a memory location prohibited by the
MPU, the RTOS detects it and takes action. In an RTOS environment, the kernel can
dynamically update the MPU area setting, based on the process to be executed.
The MPU is optional and can be bypassed for applications that do not need it.
3.3.3
Embedded flash memory
The STM32WB50CG and STM32WB30CE devices feature, respectively, 1 Mbyte and
512 Kbytes of embedded flash memory available for storing programs and data, as well as
some customer keys.
Flexible protections can be configured thanks to option bytes:
•
Readout protection (RDP) to protect the whole memory. Three levels are available:
–
Level 0: no readout protection
–
Level 1: memory readout protection: the flash memory cannot be read from or
written to if either debug features are connected, boot in SRAM or bootloader is
selected
–
Level 2: chip readout protection: debug features (Cortex®-M4 and Cortex®-M0+
JTAG and serial wire), boot in SRAM and bootloader selection are disabled (JTAG
fuse). This selection is irreversible.
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45
Functional overview
STM32WB50CG STM32WB30CE
Table 2. Access status vs. readout protection level and execution modes
Area
Debug, boot from SRAM or boot
from system memory (loader)
User execution
Protection
level
Read
Write
Erase
Read
Write
Erase
Main
memory
1
Yes
Yes
Yes
No
No
No
2
Yes
Yes
Yes
N/A
N/A
N/A
System
memory
1
Yes
No
No
Yes
No
No
2
Yes
No
No
N/A
N/A
N/A
Option
bytes
1
Yes
Yes
Yes
Backup
registers
SRAM2a
SRAM2b
2
Yes
(1)
No
1
Yes
Yes
2
Yes
Yes
1
Yes
Yes
2
Yes
Yes
No
Yes
Yes
Yes
(1)
N/A
N/A
N/A
(2)
No
No
N/A(2)
N/A
N/A
N/A
No
No
No(2)
N/A
N/A
N/A
N/A
N/A
(2)
Yes
Yes
1. The option byte can be modified by the RF subsystem.
2. Erased when RDP changes from Level 1 to Level 0.
•
Write protection (WRP): the protected area is protected against erasing and
programming. Two areas can be selected, with 4-Kbyte granularity.
•
Proprietary code readout protection (PCROP): two parts of the flash memory can be
protected against read and write from third parties. The protected area is execute-only:
it can only be reached by the STM32 CPU, as an instruction code, while all other
accesses (DMA, debug and CPU data read, write and erase) are strictly prohibited.
Two areas can be selected, with 2-Kbyte granularity. An additional option bit
(PCROP_RDP) makes possible to select if the PCROP area is erased or not when the
RDP protection is changed from Level 1 to Level 0.
A section of the flash memory is secured for the RF subsystem CPU2, and cannot be
accessed by the host CPU1.
The whole non-volatile memory embeds the error correction code (ECC) feature supporting:
•
single error detection and correction
•
double error detection
•
the address of the ECC fail can be read in the ECC register
The embedded flash memory is shared between CPU1 and CPU2 on a time sharing basis.
A dedicated HW mechanism allows both CPUs to perform Write/Erase operations.
3.3.4
Embedded SRAM
The STM32WB50CG device features 128 Kbytes of embedded SRAM, split in three blocks:
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•
SRAM1: 64 Kbytes mapped at address 0x2000 0000
•
SRAM2a: 32 Kbytes located at address 0x2003 0000 also mirrored at 0x1000 0000,
with hardware parity check (this SRAM can be retained in Standby mode)
•
SRAM2b: 32 Kbytes located at address 0x2003 8000 (contiguous with SRAM2a) and
mirrored at 0x1000 8000 with hardware parity check
DS13047 Rev 7
STM32WB50CG STM32WB30CE
Functional overview
The STM32WB30CG device features 96 Kbytes of embedded SRAM, split in three blocks:
•
SRAM1: 32 Kbytes mapped at address 0x2000 0000
•
SRAM2a: 32 Kbytes located at address 0x2003 0000 also mirrored at 0x1000 0000,
with hardware parity check (this SRAM can be retained in Standby mode)
•
SRAM2b: 32 Kbytes located at address 0x2003 8000 (contiguous with SRAM2a) and
mirrored at 0x1000 8000 with hardware parity check
SRAM2a and SRAM2b can be write-protected, with 1-Kbyte granularity. A section of the
SRAM2a and SRAM2b is secured for the RF sub-system and cannot be accessed by the
host CPU1.
The SRAMs can be accessed in read/write with 0 wait states for all CPU1 and CPU2 clock
speeds.
3.4
Security and safety
The STM32WB50CG and STM32WB30CE contain many security blocks both for the BLE or
IEEE 802.15.4 and the Host application.
It includes:
•
Customer storage of the BLE or 802.15.4 keys
•
Secure flash memory partition for RF subsystem-only access
•
Secure SRAM partition, that can be accessed only by the RF subsystem
•
True random number generator (RNG)
•
Advance encryption standard hardware accelerators (AES-256bit, supporting chaining
modes ECB, CBC, CTR, GCM, GMAC, CCM)
•
Private key acceleration (PKA) including:
•
–
Modular arithmetic including exponentiation with maximum modulo size of 3136
bits
–
Elliptic curves over prime field scalar multiplication, ECDSA signature, ECDSA
verification with maximum modulo size of 521 bits
Cyclic redundancy check calculation unit (CRC)
A specific mechanism is in place to ensure that all the code executed by the RF subsystem
CPU2 can be secure, whatever the Host application.
3.5
Boot modes and FW update
At startup, BOOT0 pin and BOOT1 option bit are used to select one of three boot options:
•
Boot from user flash
•
Boot from system memory
•
Boot from embedded SRAM
The devices always boot on CPU1 core. The embedded bootloader code makes it possible
to boot from various peripherals:
•
UART
•
I2C
•
SPI
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Functional overview
STM32WB50CG STM32WB30CE
Secure Firmware update (especially BLE or 802.15.4) from system boot and over the air is
provided.
3.6
RF subsystem
The STM32WB50CG and STM32WB30CE embed an ultra-low power multi-standard radio
Bluetooth® Low Energy (BLE) or 802.15.4 network processor, compliant with Bluetooth®
specification 5.3 and IEEE® 802.15.4-2011. The BLE features 1 Mbps transfer rate,
supports multiple roles simultaneously acting at the same time as BLE sensor and hub
device, embeds Elliptic Curve Diffie-Hellman (ECDH) key agreement protocol, thus
ensuring a secure connection.
The BLE stack or 802.15.4 Low Level layer run on an embedded Arm® Cortex®-M0+ core
(CPU2). The stack is stored on the embedded flash memory, which is also shared with the
Arm® Cortex®-M4 (CPU1) application, making it possible in-field stack update.
3.6.1
RF front-end block diagram
The RF front-end is based on a direct modulation of the carrier in Tx, and uses a low IF
architecture in Rx mode.
Thanks to an internal transformer at RF pins, the circuit directly interfaces the antenna
(single ended connection, impedance close to 50 Ω). The natural bandpass behavior of the
internal transformer, simplifies outside circuitry aimed for harmonic filtering and out of band
interferer rejection.
In Transmit mode, the maximum output power is user selectable through the programmable
LDO voltage of the power amplifier. A linearized, smoothed analog control offers clean
power ramp-up.
In receive mode the circuit can be used in standard high performance or in reduced power
consumption (user programmable). The Automatic gain control (AGC) is able to reduce the
chain gain at both RF and IF locations, for optimized interference rejection. Thanks to the
use of complex filtering and highly accurate I/Q architecture, high sensitivity and excellent
linearity can be achieved.
The bill of material is reduced thanks to the high degree of integration. The radio frequency
source is synthesized form an external 32 MHz crystal that does not need any external
trimming capacitor network thanks to a dual network of user programmable integrated
capacitors.
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STM32WB50CG STM32WB30CE
Functional overview
AGC
control
Timer and Power
control
AGC
RF control
Interrupt
Wakeup
AHB
BLE
modulator
APB
BLE
demodulator
APB
802.15.4
modulator
G
BP
filter
ADC
BLE
controller
ADC
RF_TX_MOD_EXT_PA
Figure 3. STM32WB50CG and STM32WB30CE RF front-end block diagram
LNA
G
RF1
PLL
See
note
PA ramp
generator
Adjust
802.15.4
demodulator
PA
Wakeup
Modulator
Interrupt
802.15.4
MAC
Adjust
Trimmed
bias
HSE
LDO
LDO
VDD
OSC_IN
LDO
Max PA
level
VDDRF
OSC_OUT
32 MHz
Note: UFQFPN48: VSS through exposed pad, and VSSRF pin must be connected to ground plane
MSv63013V2
3.6.2
BLE general description
The BLE block is a master/slave processor, compliant with Bluetooth specification 5.3
standard.
It integrates a 2.4 GHz RF transceiver and a powerful Cortex®-M0+ core, on which a
complete power-optimized stack for Bluetooth Low Energy protocol runs, providing
master / slave role support
•
GAP: central, peripheral, observer or broadcaster roles
•
ATT/GATT: client and server
•
SM: privacy, authentication and authorization
•
L2CAP
•
Link layer: AES-128 encryption and decryption
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Functional overview
STM32WB50CG STM32WB30CE
In addition, according to Bluetooth specification 5.3, the BLE block provides:
•
Multiple roles simultaneous support
•
Master/slave and multiple roles simultaneously
•
LE data packet length extension (making it possible to reach 800 kbps at application
level)
•
LE privacy 1.2
•
LE secure connections
•
Flexible Internet connectivity options
The devices support Piconet topology (master with up to eight slaves), Scatternet topology
(master with up to six slaves and dynamically as slave with up to two masters, or master
with up to four slaves and dynamically as slave with up to four masters), and multi slave
topology (slave with up to eight masters).
The device allows the applications to meet the tight peak current requirements imposed by
the use of standard coin cell batteries.
Ultra-low-power sleep modes and very short transition time between operating modes result
in very low average current consumption during real operating conditions, resulting in longer
battery life.
The BLE block integrates a full bandpass balun, thus reducing the need for external
components.
The link between the Cortex®-M4 application processor (CPU1) running the application, and
the BLE stack running on the dedicated Cortex®-M0+ (CPU2) is performed through a
normalized API, using a dedicated IPCC.
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STM32WB50CG STM32WB30CE
3.6.3
Functional overview
802.15.4 general description
The STM32WB50CG and STM32WB30CE embed a dedicated 802.15.4 hardware MAC:
•
Support for 802.15.4 release 2011
•
Advanced MAC frame filtering; hardwired firewall: Programmable filters based on
source/destination addresses, frame version, security enabled, frame type
•
256-byte RX FIFO; Up to 8 frames capacity, additional frame information (timing, mean
RSSI, LQI)
•
128-byte TX FIFO with retention
–
3.6.4
Content not lost, retransmissions possible under CPU2 control
•
Automatic frame acknowledgment, with programmable delay
•
Advanced channel access features
–
Full CSMA-CA support
–
Superframe timer
–
Beaconing support (require LSE)
–
Flexible TX control with programmable delay
•
Configuration registers with retention available down to Standby mode for
software/auto-restore
•
Autonomous sniffer, wake-up based on timer or CPU2 request
•
Automatic frame transmission/reception/sleep periods, Interrupt to the CPU2 on
particular events
RF pin description
The RF block contains dedicated pins, listed in Table 3.
:
Name
Table 3. RF pin list
Type
RF1
Description
RF Input/output, must be connected to the antenna through a low-pass matching network
OSC_OUT
I/O
OSC_IN
RF_TX_
MOD_EXT_PA
VDDRF
(1)
VSSRF
32 MHz main oscillator, also used as HSE source
External PA transmit control
VDD Dedicated supply, must be connected to VDD
VSS
To be connected to GND
1. The exposed pad must be connected to GND plane for correct RF operation.
3.6.5
Typical RF application schematic
The schematic in Figure 4 and the external components listed in Table 3 are purely
indicative. For more details refer to the “Reference design” provided in separate documents.
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Functional overview
STM32WB50CG STM32WB30CE
Figure 4. External components for the RF part
OSC_IN
X1
32 MHz
OSC_OUT
VDD
VDDRF
STM32WB
microcontroller
C1
Antenna
VSSRF
(including exposed pad)
Lf1
Cf1
RF1
Cf2
Antenna
filter
Lf2
MS53575V1
Table 4. Typical external components
Component
C1
X1
Antenna filter
Antenna
Description
Decoupling capacitance for RF
32 MHz
crystal(1)
Antenna filter and matching network
2.4 GHz band antenna
Value
100 nF // 100 pF
32 MHz
Refer to AN5165, on www.st.com
-
1. e.g. NDK reference: NX2016SA 32 MHz EXS00A-CS06654.
Note:
For more details refer to AN5165 “Development of RF hardware using STM32WB
microcontrollers” available on www.st.com.
3.7
Power supply management
3.7.1
Power supply schemes
The devices have different voltage supplies (see Figure 6) and can operate within the
following voltage ranges:
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•
VDD = 2.0 to 3.6 V: external power supply for I/Os (VDDIO), the internal regulator and
system functions such as RF, reset, power management and internal clocks. It is
provided externally through VDD pins. VDDRF must be always connected to VDD pins.
•
VDDA = 2.0 to 3.6 V: external analog power supply for ADC,. The VDDA voltage level
can be independent from the VDD voltage. When not used VDDA must be connected to
VDD.
DS13047 Rev 7
STM32WB50CG STM32WB30CE
Functional overview
During power up/down, the following power sequence requirements must be respected:
•
When VDD is below 1 V the other power supply (VDDA), must remain below
VDD + 300 mV
•
When VDD is above 1 V all power supplies are independent.
Figure 5. Power-up/down sequence
V
3.6
VDDX(1)
VDD
VBOR0
1
0.3
Power-on
Invalid supply area
Operating mode
VDDX < VDD + 300 mV
Power-down
time
VDDX independent from VDD
MSv47490V1
1. VDDX refers to VDDA.
During the power down phase, VDD can temporarily become lower than other supplies only
if the energy provided to the MCU remains below 1 mJ. This allows the external decoupling
capacitors to be discharged with different time constants during the power down transient
phase.
Note:
VDD and VDDRF must be wired together, so they can follow the same voltage sequence.
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Functional overview
STM32WB50CG STM32WB30CE
Figure 6. Power supply overview
Level shifter
Interruptible domain (VDD12I)
IOs
(CPU1, CPU2,
peripherals,
SRAM1,
SRAM2b)
IO
logic
On domain (VDD12O)
SysConfig, EXTI,
RCC, PwrCtrl,
LPTIM
Power
switch
Power
switch
VSS
VSS
VDD
VSS
MR
RFR
LPR
VDDRF
RF domain
Backup domain
VBKP12
Radio
SRAM2a
Power switch
VSSRF
VSS
VSS
(including exposed pad)
Wakeup domain (VDDIO)
VDD
HSI, HSE,
PLL,
LSI1, LSI2,
IWDG, RF
Power switch
VSW
VBAT
VSS
Switch domain (VSW)
VBAT
IOs
IO
logic
LSE, RTC,
backup registers
VSS
VSS
Analog domain
VDDA
ADC
VREF+
=
=
VREFVSS
MS53186V2
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STM32WB50CG STM32WB30CE
3.7.2
Functional overview
Linear voltage regulator
Three embedded linear voltage regulators supply most of the digital and RF circuitries, the
main regulator (MR), the low-power regulator (LPR) and the RF regulator (RFR).
•
The MR is used in the Run and Sleep modes and in the Stop 0 mode.
•
The LPR is used in Low-Power Run, Low-Power Sleep, Stop 1 and Stop 2 modes. It is
also used to supply the SRAM2a in Standby with retention.
•
The RFR is used to supply the RF analog part, its activity is automatically managed by
the RF subsystem.
All the regulators are in power-down in Standby and Shutdown modes: the regulator output
is in high impedance, and the kernel circuitry is powered down, inducing zero consumption.
VCORE can also be supplied by the low-power regulator, the main regulator being switched
off. The system is then in Low-power run mode. In this case the CPU is running at up to
2 MHz, and peripherals with independent clock can be clocked by HSI16 (in this mode the
RF subsystem is not available).
3.7.3
Power supply supervisor
An integrated ultra-low-power brown-out reset (BOR) is active in all modes except
Shutdown ensuring proper operation after power-on and during power down. The devices
remain in reset mode when the monitored supply voltage VDD is below a specified
threshold, without the need for an external reset circuit.
The lowest BOR level is 2.0 V at power on, and other higher thresholds can be selected
through option bytes.The device features an embedded programmable voltage detector
(PVD) that monitors the VDD power supply and compares it with the VPVD threshold. An
interrupt can be generated when VDD drops below the VPVD threshold and/or when VDD is
higher than the VPVD threshold. The interrupt service routine can then generate a warning
message and/or put the MCU into a safe state. The PVD is enabled by software.
3.7.4
Low-power modes
These ultra-low-power devices support several low-power modes to achieve the best
compromise between low-power consumption, short startup time, available peripherals and
available wake-up sources.
By default, the microcontroller is in Run mode, after a system or a power on reset. It is up to
the user to select one of the low-power modes described below:
•
Sleep
In Sleep mode, only the CPU1 is stopped. All peripherals, including the RF subsystem,
continue to operate and can wake up the CPU when an interrupt/event occurs.
•
Low-power run
This mode is achieved with VCORE supplied by the low-power regulator to minimize
the regulator operating current. The code can be executed from SRAM or from the
flash memory, and the CPU1 frequency is limited to 2 MHz. The peripherals with
independent clock can be clocked by HSI16. The RF subsystem is not available in this
mode and must be OFF.
•
Low-power sleep
This mode is entered from the low-power run mode. Only the CPU1 clock is stopped.
When wake-up is triggered by an event or an interrupt, the system reverts to the
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45
Functional overview
STM32WB50CG STM32WB30CE
low-power run mode. The RF subsystem is not available in this mode and must be
OFF.
•
Stop 0, Stop 1 and Stop 2
Stop modes achieve the lowest power consumption while retaining the content of all
the SRAM and registers. The LSE (or LSI) is still running.
The RTC can remain active (Stop mode with RTC, Stop mode without RTC).
Some peripherals with wake-up capability can enable the HSI16 RC during Stop modes
to detect their wake-up condition.
Three modes are available: Stop 0, Stop 1 and Stop 2. In Stop 2 mode, most of the
VCORE domain is put in a lower leakage mode.
Stop 1 offers the largest number of active peripherals and wake-up sources, a smaller
wake-up time but a higher consumption than Stop 2. In Stop 0 mode the main regulator
remains ON, allowing a very fast wake-up time but with higher consumption.
In these modes the RF subsystem can wait for incoming events in all Stop modes.
The system clock when exiting from Stop 0, Stop1 or Stop2 modes can be either MSI
up to 48 MHz or HSI16 if the RF subsystem is disabled. If the RF subsystem is used
the exits must be set to HSI16 only.
•
Standby
The Standby mode is used to achieve the lowest power consumption with BOR. The
internal regulator is switched off so that the VCORE domain is powered off.
The RTC can remain active (Standby mode with RTC).
The brown-out reset (BOR) always remains active in Standby mode.
The state of each I/O during standby mode can be selected by software: I/O with
internal pull-up, internal pull-down or floating.
After entering Standby mode, SRAM1, SRAM2b and register contents are lost except
for registers in the Backup domain and Standby circuitry. Optionally, SRAM2a can be
retained in Standby mode, supplied by the low-power regulator (Standby with 32 KB
SRAM2a retention mode).
The device exits Standby mode when an external reset (NRST pin), an IWDG reset,
WKUP pin event (configurable rising or falling edge), or an RTC event occurs (alarm,
periodic wake-up, timestamp, tamper) or a failure is detected on LSE (CSS on LSE, or
from the RF system wake-up).
The system clock after wake-up is 16 MHz, derived from the HSI16. In this mode the
RF can be used.
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STM32WB50CG STM32WB30CE
•
Functional overview
Shutdown
This mode achieves the lowest power consumption. The internal regulator is switched
off so that the VCORE domain is powered off.
The RTC can remain active (Shutdown mode with RTC, Shutdown mode without RTC).
The BOR is not available in Shutdown mode. No power voltage monitoring is possible
in this mode, therefore the switch to Backup domain is not supported.
SRAM1, SRAM2a, SRAM2b and register contents are lost except for registers in the
Backup domain.
The device exits Shutdown mode when an external reset (NRST pin), a WKUP pin
event (configurable rising or falling edge), or an RTC event occurs (alarm, periodic
wake-up, timestamp, tamper).
The system clock after wake-up is 4 MHz, derived from the MSI.
In this mode the RF is no longer operational.
When the RF subsystem is active, it changes the power state according to its needs (Run,
Stop, Standby). This operation is transparent for the CPU1 host application and managed by
a dedicated HW state machine. At any given time the effective power state reached is the
higher one needed by both the CPU1 and RF sub-system.
Table 5 summarizes the peripheral features over all available modes. Wake-up capability is
detailed in gray cells.
Table 5. Features over all modes(1)
Wake-up capability
-
Wake-up capability
-
CPU1
Y
-
Y
-
-
-
-
-
-
-
-
-
-
CPU2
Y
-
Y
-
-
-
-
-
-
-
-
-
-
Radio system
(BLE, 802.15.4)
Y
Y
-
-
Y
Y
Y
Y
Y(2)
Y(2)
Y(3)
Y
O(4) O(4)
R
-
R
-
R
-
R
-
R
Y
Y(5)
Y
Y(5)
R
-
R
-
-
-
-
-
-
SRAM2a
Y
(5)
Y
Y
Y(5)
R
-
R
-
R(6)
-
-
-
-
SRAM2b
Y
Y(5)
Y
Y(5)
R
-
R
-
-
-
-
-
-
Backup registers
Y
Y
Y
Y
R
-
R
-
R
-
R
-
R
Brown-out reset (BOR)
Y
Y
Y
Y
Y
Y
Y
Y
Y
Y
-
-
-
Programmable voltage
detector (PVD)
O
O
O
O
O
O
O
O
-
-
-
-
-
DMA1
O
O
O
O
-
-
-
-
-
-
-
-
-
High speed internal
(HSI16)
O
O
O
O
O(7)
-
O(7)
-
-
-
-
-
-
Flash memory
SRAM1
-
DS13047 Rev 7
VBAT
Wake-up capability
-
Peripheral
Wake-up capability
Low-power sleep
Shutdown
Low-power run
Standby
Sleep
Stop 2
Run
Stop0/Stop1
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Functional overview
STM32WB50CG STM32WB30CE
Table 5. Features over all modes(1) (continued)
Wake-up capability
-
Wake-up capability
-
O
O
-
-
-
-
-
-
-
-
-
-
-
O
O
O
O
-
-
-
-
-
-
-
-
-
O
O
O
O
O
-
O
-
O
-
-
-
-
O
O
O
O
O
-
O
-
O
-
O
-
O
48
O
48
O
-
-
-
-
-
-
-
-
-
344
O
-
-
-
-
-
-
-
-
-
-
-
Clock security system (CSS)
O
O
O
O
O
O(10)
O
O(10)
-
-
-
-
-
Clock security system on
LSE
O
O
O
O
O
O
O
O
O
O
-
-
-
RTC / Auto wake-up
O
O
O
O
O
O
O
O
O
O
O
O
O
Number of RTC tamper pins
1
1
1
1
1
O
1
O
1
O
1
O
1
O
O
(11)
O(11)
-
-
-
-
-
-
-
O(12)
-
-
-
-
-
-
-
Oscillator HSI48
High speed external (HSE)
(8)
Low speed internal
(LSI1 or LSI2)
Low speed external (LSE)
Multi speed internal
(MSI)(9)
PLL VCO maximum
frequency
USART1
O
O
O
-
VBAT
Wake-up capability
-
Peripheral
Wake-up capability
Low-power sleep
Shutdown
Low-power run
Standby
Sleep
Stop 2
Run
Stop0/Stop1
I2C1
O
O
O
O
O(12)
SPI1
O
O
O
O
-
-
-
-
-
-
-
-
-
ADC1
O
O
O
O
-
-
-
-
-
-
-
-
-
Temperature sensor
O
O
O
O
-
-
-
-
-
-
-
-
-
Timers TIMx
(x=1, 2, 16, 17)
O
O
O
O
-
-
-
-
-
-
-
-
-
Low-power Timer 1 (LPTIM1)
O
O
O
O
O
O
O
O
-
-
-
-
-
Low-power Timer 2 (LPTIM2)
O
O
O
O
O
O
-
-
-
-
-
-
-
Independent watchdog
(IWDG)
O
O
O
O
O
O
O
O
O
O
-
-
-
Window watchdog (WWDG)
O
O
O
O
-
-
-
-
-
-
-
-
-
SysTick timer
O
O
O
O
-
-
-
-
-
-
-
-
-
True random number
generator (RNG)
O
O
-
-
-
-
-
-
-
-
-
-
-
AES2 hardware accelerator
O
O
O
O
-
-
-
-
-
-
-
-
-
CRC calculation unit
O
O
O
O
-
-
-
-
-
-
-
-
-
IPCC
O
-
O
-
-
-
-
-
-
-
-
-
-
HSEM
O
-
O
-
-
-
-
-
-
-
-
-
-
28/121
DS13047 Rev 7
STM32WB50CG STM32WB30CE
Functional overview
Table 5. Features over all modes(1) (continued)
Wake-up capability
-
Wake-up capability
-
PKA
O
O
O
O
-
-
-
-
-
-
-
-
-
GPIOs
O
O
O
O
O
O
O
O
(13)
5
pins
(14)
5
pins
-
-
VBAT
Wake-up capability
-
Peripheral
Wake-up capability
Low-power sleep
Shutdown
Low-power run
Standby
Sleep
Stop 2
Run
Stop0/Stop1
1. Legend: Y = Yes (enabled), O = Optional (disabled by default, can be enabled by software), R = Data retained,
- = Not available.
2. Standby with SRAM2a Retention mode only.
3. Flash memory programming only possible in Run, not in Low Power Run.
4. The Flash memory can be configured in Power-down mode. By default, it is not in Power-down Run.
5. The SRAM clock can be gated on or off.
6. SRAM2a content is preserved when the bit RRS is set in PWR_CR3 register.
7. Some peripherals with wake-up from Stop capability can request HSI16 to be enabled. In this case, HSI16 is woken up by
the peripheral, and only feeds the peripheral which requested it. HSI16 is automatically put off when the peripheral does not
need it anymore.
8. The HSE can be used by the RF subsystem according with the need to perform RF operation (Tx or Rx).
9. MSI maximum frequency.
10. In case RF will be used and HSE will fail.
11. UART reception is functional in Stop mode, and generates a wake-up interrupt on Start, address match or received frame
event.
12. I2C address detection is functional in Stop mode, and generates a wake-up interrupt in case of address match.
13. I/Os can be configured with internal pull-up, pull-down or floating in Standby mode.
14. I/Os can be configured with internal pull-up, pull-down or floating in Shutdown mode but the configuration is lost when
exiting the Shutdown mode.
DS13047 Rev 7
29/121
45
DS13047 Rev 7
Regulator
CPU1
Flash
SRAM
Clocks
DMA and peripherals
Wake-up source
Consumption(1)
Wake-up time
Run
MR
Yes
ON(2)
ON
Any
All
N/A
107 µA/MHz
N/A
LPRun
LPR
Yes
ON(2)
ON
Any
except
PLL
All except RF, RNG
N/A
103 µA/MHz
15.33 µs
Sleep
MR
No
ON(2)
ON(3)
Any
All
Any interrupt
or event
41 µA/MHz
9 cycles
LPSleep
LPR
No
ON(2)
ON(3)
Any
except
PLL
All except RF, RNG
Any interrupt
or event
45 µA/MHz
9 cycles
LSE,
LSI,
HSE(4),
HSI16(5)
RF, BOR, PVD
RTC, IWDG
USART1(6)
I2C1(7)
LPTIMx (x=1, 2)
All other peripherals are frozen.
Reset pin, all I/Os,
RF, BOR, PVD
RTC, IWDG
USART1
I2C1
LPTIMx (x=1, 2)
105 µA
1.7 µs
ON
LSE,
LSI,
HSE(4),
HSI16(5)
RF, BOR, PVD
RTC, IWDG
USART1(6)
I2C1(7)
LPTIMx (x=1, 2)
All other peripherals are frozen.
Reset pin, all I/Os
RF, BOR, PVD
RTC, IWDG
USART1
I2C1
LPTIMx (x=1, 2)
9.25 µA w/o RTC
9.45 µA w RTC
4.7 µs
ON
LSE,
LSI
RF, BOR, PVD
RTC, IWDG
LPTIM1
All other peripherals are frozen.
Reset pin, all I/Os
RF, BOR, PVD
RTC, IWDG
LPTIM1
1.85 µA w/o RTC
2.25 µA w RTC
5.71 µs
Stop 0
Stop 1
Stop 2
MR
LPR
LPR
No
No
No
OFF
OFF
OFF
ON
STM32WB50CG STM32WB30CE
Mode
Functional overview
30/121
Table 6. STM32WB50CG and STM32WB30CE modes overview
Mode
Regulator
CPU1
Flash
SRAM2a
ON(8)
LPR
Standby
No
OFF
OFF
Shutdown
OFF
SRAM
OFF
No
OFF
OFF
Clocks
DMA and peripherals
Wake-up source
LSE,
LSI
RF, BOR, RTC, IWDG
All other peripherals are
powered off.
I/O configuration can be floating,
pull-up or pull-down
RF, Reset pin
2 I/Os (WKUPx)(9)
BOR, RTC, IWDG
LSE
RTC
All other peripherals are
powered off.
I/O configuration can be floating,
pull-up or pull-down(10)
2 I/Os (WKUPx)(9),
RTC
Consumption(1)
Wake-up time
0.32 µA w/o RTC
0.60 µA w RTC
0.11 µA w/o RTC
0.39 µA w RTC
0.028 µA w/o RTC
0.315 µA w/ RTC
51 µs
-
STM32WB50CG STM32WB30CE
Table 6. STM32WB50CG and STM32WB30CE modes overview (continued)
1. Typical current at VDD = 2.4 V, 25 °C. for STOPx, SHUTDOWN and Standby, else VDD = 3.3 V, 25 °C.
2. The Flash memory controller can be placed in power-down mode if the RF subsystem is not in use and all the program is run from the SRAM.
DS13047 Rev 7
3. The SRAM1 and SRAM2 clocks can be gated off independently.
4. HSE (32 MHz) automatically used when RF activity is needed by the RF subsystem.
5. HSI16 (16 MHz) automatically used by some peripherals.
6. U(S)ART reception is functional in Stop mode, and generates a wake-up interrupt on Start, Address match or Received frame event.
7. I2C address detection is functional in Stop mode, and generates a wake-up interrupt in case of address match.
8. SRAM1 and SRAM2b are OFF.
9. The I/Os with wake-up from Standby/Shutdown capability are: PA0, PA2.
10. I/Os can be configured with internal pull-up, pull-down or floating but the configuration is lost immediately when exiting the Shutdown mode.
Functional overview
31/121
Functional overview
3.7.5
STM32WB50CG STM32WB30CE
Reset mode
To improve the consumption under reset, the I/Os state under and after reset is “analog
state” (the I/O Schmitt trigger is disabled). In addition, the internal reset pull-up is
deactivated when the reset source is internal.
3.8
VBAT operation
The VBAT pin allows to power the device VBAT domain (RTC, LSE and Backup registers)
from an external battery, an external supercapacitor, or from VDD when no external battery
nor an external supercapacitor are present. One anti-tamper detection pin is available in
VBAT mode.
VBAT operation is automatically activated when VDD is not present.
An internal VBAT battery charging circuit is embedded and can be activated when VDD is
present.
Note:
When the microcontroller is supplied only from VBAT, external interrupts and RTC
alarm/events do not exit it from VBAT operation.
3.9
Interconnect matrix
Several peripherals have direct connections between them. This allows autonomous
communication between peripherals, saving CPU1 resources and, consequently, reducing
power supply consumption. In addition, these hardware connections result in fast and
predictable latency.
Depending on peripherals, these interconnections can operate in Run, Sleep, Low-power
run and Sleep, Stop 0, Stop 1 and Stop 2 modes.
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Stop 2
All clock sources
(internal and external)
Stop 0 / Stop 1
RTC
Low-power
ADC
Low-power run
TIMx
Sleep
Source
Run
Table 7. STM32WB50CG and STM32WB30CE CPU1 peripherals interconnect matrix
TIMx
Timers synchronization or chaining
Y
Y
Y
Y
-
-
ADC1
Conversion triggers
Y
Y
Y
Y
-
-
DMA
Memory to memory transfer trigger
Y
Y
Y
Y
-
-
TIM1
Timer triggered by analog watchdog
Y
Y
Y
Y
-
-
TIM16
Timer input channel from RTC events
Y
Y
Y
Y
-
-
LPTIMERx
Low-power timer triggered by RTC
alarms or tamper
Y
Y
Y
Y
Y
Y(1)
TIM2
TIM16, 17
Clock source used as input channel
for RC measurement and trimming
Y
Y
Y
Y
-
-
Destination
Action
DS13047 Rev 7
STM32WB50CG STM32WB30CE
Functional overview
GPIO
LPTIMERx
ADC1
Stop 2
TIMx
Stop 0 / Stop 1
TIM1
TIM16,17
Low-power
CSS
CPU (hard fault)
SRAM (parity error)
Flash memory (ECC error)
PVD
Low-power run
Destination
Sleep
Source
Run
Table 7. STM32WB50CG and STM32WB30CE CPU1 peripherals interconnect matrix (continued)
Timer break
Y
Y
Y
Y
-
-
External trigger
Y
Y
Y
Y
-
(1)
Action
External trigger
Y
Y
Y
Y
Y
Conversion external trigger
Y
Y
Y
Y
-
Y
-
1. LPTIM1 only.
DS13047 Rev 7
33/121
45
Functional overview
3.10
STM32WB50CG STM32WB30CE
Clocks and startup
The STM32WB50CG and STM32WB30CE devices integrate several clock sources:
•
LSE: 32.768 kHz external oscillator, for accurate RTC and calibration with other
embedded RC oscillators
•
LSI1: 32 kHz on-chip low-consumption RC oscillator
•
LSI2: almost 32 kHz, on-chip high-stability RC oscillator, can be used by the RF
subsystem instead of LSE
•
HSE: high quality 32 MHz external oscillator with trimming, needed by the RF
subsystem
•
HSI16: 16 MHz high accuracy on-chip RC oscillator
•
MSI: 100 kHz to 48 MHz multiple speed on-chip low power oscillator, can be trimmed
using the LSE signal
•
HSI48: 48 MHz on-chip RC oscillator
The clock controller (see Figure 7) distributes the clocks coming from the different
oscillators to the core and the peripherals including the RF subsystem. It also manages
clock gating for low power modes and ensures clock robustness. It features:
•
Clock prescaler: to get the best trade-off between speed and current consumption,
the clock frequency to the CPU and peripherals can be adjusted by a programmable
prescaler
•
Safe clock switching: clock sources can be changed safely on the fly in run mode
through a configuration register.
•
Clock management: to reduce power consumption, the clock controller can stop the
clock to the core, individual peripherals or memory.
•
System clock source: four different clock sources can be used to drive the master
clock SYSCLK:
•
34/121
–
16 MHz high-speed internal RC oscillator (HSI16), trimmable by software, that can
supply a PLL
–
Multispeed internal RC oscillator (MSI), trimmable by software, able to generate
12 frequencies from 100 kHz to 48 MHz. When a 32.768 kHz clock source is
available in the system (LSE), the MSI frequency can be automatically trimmed by
hardware to reach better than ±0.25% accuracy. The MSI can supply a PLL.
–
System PLL that can be fed by HSE, HSI16 or MSI, with a maximum frequency of
64 MHz.
Auxiliary clock source: two ultralow-power clock sources that can be used to drive
the real-time clock:
–
32.768 kHz low-speed external crystal (LSE), supporting four drive capability
modes. The LSE can also be configured in bypass mode for an external clock.
–
32 kHz low-speed internal RC (LSI), also used to drive the independent watchdog.
The LSI clock accuracy is ±5%. The LSI source can be either the LSI1 or the LSI2
on-chip oscillator.
•
Peripheral clock sources: Several peripherals (RNG, USARTs, I2C, LPTimers, ADC)
have their own independent clock whatever the system clock. A PLL having three
independent outputs for the highest flexibility can generate independent clocks for the
ADC and the RNG.
•
Startup clock: after reset, the microcontroller restarts by default with an internal 4 MHz
clock (MSI). The prescaler ratio and clock source can be changed by the application
DS13047 Rev 7
STM32WB50CG STM32WB30CE
Functional overview
program as soon as the code execution starts.
•
Clock security system (CSS): this feature can be enabled by software. If an HSE
clock failure occurs, the master clock is automatically switched to HSI16 and a software
interrupt is generated if enabled. LSE failure can also be detected and an interrupt
generated.
•
Clock-out capability:
–
MCO (microcontroller clock output): it outputs one of the internal clocks for
external use by the application. Low frequency clocks (LSIx, LSE) are available
down to Stop 1 low power state.
–
LSCO (low-speed clock output): it outputs LSI or LSE in all low-power modes
down to Standby.
Several prescalers allow the user to configure the AHB frequencies, the high-speed APB
(APB2) and the low-speed APB (APB1) domains. The maximum frequency of the AHB and
the APB domains is 64 MHz.
DS13047 Rev 7
35/121
45
Functional overview
STM32WB50CG STM32WB30CE
Figure 7. Clock tree
LSI1 RC 32 kHz
to IWDG
LSI
LSI2 RC 32 kHz
LSI
LSCO
to RTC
LSE
OSC32_OUT
LSE OSC
32.768 kHz
to BLE wakeup
LSE
OSC32_IN
to 802.15.4 wakeup
LSE CSS
LSI1
/32
CPU1
HPRE
/1,2,...,512
LSI2
/32
LSE
to CPU1 FCLK
HSE
MCO
to CPU1, AHB1, AHB2, and SRAM1
HCLK1
to CPU1 system timer
/8
SYSCLK
/1 - 16
PLLRCLK
SYS clock
source control
HSI16
APB1
PPRE1
/1,2,4,8,16
PCLK1
APB2
PPRE2
/1,2,4,8,16
PCLK2
MSI
PLLRCLK
RC48
OSC_OUT
OSC_IN
HSI16
HSE OSC
32 MHz
SYSCLK
HSE HSEPRE/1,2
CPU2
C2HPRE
1,2,...,512
MSI
HSE CSS
to APB1
to APB1 TIMx
to APB2
to APB2 TIMx
to CPU2
to CPU2 FCLK
/8
HSI48 RC
48 MHz
x1 or
x2
HCLK2
HSI16 RC
16 MHz
MSI RC
100 kHz - 48 MHz
x1 or
x2
AHB4
SHDHPRE
/1,2,...,512
to CPU2 system timer
to AHB4, Flash memory, SRAM2
HCLK4
to APB3
HSI16
MSI
HSE
HSI16
/M
to AHB5
HCLK5
/2
to RF
PLL
xN
MSI
/P
/Q
PLLPCLK
HSI48
/3
PLLQCLK
to RNG
LSI
/R
PLLRCLK
PCLKn
LSE
SYSCLK
to USART1
HSI16
LSE
PCLKn
PCLKn
to ADC
SYSCLK
SYSCLK
HSI16
HSI16
to I2Cx
to LPTIMx
LSI
LSE
MSv63019V5
3.11
General-purpose inputs/outputs (GPIOs)
Each of the GPIO pins can be configured by software as output (push-pull or open-drain), as
input (with or without pull-up or pull-down) or as peripheral alternate function. Most of the
GPIO pins are shared with digital or analog alternate functions. Fast I/O toggling can be
achieved thanks to their mapping on the AHB2 bus.
The I/Os alternate function configuration can be locked, if needed, following a specific
sequence in order to avoid spurious writing to the I/Os registers.
36/121
DS13047 Rev 7
STM32WB50CG STM32WB30CE
3.12
Functional overview
Direct memory access controller (DMA)
The device embeds one DMA. Refer to Table 8 for the features implementation.
Direct memory access (DMA) is used to provide high-speed data transfer between
peripherals and memory as well as between memories. Data can be quickly moved by DMA
without any CPU action. This keeps CPU resources free for other operations.
The DMA controller has seven channels in total, a full cross matrix allows any peripheral to
be mapped on any of the available DMA channels. The DMA has an arbiter for handling the
priority between DMA requests.
The DMA supports:
•
seven independently configurable channels (requests)
•
A full cross matrix between peripherals and all the DMA channels exist. There is also a
HW trigger possibility through the DMAMUX.
•
Priorities between requests from DMA channels are software programmable (four
levels consisting in very high, high, medium and low) or hardware in case of equality
(request 1 has priority over request 2, etc.).
•
Independent source and destination transfer size (byte, half word, word), emulating
packing and unpacking. Source/destination addresses must be aligned on the data
size.
•
Support for circular buffer management.
•
Three event flags (DMA half transfer, DMA transfer complete and DMA transfer error)
logically OR-ed together in a single interrupt request for each channel.
•
Memory-to-memory transfer.
•
Peripheral-to-memory and memory-to-peripheral, and peripheral-to-peripheral
transfers.
•
Access to flash memory, SRAM, APB and AHB peripherals as source and destination.
•
Programmable number of data to be transferred: up to 65536.
Table 8. DMA implementation
DMA features
DMA1
Number of regular channels
7
A DMAMUX block makes it possible to route any peripheral source to any DMA channel.
3.13
Interrupts and events
3.13.1
Nested vectored interrupt controller (NVIC)
The devices embed a nested vectored interrupt controller able to manage 16 priority levels,
and handle up to 63 maskable interrupt channels plus the 16 interrupt lines of the
Cortex®-M4 with FPU.
DS13047 Rev 7
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45
Functional overview
STM32WB50CG STM32WB30CE
The NVIC benefits are the following:
•
Closely coupled NVIC gives low latency interrupt processing
•
Interrupt entry vector table address passed directly to the core
•
Allows early processing of interrupts
•
Processing of late arriving higher priority interrupts
•
Support for tail chaining
•
Processor state automatically saved
•
Interrupt entry restored on interrupt exit with no instruction overhead
The NVIC hardware block provides flexible interrupt management features with minimal
interrupt latency.
3.13.2
Extended interrupts and events controller (EXTI)
The EXTI manages wake-up through configurable and direct event inputs. It provides
wake-up requests to the Power control, and generates interrupt requests to the CPUx NVIC
and events to the CPUx event input.
Configurable events/interrupts come from peripherals able to generate a pulse, and make it
possible to select the Event/Interrupt trigger edge and/or a SW trigger.
Direct events/interrupts are coming from peripherals having their own clearing mechanism.
3.14
Analog to digital converter (ADC)
The device embeds a successive approximation analog-to-digital converter with the
following features:
•
12-bit native resolution, with built-in calibration
•
Up to 16-bit resolution with 256 oversampling ratio
•
2.13 Msps maximum conversion rate with full resolution
Down to 78 ns sampling time
–
Increased conversion rate for lower resolution (up to 3.55 Msps for 6-bit
resolution)
•
Up to ten external channels and three internal channels: internal reference voltages,
temperature sensor
•
Single-ended and differential mode inputs
•
Low-power design
•
38/121
–
–
Capable of low-current operation at low conversion rate (consumption decreases
linearly with speed)
–
Dual clock domain architecture: ADC speed independent from CPU frequency
Highly versatile digital interface
–
Single-shot or continuous/discontinuous sequencer-based scan mode: two groups
of analog signals conversions can be programmed to differentiate background and
high-priority real-time conversions
–
The ADC supports multiple trigger inputs for synchronization with on-chip timers
and external signals
–
Results stored into three data register or in SRAM with DMA controller support
DS13047 Rev 7
STM32WB50CG STM32WB30CE
3.14.1
Functional overview
–
Data pre-processing: left/right alignment and per channel offset compensation
–
Built-in oversampling unit for enhanced SNR
–
Channel-wise programmable sampling time
–
Three analog watchdog for automatic voltage monitoring, generating interrupts
and trigger for selected timers
–
Hardware assistant to prepare the context of the injected channels to allow fast
context switching
Temperature sensor
The temperature sensor (TS) generates a voltage VTS that varies linearly with temperature.
The temperature sensor is internally connected to the ADC1_IN17 input channel, which is
used to convert the sensor output voltage into a digital value.
To improve the accuracy of the temperature sensor measurement, each device is
individually factory-calibrated by ST. The temperature sensor factory calibration data are
stored in the system memory area, accessible in read-only mode.
Table 9. Temperature sensor calibration values
3.14.2
Calibration value name
Description
Memory address
TS_CAL1
TS ADC raw data acquired at a
temperature of 30 °C (± 5 °C),
VDDA = VREF+ = 3.0 V (± 10 mV)
0x1FFF 75A8 - 0x1FFF 75A9
TS_CAL2
TS ADC raw data acquired at a
temperature of 130 °C (± 5 °C),
VDDA = VREF+ = 3.0 V (± 10 mV)
0x1FFF 75CA - 0x1FFF 75CB
Internal voltage reference (VREFINT)
The internal voltage reference (VREFINT) provides a stable (bandgap) voltage output for
the ADC. VREFINT is internally connected to the ADC1_IN0 input channel. The precise
voltage of VREFINT is individually measured for each part by ST during production test and
stored in the system memory area. It is accessible in read-only mode.
Table 10. Internal voltage reference calibration values
Calibration value name
VREFINT
3.15
Description
Raw data acquired at a
temperature of 30 °C (± 5 °C),
VDDA = 3.6 V (± 10 mV)
Memory address
0x1FFF 75AA - 0x1FFF 75AB
True random number generator (RNG)
The devices embed a true RNG that delivers 32-bit random numbers generated by an
integrated analog circuit.
DS13047 Rev 7
39/121
45
Functional overview
3.16
STM32WB50CG STM32WB30CE
Timers and watchdogs
The STM32WB50CG and STM32WB30CE include one advanced 16-bit timer, one generalpurpose 32-bit timer, two 16-bit basic timers, two low-power timers, two watchdog timers
and a SysTick timer. Table 11 compares the features of the advanced control, general
purpose and basic timers.
Table 11. Timer features
Capture/
compare
channels
Complementary
outputs
Up, down,
Up/down
4
3
32-bits
Up, down,
Up/down
4
No
TIM16
16-bits
Up
2
1
General
purpose
TIM17
16-bits
Up
2
1
Low power
LPTIM1
LPTIM2
16-bits
Up
1
1
Timer
type
Timer
Counter
resolution
Counter
type
Advanced
control
TIM1
16-bits
General
purpose
TIM2
General
purpose
3.16.1
Prescaler
factor
Any integer
between 1
and 65536
DMA
request
generation
Yes
Advanced-control timer (TIM1)
The advanced-control timer can be seen as a three-phase PWM multiplexed on six
channels. They have complementary PWM outputs with programmable inserted
dead-times. They can also be seen as complete general-purpose timers. The four
independent channels can be used for:
•
Input capture
•
Output compare
•
PWM generation (edge or center-aligned modes) with full modulation capability (0 to
100%)
•
One-pulse mode output
In debug mode, the advanced-control timer counter can be frozen and the PWM outputs
disabled to turn off any power switches driven by these outputs.
Many features are shared with those of the general-purpose TIMx timers (described in
Section 3.16.2) using the same architecture, so the advanced-control timers can work
together with the TIMx timers via the Timer Link feature for synchronization or event
chaining.
3.16.2
General-purpose timers (TIM2, TIM16, TIM17)
There are up to three synchronizable general-purpose timers embedded in the
STM32WB50CG and STM32WB30CE (see Table 11 for differences). Each general-purpose
timer can be used to generate PWM outputs, or act as a simple time base.
•
TIM2
–
40/121
Full-featured general-purpose timer
DS13047 Rev 7
STM32WB50CG STM32WB30CE
•
3.16.3
Functional overview
–
Features four independent channels for input capture/output compare, PWM or
one-pulse mode output. Can work together, or with the other general-purpose
timers via the Timer Link feature for synchronization or event chaining.
–
The counter can be frozen in debug mode.
–
Independent DMA request generation, support of quadrature encoders.
TIM16 and TIM17
–
General-purpose timers with mid-range features:
–
16-bit auto-reload upcounters and 16-bit prescalers.
–
1 channel and 1 complementary channel.
–
All channels can be used for input capture/output compare, PWM or one-pulse
mode output.
–
The timers can work together via the Timer Link feature for synchronization or
event chaining. The timers have independent DMA request generation.
–
The counters can be frozen in debug mode.
Low-power timer (LPTIM1 and LPTIM2)
The devices embed two low-power timers, having an independent clock running in Stop
mode if they are clocked by LSE, LSIx or by an external clock. They are able to wake-up the
system from Stop mode.
LPTIM1 is active in Stop 0, Stop 1 and Stop 2 modes.
LPTIM2 is active in Stop 0 and Stop 1 modes.
The low-power timers support the following features:
3.16.4
•
16-bit up counter with 16-bit autoreload register
•
16-bit compare register
•
Configurable output: pulse, PWM
•
Continuous/ one shot mode
•
Selectable software/hardware input trigger
•
Selectable clock source
–
Internal clock sources: LSE, either LSI1 or LSI2, HSI16 or APB clock
–
External clock source over LPTIM input (working even with no internal clock
source running, used by pulse counter application)
•
Programmable digital glitch filter
•
Encoder mode (LPTIM1 only)
Independent watchdog (IWDG)
The independent watchdog is based on a 12-bit downcounter and an 8-bit prescaler. It is
clocked from an independent 32 kHz internal RC (LSI) and as it operates independently
from the main clock, it can operate in Stop and Standby modes. It can be used either as a
watchdog to reset the device when a problem occurs, or as a free running timer for
application timeout management. It is hardware or software configurable through the option
bytes. The counter can be frozen in debug mode.
DS13047 Rev 7
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45
Functional overview
3.16.5
STM32WB50CG STM32WB30CE
System window watchdog (WWDG)
The window watchdog is based on a 7-bit downcounter that can be set as free running. It
can be used as a watchdog to reset the device when a problem occurs. It is clocked from
the main clock. It has an early warning interrupt capability and the counter can be frozen in
debug mode.
3.16.6
SysTick timer
This timer is dedicated to real-time operating systems, but could also be used as a standard
down counter. It features:
3.17
•
a 24-bit down counter
•
autoreload capability
•
a maskable system interrupt generation when the counter reaches 0
•
a programmable clock source.
Real-time clock (RTC) and backup registers
The RTC is an independent BCD timer/counter, supporting the following features:
•
Calendar with subsecond, seconds, minutes, hours (12 or 24 format), week day, date,
month, year, in BCD (binary-coded decimal) format.
•
Automatic correction for 28, 29 (leap year), 30, and 31 days of the month.
•
Two programmable alarms.
•
On-the-fly correction from 1 to 32767 RTC clock pulses. This can be used to
synchronize it with a master clock.
•
Reference clock detection: a more precise second source clock (50 or 60 Hz) can be
used to enhance the calendar precision.
•
Digital calibration circuit with 0.95 ppm resolution, to compensate for quartz crystal
inaccuracy.
•
One anti-tamper detection pin with programmable filter.
•
Timestamp feature, which can be used to save the calendar content. This function can
be triggered by an event on the timestamp pin, or by a tamper event, or by a switch to
VBAT mode.
•
17-bit auto-reload wake-up timer (WUT) for periodic events with programmable
resolution and period.
The RTC and the 20 backup registers are supplied through a switch that takes power either
from the VDD supply (when present) or from the VBAT pin.
The backup registers are 32-bit registers used to store 80 bytes of user application data
when VDD power is not present. They are not reset by a system or power reset, or when the
device wakes up from Standby or Shutdown mode.
The RTC clock sources can be:
42/121
•
a 32.768 kHz external crystal (LSE)
•
an external resonator or oscillator (LSE)
•
one of the internal low power RC oscillators (LSI1 or LSI2, with typical frequency of
32 kHz)
•
the high-speed external clock (HSE) divided by 32.
DS13047 Rev 7
STM32WB50CG STM32WB30CE
Functional overview
The RTC is functional in VBAT mode and in all low-power modes when it is clocked by the
LSE. When clocked by one of the LSIs, the RTC is not functional in VBAT mode, but is
functional in all low-power modes except Shutdown mode.
All RTC events (alarm, wake-up timer, timestamp or tamper) can generate an interrupt and
wake-up the device from the low-power modes.
3.18
Inter-integrated circuit interface (I2C)
The devices embed one I2C. Refer to Table 12 for the features implementation.
The I2C bus interface handles communications between the microcontroller and the serial
I2C bus. It controls all I2C bus-specific sequencing, protocol, arbitration and timing.
The I2C peripheral supports:
•
•
I2C-bus specification and user manual rev. 5 compatibility:
–
Slave and master modes, multimaster capability
–
Standard-mode (Sm), with a bitrate up to 100 kbit/s
–
Fast-mode (Fm), with a bitrate up to 400 kbit/s
–
Fast-mode Plus (Fm+), with a bitrate up to 1 Mbit/s and 20 mA output drive I/Os
–
7-bit and 10-bit addressing mode, multiple 7-bit slave addresses
–
Programmable setup and hold times
–
Optional clock stretching
System Management Bus (SMBus) specification rev 2.0 compatibility:
–
Hardware PEC (packet error checking) generation and verification with ACK
control
–
Address resolution protocol (ARP) support
–
SMBus alert
•
Power System Management Protocol (PMBus™) specification rev 1.1 compatibility
•
Independent clock: a choice of independent clock sources allowing the I2C
communication speed to be independent from the PCLK reprogramming. Refer to
Figure 7: Clock tree.
•
Wake-up from Stop mode on address match
•
Programmable analog and digital noise filters
•
1-byte buffer with DMA capability
Table 12. I2C implementation
I2C features(1)
I2C1
Standard-mode (up to 100 kbit/s)
X
Fast-mode (up to 400 kbit/s)
X
Fast-mode Plus with 20 mA output drive I/Os (up to 1 Mbit/s)
X
Programmable analog and digital noise filters
X
SMBus/PMBus hardware support
X
DS13047 Rev 7
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45
Functional overview
STM32WB50CG STM32WB30CE
Table 12. I2C implementation (continued)
I2C features(1)
I2C1
Independent clock
X
Wake-up from Stop 0 / Stop 1 mode on address match
X
Wake-up from Stop 2 mode on address match
-
1. X: supported.
3.19
Universal synchronous/asynchronous receiver transmitter
(USART)
The devices embed one universal synchronous receiver transmitter.
This interface provides asynchronous communication, IrDA SIR ENDEC support,
multiprocessor communication mode, single-wire half-duplex communication mode and has
LIN Master/Slave capability. It provides hardware management of the CTS and RTS signals,
and RS485 driver enable.
The USART is able to communicate at speeds of up to 4 Mbit/s, and also provides Smart
Card mode (ISO 7816 compliant) and SPI-like communication capability.
The USART supports synchronous operation (SPI mode), and can be used as an SPI
master.
The USART has a clock domain independent from the CPU clock, allowing it to wake up the
MCU from Stop mode using baudrates up to 200 kbaud. The wake up events from Stop
mode are programmable and can be:
•
the start bit detection
•
any received data frame
•
a specific programmed data frame.
The USART interface can be served by the DMA controller.
3.20
Serial peripheral interface (SPI1)
The SPI interface enables communication up to 32 Mbit/s in master and up to 24 Mbit/s in
slave modes, in half-duplex, full-duplex and simplex modes. The 3-bit prescaler gives 8
master mode frequencies and the frame size is configurable from 4 bits to 16 bits. The SPI
interface supports NSS pulse mode, TI mode and Hardware CRC calculation.
The SPI interface can be served by the DMA controller.
3.21
Development support
3.21.1
Serial wire JTAG debug port (SWJ-DP)
The embedded Arm® SWJ-DP interface is a combined JTAG and serial wire debug port that
enables either a serial wire debug, or a JTAG probe to be connected to the target.
44/121
DS13047 Rev 7
STM32WB50CG STM32WB30CE
Functional overview
Debug is performed using only two pins instead of the five required by the JTAG (JTAG pins
can then be reused as GPIOs with alternate function): the JTAG TMS and TCK pins are
shared with SWDIO and SWCLK, respectively, and a specific sequence on the TMS pin is
used to switch between JTAG-DP and SW-DP.
DS13047 Rev 7
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45
Pinouts and pin description
4
STM32WB50CG STM32WB30CE
Pinouts and pin description
VDD
PB7
PB6
PB5
PB4
PB3
PA15
PA14
VDD
PA13
PA12
PA11
48
47
46
45
44
43
42
41
40
39
38
37
Figure 8. STM32WB50CG and STM32WB30CE UFQFPN48 pinout(1)(2)
VBAT
1
36
PA10
PC14-OSC32_IN
2
35
VDD
PC15-OSC32_OUT
3
34
VDD
PH3-BOOT0
4
33
VDD
PB8
5
32
VSS
PB9
6
31
VDD
NRST
7
30
PE4
VDDA
8
29
PB1
PA0
9
28
PB0
PA1
10
27
AT1
PA2
11
26
AT0
PA3
12
25
OSC_IN
13
14
15
16
17
18
19
20
21
22
23
24
PA4
PA5
PA6
PA7
PA8
PA9
PB2
VDD
RF1
VSSRF
VDDRF
OSC_OUT
UFQFPN48
MSv63017V2
1. The above figure shows the package top view.
2. The exposed pad must be connected to ground plane.
Table 13. Legend/abbreviations used in the pinout table
Name
Pin name
Abbreviation
Unless otherwise specified in brackets below the pin name, the pin function during and after
reset is the same as the actual pin name
S
Supply pin
I
Input only pin
Pin type
I/O structure
Definition
I/O
Input / output pin
FT
5 V tolerant I/O
TT
3.6 V tolerant I/O
RF
RF I/O
RST
Bidirectional reset pin with weak pull-up resistor
Option for TT or FT I/Os
Notes
_f
(1)
I/O, Fm+ capable
_a
(2)
I/O, with Analog switch function supplied by VDDA
Unless otherwise specified by a note, all I/Os are set as analog inputs during and after reset.
Alternate
Functions selected through GPIOx_AFR registers
functions
Pin
functions Additional
Functions directly selected/enabled through peripheral registers
functions
1. The related I/O structures in Table 14 are: FT_f, FT_fa.
46/121
DS13047 Rev 7
STM32WB50CG STM32WB30CE
Pinouts and pin description
2. The related I/O structures in Table 14 are: FT_a, FT_fa, TT_a.
Pin type
I/O structures
Notes
Table 14. STM32WB50CG and STM32WB30CE pin and ball definitions
Alternate functions
S
-
-
-
FT
(1)(2)
CM4_EVENTOUT
OSC32_IN
CM4_EVENTOUT
OSC32_OUT
Number
Pin (UFQFPN48)
Name (function
after reset)
1
VBAT
2
PC14-OSC32_IN
I/O
Additional functions
-
3
PC15-OSC32_OUT
I/O
FT
(1)(2)
4
PH3-BOOT0
I/O
FT
-
CM4_EVENTOUT, LSCO(3)
-
5
PB8
I/O
FT_f
-
TIM1_CH2N, I2C1_SCL, TIM16_CH1,
CM4_EVENTOUT
-
6
PB9
I/O FT_fa
-
TIM1_CH3N, I2C1_SDA, IR_OUT,
TIM17_CH1, CM4_EVENTOUT
-
7
NRST
I/O
RST
-
-
-
-
-
8
VDDA
S
-
(4)
9
PA0
I/O
FT_a
-
TIM2_CH1, TIM2_ETR, CM4_EVENTOUT
ADC1_IN5,
RTC_TAMP2/WKUP1
10
PA1
I/O
FT_a
-
TIM2_CH2, I2C1_SMBA, SPI1_SCK,
CM4_EVENTOUT
ADC1_IN6
11
PA2
I/O
FT_a
-
LSCO(3), TIM2_CH3, CM4_EVENTOUT
ADC1_IN7, WKUP4
12
PA3
I/O
FT_a
-
TIM2_CH4, CM4_EVENTOUT
ADC1_IN8
13
PA4
I/O
FT_a
-
SPI1_NSS, LPTIM2_OUT,
CM4_EVENTOUT
ADC1_IN9
14
PA5
I/O
FT_a
-
TIM2_CH1, TIM2_ETR, SPI1_SCK,
LPTIM2_ETR, CM4_EVENTOUT
ADC1_IN10
15
PA6
I/O
FT_a
-
TIM1_BKIN, SPI1_MISO, TIM16_CH1,
CM4_EVENTOUT
ADC1_IN11
16
PA7
I/O FT_fa
-
TIM1_CH1N, SPI1_MOSI, TIM17_CH1,
CM4_EVENTOUT
ADC1_IN12
17
PA8
I/O
FT_a
-
MCO, TIM1_CH1, USART1_CK,
LPTIM2_OUT, CM4_EVENTOUT
ADC1_IN15
18
PA9
I/O FT_fa
-
TIM1_CH2, I2C1_SCL, USART1_TX,
CM4_EVENTOUT
ADC1_IN16
19
PB2
I/O
FT_a
-
RTC_OUT, LPTIM1_OUT, SPI1_NSS,
CM4_EVENTOUT
-
20
VDD
S
-
-
-
-
-
-
21
RF1
I/O
RF
(5)
22
VSSRF
S
-
-
-
-
23
VDDRF
S
-
-
-
-
DS13047 Rev 7
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52
Pinouts and pin description
STM32WB50CG STM32WB30CE
Pin type
I/O structures
Notes
Table 14. STM32WB50CG and STM32WB30CE pin and ball definitions (continued)
Alternate functions
O
RF
(6)
-
-
RF
(6)
-
-
-
-
-
-
Number
Pin (UFQFPN48)
Name (function
after reset)
24
OSC_OUT
25
OSC_IN
I
Additional functions
26
AT0
O
RF
(7)
27
AT1
O
RF
(7)
28
PB0
I/O
TT
(8)
CM4_EVENTOUT,
RF_TX_MOD_EXT_PA
-
29
PB1
I/O
TT
(8)
LPTIM2_IN1, CM4_EVENTOUT
-
30
PE4
I/O
FT
-
CM4_EVENTOUT
-
31
VDD
S
-
-
-
-
32
VSS
S
-
-
-
-
33
VDD
S
-
-
-
-
34
VDD
S
-
-
-
-
35
VDD
S
-
-
-
-
36
PA10
I/O
FT_f
-
TIM1_CH3, I2C1_SDA, USART1_RX,
TIM17_BKIN, CM4_EVENTOUT
-
37
PA11
I/O
FT
-
TIM1_CH4, TIM1_BKIN2, SPI1_MISO,
USART1_CTS, CM4_EVENTOUT
-
38
PA12
I/O
FT
-
TIM1_ETR, SPI1_MOSI, USART1_RTS,
CM4_EVENTOUT
-
39 PA13(JTMS_SWDIO) I/O
FT
(9)
JTMS-SWDIO, IR_OUT, CM4_EVENTOUT
-
-
-
40
VDD
S
-
-
41
PA14
(JTCK_SWCLK)
I/O
FT
(9)
JTCK-SWCLK, LPTIM1_OUT,
I2C1_SMBA, CM4_EVENTOUT
-
42
PA15
(JTDI)
I/O
FT
(9)
JTDI, TIM2_CH1, TIM2_ETR, SPI1_NSS,
CM4_EVENTOUT, MCO
-
43
PB3
(JTDO)
I/O
FT_a
-
JTDO-TRACESWO, TIM2_CH2,
SPI1_SCK, USART1_RTS,
CM4_EVENTOUT
-
44
PB4
(NJTRST)
I/O
FT_a
(9)
NJTRST, SPI1_MISO, USART1_CTS,
TIM17_BKIN, CM4_EVENTOUT
-
45
PB5
I/O
FT
-
LPTIM1_IN1, I2C1_SMBA, SPI1_MOSI,
USART1_CK, TIM16_BKIN,
CM4_EVENTOUT
-
46
PB6
I/O FT_fa
-
LPTIM1_ETR, I2C1_SCL, USART1_TX,
TIM16_CH1N, MCO, CM4_EVENTOUT
-
48/121
DS13047 Rev 7
STM32WB50CG STM32WB30CE
Pinouts and pin description
47
PB7
48
VDD
I/O FT_fa
S
-
Notes
Name (function
after reset)
Pin type
Number
Pin (UFQFPN48)
I/O structures
Table 14. STM32WB50CG and STM32WB30CE pin and ball definitions (continued)
-
Alternate functions
LPTIM1_IN2, TIM1_BKIN, I2C1_SDA,
USART1_RX, TIM17_CH1N,
CM4_EVENTOUT
-
-
Additional functions
PVD_IN
-
1. PC14 and PC15 are supplied through the power switch. As this switch only sinks a limited amount of current (3 mA), the
use of the PC14 and PC15 GPIOs in output mode is limited:
- the speed must not exceed 2 MHz with a maximum load of 30 pF
- these GPIOs must not be used as current sources (e.g. to drive an LED).
2. After a Backup domain power-up, PC14 and PC15 operate as GPIOs. Their function then depends on the content of the
RTC registers that are not reset by the system reset. For details on how to manage these GPIOs, refer to the Backup
domain and RTC register descriptions in the reference manual RM0471, available on www.st.com.
3. The clock on LSCO is available in Run, Stop, and on PA2 in Standby and Shutdown modes.
4. On UFQFPN48 VDDA is connected to VREF+.
5. RF pin, use the nominal PCB layout.
6. 32 MHz oscillator pins, use the nominal PCB layout according to reference design (see AN5165).
7. Reserved for production, must be kept unconnected.
8. High frequency (above 32 KHz) may impact the RF performance. Set output speed GPIOB_OSPEEDRy[1:0] to 00 (y = 0
and 1) during RF operation.
9. After reset, these pins are configured as JTAG/SW debug alternate functions, and the internal pull-up on PA15, PA13 and
PB4 pins and the internal pull-down on PA14 pin are activated.
DS13047 Rev 7
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52
AF1
AF2
AF3
AF4
AF5
AF6
AF7
AF8
AF12
AF11
AF14
AF15
SYS_AF
TIM1/
TIM2/
LPTIM1
TIM1/
TIM2
TIM1
I2C1
SPI1
RF
USART1
IR
TIM1
-
TIM2/
TIM16/
TIM17/
LPTIM2
EVENTOUT
PA0
-
TIM2_CH1
-
-
-
-
-
-
-
-
-
TIM2_ETR
CM4_
EVENTOUT
PA1
-
TIM2_CH2
-
-
I2C1_SMBA
SPI1_SCK
-
-
-
-
-
-
CM4_
EVENTOUT
PA2
LSCO
TIM2_CH3
-
-
-
-
-
-
-
-
-
-
CM4_
EVENTOUT
PA3
-
TIM2_CH4
-
-
-
-
-
-
-
-
-
-
CM4_
EVENTOUT
PA4
-
-
-
-
-
SPI1_NSS
-
-
-
-
-
LPTIM2_OUT
CM4_
EVENTOUT
PA5
-
TIM2_CH1
TIM2_ETR
-
-
SPI1_SCK
-
-
-
-
-
LPTIM2_ETR
CM4_
EVENTOUT
PA6
-
TIM1_BKIN
-
-
-
SPI1_MISO
-
-
-
TIM1_BKIN
-
TIM16_CH1
CM4_
EVENTOUT
PA7
-
TIM1_CH1N
-
-
-
SPI1_MOSI
-
-
-
-
-
TIM17_CH1
CM4_
EVENTOUT
PA8
MCO
TIM1_CH1
-
-
-
-
-
USART1_CK
-
-
-
LPTIM2_OUT
CM4_
EVENTOUT
PA9
-
TIM1_CH2
-
-
I2C1_SCL
-
-
USART1_TX
-
-
-
-
CM4_
EVENTOUT
PA10
-
TIM1_CH3
-
-
I2C1_SDA
-
-
USART1_RX
-
-
-
TIM17_BKIN
CM4_
EVENTOUT
PA11
-
TIM1_CH4
TIM1_BKIN2
-
-
SPI1_MISO
-
USART1_CTS
-
TIM1_BKIN2
-
-
CM4_
EVENTOUT
PA12
-
TIM1_ETR
-
-
-
SPI1_MOSI
-
USART1_RTS
-
-
-
-
CM4_
EVENTOUT
PA13
JTMSSWDIO
-
-
-
-
-
-
-
IR_OUT
-
-
-
CM4_
EVENTOUT
PA14
JTCKSWCLK
LPTIM1_OUT
-
-
I2C1_SMBA
-
-
-
-
-
-
-
CM4_
EVENTOUT
PA15
JTDI
TIM2_CH1
TIM2_ETR
-
-
SPI1_NSS
MCO
-
-
-
-
-
CM4_
EVENTOUT
Port
DS13047 Rev 7
A
STM32WB50CG STM32WB30CE
AF0
Pinouts and pin description
50/121
Table 15. Alternate functions
AF1
AF2
AF3
AF4
AF5
AF6
AF7
AF8
AF12
AF11
AF14
AF15
SYS_AF
TIM1/
TIM2/
LPTIM1
TIM1/
TIM2
TIM1
I2C1
SPI1
RF
USART1
IR
TIM1
-
TIM2/
TIM16/
TIM17/
LPTIM2
EVENTOUT
PB0
-
-
-
-
-
-
RF_TX_
MOD_EXT_PA
-
-
-
-
-
CM4_
EVENTOUT
PB1
-
-
-
-
-
-
-
-
-
-
-
LPTIM2_IN1
CM4_
EVENTOUT
PB2
RTC_
OUT
LPTIM1_OUT
-
-
-
SPI1_NSS
-
-
-
-
-
-
CM4_
EVENTOUT
PB3
JTDOTRACE
SWO
TIM2_CH2
-
-
-
SPI1_SCK
-
USART1_RTS
-
-
-
-
CM4_
EVENTOUT
PB4
NJTRST
-
-
-
-
SPI1_MISO
-
USART1_CTS
-
-
-
TIM17_BKIN
CM4_
EVENTOUT
PB5
-
LPTIM1_IN1
-
-
I2C1_SMBA
SPI1_MOSI
-
USART1_CK
-
-
-
TIM16_BKIN
CM4_
EVENTOUT
PB6
MCO
LPTIM1_ETR
-
-
I2C1_SCL
-
-
USART1_TX
-
-
-
TIM16_CH1N
CM4_
EVENTOUT
PB7
-
LPTIM1_IN2
-
TIM1_BKIN
I2C1_SDA
-
-
USART1_RX
-
-
-
TIM17_CH1N
CM4_
EVENTOUT
PB8
-
TIM1_CH2N
-
-
I2C1_SCL
-
-
-
-
-
-
TIM16_CH1
CM4_
EVENTOUT
PB9
-
TIM1_CH3N
-
-
I2C1_SDA
-
-
-
IR_OUT
-
-
TIM17_CH1
CM4_
EVENTOUT
PC14
-
-
-
-
-
-
-
-
-
-
-
-
CM4_
EVENTOUT
PC15
-
-
-
-
-
-
-
-
-
-
-
-
CM4_
EVENTOUT
E
PE4
-
-
-
-
-
-
-
-
-
-
-
-
CM4_
EVENTOUT
H
PH3
LSCO
-
-
-
-
-
-
-
-
-
-
-
CM4_
EVENTOUT
Port
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B
C
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Pinouts and pin description
AF0
STM32WB50CG STM32WB30CE
Table 15. Alternate functions (continued)
Memory mapping
5
STM32WB50CG STM32WB30CE
Memory mapping
The STM32WB50CG and STM32WB30CE devices feature a single physical address space
that can be accessed by the application processor and by the RF subsystem.
A part of the Flash memory and of the SRAM2a and SRAM2b memories are made secure,
exclusively accessible by the CPU2, protected against execution, read and write from CPU1
and DMA.
In case of shared resources the SW should implement arbitration mechanism to avoid
access conflicts. This happens for peripherals Reset and clock controller (RCC), Power
controller (PWC), EXTI and Flash interface, and can be implemented using the built-in
semaphore block (HSEM).
By default the RF subsystem and CPU2 operate in secure mode. This implies that part of
the Flash and of the SRAM2 memories can only be accessed by the RF subsystem and by
the CPU2. In this case the Host processor (CPU1) has no access to these resources.
The detailed memory map and the peripheral mapping of the devices can be found in the
reference manual RM0471.
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DS13047 Rev 7
STM32WB50CG STM32WB30CE
Electrical characteristics
6
Electrical characteristics
6.1
Parameter conditions
Unless otherwise specified, all voltages are referenced to VSS.
6.1.1
Minimum and maximum values
Unless otherwise specified, the minimum and maximum values are guaranteed in the worst
conditions of ambient temperature, supply voltage and frequencies by tests in production on
100% of the devices with an ambient temperature at TA = 25 °C and TA = TAmax (given by
the selected temperature range).
Data based on characterization results, design simulation and/or technology characteristics
are indicated in the table footnotes and are not tested in production. Based on
characterization, the minimum and maximum values refer to sample tests and represent the
mean value plus or minus three times the standard deviation (mean ±3σ).
6.1.2
Typical values
Unless otherwise specified, typical data are based on VDD = VDDA = VDDRF = 3 V,
TA = 25 °C. They are given only as design guidelines and are not tested.
Typical ADC accuracy values are determined by characterization of a batch of samples from
a standard diffusion lot over the full temperature range, where 95% of the devices have an
error less than or equal to the value indicated (mean ± 2σ).
6.1.3
Typical curves
Unless otherwise specified, all typical curves are given only as design guidelines and are
not tested.
6.1.4
Loading capacitor
The loading conditions used for pin parameter measurement are shown in Figure 9.
6.1.5
Pin input voltage
The input voltage measurement on a pin of the device is described in Figure 10.
Figure 9. Pin loading conditions
Figure 10. Pin input voltage
MCU pin
MCU pin
C = 50 pF
VIN
MS19210V1
DS13047 Rev 7
MS19211V1
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110
Electrical characteristics
6.1.6
STM32WB50CG STM32WB30CE
Power supply scheme
Figure 11. Power supply scheme
VBAT
Backup circuitry
(LSE, RTC and
backup registers)
1.55 V to 3.6 V
Power switch
VDD
VCORE
n x VDD
Regulator
VDDIO1
Level shifter
OUT
GPIOs
n x 100 nF + 1 x 4.7 μF
IN
IO
logic
Kernel logic
(CPU, digital
and memories
VSS
VDDA
VDDA
VREF+
10 nF + 1 μF
VREF-
ADC
VSS
VDDRF
100 nF
+ 100 pF
Radio
VSSRF
Exposed pad
VSS
To all modules
MS53513V2
Caution:
54/121
Each power supply pair (such as VDD / VSS, VDDA / VSS) must be decoupled with filtering
ceramic capacitors as shown in Figure 11. These capacitors must be placed as close as
possible to (or below) the appropriate pins on the underside of the PCB to ensure the good
functionality of the device.
DS13047 Rev 7
STM32WB50CG STM32WB30CE
6.1.7
Electrical characteristics
Current consumption measurement
Figure 12. Current consumption measurement scheme
IDDRF
VDDRF
IDDVBAT
VBAT
IDD
VDD
IDDA
VDDA
MSv63021V1
6.2
Absolute maximum ratings
Stresses above the absolute maximum ratings listed in Table 16, Table 17 and Table 18
may cause permanent damage to the device. These are stress ratings only and functional
operation of the device at these conditions is not implied. Exposure to maximum rating
conditions for extended periods may affect device reliability.
Table 16. Voltage characteristics(1)
Symbol
VDDX - VSS
Ratings
External main supply voltage
(including VDD, VDDA, VDDRF, VBAT)
Min
Max
-0.3
4.0
min (VDD, VDDA, VDDRF) + 4.0(3)(4)
Input voltage on FT_xxx pins
VIN(2)
Input voltage on TT_xx pins
Unit
VSS-0.3
Input voltage on any other pin
V
4.0
4.0
|∆VDDx|
Variations between different VDDX
power pins of the same domain
-
50
|VSSx-VSS|
Variations between all the different
ground pins
-
50
mV
1. All main power (VDD, VDDRF, VDDA, VBAT) and ground (VSS) pins must always be connected to the external power
supply, in the permitted range.
2. VIN maximum must always be respected. Refer to Table 17 for the maximum allowed injected current values.
3. This formula has to be applied only on the power supplies related to the IO structure described in the pin definition table.
4. To sustain a voltage higher than 4 V the internal pull-up/pull-down resistors must be disabled.
DS13047 Rev 7
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110
Electrical characteristics
STM32WB50CG STM32WB30CE
Table 17. Current characteristics
Symbol
Ratings
Max
∑IVDD
Total current into sum of all VDD power lines (source)(1)
130
∑IVSS
(sink)(1)
130
Total current out of sum of all VSS ground lines
IVDD(PIN)
Maximum current into each VDD power pin
(source)(1)
100
IVSS(PIN)
Maximum current out of each VSS ground pin (sink)(1)
100
Output current sunk by any I/O and control pin except FT_f
20
Output current sunk by any FT_f pin
20
Output current sourced by any I/O and control pin
20
IIO(PIN)
∑IIO(PIN)
IINJ(PIN)(3)
∑|IINJ(PIN)|
Total output current sunk by sum of all I/Os and control pins(2)
Total output current sourced by sum of all I/Os and control pins
Unit
mA
100
(2)
100
Injected current on FT_xxx, TT_xx, RST and B pins, except PB0 and PB1
–5 / +0(4)
Injected current on PB0 and PB1
-5/0
Total injected current (sum of all I/Os and control pins)(5)
25
1. All main power (VDD, VDDRF, VDDA, VBAT) and ground (VSS) pins must always be connected to the external power
supply, in the permitted range.
2. This current consumption must be correctly distributed over all I/Os and control pins. The total output current must not be
sunk/sourced between two consecutive power supply pins referring to high pin count packages.
3. Positive injection (when VIN > VDD) is not possible on these I/Os and does not occur for input voltages lower than the
specified maximum value.
4. A negative injection is induced by VIN < VSS. IINJ(PIN) must never be exceeded. Refer to Table 16 for the maximum allowed
input voltage values.
5. When several inputs are submitted to a current injection, the maximum ∑|IINJ(PIN)| is the absolute sum of the negative
injected currents (instantaneous values).
Table 18. Thermal characteristics
Symbol
TSTG
TJ
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Ratings
Storage temperature range
Maximum junction temperature
DS13047 Rev 7
Value
–65 to +150
110
Unit
°C
STM32WB50CG STM32WB30CE
Electrical characteristics
6.3
Operating conditions
6.3.1
Summary of main performance
Table 19. Main performance at VDD = 3.3 V
Parameter
Test conditions
Typ
VBAT (VBAT = 1.8 V, VDD = 0 V)
0.002
Shutdown (VDD = 2.0 V)
0.014
Standby (VDD = 2.0 V, 32 KB RAM retention)
0.35
Stop2
1.85
Sleep (16 MHz)
845
LP run (2 MHz)
320
Run (64 MHz)
8150
Core current
ICORE
consumption
Radio RX
IPERI
Peripheral
current
consumption
(1)
7900
Radio TX 0 dBm output power(1)
8800
Advertising with Stop2(2)
(Tx = 0 dBm; Period 1.28 s; 31 bytes, 3 channels)
20
Advertising with Stop2(2)
(Tx = 0 dBm, 6 bytes; period 10.24 s, 3 channels)
4
LP timers
-
6
RTC
-
2.5
BLE
Unit
µA
1. Power consumption including RF subsystem and digital processing.
2. Power consumption averaged over 100 s including Cortex M4, RF subsystem, digital processing and Cortex M0+.
6.3.2
General operating conditions
Table 20. General operating conditions
Symbol
Parameter
Conditions
Min
Max
fHCLK
Internal AHB clock frequency
-
0
64
fPCLK1
Internal APB1 clock frequency
-
0
64
fPCLK2
Internal APB2 clock frequency
-
0
64
-
2.0(1)
3.6
VDD
Standard operating voltage
VDDA
Analog supply voltage
VBAT
Backup operating voltage
-
1.55
3.6
Minimum RF voltage
-
2.0
3.6
–0.3
VDD + 0.3
–0.3
min (min (VDD, VDDA) +
3.6 V, 5.5 V)(3)(4)
VDDRF
ADC used
2.0
ADC not used(2)
2.0
TT_xx I/O
VIN
I/O input voltage
All I/O except TT_xx
DS13047 Rev 7
3.6
Unit
MHz
V
V
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110
Electrical characteristics
STM32WB50CG STM32WB30CE
Table 20. General operating conditions (continued)
Symbol
Parameter
PD
Power dissipation at
TA = 85 °C for suffix 5
TA
Ambient temperature
TJ
Junction temperature range
Conditions
Min
Max
Unit
-
803
mW
–10
85
UFQFPN48
Maximum power dissipation
Low-power dissipation(5)
105
-
–10
°C
105
1. When RESET is released functionality is guaranteed down to VBOR0 Min.
2. When not used, VDDA must be connected to VDD.
3. This formula has to be applied only on the power supplies related to the IO structure described by the pin definition table.
Maximum I/O input voltage is the smallest value between min (VDD, VDDA) + 3.6 V and 5.5V.
4. For operation with voltage higher than min (VDD, VDDA) + 0.3 V, the internal pull-up and pull-down resistors must be
disabled.
5. In low-power dissipation state, TA can be extended to this range as long as TJ does not exceed TJmax (see Section 7.5:
Thermal characteristics).
6.3.3
RF BLE characteristics
Table 21. RF transmitter BLE characteristics
Symbol
Parameter
Test conditions
Min
Typ
Max
Unit
Fop
Frequency operating range
-
2402
-
2480
Fxtal
Crystal frequency
-
-
32
-
∆F
Delta frequency
-
-
250
-
kHz
Rgfsk
On air data rate
-
-
1
-
Mbps
RF channel spacing
-
-
2
-
MHz
PLLres
MHz
Table 22. RF transmitter BLE characteristics (1 Mbps)(1)
Symbol
Prf
Pband
BW6dB
IBSE
fd
maxdr
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Parameter
Test conditions
Min
Typ
Max
Unit
Maximum output power
-
-
4.0
-
0 dBm output power
-
-
0
-
Minimum output power
-
-
-20
-
-0.5
-
0.4
dB
kHz
dBm
Output power variation over the band
Tx = 0 dBm - Typical
6 dB signal bandwidth
Tx = Maximum output power
-
670
-
2 MHz
Bluetooth®
Low Energy:-20 dBm
-
-50
-
≥ 3 MHz
Bluetooth® Low Energy: -30 dBm
-
-53
-
Bluetooth® Low Energy: ±50 kHz
-50
-
+50
kHz
-20
-
+20
kHz/
50 µs
In band spurious emission
Frequency drift
Maximum drift rate
®
Bluetooth Low Energy:
±20 kHz / 50 µs
DS13047 Rev 7
dBm
STM32WB50CG STM32WB30CE
Electrical characteristics
Table 22. RF transmitter BLE characteristics (1 Mbps)(1) (continued)
Symbol
Parameter
Test conditions
®
Min
Typ
Max
-
+150
Frequency offset
Bluetooth Low Energy:
±150 kHz
-150
∆f1
Frequency deviation average
Bluetooth® Low Energy:
between 225 and 275 kHz
225
-
275
∆fa
Frequency deviation
∆f2 (average) / ∆f1 (average)
Bluetooth® Low Energy:> 0.80
0.80
-
-
fo
OBSE(2)
Out of band
spurious emission
Unit
kHz
< 1 GHz
-
-
-61
-
≥ 1 GHz
-
-
-46
-
dBm
1. :Measured in conducted mode, based on reference design (see AN5165), using output power specific external RF filter and
impedance matching networks to interface with a 50 Ω antenna.
2. Suitable for systems targeting compliance with worldwide radio-frequency regulations ETSI EN 300 328 and EN 300 440
Class 2 (Europe), FCC CFR47 Part 15 (US), and ARIB STD-T66 (Japan).
Table 23. RF receiver BLE characteristics (1 Mbps)
Symbol
Parameter
Prx_max
Maximum input signal
Psens(1)
High sensitivity mode
Test conditions
PER