STN2N06

STN2N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ADVANCE DATA TYPE STN2N06 s s s V DSS 60 V R DS(on) < 0.250 Ω I D CONT 2A s s s TYPICAL RDS(on) = 0.21 Ω AVALANCHE RUGGED TECHNOLOGY SOT-223 CAN BE WAVE OR REFLOW SOLDERED AVAILABLE IN TAPE AND REEL ON REQUEST 150 oC OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION 2 1 SOT-223 2 3 APPLICATIONS HARD DISK DRIVERS s SMALL MOTOR CURRENT SENSE CIRCUITS s DC-DC CONVERTERS AND POWER SUPPLIES s INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V DS VDGR V GS I D (*) I D (*) I DM ( • ) P tot T stg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 2 0 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 2 5 C Drain Current (continuous) at T c = 1 00 o C Drain Current (pulsed) Total Dissipation at T c = 2 5 C Derating Factor Storage Temperature Max. Operating Junction Temperature o o Value 60 60 ± 20 2 1.3 8 2.7 0.022 -65 to 150 150 Unit V V V A A A W W/ o C o o C C (•) Pulse width limited by safe operating area (*) Limited by package March 1996 1/5 STN2N06 THERMAL DATA R thj-pcb R thj-amb Tl Thermal Resistance Junction-PC Board Max Thermal Resistance Junction-ambient Max (Surface Mounted) Maximum Lead Temperature For Soldering Purpose 46 60 260 o o C/W C/W o C AVALANCHE CHARACTERISTICS Symbol I AR E AS EAR I AR Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j m ax, δ < 1 %) Single Pulse Avalanche Energy (starting T j = 2 5 o C, ID = I AR , V DD = 2 5 V) Repetitive Avalanche Energy (pulse width limited by T j m ax, δ < 1 %) Avalanche Current, Repetitive or Not-Repetitive (T c = 1 00 o C, pulse width limited by T j m ax, δ < 1 %) Max Value 2 40 10 1.3 Unit A mJ mJ A ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol V (BR)DSS I DSS I GSS Parameter Drain-source Breakdown Voltage Test Conditions I D = 250 µ A VGS = 0 Min. 60 250 1000 ± 1 00 Typ. Max. Unit V µA µA nA Zero Gate Voltage V DS = M ax Rating Drain Current (V GS = 0 ) V DS = M ax Rating x 0.8 Gate-body Leakage Current (V DS = 0) V GS = ± 2 0 V T c = 1 25 o C ON (∗) Symbol V GS(th) R DS(on) ID(on) Parameter Gate Threshold Voltage V DS = VGS Static Drain-source On Resistance Test Conditions ID = 2 50 µ A T c = 1 00o C 2 Min. 2 Typ. 3 0.21 Max. 4 0.25 0.5 Unit V Ω Ω A V GS = 10 V I D = 1 A V GS = 1 0 V ID = 1 A On State Drain Current V DS > I D(on) x R DS(on)max V GS = 1 0 V DYNAMIC Symbol g fs ( ∗ ) C iss C oss C rss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions V DS > I D(on) x R DS(on)max V DS = 25 V f = 1 MHz ID = 1 A V GS = 0 V Min. 0.8 Typ. 1.5 260 90 30 340 120 40 Max. Unit S pF pF pF 2/5 STN2N06 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol t d(on) tr (di/dt) on Qg Q gs Q gd Parameter Turn-on Time Rise Time Turn-on Current Slope Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions V DD = 3 0 V RG = 47 Ω V DD = 4 8 V RG = 47 Ω V DD = 4 8 V ID = 4 A V GS = 1 0 V ID = 8 A V GS = 1 0 V ID = 8 A V GS = 1 0 V Min. Typ. 14 75 240 13 7 4 20 Max. 20 100 Unit ns ns A/ µ s nC nC nC SWITCHING OFF Symbol t r(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions V DD = 4 8 V I D = 8 A R G = 4 7 Ω VGS = 1 0 V Min. Typ. 16 22 45 Max. 25 30 60 Unit ns ns ns SOURCE DRAIN DIODE Symbol I SD I SDM (• ) V SD ( ∗ ) t rr Q rr I RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 2 A V GS = 0 70 0.18 5 I SD = 8 A d i/dt = 100 A/ µ s o V DD = 2 5 V T j = 1 50 C Test Conditions Min. Typ. Max. 2 8 1.5 Unit A A V ns µC A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area 3/5 STN2N06 SOT223 MECHANICAL DATA mm MIN. a b c d e1 e4 f g l1 l2 L 2.9 0.67 6.7 3.5 6.3 3 0.7 7 3.5 6.5 2.27 4.57 0.2 0.63 1.5 TYP. 2.3 4.6 0.4 0.65 1.6 MAX. 2.33 4.63 0.6 0.67 1.7 0.32 3.1 0.73 7.3 3.7 6.7 114.2 26.4 263.8 137.8 248 118.1 27.6 275.6 137.8 255.9 MIN. 89.4 179.9 7.9 24.8 59.1 mils TYP. 90.6 181.1 15.7 25.6 63 MAX. 91.7 182.3 23.6 26.4 66.9 12.6 122.1 28.7 287.4 145.7 263.8 DIM. L l2 e1 a b f d c e4 C l1 B C E g P008B 4/5 STN2N06 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1995 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 5/5