STN2NE10

STN2NE10 ® N - CHANNEL 100V - 0.33 Ω - 2A - SOT-223 STripFET POWER MOSFET PRELIMINARY DATA TYPE V DSS R DS(on) ID STN2NE10 100 V < 0.4 Ω 2A ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.33 Ω EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100 % AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION 2 1 DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique "Single Feature Size " stip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS ■ DC MOTOR CONTROL (DISK DRIVES,etc.) ■ DC-DC & DC-AC CONVERTERS ■ SYNCHRONOUS RECTIFICATION ) s ( ct 2 c u d SOT-223 e t le 3 ) s t( o r P INTERNAL SCHEMATIC DIAGRAM o s b O - u d o r P e ABSOLUTE MAXIMUM RATINGS Symbol t e l o V DS V DGR s b O VGS Parameter Drain-source Voltage (V GS = 0) Value Unit 100 V Drain- gate Voltage (R GS = 20 kΩ) 100 V Gate-source Voltage ± 20 V ID Drain Current (continuous) at T c = 25 o C 2 A ID Drain Current (continuous) at T c = 100 o C 1.3 A I DM (•) P tot Drain Current (pulsed) Total Dissipation at T c = 25 o C Derating Factor dv/dt(1 ) T st g Tj Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature (•) Pulse width limited by safe operating area New RDS (on) spec. starting from JULY 98 January 1999 8 A 2.5 W 0.02 W/ o C 6 V/ns -65 to 150 o C 150 o C (1) ISD ≤ 7 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX 1/5 STN2NE10 THERMAL DATA R thj-pcb R thj-amb Tl o 50 60 Thermal Resistance Junction-PC Board Max Thermal Resistance Junction-ambient Max (Surface Mounted) Maximum Lead Temperature For Soldering Purpose o C/W C/W o 260 C AVALANCHE CHARACTERISTICS Symbol Parameter IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max) E AS Single Pulse Avalanche Energy (starting T j = 25 o C, I D = I AR , V DD = 25 V) Max Value Unit 2 A 20 mJ ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol V (BR)DSS Parameter Test Conditions I D = 250 µA Drain-source Breakdown Voltage Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating IGSS Gate-body Leakage Current (V DS = 0) Parameter V GS(th) Gate Threshold Voltage V DS = V GS R DS(on) Static Drain-source On Resistance I D(on) d o r P e bs O 2/5 C iss C oss C rss Parameter ± 100 nA Min. Typ. Max. Unit 2 3 4 V 0.33 0.4 Ω 2 Test Conditions Forward Transconductance V DS > I D(on) x R DS(on)max Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS = 25 V f = 1 MHz ID = 1 A V GS = 0 V V µA µA I D = 1A t c u t e l o g fs (∗) (s) On State Drain Current V DS > I D(on) x R DS(on)max V GS = 10 V DYNAMIC Symbol o s b O - I D = 250 µA V GS = 10 V uc Unit 1 10 r P e t le Test Conditions ) s t( Max. od T c = 125 o C V GS = ± 20 V ON (∗) Typ. 100 V GS = 0 I DSS Symbol Min. A Min. Typ. Max. Unit 1 1.8 S 305 45 21 pF pF pF STN2NE10 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit t d(on) tr Turn-on Delay Time Rise Time V DD = 50 V I D = 35 A VGS = 10 V R G = 4.7 Ω (Resistive Load, see fig. 3) 7 17 Qg Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD = 80 V 14 6 4 19 nC nC nC Typ. Max. Unit ID = 7 A V GS = 10 V ns ns SWITCHING OFF Symbol Parameter Test Conditions Min. t d(of f) tf Turn-off Delay Time Fall Time VDD = 50 V I D = 3.5 A V GS = 10 V R G =4.7 Ω (Resistive Load, see fig. 3) 25 7 ns ns tr(Voff) tf tc Off-voltage Rise Time Fall Time Cross-over Time V clamp = 16 V I D = 80 A V GS = 10 V R G = 4.7 Ω (Inductive Load, see fig. 5) 7 8 16 ) s t( c u d SOURCE DRAIN DIODE Symbol Parameter Test Conditions ISD I SDM (•) Source-drain Current Source-drain Current (pulsed) V SD (∗) Forward On Voltage I SD = 2 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 7 A di/dt = 100 A/µs V DD = 30 V (see test circuit, fig. 5) t rr Q rr I RRM ) s ( ct V GS = 0 e t le so b O - o r P Min. Typ. ns ns ns Max. Unit 2 8 A A 1.5 V 75 ns 210 µC 5.5 A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area u d o r P e t e l o s b O 3/5 STN2NE10 SOT-223 MECHANICAL DATA mm DIM. mils MIN. TYP. MAX. MIN. TYP. MAX. a 2.27 2.3 2.33 89.4 90.6 91.7 b 4.57 4.6 4.63 179.9 181.1 182.3 c 0.2 0.4 0.6 7.9 15.7 23.6 d 0.63 0.65 0.67 24.8 25.6 26.4 e1 1.5 1.6 1.7 59.1 63 66.9 e4 0.32 f 2.9 3 3.1 114.2 118.1 g 0.67 0.7 0.73 26.4 27.6 l1 6.7 7 7.3 263.8 l2 3.5 3.5 3.7 137.8 L 6.3 6.5 6.7 248 L e1 ) s ( ct u d o r P e t e l o o s b O - e t le od 122.1 28.7 275.6 287.4 137.8 145.7 255.9 263.8 l2 d c b Pr uc e4 f C l1 s b O a ) s t( 12.6 B C E g P008B 4/5 STN2NE10 c u d e t le ) s ( ct ) s t( o r P o s b O - u d o r P e t e l o s b O Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 1998 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com . 5/5