STN3N40K3

STN3N40K3 N-channel 400 V, 3 Ω typ., 1.8 A SuperMESH3™ Power MOSFET in a SOT-223 package Datasheet - production data Features 4 1 2 Order code VDS RDS(on) max ID PTOT STN3N40K3 400V 3.4 Ω 1.8 A 3.3W • 100% avalanche tested 3 • Extremely high dv/dt capability • Gate charge minimized • Very low intrinsic capacitance SOT-223 • Improved diode reverse recovery characteristics • Zener-protected Figure 1. Internal schematic diagram Application ' • Switching applications Description * 6 AM01476v1 This SuperMESH3™ Power MOSFET is the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. This device boasts an extremely low onresistance, superior dynamic performance and high avalanche capability, rendering it suitable for the most demanding applications. Table 1. Device summary Order code Marking Package Packaging STN3N40K3 3N40K3 SOT-223 Tape and reel June 2014 This is information on a product in full production. DocID17697 Rev 3 1/14 www.st.com Contents STN3N40K3 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics ................................... 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/14 DocID17697 Rev 3 STN3N40K3 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain source voltage 400 V VGS Gate-source voltage ± 30 V (1) ID Drain current continuous TC = 25 °C ID Drain current continuous TC = 100 °C 1 (1) A IDM (2) Drain current pulsed 7.2 A IAR (3) Avalanche current, repetitive or not repetitive 0.6 A EAS (4) Single pulse avalanche energy 45 mJ Total dissipation at Tamb = 25 °C 3.3 W Peak diode recovery voltage slope 12 V/ns ESD Gate-source human body model (R = 1.5 kΩ, C = 100 pF) 1 kV Tj Tstg Operating junction temperature Storage temperature -55 to 150 °C Value Unit 37.9 °C/W PTOT dv/dt (5) 1.8 A 1. Drain current limited by maximum junction temperature. 2. Pulse width limited by safe operating area. 3. Pulse width limited by TJmax. 4. Starting Tj = 25 °C, ID = IAR, VDD = 50 V. 5. Isd ≤ 1.8 A, di/dt ≤ 400 A/µs, VDD ≤ 80% V (BR)DSS. Table 3. Thermal data Symbol Rthj-amb(1) Parameter Thermal resistance junction-amb max. 2 1. When mounted on FR-4 board of 1 inch , 2oz Cu, t < 30 s DocID17697 Rev 3 3/14 14 Electrical characteristics 2 STN3N40K3 Electrical characteristics (Tcase = 25 °C unless otherwise specified) Table 4. On /off states Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage IDSS Zero gate voltage drain current IGSS Gate-body leakage current ID = 1 mA, VGS = 0 Min. Typ. Max. 400 Unit V VGS = 0, VDS = 400 V 1 µA VGS = 0, VDS = 400 V, TC = 125 °C 50 µA VDS = 0, VGS = ± 20 V ±10 µA 3.75 4.5 V 3.1 3.4 Ω Min. Typ. Max. Unit - 165 - pF - 17 - pF - 3 - pF - 9 - pF - 14 - pF f=1 MHz open drain - 10 - Ω VDD = 320 V, ID = 1.8 A, VGS = 10 V (see Figure 18) - 11 - nC - 2 - nC - 7 - nC VGS(th) Gate threshold voltage VGS = VDS, ID = 50 µA RDS(on) Static drain-source on resistance 3 VGS = 10 V, ID = 0.6 A Table 5. Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Test conditions VDS = 50 V, f = 1 MHz, VGS = 0 Equivalent output Coss(er)(1) capacitance energy related Coss(tr)(2) Equivalent output capacitance time related Rg Instrinsic gate resistance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge VDS= 0 to 320 V, VGS= 0 1. Is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 2. Is defined as a constant equivalent capacitance giving the same storage energy as Coss when VDS increases from 0 to 80% VDSS 4/14 DocID17697 Rev 3 STN3N40K3 Electrical characteristics Table 6. Switching times Symbol td(on) tr td(off) tf Parameter Test conditions Turn on delay time VDD = 200 V, ID = 0.6, RG = 4.7 Ω, VGS = 10 V (see Figure 17) Rise time Turn off delay time Fall time Min. Typ. Max Unit - 7 - ns - 8 - ns - 18 - ns - 14 - ns Min. Typ. Max. Unit Table 7. Source drain diode Symbol Parameter Test conditions ISD Source-drain current - 1.8 A ISDM (1) Source-drain current (pulsed) - 7.2 A VSD (2) Forward on voltage - 1.5 V trr Qr IRRM trr Qrr IRRM ISD = 0.6 A, VGS = 0 Reverse recovery time ISD = 1.8 A, di/dt = 100 A/µs Reverse recovery charge VDD = 60 V Reverse recovery current (see Figure 20) - 145 ns - 490 nC - 7 A Reverse recovery time - 166 ns - 580 nC - 7 A ISD = 1.8 A, di/dt = 100 A/µs Reverse recovery charge VDD = 60 V, Tj = 150 °C Reverse recovery current (see Figure 20) 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% DocID17697 Rev 3 5/14 14 Electrical characteristics 2.1 STN3N40K3 Electrical characteristics Figure 2. Safe operating area Figure 3. Thermal impedance   ,'$ PV PV Zth = K * Rthj-amb  PV   7M ƒ& 7F ƒ&  6LQJOHSXOVH V     9GV9   $09 Figure 4. Output characteristics Figure 5. Transfer characteristics AM09050v1 ID (A) VGS=10V 3.5 7V 3.0 AM08995v1 ID (A) VDS=15V 3.0 2.5 2.5 2.0 2.0 6V 1.5 1.0 1.0 0.5 0.5 0 0 1.5 5V 5 10 15 20 25 Figure 6. Gate charge vs gate-source voltage 9*6 9 2 4 6 8 VGS(V) Figure 7. Static drain-source on resistance RDS(on) (Ω) 4.2 9'' 9 ,' $  0 0 VDS(V) AM08997v1 VGS=10V 4.0  3.8  3.6  3.4 3.2  3.0   2.8       4JQ& *,3*   59 6/14 DocID17697 Rev 3 2.6 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 ID(A) STN3N40K3 Electrical characteristics Figure 8. Capacitance variations Figure 9. Output capacitance stored energy AM08998v1 C (pF) AM08999v1 Eoss (µJ) 0.8 Ciss 0.7 100 0.6 0.5 0.4 10 Coss 0.3 0.2 Crss 1 0.1 1 100 10 AM09000v1 (norm) 100 200 300 400 VDS(V) Figure 11. Normalized on resistance vs. temperature AM09001v1 RDS(on) (norm) ID=50µA 1.10 0 0 VDS(V) Figure 10. Normalized gate threshold voltage vs. temperature VGS(th) 0.1 VGS=10V 2.5 1.00 2.0 1.5 0.90 1.0 0.80 0.5 0.70 -75 -25 25 75 125 Figure 12. Source-drain diode forward characteristics AM09003v1 VSD (V) 0 -75 TJ(°C) -25 25 75 125 TJ(°C) Figure 13. Normalized V(BR)DSS vs. temperature AM09002v1 V(BR)DSS (norm) TJ=-50°C ID=1mA 1.0 1.10 0.9 1.05 0.8 TJ=25°C 0.7 1.00 TJ=150°C 0.6 0.95 0.5 0.4 0 0.4 0.8 1.2 1.6 ISD(A) 0.90 -75 DocID17697 Rev 3 -25 25 75 125 TJ(°C) 7/14 14 Electrical characteristics STN3N40K3 Figure 14. Maximum avalanche energy vs. starting Tj AM09004v1 EAS (mJ) 50 ID=0.6 A VDD=50 V 45 40 35 30 25 20 15 10 5 0 0 8/14 20 40 60 80 100 120 140 TJ(°C) DocID17697 Rev 3 STN3N40K3 3 Test circuits Test circuits Figure 15. Switching times test circuit for resistive load Figure 16. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF IG=CONST VDD VGS 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 17. Switching times test circuit for resistive load A A Figure 18. Gate charge test circuit L A D G D.U.T. FAST DIODE B B VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 19. Unclamped inductive waveform Figure 20. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 0 DocID17697 Rev 3 10% AM01473v1 9/14 14 Package mechanical data 4 STN3N40K3 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 10/14 DocID17697 Rev 3 STN3N40K3 Package mechanical data Figure 21. SOT-223 mechanical data drawing 0046067_N Table 8. SOT-223 mechanical data mm Dim. Min. Typ. A Max. 1.80 A1 0.02 0.10 B 0.60 0.70 0.85 B1 2.9 3.0 3.15 c 0.24 0.26 0.35 D 6.30 6.50 6.70 e 2.30 6.70 e1 4.60 E 3.30 3.50 3.70 H 6.70 7.0 7.30 V 10° DocID17697 Rev 3 11/14 14 Package mechanical data STN3N40K3 Figure 22. SOT-223 footprint 0046067_N_footprint 12/14 DocID17697 Rev 3 STN3N40K3 5 Revision history Revision history Table 9. Document revision history Date Revision 29-Jun-2010 1 First release. 08-Apr-2011 2 Document status promoted from preliminary data to datasheet. 3 Updated silhouette, features and Figure 1: Internal schematic diagram in cover page. Updated Table 2: Absolute maximum ratings, Table 3: Thermal data, and Table 4: On /off states. Updated Figure 2: Safe operating area and Figure 6: Gate charge vs gate-source voltage. Updated Section 4: Package mechanical data. Minor text changes. 06-Jun-2014 Changes DocID17697 Rev 3 13/14 14 STN3N40K3 Please Read Carefully: Information in this document is provided solely in connection with ST products. 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