STN3NF06L

STN3NF06L N-channel 60 V, 0.07 Ω 4 A, SOT-223 , STripFET™ II Power MOSFET Features Type STN3NF06L ■ ■ ■ ■ VDSS (@Tjmax) 60 V RDS(on) max < 0.1 Ω ID 4A 2 Exceptional dv/dt capability Avalanche rugged technology 100% avalanche tested Low threshold drive 1 SOT-223 2 3 Application ■ Switching applications Figure 1. Internal schematic diagram Description This Power MOSFET is the latest development of STMicroelectronics unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Table 1. Device summary Marking 3NF06L Package SOT-223 Packaging Tape and reel Order code STN3NF06L June 2008 Rev 8 1/12 www.st.com 12 Contents STN3NF06L Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 4 5 Test circuit ................................................ 8 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 STN3NF06L Electrical ratings 1 Electrical ratings Table 2. Symbol VDS VGS ID(1) ID IDM (2) Absolute maximum ratings Parameter Drain-source voltage (VGS = 0) Gate-source voltage Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC=100 °C Drain current (pulsed) Total dissipation at TC = 25 °C Derating factor Value 60 ± 16 4 2.9 16 3.3 0.026 10 200 -55 to 150 Unit V V A A A W W/°C V/ns mJ °C PTOT dv/dt (3) EAS (4) Peak diode recovery voltage slope Single pulse avalanche energy Operating junction temperature Storage temperature TJ Tstg 1. Current limited by the package 2. Pulse width limited by safe operating area 3. 4. ISD ≤3 A, di/dt ≤150 A/µs, VDD ≤ V(BR)DSS, TJ ≤ TJMAX Starting Tj = 25 °C, ID = 4 A, VDD = 30 V Table 3. Symbol Rthj-pcb Rthj-pcb Tl(3) Thermal data Parameter Thermal resistance junction-PCB(1) max Thermal resistance junction-PCB(2) max Value 38 100 260 Unit °C/W °C/W °C Maximum lead temperature for soldering purpose typ 1. When Mounted on FR-4 board with 1 inch2 pad, 2 oz. of Cu. and t