STN3P6F6

STN3P6F6

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

    SOT-223

  • 描述:

    P沟道-60 V、0.13 Ohm典型值、-3 A STripFET F6功率MOSFET,SOT-223封装

  • 数据手册
  • 价格&库存
STN3P6F6 数据手册
STN3P6F6 P-channel -60 V, 0.13 Ω typ., -3 A STripFET™ F6 Power MOSFET in a SOT-223 package Datasheet - production data Features     Order code VDS RDS(on) max. ID STN3P6F6 -60 V 0.16 Ω -3 A Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Applications Figure 1: Internal schematic diagram  Switching applications Description D(2, 4) This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. G(1) S(3) Int_schem_P_ch_nTnZ_SOT_223 Table 1: Device summary Order code Marking Package Packing STN3P6F6 3P6F6 SOT-223 Tape and reel October 2016 DocID023758 Rev 5 This is information on a product in full production. 1/13 www.st.com Contents STN3P6F6 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 9 4 Package information ..................................................................... 10 5 Revision history ............................................................................ 12 2/13 DocID023758 Rev 5 STN3P6F6 1 Electrical ratings Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage -60 V VGS Gate-source voltage ± 20 V ID Drain current (continuous) at Tpcb = 25 °C -3 A ID Drain current (continuous) at Tpcb= 100 °C -2 A Drain current (pulsed) -12 A Total dissipation at Tpcb = 25 °C 2.6 W IDM PTOT (1) Tj Operating junction temperature range Tstg Storage temperature range - 55 to 175 °C °C Notes: (1)Pulse width is limited by safe operating area Table 3: Thermal data Symbol Parameter (1) Thermal resistance junction-pcb Rthj-pcb Value Unit 57 °C/W Notes: (1)When mounted on FR-4 board of 1 inch², 2 Oz Cu, t
STN3P6F6 价格&库存

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