P-CHANNEL 60V - 0.18Ω - 3A SOT-223 STripFET™ II POWER MOSFET
TYPE STN3PF06
s s s s s
STN3PF06
PRELIMINARY DATA
VDSS 60V
RDS(on) ID(on) x RDS(on)max, VGS = 10V 2.5 Min. 2 0.18 Typ. Max. 4 0.20 Unit V Ω A
DYNAMIC
Symbol gfs (1) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS > ID(on) x RDS(on)max, ID =1.25 A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. 1.5 850 230 75 Max. Unit S pF pF pF
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STN3PF06
ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON
Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDD = 30V, ID = 6A RG = 4.7Ω VGS = 10V (see test circuit, Figure 3) VDD = 48V, ID = 12A, VGS = 10 V Min. Typ. 20 40 16 4 6 21 Max. Unit ns ns nC nC nC
SWITCHING OFF
Symbol td(off) tf tr(off) tf tc Parameter Turn-off-Delay Time Fall Time Test Conditions VDD = 30V, ID = 6A, RG = 4.7Ω, VGS = 10V (see test circuit, Figure 3) Vclamp =48V, ID =12 A RG = 4.7Ω, VGS = 10V (see test circuit, Figure 5) Min. Typ. 40 10 Max. Unit ns ns
Off-voltage Rise Time Fall Time Cross-over Time
10 17 30
ns ns ns
SOURCE DRAIN DIODE
Symbol ISD ISDM (1) VSD (2) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 2.5A, VGS = 0 ISD = 12A, di/dt = 100A/µs, VDD = 30V, Tj = 150°C (see test circuit, Figure 5) 100 260 5.2 Test Conditions Min. Typ. Max. 2.5 10 1.2 Unit A A V ns nC A
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area.
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STN3PF06
Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuit For Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times
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STN3PF06
SOT-223 MECHANICAL DATA
mm MIN. A B B1 c D e e1 E H V A1 0.02 3.30 6.70 0.60 2.90 0.24 6.30 0.70 3.00 0.26 6.50 2.30 4.60 3.50 7.00 3.70 7.30 10o 0.130 0.264 TYP. MAX. 1.80 0.80 3.10 0.32 6.70 0.024 0.114 0.009 0.248 0.027 0.118 0.010 0.256 0.090 0.181 0.138 0.276 0.146 0.287 10o MIN. inch TYP. MAX. 0.071 0.031 0.122 0.013 0.264
DIM.
P008B
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STN3PF06
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2000 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com
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