STN6N60M2

STN6N60M2 N-channel 600 V, 1.00 Ω typ., 5.5 A MDmesh M2 Power MOSFET in an SOT223-2 package Features 3 2 1 SOT223-2 D(3) Order code VDS RDS(on) max. ID STN6N60M2 600 V 1.25 Ω 5.5 A • • Extremely low gate charge Excellent output capacitance (Coss) profile • • 100% avalanche tested Zener-protected Applications • G(1) Switching applications Description S(2) NG1D3S2_SOT223 This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. Product status link STN6N60M2 Product summary Order code STN6N60M2 Marking 6N60M2 Package SOT223-2 Packing Tape and reel DS12926 - Rev 2 - May 2020 For further information contact your local STMicroelectronics sales office. www.st.com STN6N60M2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VGS Gate-source voltage ±25 V ID (1) Drain current (continuous) at TC = 25 °C 5.5 A ID (1) Drain current (continuous) at TC = 100 °C 3.5 A IDM (2) Drain current (pulsed) 8 A PTOT W Total power dissipation at TS = 25 °C 6 dv/dt(3) Peak diode recovery voltage slope 15 dv/dt(4) MOSFET dv/dt ruggedness 50 TJ Operating junction temperature range Tstg V/ns -55 to 150 °C Value Unit Thermal resistance junction-solder point 20 °C/W Thermal resistance junction-pcb 38 °C/W Value Unit 0.8 A 83 mJ Storage temperature range 1. Limited by maximum junction temperature. 2. Pulse width limited by safe operating area. 3. ISD ≤ 5.5 A, di/dt = 400 A/μs; VDS(peak) < V(BR)DSS, VDD = 400 V 4. VDS ≤ 480 V Table 2. Thermal data Symbol Rthj-S Rthj-pcb (1) Parameter 1. When mounted on 1 inch² FR-4, 2 Oz copper board. Table 3. Avalanche characteristics Symbol IAR EAS DS12926 - Rev 2 Parameter Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax.) Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) page 2/13 STN6N60M2 Electrical characteristics 2 Electrical characteristics TC = 25 °C unless otherwise specified Table 4. On/off-state Symbol V(BR)DSS Parameter Drain-source breakdown voltage Test conditions Min. VGS= 0 V, ID = 1 mA Typ. 600 Zero gate voltage drain current IGSS Gate body leakage current VDS = 0 V, VGS = ±25 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source onresistance VGS = 10 V, ID = 2 A VGS = 0 V, VDS = 600 V; TC = 125 °C Unit V VGS = 0 V, VDS = 600 V IDSS Max. 1 µA 100 µA ±10 µA 3 4 V 1.00 1.25 Ω Min. Typ. Max. Unit - 220 - pF - 12.5 - pF - 3.3 - pF (1) 2 1. Defined by design, not subject to production test. Table 5. Dynamic Symbol Parameter Test conditions Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Coss eq. (1) Equivalent output capacitance VDS = 0 to 480 V, VGS = 0 V - 23 - pF RG Intrinsic gate resistance f = 1 MHz, ID=0 A - 9 - Ω Qg Total gate charge - 6.2 - nC Qgs Gate-source charge - 1.3 - nC Qgd Gate-drain charge - 2.7 - nC VDS = 100 V, f = 1 MHz, VGS = 0 V VDD = 480 V, ID = 4 A, VGS = 0 to 10 V, (see Figure 15. Test circuit for gate charge behavior) 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. Table 6. Switching times Symbol td(on) tr td(off) tf DS12926 - Rev 2 Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD = 300 V, ID = 2 A, RG = 4.7 Ω, VGS = 10 V (see Figure 14. Test circuit for resistive load switching times and Figure 19. Switching time waveform) Min. Typ. Max. Unit - 6.4 - ns - 6.2 - ns - 18 - ns - 15.8 - ns page 3/13 STN6N60M2 Electrical characteristics Table 7. Source-drain diode Symbol ISD (1) ISDM (2) VSD (3) Parameter Test conditions Min. Typ. Max. Unit Source-drain current - 5.5 A Source-drain current (pulsed) - 8 A - 1.6 V Forward on voltage trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current ISD = 4 A, VGS = 0 V ISD = 4 A, di/dt = 100 A/µs, VDD = 60 V, (see Figure 16. Test circuit for inductive load switching and diode recovery times) ISD = 4 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C (see Figure 16. Test circuit for inductive load switching and diode recovery times) - 229 ns - 721 nC - 6.3 A - 288 ns - 936 nC - 6.5 A 1. Limited by maximum junction temperature. 2. Pulse width limited by safe operating area. 3. Pulsed: pulse duration = 300 µs, duty cycle 1.5%. DS12926 - Rev 2 page 4/13 STN6N60M2 Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 2. Thermal impedance Figure 1. Safe operating area ID (A) GADG150220191054SOA 10 0 tp =1 µs tp =10 µs Operation in this area S is limited by R DS(on) tp =100 µs 10 -1 TJ≤150 °C TC=25 °C VGS=10 V single pulse 10 -2 10 -1 10 0 tp =1 ms 10 1 10 2 1 VDS (V) Figure 3. Output characteristics ID (A) Figure 4. Transfer characteristics GADG150220191052OCH VGS =6 V VGS =7, 8, 9, 10 V 7 ID (A) 7 6 VDS = 17 V 6 5 VGS =5 V 5 4 4 3 3 2 2 1 0 0 GADG150220191053TCH VGS =4 V 2 4 6 8 10 12 14 16 VDS (V) 1 0 0 1 2 3 4 5 6 7 VGS (V) Figure 5. Normalized VBR(DSS) vs temperature Figure 6. Static drain-source on-resistance V(BR)DSS (norm.) RDS(on) (Ω) 1.10 GADG140220191314BDV ID = 1 mA 1.08 GADG140220191313RID VGS =10 V 1.05 1.04 1.00 1.00 0.95 0.96 0.90 0.85 -75 DS12926 - Rev 2 -25 25 75 125 TJ (°C) 0.92 0 1 2 3 4 ID (A) page 5/13 STN6N60M2 Electrical characteristics (curves) Figure 7. Gate charge vs gate-source voltage VDS (V) GADG150220191053QVG VGS (V) VDD = 480 V ID = 4 A 600 500 Figure 8. Capacitance variations C (pF) GADG150220191052CVR 12 10 VDS 400 10 3 CISS 8 10 2 300 6 200 4 100 2 0 0 1 2 3 4 5 6 7 0 Qg (nC) Figure 9. Normalized gate threshold voltage vs temperature VGS(th) (norm.) GADG140220191313VTH ID = 250 μA 1.1 10 0 10 -1 10 0 COSS CRSS 10 1 VDS (V) 10 2 Figure 10. Normalized on-resistance vs temperature RDS(on) (norm.) 2.5 GADG140220191313RON VGS = 10 V 2.0 1.0 1.5 0.9 1.0 0.8 0.5 0.7 0.6 -75 f = 1 MHz 10 1 -25 25 75 125 TJ (°C) Figure 11. Source-drain diode forward characteristics VSD (V) GADG140220191314SDF 0.0 -75 -25 25 75 125 TJ (°C) Figure 12. Output capacitance stored energy EOSS (μJ) GADG150220191216EOS Tj = -50 °C 1.0 1.6 Tj = 25 °C 0.9 1.2 0.8 0.8 Tj = 150 °C 0.7 0.4 0.6 0.5 0 DS12926 - Rev 2 1 2 3 4 ISD (A) 0 0 100 200 300 400 500 600 VDS (V) page 6/13 STN6N60M2 Test circuits 3 Test circuits Figure 13. Test circuit for resistive load switching times Figure 14. Test circuit for gate charge behavior VDD 12 V 2200 + μF 3.3 μF VDD VD VGS 1 kΩ 100 nF RL IG= CONST VGS RG 47 kΩ + pulse width D.U.T. 2.7 kΩ 2200 μF pulse width D.U.T. 100 Ω VG 47 kΩ 1 kΩ AM01469v1 AM01468v1 Figure 15. Test circuit for inductive load switching and diode recovery times D G A D.U.T. S 25 Ω A L A B B 3.3 µF D G + VD 100 µH fast diode B Figure 16. Unclamped inductive load test circuit RG 1000 + µF 2200 + µF VDD 3.3 µF VDD ID D.U.T. S D.U.T. Vi _ pulse width AM01471v1 AM01470v1 Figure 18. Switching time waveform Figure 17. Unclamped inductive waveform ton V(BR)DSS td(on) VD toff td(off) tr tf 90% 90% IDM VDD 10% 0 ID VDD AM01472v1 VGS 0 VDS 10% 90% 10% AM01473v1 DS12926 - Rev 2 page 7/13 STN6N60M2 Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 4.1 SOT223-2 package information Figure 19. SOT223-2 package outline DM00320690_2 DS12926 - Rev 2 page 8/13 STN6N60M2 SOT223-2 package information Table 8. SOT223-2 package mechanical data Dim. mm Min. Typ. A 1.80 A1 0.02 A2 1.50 1.60 1.70 A3 0.80 0.90 1.00 b 0.67 b1 0.66 b2 2.96 b3 2.95 c 0.30 c1 0.29 0.30 0.31 D 6.48 6.53 6.58 D1 6.43 6.48 6.53 E 6.80 E1 3.30 3.38 3.48 E2 3.33 3.43 3.53 e1 4.50 4.60 4.70 L 0.80 1.00 1.20 L1 DS12926 - Rev 2 Max. 0.10 0.80 0.71 0.76 3.09 3.00 3.05 0.35 7.20 1.78 REF R 0.10 R1 0.10 θ 0° θ1 10° 8° 12° 14° page 9/13 STN6N60M2 SOT223-2 package information Figure 20. SOT223-2 recommended footprint (dimensions are in mm) DM00320690_FP DS12926 - Rev 2 page 10/13 STN6N60M2 Revision history Table 9. Document revision history DS12926 - Rev 2 Date Revision Changes 18-Feb-2019 1 First release. 21-May-2020 2 Updated Table 1. Absolute maximum ratings and Table 7. Source-drain diode. page 11/13 STN6N60M2 Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 4.1 SOT223-2 package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 DS12926 - Rev 2 page 12/13 STN6N60M2 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. 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Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2020 STMicroelectronics – All rights reserved DS12926 - Rev 2 page 13/13