STN715

STF715 STN715 ® NPN MEDIUM POWER TRANSISTORS ■ ■ Type Marking STF715 715 STN715 N715 SURFACE-MOUNTING DEVICES IN MEDIUM POWER SOT-223 AND SOT-89 PACKAGES AVAILABLE IN TAPE & REEL PACKING 2 1 APPLICATIONS ■ VOLTAGE REGULATION ■ RELAY DRIVER ■ GENERIC SWITCH 3 2 SOT-223 SOT-89 DECRIPTION The STF715 and STN715 are NPN transistors manufactured using Planar Technology resulting in rugged high performance devices. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Devices Packages V CBO V CEO V EBO IC I CM IB I BM P tot T stg Tj April 2002 Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5 ms) Base Current Base Peak Current (t p < 5 ms) Total Dissipation at T c = 25 o C Storage Temperature Max. Operating Junction Temperature STN715 SOT-223 Unit STF715 SOT-89 140 80 5 1.5 2 0.3 0.6 1.6 1.4 -65 to 150 150 V V V A A A A W o C o C 1/5 STF715 - STN715 THERMAL DATA R thj-amb • Thermal Resistance Junction-ambient Max SOT-223 SOT-89 78 89 o C/W • Device mounted on a PCB area of 1 cm . 2 ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions I CES Collector Cut-off Current (V BE = 0) V CE = 140 V I CEO Collector Cut-off Current (I B = 0) V CE = 80 V I EBO Emitter Cut-off Current (I C = 0) V EB = 5 V V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0) I C = 10 mA Min. Typ. Max. Unit 500 µA 1 mA 100 µA 80 V V CE(sat) ∗ Collector-Emitter Saturation Voltage I C = 100 mA IC = 1 A I B = 10 mA I B = 100 mA 0.25 0.5 V V V BE(sat) ∗ Base-Emitter Saturation Voltage I C = 100 mA IC = 1 A I B = 10 mA I B = 100 mA 1 1.1 V V DC Current Gain I C = 100 mA I C = 500 mA IC = 1 A V CE = 2 V V CE = 2 V V CE = 2 V Transition Frequency I C = 0.1 A V CE = 10 V h FE ∗ fT ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 2/5 140 80 40 50 MHz STF715 - STN715 SOT-223 MECHANICAL DATA mm DIM. MIN. TYP. A inch MAX. MIN. TYP. 1.80 MAX. 0.071 B 0.60 0.70 0.80 0.024 0.027 0.031 B1 2.90 3.00 3.10 0.114 0.118 0.122 c 0.24 0.26 0.32 0.009 0.010 0.013 D 6.30 6.50 6.70 0.248 0.256 0.264 e 2.30 0.090 e1 4.60 0.181 E 3.30 3.50 3.70 0.130 0.138 0.146 H 6.70 7.00 7.30 0.264 0.276 0.287 10o V A1 10o 0.02 P008B 3/5 STF715 - STN715 SOT-89 MECHANICAL DATA mm DIM. MIN. TYP. mils MAX. MIN. TYP. MAX. A 1.4 1.6 55.1 63.0 B 0.44 0.56 17.3 22.0 B1 0.36 0.48 14.2 18.9 C 0.35 0.44 13.8 17.3 C1 0.35 0.44 13.8 17.3 D 4.4 4.6 173.2 181.1 D1 1.62 1.83 63.8 72.0 E 2.29 2.6 90.2 102.4 e 1.42 1.57 55.9 61.8 e1 2.92 3.07 115.0 120.9 H 3.94 4.25 155.1 167.3 L 0.89 1.2 35.0 47.2 P025H 4/5 STF715 - STN715 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2002 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 5/5