STN83003

STN83003 High voltage fast-switching NPN power transistor General features ■ ■ ■ ■ ■ Medium voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed SOT-223 plastic package for surface mounting circuits Tape and reel packing 1 2 2 3 ■ SOT-223 Applications ■ ■ Electronics ballasts for fluorescent lighting Switch mode power supplies Internal schematic diagrams Description The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The STN83003 is expressly designed for a new solution to be used in compact fluorescent lamps, where it is coupled with the STN93003, its complementary PNP transistor. Order codes Part Number STN83003 Marking N83003 Package SOT-223 Packing Tape & reel January 2007 Rev 2 1/11 www.st.com 11 STN83003 Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 2.2 Electrical characteristics (curves) ........................... 5 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 3 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 2/11 STN83003 1 Electrical ratings Table 1. Symbol VCES VCEO VEBO IC ICM IB IBM Ptot Tstg TJ Absolute maximum rating Parameter Collector-emitter voltage (V BE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0, IB = 0.75A, tp < 10µs, T j < 150°C) Collector current Collector peak current (tP < 5ms) Base current Base peak current (tP < 5ms) Total dissipation at T c = 25°C Storage temperature Max. operating junction temperature Value 700 400 V(BR)EBO 1.5 3 0.75 1.5 1.6 -65 to 150 150 Unit V V V A A A A W °C °C Table 2. Symbol Rthj-amb 1. Thermal data Parameter Thermal resistance junction-ambient (1) cm 2. Value _max 78 Unit °C/W Device mounted on PCB area of 1 3/11 Electrical characteristics STN83003 2 Electrical characteristics (Tcase = 25°C unless otherwise specified) Table 3. Symbol ICEV Electrical characteristics Parameter Test Conditions Min. Typ. Max. Unit 1 5 12 18 mA mA V Collector cut-off current VCE = 700V (VBE = -1.5V) VCE = 700V Emitter-base breakdown voltage (IC = 0) Collector-emitter sustaining voltage (IB = 0) Collector-emitter saturation voltage IE = 10mA T j = 125°C V(BR)EBO VCE(sus) (1) IC = 10mA L = 25mH IC = 0.35A IC = 0.5A IB = 50mA IB = 0.1A IB = 0.1A VCE = 5V VCE = 5V VCE = 5V VCC = 125V (see figure 10) IB1 = 0.1A L = 10mH (see figure 9) 400 1 0.5 1 10 16 4 25 32 V V V V VCE(sat) (1) VBE(sat) (1) Base-emitter saturation IC = 0.5A voltage IC = 10mA IC = 0.35A I C = 1A Resistive load hFE DC current gain tr ts tf ts tf Rise time Storage time Fall time Inductive load Storage time Fall time IC = 0.35A IB1 = -IB2 = 70mA TP ≥ 25µ s IC = 0.5A VBE(off) = -5V VClamp = 300V 100 1.5 2.2 0.2 2.9 ns µs µs 450 90 ns ns 1. Pulsed duration = 300 µs, duty cycle ≤1.5% 4/11 STN83003 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 2. DC Current Gain Figure 3. DC Current Gain Figure 4. Collector-emitter saturation voltage Figure 5. Base-emitter saturation voltage Figure 6. Resistive load storage time 5/11 Electrical characteristics STN83003 Figure 7. Resistive load storage time Figure 8. Inductive load storage time Figure 9. Inductive load fall time 6/11 STN83003 2.2 Test circuits Figure 10. Inductive load switching test circuit 1) Fast Electronic Switching 2) Non-inductive Resisitor 3) Fast recovery rectifier Figure 11. Resistive load switching test circuit 1) Fast Electronic Switching 2) Non-inductive Resisitor 7/11 Package mechanical data STN83003 3 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 8/11 STN83003 SOT-223 MECHANICAL DATA mm MIN. A B B1 c D e e1 E H V A1 0.02 3.30 6.70 0.60 2.90 0.24 6.30 0.70 3.00 0.26 6.50 2.30 4.60 3.50 7.00 3.70 7.30 10o 0.130 0.264 TYP. MAX. 1.80 0.80 3.10 0.32 6.70 0.024 0.114 0.009 0.248 0.027 0.118 0.010 0.256 0.090 0.181 0.138 0.276 0.146 0.287 10o MIN. inch TYP. MAX. 0.071 0.031 0.122 0.013 0.264 DIM. P008B 9/11 Revision history STN83003 4 Revision history Table 4. Date 09-May-2006 17-Jan-2007 Revision history Revision 1 2 Initial release. The device’s safe operating area curve has been added on page 5. Changes 10/11 STN83003 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. 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