STN888

STN888 HIGH CURRENT, HIGH PERFORMANCE, LOW VOLTAGE PNP TRANSISTOR Features ■ VERY LOW COLLECTOR TO EMITTER SATURATION VOLTAGE ■ D.C. CURRENT GAING, hFE > 100 ■ 5 A CONTINUOUS COLLECTOR CURRENT ■ SOT-223 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS ■ AVAILABLE IN TAPE & REEL PACKING ■ IN COMPLIANCE WITH THE 2002/93/EC EUROPEAN DIRECTIVE POWER MANAGEMENT IN PORTABLE EQUIPMENT ■ VOLTAGE REGULATION IN BIAS SUPPLY CIRCUITS ■ SWITCHING REGULATOR IN BATTERY CHARGER APPLICATIONS ■ HEAVY LOAD DRIVER ) (s Description 3 u d o 1 2 r P e SOT-223 t e l o Applications ■ ) s ( ct 2 s b O Internal Schematic Diagram t c u d o r P e t e l o The device is manufactured in low voltage PNP Planar Technology by using a “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. s b O Order Codes Part Number Marking Package Packing STN888 N888 SOT-223 Tape & Reel August 2005 rev.2 1/9 www.st.com 9 STN888 1 Absolute Maximum Ratings 1 Absolute Maximum Ratings Table 1. Absolute Maximum Rating Symbol Parameter Unit VCBO Collector-Base Voltage (IE = 0) -45 V VCEO Collector-Emitter Voltage (IB = 0) -30 V VEBO Emitter-Base Voltage (IC = 0) -6 V Collector Current -5 A Collector Peak Current (tP < 5ms) -10 A Total dissipation at Tc = 25°C 1.6 IC ICM PTOT Tstg Storage Temperature TJ Max. Operating Junction Temperature Table 2. 150 Thermal Data ete Parameter Rthj-amb Thermal Resistance Junction-Ambient__________________Max ol ) (s t c u d o r P e t e l o s b O ) s ( t c u d -65 to 150 Symbol 2/9 Value s b O o r P W °C °C Value Unit 78 °C/W STN888 2 2 Electrical Characteristics Electrical Characteristics (TCASE = 25°C; unless otherwise specified) Electrical Characteristics Table 3. Symbol Parameter Test Conditions ICBO Collector Cut-off Current (IE = 0) IEBO Emitter Cut-off Current (IC = 0) V(BR)CBO Collector-Base Breakdown Voltage (IE = 0) IC = -100μA V(BR)EBO Emitter-Base Breakdown Voltage (IC = 0) IE = -100μA Collector-Emitter Saturation Voltage e t e l o s b Note: 1 O td tr ts tf t c u od hFE DC Current Gain INDUCTIVE LOAD Delay Time Rise Time Storage Time Fall Time μA μA -10 μA V u d o r P e -6 t e l o IB = -5mA s b O IB = -50mA IC = -5A_____ IB = -250mA IC = -6A_ ) s ( ct -45 IC = -2A_____ ) (s Base-Emitter Saturation Voltage Pr -10 -100 -30 ____ IB = -250mA IC = -8A _____ Note: 1 Unit ____TC = 100°C IC = -500mA_____ VBE(sat) Max. VEB = -6V IC = -10mA Note: 1 Typ. VCB = -30V VCB = -30V V(BR)CEO Collector-Emitter Note: 1 Breakdown Voltage (IB = 0) VCE(sat) Min. IC = -10A ___ IB = -400mA __ IB = -500mA IC = -2A ____ IB = -50mA IC = -6A ____ IB = -250mA -0.7 -1.0 -1.2 -1.1 -1.2 VCE = -1 V 120 200 IC = -500mA VCE = -1 V 100 200 IC = -5 A VCE = -1 V 70 100 IC = -5 A VCE = -1 V tj = 100°C IC = -8 A VCE = -1 V 55 IC = -10 A VCE = -1 V 35 IC = -3A ____ _ (see Figure 7) VCC = -20V V -0.15 -0.35 -0.70 IC = -10mA IB1 = -IB2 =-60mA V V V V V V V V V 300 100 180 160 250 80 220 210 300 100 ns ns ns ns Note: 1 Pulsed duration = 300 μs, duty cycle ≤1.5%. 3/9 STN888 2 Electrical Characteristics 2.1 Typical Characteristics Figure 1. DC Current Gain Figure 2. DC Current Gain ) s ( ct Figure 3. Collector-Emitter Saturation Voltage Figure 4. u d o r P e Base-Emitter Saturation Voltage t e l o ) (s s b O t c u d o r o s b O 4/9 P e let Figure 5. Switching Times Resistive Load Figure 6. Switching Times Resistive Load STN888 3 3 Test Circuits Test Circuits Figure 7. Resistive Load Switching Test Circuit ) s ( ct u d o r P e t e l o 1) Fast Electronic Switching 2) Non-inductive Resisitor ) (s s b O t c u d o r P e t e l o s b O 5/9 STN888 4 Package Mechanical Data 4 Package Mechanical Data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com ) s ( ct u d o r P e t e l o ) (s t c u d o r P e t e l o s b O 6/9 s b O STN888 4 Package Mechanical Data SOT-223 MECHANICAL DATA mm DIM. MIN. TYP. inch A MAX. MIN. TYP. 1.80 MAX. 0.071 ) s ( ct B 0.60 0.70 0.80 0.024 0.027 0.031 B1 2.90 3.00 3.10 0.114 0.118 0.122 c 0.24 0.26 0.32 0.009 0.010 0.013 D 6.30 6.50 6.70 0.248 0.256 e 2.30 e1 4.60 0.090 E 3.30 3.50 3.70 H 6.70 7.00 7.30 V 10 A1 r P e t e l o 0.130 bs o 0.264 u d o 0.264 0.181 0.138 0.146 0.276 0.287 10o O ) 0.02 s ( t c u d o r P e t e l o s b O P008B 7/9 STN888 5 Revision History 5 Revision History Date Revision 03-Aug-2005 1 Changes Initial release. ) s ( ct u d o r P e t e l o ) (s t c u d o r P e t e l o s b O 8/9 s b O STN888 5 Revision History ) s ( ct u d o r P e t e l o ) (s s b O t c u d o r P e t e l o s b O Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners © 2005 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 9/9