STP08IE120F4

STP08IE120F4 Emitter Switched Bipolar Transistor ESBT 1200 V - 8 A - 0.10 Ω General features VCS(ON) 0.8 V ■ IC 8A RCS(ON) High voltage / high current Cascode configuration Low equivalent on resistance very fast-switch up to 150 kHz Squared RBSOA up to 1200V Very low Ciss driven by RG = 47Ω Very low turn-off cross over time ■ ■ ■ ■ ■ Applications ■ Aux SMPS for three phase mains Description The STP08IE120F4 is manufactured in Monolithic ESBT Technology, aimed to provide best performances in high frequency / high voltage applications. It is designed for use in Gate Driven based topologies. Order codes Part Number STP08IE120F4 Marking P08IE120F4 Package TO220FP-4L Packing Tube November 2006 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. W 0.10 Internal schematic diagrams Rev 1 ® Preliminary Data TO220FP-4L 1/11 www.st.com 11 STP08IE120F4 Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 2.2 Electrical characteristics (curves) ........................... 5 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 3 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 2/11 STP08IE120F4 Electrical ratings 1 Electrical ratings Table 1. Symbol VCS(SS) VBS(OS) VSB(OS) VGS IC ICM IB IBM Ptot Tstg TJ Absolute maximum rating Parameter Collector-source voltage (V BS = VGS = 0 V) Base-source voltage (IC = 0, V GS = 0 V) Source-base voltage (IC = 0, V GS = 0 V) Gate-source voltage Collector current Collector peak current (tP < 5ms) Base current Base peak current (tP < 5ms) Total dissipation at T c = 25°C Storage temperature Max. operating junction temperature Value 1200 30 17 Unit V V V V A A A A W °C °C ± 17 8 24 6 12 21 -40 to 150 150 Table 2. Symbol Rthj-case Thermal data Parameter Thermal resistance junction-case __max Value 6 Unit °C/W 3/11 Electrical characteristics STP08IE120F4 2 Electrical characteristics (Tcase = 25°C unless otherwise specified) Table 3. Symbol ICS(SS) IBS(OS) ISB(OS) IGS(OS) Electrical characteristics Parameter Collector-source current (VBS = V GS = 0) Base-source current (IC = 0, VGS = 0) Source-base current (IC = 0, VGS = 0) Gate-source leakage Collector-source ON voltage DC current gain Test Conditions VCE = 1200V VBS(OS) = 30V VSB(OS) = 17V VGS = ± 17V VGS = 10V _IC = 8A VGS = 10V_ IC = 4A VGS = 10V_ IC = 8A VGS = 10V_ IC = 4A_ VGS = 10V_ IC = 8A IB = 1.6A IB = 0.4A VCS = 1V VCS = 1V IB = 1.6A 5 7 1.5 1.5 2 3 550 26 670 15 4 V V V pF nC ns ns 0.8 0.5 Min. Typ. Max. Unit 100 10 100 100 1 1.2 µA µA µA nA V V VCS(ON) hFE VBS(ON) VGS(th) CISS QGS(tot) ts tf Base Source ON voltage Gate threshold voltage Input capacitance Gate-source charge INDUCTIVE LOAD Storage time Fall time INDUCTIVE LOAD Storage time Fall time Maximum collectorsource voltage switched without snubber Collector-source dynamic voltage (500ns) Collector-source dynamic voltage VGS = 10V_ IC = 4A_ IB = 0.4A VBS = VGS ______IB = 250µA VCS = 25V ______f = 1MHz VGS = 0 VGS = 10V IC = 4A tp = 4µs IB = 0.4A VGS = 10V VClamp = 960V RG = 47Ω tp = 4µs IC = 4A IB = 0.8A VGS = 10V VClamp = 960V RG = 47Ω ts tf 340 10.2 ns ns VCSW R G = 47 Ω hFE = 5A IC = 8A 1200 V VCS(dyn) VCC = VClamp = 400V V GS = 10V RG = 47Ω IC = 4A IB = 0.8A IBpeak = 4A tpeak = 500ns VCC = VClamp = 400V V GS = 10V RG = 47Ω IC = 4A IB = 0.8A IBpeak = 4A tpeak = 500ns 5.75 V VCS(dyn) 3.35 V (1 µs) 4/11 STP08IE120F4 Electrical characteristics 2.1 Electrical characteristics (curves) Figure 1. Output characteristics Figure 2. DC current gain Figure 3. Collector-source On voltage Figure 4. Collector-source On voltage Figure 5. Base-source On voltage Figure 6. Base-source On voltage 5/11 Electrical characteristics STP08IE120F4 Figure 7. Reverse biased safe operting Figure 8. area Gate threshold voltage vs temperature Figure 9. Dynamic collector-emitter saturation voltage Figure 10. Inductive load switching time Figure 11. Inductive load switching time 6/11 STP08IE120F4 Electrical characteristics 2.2 Test circuits Figure 12. Inductive load switching and RBSOA test circuit 7/11 Package mechanical data STP08IE120F4 3 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 8/11 STP08IE120F4 Package mechanical data TO220FP-4L MECHANICAL DATA DIM. A A1 A2 b b1 b2 b3 b4 c D E e e1 H1 L L1 L2 Dia P Q mm. TYP MIN. 4.30 2.60 1.30 0.50 1.05 1.25 0.45 15.50 9.80 2.29 6.30 1.50 MAX. 4.70 3 1.70 0.70 1.3 1.50 0.60 15.90 10.20 2.79 6.70 0.50 2.54 7.62 13.60 3.30 15.40 3 3.30 15.80 3.40 3.50 7514291B 9/11 Revision history STP08IE120F4 4 Revision history Table 4. Date 28-Nov-2006 Revision history Revision 1 Initial release. Changes 10/11 STP08IE120F4 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. 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