STP100N8F6

STP100N8F6 N-channel 80 V, 0.008 Ω typ., 100 A, STripFET™ F6 Power MOSFET in a TO-220 package Datasheet - production data Features Order code VDS RDS(on)max. ID PTOT STP100N8F6 80 V 0.009 Ω 100 A 176 W     Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Applications  Figure 1: Internal schematic diagram Switching applications Description This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Table 1: Device summary Order code Marking Package Packing STP100N8F6 100N8F6 TO-220 Tube February 2016 DocID026838 Rev 3 This is information on a product in full production. 1/15 www.st.com Contents STP100N8F6 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 5 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 5 2/15 4.1 TO-220 type A package information ................................................ 10 4.2 TO-220 type H package information ............................................... 12 Revision history ............................................................................ 14 DocID026838 Rev 3 STP100N8F6 1 Electrical ratings Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 80 V VGS Gate-source voltage ±20 V ID Drain current (continuous) at TC = 25 °C 100 A ID Drain current (continuous) at TC = 100 °C 70 A IDM(1) Drain current (pulsed) 400 A PTOT Total dissipation at TC = 25 °C 176 W EAS(2) Single pulse avalanche energy 170 mJ TJ Operating junction temperature range Tstg Storage temperature range -55 to 175 °C °C Notes: (1)Pulse width is limited by safe operating area. (2)Starting Tj = 25 °C, Id = 25 A, Vdd = 40 V. Table 3: Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case max. 0.85 °C/W Rthj-amb Thermal resistance junction-ambient max. 62.5 °C/W DocID026838 Rev 3 3/15 Electrical characteristics 2 STP100N8F6 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 4: On /off-states Symbol Parameter Test conditions V(BR)DSS Drain-source breakdown voltage IDSS Zero-gate voltage drain current IGSS VGS = 0, ID = 250 µA Min. Typ. Max. 80 Unit V VGS = 0, VDS = 80 V 1 µA VGS = 0, VDS = 80 V, TC = 125 °C 100 µA Gate-body leakage current VDS = 0, VGS = ± 20 V 100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 4 V RDS(on) Static drain-source on- resistance VGS = 10 V, ID = 50 A 0.008 0.009 Ω Min. Typ. Max. Unit - 5955 - pF - 244 - pF - 160 - pF - 100 - nC - 30 - nC - 25 - nC Test conditions Min. Typ. Max. Unit VDD = 40 V, ID = 50 A, RG = 4.7 Ω, VGS = 10 V (see Figure 13: "Test circuit for resistive load switching times" and Figure 18: "Switching time waveform" ) - 33 - ns - 46 - ns - 103 - ns - 21 - ns 2 Table 5: Dynamic Symbol Parameter Test conditions Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge VGS = 0, VDS = 25 V, f = 1 MHz VDD = 40 V, ID = 100 A, VGS = 10 V (see Figure 14: "Test circuit for gate charge behavior" ) Table 6: Switching times Symbol td(on) tr td(off) tf 4/15 Parameter Turn-on delay time Rise time Turn-off delay time Fall time DocID026838 Rev 3 STP100N8F6 Electrical characteristics Table 7: Source-drain diode Symbol VSD(1) Parameter Test conditions Forward on voltage VGS = 0, ISD = 100 A trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current ISD = 100 A, di/dt = 100 A/µs VDD = 64 V (see Figure 15: "Test circuit for inductive load switching and diode recovery times") Min. Typ. - Max. Unit 1.2 V - 38 ns - 63 nC - 3.3 A Notes: (1)Pulsed: pulse duration = 300 µs, duty cycle 1.5%. DocID026838 Rev 3 5/15 Electrical characteristics 2.1 STP100N8F6 Electrical characteristics (curves) Figure 2: Safe operating area Figure 3: Thermal impedance Figure 4: Output characteristics Figure 5: Transfer characteristics Figure 6: Normalized gate threshold voltage vs. temperature 6/15 DocID026838 Rev 3 Figure 7: Normalized V(BR)DSS vs. temperature STP100N8F6 Electrical characteristics Figure 8: Static drain-source on-resistance Figure 9: Normalized on-resistance vs. temperature Figure 10: Gate charge vs. gate-source voltage Figure 11: Capacitance variations Figure 12: Source-drain diode forward characteristics DocID026838 Rev 3 7/15 Test circuits 3 STP100N8F6 Test circuits Figure 13: Test circuit for resistive load switching times Figure 14: Test circuit for gate charge behavior Figure 15: Test circuit for inductive load switching and diode recovery times Figure 16: Unclamped inductive load test circuit Figure 17: Unclamped inductive waveform 8/15 DocID026838 Rev 3 Figure 18: Switching time waveform STP100N8F6 4 Package information Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. DocID026838 Rev 3 9/15 Package information 4.1 STP100N8F6 TO-220 type A package information Figure 19: TO-220 type A package outline 10/15 DocID026838 Rev 3 STP100N8F6 Package information Table 8: TO-220 type A mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 øP 3.75 3.85 Q 2.65 2.95 DocID026838 Rev 3 11/15 Package information 4.2 STP100N8F6 TO-220 type H package information Figure 20: TO-220 type H package outline 12/15 DocID026838 Rev 3 STP100N8F6 Package information Table 9: TO-220 type H package mechanical data mm Dim. Min. Typ. Max. A 4.40 4.45 4.50 A1 1.22 A2 2.49 2.59 2.69 A3 b 1.17 1.27 1.37 0.78 0.87 b2 1.25 1.34 b4 1.20 1.29 1.32 b6 1.50 b7 1.45 c 0.49 0.56 D 15.40 15.50 15.60 D1 9.05 9.15 9.25 E 10.08 10.18 10.28 e 2.44 2.54 2.64 e1 4.98 5.08 5.18 H1 6.25 6.35 6.45 L 13.20 13.40 13.60 L1 3.50 3.70 3.90 L2 16.30 16.40 16.50 L3 28.70 28.90 29.10 ∅P 3.75 3.80 3.85 Q 2.70 2.80 2.90 DocID026838 Rev 3 13/15 Revision history 5 STP100N8F6 Revision history Table 10: Document revision history 14/15 Date Revision Changes 02-Sep-2014 1 Initial release. 02-Dec-2014 2 Document status promoted from preliminary to production data. Added the section of electrical characteristics (curves). Minor text changes. 08-Feb-2016 3 Added Section 4.2: "TO-220 type H package information". DocID026838 Rev 3 STP100N8F6 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2016 STMicroelectronics – All rights reserved DocID026838 Rev 3 15/15