STP10N105K5

STF10N105K5, STP10N105K5, STW10N105K5 N-channel 1050 V, 1 Ω typ., 6 A MDmesh™ K5 Power MOSFETs in TO-220, TO-220FP and TO-247 packages Datasheet - production data Features TAB Order codes 3 1 1 2 2 1 2 RDS(on) max. ID PTOT STF10N105K5 3 30 W STP10N105K5 TO-220 TO-220FP VDS 1050 V 1.3 Ω 6A STW10N105K5      3 TO-247 130 W 130 W Industry’s lowest RDS(on) Industry’s best figure of merit (FoM) Ultra low gate charge 100% avalanche tested Zener-protected Figure 1: Internal schematic diagram Applications D(2, TAB)  Switching applications Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. G(1) Table 1: Device summary S(3) AM01476v1 October 2014 Order codes Marking Package Packaging STF10N105K5 10N105K5 TO-220FP Tube STP10N105K5 10N105K5 TO-220 Tube STW10N105K5 10N105K5 TO-247 Tube DocID026932 Rev 2 This is information on a product in full production. 1/18 www.st.com Contents STF10N105K5, STP10N105K5, STW10N105K5 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 9 4 Package mechanical data ............................................................. 10 5 2/18 4.1 TO-220 package mechanical data .................................................. 11 4.2 TO-247 package mechanical data .................................................. 13 4.3 TO-220FP package mechanical data .............................................. 15 Revision history ............................................................................ 17 DocID026932 Rev 2 STF10N105K5, STP10N105K5, STW10N105K5 1 Electrical ratings Electrical ratings Table 2: Absolute maximum ratings Value Symbol Parameter Unit TO-220 VGS TO-247 TO-220FP Gate- source voltage 30 V ID Drain current (continuous) at TC = 25 °C 6 A ID Drain current (continuous) at TC = 100 °C 3.78 A 24 A (1) IDM Drain current (pulsed) PTOT Total dissipation at TC = 25 °C IAR Max. current during repetitive or single pulse avalanche EAS 130 30 W 2 A Single pulse avalanche energy (starting TJ = 25 °C, ID = IAS, VDD = 50 V) 140 mJ dv/dt (2) Peak diode recovery voltage slope 4.5 V/ns dv/dt (3) MOSFET dv/dt ruggedness 50 V/ns VISO Insulation withstand voltage (RMS) from all three leads to external heatsink (t = 1 s; TC = 25 ° C) Tj Tstg Operating junction temperature Storage temperature 2500 -55 to 150 V °C Notes: (1) Pulse width limited by safe operating area. (2) ISD ≤ 6 A, di/dt ≤ 100 A/µs, Vpeak ≤ V(BR)DSS. (3) VSD ≤ 840. Table 3: Thermal data Value Symbol Parameter Unit TO-220 Rthj-case Rthj-amb Thermal resistance junction-case max. TO-247 0.96 Thermal resistance junction-case max. Thermal resistance junction-ambient max. DocID026932 Rev 2 TO-220FP 4.2 62.50 °C/W °C/W 3/18 Electrical characteristics 2 STF10N105K5, STP10N105K5, STW10N105K5 Electrical characteristics (Tcase = 25 °C unless otherwise specified) Table 4: On /off states Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage Min. ID = 1 mA, VGS = 0 Typ. Max. 1050 Unit V VDS = 1050 V 1 µA VDS = 1050 V, TC = 125 °C 50 µA Gate-body leakage current VGS = ± 20 V; VDS = 0 10 µA VGS(th) Gate threshold voltage VDS = VGS, ID = 100 µA 4 5 V RDS(on) Static drain-source on- resistance VGS = 10 V, ID = 3 A 1 1.3 Ω Typ. Max. Unit IDSS Zero gate voltage, drain current (VGS = 0) IGSS 3 Table 5: Dynamic Symbol Parameter Test conditions Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance (1) Co(tr) (2) Co(er) VDS =100 V, f = 1 MHz, VGS = 0 Equivalent capacitance time related Equivalent capacitance energy related RG Intrinsic gate resistance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Min. VGS = 0, VDS = 0 to 840 V 545 pF 30 pF 1.3 pF 65 pF 22 - f = 1 MHz open drain VDD = 840 V, ID = 6 A VGS =10 V - pF 7 Ω 21.5 nC 3.3 nC 15.5 nC Notes: (1) Time related is defined as a constant equivalent capacitance giving the same charging time as C oss when VDS increases from 0 to 80% VDSS. (2) Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS increases from 0 to 80% VDSS. Table 6: Switching times Symbol td(on) tr td(off) tf 4/18 Parameter Test conditions Min. Turn-on delay time Rise time Turn-off-delay time Typ. Max. 19 VDD = 525 V, ID = 3 A, RG = 4.7 Ω, VGS = 10 V Fall time - 8 50 21.5 DocID026932 Rev 2 Unit ns - ns ns ns STF10N105K5, STP10N105K5, STW10N105K5 Electrical characteristics Table 7: Source-drain diode Symbol ISD Parameter Test conditions ISDM Source-drain current (pulsed) VSD (2) Forward on voltage ISD = 6 A, VGS = 0 Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current trr Typ. Source-drain current (1) trr Min. ISD = 6 A, di/dt = 100 A/µs VDD = 60 V - Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current ISD = 6 A, di/dt = 100 A/µs VDD = 60 V TJ = 150 °C Max. Unit 6 A 24 A 1.5 V 345 ns 3.53 µC 20.5 A 540 ns 5.05 µC 18.5 A Notes: (1) (2) Pulse width limited by safe operating area. Pulsed: pulse duration = 300 µs, duty cycle 1.5%. Table 8: Gate-source Zener diode Symbol V(BR)GSO Parameter Gate-source breakdown voltage Test conditions IGS = ± 1 mA, ID = 0 Min. Typ. Max. Unit 30 - - V The built-in back-to-back Zener diodes have been specifically designed to enhance the ESD capability of the device. The Zener voltage is appropriate for efficient and costeffective intervention to protect the device integrity. These integrated Zener diodes thus eliminate the need for external components. DocID026932 Rev 2 5/18 Electrical characteristics 2.1 STF10N105K5, STP10N105K5, STW10N105K5 Electrical characteristics (curves) Figure 3: Thermal impedance TO-220 Figure 2: Safe operating area for TO-220 K GIPG150920141258LM ID (A) GIPG150920141341LM δ=0.5 0.2 10 DS (o Op Lim erat ite ion d b in y m this ax are R a n) is 0.1 1 0.05 100µs 10 -1 1ms 0.02 0.01 10ms Single pulse 0.1 Tj=150°C Tc=25°C Single pulse 0.01 0.1 1 10 100 1000 -2 10 -5 10 V DS(V) Figure 4: Safe operating area for TO-220FP -4 10 -3 10 -2 tp(s) 10 -1 Figure 5: Thermal impedance TO-220FP GIPG160920140929LM ID (A) 10 GIPG160920141014LM K δ=0.5 0.2 0.1 n) (o 0.05 DS Op Lim era ite tion d b in y m thi ax s ar R e ai s 10 1 100µs 10 -1 0.02 1ms 0.01 10ms 0.1 Single pulse Tj=150°C Tc=25°C Single pulse 0.01 0.1 1 10 100 1000 V DS(V) Figure 6: Safe operating area for TO-247 GIPG160920141037LM ID (A) 10 -2 -4 10 10 -3 10 -2 10 0 10 -1 tp(s) Figure 7: Thermal impedance TO-247 GIPG160920141054LM K δ=0.5 0.2 0.1 (o n ) 0.05 DS Op Lim erat ite ion d b in y m this a ax R re ai s 10 1 100µs 1ms 10 0.02 -1 0.01 10ms 0.1 0.01 0.1 6/18 Single pulse Tj=150°C Tc=25°C Single pulse 1 10 100 1000 V DS(V) DocID026932 Rev 2 10 -2 10-5 10 -4 10 -3 10 -2 10 -1 tp(s) STF10N105K5, STP10N105K5, STW10N105K5 Electrical characteristics Figure 9: Transfer characteristics Figure 8: Output characteristics GIPG160920141136LM ID (A) GIPG160920141123LM ID(A) 14 V DS=20V 14 V GS=9,10, 11V 12 12 10 10 8V 8 8 6 6 4 4 7V 2 2 6V 0 0 5 10 20 15 V DS(V) 0 6 5 Figure 10: Gate charge vs gate-source voltage R DS(on) (Ω) 1.60 V DS (V) 800 V DD= 840 V ID= 6 A 12 500 6 400 10 V GS(V) GIPG160920141211LM V GS=10V 1.40 600 8 9 1.50 700 10 8 Figure 11: Static drain-source on-resistance GIPG160920141152LM V GS (V) 7 1.30 1.20 1.10 300 4 200 1.00 100 0.90 0 Q g(nC) 0.80 2 0 0 5 10 15 20 0 4 6 8 10 12 14 ID(A) Figure 13: Normalized gate threshold voltage vs temperature Figure 12: Capacitance variation GIPG160920141238LM C (pF) 2 GIPG160920141251LM V GS(th) (norm) ID=100µ A 1.2 1 1000 Ciss 0.8 100 0.6 Coss 0.4 Crss 0.2 10 1 0.1 1 10 100 1000 V DS(V) DocID026932 Rev 2 0 -100 -50 0 50 100 150 T J(°C) 7/18 Electrical characteristics STF10N105K5, STP10N105K5, STW10N105K5 Figure 15: Source-drain diode forward characteristics Figure 14: Normalized on-resistance vs temperature GIPG160920141313LM GIPG160920141301LM R DS(on) (norm) V SD(V) V GS=10V ID= 6 A 2.5 1 T J=-50°C 2 0.9 1.5 0.8 1 0.7 T J=25°C T J=150°C 0.5 0.6 0 -100 -50 0 50 100 150 0.5 T J(°C) Figure 16: Normalized VBR(DSS) vs temperature 1 ID=1m A 1.1 3 4 5 6 ISD(A) Figure 17: Maximum avalanche energy vs starting Tj GIPG160920141321LM V (BR)DSS (norm) 2 GIPG160920141328LM E AS (mJ) 140 120 1.05 100 80 1 60 0.95 40 0.90 0.85 -100 8/18 20 -50 0 50 100 150 T J(°C) DocID026932 Rev 2 0 0 20 40 60 80 100 120 140 T J(°C) STF10N105K5, STP10N105K5, STW10N105K5 3 Test circuits Test circuits Figure 18: Switching times test circuit for resistive load Figure 19: Gate charge test circuit Figure 20: Test circuit for inductive load switching and diode recovery times Figure 21: Unclamped inductive load test circuit Figure 22: Unclamped inductive waveform DocID026932 Rev 2 Figure 23: Switching time waveform 9/18 Package mechanical data 4 STF10N105K5, STP10N105K5, STW10N105K5 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ® ECOPACK is an ST trademark. 10/18 DocID026932 Rev 2 STF10N105K5, STP10N105K5, STW10N105K5 4.1 Package mechanical data TO-220 package mechanical data Figure 24: TO-220 type A drawings 0015988_typeA_Rev_T DocID026932 Rev 2 11/18 Package mechanical data STF10N105K5, STP10N105K5, STW10N105K5 Table 9: TO-220 type A mechanical data mm Dim. Min. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 12/18 Typ. 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 øP 3.75 3.85 Q 2.65 2.95 DocID026932 Rev 2 STF10N105K5, STP10N105K5, STW10N105K5 4.2 Package mechanical data TO-247 package mechanical data Figure 25: TO-247 drawings DocID026932 Rev 2 13/18 Package mechanical data STF10N105K5, STP10N105K5, STW10N105K5 Table 10: TO-247 mechanical data mm Dim. Min. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 L 14.20 14.80 L1 3.70 4.30 L2 14/18 Typ. 5.45 5.60 18.50 øP 3.55 3.65 øR 4.50 5.50 S 5.30 DocID026932 Rev 2 5.50 5.70 STF10N105K5, STP10N105K5, STW10N105K5 4.3 Package mechanical data TO-220FP package mechanical data Figure 26: TO-220FP drawings 7012510_Rev_K_B DocID026932 Rev 2 15/18 Package mechanical data STF10N105K5, STP10N105K5, STW10N105K5 Table 11: TO-220FP mechanical data mm Dim. Min. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 16/18 Typ. 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Ø 3 3.2 DocID026932 Rev 2 STF10N105K5, STP10N105K5, STW10N105K5 5 Revision history Revision history Table 12: Document revision history Date Revision Changes 07-Oct-2014 1 First release. 14-Oct-2014 2 Document status promoted from preliminary to production data. DocID026932 Rev 2 17/18 STF10N105K5, STP10N105K5, STW10N105K5 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2014 STMicroelectronics – All rights reserved 18/18 DocID026932 Rev 2