STP110N55F6
N-channel 55 V, 4.5 Ω typ., 110 A STripFET™ F6
Power MOSFET in a TO-220 package
Datasheet - production data
Features
TAB
Order code
VDS
RDS(on) max.
ID
STP110N55F6
55 V
5.2 mΩ
110 A
• Low gate charge
• Very low on-resistance
3
1
2
• High avalanche ruggedness
TO-220
Applications
• Switching applications
Figure 1. Internal schematic diagram
Description
This device is an N-channel Power MOSFET
developed using the STripFET™ F6 technology,
with a new trench gate structure. The resulting
Power MOSFET exhibits a very low RDS(on) in all
packages.
'7$%
*
6
$0Y
Table 1. Device summary
Order code
Marking
Packages
Packaging
STP110N55F6
110N55F6
TO-220
Tube
July 2014
This is information on a product in full production.
DocID019059 Rev 2
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www.st.com
Contents
STP110N55F6
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................ 6
3
Test circuits
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
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.............................................. 8
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STP110N55F6
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage
55
V
VGS
Gate-source voltage
± 20
V
ID
Drain current (continuous) at TC = 25 °C
110
A
ID
Drain current (continuous) at TC = 100 °C
85
A
Drain current (pulsed)
440
A
Total dissipation at TC = 25 °C
150
W
1
W/°C
- 55 to 175
°C
Value
Unit
1
°C/W
62.5
°C/W
IDM
(1)
PTOT
Derating factor
Tstg
Tj
Storage temperature
Operating junction temperature
1. Current limited by package.
Table 3. Thermal data
Symbol
Parameter
Rthj-case
Thermal resistance junction-case max
Rthj-amb
Thermal resistance junction-ambient max
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Electrical characteristics
2
STP110N55F6
Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 4. On/off states
Symbol
V(BR)DSS
Parameter
Test conditions
Drain-source breakdown
voltage
VGS = 0, ID = 250 µA
Min.
Typ.
Max.
55
Unit
V
VGS = 0, VDS = 55 V
1
µA
VGS = 0, VDS = 55 V,
TC=125 °C
100
µA
100
nA
4
V
4.5
5.2
mΩ
Min.
Typ.
Max.
Unit
-
7390
-
pF
-
504
-
pF
-
355
-
pF
-
126
-
nC
-
32
-
nC
-
38
-
nC
Min.
Typ.
Max.
Unit
-
23
-
ns
-
65
-
ns
-
503
-
ns
-
237
-
ns
IDSS
Zero gate voltage
Drain current
IGSS
Gate-body leakage
current
VDS = 0, VGS = ± 20 V
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250 µA
RDS(on)
Static drain-source
on- resistance
VGS = 10 V, ID = 60 A
2
Table 5. Dynamic
Symbol
Parameter
Ciss
Input capacitance
Coss
Output capacitance
Crss
Reverse transfer
capacitance
Qg
Total gate charge
Qgs
Gate-source charge
Qgd
Gate-drain charge
Test conditions
VGS = 0, VDS = 25 V,
f = 1 MHz
VDD = 44 V, ID = 110 A,
VGS = 10 V
(see Figure 14)
Table 6. Switching times
Symbol
td(on)
tr
td(off)
tf
4/13
Parameter
Test conditions
Turn-on delay time
Rise time
Turn-off-delay time
VDD = 27.5 V, ID = 55 A
RG = 4.7 Ω VGS = 10 V
(see Figure 13)
Fall time
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STP110N55F6
Electrical characteristics
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max
Unit
Source-drain current
-
110
A
ISDM
(1)
Source-drain current (pulsed)
-
440
A
VSD
(2)
Forward on voltage
ISD = 110 A, VGS = 0
-
1.5
V
trr
Reverse recovery time
-
44
ns
Qrr
Reverse recovery charge
-
82
nC
IRRM
Reverse recovery current
ISD = 110 A, VDD = 44 V
di/dt = 100 A/µs,
Tj = 150 °C
(see Figure 15)
-
3.8
A
ISD
1. Current limited by package.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
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Electrical characteristics
2.1
STP110N55F6
Electrical characteristics (curves)
Figure 2. Safe operating area
Figure 3. Thermal impedance
*,3*6$
,'
$
*,3*6$
.
į
V
DL
H
DU RQ
6
KLV
QW [5'
L
D
LRQ
UDW E\P
H
2S LWHG
/LP
V
PV
PV
6LQJOHSXOVH
7M &
7F &
6LQJOHSXOVH
9'69
Figure 4. Output characteristics
9*6 9
9
9
9
9'69
Figure 6. Gate charge vs gate-source voltage
AM15580v1
VGS
(V)
12
WSV
*,3*6$
9'6 9
9
,' $
Figure 5. Transfer characteristics
*,3*6$
,'
$
VDD=44V
ID=110A
9*69
Figure 7. Static drain-source on-resistance
*,3*6$
5'6RQ
Pȍ
9*6 9
10
8
6
4
2
0
0
6/13
50
100
150
Qg(nC)
DocID019059 Rev 2
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STP110N55F6
Electrical characteristics
Figure 8. Capacitance variations
Figure 9. Normalized gate threshold voltage vs
temperature
*,3*6$
&
S)
AM15583v1
VGS(th)
(norm)
ID=250µA
1.2
1
&LVV
0.8
0.6
0.4
0.2
&RVV
&UVV
9'69
Figure 10. Normalized on-resistance vs
temperature
*,3*6$
5'6RQ
QRUP
9*6 9
0
-75 -50 -25
0 25 50 75 100 125
TJ(°C)
Figure 11. Source-drain diode forward
characteristics
*,3*6$
96' 9
7- &
7- &
7- &
7-&
,6'$
Figure 12. Normalized V(BR)DSS vs temperature
AM15585v1
V(BR)DSS
(norm)
1.15
ID = 1mA
1.1
1.05
1
0.95
0.9
-75 -50 -25 0 25 50 75 100 125 TJ(°C)
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13
Test circuits
3
STP110N55F6
Test circuits
Figure 13. Switching times test circuit for
resistive load
Figure 14. Gate charge test circuit
VDD
12V
47kΩ
1kΩ
100nF
3.3
μF
2200
RL
μF
IG=CONST
VDD
VGS
100Ω
Vi=20V=VGMAX
VD
RG
2200
μF
D.U.T.
D.U.T.
VG
2.7kΩ
PW
47kΩ
1kΩ
PW
AM01468v1
Figure 15. Test circuit for inductive load
switching and diode recovery times
A
A
AM01469v1
Figure 16. Unclamped inductive load test circuit
L
A
D
G
D.U.T.
FAST
DIODE
B
B
VD
L=100μH
S
3.3
μF
B
25 Ω
1000
μF
D
VDD
2200
μF
3.3
μF
VDD
ID
G
RG
S
Vi
D.U.T.
Pw
AM01470v1
AM01471v1
Figure 17. Unclamped inductive waveform
Figure 18. Switching time waveform
ton
V(BR)DSS
tdon
VD
toff
tr
tdoff
tf
90%
90%
IDM
10%
ID
VDD
10%
0
VDD
VDS
90%
VGS
AM01472v1
8/13
0
DocID019059 Rev 2
10%
AM01473v1
STP110N55F6
4
Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST trademark.
DocID019059 Rev 2
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Package mechanical data
STP110N55F6
Figure 19. TO-220 type A drawing
BW\SH$B5HYB7
10/13
DocID019059 Rev 2
STP110N55F6
Package mechanical data
Table 8. TO-220 type A mechanical data
mm
Dim.
Min.
Typ.
Max.
A
4.40
4.60
b
0.61
0.88
b1
1.14
1.70
c
0.48
0.70
D
15.25
15.75
D1
1.27
E
10
10.40
e
2.40
2.70
e1
4.95
5.15
F
1.23
1.32
H1
6.20
6.60
J1
2.40
2.72
L
13
14
L1
3.50
3.93
L20
16.40
L30
28.90
øP
3.75
3.85
Q
2.65
2.95
DocID019059 Rev 2
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Revision history
5
STP110N55F6
Revision history
Table 9. Document revision history
Date
Revision
18-Jul-2011
1
First release.
2
–
–
–
–
–
–
–
11-Jul-2014
12/13
Changes
Modified: title and Description
Modified: ID (at TC = 100 °C) value in Table 2
Modified: RDS(on) typical value
Modified: the entire typical values in Table 5, 6 and 7
Added: Section 2.1: Electrical characteristics (curves)
Updated: Section 4: Package mechanical data
Minor text changes
DocID019059 Rev 2
STP110N55F6
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DocID019059 Rev 2
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