STP110N8F7

STP110N8F7 N-channel 80 V, 6.4 mΩ typ., 80 A, STripFET™ F7 Power MOSFET in a TO-220 package Datasheet - production data Features     Order code VDS RDS(on)max ID PTOT STP110N8F7 80 V 7.5 mΩ 80 A 170 W Among the lowest RDS(on) on the market Excellent figure of merit (FoM) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness Applications  Figure 1: Internal schematic diagram Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Table 1: Device summary Order code Marking Package Packaging STP110N8F7 110N8F7 TO-220 Tube November 2015 DocID027154 Rev 2 This is information on a product in full production. 1/13 www.st.com Contents STP110N8F7 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package mechanical data ............................................................... 9 4.1 5 2/13 TO-220 package mechanical data .................................................. 10 Revision history ............................................................................ 12 DocID027154 Rev 2 STP110N8F7 1 Electrical ratings Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 80 V VGS Gate-source voltage ±20 V ID Drain current (continuous) at TC = 25 °C ID 80 (1) A Drain current (continuous) at TC = 100 °C 76 A IDM Drain current (pulsed) 320 A PTOT Total dissipation at TC = 25 °C 170 W (3) EAS Single pulse avalanche energy 220 mJ TJ Operating junction temperature Tstg Storage temperature (2) -55 to 175 °C °C Notes: (1) (2) (3) Limited by package Pulse width is limited by safe operating area Starting Tj = 25°C, Id = 25 A, Vdd = 40 V Table 3: Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case max 0.88 °C/W Rthj-amb Thermal resistance junction-ambient max 62.5 °C/W DocID027154 Rev 2 3/13 Electrical characteristics 2 STP110N8F7 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 4: On /off states Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage VGS = 0, ID = 250 µA Min. Typ. Max. 80 Unit V VGS = 0, VDS = 80 V 1 µA VGS = 0, VDS = 80 V, TC = 125 °C 10 µA Gate-body leakage current VDS = 0, VGS = ± 20 V ±100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 4.5 V RDS(on) Static drain-source on- resistance VGS = 10 V, ID = 40 A 7.5 mΩ IDSS Zero gate voltage drain current IGSS 2.5 6.4 Table 5: Dynamic Symbol Parameter Test conditions Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Min. Typ. Max. Unit - 3435 - pF - 653 - pF - 57 - pF - 46.8 - nC - 23.4 - nC - 11.2 - nC Test conditions Min. Typ. Max. Unit VDD = 40 V, ID = 40 A, RG = 4.7 Ω, VGS = 10 V (see Figure 13: "Test circuit for resistive load switching times" and Figure 18: "Switching time waveform" ) - 49 - ns - 95 - ns - 60 - ns - 32 - ns VGS = 0, VDS = 40 V, f = 1 MHz VDD = 40 V, ID = 80 A, VGS = 10 V (see Figure 14: "Test circuit for gate charge behavior" ) Table 6: Switching times Symbol td(on) tr td(off) tf 4/13 Parameter Turn-on delay time Rise time Turn-off delay time Fall time DocID027154 Rev 2 STP110N8F7 Electrical characteristics Table 7: Source drain diode Symbol (1) VSD Parameter Test conditions Min. Typ. Max. Unit 1.2 V Forward on voltage VGS = 0, ISD = 80 A - trr Reverse recovery time - 48.6 ns Qrr Reverse recovery charge - 58.6 nC IRRM Reverse recovery current ISD = 80 A, di/dt = 100 A/µs VDD = 60 V (see Figure 15: "Test circuit for inductive load switching and diode recovery times") - 2.4 A Notes: (1) Pulsed: pulse duration = 300 µs, duty cycle 1.5% DocID027154 Rev 2 5/13 Electrical characteristics 2.2 6/13 STP110N8F7 Electrical characteristics (curves) Figure 2: Safe operating area Figure 3: Thermal impedance Figure 4: Output characteristics Figure 5: Transfer characteristics Figure 6: Gate charge vs gate-source voltage Figure 7: Static drain-source on-resistance DocID027154 Rev 2 STP110N8F7 Electrical characteristics Figure 8: Capacitance variations Figure 9: Normalized gate threshold voltage vs temperature Figure 10: Normalized on-resistance vs temperature Figure 11: Normalized V(BR)DSS vs temperature Figure 12: Source-drain diode forward characteristics DocID027154 Rev 2 7/13 Test circuits 3 8/13 STP110N8F7 Test circuits Figure 13: Test circuit for resistive load switching times Figure 14: Test circuit for gate charge behavior Figure 15: Test circuit for inductive load switching and diode recovery times Figure 16: Unclamped inductive load test circuit Figure 17: Unclamped inductive waveform Figure 18: Switching time waveform DocID027154 Rev 2 STP110N8F7 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ® ECOPACK is an ST trademark. DocID027154 Rev 2 9/13 Package mechanical data 4.1 STP110N8F7 TO-220 package mechanical data Figure 19: TO-220 type A package outline 10/13 DocID027154 Rev 2 STP110N8F7 Package mechanical data Table 8: TO-220 type A mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 øP 3.75 3.85 Q 2.65 2.95 DocID027154 Rev 2 11/13 Revision history 5 STP110N8F7 Revision history Table 9: Document revision history Date Revision 10-Nov-2014 1 04-Nov-2015 2 Changes Initial release. Datasheet promoted from target to production data. Modified: Table 2: "Absolute maximum ratings" , Table 5: "Dynamic", Table 6: "Switching times" and Table 7: "Source drain diode" Added: Section 4.1: "Electrical characteristics (curves)" Minor text changes. 12/13 DocID027154 Rev 2 STP110N8F7 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2015 STMicroelectronics – All rights reserved DocID027154 Rev 2 13/13