STP11N60DM2
Datasheet
N-channel 600 V, 370 mΩ typ., 10 A MDmesh DM2 Power MOSFET in a TO-220
package
TAB
1
2
3
TO-220
•
•
•
•
•
•
Order code
VDS @ TJmax
RDS(on)max.
ID
PTOT
STP11N60DM2
650 V
420 mΩ
10 A
110 W
Fast-recovery body diode
Extremely low gate charge and input capacitance
Low on-resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Zener-protected
D(2, TAB)
Applications
•
Switching applications
Description
G(1)
This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fastrecovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined
with low RDS(on), rendering it suitable for the most demanding high-efficiency
converters and ideal for bridge topologies and ZVS phase-shift converters.
S(3)
NG1D2TS3Z
Product status
STP11N60DM2
Product summary
Order code
STP11N60DM2
Marking
11N60DM2
Package
TO-220
Packing
Tube
DS11675 - Rev 2 - November 2019
For further information contact your local STMicroelectronics sales office.
www.st.com
STP11N60DM2
Electrical ratings
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Value
Unit
Gate-source voltage
±25
V
Drain current (continuous) at Tcase = 25 °C
10
Drain current (continuous) at Tcase = 100 °C
6.3
IDM (1)
Drain current (pulsed)
40
A
PTOT
Total power dissipation at Tcase = 25 °C
110
W
dv/dt(2)
Peak diode recovery voltage slope
50
dv/dt(3)
MOSFET dv/dt ruggedness
50
Tstg
Storage temperature range
VGS
ID
Tj
Parameter
Operating junction temperature range
A
V/ns
-55 to 150
°C
Value
Unit
1. Pulse width is limited by safe operating area.
2. ISD ≤ 10 A, di/dt=900 A/μs; VDS peak < V(BR)DSS,VDD = 400 V
3. VDS ≤ 480 V.
Table 2. Thermal data
Symbol
Parameter
Rthj-case
Thermal resistance junction-case
1.14
Rthj-amb
Thermal resistance junction-ambient
62.5
°C/W
Table 3. Avalanche characteristics
Symbol
IAR
(1)
EAS (2)
Parameter
Value
Unit
Avalanche current, repetitive or not repetitive
2.5
A
Single pulse avalanche energy
250
mJ
1. pulse width limited by Tjmax
2. starting Tj = 25 °C, ID = IAR, VDD = 50 V.
DS11675 - Rev 2
page 2/13
STP11N60DM2
Electrical characteristics
2
Electrical characteristics
(Tcase = 25 °C unless otherwise specified)
Table 4. Static
Symbol
V(BR)DSS
Parameter
Drain-source breakdown
voltage
Test conditions
VGS = 0 V, ID = 1 mA
Min.
Typ.
Max.
600
Unit
V
VGS = 0 V, VDS = 600 V
1.5
IDSS
Zero gate voltage drain current
VGS = 0 V, VDS = 600 V,
Tcase = 125 °C(1)
100
IGSS
Gate-body leakage current
VDS = 0 V, VGS = ±25 V
±5
µA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250 µA
4
5
V
RDS(on)
Static drain-source onresistance
VGS = 10 V, ID = 5 A
370
420
mΩ
Min.
Typ.
Max.
Unit
-
614
-
-
32
-
-
1.08
-
3
µA
1. Defined by design, not subject to production test.
Table 5. Dynamic
Symbol
Parameter
Ciss
Input capacitance
Coss
Output capacitance
Crss
Test conditions
VDS = 100 V, f = 1 MHz, VGS = 0 V
Reverse transfer capacitance
(1)
pF
Equivalent output capacitance
VDS = 0 to 480 V, VGS = 0 V
-
57
-
pF
RG
Intrinsic gate resistance
f = 1 MHz, ID = 0 A
-
6.2
-
Ω
Qg
Total gate charge
-
16.5
-
Qgs
Gate-source charge
-
3.8
-
Qgd
Gate-drain charge
-
9.2
-
Coss eq.
VDD = 480 V, ID = 10 A, VGS = 0 to 10 V
(see Figure 14. Test circuit for gate
charge behavior)
nC
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0
to 80% VDSS.
Table 6. Switching times
Symbol
td(on)
tr
td(off)
tf
DS11675 - Rev 2
Parameter
Test conditions
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 300 V, ID = 5 A, RG = 4.7 Ω,
VGS = 10 V (see Figure 13. Test circuit
for resistive load switching times and
Figure 18. Switching time waveform)
Min.
Typ.
Max.
-
11.7
-
-
6.3
-
-
31
-
-
9.5
-
Unit
ns
page 3/13
STP11N60DM2
Electrical characteristics
Table 7. Source-drain diode
Symbol
ISD (1)
ISDM
(2)
VSD (3)
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Source-drain current
-
10
A
Source-drain current (pulsed)
-
40
A
-
1.6
V
VGS = 0 V, ISD = 10 A
Forward on voltage
trr
Reverse recovery time
Qrr
Reverse recovery charge
IRRM
Reverse recovery current
trr
Reverse recovery time
Qrr
Reverse recovery charge
IRRM
Reverse recovery current
ISD = 10 A, di/dt = 100 A/µs, VDD = 60 V
(see Figure 15. Test circuit for inductive
load switching and diode recovery times)
ISD = 10 A, di/dt = 100 A/µs, VDD = 60 V,
Tj = 150 °C (see Figure 15. Test circuit
for inductive load switching and diode
recovery times )
-
90
ns
-
248
nC
-
5.5
A
-
160
ns
-
664
nC
-
8.3
A
Min.
Typ.
Max.
Unit
±30
-
-
V
1. Limited by maximum junction temperature.
2. Pulse width is limited by safe operating area.
3. Pulse test: pulse duration = 300 µs, duty cycle 1.5%.
Table 8. Gate-source Zener diode
Symbol
V(BR)GSO
Parameter
Test conditions
Gate-source breakdown voltage IGS = ±250 µA, ID = 0 A
The built-in back-to-back Zener diodes are specifically designed to enhance the ESD performance of the device.
The Zener voltage facilitates efficient and cost-effective device integrity protection, thus eliminating the need for
additional external componentry.
DS11675 - Rev 2
page 4/13
STP11N60DM2
Electrical characteristics curves
2.1
Electrical characteristics curves
Figure 2. Thermal impedance
Figure 1. Safe operating area
ID
(A)
GIPG270516FQ6F01PSOA
Operation in this area is
limited by max. R DS(on)
101
t p = 10µs
t p = 100µs
t p = 1ms
100
t p = 10ms
10-1
10-1
T j ≤ 150 °C
Tc =25°C
single pulse
0
10
101
102
103
V DS (V)
Figure 3. Output characteristics
ID
(A)
Figure 4. Transfer characteristics
ID
(A)
GIPG270516FQ6F01FOCH
V GS = 8, 9, 10 V
20
16
7V
12
12
8
8
6V
4
0
4
8
12
16
4
V DS (V)
Figure 5. Gate charge vs gate-source voltage
GIPG270516FQ6F01FQVG V DS
V GS
(V)
(V)
V DD = 480V
I D = 10 A
12
DS11675 - Rev 2
600
V DS
10
400
6
300
4
200
2
100
0
0
2
3
4
5
6
7
8
9 V GS (V)
Figure 6. Static drain-source on-resistance
R DS(on)
(mΩ)
GIPG270516FQ6F01FRID
V GS = 10 V
390
500
8
0
V DS = 20 V
20
16
0
GIPG270516FQ6F01FTCH
4
8
12
16
0
Qg (nC)
380
370
360
350
0
2
4
6
8
10
I D (A)
page 5/13
STP11N60DM2
Electrical characteristics curves
Figure 7. Capacitance variations
C
(pF)
GIPG270516FQ6F01FCVR
C iss
103
Figure 8. Normalized gate threshold voltage vs
temperature
V GS(th)
(norm.)
GIPG270516FQ6F01FVTH
I D = 250 μ A
1.1
1.0
102
C oss
0.9
f = 1 MHz
101
C rss
0.8
100
0.7
10-1
10-1
100
101
102
V DS (V)
Figure 9. Normalized on-resistance vs temperature
R DS(on)
(norm.)
GIPG270516FQ6F01FRON
VGS =10 V
2.2
0.6
-75
1.00
1.0
0.96
0.6
0.92
75
125
T J (°C)
Figure 11. Output capacitance stored energy
Eoss
(µJ )
GIPG270516FQ6F01FEOS
4
3
125
T J (°C)
GIPG270516FQ6F01FBDV
I D = 1 mA
1.08
1.4
25
75
V (BR)DSS
(norm.)
1.04
-25
25
Figure 10. Normalized V(BR)DSS vs temperature
1.8
0.2
-75
-25
0.88
-75
-25
25
75
125
T J (°C)
Figure 12. Source-drain diode forward characteristics
V SD
(V)
GIPG270516FQ6F01FSDF
1.1
T J = - 50 °C
1.0
T J = 25 °C
0.9
T J = 150 °C
0.8
2
0.7
1
0.6
0
DS11675 - Rev 2
0
100
200
300
400
500
600 VDS (V)
0.5
0
2
4
6
8
10
I SD (A)
page 6/13
STP11N60DM2
Test circuits
3
Test circuits
Figure 13. Test circuit for resistive load switching times
Figure 14. Test circuit for gate charge behavior
VDD
12 V
2200
+ μF
3.3
μF
VDD
VD
VGS
1 kΩ
100 nF
RL
IG= CONST
VGS
RG
47 kΩ
+
pulse width
D.U.T.
2.7 kΩ
2200
μF
pulse width
D.U.T.
100 Ω
VG
47 kΩ
1 kΩ
AM01469v1
AM01468v1
Figure 15. Test circuit for inductive load switching and
diode recovery times
D
G
A
D.U.T.
S
25 Ω
A
L
A
B
B
3.3
µF
D
G
+
VD
100 µH
fast
diode
B
Figure 16. Unclamped inductive load test circuit
RG
1000
+ µF
2200
+ µF
VDD
3.3
µF
VDD
ID
D.U.T.
S
D.U.T.
Vi
_
pulse width
AM01471v1
AM01470v1
Figure 18. Switching time waveform
Figure 17. Unclamped inductive waveform
ton
V(BR)DSS
td(on)
VD
toff
td(off)
tr
tf
90%
90%
IDM
VDD
10%
0
ID
VDD
AM01472v1
VGS
0
VDS
10%
90%
10%
AM01473v1
DS11675 - Rev 2
page 7/13
STP11N60DM2
Package information
4
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
status are available at: www.st.com. ECOPACK is an ST trademark.
DS11675 - Rev 2
page 8/13
STP11N60DM2
TO-220 type A package information
4.1
TO-220 type A package information
Figure 19. TO-220 type A package outline
0015988_typeA_Rev_22
DS11675 - Rev 2
page 9/13
STP11N60DM2
TO-220 type A package information
Table 9. TO-220 type A package mechanical data
Dim.
mm
Min.
Max.
A
4.40
4.60
b
0.61
0.88
b1
1.14
1.55
c
0.48
0.70
D
15.25
15.75
D1
DS11675 - Rev 2
Typ.
1.27
E
10.00
10.40
e
2.40
2.70
e1
4.95
5.15
F
1.23
1.32
H1
6.20
6.60
J1
2.40
2.72
L
13.00
14.00
L1
3.50
3.93
L20
16.40
L30
28.90
øP
3.75
3.85
Q
2.65
2.95
page 10/13
STP11N60DM2
Revision history
Table 10. Document revision history
Date
Revision
17-Jun-2016
1
Changes
First release.
Modified Table 1. Absolute maximum ratings
06-Nov-2019
2
Updated Section 4.1 TO-220 type A package information.
Minor text changes.
DS11675 - Rev 2
page 11/13
STP11N60DM2
Contents
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2
Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
4
Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
4.1
TO-220 type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
DS11675 - Rev 2
page 12/13
STP11N60DM2
IMPORTANT NOTICE – PLEASE READ CAREFULLY
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST
products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST
products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of
Purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of ST. For additional information about ST trademarks, please refer to www.st.com/trademarks. All other product or service
names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2019 STMicroelectronics – All rights reserved
DS11675 - Rev 2
page 13/13