STP11N65M2

STD11N65M2, STP11N65M2, STU11N65M2 Datasheet N-channel 650 V, 0.60 Ω typ., 7 A MDmesh™ M2 Power MOSFET in DPAK, TO-220 and IPAK packages TAB Features TAB Order code 3 DPAK 1 TO-220 TAB IPAK 12 1 2 3 VDS RDS(on) max. D(2, TAB) PTOT STD11N65M2 STP11N65M2 Package DPAK 650 V 0.68 Ω STU11N65M2 3 ID • • Extremely low gate charge Excellent output capacitance (COSS) profile • • 100% avalanche tested Zener-protected 7A 85 W TO-220 IPAK Applications G(1) • Switching applications Description S(3) NG1D2TS3Z These devices are N-channel Power MOSFETs developed using the MDmesh M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters. Product status link STD11N65M2 STP11N65M2 STU11N65M2 DS10348 - Rev 6 - June 2019 For further information contact your local STMicroelectronics sales office. www.st.com STD11N65M2, STP11N65M2, STU11N65M2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol VGS Parameter Gate-source voltage Value Unit ±25 V Drain current (continuous) at Tcase = 25 °C 7 Drain current (continuous) at Tcase = 100 °C 4.4 IDM (1) Drain current (pulsed) 28 A PTOT Total power dissipation at Tcase = 25 °C 85 W dv/dt (2) Peak diode recovery voltage slope 15 dv/dt(3) MOSFET dv/dt ruggedness 50 Tstg Storage temperature range ID Tj A V/ns -55 to 150 Operating junction temperature range °C 1. Pulse width limited by Tjmax. 2. ISD ≤ 7 A, di/dt ≤ 400 A/μs, VDS (peak) ≤ V(BR)DSS, VDS = 400 V 3. VDS ≤ 520 V. Table 2. Thermal data Value Parameter Symbol DPAK Rthj-case Thermal resistance junction-case Rthj-amb Thermal resistance junction-ambient Rthj-pcb (1) TO-220 IPAK Unit 1.47 Thermal resistance junction-pcb 62.5 100 °C/W Value Unit 50 1. When mounted on a 1-inch² FR-4, 2 Oz copper board. Table 3. Avalanche characteristics Symbol Parameter IAR (1) Avalanche current, repetitive or not repetitive 1.5 A EAS (2) Single pulse avalanche energy 110 mJ 1. Pulse width limited by Tjmax. 2. starting Tj = 25 °C, ID = IAR, VDD = 50 V. DS10348 - Rev 6 page 2/27 STD11N65M2, STP11N65M2, STU11N65M2 Electrical characteristics 2 Electrical characteristics (Tcase = 25 °C unless otherwise specified) Table 4. Static Symbol Parameter Test conditions Min. V(BR)DSS Drain-source breakdown voltage VGS = 0 V, ID = 1 mA 650 Typ. Zero gate voltage drain current IGSS Gate-body leakage current VDS = 0 V, VGS = ±25 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source onresistance VGS = 10 V, ID = 3.5 A VGS = 0 V, VDS = 650 V, Tcase = 125 Unit V VGS = 0 V, VDS = 650 V IDSS Max. 1 °C(1) 100 µA ±10 µA 3 4 V 0.60 0.68 Ω Min. Typ. Max. Unit - 410 - - 20 - 2 1. Defined by design, not subject to production test. Table 5. Dynamic Symbol Parameter Test conditions Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance - 0.9 - Equivalent output capacitance VDS = 0 to 520 V, VGS = 0 V - 43 - pF - 6.4 - Ω - 12.5 - - 3.2 - - 5.8 - Coss eq. (1) RG Intrinsic gate resistance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge VDS = 100 V, f = 1 MHz, VGS = 0 V f = 1 MHz, ID = 0 A VDD = 520 V, ID = 7 A, VGS = 0 to 10 V (see Figure 16) pF nC 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. Table 6. Switching times Symbol td(on) tr td(off) tf DS10348 - Rev 6 Parameter Test conditions Turn-on delay time Rise time Turn-off delay time Fall time VDD = 325 V, ID = 3.5 A RG = 4.7 Ω, VGS = 10 V (see Figure 15 and Figure 20) Min. Typ. Max. - 9.5 - - 7.5 - - 26 - - 15 - Unit ns page 3/27 STD11N65M2, STP11N65M2, STU11N65M2 Electrical characteristics Table 7. Source-drain diode Symbol ISD Parameter Test conditions Min. Typ. Max. Unit Source-drain current - 7 A ISDM (1) Source-drain current (pulsed) - 28 A VSD (2) Forward on voltage - 1.6 V trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current trr VGS = 0 V, ISD = 7 A ISD = 7 A, di/dt = 100 A/µs, VDD = 60 V (see Figure 17) Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current ISD = 7 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C (see Figure 17) - 318 ns - 2.5 µC - 15.5 A - 437 ns - 3.2 µC - 15 A 1. Pulse width is limited by safe operating area. 2. Pulse test: pulse duration = 300 µs, duty cycle 1.5%. DS10348 - Rev 6 page 4/27 STD11N65M2, STP11N65M2, STU11N65M2 Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 1. Safe operating area for DPAK and IPAK GIPG140815MQF1DSOA ID (A) Figure 2. Thermal impedance for DPAK and IPAK GC20460 K Operation in this area is 10 μs 10 1 limited by R DS(on) 100 μs 10 0 100 1 ms 10 ms 10 -1 10 -2 10 -1 10 0 T j ≤ 150 °C T c = 25 °C single pulse 10 1 10 2 V DS (V) Figure 3. Safe operating area for TO-220 10-1 10-2 10-5 10-4 10-3 10-2 10-1 tp (s) Figure 4. Thermal impedance for TO-220 GIPG140815MQF1PSOA ID (A) Operation in this area is 10 1 limited by R DS(on) 10 μs 100 μs 10 0 1 ms 10 ms 10 -1 10 -2 10 -1 10 0 T j ≤ 150 °C T c = 25 °C single pulse 10 1 10 2 V DS (V) Figure 5. Output characteristics ID (A) GIPG110515MQF1LOCH V GS = 8,9,10 V V GS = 7 V 12 10 ID (A) 12 V GS = 6 V V DS = 19 V 8 6 6 4 4 2 0 0 GIPG110515MQF1LTCH 10 8 DS10348 - Rev 6 Figure 6. Transfer characteristics 4 8 12 V GS = 5 V 2 16 0 0 V DS (V) 2 4 6 8 V GS (V) page 5/27 STD11N65M2, STP11N65M2, STU11N65M2 Electrical characteristics (curves) Figure 7. Gate charge vs gate-source voltage GIPG110515MQF1LQVG VDS VGS (V) 12 (V) VDS R DS(on) (Ω) GIPG140815MQF1PRID 600 VDD = 520 V ID = 7 A 10 Figure 8. Static drain-source on-resistance 500 8 400 6 300 4 200 2 100 V GS = 10 V 0.624 0.608 0 0 2 4 6 8 10 12 0 Qg (nC) Figure 9. Capacitance variations C (pF) GIPG140815MQF1PCVR 0.592 0.576 0 2 4 I D (A) Figure 10. Normalized gate threshold voltage vs temperature V GS(th) (norm.) 10 3 6 GIPG110515MQF1LVTH I D = 250 µA 1.1 C ISS 1.0 10 2 C OSS 10 1 0.9 0.8 f = 1 MHz 10 0 C RSS 0.7 10 -1 10 -1 10 0 10 1 10 2 V DS (V) Figure 11. Normalized on-resistance vs temperature R DS(on) (norm.) GIPG110515MQF1LRON V GS = 10 V 2.2 0.6 -75 V (BR)DSS (norm.) 1.4 1.00 1.0 0.96 0.6 0.92 DS10348 - Rev 6 25 75 125 T j (°C) 75 125 T j (°C) GIPG110515MQF1LBDV I D = 1 mA 1.08 1.04 -25 25 Figure 12. Normalized V(BR)DSS vs temperature 1.8 0.2 -75 -25 0.88 -75 -25 25 75 125 T j (°C) page 6/27 STD11N65M2, STP11N65M2, STU11N65M2 Electrical characteristics (curves) Figure 13. Output capacitance stored energy E OSS (μJ) GIPG110515MQF1LEOS Figure 14. Source- drain diode forward characteristics V SD (V) GIPG140815MQF1PSDF T j = -50 °C 3 1.0 2 0.8 1 0.6 T j = 25 °C T j = 150 °C 0 0 DS10348 - Rev 6 100 200 300 400 500 600 V DS (V) 0.4 0 2 4 6 I SD (A) page 7/27 STD11N65M2, STP11N65M2, STU11N65M2 Test circuits 3 Test circuits Figure 15. Test circuit for resistive load switching times Figure 16. Test circuit for gate charge behavior VDD 12 V 2200 + μF 3.3 μF VDD VD VGS 1 kΩ 100 nF RL IG= CONST VGS RG 47 kΩ + pulse width D.U.T. 2.7 kΩ 2200 μF pulse width D.U.T. 100 Ω VG 47 kΩ 1 kΩ AM01469v1 AM01468v1 Figure 17. Test circuit for inductive load switching and diode recovery times D G A D.U.T. S 25 Ω A L A B B 3.3 µF D G + VD 100 µH fast diode B Figure 18. Unclamped inductive load test circuit RG 1000 + µF 2200 + µF VDD 3.3 µF VDD ID D.U.T. S D.U.T. Vi _ pulse width AM01471v1 AM01470v1 Figure 20. Switching time waveform Figure 19. Unclamped inductive waveform ton V(BR)DSS td(on) VD toff td(off) tr tf 90% 90% IDM VDD 10% 0 ID VDD AM01472v1 VGS 0 VDS 10% 90% 10% AM01473v1 DS10348 - Rev 6 page 8/27 STD11N65M2, STP11N65M2, STU11N65M2 Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. DS10348 - Rev 6 page 9/27 STD11N65M2, STP11N65M2, STU11N65M2 DPAK (TO-252) type A package information 4.1 DPAK (TO-252) type A package information Figure 21. DPAK (TO-252) type A package outline 0068772_A_26 DS10348 - Rev 6 page 10/27 STD11N65M2, STP11N65M2, STU11N65M2 DPAK (TO-252) type A package information Table 8. DPAK (TO-252) type A mechanical data Dim. mm Min. Max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 4.95 E 6.40 E1 4.60 4.70 4.80 e 2.159 2.286 2.413 e1 4.445 4.572 4.699 H 9.35 10.10 L 1.00 1.50 (L1) 2.60 2.80 3.00 L2 0.65 0.80 0.95 L4 0.60 R V2 DS10348 - Rev 6 Typ. 5.10 5.25 6.60 1.00 0.20 0° 8° page 11/27 STD11N65M2, STP11N65M2, STU11N65M2 DPAK (TO-252) type C package information 4.2 DPAK (TO-252) type C package information Figure 22. DPAK (TO-252) type C package outline 0068772_C_26 DS10348 - Rev 6 page 12/27 STD11N65M2, STP11N65M2, STU11N65M2 DPAK (TO-252) type C package information Table 9. DPAK (TO-252) type C mechanical data Dim. mm Min. Typ. Max. A 2.20 2.30 2.38 A1 0.90 1.01 1.10 A2 0.00 0.10 b 0.72 0.85 b4 5.13 c 0.47 0.60 c2 0.47 0.60 D 6.00 D1 5.25 E 6.50 E1 4.70 e 5.46 6.10 6.20 6.60 6.70 2.186 2.286 2.386 H 9.80 10.10 10.40 L 1.40 1.50 1.70 L1 L2 2.90 REF 0.90 L3 L4 1.25 0.51 BSC 0.60 L6 DS10348 - Rev 6 5.33 0.80 1.00 1.80 BSC θ1 5° 7° 9° θ2 5° 7° 9° V2 0° 8° page 13/27 STD11N65M2, STP11N65M2, STU11N65M2 DPAK (TO-252) type E package information 4.3 DPAK (TO-252) type E package information Figure 23. DPAK (TO-252) type E package outline 0068772_type-E_rev.26 DS10348 - Rev 6 page 14/27 STD11N65M2, STP11N65M2, STU11N65M2 DPAK (TO-252) type E package information Table 10. DPAK (TO-252) type E mechanical data Dim. A mm Min. Typ. Max. 2.18 2.39 A2 0.13 b 0.65 0.884 b4 4.95 5.46 c 0.46 0.61 c2 0.46 0.60 D 5.97 6.22 D1 5.21 E 6.35 E1 4.32 6.73 e 2.286 e1 4.572 H 9.94 10.34 L 1.50 1.78 L1 L2 2.74 0.89 L4 1.27 1.02 Figure 24. DPAK (TO-252) recommended footprint (dimensions are in mm) FP_0068772_26 DS10348 - Rev 6 page 15/27 STD11N65M2, STP11N65M2, STU11N65M2 DPAK (TO-252) packing information 4.4 DPAK (TO-252) packing information Figure 25. DPAK (TO-252) tape outline 10 pitches cumulative tolerance on tape +/- 0.2 mm T P0 Top cover tape P2 D E F B1 K0 For machine ref. only including draft and radii concentric around B0 W B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v1 DS10348 - Rev 6 page 16/27 STD11N65M2, STP11N65M2, STU11N65M2 DPAK (TO-252) packing information Figure 26. DPAK (TO-252) reel outline T 40mm min. access hole at slot location B D C N A G measured at hub Tape slot in core for tape start 2.5mm min.width Full radius AM06038v1 Table 11. DPAK (TO-252) tape and reel mechanical data Tape Dim. mm mm Dim. Min. Max. A0 6.8 7 A B0 10.4 10.6 B 1.5 12.1 C 12.8 1.6 D 20.2 G 16.4 50 B1 DS10348 - Rev 6 Reel Min. Max. 330 13.2 D 1.5 D1 1.5 E 1.65 1.85 N F 7.4 7.6 T K0 2.55 2.75 P0 3.9 4.1 Base qty. 2500 P1 7.9 8.1 Bulk qty. 2500 P2 1.9 2.1 R 40 T 0.25 0.35 W 15.7 16.3 18.4 22.4 page 17/27 STD11N65M2, STP11N65M2, STU11N65M2 TO-220 type A package information 4.5 TO-220 type A package information Figure 27. TO-220 type A package outline 0015988_typeA_Rev_22 DS10348 - Rev 6 page 18/27 STD11N65M2, STP11N65M2, STU11N65M2 TO-220 type A package information Table 12. TO-220 type A package mechanical data Dim. mm Min. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.55 c 0.48 0.70 D 15.25 15.75 D1 DS10348 - Rev 6 Typ. 1.27 E 10.00 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13.00 14.00 L1 3.50 3.93 L20 16.40 L30 28.90 øP 3.75 3.85 Q 2.65 2.95 page 19/27 STD11N65M2, STP11N65M2, STU11N65M2 IPAK (TO-251) type A package information 4.6 IPAK (TO-251) type A package information Figure 28. IPAK (TO-251) type A package outline 0068771_IK_typeA_rev14 DS10348 - Rev 6 page 20/27 STD11N65M2, STP11N65M2, STU11N65M2 IPAK (TO-251) type A package information Table 13. IPAK (TO-251) type A package mechanical data Dim. mm Min. Typ. A 2.20 2.40 A1 0.90 1.10 b 0.64 0.90 b2 b4 0.95 5.20 B5 5.40 0.30 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 E 6.40 6.60 e e1 2.28 4.40 H DS10348 - Rev 6 Max. 4.60 16.10 L 9.00 9.40 L1 0.80 1.20 L2 0.80 V1 10° 1.00 page 21/27 STD11N65M2, STP11N65M2, STU11N65M2 IPAK (TO-251) type C package information 4.7 IPAK (TO-251) type C package information Figure 29. IPAK (TO-251) type C package outline 0068771_IK_typeC_rev14 DS10348 - Rev 6 page 22/27 STD11N65M2, STP11N65M2, STU11N65M2 IPAK (TO-251) type C package information Table 14. IPAK (TO-251) type C package mechanical data Dim. mm Min. Typ. Max. A 2.20 2.30 2.35 A1 0.90 1.00 1.10 b 0.66 0.79 b2 DS10348 - Rev 6 0.90 b4 5.23 5.33 5.43 c 0.46 0.59 c2 0.46 0.59 D 6.00 6.10 6.20 D1 5.20 5.37 5.55 E 6.50 6.60 6.70 E1 4.60 4.78 4.95 e 2.20 2.25 2.30 e1 4.40 4.50 4.60 H 16.18 16.48 16.78 L 9.00 9.30 9.60 L1 0.80 1.00 1.20 L2 0.90 1.08 1.25 θ1 3° 5° 7° θ2 1° 3° 5° page 23/27 STD11N65M2, STP11N65M2, STU11N65M2 Ordering information 5 Ordering information Table 15. Ordering information Order code Marking STD11N65M2 STP11N65M2 STU11N65M2 DS10348 - Rev 6 11N65M2 Package Packing DPAK Tape and reel TO-220 IPAK Tube page 24/27 STD11N65M2, STP11N65M2, STU11N65M2 Revision history Table 16. Document revision history Date 16-May-2014 Revision Changes 1 First release. Text and formatting chamges throughout document. On cover page: - updated Title, Features and Description 14-Aug-2015 2 In section Electrical characteristics: - updated and renamed table Static (was On /off states) Updated section Electrical characteristics (curves) Updated and renamed section Package information (was Package mechanical data) Datasheet promoted from preliminary data to production data. In section Electrical ratings: - updated and renamed table Absolute maximum ratings In section Electrical characteristics: 17-Aug-2015 3 - updated table Source-drain diode In section Electrical characteristics (curves) - updated figure Thermal impedance for DPAK and IPAK Updated and renamed section IPAK (TO-251) Type C package information (was IPAK (TO-251) Type A package information) DS10348 - Rev 6 07-Sep-2015 4 Minor text and formatting changes throughout document. 16-Oct-2018 5 Updated Section 4 Package information. Minor text changes. 18-Jun-2019 6 Updated Section 3 Minor text changes. page 25/27 STD11N65M2, STP11N65M2, STU11N65M2 Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9 5 4.1 DPAK (TO-252) type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4.2 DPAK (TO-252) type C package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 4.3 DPAK (TO-252) type E package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 4.4 DPAK (TO-252) packing information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 4.5 TO-220 type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 4.6 IPAK (TO-251) type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 4.7 IPAK (TO-251) type C package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .24 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .25 DS10348 - Rev 6 page 26/27 STD11N65M2, STP11N65M2, STU11N65M2 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. For additional information about ST trademarks, please refer to www.st.com/trademarks. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2019 STMicroelectronics – All rights reserved DS10348 - Rev 6 page 27/27