STP11NM80_10

STB11NM80, STF11NM80 STP11NM80, STW11NM80 N-channel 800 V, 0.35 Ω, 11 A MDmesh™ Power MOSFET TO-220, TO-220FP, D2PAK, TO-247 Features Type STB11NM80 STF11NM80 STP11NM80 STW11NM80 ■ ■ ■ 1 VDSS RDS(on) max RDS(on)*Qg ID 3 2 3 1 D²PAK 800 V < 0.40 Ω 14Ω*nC 11 A TO-247 Low input capacitance and gate charge Low gate input resistance Best RDS(on)*Qg in the industry 1 2 3 3 1 2 TO-220 TO-220FP Application ■ Switching applications Figure 1. Internal schematic diagram Description The MDmesh™ associates the multiple drain process with the company’s PowerMesh™ horizontal layout assuring an outstanding low onresistance. The adoption of the company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products. Table 1. Device summary Marking B11NM80 F11NM80 P11NM80 W11NM80 Package D²PAK TO-220FP TO-220 TO-247 Tube Packaging Tape and reel Order codes STB11NM80 STF11NM80 STP11NM80 STW11NM80 March 2010 Doc ID 9241 Rev 10 1/17 www.st.com 17 Contents STB/F/P/W11NM80 Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 4 5 6 Test circuits .............................................. 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 2/17 Doc ID 9241 Rev 10 STB/F/P/W11NM80 Electrical ratings 1 Electrical ratings Table 2. Symbol Absolute maximum ratings Value Parameter TO-220, D²PAK, TO-247 800 ±30 11 8 44 150 1.2 11 (1) Unit TO-220FP V V A A A W W/°C V °C VDS VGS ID ID IDM (2) Drain-source voltage (VGS = 0) Gate-source voltage Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC=100 °C Drain current (pulsed) Total dissipation at TC = 25 °C Derating factor 8 (1) 44 (1) PTOT 35 0.28 2500 VISO TJ Tstg Insulation withstand voltage (DC) Operating junction temperature Storage temperature -65 to 150 1. Limited only by the maximum temperature allowed 2. Pulse width limited by safe operating area Table 3. Symbol Thermal data Value Parameter TO-220, D²PAK, TO-247 0.83 62.5 300 Unit TO-220FP 3.6 °C/W °C/W °C Rthj-case Rthj-a Tl Thermal resistance junction-case max Thermal resistance junction-ambient max Maximum lead temperature for soldering purpose Table 4. Symbol IAS EAS Avalanche characteristics Parameter Avalanche current, repetitive or notrepetitive (pulse width limited by Tj max) Single pulse avalanche energy (starting Tj=25 °C, ID=IAR, VDD=50 V) Value 2.5 400 Unit A mJ Doc ID 9241 Rev 10 3/17 Electrical characteristics STB/F/P/W11NM80 2 Electrical characteristics (TCASE= 25 °C unless otherwise specified) Table 5. Symbol V(BR)DSS dv/dt (1) IDSS IGSS VGS(th) RDS(on) On/off states Parameter Drain-source breakdown voltage Drain source voltage slope Zero gate voltage drain current (VGS = 0) Gate body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 250 µA, VGS= 0 VDD = 640 V, ID = 11 A, VGS = 10 V VDS = Max rating, VDS = Max rating @125°C VGS = ±30 V VDS= VGS, ID = 250 µA VGS= 10 V, ID= 5.5 A 3 4 0.35 Min. 800 30 10 100 100 5 0.40 Typ. Max. Unit V V/ns µA µA nA V Ω 1. Characteristic value at turn off on inductive load Table 6. Symbol gfs (1) Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf Dynamic Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Gate input resistance Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDS > ID(on) x RDS(on)max, ID= 7.5 A VDS =25 V, f=1 MHz, VGS=0 VDD=640 V, ID = 11 A VGS =10 V Figure 10 f=1MHz Gate DC Bias=0 Test signal level=20 mV open drain VDD=400 V, ID= 5.5 A, RG=4.7 Ω, VGS=10 V Figure 17 Min. Typ. 8 1630 750 30 43.6 11.6 21 2.7 22 17 46 15 Max. Unit S pF pF pF nC nC nC Ω ns ns ns ns - - - - - - - - 1. Pulsed: pulse duration=300µs, duty cycle 1.5% 4/17 Doc ID 9241 Rev 10 STB/F/P/W11NM80 Electrical characteristics Table 7. Symbol ISD ISDM VSD (1) (2) Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current ISD=11 A, VGS=0 ISD=11 A, di/dt = 100 A/µs, VDD= 50 V ISD=11 A, di/dt = 100 A/µs, VDD= 50 V, Tj=150 °C 612 7.22 23.6 970 11.25 23.2 44 0.86 A V ns µC A ns µC A Test conditions Min. Typ. Max. 11 Unit A trr Qrr IRRM trr Qrr IRRM - 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300µs, duty cycle 1.5% Doc ID 9241 Rev 10 5/17 Electrical characteristics STB/F/P/W11NM80 2.1 Figure 2. ID (A) Electrical characteristics (curves) Safe operating area for TO-220, D²PAK, TO-247 AM03328v1 Figure 3. Thermal impedance for TO-220, D²PAK, TO-247 1µs Op Lim era ite tion d by in th m is ax ar Re (o n) 10 a is 10µs 100µs 1ms Tj=150°C Tc=25°C Sinlge pulse 10ms 1 0.1 0.1 DS 1 10 100 VDS(V) Figure 4. ID (A) Safe operating area for TO-220FP AM03329v1 Figure 5. Thermal impedance for TO-220FP 10 1 is ea ) ar S(on is D th R x in n ma tio by ra d pe e O imit L 1µs 10µs 100µs 1ms 10ms Tj=150°C Tc=25°C Sinlge pulse 0.1 0.01 0.1 1 10 100 VDS(V) Figure 6. Output characteristics Figure 7. Output characteristics 6/17 Doc ID 9241 Rev 10 STB/F/P/W11NM80 Figure 8. Transfer characteristics Figure 9. Electrical characteristics Transconductance Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations Figure 12. Normalized gate threshold voltage vs temperature Figure 13. Static drain-source on resistance Doc ID 9241 Rev 10 7/17 Electrical characteristics Figure 14. Source-drain diode forward characteristics STB/F/P/W11NM80 Figure 15. Normalized on resistance vs temperature Figure 16. Normalized BVDSS vs temperature 8/17 Doc ID 9241 Rev 10 STB/F/P/W11NM80 Test circuits 3 Test circuits Figure 18. Gate charge test circuit VDD 12V 2200 Figure 17. Switching times test circuit for resistive load 47kΩ 100nF 1kΩ RL VGS VD RG PW D.U.T. µF 3.3 µF VDD Vi=20V=VGMAX 2200 µF IG=CONST 2.7kΩ 47kΩ PW 1kΩ 100Ω D.U.T. VG AM01468v1 AM01469v1 Figure 19. Test circuit for inductive load Figure 20. Unclamped inductive load test switching and diode recovery times circuit A D G S B 25 Ω D.U.T. A FAST DIODE B A L=100µH B D G 3.3 µF 1000 µF L VD 2200 µF 3.3 µF VDD VDD ID RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 21. Unclamped inductive waveform V(BR)DSS VD Figure 22. Switching time waveform ton tdon tr toff tdoff tf 90% IDM 90% 10% ID VDD VDD 0 10% VDS 90% VGS AM01472v1 0 10% AM01473v1 Doc ID 9241 Rev 10 9/17 Package mechanical data STB/F/P/W11NM80 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 10/17 Doc ID 9241 Rev 10 STB/F/P/W11NM80 Package mechanical data Table 8. Dim. TO-220FP mechanical data mm Min. Typ. Max. 4.6 2.7 2.75 0.7 1 1.70 1.70 5.2 2.7 10.4 16 28.6 9.8 2.9 15.9 9 3 30.6 10.6 3.6 16.4 9.3 3.2 A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 Dia 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 Figure 23. TO-220FP drawing L7 E A B D Dia L6 L5 F1 F2 F H G1 G L2 L3 L4 7012510_Rev_K Doc ID 9241 Rev 10 11/17 Package mechanical data STB/F/P/W11NM80 TO-220 type A mechanical data mm Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 ∅P Q 4.40 0.61 1.14 0.48 15.25 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 Typ Max 4.60 0.88 1.70 0.70 15.75 0015988_Rev_S 12/17 Doc ID 9241 Rev 10 STB/F/P/W11NM80 Package mechanical data TO-247 Mechanical data mm. Min. 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 3.65 5.50 14.80 4.30 Typ Max. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 Dim. A A1 b b1 b2 c D E e L L1 L2 øP øR S Doc ID 9241 Rev 10 13/17 Package mechanical data STB/F/P/W11NM80 D²PAK (TO-263) mechanical data mm Dim Min A A1 b b2 c c2 D D1 E E1 e e1 H J1 L L1 L2 R V2 4.40 0.03 0.70 1.14 0.45 1.23 8.95 7.50 10 8.50 2.54 4.88 15 2.49 2.29 1.27 1.30 0.4 0° 8° 0° 5.28 15.85 2.69 2.79 1.40 1.75 0.192 0.590 0.099 0.090 0.05 0.051 Typ Max 4.60 0.23 0.93 1.70 0.60 1.36 9.35 10.40 Min 0.173 0.001 0.027 0.045 0.017 0.048 0.352 0.295 0.394 0.334 inch Typ Max 0.181 0.009 0.037 0.067 0.024 0.053 0.368 0.409 0.1 0.208 0.624 0.106 0.110 0.055 0.069 0.016 8° 0079457_M 14/17 Doc ID 9241 Rev 10 STB/F/P/W11NM80 Packaging mechanical data 5 Packaging mechanical data D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 24.4 100 30.4 26.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0795 0.960 1.039 3.937 1.197 BULK QTY 1000 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T W mm MIN. 10.5 15.7 1.5 1.59 1.65 11.4 4.8 3.9 11.9 1.9 50 0.25 23.7 24.3 MAX. 10.7 15.9 1.6 1.61 1.85 11.6 5.0 4.1 12.1 2.1 inch MIN. MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574 0.35 0.0098 0.0137 0.933 0.956 BASE QTY 1000 Doc ID 9241 Rev 10 15/17 Revision history STB/F/P/W11NM80 6 Revision history Table 9. Date 30-Sep-2004 26-Nov-2005 07-Apr-2006 15-May-2006 20-Jul-2006 20-Dec-2007 24-Mar-2010 Document revision history Revision 4 5 6 7 8 9 10 Preliminary version Complete version Modified value on Figure 8 New dv/dt value on Table 5 The document has been reformatted Updated ID value on Table 2: Absolute maximum ratings Inserted dv/dt value in Table 2: Absolute maximum ratings Changes 16/17 Doc ID 9241 Rev 10 STB/F/P/W11NM80 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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