STH12N120K5-2, STP12N120K5,
STW12N120K5, STWA12N120K5
N-channel 1200 V, 0.62 Ω typ.,12 A MDmesh K5 Power MOSFETs
in H²PAK-2, TO-220, TO-247 and TO-247 long leads
Datasheet - production data
Features
Order codes
VDS
RDS(on) max.
1200 V
0.69 Ω
ID
PTOT
STH12N120K5-2
2
H PAK-2
STP12N120K5
TO-220
STW12N120K5
12 A 250 W
STWA12N120K5
2
3
3
2
1
TO-247 long leads
1
TO-247
Figure 1: Internal schematic diagram
D(TAB)
D(2, TAB)
Worldwide best FOM (figure of merit)
Ultra-low gate charge
100% avalanche tested
Zener-protected
Applications
Switching applications
Description
G(1)
These very high voltage N-channel Power
MOSFETs are designed using MDmesh™ K5
technology based on an innovative proprietary
vertical structure. The result is a dramatic
reduction in on-resistance and ultra-low gate
charge for applications requiring superior power
density and high efficiency.
G(1)
S(2, 3)
2
(H PAK-2)
S(3)
( TO-220, TO-247 and
TO-247 long leads)
Table 1: Device summary
Order code
Marking
2
STH12N120K5-2
STP12N120K5
STW12N120K5
H PAK-2
12N120K5
STWA12N120K5
April 2015
Package
Packing
Tape and reel
TO-220
TO-247
Tube
TO-247 long leads
DocID022133 Rev 4
This is information on a product in full production.
1/21
www.st.com
Contents
STH12N120K5-2, STP12N120K5,
STW12N120K5, STWA12N120K5
Contents
1
Electrical ratings ............................................................................. 3
2
Electrical characteristics ................................................................ 4
2.1
Electrical characteristics (curves) ...................................................... 6
3
Test circuits ..................................................................................... 9
4
Package information ..................................................................... 10
5
2/21
4.1
H²PAK-2 package information ......................................................... 11
4.2
TO-220 type A package information................................................ 14
4.3
TO-247 package information ........................................................... 16
4.4
TO-247 long leads package information ......................................... 18
Revision history ............................................................................ 20
DocID022133 Rev 4
STH12N120K5-2, STP12N120K5,
STW12N120K5, STWA12N120K5
1
Electrical ratings
Electrical ratings
Table 2: Absolute maximum ratings
Symbol
VGS
Parameter
Gate-source voltage
Value
Unit
± 30
V
ID
Drain current at TC = 25 °C
12
A
ID
Drain current at TC = 100 °C
7.6
A
Drain current (pulsed)
48
A
Total dissipation at TC = 25 °C
250
W
4
A
IDM
(1)
PTOT
IAR
(2)
Max current during repetitive or single
pulse avalanche
EAS
(3)
Single pulse avalanche energy
215
mJ
dv/dt
(4)
Peak diode recovery voltage slope
4.5
V/ns
dv/dt
(5)
MOSFET dv/dt ruggedness
50
V/ns
- 55 to 150
°C
Tj
Tstg
Operating junction temperature
Storage temperature
Notes:
(1)
(2)
(3)
Pulse width limited by safe operating area.
Pulse width limited by TJmax.
Starting TJ = 25 °C, ID=IAS, VDD= 50 V
(4)
ISD ≤ 12 A, di/dt ≤ 100 A/µs, VPeak ≤ V(BR)DSS
(5)
VDS ≤ 960 V
Table 3: Thermal data
Value
Symbol
Parameter
2
H PAK-2
TO-220
Rthj-case Thermal resistance junction-case max
Rthj-amb
Thermal resistance junction-amb max
Rthj-pcb
Thermal resistance junction-pcb max
TO-247
TO-247 long leads
0.5
62.5
30
DocID022133 Rev 4
Unit
°C/W
50
°C/W
°C/W
3/21
Electrical characteristics
2
STH12N120K5-2, STP12N120K5,
STW12N120K5, STWA12N120K5
Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 4: On/off states
Symbol
V(BR)DSS
Parameter
Test conditions
Drain-source breakdown
voltage
VGS = 0 V, ID = 1 mA
Min.
Typ.
Max.
Unit
1200
V
VGS = 0 V, VDS = 1200 V
1
µA
VGS = 0, VDS = 1200 V,
Tc = 125 °C
50
µA
±10
µA
4
5
V
0.62
0.69
Ω
Min.
Typ.
Max.
Unit
-
1370
-
pF
-
110
-
pF
-
0.6
-
pF
-
128
-
pF
-
42
-
pF
IDSS
Zero gate voltage drain
current
IGSS
Gate body leakage current
VDS = 0 V, VGS = ± 20 V
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 100 µA
RDS(on)
Static drain-source onresistance
VGS = 10 V, ID= 6 A
3
Table 5: Dynamic
Symbol
Parameter
Ciss
Input capacitance
Coss
Output capacitance
Crss
Reverse transfer
capacitance
Co(tr)
(1)
Co(er)
(2)
Test conditions
VGS = 0 V, VDS = 100 V,
f = 1 MHz
Equivalent capacitance,
time-related
Equivalent capacitance,
energy-related
VGS = 0, VDS = 0 to 960 V
RG
Intrinsic gate resistance
f = 1 MHz, ID = 0 A
-
3
-
Ω
Qg
Total gate charge
-
44.2
-
nC
Qgs
Gate-source charge
-
7.3
-
nC
Qgd
Gate-drain charge
VDD = 960 V, ID = 12 A
VGS = 10 V
(see Figure 18: "Gate
charge test circuit" )
-
30
-
nC
Notes:
(1)
Time-related is defined as a constant equivalent capacitance giving the same charging time as C oss when
VDS increases from 0 to 80% VDSS
(2)
Energy-related is defined as a constant equivalent capacitance giving the same stored energy as C oss when
VDS increases from 0 to 80% VDSS
4/21
DocID022133 Rev 4
STH12N120K5-2, STP12N120K5,
STW12N120K5, STWA12N120K5
Electrical characteristics
Table 6: Switching times
Symbol
td(on)
tr
Parameter
Test conditions
Turn-on delay time
tf
Typ.
Max.
Unit
-
23
-
ns
-
11
-
ns
-
68.5
-
ns
-
18.5
-
ns
VDD = 600 V, ID = 6 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 20: "Unclamped
inductive load test circuit")
Rise time
td(off)
Min.
Turn-off delay time
Fall time
Table 7: Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain current
-
12
A
ISDM
Source-drain current
(pulsed)
-
48
A
ISD = 12 A, VGS = 0 V
-
1.5
V
ISD = 12 A, VDD = 60 V
di/dt = 100 A/µs,
(see Figure 19: "Test circuit
for inductive load switching
and diode recovery times")
-
630
ns
-
12.6
µC
-
40
A
ISD = 12 A,VDD = 60 V
di/dt = 100 A/µs,
Tj = 150 °C
(see Figure 19: "Test circuit
for inductive load switching
and diode recovery times")
-
892
ns
-
15.6
µC
-
35
A
Min
Typ.
(1)
VSD
Forward on voltage
trr
Reverse recovery
time
Qrr
Reverse recovery
charge
IRRM
Reverse recovery
current
trr
Reverse recovery
time
Qrr
Reverse recovery
charge
IRRM
Reverse recovery
current
Notes:
(1)
Pulsed: pulse duration = 300µs, duty cycle 1.5%
Table 8: Gate-source Zener diode
Symbol
V(BR)GSO
Parameter
Test conditions
Gate-source
breakdown voltage
IGS = ±1 mA, ID = 0 A
30
Max.
-
Unit
V
The built-in back-to-back Zener diodes have been specifically designed to enhance the
ESD capability of the device. The Zener voltage is appropriate for efficient and costeffective intervention to protect the device integrity. These integrated Zener diodes thus
eliminate the need for external components.
DocID022133 Rev 4
5/21
Electrical characteristics
2.1
STH12N120K5-2, STP12N120K5,
STW12N120K5, STWA12N120K5
Electrical characteristics (curves)
2
Figure 2: Safe operating area for H PAK-2 and
TO-220
2
Figure 3: Thermal impedance for H PAK-2 and
TO-220
GIPD300320150945MT
ID
(A)
K
δ=0.5
)
10µs
100µs
1ms
DS
(o
n
Op
er
m atio
ite
d n in
by
t
m hi s a
ax
R rea
is
10
10ms
Li
1
0.2
0.1
10 -1 0.05
0.02
Zth= K*Rthj-c
δ= tp/Ƭ
0.1
0.01
Tj=150°C
Tc=25°C
Single pulse
0.01
0.1
Single pulse
10
1
10
100
1000
GIPD300320151033MT
ID
(A)
10 -5
V DS(V)
Figure 4: Safe operating area for TO-247 and
TO-247 long leads
tp
Ƭ
-2
10 -4
10 -3
10 -2
t P (s)
10 -1
Figure 5: Thermal impedance for TO-247 and
TO-247 long leads
GC18460
K
δ=0.5
10µs
0.2
n)
100µs
DS
(o
Op
er
m atio
ite
d n in
by
t
m hi s a
ax
R rea
is
10
0.05
1ms
0.02
10ms
Li
1
0.1
10 -1
0.01
10 -2
Z th= K*R thj-c
δ= t p/Ƭ
Single pulse
0.1
Tj=150°C
Tc=25°C
Single pulse
0.01
0.1
tp
10
1
10
100
1000
V DS(V)
Ƭ
-3
10
Figure 6: Output characteristics
-5
10
-4
10
-3
10
-2
10 -1
t p (s)
Figure 7: Transfer characteristics
GIPD300320151056MT
ID(A)
V GS=9, 10V
GIPD300320151057MT
ID
(A)
V DS=20V
8V
20
20
15
15
7V
10
10
5
5
6V
0
0
0
6/21
5
10
15
V DS(V)
DocID022133 Rev 4
5
6
7
8
9
V GS(V)
STH12N120K5-2, STP12N120K5,
STW12N120K5, STWA12N120K5
Electrical characteristics
Figure 8: Gate charge vs gate-source voltage
GIPD300320151058MT
V DS
V GS
(V)
GIPD300320151223MT
R DS(on)
(Ω)
(V)
V DD=960V
ID=12 A
10
Figure 9: Static drain-source on-resistance
1000
V DS
8
800
6
600
V GS=10V
0.78
0.74
0.7
0.66
4
400
2
200
0
Q g(nC)
0
0
10
20
30
40
Figure 10: Capacitance variations
GIPD300320151226MT
C
(pF)
0.62
0.58
0.54
0
10
5
15
ID(A)
Figure 11: Output capacitance stored energy
GIPD300320151232MT
E oss
(µJ)
10000
20
24
Cies
1000
20
16
100
Coes
12
Cres
8
10
1
4
0.1
0.1
1
10
100
Figure 12: Normalized gate threshold voltage vs
temperature
GIPD300320151241MT
V GS(th)
(norm)
0
V DS(V)
ID=100µ A
0
200
400
800
600
1000
V DS(V)
Figure 13: Normalized on-resistance vs temperature
GIPD300320151244MT
R DS(on)
(norm)
V GS=10V
2.5
1.2
2
1
1.5
0.8
1
0.6
0.4
-75
0.5
-25
25
75
125
T J(°C)
DocID022133 Rev 4
0
-75
-25
25
75
125
T J(°C)
7/21
Electrical characteristics
STH12N120K5-2, STP12N120K5,
STW12N120K5, STWA12N120K5
Figure 15: Source-drain diode forward
characteristics
Figure 14: Normalized V(BR)DSS vs temperature
GIPD300320151249MT
V (BR)DSS
(norm)
GIPD300320151251MT
V SD (V)
T J=-50°C
ID=1m A
0.9
1.08
T J=25°C
0.8
1
0.7
T J=150°C
0.92
0.6
0.84
-75
-25
25
125
75
0.5
T J(°C)
2
4
6
8
10
ISD(A)
Figure 16: Maximum avalanche energy vs starting TJ
GIPD300320151255MT
E AS
(mJ)
ID=12 A
200
V DD=50 V
150
100
50
0
-75
8/21
-25
25
75
125
DocID022133 Rev 4
T J(°C)
STH12N120K5-2, STP12N120K5,
STW12N120K5, STWA12N120K5
3
Test circuits
Test circuits
Figure 17: Switching times test circuit for resistive
load
Figure 18: Gate charge test circuit
VDD
47 k Ω
12 V
1 kΩ
100 nF
I G = CONST
Vi ≤ V GS
100 Ω
D.U.T.
VG
2.7 k Ω
2200 μ F
47 k Ω
1 kΩ
PW
AM01469v 1
Figure 19: Test circuit for inductive load switching
and diode recovery times
A
A
D.U.T.
FAST
DIODE
B
B
Figure 20: Unclamped inductive load test circuit
A
D
G
S
L=100 µH
3.3
µF
B
25 Ω
1000
µF
D
G
RG
VDD
D.U.T.
S
AM01470v1
Figure 21: Unclamped inductive waveform
Figure 22: Switching time waveform
t on
V(BR)DSS
t d(on)
VD
t off
tr
t d(off)
tf
90%
90%
I DM
10%
ID
VDD
10%
0
VDD
VGS
AM01472v 1
0
DocID022133 Rev 4
10%
VDS
90%
AM01473v 1
9/21
Package information
4
STH12N120K5-2, STP12N120K5,
STW12N120K5, STWA12N120K5
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
®
®
ECOPACK packages, depending on their level of environmental compliance. ECOPACK
specifications, grade definitions and product status are available at: www.st.com.
®
ECOPACK is an ST trademark.
10/21
DocID022133 Rev 4
STH12N120K5-2, STP12N120K5,
STW12N120K5, STWA12N120K5
4.1
Package information
H²PAK-2 package information
Figure 23: H²PAK-2 package outline
8159712_D
DocID022133 Rev 4
11/21
Package information
STH12N120K5-2, STP12N120K5,
STW12N120K5, STWA12N120K5
Table 9: H²PAK-2 mechanical data
mm
Dim.
Min.
12/21
Typ.
Max.
A
4.30
4.80
A1
0.03
0.20
C
1.17
1.37
e
4.98
5.18
E
0.50
0.90
F
0.78
0.85
H
10.00
10.40
H1
7.40
L
15.30
L1
1.27
1.40
L2
4.93
5.23
L3
6.85
7.25
L4
1.5
1.7
M
2.6
2.9
R
0.20
0.60
V
0°
8°
DocID022133 Rev 4
-
7.80
15.80
STH12N120K5-2, STP12N120K5,
STW12N120K5, STWA12N120K5
Package information
Figure 24: H²PAK-2 recommended footprint
8159712_D
DocID022133 Rev 4
13/21
Package information
4.2
STH12N120K5-2, STP12N120K5,
STW12N120K5, STWA12N120K5
TO-220 type A package information
Figure 25: TO-220 type A package outline
14/21
DocID022133 Rev 4
STH12N120K5-2, STP12N120K5,
STW12N120K5, STWA12N120K5
Package information
Table 10: TO-220 type A mechanical data
mm
Dim.
Min.
Typ.
Max.
A
4.40
4.60
b
0.61
0.88
b1
1.14
1.70
c
0.48
0.70
D
15.25
D1
15.75
1.27
E
10
10.40
e
2.40
2.70
e1
4.95
5.15
F
1.23
1.32
H1
6.20
6.60
J1
2.40
2.72
L
13
14
L1
3.50
3.93
L20
16.40
L30
28.90
øP
3.75
3.85
Q
2.65
2.95
DocID022133 Rev 4
15/21
Package information
4.3
STH12N120K5-2, STP12N120K5,
STW12N120K5, STWA12N120K5
TO-247 package information
Figure 26: TO-247 package outline
16/21
DocID022133 Rev 4
STH12N120K5-2, STP12N120K5,
STW12N120K5, STWA12N120K5
Package information
Table 11: TO-247 mechanical data
mm.
Dim.
Min.
Typ.
Max.
A
4.85
5.15
A1
2.20
2.60
b
1.0
1.40
b1
2.0
2.40
b2
3.0
3.40
c
0.40
0.80
D
19.85
20.15
E
15.45
15.75
e
5.30
L
14.20
14.80
L1
3.70
4.30
L2
5.45
5.60
18.50
ØP
3.55
3.65
ØR
4.50
5.50
S
5.30
DocID022133 Rev 4
5.50
5.70
17/21
Package information
4.4
STH12N120K5-2, STP12N120K5,
STW12N120K5, STWA12N120K5
TO-247 long leads package information
Figure 27: TO-247 long leads package outline
18/21
DocID022133 Rev 4
STH12N120K5-2, STP12N120K5,
STW12N120K5, STWA12N120K5
Package information
Table 12: TO-247 long leads mechanical data
mm.
Dim.
Min.
Typ.
Max.
A
4.90
5.00
5.10
A1
2.31
2.41
2.51
A2
1.90
2.00
2.10
b
1.16
1.26
b2
3.25
b3
2.25
c
0.59
0.66
D
20.90
21.00
21.10
E
15.70
15.80
15.90
E2
4.90
5.00
5.10
E3
2.40
2.50
2.60
e
5.34
5.44
5.54
L
19.80
19.92
20.10
L1
4.30
P
3.50
Q
5.60
S
6.05
DocID022133 Rev 4
3.60
3.70
6.00
6.15
6.25
19/21
Revision history
5
STH12N120K5-2, STP12N120K5,
STW12N120K5, STWA12N120K5
Revision history
Table 13: Document revision history
Date
Revision
23-Aug-2011
1
17-Jan-2013
2
Changes
First release.
16-May-2014
3
08-Apr-2015
4
Minor text changes
2
Added: H PAK package
The part number STB12N120K5 has been moved to a
separate datasheet
Updated:
Updated: mechanical data for TO-247 package
The part numbers STFW12N120K5 has been moved to
a separate datasheet
Added: TO-247 long leads package
Modified: IAR, EAS, dv/dt values in Table 2: "Absolute
maximum ratings"
Modified: the entire typical values in Table 5: "Dynamic",
Table 6: "Switching times" and Table 7: "Source drain
diode"
Added: Section 2.1: "Electrical characteristics (curves)"
Minor text changes
Updated title, silhouette and description in cover page.
Updated Table 4: "On/off states", Table 5: "Dynamic", Figure
9: "Static drain-source on-resistance" and Figure 10:
"Capacitance variations".
Minor text change.
20/21
DocID022133 Rev 4
STH12N120K5-2, STP12N120K5, STW12N120K5,
STWA12N120K5
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DocID022133 Rev 4
21/21