STP13NK60ZFP

STP13NK60Z/FP, STB13NK60Z STB13NK60Z-1, STW13NK60Z N-CHANNEL 600V-0.48Ω-13A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH™Power MOSFET TYPE STP13NK60Z STP13NK60ZFP STB13NK60Z STB13NK60Z-1 STW13NK60Z s s s s s s VDSS 600 600 600 600 600 V V V V V RDS(on) < 0.55 Ω < 0.55 Ω < 0.55 Ω < 0.55 Ω < 0.55 Ω ID 13 13 13 13 13 A A A A A Pw 150 W 35 W 150 W 150 W 150 W TO-220 3 1 2 TYPICAL RDS(on) = 0.48 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY TO-220FP 3 2 1 TO-247 3 12 3 1 D2PAK I2PAK DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC s LIGHTING s ORDERING INFORMATION SALES TYPE STP13NK60Z STP13NK60ZFP STB13NK60ZT4 STB13NK60Z STB13NK60Z-1 STW13NK60Z February 2003 MARKING P13NK60Z P13NK60ZFP B13NK60Z B13NK60Z B13NK60Z W13NK60Z PACKAGE TO-220 TO-220FP D2PAK D2PAK I2PAK TO-247 PACKAGING TUBE TUBE TAPE & REEL TUBE (ONLY UNDER REQUEST) TUBE TUBE 1/14 STP13NK60Z, STP13NK60ZFP, STB13NK60Z, STB13NK60Z-1, STW13NK60Z ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value STP13NK60Z STB13NK60Z/-1 STW13NK60Z STP13NK60ZFP Unit VDS VDGR VGS ID ID IDM ( ) PTOT VESD(G-S) dv/dt (1) VISO Tj Tstg Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Gate source ESD(HBM-C=100pF, R=1.5KΩ) Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Operating Junction Temperature Storage Temperature 13 8.2 52 150 1.20 600 600 ± 30 13 (*) 8.2 (*) 52 (*) 35 0.27 4000 4.5 2500 -55 to 150 V V V A A A W W/°C V V/ns V °C ( ) Pulse width limited by safe operating area (1) ISD ≤13 A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. (*) Limited only by maximum temperature allowed THERMAL DATA TO-220 I2PAK TO-247 Rthj-case Rthj-pcb Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-pcb Max (#) Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 0.83 60 62.5 300 D2PAK TO-220FP 3.6 °C/W °C/W °C/W °C AVALANCHE CHARACTERISTICS Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) Max Value 10 400 Unit A mJ GATE-SOURCE ZENER DIODE Symbol BVGSO Parameter Gate-Source Breakdown Voltage Test Conditions Igs=± 1mA (Open Drain) Min. 30 Typ. Max. Unit V (#) When mounted on minimum Footprint PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 2/14 STP13NK60Z, STP13NK60ZFP, STB13NK60Z, STB13NK60Z-1, STW13NK60Z ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) ON/OFF Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Gate Threshold Voltage Static Drain-source On Resistance Test Conditions ID = 1 mA, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 °C VGS = ± 20 V VDS = VGS, ID = 100 µA VGS = 10 V, ID = 5 A 3 3.75 0.48 Min. 600 1 50 ±10 4.5 0.55 Typ. Max. Unit V µA µA µA V Ω DYNAMIC Symbol gfs (1) Ciss Coss Crss Coss eq. (3) Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Equivalent Output Capacitance Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDS = 8 V, ID = 5 A VDS = 25 V, f = 1 MHz, VGS = 0 Min. Typ. 11 2030 210 48 125 Max. Unit S pF pF pF pF VGS = 0V, VDS = 0V to 480 V SWITCHING ON Symbol td(on) tr Qg Qgs Qgd Test Conditions VDD = 300 V, ID = 5 A RG = 4.7Ω VGS = 10 V (Resistive Load see, Figure 3) VDD = 480 V, ID = 10 A, VGS = 10 V Min. Typ. 22 14 66 11 33 92 Max. Unit ns ns nC nC nC SWITCHING OFF Symbol td(off) tf tr(Voff) tf tc Parameter Turn-off Delay Time Fall Time Off-voltage Rise Time Fall Time Cross-over Time Test Conditions VDD = 300 V, ID = 5 A RG = 4.7Ω VGS = 10 V (Resistive Load see, Figure 3) VDD = 480V, ID = 10 A, RG = 4.7Ω, VGS = 10V (Inductive Load see, Figure 5) Min. Typ. 61 12 10 9 20 Max. Unit ns ns ns ns ns SOURCE DRAIN DIODE Symbol ISD ISDM (2) VSD (1) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 10 A, VGS = 0 ISD = 10 A, di/dt = 100 A/µs VDD = 35 V, Tj = 150°C (see test circuit, Figure 5) 570 4.5 16 Test Conditions Min. Typ. Max. 10 40 1.6 Unit A A V ns µC A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. 3/14 STP13NK60Z, STP13NK60ZFP, STB13NK60Z, STB13NK60Z-1, STW13NK60Z Safe Operating Area For TO-220/D2PAK/I2PAK Thermal Impedance For TO-220/D2PAK/I2PAK Safe Operating Area For TO-220FP Thermal Impedance For TO-220FP Safe Operating Area For TO-247 Thermal Impedance For TO-247 4/14 STP13NK60Z, STP13NK60ZFP, STB13NK60Z, STB13NK60Z-1, STW13NK60Z Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 5/14 STP13NK60Z, STP13NK60ZFP, STB13NK60Z, STB13NK60Z-1, STW13NK60Z Normalized Gate Threshold Voltage vs Temp. Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics Normalized BVDSS vs Temperature Maximum Avalanche Energy vs Temperature 6/14 STP13NK60Z, STP13NK60ZFP, STB13NK60Z, STB13NK60Z-1, STW13NK60Z Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 7/14 STP13NK60Z, STP13NK60ZFP, STB13NK60Z, STB13NK60Z-1, STW13NK60Z TO-220 MECHANICAL DATA DIM. MIN. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA. 13.0 2.65 15.25 6.2 3.5 3.75 0.49 0.61 1.14 1.14 4.95 2.4 10.0 16.4 14.0 2.95 15.75 6.6 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 4.40 1.23 2.40 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 0.551 0.116 0.620 0.260 0.154 0.151 mm TYP. MAX. 4.60 1.32 2.72 MIN. 0.173 0.048 0.094 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 inch TYP. MAX. 0.181 0.051 0.107 A C D1 L2 D F1 G1 E Dia. L5 L7 L6 L4 P011C L9 8/14 F2 F G H2 STP13NK60Z, STP13NK60ZFP, STB13NK60Z, STB13NK60Z-1, STW13NK60Z TO-220FP MECHANICAL DATA mm. MIN. 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 28.6 9.8 2.9 15.9 9 3 30.6 10.6 3.6 16.4 9.3 3.2 1.126 .0385 0.114 0.626 0.354 0.118 TYP MAX. 4.6 2.7 2.75 0.7 1 1.5 1.5 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.141 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 DIM. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 Ø A B L3 L6 L7 ¯ F1 F D G1 H F2 L2 L5 E 123 L4 G 9/14 STP13NK60Z, STP13NK60ZFP, STB13NK60Z, STB13NK60Z-1, STW13NK60Z D2PAK MECHANICAL DATA mm. DIM. MIN. A A1 A2 B B2 C C2 D D1 E E1 G L L2 L3 M R V2 0º 4.88 15 1.27 1.4 2.4 0.4 8º 10 8.5 5.28 15.85 1.4 1.75 3.2 0.192 0.590 0.050 0.055 0.094 0.015 4.4 2.49 0.03 0.7 1.14 0.45 1.23 8.95 8 10.4 0.393 0.334 0.208 0.625 0.055 0.068 0.126 TYP MAX. 4.6 2.69 0.23 0.93 1.7 0.6 1.36 9.35 MIN. 0.173 0.098 0.001 0.027 0.044 0.017 0.048 0.352 0.315 TYP. MAX. 0.181 0.106 0.009 0.036 0.067 0.023 0.053 0.368 inch 10/14 3 1 STP13NK60Z, STP13NK60ZFP, STB13NK60Z, STB13NK60Z-1, STW13NK60Z TO-262 (I2PAK) MECHANICAL DATA mm MIN. A A1 B B2 C C2 D e E L L1 L2 4.4 2.49 0.7 1.14 0.45 1.23 8.95 2.4 10 13.1 3.48 1.27 TYP. MAX. 4.6 2.69 0.93 1.7 0.6 1.36 9.35 2.7 10.4 13.6 3.78 1.4 MIN. 0.173 0.098 0.027 0.044 0.017 0.048 0.352 0.094 0.393 0.515 0.137 0.050 inch TYP. MAX. 0.181 0.106 0.036 0.067 0.023 0.053 0.368 0.106 0.409 0.531 0.149 0.055 DIM. A C2 B2 B E L1 L2 D L P011P5/E e A1 C 11/14 STP13NK60Z, STP13NK60ZFP, STB13NK60Z, STB13NK60Z-1, STW13NK60Z TO-247 MECHANICAL DATA mm. MIN. 4.85 2.20 0.40 1 3 2 2 3 10.90 15.45 19.85 3.70 18.50 14.20 34.60 5.50 2 5º 60º 3.55 3.65 0.14 3 0.07 5º 60º 0.143 14.80 0.56 1.36 0.21 0.11 15.75 20.15 4.30 0.60 0.78 0.14 0.72 0.58 2.40 3.40 0.07 0.11 0.43 0.62 0.79 0.17 TYP MAX. 5.15 2.60 0.80 1.40 MIN. 0.19 0.08 0.015 0.04 0.11 0.07 0.09 0.13 inch TYP. MAX. 0.20 0.10 0.03 0.05 DIM. A D E F F1 F2 F3 F4 G H L L1 L2 L3 L4 L5 M V V2 Dia 12/14 STP13NK60Z, STP13NK60ZFP, STB13NK60Z, STB13NK60Z-1, STW13NK60Z D2PAK FOOTPRINT TUBE SHIPMENT (no suffix)* TAPE AND REEL SHIPMENT (suffix ”T4”)* REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 24.4 100 30.4 26.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0795 0.960 1.039 3.937 1.197 BULK QTY 1000 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T W mm MIN. 10.5 15.7 1.5 1.59 1.65 11.4 4.8 3.9 11.9 1.9 50 0.25 23.7 24.3 MAX. 10.7 15.9 1.6 1.61 1.85 11.6 5.0 4.1 12.1 2.1 inch MIN. MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574 0.35 0.0098 0.0137 0.933 0.956 BASE QTY 1000 * on sales type 13/14 STP13NK60Z, STP13NK60ZFP, STB13NK60Z, STB13NK60Z-1, STW13NK60Z Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. © The ST logo is a registered trademark of STMicroelectronics © 2003 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. © http://www.st.com 14/14