STP140N6F7

STP140N6F7 N-channel 60 V, 0.0031 Ω typ., 80 A STripFET™ F7 Power MOSFET in a TO-220 package Datasheet - production data Features Order code VDS RDS(on) max. ID PTOT STP140N6F7 60 V 0.0035 Ω 80 A 158 W • • • • Among the lowest RDS(on) on the market Excellent figure of merit (FoM) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness Applications • Figure 1: Internal schematic diagram Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Table 1: Device summary Order code Marking Package Packing STP140N6F7 140N6F7 TO-220 Tube May 2015 DocID027726 Rev 2 This is information on a product in full production. 1/12 www.st.com Contents STP140N6F7 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 5 3 Test circuits ..................................................................................... 7 4 Package information ....................................................................... 8 4.1 5 2/12 TO-220 type A package information.................................................. 9 Revision history ............................................................................ 11 DocID027726 Rev 2 STP140N6F7 1 Electrical ratings Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 60 V VGS Gate-source voltage ±20 V Drain current (continuous) at Tcase = 25 °C 80 Drain current (continuous) at Tcase = 100 °C 80 IDM Drain current (pulsed) 320 A PTOT Total dissipation at Tcase = 25 °C 158 W (3) EAS Single pulse avalanche energy 160 mJ (1) ID (2) Tstg Tj Storage temperature -55 to 175 Maximum junction temperature 175 A °C Notes: (1) (2) (3) Current is limited by package. Pulse width is limited by safe operating area. Starting Tj = 25°C, ID = 40 A, VDD = 30 V. Table 3: Thermal data Symbol Parameter Rthj-case Thermal resistance junction-case 0.95 Rthj-amb Thermal resistance junction-ambient 62.5 DocID027726 Rev 2 Value Unit °C/W 3/12 Electrical characteristics 2 STP140N6F7 Electrical characteristics (Tcase = 25 °C unless otherwise specified) Table 4: Static Symbol Parameter Test conditions V(BR)DSS Drain-source breakdown voltage VGS = 0 V, ID = 1 mA Min. Typ. Max. 60 Unit V VGS = 0 V, VDS = 60 V 1 VGS = 0 V, VDS = 60 V, Tcase = 125 °C 100 100 nA 4 V 0.0031 0.0035 Ω Min. Typ. Max. - 3100 - - 1520 - - 193 - - 55 - - 19 - - 18 - Test conditions Min. Typ. Max. VDD = 30 V, ID = 40 A RG = 4.7 Ω, VGS = 10 V (see Figure 13: "Switching times test circuit for resistive load" and Figure 18: "Switching time waveform") - 24 - - 68 - - 39 - - 20 - Min. Typ. Max. Unit 1.2 V IDSS Zero gate voltage drain current IGSS Gate-body leakage current VDS = 0 V, VGS = +20 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source onresistance VGS = 10 V, ID = 40 A 2 µA Table 5: Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Test conditions VDS = 25 V, f = 1 MHz, VGS = 0 V VDD = 30 V, ID = 80 A, VGS = 10 V (see Figure 14: "Gate charge test circuit") Unit pF nC Table 6: Switching times Symbol td(on) tr td(off) tf Parameter Turn-on delay time Rise time Turn-off delay time Fall time Unit ns Table 7: Source-drain diode Symbol (1) VSD Parameter Test conditions Forward on voltage VGS = 0 V, ISD = 80 A - trr Reverse recovery time - 42.4 ns Qrr Reverse recovery charge - 38.2 nC IRRM Reverse recovery current ISD = 80 A, di/dt = 100 A/µs, VDD = 48 V (see Figure 15: "Test circuit for inductive load switching and diode recovery times") - 1.8 A Notes: (1) 4/12 Pulse test: pulse duration = 300 µs, duty cycle 1.5%. DocID027726 Rev 2 STP140N6F7 2.1 Electrical characteristics Electrical characteristics (curves) Figure 2: Safe operating area Figure 3: Thermal impedance Figure 4: Output characteristics Figure 5: Transfer characteristics Figure 6: Gate charge vs gate-source voltage Figure 7: Static drain-source on-resistance DocID027726 Rev 2 5/12 Electrical characteristics STP140N6F7 Figure 8: Capacitance variations Figure 9: Normalized gate threshold voltage vs temperature Figure 10: Normalized on-resistance vs temperature Figure 11: Normalized V(BR)DSS vs temperature Figure 12: Source-drain diode forward characteristics 6/12 DocID027726 Rev 2 STP140N6F7 3 Test circuits Test circuits Figure 13: Switching times test circuit for resistive load Figure 14: Gate charge test circuit VDD 47 k Ω 12 V 1 kΩ 100 nF I G = CONST Vi ≤ V GS 100 Ω D.U.T. 2.7 k Ω 2200 μ F VG 47 k Ω 1 kΩ PW AM01469v 1 Figure 15: Test circuit for inductive load switching and diode recovery times A A D.U.T. FAST DIODE B B Figure 16: Unclamped inductive load test circuit A D G S 25 Ω L=100 µH 3.3 µF B 1000 µF D G RG VDD D.U.T. S AM01470v1 Figure 18: Switching time waveform Figure 17: Unclamped inductive waveform toff t on V(BR)DSS t d(on) tr t d(off) tf VD 90% 90% I DM 10% VDD 10% 0 ID VDD AM01472v 1 VGS 0 DocID027726 Rev 2 10% VDS 90% AM01473v 1 7/12 Package information 4 STP140N6F7 Package information In order to meet environmental requirements, ST offers these devices in different grades of ® ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ® ECOPACK is an ST trademark. 8/12 DocID027726 Rev 2 STP140N6F7 4.1 Package information TO-220 type A package information Figure 19: TO-220 type A package outline DocID027726 Rev 2 9/12 Package information STP140N6F7 Table 8: TO-220 type A mechanical data mm Dim. Min. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 10/12 Typ. 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 øP 3.75 3.85 Q 2.65 2.95 DocID027726 Rev 2 STP140N6F7 5 Revision history Revision history Table 9: Document revision history Date Revision 07-Apr-2015 1 19-May-2015 2 Changes First release. In section 2.1 Electrical characteristics (curves): - updated Figure 8: Capacitance variations DocID027726 Rev 2 11/12 STP140N6F7 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2015 STMicroelectronics – All rights reserved 12/12 DocID027726 Rev 2