STP15N60M2-EP

STP15N60M2-EP N-channel 600 V, 0.340 Ω typ., 11 A MDmesh™ M2 EP Power MOSFET in a TO-220 package Datasheet - production data Features Order code VDS @ TJmax RDS(on) max. ID STP15N60M2-EP 650 V 0.378 Ω 11 A      Extremely low gate charge Excellent output capacitance (COSS) profile Very low turn-off switching losses 100% avalanche tested Zener-protected Applications   Figure 1: Internal schematic diagram Switching applications Tailored for very high frequency converters (f > 150 kHz) D(2, TAB) Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 EP enhanced performance technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance, optimized switching characteristics with very low turn-off switching losses, rendering it suitable for the most demanding very high frequency converters. G(1) S(3) AM01476v1_tab Table 1: Device summary Order code Marking Package Packaging STP15N60M2-EP 15N60M2EP TO-220 Tube December 2014 DocID027298 Rev 2 This is information on a product in full production. 1/14 www.st.com Contents STP15N60M2-EP Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package mechanical data ............................................................. 10 4.1 5 2/14 TO-220 type A package information................................................ 11 Revision history ............................................................................ 13 DocID027298 Rev 2 STP15N60M2-EP 1 Electrical ratings Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter VGS Gate-source voltage Value Unit ± 25 V ID Drain current (continuous) at TC = 25 °C 11 A ID Drain current (continuous) at TC = 100 °C 7 A IDM(1) Drain current (pulsed) 44 A PTOT Total dissipation at TC = 25 °C 110 W dv/dt(2) Peak diode recovery voltage slope 15 V/ns dv/dt(3) MOSFET dv/dt ruggedness 50 V/ns - 55 to 150 °C Tstg Storage temperature Tj Max. operating junction temperature Notes: (1)Pulse (2)I SD (3)V width limited by safe operating area. ≤ 11 A, di/dt ≤ 400 A/µs; VDS peak < V(BR)DSS, VDD = 400 V. DS ≤ 480 V Table 3: Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case max 1.14 °C/W Rthj-amb Thermal resistance junction-ambient max 62.5 °C/W Table 4: Avalanche characteristics Symbol Parameter Value Unit IAR Avalanche current, repetetive or not repetetive (pulse width limited by Tjmax) 2.8 A EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR; VDD = 50 V) 125 mJ DocID027298 Rev 2 3/14 Electrical characteristics 2 STP15N60M2-EP Electrical characteristics TC = 25 °C unless otherwise specified Table 5: On/off states Symbol Parameter Test conditions V(BR)DSS Drain-source breakdown voltage IDSS Zero gate voltage Drain current IGSS VGS = 0 V, ID = 1 mA Min. Typ. Max. 600 Unit V VGS = 0 V, VDS = 600 V 1 µA VGS = 0 V, VDS = 600 V, TC = 125 °C 100 µA Gate-body leakage current VDS = 0 V, VGS = ±25 V ±10 µA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 3 4 V RDS(on) Static drain-source onresistance VGS = 10 V, ID = 5.5 A 0.340 0.378 Ω Min. Typ. Max. Unit - 590 - pF - 30 - pF - 1.1 - pF 2 Table 6: Dynamic Symbol Parameter Test conditions Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Coss eq.(1) Equivalent output capacitance VDS = 0 to 480 V, VGS = 0 V - 148 - pF RG Intrinsic gate resistance f = 1 MHz, ID = 0 A - 7 - Ω Qg Total gate charge - 17 - nC - 3.1 - nC - 7.3 - nC Qgs Gate-source charge Qgd Gate-drain charge VDS= 100 V, f = 1 MHz, VGS = 0 V VDD = 480 V, ID = 11 A, VGS = 10 V (see Figure 15: "Gate charge test circuit") Notes: (1)C oss eq. is defined as a constant equivalent capacitance giving the same charging time as C oss when VDS increases from 0 to 80% VDSS Table 7: Switching energy Symbol E(off) 4/14 Parameter Test conditions Turn-off energy (from 90% VGS to 0% ID) Min. Typ. Max. Unit VDD = 400 V, ID = 1.5 A RG = 4.7 Ω, VGS = 10 V - 4.7 - µJ VDD = 400 V, ID = 3.5 A RG = 4.7 Ω, VGS = 10 V - 5.2 - µJ DocID027298 Rev 2 STP15N60M2-EP Electrical characteristics Table 8: Switching times Symbol Parameter Turn-on delay time td(on) tr Rise time td(off) Turn-offdelay time tf Test conditions VDD = 300 V, ID = 5.5 A RG = 4.7 Ω, VGS = 10 V (see Figure 14: "Switching times test circuit for resistive load" and Figure 19: "Switching time waveform") Fall time Min. Typ. Max. Unit - 11 - ns - 10 - ns - 40 - ns - 15 - ns Min. Typ. Max. Unit Table 9: Source drain diode Symbol Parameter Test conditions ISD Source-drain current - 11 A ISDM(1) Source-drain current (pulsed) - 44 A VSD (2) Forward on voltage - 1.6 V trr Reverse recovery time Qrr Reverse recovery charge IRRM VGS = 0 V, ISD = 11 A - 280 ns - 2.7 µC Reverse recovery current - 19.5 A trr Reverse recovery time - 400 ns Qrr Reverse recovery charge - 3.8 µC IRRM Reverse recovery current - 19 A ISD = 11 A, di/dt = 100 A/µs, VDD = 60 V (see Figure 16: " Test circuit for inductive load switching and diode recovery times") ISD = 11 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C (see Figure 16: " Test circuit for inductive load switching and diode recovery times") Notes: (1)Pulse width is limited by safe operating area (2)Pulsed: pulse duration = 300 µs, duty cycle 1.5% DocID027298 Rev 2 5/14 Electrical characteristics 2.2 STP15N60M2-EP Electrical characteristics (curves) Figure 2: Safe operating area Figure 3: Thermal impedance GIPG121220141404MT ID (A) CG20930 K δ = 0.5 n) is δ = 0.2 (o 10µs DS Op Lim erat ite ion d b in y m this ax are a R 10 δ = 0.1 100µs 10 -1 Z Zthth = = kk R R thj-C thj-C δ δ= = ttp // Ƭ Ƭ 1ms 1 p δ = 0.05 δ = 0.02 δ = 0.01 10ms Tj=150°C Tc=25°C Single pulse 0.1 0.1 1 10 V DS(V) 100 10 -2 10 -5 Figure 4: Output characteristics GIPG121220141416MT ID(A) V GS=7, 8, 9, 10V 15 10 -4 10 -3 10 -2 Ƭ Ƭ tp(s) 10 -1 Figure 5: Transfer characteristics GIPG121220141419MT ID (A) V DS=17V 6V 20 tpp SINGLE PULSE 20 15 5V 10 10 4V 5 5 0 0 0 4 8 12 16 V DS(V) Figure 6: Normalized gate threshold voltage vs temperature VGS(th) (norm) GIPG181120141615ALS 0 2 4 6 8 V GS(V) Figure 7: Normalized V(BR)DSS vs. temperature V(BR)DSS GIPG191120141457ALS (norm) 1.08 1.1 ID = 250 µA 1.0 1.04 0.9 1.00 0.8 0.96 0.7 0.92 0.6 -75 6/14 -25 25 75 125 TJ(°C) DocID027298 Rev 2 0.88 -75 ID = 1mA -25 25 75 125 TJ(°C) STP15N60M2-EP Electrical characteristics Figure 8: Static drain-source on-resistance GIPG121220141431MT R DS(on) (Ω) V GS=10V 0.360 Figure 9: Normalized on-resistance vs temperature GIPG181120141628ALS RDS(on) (norm) 2.2 1.8 0.350 VGS = 10 V 1.4 0.340 1.0 0.330 0.6 0.320 0 2 4 6 10 8 ID(A) Figure 10: Gate charge vs. gate-source voltage GIPG121220141425MT V DS V GS (V) (V) V DD=480V ID=11A 12 600 10 V DS 0.2 -75 25 -25 75 TJ(°C) 125 Figure 11: Capacitance variations GIPG121220141441MT C (pF) 1000 Ciss 500 100 8 400 6 300 4 200 2 100 Coss 10 Crss 1 0.1 0 Q g(nC) 0 0 16 12 8 4 Figure 12: Turn-off switching loss vs drain current GIPG121220141453MT E off (µJ) 0.1 1 100 10 V DS(V) Figure 13: Source-drain diode forward characteristic GIPG161220141014MT V SD(V) 1.1 T J=-50°C 5.4 VDD=400V, RG=4,7Ω,VGS=10V 1 5.2 0.9 T J=25°C 5 0.8 4.8 T J=150°C 0.7 4.6 0.6 4.4 0.5 1 1.5 2 2.5 3 3.5 ID(A) DocID027298 Rev 2 0.5 0 2 4 6 8 10 ISD(A) 7/14 Test circuits 3 STP15N60M2-EP Test circuits Figure 14: Switching times test circuit for resistive load Figure 15: Gate charge test circuit VDD 12 V 47 k Ω 1 kΩ 100 nF I G = CONST Vi ≤ V GS 100 Ω D.U.T. VG 2.7 k Ω 2200 μ F 47 k Ω PW 1 kΩ AM01469v 1 Figure 16: Test circuit for inductive load switching and diode recovery times 8/14 Figure 17: Unclamped inductive load test circuit DocID027298 Rev 2 STP15N60M2-EP Test circuits Figure 19: Switching time waveform Figure 18: Unclamped inductive waveform t on V(BR)DSS t d(on) t off tr t d(off) tf VD 90% 90% I DM 10% 0 ID VDD 10% VDD AM01472v 1 DocID027298 Rev 2 VGS 0 10% VDS 90% AM01473v 1 9/14 Package mechanical data 4 STP15N60M2-EP Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 10/14 DocID027298 Rev 2 STP15N60M2-EP 4.1 Package mechanical data TO-220 type A package information Figure 20: TO-220 type A package outline DocID027298 Rev 2 11/14 Package mechanical data STP15N60M2-EP Table 10: TO-220 type A mechanical data mm Dim. Min. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 12/14 Typ. 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 øP 3.75 3.85 Q 2.65 2.95 DocID027298 Rev 2 STP15N60M2-EP 5 Revision history Revision history Table 11: Document revision history Date Revision 15-Dec-2014 1 First release. 2 Document status promoted from preliminary data to production data. Updated Table 6: "Dynamic". Minor text changes. 18-Dec-2014 Changes DocID027298 Rev 2 13/14 STP15N60M2-EP IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2014 STMicroelectronics – All rights reserved 14/14 DocID027298 Rev 2