STP15N95K5

STF15N95K5, STP15N95K5, STW15N95K5 N-channel 950 V, 0.41 Ω typ., 12 A SuperMESH™ 5 Power MOSFETs in TO-220FP, TO-220 and TO-247 packages Datasheet - production data Features Order codes VDS RDS(on)max ID PTOT STF15N95K5 30 W 3 2 1 STP15N95K5 TO-220FP STW15N95K5 950 V 0.5 Ω 12 A 170 W TAB • TO-220 worldwide best RDS(on) • Worldwide best FOM (figure of merit) • Ultra low gate charge 3 1 2 3 2 1 TO-220 TO-247 • 100% avalanche tested • Zener-protected Figure 1. Internal schematic diagram D(2,TAB) Applications • Switching applications Description G(1) S(3) AM01476v1 These devices are N-channel Power MOSFETs developed using SuperMESH™ 5 technology. This revolutionary, avalanche-rugged, high voltage Power MOSFET technology is based on an innovative proprietary vertical structure. The result is a drastic reduction in on-resistance and ultra low gate charge for applications which require superior power density and high efficiency. Table 1. Device summary Order codes Marking Package STF15N95K5 15N95K5 TO-220FP STP15N95K5 15N95K5 TO-220 STW15N95K5 15N95K5 TO-247 February 2014 This is information on a product in full production. DocID025280 Rev 2 Packaging Tube 1/18 www.st.com 18 Contents STF15N95K5, STP15N95K5, STW15N95K5 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 2/18 .............................................. 9 DocID025280 Rev 2 STF15N95K5, STP15N95K5, STW15N95K5 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter Unit TO-220 TO-220FP TO-247 VGS ID ID IDM (2) PTOT Gate- source voltage ± 30 V (1) A 7.6 7.6 (1) A Drain current (pulsed) 48 48(1) A Total dissipation at TC = 25 °C 170 30 W Drain current (continuous) at TC = 25 °C 12 Drain current (continuous) at TC = 100 °C IAR Max current during repetitive or single pulse avalanche (pulse width limited by Tjmax) EAS Single pulse avalanche energy (starting TJ = 25 °C, ID=IAS, VDD= 50 V) ESD Gate-source human body model (R= 1,5 kΩ, C = 100 pF) VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s;TC=25 °C) 12 4 A 124 mJ 2 kV 2500 V dv/dt (3) Peak diode recovery voltage slope 4.5 V/ns dv/dt (4) MOSFET dv/dt ruggedness 50 V/ns -55 to 150 °C Tj Tstg Operating junction temperature Storage temperature 1. Limited by maximum junction temperature. 2. Pulse width limited by safe operating area. 3. ISD ≤ 12, di/dt ≤ 100 A/μs, VDS(peak) ≤ V(BR)DSS 4. VDS ≤ 760 V Table 3. Thermal data Value Symbol Parameter Unit TO-220 Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-amb max DocID025280 Rev 2 TO-247 0.74 62.5 50 TO-220FP 4.2 °C/W 62.5 °C/W 3/18 Electrical characteristics 2 STF15N95K5, STP15N95K5, STW15N95K5 Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 4. On/off states Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage ID = 1 mA, VGS= 0 Min. Typ. Max. Unit 950 V VDS = 950 V, 1 μA VDS = 950 V, Tc=125 °C 50 μA Gate body leakage current (VDS = 0) VGS = ± 20 V ±10 μA VGS(th) Gate threshold voltage VDS = VGS, ID = 100 μA 4 5 V RDS(on) Static drain-source on-resistance VGS = 10 V, ID= 6 A 0.41 0.50 Ω Min. Typ. Max. Unit - 855 - pF - 65 pF pF IDSS IGSS Zero gate voltage drain current (VGS = 0) 3 Table 5. Dynamic Symbol Parameter Test conditions Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance - 1 Co(tr)(1) Equivalent capacitance time related - 104 - pF Co(er)(2) Equivalent capacitance energy related - 38 - pF RG Intrinsic gate resistance f = 1 MHz open drain - 6 - Ω Qg Total gate charge - 30 - nC Qgs Gate-source charge - 5 - nC Qgd Gate-drain charge VDD = 760 V, ID = 12 A VGS =10 V (see Figure 20) - 22 - nC VDS =100 V, f=1 MHz, VGS=0 VGS = 0, VDS = 0 to 760 V 1. Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 2. energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS increases from 0 to 80% VDSS 4/18 DocID025280 Rev 2 STF15N95K5, STP15N95K5, STW15N95K5 Electrical characteristics Table 6. Switching times Symbol td(v) Parameter Voltage delay time tr(v) Voltage rise time tf(i) Current fall time tc(off) Test conditions VDD = 475 V, ID = 6 A, RG=4.7 Ω, VGS=10 V (see Figure 22) Crossing time Min. Typ. Max. Unit - 23 - ns - 20 - ns - 62 - ns - 11 - ns Min. Typ. Max. Unit - 12 48 A A 1.5 V Table 7. Source drain diode Symbol ISD ISDM VSD(1) 1. Parameter Test conditions Source-drain current Source-drain current (pulsed) Forward on voltage ISD= 12 A, VGS=0 - trr Reverse recovery time - 444 ns Qrr Reverse recovery charge - 7 μC IRRM Reverse recovery current ISD= 12 A, VDD= 60 V di/dt = 100 A/μs, (see Figure 21) - 32 A - 630 ns - 9.2 μC - 29 A Min. Typ. Max. Unit 30 - - V trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current ISD= 12 A,VDD= 60 V di/dt=100 A/μs, Tj=150 °C(see Figure 21) Pulsed: pulse duration = 300μs, duty cycle 1.5% Table 8. Gate-source Zener diode Symbol Parameter Test conditions V(BR)GSO Gate-source breakdown voltage IGS= ± 1 mA, ID= 0 The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. DocID025280 Rev 2 5/18 Electrical characteristics 2.1 STF15N95K5, STP15N95K5, STW15N95K5 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220FP AM18027v1 ID (A) 10 in 1 Figure 3. Thermal impedance for TO-220FP i th is ea ) a r S(on D R ax 10µs s 100µs n m tio by ra pe ited O m Li 1ms 10ms 0.1 Tj=150°C Tc=25°C Single pulse 0.01 0.1 1 10 100 VDS(V) Figure 4. Safe operating area for TO-220 AM18028v1 n) (o 10µs 100µs DS Op Lim era ite tion d by in th ma is a x R re a is ID (A) 10 Figure 5. Thermal impedance for TO-220 1ms 1 10ms Tj=150°C Tc=25°C Single pulse 0.1 0.1 1 10 100 VDS(V) Figure 6. Safe operating area for TO-247 Figure 7. Thermal impedance for TO-247 AM18029v1 ID (A) 10 (o n) 100µs DS Op Lim era ite tion d by in th ma is a x R re a is 10µs 1 1ms 10ms Tj=150°C Tc=25°C Single pulse 0.1 0.1 6/18 1 10 100 VDS(V) DocID025280 Rev 2 STF15N95K5, STP15N95K5, STW15N95K5 Electrical characteristics Figure 8. Output characteristics Figure 9. Transfer characteristics AM18030v1 ID (A) VGS=10, 11V 25 AM18031v1 ID (A) VDS=20V 25 9V 20 20 15 15 8V 10 10 7V 5 5 6V 0 5 0 10 20 15 0 5 VDS(V) Figure 10. Gate charge vs gate-source voltage AM18032v1 RDS(on) (Ω) 0.8 700 0.7 600 0.6 8 500 0.5 6 400 0.4 300 0.3 200 0.2 100 0.1 VDD=760 V ID=12 A 12 VDS 9 8 10 VGS(V) Figure 11. Static drain-source on-resistance VDS (V) 800 VGS (V) 7 6 AM18033v1 VGS=10V 10 4 2 0 0 5 10 15 20 25 30 Figure 12. Capacitance variations 1000 2 4 6 8 10 ID(A) Figure 13. Output capacitance stored energy AM18034v1 C (pF) 0 0 Qg(nC) Ciss AM18035v1 Eoss (µJ) 14 12 10 100 Coss 10 Crss 8 6 4 1 2 0.1 0.1 1 10 100 VDS(V) DocID025280 Rev 2 0 0 200 400 600 800 VDS(V) 7/18 Electrical characteristics STF15N95K5, STP15N95K5, STW15N95K5 Figure 14. Normalized gate threshold voltage vs temperature AM18036v1 VGS(th) (norm) Figure 15. Normalized on-resistance vs temperature AM18037v1 RDS(on) (norm) ID=100µA 1.2 ID=6A VGS=10V 2.5 1 2 0.8 1.5 0.6 1 0.4 0.5 0.2 0 -100 -50 50 0 100 150 0 -100 TJ(°C) Figure 16. Normalized VDS vs temperature 0 TJ(°C) 100 Figure 17. Source-drain diode forward characteristics AM18038v1 VDS AM18039v1 VSD(V) (norm) ID=1mA 1.1 1 1.05 0.9 1 0.8 0.95 0.7 0.9 0.6 TJ=-50°C TJ=25°C TJ=150°C 0.85 -100 0.5 -50 0 50 100 TJ(°C) Figure 18. Maximum avalanche energy vs starting TJ $0Y ($6 P- 9'' Ć9         8/18        7-ƒ& DocID025280 Rev 2 2 4 6 8 10 ISD(A) STF15N95K5, STP15N95K5, STW15N95K5 3 Test circuits Test circuits Figure 19. Switching times test circuit for resistive load Figure 20. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF IG=CONST VDD VGS 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 Figure 21. Test circuit for inductive load switching and diode recovery times A A AM01469v1 Figure 22. Unclamped inductive load test circuit L A D G D.U.T. FAST DIODE B B VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 23. Unclamped inductive waveform Figure 24. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 0 DocID025280 Rev 2 10% AM01473v1 9/18 Package mechanical data 4 STF15N95K5, STP15N95K5, STW15N95K5 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 10/18 DocID025280 Rev 2 STF15N95K5, STP15N95K5, STW15N95K5 Package mechanical data Figure 25. TO-220FP drawing 7012510_Rev_K_B DocID025280 Rev 2 11/18 Package mechanical data STF15N95K5, STP15N95K5, STW15N95K5 Table 9. TO-220FP mechanical data mm Dim. Min. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 12/18 Typ. 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 DocID025280 Rev 2 STF15N95K5, STP15N95K5, STW15N95K5 Package mechanical data Figure 26. TO-220 type A drawing BW\SH$B5HYB7 DocID025280 Rev 2 13/18 Package mechanical data STF15N95K5, STP15N95K5, STW15N95K5 Table 10. TO-220 type A mechanical data mm Dim. Min. Typ. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 14/18 Max. 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 ∅P 3.75 3.85 Q 2.65 2.95 DocID025280 Rev 2 STF15N95K5, STP15N95K5, STW15N95K5 Package mechanical data Figure 27. TO-247 drawing 0075325_G Table 11. TO-247 mechanical data mm. Dim. Min. Typ. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 DocID025280 Rev 2 15/18 Package mechanical data STF15N95K5, STP15N95K5, STW15N95K5 Table 11. TO-247 mechanical data (continued) mm. Dim. Min. Typ. Max. e 5.30 5.45 5.60 L 14.20 14.80 L1 3.70 4.30 L2 16/18 18.50 ∅P 3.55 3.65 ∅R 4.50 5.50 S 5.30 5.50 DocID025280 Rev 2 5.70 STF15N95K5, STP15N95K5, STW15N95K5 5 Revision history Revision history Table 12. Document revision history Date Revision 20-Sep-2013 1 First release. 2 – – – – – – – 07-Feb-2014 Changes Modified: IAR and EAS values in Table 2 Added: note 4 in Table 2 Modified: Rthj-case values in Table 3 Modified: typical values in Table 5, 6 and 7 Added: Section 2.1: Electrical characteristics (curves) Updated: Figure 19, 20, 21 and 22 Minor text changes DocID025280 Rev 2 17/18 STF15N95K5, STP15N95K5, STW15N95K5 Please Read Carefully: Information in this document is provided solely in connection with ST products. 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