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STP15NM60ND

STP15NM60ND

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

    SOT78,TO220AB,SC46

  • 描述:

    MOSFET N-CH 600V 14A TO-220

  • 数据手册
  • 价格&库存
STP15NM60ND 数据手册
STB15NM60ND - STF/I15NM60ND STP15NM60ND - STW15NM60ND N-channel 600 V - 0.27 Ω - 14 A - FDmesh™ II Power MOSFET D2PAK, I2PAK, TO-220, TO-220FP, TO-247 Features Type STB15NM60ND STF15NM60ND STI15NM60ND STP15NM60ND STW15NM60ND VDSS (@Tjmax) RDS(on) max ID 14 A 14 A 14 A(1) 14 A 14 A 3 1 3 12 650 V 0.299 Ω D2PAK 2 1 3 I²PAK TO-247 3 1 2 1 2 3 1. Limited only by maximum temperature allowed ■ ■ ■ ■ ■ The worldwide best RDS(on)* area amongst the fast recovery diode devices 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Extremely high dv/dt and avalanche capabilities TO-220 TO-220FP Figure 1. Internal schematic diagram Application ■ Switching applications Description The FDmesh™ II series belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company's strip layout and associates all advantages of reduced onresistance and fast switching with an intrinsic fastrecovery body diode.Strongly recommended for bridge topologies, in ZVS phase-shift converters. Table 1. Device summary Marking 15NM60ND 15NM60ND 15NM60ND 15NM60ND 15NM60ND Rev 2 Package D2PAK TO-220FP I2PAK TO-220 TO-247 Packaging Tape and reel Tube Tube Tube Tube 1/19 www.st.com 19 Order codes STB15NM60ND STF15NM60ND STI15NM60ND STP15NM60ND STW15NM60ND April 2008 Contents STP15NM60ND - STF/I15NM60ND - STB15NM60ND - STW15NM60ND Contents 1 2 3 4 5 6 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Test circuit ................................................ 7 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 2/19 STP15NM60ND - STF/I15NM60ND - STB15NM60ND - STW15NM60ND Electrical ratings 1 Electrical ratings Table 2. Symbol Absolute maximum ratings Value Parameter DPAK/I²PAK TO-220FP TO-220/IPAK 600 ± 25 14 9 56 125 40 -2500 -55 to 150 150 14 (1) 9(1) 56(1) 30 Unit VDS VGS ID ID IDM (2) PTOT dv/dt (3) VISO Tstg Tj Drain-source voltage (VGS=0) Gate-source voltage Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC = 100 °C Drain current (pulsed) Total dissipation at TC = 25 °C Peak diode recovery voltage slope Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s;TC=25 °C) Storage temperature Operating junction temperature V V A A A W V/ns V °C °C 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD ≤ 14 A, di/dt ≤ 400 A/µs, VDD = 80% V(BR)DSS Table 3. Symbol Rthj-case Rthj-amb Rthj-pcb Thermal data Parameter Thermal resistance junction-case max Thermal resistance junction-amb max Thermal resistance junction-pcb max Maximum lead temperature for soldering purposes -62.5 -TO-220 I²PAK 1 50 --30 TO-247 D²PAK TO-220FP 4.2 62.5 -Unit °C/W °C/W °C/W Tl 300 °C 3/19 Electrical ratings STP15NM60ND - STF/I15NM60ND - STB15NM60ND - STW15NM60ND Table 4. Symbol IAS EAS Avalanche characteristics Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) Single pulse avalanche energy (starting Tj = 25 °C, ID = IAS, VDD = 50 V) Max value 6 300 Unit A mJ 4/19 STP15NM60ND - STF/I15NM60ND - STB15NM60ND - STW15NM60ND Electrical characteristics 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 5. Symbol V(BR)DSS dv/dt(1) On/off states Parameter Drain-source breakdown voltage Drain-source voltage slope Zero gate voltage drain current (VGS = 0) Gate body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 1 mA, VGS= 0 VDD = 480 V,ID = 14 A, VGS = 10 V VDS = Max rating, VDS = Max rating,@125 °C VGS = ±20 V VDS= VGS, ID = 250 µA VGS= 10 V, ID= 7 A 3 4 0.27 Min. 600 30 1 100 100 5 0.299 Typ. Max. Unit V V/ns µA µA nA V Ω IDSS IGSS VGS(th) RDS(on) 1. Value measured at turn off under inductive load Table 6. Symbol gfs(1) Ciss Coss Crss Coss eq.(2) Dynamic Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Equivalent output capacitance Gate input resistance Test conditions VDS =15 V, ID= 7 A VDS = 50 V, f =1 MHz, VGS = 0 Min. Typ. 10 1250 65 5 180 Max. Unit S pF pF pF pF VGS = 0, VDS = 0V to 480 V f=1 MHz Gate DC Bias=0 Test signal level=20 mV open drain VDD = 480 V, ID = 14 A VGS = 10 V (see Figure 19) Rg 4 Ω nC nC nC Qg Qgs Qgd 1. Total gate charge Gate-source charge Gate-drain charge 40 8 22 Pulsed: pulse duration = 300 µs, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 5/19 Electrical characteristics STP15NM60ND - STF/I15NM60ND - STB15NM60ND - STW15NM60ND Table 7. Symbol td(on) tr td(off) tf Switching times Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD = 300 V, ID = 7 A, RG = 4.7 Ω, VGS = 10 V (see Figure 18) Min Typ 17 20 47 28 Max Unit ns ns ns ns Table 8. Symbol ISD ISDM (1) VSD(2) trr Qrr IRRM trr Qrr IRRM 2. Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 14 A, VGS=0 ISD =14 A, di/dt =100 A/µs, VDD = 100 V (see Figure 20) VDD = 100 V di/dt =100 A/µs, ISD = 14 A Tj = 150 °C (see Figure 20) 148 910 12 190 1280 13 Test conditions Min Typ Max 14 56 1.3 Unit A A V ns nC A ns nC A 1. Pulse width limited by safe operating area Pulsed: pulse duration = 300 µs, duty cycle 1.5% 6/19 STP15NM60ND - STF/I15NM60ND - STB15NM60ND - STW15NM60ND Electrical characteristics 2.1 Figure 2. Electrical characteristics (curves) Safe operating area for TO-220 / D²PAK / I²PAK Figure 3. Thermal impedance for TO-220 / D²PAK / I²PAK Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP Figure 6. Safe operating area for TO-247 Figure 7. Thermal impedance for TO-247 7/19 Electrical characteristics Figure 8. STP15NM60ND - STF/I15NM60ND - STB15NM60ND - STW15NM60ND Figure 9. Transfer characteristics Output characteristics Figure 10. Transconductance Figure 11. Static drain-source on resistance Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations C(pF) HV42710 1000 f= 1 MHz VGS = 0 100 10 1 0.1 1 10 100 VDS(V) 8/19 STP15NM60ND - STF/I15NM60ND - STB15NM60ND - STW15NM60ND Figure 14. Normalized gate threshold voltage vs temperature Electrical characteristics Figure 15. Normalized on resistance vs temperature Figure 16. Source-drain diode forward characteristics Figure 17. Normalized BVDSS vs temperature 9/19 Test circuit STP15NM60ND - STF/I15NM60ND - STB15NM60ND - STW15NM60ND 3 Test circuit Figure 19. Gate charge test circuit Figure 18. Switching times test circuit for resistive load Figure 20. Test circuit for inductive load Figure 21. Unclamped Inductive load test switching and diode recovery times circuit Figure 22. Unclamped inductive waveform Figure 23. Switching time waveform 10/19 STP15NM60ND - STF/I15NM60ND - STB15NM60ND - STW15NM60ND Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 11/19 Package mechanical data STP15NM60ND - STF/I15NM60ND - STB15NM60ND - STW15NM60ND TO-220 mechanical data mm Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 ∅P Q 4.40 0.61 1.14 0.48 15.25 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 Typ Max 4.60 0.88 1.70 0.70 15.75 Min 0.173 0.024 0.044 0.019 0.6 inch Typ Max 0.181 0.034 0.066 0.027 0.62 0.050 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 0.151 0.116 12/19 STP15NM60ND - STF/I15NM60ND - STB15NM60ND - STW15NM60ND Package mechanical data TO-220FP MECHANICAL DATA mm. MIN. 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 28.6 9.8 2.9 15.9 9 3 30.6 10.6 3.6 16.4 9.3 3.2 1.126 .0385 0.114 0.626 0.354 0.118 TYP MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.141 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 DIM. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 Ø A B L3 L6 L7 F1 F D G1 H F2 L2 L5 E 123 L4 G 13/19 Package mechanical data STP15NM60ND - STF/I15NM60ND - STB15NM60ND - STW15NM60ND TO-262 (I2PAK) MECHANICAL DATA mm. DIM. MIN. A A1 b b1 c c2 D e e1 E L L1 L2 4.40 2.40 0.61 1.14 0.49 1.23 8.95 2.40 4.95 10 13 3.50 1.27 TYP MAX. 4.60 2.72 0.88 1.70 0.70 1.32 9.35 2.70 5.15 10.40 14 3.93 1.40 MIN. 0.173 0.094 0.024 0.044 0.019 0.048 0.352 0.094 0.194 0.393 0.511 0.137 0.050 TYP. MAX. 0.181 0.107 0.034 0.066 0.027 0.052 0.368 0.106 0.202 0.410 0.551 0.154 0.055 inch 14/19 STP15NM60ND - STF/I15NM60ND - STB15NM60ND - STW15NM60ND Package mechanical data TO-247 Mechanical data mm. Min. 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 3.65 5.50 14.80 4.30 Typ Max. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 Dim. A A1 b b1 b2 c D E e L L1 L2 øP øR S 15/19 Package mechanical data STP15NM60ND - STF/I15NM60ND - STB15NM60ND - STW15NM60ND D²PAK (TO-263) mechanical data mm Dim Min A A1 b b2 c c2 D D1 E E1 e e1 H J1 L L1 L2 R V2 4.40 0.03 0.70 1.14 0.45 1.23 8.95 7.50 10 8.50 2.54 4.88 15 2.49 2.29 1.27 1.30 0.4 0° 8° 0° 5.28 15.85 2.69 2.79 1.40 1.75 0.192 0.590 0.099 0.090 0.05 0.051 Typ Max 4.60 0.23 0.93 1.70 0.60 1.36 9.35 10.40 Min 0.173 0.001 0.027 0.045 0.017 0.048 0.352 0.295 0.394 0.334 inch Typ Max 0.181 0.009 0.037 0.067 0.024 0.053 0.368 0.409 0.1 0.208 0.624 0.106 0.110 0.055 0.069 0.016 8° 0079457_M 16/19 STP15NM60ND - STF/I15NM60ND - STB15NM60ND - STW15NM60ND Packaging mechanical data 5 Packaging mechanical data D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 24.4 100 30.4 26.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0795 0.960 1.039 3.937 1.197 BULK QTY 1000 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T W mm MIN. 10.5 15.7 1.5 1.59 1.65 11.4 4.8 3.9 11.9 1.9 50 0.25 23.7 24.3 MAX. 10.7 15.9 1.6 1.61 1.85 11.6 5.0 4.1 12.1 2.1 inch MIN. MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574 0.35 0.0098 0.0137 0.933 0.956 BASE QTY 1000 * on sales type 17/19 Revision history STP15NM60ND - STF/I15NM60ND - STB15NM60ND - STW15NM60ND 6 Revision history Table 9. Date 06-Mar-2008 24-Apr-2008 Document revision history Revision 1 2 First release VGS value on Table 2 changed. Changes 18/19 STP15NM60ND - STF/I15NM60ND - STB15NM60ND - STW15NM60ND Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. 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