STP17N62K3

STF17N62K3 STP17N62K3, STW17N62K3 N-channel 620 V, 0.28 Ω, 15.5 A, TO-220FP, TO-220, TO-247 SuperMESH3™ Power MOSFET Features Order codes VDSS RDS(on) max. ID Pw STF17N62K3 620 V < 0.34 Ω 15.5 A 40 W STP17N62K3 620 V < 0.34 Ω 15.5 A 190 W STW17N62K3 620 V < 0.34 Ω 15.5 A 190 W ■ 100% avalanche tested ■ Extremely high dv/dt capability ■ Gate charge minimized ■ Very low intrinsic capacitance ■ Improved diode reverse recovery characteristics ■ Zener-protected 1 TO-247 3 3 1 2 TO-220 3 TO-220FP Figure 1. 1 2 Internal schematic diagram D(2) Applications ■ 2 Switching applications Description G(1) This SuperMESH3™ Power MOSFET is the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. This device boasts an extremely low onresistance, superior dynamic performance and high avalanche capability, rendering it suitable for the most demanding applications. Table 1. S(3) AM01476v1 Device summary Order codes Marking Package Packaging STF17N62K3 17N62K3 TO-220FP Tube STP17N62K3 17N62K3 TO-220 Tube STW17N62K3 17N62K3 TO-247 Tube July 2011 Doc ID 15046 Rev 2 1/17 www.st.com 17 Contents STF17N62K3, STP17N62K3, STW17N62K3 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 2/17 .............................................. 9 Doc ID 15046 Rev 2 STF17N62K3, STP17N62K3, STW17N62K3 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter Unit TO-220 TO-220FP TO-247 VDS Drain-source voltage (VGS = 0) 620 VGS Gate- source voltage ± 30 ID ID Drain current (continuous) at TC = 25 °C V V 15.5 15.5 (1) A (1) A Drain current (continuous) at TC = 100 °C 10 10 IDM (2) Drain current (pulsed) 62 62 (1) A PTOT Total dissipation at TC = 25 °C 190 40 W IAR (3) Avalanche current, repetitive or notrepetitive 15.5 A EAS (4) Single pulse avalanche energy 260 mJ Derating factor dv/dt (5) 1.52 Peak diode recovery voltage slope VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; TC = 25 °C) Tstg Storage temperature Tj 0.32 9 W/°C V/ns 2500 V -55 to 150 °C 150 °C Max. operating junction temperature 1. Limited only by temperature allowed. 2. Pulse width limited by safe operating area. 3. Pulse width limited by Tj max. 4. Starting Tj = 25°C, ID = IAR, VDD = 50V. 5. ISD ≤ 15.5 A, di/dt ≤ 400 A/µs, VDD = 80% V(BR)DSS, VDS peak < V(BR)DSS. Table 3. Symbol Thermal data Parameter Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-ambient max Tl Maximum lead temperature for soldering purpose Doc ID 15046 Rev 2 TO-220FP TO-220 3.13 TO-247 0.66 62.5 °C/W 50 300 Unit °C/W °C 3/17 Electrical characteristics 2 STF17N62K3, STP17N62K3, STW17N62K3 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 4. Symbol V(BR)DSS On /off states Parameter Test conditions Drain-source breakdown voltage (VGS = 0) ID = 1 mA IDSS VDS = 620 V Zero gate voltage drain current (VGS = 0) VDS = 620 V, TC=125 °C IGSS Gate-body leakage current (VDS = 0) Gate threshold voltage VDS = VGS, ID = 100 µA RDS(on Static drain-source on resistance Symbol Ciss Coss Crss Typ. Max. Unit 620 V 1 50 µA µA ± 10 µA 3.75 4.5 V 0.28 0.34 Ω Min. Typ. Max. Unit - 3100 200 35 - pF pF pF - 140 - pF - 200 - pF VGS = ± 20 V VGS(th) Table 5. Min. 3 VGS = 10 V, ID = 7.5 A Dynamic Parameter Input capacitance Output capacitance Reverse transfer capacitance Co(tr)(1) Equivalent capacitance time related Co(er)(2) Equivalent capacitance energy related Test conditions VDS = 50 V, f = 1 MHz, VGS = 0 VDS = 0 to 496 V, VGS = 0 RG Intrinsic gate resistance f = 1 MHz open drain - 2.3 - Ω Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 496 V, ID = 15.5 A, VGS = 10 V (see Figure 20) - 105 16 62 - nC nC nC 1. Coss eq. time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 2. Coss eq. energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS increases from 0 to 80% VDSS 4/17 Doc ID 15046 Rev 2 STF17N62K3, STP17N62K3, STW17N62K3 Table 6. Symbol td(on) tr td(off) tf Table 7. Electrical characteristics Switching times Parameter Test conditions Turn-on delay time Rise time Turn-off-delay time Fall time ISD ISDM (1) Source-drain current Source-drain current (pulsed) VSD (2) Forward on voltage trr Qrr IRRM - 22 29 110 62 Max Unit - ns ns ns ns Source drain diode Parameter IRRM Typ. VDD = 310 V, ID = 7.5 A, RG = 4.7 Ω, VGS = 10 V (see Figure 19) Symbol trr Qrr Min. Test conditions Min. Typ. Max. Unit - 15.5 62 A A ISD = 15.5 A, VGS = 0 - 1.6 V Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 15.5 A, di/dt = 100 A/µs VDD = 60 V (see Figure 24) - 380 5000 26 ns nC A Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 15.5 A, di/dt = 100 A/µs VDD = 60 V, Tj = 150 °C (see Figure 24) - 450 6500 29 ns nC A Min Typ 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Table 8. Symbol BVGSO Gate-source Zener diode Parameter Test conditions Gate-source breakdown voltage Igs=± 1 mA (open drain) 30 Max Unit V The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. Doc ID 15046 Rev 2 5/17 Electrical characteristics STF17N62K3, STP17N62K3, STW17N62K3 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220FP Figure 3. Thermal impedance for TO-220FP Figure 5. Thermal impedance for TO-220 Figure 7. Thermal impedance for TO-247 AM10342v1 S( o n) 10µs D 10 O Li per m at ite io d ni by n m this ax a R rea is ID (A) 1 100µs 1ms 10ms 0.1 0.01 0.1 Figure 4. Tj=150°C Tc=25°C Single pulse 10 1 100 Safe operating area for TO-220 AM10341v1 ID (A) 10µs 100µs 1ms DS (o n) a is Tj=150°C Tc=25°C Single pulse Op Lim era ite tion d by in th ma is a x R re 10 1 0.1 0.1 Figure 6. VDS(V) 10ms 10 1 100 VDS(V) Safe operating area for TO-247 AM10343v1 ID (A) Tj=150°C Tc=25°C Single pulse 100 ) on S( 100µs D 10 O Li per m at ite io d ni by n m this ax a R rea is 10µs 1ms 10ms 1 0.1 0.1 6/17 1 10 100 VDS(V) Doc ID 15046 Rev 2 STF17N62K3, STP17N62K3, STW17N62K3 Figure 8. Electrical characteristics Output characteristics Figure 9. Transfer characteristics AM10344v1 ID (A) AM10345v1 ID (A) VGS=15V 45 35 VGS=10V 40 7V 30 35 30 25 25 20 20 15 6V 15 10 10 5 5 5V 0 0 5 10 20 15 0 0 25 VDS(V) 2 4 8 6 VGS(V) Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on resistance AM10346v1 VGS (V) VDS 12 VDD=496V ID=15.5A 500 10 AM10347v1 RDS(on) (Ω) VGS=10V 0.290 400 0.280 8 300 6 0.270 200 4 100 2 0 0 20 40 80 60 100 0 120 Qg(nC) Figure 12. Capacitance variations 0.260 0.250 0 2 4 6 8 10 12 Figure 13. Output capacitance stored energy AM10348v1 C (pF) ID(A) AM10349v1 Eoss (µJ) Ciss 16 14 1000 12 10 100 Coss Crss 10 8 6 4 2 1 0.1 1 10 100 VDS(V) Doc ID 15046 Rev 2 0 0 100 200 300 400 500 VDS(V) 7/17 Electrical characteristics STF17N62K3, STP17N62K3, STW17N62K3 Figure 14. Normalized gate threshold voltage vs temperature AM10350v1 VGS(th) (norm) Figure 15. Normalized on resistance vs temperature AM10351v1 RDS(on) (norm) ID=100µA 1.1 VGS=10V ID=7.5A 2.5 1.0 2.0 0.9 1.5 0.8 1.0 0.7 0.5 0.6 0.5 -75 25 -25 75 125 Figure 16. Source-drain diode forward characteristics -25 25 75 125 TJ(°C) Figure 17. Normalized BVDSS vs temperature AM10353v1 VSD (V) 1.1 0 -75 TJ(°C) AM10352v1 BVDSS (norm) ID=1mA 1.10 1.0 1.05 TJ=-50°C 0.9 1.00 0.8 0.95 TJ=25°C 0.7 0.90 TJ=150°C 0.6 0.85 0.5 0.4 0 2 4 6 8 10 12 ISD(A) 0.80 -75 Figure 18. Maximum avalanche energy vs starting Tj AM10354v1 EAS (mJ) 280 ID=15.5 A VDD=50 V 240 200 160 120 80 40 0 0 8/17 20 40 60 80 100 120 140 TJ(°C) Doc ID 15046 Rev 2 -25 25 75 125 TJ(°C) STF17N62K3, STP17N62K3, STW17N62K3 3 Test circuits Test circuits Figure 19. Switching times test circuit for resistive load Figure 20. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 21. Test circuit for inductive load Figure 22. Unclamped Inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 23. Unclamped inductive waveform AM01471v1 Figure 24. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 0 Doc ID 15046 Rev 2 10% AM01473v1 9/17 Package mechanical data 4 STF17N62K3, STP17N62K3, STW17N62K3 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 10/17 Doc ID 15046 Rev 2 STF17N62K3, STP17N62K3, STW17N62K3 Table 9. Package mechanical data TO-220FP mechanical data mm Dim. Min. Typ. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 Figure 25. TO-220FP drawing L7 E A B D Dia L5 L6 F1 F2 F G H G1 L4 L2 L3 7012510_Rev_K Doc ID 15046 Rev 2 11/17 Package mechanical data Table 10. STF17N62K3, STP17N62K3, STW17N62K3 TO-220 type A mechanical data mm Dim. Min. Typ. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 12/17 Max. 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 ∅P 3.75 3.85 Q 2.65 2.95 Doc ID 15046 Rev 2 STF17N62K3, STP17N62K3, STW17N62K3 Package mechanical data Figure 26. TO-220 type A drawing 0015988_typeA_Rev_S Doc ID 15046 Rev 2 13/17 Package mechanical data Table 11. STF17N62K3, STP17N62K3, STW17N62K3 TO-247 mechanical data mm Dim. Min. Typ. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.45 L 14.20 14.80 L1 3.70 4.30 L2 18.50 ∅P 3.55 3.65 ∅R 4.50 5.50 S 14/17 Max. 5.50 Doc ID 15046 Rev 2 STF17N62K3, STP17N62K3, STW17N62K3 Package mechanical data Figure 27. TO-247 drawing 0075325_F Doc ID 15046 Rev 2 15/17 Revision history 5 STF17N62K3, STP17N62K3, STW17N62K3 Revision history Table 12. 16/17 Document revision history Date Revision Changes 11-Nov-2008 1 First release. 27-Jul-2011 2 Section 2.1: Electrical characteristics (curves) has been updated. Minor text changes. Doc ID 15046 Rev 2 STF17N62K3, STP17N62K3, STW17N62K3 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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