STP180N4F6

STP180N4F6 N-channel 40 V, 2.1 mΩ typ., 120 A STripFET™ F6 Power MOSFET in a TO-220 package Datasheet - production data Features Order code VDS RDS(on) max. ID PTOT STP180N4F6 40 V 2.7 mΩ 120 A 190 W     Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Applications Figure 1: Internal schematic diagram   Switching applications Power tools Description This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Table 1: Device summary Order code Marking Package Packing STP180N4F6 180N4F6 TO-220 Tube October 2016 DocID028221 Rev 2 This is information on a product in full production. 1/13 www.st.com Contents STP180N4F6 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 5 2/13 TO-220 type A package information................................................ 10 Revision history ............................................................................ 12 DocID028221 Rev 2 STP180N4F6 1 Electrical ratings Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 40 V VGS Gate-source voltage ±20 V Drain current (continuous) at Tcase = 25 °C 120 Drain current (continuous) at Tcase = 100 °C 120 Drain current (pulsed) 480 A PTOT Total dissipation at Tcase = 25 °C 190 W Tstg Storage temperature range -55 to 175 °C ID(1) IDM(1)(2) Tj Operating junction temperature range A Notes: (1) Limited by package. (2)Pulse width limited by safe operating area. Table 3: Thermal data Symbol Parameter Rthj-case Thermal resistance junction-case 0.78 Rthj-amb Thermal resistance junction-amb 62.5 DocID028221 Rev 2 Value Unit °C/W 3/13 Electrical characteristics 2 STP180N4F6 Electrical characteristics (Tcase = 25 °C unless otherwise specified) Table 4: Static Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage VGS = 0 V, ID = 250 µA Min. Typ. Max. 40 Unit V VGS = 0 V, VDS = 40 V 1 VGS = 0 V, VDS = 40 V, Tcase = 125 °C(1) 100 Gate-body leakage current VDS = 0 V, VGS = ±20 V ±100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 4.5 V RDS(on) Static drain-source onresistance VGS = 10 V, ID = 60 A 2.1 2.7 mΩ Min. Typ. Max. Unit - 7735 - - 745 - - 560 - - 130 - - 36 - - 42 - Test conditions Min. Typ. Max. VDD = 20 V, ID = 60 A RG = 4.7 Ω, VGS = 10 V (see Figure 13: "Test circuit for resistive load switching times" and Figure 18: "Switching time waveform") - 24 - - 150 - - 106 - - 57 - IDSS Zero gate voltage drain current IGSS 3 µA Notes: (1)Defined by design, not subject to production test. Table 5: Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Test conditions VDS = 25 V, f = 1 MHz, VGS = 0 V VDD = 20 V, ID = 120 A, VGS = 10 V (see Figure 14: "Test circuit for gate charge behavior") pF nC Table 6: Switching times Symbol td(on) tr td(off) tf 4/13 Parameter Turn-on delay time Rise time Turn-off delay time Fall time DocID028221 Rev 2 Unit ns STP180N4F6 Electrical characteristics Table 7: Source-drain diode Symbol Parameter ISD(1) Source-drain current ISDM(2) Source-drain current (pulsed) VSD(2) Forward on voltage Test conditions VGS = 0 V, ISD = 120 A trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current ISD = 120 A, di/dt = 100 A/µs, VDD = 32 V (see Figure 15: "Test circuit for inductive load switching and diode recovery times") Min. Typ. Max. Unit - 120 A - 480 A - 1.3 V - 36 ns - 40 nC - 2.3 A Notes: (1) Limited by package. (2) Pulse test: pulse duration = 300 µs, duty cycle 1.5%. DocID028221 Rev 2 5/13 Electrical characteristics 2.1 6/13 STP180N4F6 Electrical characteristics (curves) Figure 2: Safe operating area Figure 3: Thermal impedance Figure 4: Output characteristics Figure 5: Transfer characteristics Figure 6: Gate charge vs gate-source voltage Figure 7: Static drain-source on-resistance DocID028221 Rev 2 STP180N4F6 Electrical characteristics Figure 8: Capacitance variations Figure 9: Normalized gate threshold voltage vs temperature Figure 10: Normalized on-resistance vs temperature Figure 11: Normalized V(BR)DSS vs temperature Figure 12: Source-drain diode forward characteristics DocID028221 Rev 2 7/13 Test circuits 3 STP180N4F6 Test circuits Figure 13: Test circuit for resistive load switching times Figure 14: Test circuit for gate charge behavior Figure 15: Test circuit for inductive load switching and diode recovery times Figure 16: Unclamped inductive load test circuit Figure 17: Unclamped inductive waveform 8/13 DocID028221 Rev 2 Figure 18: Switching time waveform STP180N4F6 4 Package information Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. DocID028221 Rev 2 9/13 Package information 4.1 STP180N4F6 TO-220 type A package information Figure 19: TO-220 type A package outline 10/13 DocID028221 Rev 2 STP180N4F6 Package information Table 8: TO-220 type A mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.55 c 0.48 0.70 D 15.25 15.75 D1 1.27 E 10.00 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13.00 14.00 L1 3.50 3.93 L20 16.40 L30 28.90 øP 3.75 3.85 Q 2.65 2.95 DocID028221 Rev 2 11/13 Revision history 5 STP180N4F6 Revision history Table 9: Document revision history Date Revision 07-Aug-2015 1 First release. 2 Datasheet promoted from preliminary to production data. Changed Figure 5: "Transfer characteristics". Minor text changes. 11-Oct-2016 12/13 Changes DocID028221 Rev 2 STP180N4F6 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2016 STMicroelectronics – All rights reserved DocID028221 Rev 2 13/13