STP185N55

STB185N55 STP185N55 N-channel 55V - 2.9mΩ - 120A - D2PAK/TO-220 MDmesh™ low voltage Power MOSFET TARGET SPECIFICATION General features Type STB185N55 STP185N55 VDSS 55V 55V RDS(on) 3.5mΩ 3.8mΩ ID 120A(1) 120A(1) 3 1 2 1. Value limited by wire bonding ■ ■ 3 1 Ultra low on-resistance 100% avalanche tested TO-220 D2PAK Description This n-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronic unique “single feature size™“ strip-based process with less critical aligment steps and therefore a remarkable manufacturing reproducibility. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and low gate charge. Internal schematic diagram Applications ■ Switching application – Automotive Order codes Part number STB185N55 STP185N55 Marking B185N55 P185N55 Package D 2PAK Packaging Tape & reel Tube TO-220 August 2006 Rev 3 1/12 www.st.com 12 This is preliminary information on a new product foreseen to be developed. Details are subject to change without notice. Contents STB185N55 - STP185N55 Contents 1 2 3 4 5 6 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Test circuit ................................................ 6 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 STB185N55 - STP185N55 Electrical ratings 1 Electrical ratings Table 1. Symbol VDS VGS ID (1) ID (1) IDM (2) PTOT Absolute maximum ratings Parameter Drain-source voltage (VGS=0) Gate-source voltage Drain current (continuous) at TC = 25°C Drain current (continuous) at TC=100°C Drain current (pulsed) Total dissipation at TC = 25°C Derating factor Value 55 ± 20 120 120 480 315 2.1 Tbd Tbd -55 to 175 Unit V V A A A W W/°C V/ns mJ °C dv/dt EAS (3) Tj Tstg Peak diode recovery voltage slope Single pulse avalanche energy Operating junction temperature storage temperature 1. Current limited by package. 2. Pulse width limited by safe operating area. 3. Starting Tj=25°C, Id=60A, Vdd=40V Table 2. Thermal data TO-220 D²PAK 0.48 62.5 -300 -35 -Unit °C/W °C/W °C/W °C Rthj-case Rthj-a Rthj-pcb(1) Tl Thermal resistance junction-case Thermal resistance junction-ambient max Thermal resistance junction-ambient max Maximum lead temperature for soldering purpose 1. When mounted o inch² FR4 2oz Cu. 3/12 Electrical characteristics STB185N55 - STP185N55 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 3. Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) On/off states Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Test conditions ID = 250µA, VGS= 0 VDS = max rating, VDS = max rating,@125°C Min. 55 10 100 ±200 Typ. Max. Unit V µA µA nA V mΩ mΩ Gate body leakage current VGS = ±20V (VDS = 0) Gate threshold voltage Static drain-source on resistance VDS= VGS, ID = 250µA VGS= 10V, ID= 60A D²PAK TO-220 2 4 3.5 3.8 Table 4. Symbol gfs (1) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Dynamic Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge Test conditions VDS = 15V , ID = 60A Min. Typ. Tbd 6200 1800 100 Tbd Tbd Tbd Tbd 110 Tbd Tbd Tbd Max. Unit S pF pF pF ns ns ns ns nC nC nC VDS = 25V, f = 1MHz, VGS = 0 VDD = 27V, ID = 60A RG = 4.7Ω VGS = 10V (see Figure 1) VDD = 44V, ID = 120A, VGS = 10V, RG = 4.7Ω (see Figure 2) 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 4/12 STB185N55 - STP185N55 Electrical characteristics Table 5. Symbol ISD ISDM(1) VSD(2) trr Qrr IRRM Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD=120A, VGS=0 ISD=120A, VDD= 30V di/dt = 100A/µs, Tj=150°C (see Figure 6) Tbd Tbd Tbd Test conditions Min. Typ. Max. 120 480 1.5 Unit A A V ns nC A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300µs, duty cycle 1.5% 5/12 Test circuit STB185N55 - STP185N55 3 Figure 1. Test circuit Switching times test circuit for resistive load Figure 2. Gate charge test circuit Figure 3. Test circuit for inductive load Figure 4. switching and diode recovery times Unclamped Inductive load test circuit Figure 5. Unclamped inductive waveform Figure 6. Switching time waveform 6/12 STB185N55 - STP185N55 Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at : www.st.com 7/12 Package mechanical data STB185N55 - STP185N55 D2PAK MECHANICAL DATA TO-247 MECHANICAL DATA mm. DIM. MIN. A A1 A2 B B2 C C2 D D1 E E1 G L L2 L3 M R V2 0º 4.88 15 1.27 1.4 2.4 0.4 4º 10 8.5 5.28 15.85 1.4 1.75 3.2 0.192 0.590 0.050 0.055 0.094 0.015 4.4 2.49 0.03 0.7 1.14 0.45 1.23 8.95 8 10.4 0.393 0.334 0.208 0.625 0.055 0.068 0.126 TYP MAX. 4.6 2.69 0.23 0.93 1.7 0.6 1.36 9.35 MIN. 0.173 0.098 0.001 0.027 0.044 0.017 0.048 0.352 0.315 TYP. MAX. 0.181 0.106 0.009 0.036 0.067 0.023 0.053 0.368 inch 3 1 8/12 STB185N55 - STP185N55 Package mechanical data TO-220 MECHANICAL DATA DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154 øP Q 9/12 Packaging mechanical data STB185N55 - STP185N55 5 Packaging mechanical data D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 24.4 100 30.4 26.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0795 0.960 1.039 3.937 1.197 BULK QTY 1000 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T W mm MIN. 10.5 15.7 1.5 1.59 1.65 11.4 4.8 3.9 11.9 1.9 50 0.25 23.7 24.3 MAX. 10.7 15.9 1.6 1.61 1.85 11.6 5.0 4.1 12.1 2.1 inch MIN. MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574 0.35 0.0098 0.0137 0.933 0.956 BASE QTY 1000 * on sales type 10/12 STB185N55 - STP185N55 Revision history 6 Revision history Table 6. Date 14-Dec-2005 19-Jun-2006 01-Aug-2006 Revision history Revision 1 2 3 First version New template New value on Dynamic Changes 11/12 STB185N55 - STP185N55 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. 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