STP18N65M5

STF18N65M5, STI18N65M5, STP18N65M5, STW18N65M5 N-channel 650 V, 0.198 Ω typ., 15 A MDmesh™ V Power MOSFET in TO-220FP, I²PAK, TO-220 and TO-247 packages Datasheet — production data Features TAB Order code VDSS @ TJmax RDS(on) max ID 3 STF18N65M5 STI18N65M5 STP18N65M5 1 3 12 710 V < 0.22 Ω 2 TO-220FP I²PAK 15 A TAB STW18N65M5 ■ Worldwide best RDS(on) * area ■ Higher VDSS rating and high dv/dt capability ■ Excellent switching performance ■ 100% avalanche tested 3 1 2 2 TO-247 TO-220 Figure 1. 3 1 Internal schematic diagram Applications ■ Switching applications $4!" Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. Table 1. ' 3 !-V Device summary Order code Marking STF18N65M5 Package TO-220FP STI18N65M5 I²PAK 18N65M5 Tube STP18N65M5 TO-220 STW18N65M5 TO-247 July 2012 This is information on a product in full production. Packaging Doc ID 022879 Rev 3 1/19 www.st.com 19 Contents STF18N65M5, STI18N65M5, STP18N65M5, STW18N65M5 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 2/19 .............................................. 9 Doc ID 022879 Rev 3 STF18N65M5, STI18N65M5, STP18N65M5, STW18N65M5 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter Unit I²PAK TO-220 TO-247 TO-220FP VGS Gate-source voltage ± 25 V (1) A ID Drain current (continuous) at TC = 25 °C 15 15 ID Drain current (continuous) at TC = 100 °C 9.4 9.4 (1) A Drain current (pulsed) 60 (1) A Total dissipation at TC = 25 °C 110 IDM (1) PTOT dv/dt (2) Peak diode recovery voltage slope VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; TC = 25 °C) Tstg Storage temperature Tj 60 25 15 W V/ns 2500 V - 55 to 150 °C 150 °C Max. operating junction temperature 1. Limited by maximum junction temperature. 2. ISD ≤ 15 A, di/dt ≤400 A/µs; VDSPeak < V(BR)DSS, VDD = 400 V Table 3. Thermal data Value Symbol Parameter Unit I²PAK TO-220 TO-247 TO-220FP Rthj-case Thermal resistance junction-case max Rthj-amb Table 4. Symbol Thermal resistance junction-ambient max 1.14 62.5 50 5 °C/W 62.5 °C/W Avalanche characteristics Parameter IAR Avalanche current, repetetive or not repetetive (pulse width limited by Tjmax ) EAS Single pulse avalanche energy (starting TJ = 25 °C, ID= IAR; VDD = 50 V) Doc ID 022879 Rev 3 Value Unit 4 A 210 mJ 3/19 Electrical characteristics 2 STF18N65M5, STI18N65M5, STP18N65M5, STW18N65M5 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 5. Symbol V(BR)DSS On /off states Parameter Test conditions Drain-source breakdown voltage ID = 1 mA, VGS = 0 IDSS Zero gate voltage VDS = 650 V drain current (VGS = 0) VDS = 650 V, TC=125 °C IGSS Gate-body leakage current (VDS = 0) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source on-resistance Symbol Ciss Coss Crss Co(tr)(1) Co(er) (2) Typ. Max. Unit 650 V 1 100 µA µA ± 100 nA 4 5 V 0.198 0.22 Ω Min. Typ. Max. Unit - 1240 32 3.2 - pF pF pF - 99 - pF - 30 - pF - 3 - Ω - 31 8 14 - nC nC nC VGS = ± 25 V VGS(th) Table 6. Min. 3 VGS = 10 V, ID = 7.5 A Dynamic Parameter Test conditions Input capacitance Output capacitance Reverse transfer capacitance VDS = 100 V, f = 1 MHz, VGS = 0 Equivalent capacitance time related VDS = 0 to 520 V, VGS = 0 Equivalent capacitance energy related RG Intrinsic gate resistance f = 1 MHz open drain Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 520 V, ID = 7.5 A, VGS = 10 V (see Figure 20) 1. Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS increases from 0 to 80% VDSS 4/19 Doc ID 022879 Rev 3 STF18N65M5, STI18N65M5, STP18N65M5, STW18N65M5 Table 7. Symbol td(V) tr(V) tf(i) tc(off) Table 8. Switching times Parameter Test conditions Voltage delay time Voltage rise time Current fall time Crossing time VDD = 400 V, ID = 9.5 A, RG = 4.7 Ω, VGS = 10 V (see Figure 21 and Figure 24) Parameter ISD ISDM (1) Source-drain current Source-drain current (pulsed) VSD (2) Forward on voltage IRRM trr Qrr IRRM Min. Typ. - 36 7 9 11 Min. Typ. Max Unit - ns ns ns ns Source drain diode Symbol trr Qrr Electrical characteristics Test conditions Max. Unit - 15 60 A A ISD = 15 A, VGS = 0 - 1.5 V Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 15 A, di/dt = 100 A/µs VDD = 100 V (see Figure 24) - 290 3.4 23.5 ns µC A Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 15 A, di/dt = 100 A/µs VDD = 100 V, Tj = 150 °C (see Figure 24) - 352 4 24 ns µC A 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Doc ID 022879 Rev 3 5/19 Electrical characteristics STF18N65M5, STI18N65M5, STP18N65M5, STW18N65M5 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for I²PAK and TO-220 Figure 3. Thermal impedance for I²PAK and TO-220 Figure 5. Thermal impedance for TO-220FP Figure 7. Thermal impedance TO-247 AM12487v1 S( on ) Op Lim era ite tion d by in th m is ax ar RD ea is ID (A) 10 10µs 100µs 1ms 1 Tj=150°C Tc=25°C 10ms Single pulse 0.1 0.1 Figure 4. 10 1 100 VDS(V) Safe operating area TO220FP AM12488v1 ) on S( D 10 O p Li era m ti ite on d by in t m his ax a R rea is ID (A) 1 10µs 100µs 1ms Tj=150°C Tc=25°C 0.1 10ms Single pulse 0.01 0.1 Figure 6. 10 1 100 VDS(V) Safe operating area TO-247 AM12489v1 n) (o DS 10 Op Lim era ite tion d by in th m is a ax r R ea is ID (A) 1 10µs 100µs Tj=150°C Tc=25°C Single pulse 0.1 0.1 6/19 1 10 100 1ms 10ms VDS(V) Doc ID 022879 Rev 3 STF18N65M5, STI18N65M5, STP18N65M5, STW18N65M5 Figure 8. Output characteristics Figure 9. AM12472v1 ID (A) Electrical characteristics VGS= 9, 10 V Transfer characteristics AM12486v1 ID (A) 35 35 VDS= 25 V 30 30 VGS= 8 V 25 25 20 20 VGS= 7 V 15 15 10 10 VGS= 6 V 5 0 0 5 15 10 20 5 VDS(V) 0 3 5 4 7 6 9 VGS(V) 8 Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on-resistance AM12474v1 VGS (V) VDS (V) 500 VDD=520V 12 ID=7.5A VDS RDS(on) (Ω) 0.24 AM12475v1 VGS=10V 0.23 10 400 8 300 0.22 0.21 0.2 6 200 4 0.19 0.18 100 2 0 0 Figure 12. 0.17 5 10 15 20 25 30 0 Qg(nC) Capacitance variations 2 4 6 8 10 12 14 ID(A) Figure 13. Output capacitance stored energy AM12476v1 C (pF) 0.16 0 AM12484v1 Eoss (µJ) 6 10000 5 Ciss 1000 4 3 100 Coss 10 2 1 Crss 1 0.1 1 10 100 VDS(V) Doc ID 022879 Rev 3 0 0 200 400 600 VDS(V) 7/19 Electrical characteristics STF18N65M5, STI18N65M5, STP18N65M5, STW18N65M5 Figure 14. Normalized gate threshold voltage vs temperature AM12471v1 VGS(th) (norm) 1.10 ID = 250 µA VDS = VGS Figure 15. Normalized on-resistance vs temperature 1.9 1.00 AM12483v1 RDS(on) (norm) 2.1 VGS= 10V ID= 17.5 A 1.7 1.5 1.3 0.90 1.1 0.9 0.80 0.7 0.70 -50 -25 25 0 50 TJ(°C) 75 100 Figure 16. Drain-source diode forward characteristics 0 25 50 75 100 TJ(°C) Figure 17. Normalized BVDSS vs temperature AM05461v1 VSD (V) 0.5 -50 -25 AM10399v1 VDS (norm) TJ=-50°C 1.08 1.2 ID = 1mA 1.06 1.0 1.04 0.8 1.02 TJ=25°C 1.00 0.6 TJ=150°C 0.98 0.4 0.96 0.2 0 0.94 0 10 30 20 40 50 ISD(A) 0.92 -50 -25 Figure 18. Switching losses vs gate resistance (1) AM12485v1 E (μJ) VDD=400V VGS=10V ID=9.5A 160 140 Eon 120 100 80 60 Eoff 40 20 0 0 10 20 30 40 RG(Ω) 1. Eon including reverse recovery of a SiC diode 8/19 Doc ID 022879 Rev 3 0 25 50 75 100 TJ(°C) STF18N65M5, STI18N65M5, STP18N65M5, STW18N65M5 3 Test circuits Test circuits Figure 19. Switching times test circuit for resistive load Figure 20. Gate charge test circuit 6$$ 6 K K N&  &  2, & 6'3 )'#/.34 6$$  6I66'-!8 6$ 2'  & $54 $54 6' K 07 K K 07 !-V !-V Figure 21. Test circuit for inductive load Figure 22. Unclamped inductive load test switching and diode recovery times circuit ! ! $54 &!34 $)/$% " " , ! $ ' 3 6$ , (  & "   & $ 6$$  &  & 6$$ )$ ' 2' 3 6I $54 0W !-V Figure 23. Unclamped inductive waveform 6"2 $33 !-V Figure 24. Switching time waveform Concept waveform for Inductive Load Turn-off Id 6$ 90%Vds 90%Id Tdelay-off -off )$Vgs 90%Vgs on )$ Vgs(I(t)) )) 6$$ 6$$ 10%Id 10%Vds Vds Trise !-V Doc ID 022879 Rev 3 Tfall Tcross --over AM05540v2 9/19 Package mechanical data 4 STF18N65M5, STI18N65M5, STP18N65M5, STW18N65M5 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Table 9. TO-220FP mechanical data mm Dim. Min. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 10/19 Typ. 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 Doc ID 022879 Rev 3 STF18N65M5, STI18N65M5, STP18N65M5, STW18N65M5 Package mechanical data Figure 25. TO-220FP drawing 7012510_Rev_K_B Doc ID 022879 Rev 3 11/19 Package mechanical data Table 10. STF18N65M5, STI18N65M5, STP18N65M5, STW18N65M5 I²PAK (TO-262) mechanical data mm. DIM. min. 12/19 typ max. A 4.40 4.60 A1 2.40 2.72 b 0.61 0.88 b1 1.14 1.70 c 0.49 0.70 c2 1.23 1.32 D 8.95 9.35 e 2.40 2.70 e1 4.95 5.15 E 10 10.40 L 13 14 L1 3.50 3.93 L2 1.27 1.40 Doc ID 022879 Rev 3 STF18N65M5, STI18N65M5, STP18N65M5, STW18N65M5 Package mechanical data Figure 26. I²PAK (TO-262) drawing 0004982_Rev_H Doc ID 022879 Rev 3 13/19 Package mechanical data Table 11. STF18N65M5, STI18N65M5, STP18N65M5, STW18N65M5 TO-220 type A mechanical data mm Dim. Min. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 14/19 Typ. 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 ∅P 3.75 3.85 Q 2.65 2.95 Doc ID 022879 Rev 3 STF18N65M5, STI18N65M5, STP18N65M5, STW18N65M5 Package mechanical data Figure 27. TO-220 type A drawing 0015988_typeA_Rev_S Doc ID 022879 Rev 3 15/19 Package mechanical data Table 12. STF18N65M5, STI18N65M5, STP18N65M5, STW18N65M5 TO-247 mechanical data mm. Dim. Min. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 L 14.20 14.80 L1 3.70 4.30 L2 16/19 Typ. 5.45 5.60 18.50 ∅P 3.55 3.65 ∅R 4.50 5.50 S 5.30 Doc ID 022879 Rev 3 5.50 5.70 STF18N65M5, STI18N65M5, STP18N65M5, STW18N65M5 Package mechanical data Figure 28. TO-247 drawing 0075325_G Doc ID 022879 Rev 3 17/19 Revision history 5 STF18N65M5, STI18N65M5, STP18N65M5, STW18N65M5 Revision history Table 13. 18/19 Document revision history Date Revision Changes 01-Mar-2012 1 First release. 11-Jul-2012 2 The part numbers STB18N65M5 and STD18N65M5 have been moved to a separate datasheet. The part numbers STI18N65M5 and STW18N65M5 in I²PAK and TO-247 packages have been added. Document status promoted from preliminary data to production data. Added Section 2.1: Electrical characteristics (curves). 19-Jul-2012 3 Updated Figure 8: Output characteristics, Figure 11: Static drainsource on-resistance and Figure 14: Normalized gate threshold voltage vs temperature. Doc ID 022879 Rev 3 STF18N65M5, STI18N65M5, STP18N65M5, STW18N65M5 Please Read Carefully: Information in this document is provided solely in connection with ST products. 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