STP19N06LFI

STP19N06L STP19N06LFI N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE STP19N06L STP19N06LFI s s s s s s s s VDSS 60 V 60 V R DS(on) < 0.1 Ω < 0.1 Ω ID 19 A 13 A TYPICAL RDS(on) = 0.085 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE LOGIC LEVEL COMPATIBLE INPUT 175 oC OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION 3 1 2 1 2 3 TO-220 ISOWATT220 APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s REGULATORS s DC-DC & DC-AC CONVERTERS s MOTOR CONTROL, AUDIO AMPLIFIERS s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS S ymbol Parameter STP19N06L V DS V DGR V GS ID ID I DM ( •) P tot V ISO T stg Tj Drain-source Voltage (V GS = 0 ) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 o C Drain Current (pulsed) Total Dissipation at T c = 2 5 C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature o o Value STP19N06LFI 60 60 ± 15 19 13 76 80 0.53  -65 to 175 175 13 9 76 35 0.23 2000 Unit V V V A A A W W/o C V o o C C (•) Pulse width limited by safe operating area February 1995 1/7 STP19N06L/FI THERMAL DATA TO-220 R thj-case R thj-amb R t hc-sink Tl Thermal Resistance Junction-case Max 1.88 62.5 0.5 300 Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose ISOWATT220 4.29 o o o C/W C/W C/W o C AVALANCHE CHARACTERISTICS Symbol IA R E AS E AR IA R Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j m ax, δ < 1%) Single Pulse Avalanche Energy (starting T j = 25 o C, I D = I AR , V DD = 2 5 V) Repetitive Avalanche Energy (pulse width limited by T j m ax, δ < 1%) Avalanche Current, Repetitive or Not-Repetitive (T c = 100 o C, pulse width limited by T j m ax, δ < 1%) Max Value 19 76 19 13 Unit A mJ mJ A ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol V(BR)DSS I DS S I GSS Parameter Drain-source Breakdown Voltage Test Conditions I D = 250 µ A VGS = 0 Min. 60 250 1000 ± 100 Typ. Max. Unit V µA µA nA Zero Gate Voltage V DS = M ax Rating Drain Current (V GS = 0) V DS = M ax Rating x 0.8 Gate-body Leakage Current (V DS = 0 ) V GS = ± 1 5 V T c = 125 o C ON (∗) Symbol V GS(th) R DS(on) I D(on) Parameter Gate Threshold Voltage V DS = V GS Static Drain-source On Resistance Test Conditions I D = 2 50 µ A T c = 100o C 19 Min. 1 Typ. 1.7 0.085 Max. 2.5 0.1 0.2 Unit V Ω Ω A V GS = 5 V I D = 9.5 A V GS = 5 V I D = 9.5 A On State Drain Current V DS > I D(on) x R DS(on)max V GS = 1 0 V DYNAMIC Symbol gfs ( ∗ ) C iss C oss C rss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions V DS > I D(on) x R DS(on)max V DS = 2 5 V f = 1 MHz I D = 9 .5 A VGS = 0 Min. 7 Typ. 9 700 230 80 900 300 100 Max. Unit S pF pF pF 2/7 STP19N06L/FI ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol t d(on) tr (di/dt) on Parameter Turn-on Time Rise Time Turn-on Current Slope Test Conditions V DD = 3 0 V ID = 9.5 A R G = 4.7 Ω V GS = 5 V (see test circuit, figure 3) V DD = 4 0 V ID = 19 A R G = 47 Ω VGS = 5 V (see test circuit, figure 5) V DD = 40 V ID = 1 9 A V GS = 5 V Min. Typ. 15 165 70 Max. 21 230 Unit ns ns A/ µ s Qg Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge 18 7 9 26 nC nC nC SWITCHING OFF Symbol t r(Vof f) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions V DD = 4 0 V ID = 19 A R G = 47 Ω VGS = 5 V (see test circuit, figure 5) Min. Typ. 50 95 165 Max. 70 135 230 Unit ns ns ns SOURCE DRAIN DIODE Symbol IS D I SDM ( • ) VS D ( ∗ ) t rr Q rr I RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 1 9 A V GS = 0 60 0.13 4.6 I SD = 19 A di/dt = 100 A/ µ s V DD = 30 V T j = 1 50 o C (see test circuit, figure 5) Test Conditions Min. Typ. Max. 19 76 1.6 Unit A A V ns µC A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area 3/7 STP19N06L/FI Fig. 1: Unclamped Inductive Load Test Circuits Fig. 2: Unclamped Inductive Waveforms Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge Test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Reverse Recovery Time 4/7 STP19N06L/FI TO-220 MECHANICAL DATA DIM. MIN. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA. 13.0 2.65 15.25 6.2 3.5 3.75 0.49 0.61 1.14 1.14 4.95 2.4 10.0 16.4 14.0 2.95 15.75 6.6 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 4.40 1.23 2.40 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 0.551 0.116 0.620 0.260 0.154 0.151 mm TYP. MAX. 4.60 1.32 2.72 MIN. 0.173 0.048 0.094 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 inch TYP. MAX. 0.181 0.051 0.107 A C D1 L2 F1 D G1 E Dia. L5 L7 L6 L4 P011C L9 F2 F G H2 5/7 STP19N06L/FI ISOWATT220 MECHANICAL DATA DIM. MIN. A B D E F F1 F2 G G1 H L2 L3 L4 L6 L7 Ø 28.6 9.8 15.9 9 3 4.4 2.5 2.5 0.4 0.75 1.15 1.15 4.95 2.4 10 16 30.6 10.6 16.4 9.3 3.2 1.126 0.385 0.626 0.354 0.118 mm TYP. MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.015 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 A B L3 L6 L7 F1 D Ø H F G1 E F2 123 L2 L4 P011G 6/7 G STP19N06L/FI Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 7/7