STP1N105K3

STF1N105K3, STFW1N105K3, STP1N105K3 N-channel 1050 V, 8 Ω typ., 1.4 A SuperMESH3™ Power MOSFET in TO-220FP, TO-3PF and TO-220 packages Datasheet — production data Features Order codes TAB VDS RDS(on) max PTOT ID 1 3 STF1N105K3 STFW1N105K3 1050 V 1 11 Ω 3 2 2 20 W 1 TO-220FP 1.4 A STP1N105K3 TO-3PF 60 W ■ Gate charge minimized ■ Extremely large avalanche performance ■ 100% avalanche tested ■ Very low intrinsic capacitance 3 2 1 TO-220 Applications ■ Figure 1. Switching applications Internal schematic diagram Description ' These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low onresistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications. * 6 $0Y Table 1. Device summary Order codes Marking STF1N105K3 STFW1N105K3 STP1N105K3 January 2013 This is information on a product in full production. Package Packaging TO-220FP 1N105K3 TO-3PF Tube TO-220 Doc ID 023509 Rev 2 1/18 www.st.com 18 Contents STF1N105K3, STFW1N105K3, STP1N105K3 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 2/18 .............................................. 9 Doc ID 023509 Rev 2 STF1N105K3, STFW1N105K3, STP1N105K3 1 Electrical ratings Electrical ratings . Table 2. Absolute maximum ratings Value Symbol Parameter Unit TO-220FP TO-3PF TO-220 VDS Drain source voltage 1050 V VGS Gate- source voltage ± 30 V ID ID IDM (2) PTOT Drain current (continuous) at TC = 25 °C 1.4(1) 1.4 A Drain current (continuous) at TC = 100 °C 0.9(1) 0.9 A Drain current (pulsed) 5.6(1) 5.6 A 20 60 W Total dissipation at TC = 25 °C IAR Max current during repetitive or single pulse avalanche (pulse width limited by Tjmax ) 1.2 A EAS Single pulse avalanche energy (starting TJ = 25 °C, ID=IIAR, VDD= 50 V) 130 mJ VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; TC = 25 °C) dv/dt (3) Tj Tstg 2500 3500 Peak diode recovery voltage slope Operating junction temperature Storage temperature V 6 V/ns - 55 to 150 °C 1. Limited by maximum junction temperature. 2. Pulse width limited by safe operating area. 3. ISD ≤ 1.4 A, di/dt ≤ 100 A/μs, VDD = 80% V(BR)DSS, VDS peak ≤ V(BR)DSS. Table 3. Thermal data Value Symbol Parameter Unit TO-220FP Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-amb max Doc ID 023509 Rev 2 TO-3PF 6.25 62.50 50 TO-220 2.08 °C/W 62.50 °C/W 3/18 Electrical characteristics 2 STF1N105K3, STFW1N105K3, STP1N105K3 Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 4. Symbol On/off states Parameter Test conditions Min. Typ. Max. Unit Drain-source breakdown voltage ID = 1 mA, VGS= 0 IDSS Zero gate voltage drain current (VGS = 0) VDS = 1050 V, VDS = 1050 V, Tc=125 °C 1 50 μA μA IGSS Gate body leakage current (VDS = 0) VGS = ± 20 V ±50 μA VGS(th) Gate threshold voltage VDS = VGS, ID = 50 μA 3 4.5 V RDS(on) Static drain-source onresistance VGS = 10 V, ID= 0.6 A 8 11 Ω Typ. Max. Unit V(BR)DSS Table 5. Symbol 1050 2 V Dynamic Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Test conditions Min. 180 pF 15 VDS =100 V, f=1 MHz, VGS=0 - pF - 1 Co(tr)(1) Equivalent capacitance time related Co(er)(2) Equivalent capacitance energy related RG Intrinsic gate resistance f = 1 MHz open drain Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 840 V, ID = 1.2 A VGS =10 V (see Figure 18) pF - 11 - pF - 7 - pF - 18 - Ω - 13 1.6 8 - nC nC nC VGS = 0, VDS = 0 to 840 V 1. Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS increases from 0 to 80% VDSS 4/18 Doc ID 023509 Rev 2 STF1N105K3, STFW1N105K3, STP1N105K3 Table 6. Switching times Symbol Parameter td(on) tr td(off) tf Table 7. Symbol ISD ISDM VSD(1) trr Qrr IRRM trr Qrr IRRM 1. Turn-on delay time Rise time Turn-off delay time Fall time Electrical characteristics Test conditions Min. Typ. Max. Unit VDD = 525 V, ID = 0.6 A, RG=4.7 Ω, VGS=10 V (see Figure 20) - 6 7 27 50 - ns ns ns ns Test conditions Min. Typ. Max. Unit - 1.4 5.6 mA A Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage ISD= 1.2 A, VGS=0 - 1.5 V Reverse recovery time Reverse recovery charge Reverse recovery current ISD= 1.2 A, VDD= 60 V di/dt = 100 A/μs, (see Figure 19) - 244 1 9 ns μC A Reverse recovery time Reverse recovery charge Reverse recovery current ISD= 1.2 A,VDD= 60 V di/dt=100 A/μs, Tj=25 °C(see Figure 19) - 330 1.3 8 ns μC A Pulsed: pulse duration = 300 μs, duty cycle 1.5% Doc ID 023509 Rev 2 5/18 Electrical characteristics STF1N105K3, STFW1N105K3, STP1N105K3 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220FP and TO-3PF Figure 3. Thermal impedance for TO-220FP and TO-3PF Figure 5. Thermal impedance for TO-220 Figure 7. Transfer characteristics $0Y 2S /LP HUDW LWH LRQĆ GĆE LQĆ \ĆP WKLV D[ ĆDUH Ć5 '6 DĆLV RQ  ,' $   —V —V PV 7M ƒ& PV 7F ƒ& 6LQJOH SXOVH   Figure 4.     9'69 Safe operating area for TO-220 $0Y ,' $ —V 6 RQ   2S /LP HUDW LWH LRQĆ GĆE LQĆ \ĆP WKLV D[ ĆDUH Ć5 DĆ ' LV —V  PV PV 7M ƒ& 7F ƒ& 6LQJOH SXOVH   Figure 6.     9'69 Output characteristics $0Y ,' $ 9*6 ĆĆĆĆ9   $0Y ,' $ 9'6 9   9     9   6/18     9'69  Doc ID 023509 Rev 2      9*69 STF1N105K3, STFW1N105K3, STP1N105K3 Figure 8. Electrical characteristics Gate charge vs gate-source voltage Figure 9. $0Y 9'6 9 9*6 9 Static drain-source on-resistance $0Y 5'6RQ 2KP 9'' 9 9*6 9  ,' $  9'6                      4JQ&  Figure 10. Capacitance variations       ,'$ Figure 11. Output capacitance stored energy $0Y & S)  $0Y (RVV —-   &LVV    &RVV &UVV        Figure 12. Normalized gate threshold voltage vs temperature $0Y 9*6WK QRUP       9'69 Figure 13. Normalized on-resistance vs temperature $0Y 5'6RQ QRUP  ,' Ɨ$    9'69 9*6 9 ,' $                  7-ƒ& Doc ID 023509 Rev 2       7-ƒ& 7/18 Electrical characteristics STF1N105K3, STFW1N105K3, STP1N105K3 Figure 14. Source-drain diode forward characteristics Figure 15. Normalized BVDSS vs temperature $0Y 96' 9  7- ƒ&   7- ƒ&         7- ƒ&            ,6'$   Figure 16. Maximum avalanche energy vs starting Tj $0Y ($6 P-                 8/18 ,' ĆP$    $0Y %9'66 QRUP  ,' Ć$ 9'' Ć9        7-ƒ& Doc ID 023509 Rev 2     7-ƒ& STF1N105K3, STFW1N105K3, STP1N105K3 3 Test circuits Test circuits Figure 17. Switching times test circuit for resistive load Figure 18. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 19. Test circuit for inductive load Figure 20. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 21. Unclamped inductive waveform AM01471v1 Figure 22. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 0 Doc ID 023509 Rev 2 10% AM01473v1 9/18 Package mechanical data 4 STF1N105K3, STFW1N105K3, STP1N105K3 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 10/18 Doc ID 023509 Rev 2 STF1N105K3, STFW1N105K3, STP1N105K3 Table 8. Package mechanical data TO-220FP mechanical data mm Dim. Min. Typ. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 Doc ID 023509 Rev 2 11/18 Package mechanical data STF1N105K3, STFW1N105K3, STP1N105K3 Figure 23. TO-220FP drawing 7012510_Rev_K_B 12/18 Doc ID 023509 Rev 2 STF1N105K3, STFW1N105K3, STP1N105K3 Table 9. Package mechanical data TO-3PF mechanical data mm Dim. Min. Typ. Max. A 5.30 5.70 C 2.80 3.20 D 3.10 3.50 D1 1.80 2.20 E 0.80 1.10 F 0.65 0.95 F2 1.80 2.20 G 10.30 11.50 G1 5.45 H 15.30 L 9.80 L2 22.80 23.20 L3 26.30 26.70 L4 43.20 44.40 L5 4.30 4.70 L6 24.30 24.70 L7 14.60 15 N 1.80 2.20 R 3.80 4.20 Dia 3.40 3.80 Doc ID 023509 Rev 2 15.70 10 10.20 13/18 Package mechanical data STF1N105K3, STFW1N105K3, STP1N105K3 Figure 24. TO-3PF drawing L3 L D E A C D1 Dia L2 L6 L7 F2(3x) F(3x) G1 H G R L5 N L4 7627132_C 14/18 Doc ID 023509 Rev 2 STF1N105K3, STFW1N105K3, STP1N105K3 Table 10. Package mechanical data TO-220 type A mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 ∅P 3.75 3.85 Q 2.65 2.95 Doc ID 023509 Rev 2 15/18 Package mechanical data STF1N105K3, STFW1N105K3, STP1N105K3 Figure 25. TO-220 type A drawing 0015988_typeA_Rev_S 16/18 Doc ID 023509 Rev 2 STF1N105K3, STFW1N105K3, STP1N105K3 5 Revision history Revision history Table 11. Document revision history Date Revision Changes 13-Aug-2012 1 First release. 23-Jan-2013 2 Added device in TO-3PF. Doc ID 023509 Rev 2 17/18 STF1N105K3, STFW1N105K3, STP1N105K3 Please Read Carefully: Information in this document is provided solely in connection with ST products. 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