STB200N6F3, STI200N6F3
STP200N6F3
N-channel 60 V, 3 mΩ, 120 A D2PAK, TO-220, I2PAK
STripFET™ Power MOSFET
Features
Type
VDSS
STB200N6F3
60 V
RDS(on)
< 3.5 mΩ
ID
Pw
(1)
330 W
(1)
330 W
120 A
STI200N6F3
60 V
< 3.8 mΩ
120 A
STP200N6F3
60 V
< 3.8 mΩ
120 A(1) 330 W
1. Value limited by wire bonding
■
Ultra low on-resistance
■
100% avalanche tested
3
3
1
2
TO-220
3
12
1
D2PAK
I2PAK
Application
■
Switching applications
Figure 1.
Description
Internal schematic diagram
This STripFET™ III Power MOSFET technology
is among the latest improvements, which have
been especially tailored to minimize on-state
resistance providing superior switching
performance.
$
'
3
!-V
Table 1.
Device summary
Order codes
Marking
Package
Packaging
STB200N6F3
200N6F3
D2PAK
Tape and reel
STI200N6F3
200N6F3
2PAK
Tube
STP200N6F3
200N6F3
TO-220
Tube
November 2009
Doc ID 15606 Rev 2
I
1/16
www.st.com
16
Contents
STB200N6F3, STI200N6F3, STP200N6F3
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................ 6
3
Test circuits
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
6
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
2/16
.............................................. 9
Doc ID 15606 Rev 2
STB200N6F3, STI200N6F3, STP200N6F3
1
Electrical ratings
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Parameter
VDS
Drain-source voltage (VGS=0)
VGS
Value
Unit
60
V
Gate-source voltage
± 20
V
(1)
Drain current (continuous) at TC = 25°C
120
A
ID (1)
Drain current (continuous) at TC=100°C
120
A
Drain current (pulsed)
480
A
Total dissipation at TC = 25°C
330
W
Derating factor
2.2
W/°C
EAS (3)
Single pulse avalanche energy
918
mJ
Tj
Tstg
Operating junction temperature
storage temperature
-55 To 175
°C
ID
IDM
(2)
PTOT
1. Current limited by package.
2. Pulse width limited by safe operating area.
3. Starting Tj = 25 °C, ID = 60 A, VDD = 35 V (see Figure 18 and Figure 19)
Table 3.
Symbol
Rthj-case
Thermal data
Parameter
Thermal resistance junction-case
Rthj-a
Thermal resistance junction-ambient
max
Rthj-pcb(1)
Thermal resistance junction-ambient
max
Tl
TO-220/I²PAK
Maximum lead temperature for
soldering purpose
D²PAK
0.45
Unit
°C/W
62.5
°C/W
50
300
°C/W
°C
1. When mounted on 1 inch² FR4 2oz Cu.
Doc ID 15606 Rev 2
3/16
Electrical characteristics
2
STB200N6F3, STI200N6F3, STP200N6F3
Electrical characteristics
(TCASE=25 °C unless otherwise specified)
Table 4.
Symbol
Parameter
Test conditions
Drain-source breakdown
voltage
ID = 250 µA, VGS= 0
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS= max rating,
VDS= max rating,@125°C
IGSS
Gate body leakage current
VGS = ±20 V
(VDS = 0)
V(BR)DSS
VGS(th)
Gate threshold voltage
VDS= VGS, ID = 250 µA
RDS(on)
Static drain-source on
resistance
VGS= 10 V, ID= 60 A
D²PAK
TO-220, I²PAK
Table 5.
Symbol
4/16
On/off states
Min.
Typ.
Max.
60
Unit
V
10
100
µA
µA
±200
nA
4
V
3
3.3
3.5
3.8
mΩ
mΩ
Min.
Typ.
Max.
Unit
-
6265
1295
43
-
pF
pF
pF
-
ns
ns
ns
ns
-
nC
nC
nC
2
Dynamic
Parameter
Test conditions
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25 V, f = 1MHz,
VGS = 0
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 30 V, ID = 60 A
RG = 4.7 Ω VGS = 10 V
(see Figure 15,
Figure 20)
-
26
75
86
14
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 30 V, ID = 120 A,
VGS = 10 V,
(see Figure 16)
-
101
36
25.2
Doc ID 15606 Rev 2
STB200N6F3, STI200N6F3, STP200N6F3
Table 6.
Symbol
Electrical characteristics
Source drain diode
Parameter
Test conditions
Min.
Max.
Unit
-
120
480
A
A
1.5
V
ISDM(1)
Source-drain current
Source-drain current
(pulsed)
VSD(2)
Forward on voltage
ISD=120 A, VGS=0
-
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=120 A,
di/dt = 100 A/µs,
VDD=48 V, Tj=150 °C
(see Figure 17)
-
ISD
trr
Qrr
IRRM
Typ.
67
177.6
5.3
ns
nC
A
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Doc ID 15606 Rev 2
5/16
Electrical characteristics
STB200N6F3, STI200N6F3, STP200N6F3
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area for TO-220,
I²PAK
Figure 3.
Thermal impedance for TO-220,
I²PAK
AM05515v1
ID
(A)
δ=0.5
s a DS(o
thi
in ax R
n
o
ym
ati
er d b
Op ite
m
Li
100
280tok
K
s
ai
re n)
0.2
100µs
0.1
1ms
10
0.05
-1
10
0.02
10ms
Tj=175°C
Tc=25°C
1
Single pulse
Single
pulse
0.1
0.1
Figure 4.
Zth=k Rthj-c
δ=tp/τ
0.01
tp
τ
-2
10
1
VDS(V)
Safe operating area for D²PAK
10 -5
10
-4
10
Figure 5.
-3
10
-2
-1
10
Thermal impedance for D²PAK
!-V
)$
!
δ=0.5
RE N
SA O
THI 2$3
N
X
I
ON MA
Y
ATI
ER DB
P
E
/
IT
,IM
280tok
K
S
AI
0.2
S
0.1
MS
0.05
-1
10
4J #
4C #
0.02
3INGLE
PULSE
tp (s)
10
MS
Zth=k Rthj-c
δ=tp/τ
0.01
Single pulse
tp
τ
-2
Figure 6.
ID
(A)
6$36
Output characteristics
10 -5
10
Figure 7.
AM05516v1
VGS=10V
-4
10
-1
10
10
tp (s)
Transfer characteristics
AM05517v1
ID
(A)
VDS=10V
350
350
-3
10
-2
300
300
7V
250
250
200
200
6V
150
150
100
100
50
0
0
6/16
50
5V
1
2
3
4
5
VDS(V)
Doc ID 15606 Rev 2
0
0
2
4
6
8
10
VGS(V)
STB200N6F3, STI200N6F3, STP200N6F3
Figure 8.
Electrical characteristics
Normalized BVDSS vs temperature
AM00897v1
BVDSS
(norm)
Figure 9.
Static drain-source on resistance
AM05519v1
RDS(on)
(mΩ)
3.25
1.06
1.03
3.20
1.00
3.15
0.98
3.10
0.95
3.05
0.92
-50 -25
25
0
50
75 100
TJ(°C)
3.00
0
20
10
30
50
40
ID(A)
60
Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations
AM05520v1
VGS
(V)
VDD=30V
ID=120A
12
AM05521v1
C
(pF)
14010
12010
10
10010
8
8010
6
Ciss
6010
4
4010
2
2010
0
0
40
20
60
80
100 120 Qg(nC)
Figure 12. Normalized gate threshold voltage
vs temperature
!-V
6'3TH
NORM
10
0
Coss
Crss
10
20
30
40
50
VDS(V)
Figure 13. Normalized on resistance vs
temperature
!-V
2$3ON
NORM
4* #
Doc ID 15606 Rev 2
4* #
7/16
Electrical characteristics
STB200N6F3, STI200N6F3, STP200N6F3
Figure 14. Source-drain diode forward
characteristics
AM05524v1
VSD
(V)
0.9
TJ=-55°C
0.8
TJ=25°C
0.7
0.6
TJ=175°C
0.5
0.4
0.3
0
8/16
10
20
30
40
50
ISD(A)
Doc ID 15606 Rev 2
STB200N6F3, STI200N6F3, STP200N6F3
3
Test circuits
Test circuits
Figure 15. Switching times test circuit for
resistive load
Figure 16. Gate charge test circuit
VDD
12V
47kΩ
1kΩ
100nF
3.3
µF
2200
RL
µF
VGS
IG=CONST
VDD
100Ω
Vi=20V=VGMAX
VD
RG
2200
µF
D.U.T.
D.U.T.
VG
2.7kΩ
PW
47kΩ
1kΩ
PW
AM01468v1
AM01469v1
Figure 17. Test circuit for inductive load
Figure 18. Unclamped inductive load test
switching and diode recovery times
circuit
A
A
D.U.T.
FAST
DIODE
B
B
L
A
D
G
VD
L=100µH
S
3.3
µF
B
25 Ω
1000
µF
D
VDD
2200
µF
3.3
µF
VDD
ID
G
RG
S
Vi
D.U.T.
Pw
AM01470v1
Figure 19. Unclamped inductive waveform
AM01471v1
Figure 20. Switching time waveform
ton
V(BR)DSS
tdon
VD
toff
tr
tdoff
tf
90%
90%
IDM
10%
ID
VDD
10%
0
VDD
VDS
90%
VGS
AM01472v1
0
Doc ID 15606 Rev 2
10%
AM01473v1
9/16
Package mechanical data
4
STB200N6F3, STI200N6F3, STP200N6F3
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.
10/16
Doc ID 15606 Rev 2
STB200N6F3, STI200N6F3, STP200N6F3
Package mechanical data
D2PAK (TO-263) mechanical data
Dim
A
A1
b
b2
c
c2
D
D1
E
E1
e
e1
H
J1
L
L1
L2
R
V2
mm
Min
Typ
4.40
0.03
0.70
1.14
0.45
1.23
8.95
7.50
10
8.50
in c h
Max
4.60
0.23
0.93
1.70
0.60
1.36
9.35
10.40
Min
0.173
0.001
0.027
0.045
0.017
0.048
0.352
0.295
0.394
0.334
2.54
4.88
15
2.49
2.29
1.27
1.30
Max
0.181
0.009
0.037
0.067
0.024
0.053
0.368
0.409
0.1
5.28
15.85
2.69
2.79
1.40
1.75
0.192
0.590
0.099
0.090
0.05
0.051
8°
0°
0.4
0°
Typ
0.208
0.624
0.106
0.110
0.055
0.069
0.016
8°
0079457_M
Doc ID 15606 Rev 2
11/16
Package mechanical data
STB200N6F3, STI200N6F3, STP200N6F3
I²PAK (TO-262) mechanical data
mm
inch
Dim
Min
A
A1
b
b1
c
c2
D
e
e1
E
L
L1
L2
12/16
Typ
4.40
2.40
0.61
1.14
0.49
1.23
8.95
2.40
4.95
10
13
3.50
1.27
Doc ID 15606 Rev 2
Max
Min
4.60
2.72
0.88
1.70
0.70
1.32
9.35
2.70
5.15
10.40
14
3.93
1.40
0.173
0.094
0.024
0.044
0.019
0.048
0.352
0.094
0.194
0.393
0.511
0.137
0.050
Typ
Max
0.181
0.107
0.034
0.066
0.027
0.052
0.368
0.106
0.202
0.410
0.551
0.154
0.055
STB200N6F3, STI200N6F3, STP200N6F3
Package mechanical data
TO-220 type A mechanical data
mm
Dim
Min
A
b
b1
c
D
D1
E
e
e1
F
H1
J1
L
L1
L20
L30
∅P
Q
Typ
4.40
0.61
1.14
0.48
15.25
Max
4.60
0.88
1.70
0.70
15.75
1.27
10
2.40
4.95
1.23
6.20
2.40
13
3.50
10.40
2.70
5.15
1.32
6.60
2.72
14
3.93
16.40
28.90
3.75
2.65
3.85
2.95
0015988_Rev_S
Doc ID 15606 Rev 2
13/16
Packaging mechanical data
5
STB200N6F3, STI200N6F3, STP200N6F3
Packaging mechanical data
D2PAK FOOTPRINT
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
DIM.
mm
MIN.
A
DIM.
mm
inch
MIN.
MAX.
MIN.
A0
10.5
10.7
0.413 0.421
MAX.
B0
15.7
15.9
0.618 0.626
D
1.5
1.6
0.059 0.063
D1
1.59
1.61
0.062 0.063
E
1.65
1.85
0.065 0.073
F
11.4
11.6
0.449 0.456
K0
4.8
5.0
0.189 0.197
0.153 0.161
P0
3.9
4.1
P1
11.9
12.1
0.468 0.476
P2
1.9
2.1
0.075 0.082
R
50
1.574
T
0.25
0.35 0.0098 0.0137
W
23.7
24.3
0.933 0.956
* on sales type
14/16
Doc ID 15606 Rev 2
MIN.
330
B
1.5
C
12.8
D
20.2
G
24.4
N
100
T
TAPE MECHANICAL DATA
inch
MAX.
MAX.
12.992
0.059
13.2
0.504 0.520
26.4
0.960 1.039
0795
3.937
30.4
1.197
BASE QTY
BULK QTY
1000
1000
STB200N6F3, STI200N6F3, STP200N6F3
6
Revision history
Revision history
Table 7.
Document revision history
Date
Revision
Changes
20-Apr-2009
1
First version.
18-Nov-2009
2
Document status promoted from preliminary data to datasheet.
Doc ID 15606 Rev 2
15/16
STB200N6F3, STI200N6F3, STP200N6F3
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Doc ID 15606 Rev 2