STP200NF04L

STP200NF04L STB200NF04L - STB200NF04L-1 N-CHANNEL 40V - 3 mΩ - 120 A TO-220/D²PAK/I²PAK STripFET™ II MOSFET Figure 1: Package Table 1: General Features TYPE STB200NF04L STP200NF04L STB200NF04L-1 ■ ■ ■ VDSS RDS(on) ID 40 V 40 V 40 V 3.5 mΩ 3.8 mΩ 3.8 mΩ 120 A 120 A 120 A TYPICAL RDS(on) = 3mΩ 100% AVALANCHE TESTED LOW THERESHOLD DRIVE DESCRIPTION This MOSFET is the latest development of STMicroelectronics unique “Single Feature Size™” stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and lesscritical alignement steps therefore a remarkable manufacturing reproducibility. This new improved device has been specifically designed for Automotive applications. 3 1 3 2 1 TO-220 D²PAK 3 12 I²PAK Figure 2: Internal Schematic Diagram APPLICATIONS ■ HIGH CURRENT, HIGH SWITCHING SPEED Table 2: Order Codes PART NUMBER MARKING PACKAGE PACKAGING STP200NF04L P200NF04L TO-220 TUBE STB200NF04L B200NF04L D²PAK TAPE & REEL STB200NF04L-1 B200NF04L I²PAK TUBE Rev. 1 April 2005 1/12 STP200NF04L - STB200NF04L - STB200NF04L-1 Table 3: Absolute Maximum ratings Symbol VDS VGDR VGS Parameter Value Unit Drain-source Voltage (VGS = 0) 40 V Drain-gate Voltage (RGS=20 KΩ) 40 V Gate- source Voltage ± 16 V ID (**) Drain Current (continuous) at TC = 25°C 120 A ID Drain Current (continuous) at TC = 100°C 120 A Drain Current (pulsed) 480 A Total Dissipation at TC = 25°C 300 W 2 W/°C IDM (2) PTOT Derating Factor dv/dt (1) Peak Diode Recovery voltage slope 3.6 V/ns EAS (3) Single Pulse Avalanche Energy 1.4 J -55 to 175 °C Tstg Tj Storage Temperature Max. Operating Junction Temperature (1)ISD ≤ 100 A, di/dt ≤ 240 A/µs, VDD ≤ 32 , Tj ≤ TJMAX (2) Pulse width limited by safe operating area. (3) Starting Tj = 25°C, IAR = 50A, VDD = 30V (**) Current limited by Package Table 4: Thermal Data TO-220/I²PAK Rthj-case Thermal Resistance Junction-case Max Rthj-pcb (*) Thermal Resistance Junction-pcb Max Thermal Resistance Junction-ambient Max Rthja Tl Maximum Lead Temperature For Soldering Purpose D²PAK Unit 0.50 °C/W 35 62.5 -- 300 -- °C/W °C (*)When mounted on 1 inch² FR4 2oZ Cu ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) Table 5: On/Off Symbol V(BR)DSS 2/12 Parameter Drain-source Breakdown Voltage Test Conditions Min. ID = 250 µA, VGS = 0 IDSS VDS= Max Rating Zero Gate Voltage Drain Current (VGS = 0) VD = Max Rating, TC= 125 °C IGSS Gate-body Leakage Current (VDS = 0) Typ. 40 VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA Static Drain-source On Resistance Unit V VGS = ± 16V RDS(on) Max. 1 1 10 µA µA ±100 nA 4 V VGS = 10 V, ID = 50 A VGS = 5 V, ID = 50 A TO-220 I²PAK 3.3 3.8 3.8 4.6 mΩ mΩ VGS = 10 V, ID = 50 A VGS = 5 V, ID = 50 A D²PAK 3.0 3.5 3.5 4.3 mΩ mΩ STP200NF04L - STB200NF04L - STB200NF04L-1 ELECTRICAL CHARACTERISTICS (CONTINUED) Table 6: Dynamic Symbol gfs (4) Parameter Test Conditions Forward Transconductance VDS = 15 V, ID = 20 A Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V, f = 1 MHz, VGS = 0 td(on) tr td(off) tf Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time tf(Voff) tf tc Qg Qgs Qgd Min. Typ. Max. Unit 60 S 6400 1300 190 pF pF pF VDD = 20 V, ID = 50 A, RG= 4.7 Ω VGS = 4.5 V (see Figure 16) 37 270 90 80 ns ns ns ns Turn-off Delay Time Fall Time Cross-over Time Vclamp = 32 V, ID = 100 A, RG= 4.7 Ω VGS = 4.5 V (see Figure 17) 85 125 160 ns ns ns Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 32 V, ID = 100 A, VGS = 4.5 V (see Figure 19) 72 20 28.5 90 nC nC nC Typ. Table 7: Source Drain Diode Symbol Max. Unit Source-drain Current 100 A ISDM (1) Source-drain Current (pulsed) 400 A VSD (4) Forward On Voltage 1.3 V ISD trr Qrr IRRM Parameter Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Test Conditions Min. ISD = 160 A, VGS = 0 ISD = 100 A, di/dt = 100 A/µs, VDD = 20 V, Tj = 150°C (see Figure 16) 88 240 5.5 ns nC A (1) Pulse width limited by safe operating area (4). Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 3/12 STP200NF04L - STB200NF04L - STB200NF04L-1 Figure 3: Safe Operating Area Figure 6: Thermal Impedance Figure 4: Output Characteristics Figure 7: Transfer Characteristics Figure 5: Transconductance Figure 8: Static Drain-source On Resistance 4/12 STP200NF04L - STB200NF04L - STB200NF04L-1 Figure 9: Gate Charge vs Gate-source Voltage Figure 12: Capacitance Variations Figure 10: Normalized Gate Thereshold Voltage vs Temperature Figure 13: Normalized On Resistance vs Temperature Figure 11: Source-Drain Diode Forward Characteristics Figure 14: Normalized Breakdown Voltage vs Temperature 5/12 STP200NF04L - STB200NF04L - STB200NF04L-1 Figure 15: Unclamped Inductive Load Test Circuit Figure 18: Unclamped Inductive Wafeform Figure 16: Switching Times Test Circuit For Resistive Load Figure 19: Gate Charge Test Circuit Figure 17: Test Circuit For Inductive Load Switching and Diode Recovery Times 6/12 STP200NF04L - STB200NF04L - STB200NF04L-1 TO-220 MECHANICAL DATA DIM. mm. MIN. TYP inch MAX. MIN. A 4.40 4.60 0.173 TYP. MAX. 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 L 13 14 0.511 0.551 L1 3.50 3.93 0.137 0.154 L20 16.40 0.645 L30 28.90 1.137 øP 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 7/12 STP200NF04L - STB200NF04L - STB200NF04L-1 TO-262 (I2PAK) MECHANICAL DATA mm. inch DIM. MIN. 8/12 TYP MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 A1 2.40 2.72 0.094 0.107 b 0.61 0.88 0.024 0.034 b1 1.14 1.70 0.044 0.066 c 0.49 0.70 0.019 0.027 c2 1.23 1.32 0.048 0.052 D 8.95 9.35 0.352 0.368 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 E 10 10.40 0.393 0.410 L 13 14 0.511 0.551 L1 3.50 3.93 0.137 0.154 L2 1.27 1.40 0.050 0.055 STP200NF04L - STB200NF04L - STB200NF04L-1 D2PAK MECHANICAL DATA TO-247 MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 D1 E 8 10 E1 0.315 10.4 0.393 8.5 0.334 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.625 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 M 2.4 3.2 0.094 0.126 R 0º 0.015 4º 3 V2 0.4 1 9/12 STP200NF04L - STB200NF04L - STB200NF04L-1 D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 24.4 N 100 T TAPE MECHANICAL DATA DIM. mm MIN. MAX. MIN. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 MAX. 0.449 0.456 F 11.4 11.6 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 * on sales type 10/12 inch 0.933 0.956 inch MAX. MIN. MAX. 330 12.992 13.2 0.504 0.520 26.4 0.960 1.039 0.059 0795 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 STP200NF04L - STB200NF04L - STB200NF04L-1 Table 8: Revision History Date Revision 11/Apr/2005 1 Description of Changes First Release. 11/12 STP200NF04L - STB200NF04L - STB200NF04L-1 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners © 2005 STMicroelectronics - All Rights Reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 12/12