STP20NE06L

STP20NE06L STP20NE06LFP  N - CHANNEL 60V - 0.06 Ω - 20A TO-220/TO-220FP STripFET POWER MOSFET TYPE V DSS R DS( on ) ID STP20NE06L STP20NE06LF P 60 V 60 V < 0.07 Ω < 0.07 Ω 20 A 13 A ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.06 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 100 oC APPLICATION ORIENTED CHARACTERIZATION 3 1 DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique ” Single Feature Size ” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. 1 c u d TO-220 e t le ) s t( 3 2 2 TO-220FP o r P INTERNAL SCHEMATIC DIAGRAM o s b O - APPLICATIONS ■ DC MOTOR CONTROL ■ DC-DC & DC-AC CONVERTERS ■ SYNCHRONOUS RECTIFICATION ) s ( ct u d o ABSOLUTE MAXIMUM RATINGS r P e Symb ol t e l o V DS V DGR s b O V GS ID Parameter ID I DM (•) P tot Drain- gate Voltage (R GS = 20 kΩ) G ate-source Voltage o Unit ST P20NE06F P 60 V 60 V ± 20 V Drain Current (continuous) at Tc = 25 C 20 13 A o 14 9 A Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) 80 80 A T otal Dissipation at Tc = 25 oC 70 30 W 0.47 0.2 W /o C  2000 V V ISO Insulation W ithstand Voltage (DC) dv/dt Peak Diode Recovery voltage slope T s tg Storage T emperature Max. O perating Junct ion T emperature (•) Pulse width limited by safe operating area April 1999 STP20NE06 Drain-source Voltage (V GS = 0) Derating Factor Tj Value 7 V/ns -65 to 175 o C 175 o C ( 1) ISD ≤ 20 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX 1/9 STP20NE06L/FP THERMAL DATA R thj -case R thj -amb R thc-sink Tl Thermal Resistance Junction-case TO-220 TO-220FP 2.14 5 Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature F or Soldering Purpose 62.5 0.5 300 o C/W o C/W C/W o C o AVALANCHE CHARACTERISTICS Symbo l Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) 20 A E AS Single Pulse Avalanche Energy (starting Tj = 25 o C, ID = IAR , V DD = 35 V) 100 mJ Min. Typ. ) s t( 60 od ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbo l V (BR)DSS Parameter Test Con ditions Drain-source Breakdown Voltage I D = 250 µA I DSS V DS = Max Rating Zero Gate Voltage Drain Current (V GS = 0) V DS = Max Rating IGSS Gate-body Leakage Current (VDS = 0) Symbo l V GS(th) Parameter Static Drain-source On Resistance I D(o n) On State Drain Current DYNAMIC o r P e g f s (∗) s b O C iss C os s C rss (s) Gate Threshold Voltage V DS = V GS t e l o e t le o s b O - Test Con ditions R DS(on) Symbo l T c = 125 oC V GS = ± 20 V ON (∗) 2/9 V GS = 0 V GS = 5 V V GS = 10 V ct du Parameter ID = 250 µA Pr Min. Test Con ditions V DS > ID(o n) x R DS(on )ma x Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS = 25 V f = 1 MHz I D =10 A V GS = 0 V µA µA ± 100 nA Typ. Max. Unit 0.07 0.06 0.085 0.07 V 20 V DS > ID(o n) x R DS(on )ma x V GS = 10 V Unit 1 10 1 I D = 10 A ID = 10 A Forward Transconductance uc Max. Ω Ω A Min. Typ. Max. Unit 5 9 S 800 125 40 pF pF pF STP20NE06L/FP ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbo l Parameter Test Con ditions Min. Typ. Max. Unit t d(on) tr Turn-on Delay T ime Rise Time V DD = 30 V I D = 10 A R G =4.7 W VGS = 5 V (see test circuit, figure 3) 20 45 Qg Q gs Q gd Total G ate Charge Gate-Source Charge Gate-Drain Charge V DD = 48 V 14 8 4 20 nC nC nC Typ. Max. Unit I D = 20 A V GS = 5 V ns ns SWITCHING OFF Symbo l tr (Voff) tf tc Parameter Off-voltage Rise T ime Fall T ime Cross-over Time Test Con ditions Min. 10 25 42 V DD = 48 V I D = 20 A R G =4.7 Ω V GS = 5 V (see test circuit, figure 5) SOURCE DRAIN DIODE Symbo l ISD I SDM (•) V SD (∗) t rr Q rr I RRM Parameter Test Con ditions Min. Source-drain Current Source-drain Current (pulsed) I SD = 20 A I SD = 20 A di/dt = 100 A/µs o Tj = 150 C V DD = 30 V (see test circuit, figure 5) ) s ( ct (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area u d o r P e Safe Operating Area for TO-220 V GS = 0 e t le Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current o s b O - ns ns ns c u d Typ. ) s t( Max. Unit 20 80 A A o r P 1.5 V 65 ns 130 nC 4 A Safe Operating Area for TO-220FP t e l o s b O 3/9 STP20NE06L/FP Thermal Impedance for TO-220 Thermal Impedance forTO-220FP Output Characteristics Transfer Characteristics e t le ) s ( ct r P e u d o Transconductance t e l o s b O 4/9 c u d o r P o s b O - Static Drain-source On Resistance ) s t( STP20NE06L/FP Gate Charge vs Gate-source Voltage Normalized Gate Threshold Voltage vs Temperature Capacitance Variations Normalized On Resistance vs Temperature c u d e t le ) s ( ct ) s t( o r P o s b O - u d o r P e Source-drain Diode Forward Characteristics t e l o s b O 5/9 STP20NE06L/FP Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit c u d e t le ) s ( ct u d o r P e o s b O - Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times t e l o s b O 6/9 o r P ) s t( STP20NE06L/FP TO-220 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 D1 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 H2 10.0 10.40 0.393 14.0 0.511 L2 16.4 2.65 2.95 0.104 L6 15.25 15.75 0.600 L7 6.2 6.6 0.244 L9 3.5 3.93 0.137 DIA. 3.75 3.85 0.260 0.154 so 0.151 E 0.147 b O - 0.116 0.620 D1 C ) s ( ct e t le o r P 0.551 D A L5 u d o c u d 0.645 13.0 r P e F1 L2 t e l o G G1 s b O H2 L4 ) s t( 0.106 0.409 F2 F Dia. L5 L9 L7 L6 L4 P011C 7/9 STP20NE06L/FP TO-220FP MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 H 10 10.4 0.393 L2 30.6 1.126 L4 9.8 10.6 0.385 L6 15.9 16.4 0.626 L7 9 9.3 0.354 Ø 3 3.2 0.417 0.645 0.366 so 0.118 0.126 D E b O L3 L6 L7 ¯ G F2 H s b O 1.204 G1 t e l o o r P 0.409 F B r P e e t le F1 A ) s ( ct u d o c u d 0.630 28.6 ) s t( 0.106 16 L3 1 2 3 L2 8/9 MAX. L4 STP20NE06L/FP c u d e t le ) s ( ct ) s t( o r P o s b O - u d o r P e t e l o s b O Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibil ity for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specific ation mentioned in this publication are subjec t to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics  1999 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com . 9/9