STP210N75F6

STP210N75F6 N-channel 75 V, 3 mΩ, 120 A TO-220 STripFET™ VI DeepGATE™ Power MOSFET Features Order code VDSS RDS(on) max ID STP210N75F6 75 V < 3.7 mΩ 120 A ■ Low gate charge ■ Very low on-resistance ■ High avalanche ruggedness 3 1 2 TO-220 Application Switching applications Description This product is a 75 V N-channel STripFET™ VI Power MOSFET based on the ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. Figure 1. Internal schematic diagram $ ' 3 !-V Table 1. Device summary Order code Marking Package Packaging STP210N75F6 210N75F6 TO-220 Tube May 2011 Doc ID 018507 Rev 1 1/13 www.st.com 13 Contents STP210N75F6 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/13 .............................................. 8 Doc ID 018507 Rev 1 STP210N75F6 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit 75 V VDS Drain-source voltage (VGS = 0) VGS Gate-source voltage ± 20 V ID Drain current (continuous) at TC = 25 °C 120 A ID Drain current (continuous) at TC = 100 °C 120 A Drain current (pulsed) 480 A Total dissipation at TC = 25 °C 300 W 2 W/°C - 55 to 175 °C Value Unit Thermal resistance junction-case max 0.5 °C/W Rthj-a Thermal resistance junction-ambient max 62.5 °C/W Tl Maximum lead temperature for soldering purpose 300 °C IDM (1) PTOT Derating factor Tstg Tj Storage temperature Operating junction temperature 1. Current limited by package. Table 3. Symbol Rthj-case Thermal data Parameter Doc ID 018507 Rev 1 3/13 Electrical characteristics 2 STP210N75F6 Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 4. Symbol Parameter V(BR)DSS Drain-source Breakdown voltage Test conditions ID = 250 µA, VGS = 0 Min. Typ. Max. 75 Unit V VDS = max rating 1 µA VDS = max rating,TC=125 °C 100 µA Gate-body leakage current (VDS = 0) VGS = ± 20 V 100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 4 V RDS(on) Static drain-source on resistance VGS = 10 V, ID = 60 A 3.0 3.7 mΩ Typ. Max. Unit IDSS Zero gate voltage Drain current (VGS = 0) IGSS Table 5. Symbol 4/13 On/off states 2 Dynamic Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Test conditions Min. 11800 VDS = 25 V, f = 1 MHz, VGS = 0 VDD = 37.5 V, ID = 120 A, VGS = 10 V (see Figure 14) Doc ID 018507 Rev 1 - - 1060 pF - pF 394 pF 171 nC 50 36 - nC nC STP210N75F6 Electrical characteristics Table 6. Switching times Symbol Parameter td(on) tr Turn-on delay time Rise time td(off) tf Turn-off-delay time Fall time Table 7. Symbol ISD Test conditions VDD = 40 V, ID = 60 A RG = 4.7 Ω VGS = 10 V (see Figure 13) Min. Typ. Max. Unit - 34 70 - ns ns - 154 71 - ns ns Min. Typ. Source drain diode Parameter Test conditions Max Unit Source-drain current - 120 A ISDM (1) Source-drain current (pulsed) - 480 A VSD (2) Forward on voltage ISD = 120 A, VGS = 0 - 1.5 V Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 120 A, VDD = 60 V di/dt = 100 A/µs, Tj = 150 °C (see Figure 15) - trr Qrr IRRM 60 144 4.8 ns nC A 1. Current limited by package. 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Doc ID 018507 Rev 1 5/13 Electrical characteristics STP210N75F6 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance AM09029v1 ID (A) 280tok K s ai 100 δ=0.5 Tj=175°C Tc=25°C Single pulse e ar (on) his DS nt xR i on ma y ati er d b Op ite m i L 0.2 0.1 100µs 10 0.05 -1 10 0.02 1ms 1 Zth=k Rthj-c δ=tp/τ 0.01 10ms Single pulse tp τ -2 0.1 0.1 Figure 4. ID (A) 350 10 1 10 -5 10 VDS(V) Output characteristics Figure 5. AM09030v1 VGS=10V -4 -2 -3 10 10 10 -1 10 tp (s) Transfer characteristics AM09031v1 ID (A) 350 VDS=2V 300 300 5V 250 250 200 200 150 150 100 100 50 50 4V 0 0 Figure 6. 2 4 8 6 VDS(V) Normalized BVDSS vs temperature AM09032v1 BVDSS (norm) ID=250µA 0 0 Figure 7. 2 4 6 8 VGS(V) Static drain-source on resistance AM09033v1 RDS(on) (Ω) 3.8 1.15 VGS=10V 3.6 1.10 3.4 1.05 3.2 1.00 3.0 0.95 2.8 0.90 0.85 -75 6/13 2.6 2.4 -25 25 75 125 175 TJ(°C) Doc ID 018507 Rev 1 20 40 60 80 100 120 ID(A) STP210N75F6 Figure 8. Electrical characteristics Gate charge vs gate-source voltage Figure 9. AM09034v1 VGS (V) VDD=37.5V ID=120A 12 Capacitance variations AM09035v1 C (pF) 14000 12000 10 Ciss 10000 8 8000 6 6000 4 4000 2 2000 0 0 50 100 200 150 0 0 Qg(nC) Figure 10. Normalized gate threshold voltage vs temperature AM09036v1 VGS(th) Coss 10 20 30 40 50 60 Crss 70 VDS(V) Figure 11. Normalized on resistance vs temperature AM09037v1 RDS(on) (norm) (norm) ID=60A VGS=10V ID=250µA 1.2 2.2 1.0 1.7 0.8 1.2 0.6 0.7 0.4 0.2 -75 -25 25 75 TJ(°C) 175 125 0.2 -75 -25 25 75 125 175 TJ(°C) Figure 12. Source-drain diode forward characteristics AM09038v1 VSD (V) 1.0 TJ=-55°C 0.9 TJ=25°C 0.8 0.7 TJ=175°C 0.6 0.5 0.4 0 10 20 30 40 50 ISD(A) Doc ID 018507 Rev 1 7/13 Test circuits 3 STP210N75F6 Test circuits Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 17. Unclamped inductive waveform AM01471v1 Figure 18. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 8/13 0 10% Doc ID 018507 Rev 1 AM01473v1 STP210N75F6 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Doc ID 018507 Rev 1 9/13 Package mechanical data Table 8. STP210N75F6 TO-220 type A mechanical data mm Dim. Min. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 10/13 Typ. 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 ∅P 3.75 3.85 Q 2.65 2.95 Doc ID 018507 Rev 1 STP210N75F6 Package mechanical data Figure 19. TO-220 type A drawing 0015988_typeA_Rev_S Doc ID 018507 Rev 1 11/13 Revision history 5 STP210N75F6 Revision history Table 9. 12/13 Document revision history Date Revision 02-May-2011 1 Changes First release. Doc ID 018507 Rev 1 STP210N75F6 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. 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