STP220N6F7

STP220N6F7 N-channel 60 V, 0.0021 Ω typ., 120 A, STripFET™ F7 Power MOSFET in a TO-220 package Datasheet - production data Features     Order code VDS RDS(on)max ID PTOT STP220N6F7 60 V 0.0024 Ω 120 A 237 W Among the lowest RDS(on) on the market Excellent figure of merit (FoM) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness Applications  Figure 1: Internal schematic diagram Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Table 1: Device summary Order code Marking Package Packaging STP220N6F7 220N6F7 TO-220 Tube October 2015 DocID026547 Rev 3 This is information on a product in full production. 1/13 www.st.com Contents STP220N6F7 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package mechanical data ............................................................... 9 4.1 5 2/13 TO-220 package mechanical data .................................................. 10 Revision history ............................................................................ 12 DocID026547 Rev 3 STP220N6F7 1 Electrical ratings Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 60 V VGS Gate-source voltage ±20 V ID(1) Drain current (continuous) 120 A ID(1) Drain current (continuous) at TC = 100 °C 120 A IDM(2) Drain current (pulsed) TC = 25 °C 480 A PTOT Total dissipation at TC = 25 °C 237 W EAS(3) Single pulse avalanche energy 1 J TJ Operating junction temperature Tstg Storage temperature -55 to 175 °C °C Notes: (1)Current (2)Pulse limited by package width is limited by safe operating area (3)Starting Tj = 25°C, Id = 20 A, Vdd = 50 V Table 3: Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case max 0.63 °C/W Rthj-amb Thermal resistance junction-ambient max 62.5 °C/W DocID026547 Rev 3 3/13 Electrical characteristics 2 STP220N6F7 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 4: On /off states Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage VGS = 0, ID = 1 mA Min. Typ. Max. 60 Uni t V VGS = 0, VDS = 60 V 1 µA VGS = 0, VDS = 60 V, TC = 125 °C 100 µA 100 nA 4 V 0.002 1 0.002 4 Ω Min. Typ. Max. Uni t - 6400 - pF - 3880 - pF - 175 - pF - 100 - nC - 36 - nC - 24 - nC Min. Typ. Max . Unit - 33 - ns - 103 - ns - 54 - ns - 29 - ns IDSS Zero gate voltage drain current IGSS Gate-body leakage current VDS = 0, VGS = + 20 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source on- resistance VGS = 10 V, ID = 60 A 2 Table 5: Dynamic Symbol Parameter Test conditions Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge VGS = 0, VDS = 25 V, f = 1 MHz VDD = 30 V, ID = 120 A, VGS = 10 V (see Figure 14: "Test circuit for gate charge behavior") Table 6: Switching times Symbol td(on) tr td(off) tf 4/13 Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD = 30 V, ID = 60 A, RG = 4.7 Ω, VGS = 10 V (see Figure 13: "Test circuit for resistive load switching times") DocID026547 Rev 3 STP220N6F7 Electrical characteristics Table 7: Source drain diode Symbol VSD(1) Parameter Test conditions Min . Typ . Max . Un it - 1.1 V Forward on voltage VGS = 0, ISD = 120 A - ISD = 120 A, di/dt = 100 A/µs VDD = 48 V, TJ = 150 °C (see Figure 15: "Test circuit for inductive load switching and diode recovery times") - 69 ns - 104 nC - 3 A trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current Notes: (1)Pulsed: pulse duration = 300 µs, duty cycle 1.5% DocID026547 Rev 3 5/13 Electrical characteristics 2.1 STP220N6F7 Electrical characteristics (curves) Figure 2: Safe operating area Figure 3: Thermal impedance GIPG051120141133MT ID (A) δ ea ar is th R i n ax n io y m t ra d b pe O mite Li 100 is D on S( ) 0.2 0.05 0.1 10µs 0.02 0.01 100µs 10 1ms Tj=175°C Tc=25°C Single pulse 1 0.1 1 V DS(V) 10 Figure 4: Output characteristics Figure 5: Transfer characteristics GIPG051120141150MT ID(A) 400 ID (A) V GS=8, 9, 10V GIPG051120141159MT V DS=4V 350 350 300 300 7V 250 250 200 200 6V 150 150 100 100 50 50 5V 0 0 4 2 0 6 8 V DS(V) Figure 6: Gate charge vs gate-source voltage V DS=30V ID=120 A 12 4 8 6 V GS(V) Figure 7: Static drain-source on-resistance GIPG051120141204MT V GS (V) 2 0 GIPG051120141354MT R DS(on) (mΩ) V GS=10V 2.22 10 2.18 8 2.14 6 2.10 4 2.06 2 2.02 0 0 6/13 20 40 60 80 100 120 Q g(nC) DocID026547 Rev 3 0 20 40 60 80 100 120 ID(A) STP220N6F7 Electrical characteristics Figure 9: Normalized gate threshold voltage vs temperature Figure 8: Capacitance variations GIPG051120141219MT C (pF) GIPG051120141232MT V GS(th) (norm) ID=250µ A 1.10 10000 Ciss 1.00 Coss 0.90 1000 0.80 0.70 100 0.60 Crss 0.50 10 0.1 1 0.40 -75 V DS(V) 10 Figure 10: Normalized on-resistance vs temperature 25 125 175 T J(°C) GIPG051120141245MT V (BR)DSS (norm) V GS=10V Id=60 A 1.80 75 Figure 11: Normalized V(BR)DSS vs temperature GIPG051120141240MT R DS(on) (norm) -25 ID=1m A 1.04 1.60 1.02 1.40 1.20 1.00 1.00 0.98 0.80 0.60 -75 -25 25 75 125 175 0.96 -75 T J(°C) -25 25 75 125 175 T J(°C) Figure 12: Source-drain diode forward characteristics GIPG051120141326MT V SD(V) 1.00 T J=-55°C 0.90 T J=25°C 0.80 0.70 T J=175°C 0.60 0.50 10 30 50 70 DocID026547 Rev 3 90 110 ISD(A) 7/13 Test circuits 3 8/13 STP220N6F7 Test circuits Figure 13: Test circuit for resistive load switching times Figure 14: Test circuit for gate charge behavior Figure 15: Test circuit for inductive load switching and diode recovery times Figure 16: Unclamped inductive load test circuit Figure 17: Unclamped inductive waveform Figure 18: Switching time waveform DocID026547 Rev 3 STP220N6F7 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. DocID026547 Rev 3 9/13 Package mechanical data 4.1 STP220N6F7 TO-220 package mechanical data Figure 19: TO-220 type A package outline 10/13 DocID026547 Rev 3 STP220N6F7 Package mechanical data Table 8: TO-220 type A mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 øP 3.75 3.85 Q 2.65 2.95 DocID026547 Rev 3 11/13 Revision history 5 STP220N6F7 Revision history Table 9: Document revision history 12/13 Date Revision Changes 17-Jun-2014 1 Initial release. 05-Nov-2014 2 Updated title and features in cover page. Updated Electrical rating and Electrical characteristics. Added Electrical characteristics (curves) . Minor text changes. 07-Oct-2015 3 Document status promoted from preliminary to production data. DocID026547 Rev 3 STP220N6F7 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2015 STMicroelectronics – All rights reserved DocID026547 Rev 3 13/13