STP22NE03

STP22NE03L N - CHANNEL ENHANCEMENT MODE " SINGLE FEATURE SIZE™ " POWER MOSFET TYPE STP22NE03L s s s s s V DSS 30 V R DS(on) < 0.05 Ω ID 22 A TYPICAL RDS(on) = 0.034 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 100 oC APPLICATION ORIENTED CHARACTERIZATION 3 1 2 DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique "Single Feature Size™ " strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC & DC-AC CONVERTERS s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc. ) TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR V GS ID ID IDM ( • ) P tot dv/dt T stg Tj Parameter Drain-source Voltage (V GS = 0 ) Drain- gate Voltage (R GS = 2 0 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 2 5 C Drain Current (continuous) at T c = 1 00 C Drain Current (pulsed) Total Dissipation at T c = 2 5 o C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature o o Value 30 30 ± 15 22 16 88 60 0.4 6 -65 to 175 175 (1) ISD ≤22 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX Unit V V V A A A W W/ o C V/ns o o C C 1/5 (•) Pulse width limited by safe operating area January 1998 STP22NE03L THERMAL DATA R thj-case Rthj-amb R thc-sink Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose 2.5 62.5 0.5 300 C/W oC/W o C/W o C o AVALANCHE CHARACTERISTICS Symbol I AR E AS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j m ax, δ < 1 %) Single Pulse Avalanche Energy (starting T j = 2 5 o C, I D = I AR , VDD = 1 5 V) Max Value 22 TBD Unit A mJ ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol V (BR)DSS I DSS I GSS Parameter Drain-source Breakdown Voltage Test Conditions I D = 2 50 µ A VGS = 0 Min. 30 1 10 ± 1 00 Typ. Max. Unit V µA µA nA Zero Gate Voltage V DS = M ax Rating Drain Current (V GS = 0 ) V DS = M ax Rating Gate-body Leakage Current (V DS = 0 ) V GS = ± 1 5 V T c = 125 o C ON (∗) Symbol V GS(th) R DS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance V DS = VGS V GS = 1 0V V GS = 5 V Test Conditions ID = 2 50 µ A ID = 1 1 A ID = 11 A 22 Min. 1 Typ. 1.7 0.034 0.049 Max. 2.5 0.05 0.06 Unit V Ω ID(on) On State Drain Current V DS > I D(on) x R DS(on)max V GS = 1 0 V A DYNAMIC Symbol g fs ( ∗ ) C iss C oss C rss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions V DS > I D(on) x R DS(on)max V DS = 2 5 V f = 1 MHz I D = 11 A V GS = 0 Min. 7 Typ. 13 680 160 60 950 220 85 Max. Unit S pF pF pF 2/5 STP22NE03L ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol t d(on) tr Qg Q gs Q gd Parameter Turn-on Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions V DD = 1 5 V R G = 4.7 Ω V DD = 2 4 V ID = 11 A V GS = 5 V ID = 22 A VGS = 5 V Min. Typ. 15 70 13 6 6 Max. 20 100 18 Unit ns ns nC nC nC SWITCHING OFF Symbol t r(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions V DD = 2 4 V ID = 2 2 A R G = 4.7 Ω V GS = 5 V Min. Typ. 13 33 55 Max. 18 46 77 Unit ns ns ns SOURCE DRAIN DIODE Symbol I SD I SDM (• ) V SD ( ∗ ) t rr Q rr I RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 2 2 A I SD = 2 2 A V DD = 1 5 V VGS = 0 di/dt = 100 A/ µ s o T j = 1 50 C 40 44 2.2 Test Conditions Min. Typ. Max. 22 88 1.5 Unit A A V ns µC A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area 3/5 STP22NE03L TO-220 MECHANICAL DATA DIM. MIN. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA. 13.0 2.65 15.25 6.2 3.5 3.75 0.49 0.61 1.14 1.14 4.95 2.4 10.0 16.4 14.0 2.95 15.75 6.6 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 4.40 1.23 2.40 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 0.551 0.116 0.620 0.260 0.154 0.151 mm TYP. MAX. 4.60 1.32 2.72 MIN. 0.173 0.048 0.094 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 inch TYP. MAX. 0.181 0.051 0.107 A C D1 L2 F1 D G1 E Dia. L5 L7 L6 L4 P011C L9 4/5 F2 F G H2 STP22NE03L Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1998 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 5/5