N-CHANNEL 30V - 0.038Ω - 22A TO-220 STripFET™ POWER MOSFET
TYPE STP22NF03L
s s s s
STP22NF03L
VDSS 30V
RDS(on) ID(on) x RDS(on)max, VGS = 10V 22 Min. 1 0.038 0.045 0.05 0.06 A Typ. Max. Unit V Ω
DYNAMIC
Symbol gfs (1) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V, f = 1 MHz, VGS = 0 Test Conditions VDS > ID(on) x RDS(on)max, ID =11A Min. Typ. 7 330 90 40 Max. Unit S pF pF pF
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STP22NF03L
ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON
Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDD = 15V, ID = 11A RG = 4.7Ω VGS = 4.5V (see test circuit, Figure 3) VDD = 24V, ID = 22A, VGS = 10V Min. Typ. 11 100 6.5 3.6 2 9 Max. Unit ns ns nC nC nC
SWITCHING OFF
Symbol td(off) tf tr(off) tf tc Symbol ISD ISDM (1) VSD (2) trr Qrr IRRM Parameter Turn-off-Delay Time Fall Time Off-voltage Rise Time Fall Time Cross-over Time Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 22A, VGS = 0 ISD = 22A, di/dt = 100A/µs, VDD = 15V, Tj = 150°C (see test circuit, Figure 5) 30 18 1.2 Test Conditions Min. Vclamp =24V, ID =22A RG = 4.7Ω, VGS = 4.5V (see test circuit, Figure 5) Test Conditions VDD = 15V, ID = 11A, RG = 4.7Ω, VGS = 4.5V (see test circuit, Figure 3) Min. Typ. 25 22 22 55 75 Typ. Max. 22 88 1.5 Max. Unit ns ns ns ns ns Unit A A V ns nC A
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area.
Safe Operating Area
Thermal Impedence
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STP22NF03L
Output Characteristics Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
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STP22NF03L
Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
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STP22NF03L
Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuit For Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times
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STP22NF03L
TO-220 MECHANICAL DATA
DIM. MIN. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA. 13.0 2.65 15.25 6.2 3.5 3.75 0.49 0.61 1.14 1.14 4.95 2.4 10.0 16.4 14.0 2.95 15.75 6.6 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 4.40 1.23 2.40 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 0.551 0.116 0.620 0.260 0.154 0.151 mm TYP. MAX. 4.60 1.32 2.72 MIN. 0.173 0.048 0.094 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 inch TYP. MAX. 0.181 0.051 0.107
A
C
D1
L2
D
F1
G1
E
Dia. L5 L7 L6 L4
P011C
L9
F2
F
G
H2
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STP22NF03L
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2000 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com
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