STP22NF03L

N-CHANNEL 30V - 0.038Ω - 22A TO-220 STripFET™ POWER MOSFET TYPE STP22NF03L s s s s STP22NF03L VDSS 30V RDS(on) ID(on) x RDS(on)max, VGS = 10V 22 Min. 1 0.038 0.045 0.05 0.06 A Typ. Max. Unit V Ω DYNAMIC Symbol gfs (1) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V, f = 1 MHz, VGS = 0 Test Conditions VDS > ID(on) x RDS(on)max, ID =11A Min. Typ. 7 330 90 40 Max. Unit S pF pF pF 2/8 STP22NF03L ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDD = 15V, ID = 11A RG = 4.7Ω VGS = 4.5V (see test circuit, Figure 3) VDD = 24V, ID = 22A, VGS = 10V Min. Typ. 11 100 6.5 3.6 2 9 Max. Unit ns ns nC nC nC SWITCHING OFF Symbol td(off) tf tr(off) tf tc Symbol ISD ISDM (1) VSD (2) trr Qrr IRRM Parameter Turn-off-Delay Time Fall Time Off-voltage Rise Time Fall Time Cross-over Time Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 22A, VGS = 0 ISD = 22A, di/dt = 100A/µs, VDD = 15V, Tj = 150°C (see test circuit, Figure 5) 30 18 1.2 Test Conditions Min. Vclamp =24V, ID =22A RG = 4.7Ω, VGS = 4.5V (see test circuit, Figure 5) Test Conditions VDD = 15V, ID = 11A, RG = 4.7Ω, VGS = 4.5V (see test circuit, Figure 3) Min. Typ. 25 22 22 55 75 Typ. Max. 22 88 1.5 Max. Unit ns ns ns ns ns Unit A A V ns nC A SOURCE DRAIN DIODE Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Safe Operating Area Thermal Impedence 3/8 STP22NF03L Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/8 STP22NF03L Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics 5/8 STP22NF03L Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 STP22NF03L TO-220 MECHANICAL DATA DIM. MIN. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA. 13.0 2.65 15.25 6.2 3.5 3.75 0.49 0.61 1.14 1.14 4.95 2.4 10.0 16.4 14.0 2.95 15.75 6.6 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 4.40 1.23 2.40 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 0.551 0.116 0.620 0.260 0.154 0.151 mm TYP. MAX. 4.60 1.32 2.72 MIN. 0.173 0.048 0.094 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 inch TYP. MAX. 0.181 0.051 0.107 A C D1 L2 D F1 G1 E Dia. L5 L7 L6 L4 P011C L9 F2 F G H2 7/8 STP22NF03L Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2000 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 8/8