STB23NM60N-STF23NM60N
STI23NM60N-STP23NM60N-STW23NM60N
N-channel 600 V - 0.150 Ω - 19 A - D2PAK - I2PAK - TO-220/FP
TO-247, second generation MDmesh™ Power MOSFET
Features
VDSS
(@Tjmax)
Type
RDS(on)
max
ID
STB23NM60N
19 A
STI23NM60N
19 A
3
12
I²PAK
19 A
STW23NM60N
19 A
r
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3
1
2
let
TO-220
■
100% avalanche tested
■
Low input capacitance and gate charge
■
Low gate input resistance
o
s
b
-O
Figure 1.
)
s
(
ct
Switching applications
3
TO-247
1. Limited only by maximum temperature allowed
■
u
d
o
2
1
STP23NM60N
Application
)
s
(
ct
D²PAK
19 A (1)
0.180 Ω
650 V
STF23NM60N
3
1
3
1
2
TO-220FP
Internal schematic diagram
u
d
o
Description
r
P
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This series of devices is designed using the
second generation of MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
t
e
l
o
s
b
O
Table 1.
Device summary
Order codes
Marking
Package
Packaging
STB23NM60N
23NM60N
D²PAK
Tape and reel
STI23NM60N
23NM60N
I²PAK
Tube
STF23NM60N
23NM60N
TO-220FP
Tube
STP23NM60N
23NM60N
TO-220
Tube
STW23NM60N
23NM60N
TO-247
Tube
March 2008
Rev 3
1/19
www.st.com
19
Contents
STB23NM60N-STF/I23NM60N-STP23NM60N-STW23NM60N
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................ 6
3
Test circuit
................................................ 9
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
6
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
)
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2/19
s
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STB23NM60N-STF/I23NM60N-STP23NM60N-STW23NM60N
1
Electrical ratings
Electrical ratings
Table 2.
Absolute maximum ratings
Value
Symbol
Parameter
D²PAK/I²PAK
TO-220FP
TO-220/TO-247
Unit
VDS
Drain-source voltage (VGS=0)
600
V
VGS
Gate-source voltage
± 25
V
ID
Drain current (continuous) at TC = 25 °C
19
19 (1)
ID
Drain current (continuous) at TC = 100 °C
11.7
11.7 (1)
IDM (2)
Drain current (pulsed)
PTOT
Total dissipation at TC = 25 °C
dv/dt (3)
e
t
e
ol
Peak diode recovery voltage slope
VISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t = 1 s; TC = 25 °C)
Tstg
Storage temperature
Tj
)-
Pr
150
s
b
O
Max. operating junction temperature
A
ct
A
76 (1)
A
35
W
u
d
o
76
(s)
15
V/ns
--
2500
V
-55 to 150
°C
150
°C
s
(
t
c
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
u
d
o
3. ISD ≤ 19 A, di/dt ≤400 A/µs, VDD =80% V(BR)DSS
r
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Table 3.
t
e
l
o
Symbol
s
b
O
Thermal data
Parameter
Rthj-case
Thermal resistance
junction-case max
Rthj-amb
Thermal resistance
junction-amb max
Rthj-pcb
Thermal resistance
junction-pcb max
Tl
Maximum lead
temperature for
soldering purposes
TO-220
I²PAK
TO-247
D²PAK
0.83
62.5
--
--
TO-220FP
Unit
3.6
°C/W
50
--
62.5
°C/W
--
30
--
°C/W
300
°C
3/19
Electrical ratings
Table 4.
STB23NM60N-STF/I23NM60N-STP23NM60N-STW23NM60N
Avalanche characteristics
Symbol
Parameter
IAS
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
EAS
Single pulse avalanche energy
(starting Tj= 25 °C, ID = IAS, VDD = 50 V)
Max value
Unit
9
A
700
mJ
)
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4/19
s
b
O
STB23NM60N-STF/I23NM60N-STP23NM60N-STW23NM60N
2
Electrical characteristics
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 5.
On/off states
Symbol
V(BR)DSS
dv/dt(1)
1.
Parameter
Drain-source breakdown
voltage
Drain-source voltage slope
VGS(th)
Gate threshold voltage
VDS= VGS, ID = 250 µA
RDS(on)
Static drain-source on
resistance
VGS= 10 V, ID= 9.5 A
VDS = Max rating,@125 °C
ct
gfs(1)
Forward transconductance
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
u
d
o
Pr
2
Unit
V
3
V/ns
)
s
(
ct
u
d
o
r
P
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t
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l
o
1
100
µA
µA
100
nA
4
V
Ω
0.150 0.180
s
b
O
Characteristic value at turn off on inductive load
)
(s
Max.
VDS = Max rating,
VGS = ±20 V
Parameter
Typ.
30
VGS = 10 V
Gate body leakage current
(VDS = 0)
e
t
e
ol
Test conditions
VDS =15 V, ID= 9.5 A
VDS = 50 V, f =1 MHz,
VGS = 0
Min.
Typ.
Max.
Unit
17
S
2050
140
8
pF
pF
pF
Equivalent output
capacitance
VGS = 0, VDS = 0 to 480 V
260
pF
Rg
Gate input resistance
f=1 MHz Gate DC Bias=0
Test signal level=20 mV
open drain
4
Ω
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
60
10
30
nC
nC
nC
Coss eq.(2)
1.
VDD = 480 V, ID = 19 A,
IGSS
Dynamic
Min.
600
Zero gate voltage drain
current (VGS = 0)
Symbol
O
ID = 1 mA, VGS= 0
IDSS
Table 6.
bs
Test conditions
VDD = 480 V, ID = 19 A
VGS = 10 V
(see Figure 19)
Pulsed: pulse duration = 300 µs, duty cycle 1.5%
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
5/19
Electrical characteristics
Table 7.
STB23NM60N-STF/I23NM60N-STP23NM60N-STW23NM60N
Switching times
Symbol
td(on)
tr
td(off)
tf
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Table 8.
Test conditions
RG = 4.7 Ω, VGS = 10 V
(see Figure 18)
Parameter
Test conditions
VSD(2)
Forward on voltage
ISD = 19 A, VGS=0
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD =19 A, di/dt =100 A/µs,
VDD = 100 V
(see Figure 20)
Reverse recovery time
Reverse recovery charge
Reverse recovery current
VDD = 100 V
di/dt =100 A/µs, ISD = 19 A
Tj = 150 °C (see Figure 20)
trr
Qrr
IRRM
1. Pulse width limited by safe operating area
)
(s
t
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u
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s
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2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
6/19
Min.
Source-drain current
Source-drain current (pulsed)
IRRM
Max. Unit
25
15
90
36
VDD = 300 V, ID = 9.5 A,
ISD
ISDM(1)
trr
Qrr
Typ.
ns
ns
ns
ns
Source drain diode
Symbol
s
b
O
Min.
Typ. Max. Unit
)
s
(
ct
Pr
u
d
o
19
76
A
A
1.3
V
470
7
29
ns
µC
A
600
9
29
ns
µC
A
STB23NM60N-STF/I23NM60N-STP23NM60N-STW23NM60N
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area for TO-220 D2PAK - I2PAK
Figure 3.
Electrical characteristics
Thermal impedance for TO-220 D2PAK - I2PAK
)
s
(
ct
u
d
o
Figure 4.
Safe operating area for TO-220FP
)
(s
Figure 5.
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Thermal impedance for TO-220FP
t
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s
b
O
t
c
u
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r
t
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P
e
Figure 6.
Safe operating area for TO-247
Figure 7.
Thermal impedance for TO-247
s
b
O
7/19
Electrical characteristics
Figure 8.
STB23NM60N-STF/I23NM60N-STP23NM60N-STW23NM60N
Output characteristics
Figure 9.
Transfer characteristics
)
s
(
ct
u
d
o
Figure 10. Transconductance
Figure 11. Static drain-source on resistance
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t
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)
(s
s
b
O
t
c
u
d
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r
P
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Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations
t
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s
b
O
8/19
STB23NM60N-STF/I23NM60N-STP23NM60N-STW23NM60N
Figure 14. Normalized gate threshold voltage
vs temperature
Figure 16. Source-drain diode forward
characteristics
Electrical characteristics
Figure 15. Normalized on resistance vs
temperature
)
s
(
ct
u
d
o
Figure 17. Normalized BVDSS vs temperature
r
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(s
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9/19
Test circuit
3
STB23NM60N-STF/I23NM60N-STP23NM60N-STW23NM60N
Test circuit
Figure 18. Switching times test circuit for
resistive load
Figure 19. Gate charge test circuit
)
s
(
ct
u
d
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r
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Figure 20. Test circuit for inductive load
Figure 21. Unclamped inductive load test
switching and diode recovery times
circuit
t
e
l
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)
(s
s
b
O
t
c
u
d
o
r
P
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t
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l
o
Figure 22. Unclamped inductive waveform
s
b
O
10/19
Figure 23. Switching time waveform
STB23NM60N-STF/I23NM60N-STP23NM60N-STW23NM60N
4
Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
)
s
(
ct
u
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t
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t
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s
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11/19
Package mechanical data
STB23NM60N-STF/I23NM60N-STP23NM60N-STW23NM60N
TO-220 mechanical data
mm
inch
Dim
Min
A
b
b1
c
D
D1
E
e
e1
F
H1
J1
L
L1
L20
L30
∅P
Q
3.75
2.65
d
o
r
s
b
O
12/19
Min
4.60
0.88
1.70
0.70
15.75
0.173
0.024
0.044
0.019
0.6
10.40
2.70
5.15
1.32
6.60
2.72
14
3.93
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
Typ
Max
0.181
0.034
0.066
0.027
0.62
0.050
16.40
28.90
t
c
u
t
e
l
o
Max
1.27
10
2.40
4.95
1.23
6.20
2.40
13
3.50
)
(s
P
e
Typ
4.40
0.61
1.14
0.48
15.25
s
b
O
t
e
l
o
r
P
e
3.85
2.95
u
d
o
0.147
0.104
)
s
(
ct
0.409
0.106
0.202
0.051
0.256
0.107
0.551
0.154
0.645
1.137
0.151
0.116
STB23NM60N-STF/I23NM60N-STP23NM60N-STW23NM60N
Package mechanical data
TO-220FP mechanical data
mm.
DIM.
Min.
A
4.4
inch
Typ.
Max.
Min.
Typ.
4.6
0.173
0.181
Max.
0.106
B
2.5
2.7
0.098
D
2.5
2.75
0.098
0.108
E
0.45
0.7
0.017
0.027
F
0.75
1
0.030
F1
1.15
1.7
0.045
F2
1.15
1.7
0.045
G
4.95
5.2
0.195
G1
2.4
2.7
0.094
H
10
10.4
0.393
1.126
1.204
.0385
0.417
L2
28.6
30.6
L4
9.8
10.6
L5
2.9
3.6
L6
15.9
L7
9
Ø
3
9.3
)
(s
3.2
A
u
d
o
0.106
0.409
0.630
0.114
0.141
0.626
0.645
0.354
0.366
0.118
0.126
E
t
c
u
0.067
0.204
t
e
l
o
s
b
O
16.4
0.067
r
P
e
16
L3
)
s
(
ct
0.039
B
D
d
o
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let
L6
G
G1
F
F1
L7
F2
H
O
o
s
b
L3
L2
L5
1 23
L4
13/19
Package mechanical data
STB23NM60N-STF/I23NM60N-STP23NM60N-STW23NM60N
TO-262 (I2PAK) mechanical data
mm.
inch
DIM.
Min.
Typ.
Max.
4.40
4.60
0.173
0.181
2.40
2.72
0.094
0.107
b
0.61
0.88
0.024
0.034
b1
1.14
1.70
0.044
0.066
c
0.49
0.70
0.019
c2
1.23
1.32
0.048
D
8.95
9.35
0.352
e
2.40
2.70
0.094
e1
4.95
5.15
0.194
E
10
10.40
0.393
L
13
14
L1
3.50
3.93
L2
1.27
1.40
d
o
r
P
e
14/19
Typ.
A
e
t
e
l
so
t
c
u
s
b
O
Min.
A1
)
(s
t
e
l
o
Max.
b
O
0.511
)
s
(
ct
0.027
0.052
Pr
u
d
o
0.368
0.106
0.202
0.410
0.551
0.137
0.154
0.050
0.055
STB23NM60N-STF/I23NM60N-STP23NM60N-STW23NM60N
Package mechanical data
D²PAK (TO-263) mechanical data
mm
inch
Dim
Min
A
A1
b
b2
c
c2
D
D1
E
E1
e
e1
H
J1
L
L1
L2
R
V2
Typ
4.40
0.03
0.70
1.14
0.45
1.23
8.95
7.50
10
8.50
Max
Min
4.60
0.23
0.93
1.70
0.60
1.36
9.35
0.173
0.001
0.027
0.045
0.017
0.048
0.352
0.295
0.394
0.334
10.40
Typ
u
d
o
0.1
5.28
15.85
2.69
2.79
1.40
1.75
r
P
e
t
e
l
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bs
0.4
0°
8°
0.192
0.590
0.099
0.090
0.05
0.051
)
s
(
ct
0.409
2.54
4.88
15
2.49
2.29
1.27
1.30
Max
0.181
0.009
0.037
0.067
0.024
0.053
0.368
0.208
0.624
0.106
0.110
0.055
0.069
0.016
0°
8°
O
)
s
(
t
c
u
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t
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s
b
O
0079457_M
15/19
Package mechanical data
STB23NM60N-STF/I23NM60N-STP23NM60N-STW23NM60N
TO-247 Mechanical data
mm.
Dim.
A
Min.
4.85
A1
2.20
Typ
2.60
b
1.0
1.40
b1
2.0
2.40
b2
3.0
3.40
c
0.40
0.80
D
19.85
E
15.45
)
s
(
ct
5.45
L
14.20
L1
3.70
e
t
e
l
o
s
b
L2
øP
3.55
øR
4.50
O
)
s
(
t
c
u
d
o
r
P
e
16/19
o
r
P
15.75
14.80
4.30
18.50
S
s
b
O
du
20.15
e
t
e
l
o
Max.
5.15
5.50
3.65
5.50
STB23NM60N-STF/I23NM60N-STP23NM60N-STW23NM60N
5
Packaging mechanical data
Packaging mechanical data
D2PAK FOOTPRINT
)
s
(
ct
u
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TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
t
e
l
o
DIM.
)
(s
t
c
u
d
o
r
TAPE MECHANICAL DATA
P
e
let
DIM.
MIN.
MAX.
inch
MIN.
A
B
1.5
C
12.8
D
20.2
G
24.4
N
100
T
MAX.
inch
MIN.
MAX.
330
12.992
13.2
0.504 0.520
0.059
0795
26.4
0.960 1.039
3.937
30.4
1.197
BASE QTY
BULK QTY
1000
1000
MAX.
A0
10.5
10.7
0.413 0.421
B0
15.7
15.9
0.618 0.626
D
1.5
1.6
0.059 0.063
D1
1.59
1.61
0.062 0.063
E
1.65
1.85
0.065 0.073
F
11.4
11.6
0.449 0.456
o
s
b
O
mm
s
b
O
mm
MIN.
K0
4.8
5.0
0.189 0.197
P0
3.9
4.1
0.153 0.161
P1
11.9
12.1
0.468 0.476
P2
1.9
2.1
R
50
0.075 0.082
1.574
T
0.25
0.35 0.0098 0.0137
W
23.7
24.3
0.933 0.956
* on sales type
17/19
Revision history
6
STB23NM60N-STF/I23NM60N-STP23NM60N-STW23NM60N
Revision history
Table 9.
Document revision history
Date
Revision
Changes
18-Sep-2007
1
First release
14-Dec-2007
2
Modified value on Table 2: Absolute maximum ratings
04-Feb-2008
3
Updated Table 3: Thermal data on page 3
)
s
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18/19
s
b
O
STB23NM60N-STF/I23NM60N-STP23NM60N-STW23NM60N
)
s
(
ct
Please Read Carefully:
u
d
o
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
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