STP25N60M2-EP

STP25N60M2-EP N-channel 600 V, 0.175 Ω typ., 18 A MDmesh™ M2 EP Power MOSFET in a TO-220 package Datasheet - production data Features Order code VDS @ TJmax RDS(on) max. ID STP25N60M2-EP 650 V 0.188 Ω 18 A • • • • • Extremely low gate charge Excellent output capacitance (COSS) profile Very low turn-off switching losses 100% avalanche tested Zener-protected Applications • • Figure 1: Internal schematic diagram Switching applications Tailored for Very High Frequency Converters (f > 150 kHz) Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 EP enhanced performance technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance, optimized switching characteristics with very low turn-off switching losses, rendering it suitable for the most demanding very high frequency converters. Table 1: Device summary Order code Marking Package Packaging STP25N60M2-EP 25N60M2EP TO-220 Tube January 2015 DocID027222 Rev 2 This is information on a product in full production. 1/14 www.st.com Contents STP25N60M2-EP Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.2 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 9 4 Package mechanical data ............................................................. 10 4.1 5 2/14 TO-220 type A package information................................................ 11 Revision history ............................................................................ 13 DocID027222 Rev 2 STP25N60M2-EP 1 Electrical ratings Electrical ratings Table 2: Absolute maximum ratings Symbol VGS Parameter Gate-source voltage Value Unit ± 25 V ID Drain current (continuous) at TC = 25 °C 18 A ID Drain current (continuous) at TC = 100 °C 11.3 A (1) IDM Drain current (pulsed) 72 A PTOT Total dissipation at TC = 25 °C 150 W dv/dt (2) Peak diode recovery voltage slope 15 V/ns dv/dt (3) MOSFET dv/dt ruggedness 50 V/ns - 55 to 150 °C Value Unit Tstg Tj Storage temperature Max. operating junction temperature Notes: (1) Pulse width limited by safe operating area. (2) ISD ≤ 18 A, di/dt ≤ 400 A/µs; VDS peak < V(BR)DSS, VDD = 400 V. (3) VDS ≤ 480 V Table 3: Thermal data Symbol Parameter Rthj-case Thermal resistance junction-case max 0.83 °C/W Rthj-amb Thermal resistance junction-ambient max 62.5 °C/W Value Unit Table 4: Avalanche characteristics Symbol Parameter IAR Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax) 3.5 A EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR; VDD = 50 V) 200 mJ DocID027222 Rev 2 3/14 Electrical characteristics 2 STP25N60M2-EP Electrical characteristics (TC = 25 °C unless otherwise specified) Table 5: On/off states Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage VGS = 0 V, ID = 1 mA Min. Typ. Max. 600 Unit V VGS = 0 V, VDS = 600 V 1 µA VGS = 0 V, VDS = 600 V, TC = 125 °C 100 µA ±10 µA 3 4 V 0.175 0.188 Ω Min. Typ. Max. Unit - 1090 - pF - 56 - pF - 1.6 - pF IDSS Zero gate voltage Drain current IGSS Gate-body leakage current VDS = 0 V, VGS = ±25 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source onresistance VGS = 10 V, ID = 9 A 2 Table 6: Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Test conditions VDS= 100 V, f = 1 MHz, VGS = 0 V Equivalent output capacitance VDS = 0 to 480 V, VGS = 0 V - 255 - pF RG Intrinsic gate resistance f = 1 MHz, ID = 0 A - 7 - Ω Qg Total gate charge - 29 - nC Qgs Gate-source charge - 6 - nC Qgd Gate-drain charge - 12 - nC Coss eq. (1) VDD = 480 V, ID = 18 A, VGS = 10 V (see Figure 16: "Gate charge test circuit") Notes: (1) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS Table 7: Switching Energy 4/14 Symbol Parameter Test conditions E(off) Turn-off energy (from 90% VGS to 0% ID) Min. Typ. Max. Unit VDD = 400 V, ID = 2 A RG = 4.7 Ω, VGS = 10 V - 7 - µJ VDD = 400 V, ID = 4 A RG = 4.7 Ω, VGS = 10 V - 8 - µJ DocID027222 Rev 2 STP25N60M2-EP Electrical characteristics Table 8: Switching times Symbol td(on) tr Parameter Turn-on delay time Rise time td(off) tf Turn-off-delay time Fall time Test conditions Min. Typ. Max. Unit VDD = 300 V, ID = 9 A RG = 4.7 Ω, VGS = 10 V (see Figure 15: "Switching times test circuit for resistive load" and Figure 20: "Switching time waveform") - 15 - ns - 10 - ns - 61 - ns - 16 - ns Min. Typ. Max. Unit Table 9: Source drain diode Symbol ISD Test conditions Source-drain current - 18 A (1) Source-drain current (pulsed) - 72 A (2) Forward on voltage - 1.6 V ISDM VSD Parameter VGS = 0 V, ISD = 18 A trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current ISD = 18 A, di/dt = 100 A/µs, VDD = 100 V (see Figure 17: " Test circuit for inductive load switching and diode recovery times") ISD = 18 A, di/dt = 100 A/µs, VDD = 100 V, Tj = 150 °C (see Figure 17: " Test circuit for inductive load switching and diode recovery times") - 360 ns - 5 µC - 28 A - 445 ns - 6.5 µC - 29 A Notes: (1) (2) Pulse width is limited by safe operating area Pulsed: pulse duration = 300 µs, duty cycle 1.5% DocID027222 Rev 2 5/14 Electrical characteristics 2.2 STP25N60M2-EP Electrical characteristics (curves) Figure 2: Safe operating area ID (A) Figure 3: Thermal impedance GC20510 GIPG011220141441ALS K 10 n) 0.2 DS (o O is per lim ati ite on d by in th m is a ax r R ea δ = 0.5 10µs 100µs 1ms 0.1 10-1 0.05 Zth = k RthJ-c δ = tp / Ƭ 0.02 1 10ms 0.01 SINGLE PULSE Tj=150°C TC=25°C Single pulse 0.1 0.1 10 1 tp VDS(V) 100 10-2 10-5 Figure 4: Output characteristics ID(A) 10-4 10-2 tp(s) 10-1 Figure 5: Transfer characteristics ID(A) GIPG011220141438ALS 40 GIPG281120141611ALS 40 35 10-3 Ƭ VGS = 6,7,8,9,10 V VDS = 16 V 35 30 30 VGS = 5 V 25 25 20 20 15 15 10 VGS = 4 V 5 0 0 8 4 16 12 10 Figure 6: Gate charge vs gate-source voltage VGS (V) 12 5 VDS(V) GIPG011220140958ALS 0 0 4 2 6 8 VGS(V) Figure 7: Static drain-source on-resistance VDS (V) 600 RDS(on) (Ω) GIPG011220141210ALS 0.186 VDS 10 500 VDD = 480 V 0.183 8 400 6 300 4 200 2 100 VGS = 10 V 0.180 0.177 0.174 0 0 5 10 15 20 25 0 30 Qg(nC) 0.171 0.168 0 6/14 DocID027222 Rev 2 4 8 12 16 ID(A) STP25N60M2-EP Electrical characteristics Figure 8: Capacitance variations Figure 9: Output capacitance stored energy C (pF) GIPG181120141549ALS 1000 CISS EOSS (μJ) GIPG181120141603ALS 8 6 100 4 COSS 10 2 CRSS 1 1 0.1 100 10 Figure 10: Turn-off switching loss vs drain current EOSS (μJ) 0 0 VDS(V) GIPG261120141106ALS 100 200 300 400 500 600 VDS(V) Figure 11: Normalized gate threshold voltage vs temperature VGS(th) (norm) 12 GIPG181120141615ALS 1.1 ID = 250 µA 1.0 10 0.9 8 0.8 6 0.7 4 0.6 -75 0 2 1 3 4 5 6 Figure 12: Normalized on-resistance vs temperature RDS(on) (norm) -25 25 75 GIPG181120141628ALS TJ(°C) Figure 13: Source-drain diode forward characteristics VSD (V) GIPG191120141427ALS TJ=-50°C 1.1 2.2 1.8 125 ID(A) 1.0 VGS = 10 V 0.9 1.4 TJ=-50°C 0.8 1.0 TJ=-50°C 0.7 0.6 0.6 0.2 -75 -25 25 75 125 TJ(°C) 0 0 DocID027222 Rev 2 4 8 12 16 ISD(A) 7/14 Electrical characteristics STP25N60M2-EP Figure 14: Normalized V(BR)DSS vs temperature V(BR)DSS GIPG191120141457ALS (norm) 1.08 1.04 1.00 ID = 1mA 0.96 0.92 0.88 -75 8/14 -25 25 75 125 TJ(°C) DocID027222 Rev 2 STP25N60M2-EP 3 Test circuits Test circuits Figure 15: Switching times test circuit for resistive load Figure 16: Gate charge test circuit VDD 47 k Ω 12 V 1 kΩ 100 nF I G = CONST Vi ≤ V GS 100 Ω D.U.T. 2.7 k Ω 2200 μ F VG 47 k Ω PW 1 kΩ AM01469v 1 Figure 17: Test circuit for inductive load switching and diode recovery times Figure 18: Unclamped inductive load test circuit Figure 19: Unclamped inductive waveform Figure 20: Switching time waveform t on V(BR)DSS t d(on) VD toff tr t d(off) tf 90% 90% I DM 10% ID VDD 10% 0 VDD VGS AM01472v 1 DocID027222 Rev 2 0 10% VDS 90% AM01473v 1 9/14 Package mechanical data 4 STP25N60M2-EP Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ® ECOPACK is an ST trademark. 10/14 DocID027222 Rev 2 STP25N60M2-EP 4.1 Package mechanical data TO-220 type A package information Figure 21: TO-220 type A package outline DocID027222 Rev 2 11/14 Package mechanical data STP25N60M2-EP Table 10: TO-220 type A mechanical data mm Dim. Min. Max. 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 12/14 Typ. A 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 øP 3.75 3.85 Q 2.65 2.95 DocID027222 Rev 2 STP25N60M2-EP 5 Revision history Revision history Table 11: Document revision history Date Revision Changes 01-Dec-2014 1 First release. 12-Jan-2015 2 Updated product status from “preliminary data” to “production data”. 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All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2015 STMicroelectronics – All rights reserved 14/14 DocID027222 Rev 2