STP25NM50N

STP25NM50N - STF25NM50N STB25NM50N/-1 - STW25NM50N N-CHANNEL 500V 0.11 Ω - 22 A TO-220/FP/D²/I²PAK/TO-247 SECOND GENERATION MDmesh™ MOSFET Table 1: General Features TYPE STB25NM50N-1 STF25NM50N STP25NM50N STW25NM50N STB25NM50N ■ ■ ■ Figure 1: Package ID 22 A 22 A(*) 22 A 22 A 22 A RDS(on) 0.140 0.140 0.140 0.140 0.140 Ω Ω Ω Ω Ω VDSS (@TjMAX) 550V 550V 550V 550V 550V 3 1 2 3 12 TO-220 3 1 I²PAK ■ HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE TO-247 D²PAK 3 2 1 3 1 2 DESCRIPTION The STx25NM50N is realized with the second generation of MDmesh Technology. This revolutionary MOSFET associates a new vertical structure to the Company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters TO-220FP Figure 2: Internal Schematic Diagram APPLICATIONS The MDmesh™ II family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies. Table 2: Order Codes SALES TYPE STP25NM50N STF25NM50N STB25NM50N-1 STW25NM50N STB25NM50N MARKING P25NM50N F25NM50N B25NM50N W25NM50N B25NM50N PACKAGE TO-220 TO-220FP I²PAK TO-247 D²PAK PACKAGING TUBE TUBE TUBE TUBE TAPE & REEL Rev. 9 October 2005 1/16 STP25NM50N - STF25NM50N - STB25NM50N/-1 - STW25NM50N Table 3: Absolute Maximum ratings Symbol Parameter Value TO-220/D²PAK/I²PAK/ TO-247 VDS VDGR VGS ID ID IDM ( ) PTOT dv/dt(1) Tstg Tj Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature 22 14 88 160 1.28 15 –55 to 150 150 500 500 ±25 22(*) 14 (*) 88 (*) 40 0.32 TO-220FP V V V A A A W W/°C V/ns °C °C Unit ( ) Pulse width limited by safe operating area (1) ISD ≤ 22 A, di/dt ≤ 400 A/µs, VDD =80% V(BR)DSS. (*) Limited only by maximum temperature allowed Table 4: Thermal Data TO-220/D²PAK/I²PAK/ TO-247 Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 0.78 62.5 300 TO-220FP 3.1 °C/W °C/W °C Table 5: Avalanche Characteristics Symbol IAS EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAS, VDD = 50 V) Max Value 10 350 Unit A mJ 2/16 STB25NM50N/-1 - STW25NM50N - STP25NM50N - STF25NM50N ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) Table 6: On/Off Symbol V(BR)DSS dv/dt(2) IDSS Parameter Drain-source Breakdown Voltage Drain Source Voltage Slope Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Gate Threshold Voltage Static Drain-source On Resistance Test Conditions Min. ID = 1mA, VGS = 0 Vdd=400V, Id=25A, Vgs=10V VDS = Max Rating VDS = Max Rating, TC = 125 °C VGS = ± 20V VDS = VGS, ID = 250 µA VGS = 10V, ID = 11 A 2 3 0.110 500 44 Value Typ. Max. V V/ns Unit 1 10 100 4 0.140 µA µA nA V Ω IGSS VGS(th) RDS(on) (2) Characteristic value at turn off on inductive load Table 7: Dynamic Symbol gfs (1) Ciss Coss Crss Coss eq. (*) td(on) tr td(off) tf Qg Qgs Qgd Rg Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Equivalent Output Capacitance Turn-on Delay Time Rise Time Off-voltageRise Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Input Resistance Test Conditions VDS=15 V, ID =11 A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. 19 2565 511 77 315 23 23 75 22 84 11 35 1.6 Max. Unit S pF pF pF pF ns ns ns ns nC nC nC Ω VGS = 0V, VDS = 0V to 400V VDD =250 V, ID = 11A RG = 4.7Ω VGS = 10 V (see Figure 19) VDD = 400V, ID =22 A, VGS = 10V, (see Figure 23) f=1MHz Gate DC Bias=0 Test Signal Level=20mV Open Drain Table 8: Source Drain Diode Symbol ISD ISDM ( ) VSD (1) trr Qrr IRRM trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 22 A, VGS = 0 ISD = 22A, di/dt = 100 A/µs VDD = 100 V, Tj = 25°C (see Figure 21) ISD = 22 A, di/dt = 100 A/µs VDD = 100 V, Tj = 150°C (see Figure 21) 460 6.9 30 532 8.25 31 Test Conditions Min. Typ. Max. 22 88 1.3 Unit A A V ns µC A ns µC A (1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (*) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDS 3/16 STP25NM50N - STF25NM50N - STB25NM50N/-1 - STW25NM50N Figure 3: Safe Operating Area For TO-220/ I²PAK/D²PAK Figure 6: Thermal Impedance TO-220/I²PAK/ D²PAK Figure 4: Safe Operating Area For TO-220FP Figure 7: Thermal Impedance For TO-220FP Figure 5: Safe Operating Area For TO-247 Figure 8: Thermal Impedance For TO-247 4/16 STB25NM50N/-1 - STW25NM50N - STP25NM50N - STF25NM50N Figure 9: Output Characteristics Figure 12: Transfer Characteristics Figure 10: Transconductance Figure 13: Static Drain-Source On Resistance Figure 11: Gate Charge vs Gate-source Voltage Figure 14: Capacitance Variations 5/16 STP25NM50N - STF25NM50N - STB25NM50N/-1 - STW25NM50N Figure 15: Normalized Gate Threshold Voltage vs Temperature Figure 17: Normalized On Resistance vs Temperature Figure 16: Source-Drain Forward Characteristics Figure 18: Normalized BVDSS vs Temperature 6/16 STB25NM50N/-1 - STW25NM50N - STP25NM50N - STF25NM50N Figure 19: Unclamped Inductive Load Test Circuit Figure 22: Unclamped Inductive Wafeform Figure 20: Switching Times Test Circuit For Resistive Load Figure 23: Gate Charge Test Circuit Figure 21: Test Circuit For Inductive Load Switching and Diode Recovery Times 7/16 STP25NM50N - STF25NM50N - STB25NM50N/-1 - STW25NM50N In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 8/16 STB25NM50N/-1 - STW25NM50N - STP25NM50N - STF25NM50N D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 24.4 100 30.4 26.4 13.2 mm MIN. MAX. 330 0.059 0.504 0795 0.960 3.937 1.197 BULK QTY 1000 1.039 0.520 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T W mm MIN. 10.5 15.7 1.5 1.59 1.65 11.4 4.8 3.9 11.9 1.9 50 0.25 23.7 0.35 24.3 MAX. 10.7 15.9 1.6 1.61 1.85 11.6 5.0 4.1 12.1 2.1 inch MIN. 0.413 0.618 0.059 0.062 0.065 0.449 0.189 0.153 0.468 0.075 1.574 0.0098 0.0137 0.933 0.956 MAX. 0.421 0.626 0.063 0.063 0.073 0.456 0.197 0.161 0.476 0.082 BASE QTY 1000 * on sales type 9/16 STP25NM50N - STF25NM50N - STB25NM50N/-1 - STW25NM50N TO-220 MECHANICAL DATA DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154 øP Q 10/16 STB25NM50N/-1 - STW25NM50N - STP25NM50N - STF25NM50N TO-220FP MECHANICAL DATA mm. MIN. 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 28.6 9.8 2.9 15.9 9 3 30.6 10.6 3.6 16.4 9.3 3.2 1.126 .0385 0.114 0.626 0.354 0.118 TYP MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.141 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 DIM. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 Ø A B L3 L6 L7 F1 D F G1 H F2 L2 L5 E 123 L4 G 11/16 STP25NM50N - STF25NM50N - STB25NM50N/-1 - STW25NM50N TO-247 MECHANICAL DATA mm. MIN. 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 3.65 5.50 0.140 0.177 0.216 14.80 4.30 0.560 0.14 0.728 0.143 0.216 TYP MAX. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 MIN. 0.19 0.086 0.039 0.079 0.118 0.015 0.781 0.608 0.214 0.582 0.17 inch TYP. MAX. 0.20 0.102 0.055 0.094 0.134 0.03 0.793 0.620 DIM. A A1 b b1 b2 c D E e L L1 L2 øP øR S 12/16 STB25NM50N/-1 - STW25NM50N - STP25NM50N - STF25NM50N TO-262 (I2PAK) MECHANICAL DATA mm. DIM. MIN. A A1 b b1 c c2 D e e1 E L L1 L2 4.40 2.40 0.61 1.14 0.49 1.23 8.95 2.40 4.95 10 13 3.50 1.27 TYP MAX. 4.60 2.72 0.88 1.70 0.70 1.32 9.35 2.70 5.15 10.40 14 3.93 1.40 MIN. 0.173 0.094 0.024 0.044 0.019 0.048 0.352 0.094 0.194 0.393 0.511 0.137 0.050 TYP. MAX. 0.181 0.107 0.034 0.066 0.027 0.052 0.368 0.106 0.202 0.410 0.551 0.154 0.055 inch 13/16 STP25NM50N - STF25NM50N - STB25NM50N/-1 - STW25NM50N D2PAK MECHANICAL DATA TO-247 MECHANICAL DATA mm. DIM. MIN. A A1 A2 B B2 C C2 D D1 E E1 G L L2 L3 M R V2 0º 4.88 15 1.27 1.4 2.4 0.4 4º 10 8.5 5.28 15.85 1.4 1.75 3.2 0.192 0.590 0.050 0.055 0.094 0.015 4.4 2.49 0.03 0.7 1.14 0.45 1.23 8.95 8 10.4 0.393 0.334 0.208 0.625 0.055 0.068 0.126 TYP MAX. 4.6 2.69 0.23 0.93 1.7 0.6 1.36 9.35 MIN. 0.173 0.098 0.001 0.027 0.044 0.017 0.048 0.352 0.315 TYP. MAX. 0.181 0.106 0.009 0.036 0.067 0.023 0.053 0.368 inch 3 1 14/16 STB25NM50N/-1 - STW25NM50N - STP25NM50N - STF25NM50N Table 9: Revision History Date 30-Nov-2004 08-Mar-2005 22-Mar-2005 13-Apr-2005 28-Apr-2005 16-May-2005 17-Jun-2005 07-Sep-2005 05-Oct-2005 Revision 1 2 3 4 5 6 7 8 9 Description of Changes First Release. Inserted Curves Modified title Modified some values Modified some values in Table 8 Modified values in tab7 Inserted new row in table 6 Inserted ecopack indication Modified curves 9-12 15/16 STP25NM50N - STF25NM50N - STB25NM50N/-1 - STW25NM50N Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners © 2005 STMicroelectronics - All Rights Reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 16/16