STP265N6F6AG

STP265N6F6AG Automotive-grade N-channel 60 V, 2.3 mΩ typ., 180 A STripFET™ F6 Power MOSFET in a TO-220 package Datasheet - production data Features      Order code VDS RDS(on) max ID STP265N6F6AG 60 V 2.85 mΩ 180 A AEC-Q101 qualified Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Applications  Figure 1: Internal schematic diagram Switching applications Description D(2, TAB) This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. G(1) S(3) AM01475v1_Tab Table 1: Device summary Order code Marking Package Packing STP265N6F6AG 265N6F6 TO-220 Tube November 2016 DocID027281 Rev 3 This is information on a product in full production. 1/13 www.st.com Contents STP265N6F6AG Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 5 2/13 TO-220 mechanical data ................................................................. 10 Revision history ............................................................................ 12 DocID027281 Rev 3 STP265N6F6AG 1 Electrical ratings Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 60 V VGS Gate-source voltage ± 20 V ID(1) Drain current (continuous) at TC = 25 °C 180 A ID(1) Drain current (continuous) at TC = 100 °C 180 A Drain current (pulsed) 720 A PTOT Total dissipation at TC = 25 °C 300 W EAS Single pulse avalanche energy (Starting TJ = 25 °C, ID = 80 A) 720 mJ Tstg Storage temperature range - 55 to 175 °C IDM (2) Tj Operating junction temperature range Notes: (1)Current (2) limited by package. Pulse width limited by safe operating area. Table 3: Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case max 0.5 °C/W Rthj-amb Thermal resistance junction-amb max 62.5 °C/W DocID027281 Rev 3 3/13 Electrical characteristics 2 STP265N6F6AG Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 4: On/off states Symbol Parameter Test conditions V(BR)DSS Drain-source breakdown voltage ID = 250 µA, VGS = 0 V Min. Typ. Max. 60 Unit V VDS = 60 V, VGS = 0 V 1 µA VDS = 60 V, TC=125 °C(1) VGS = 0 V 100 µA Gate-body leakage current VGS = ± 20 V, VDS = 0 V ± 100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 4 V RDS(on) Static drain-source onresistance VGS = 10 V, ID = 60 A 2.85 mΩ IDSS IGSS Zero gate voltage drain current 2 2.3 Notes: (1)Defined by design, not subject to production test. Table 5: Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Test conditions VDS = 25 V, f = 1 MHz, VGS = 0 V VDD = 30 V, ID = 120 A, VGS = 10 V (see Figure 14: "Test circuit for gate charge behavior") Min. Typ. Max. Unit - 11800 - pF - 1235 - pF - 488 - pF - 183 - nC - 53 - nC - 41 - nC Min. Typ. Max. Unit - 31 - ns - 165 - ns - 144 - ns - 63 - ns Table 6: Switching times Symbol td(on) tr td(off) tf 4/13 Parameter Turn-on delay time Rise time Turn-off-delay time Fall time Test conditions VDD = 30 V, ID = 60 A RG = 4.7 Ω, VGS = 10 V (see Figure 13: "Test circuit for resistive load switching times" and Figure 18: "Switching time waveform") DocID027281 Rev 3 STP265N6F6AG Electrical characteristics Table 7: Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current 180 A ISDM (1) Source-drain current (pulsed) 720 A VSD (2) Forward on voltage 1.1 V ISD = 180 A, VGS = 0 V trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current ISD = 120 A, VDD = 48 V di/dt = 100 A/µs, Tj = 150 °C (see Figure 15: "Test circuit for inductive load switching and diode recovery times") - 56 - ns - 116 - nC - 3.8 - A Notes: (1) Pulse width limited by safe operating area. (2)Pulsed: pulse duration = 300 µs, duty cycle 1.5% DocID027281 Rev 3 5/13 Electrical characteristics 2.1 STP265N6F6AG Electrical characteristics (curves) Figure 2: Safe operating area Figure 3: Thermal impedance 280tok K ᵟ =0.5 0.2 0.1 10 0.05 -1 0.02 Zth=k Rthj-c ᵟ =tp/ t 0.01 Single pulse tp t -2 10 -5 10 Figure 4: Output characteristics -4 10 -3 10 -2 10 -1 tp (s) Figure 5: Transfer characteristics Figure 6: Normalized V(BR)DSS vs. temperature AM09071v1 V(BR)DSS 10 (norm) ID=1mA Figure 7: Static drain-source on-resistance GIPD101220141320FSR R DS(on) (mΩ) V GS= 10V 1.1 2.6 1.0 2.4 0.9 2.2 0.8 2.0 0.7 0.6 -75 6/13 -25 25 75 125 175 TJ(°C) 1.8 0 DocID027281 Rev 3 20 40 60 80 100 ID(A) STP265N6F6AG Electrical characteristics Figure 8: Gate charge vs. gate-source voltage Figure 9: Capacitance variations Figure 10: Normalized gate threshold voltage vs. temperature Figure 11: Normalized on resistance vs. temperature Figure 12: Source-drain diode forward characteristics DocID027281 Rev 3 7/13 Test circuits 3 STP265N6F6AG Test circuits Figure 13: Test circuit for resistive load switching times Figure 14: Test circuit for gate charge behavior Figure 15: Test circuit for inductive load switching and diode recovery times Figure 16: Unclamped inductive load test circuit Figure 17: Unclamped inductive waveform 8/13 DocID027281 Rev 3 Figure 18: Switching time waveform STP265N6F6AG 4 Package information Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. DocID027281 Rev 3 9/13 Package information 4.1 STP265N6F6AG TO-220 mechanical data Figure 19: TO-220 type A package outline 10/13 DocID027281 Rev 3 STP265N6F6AG Package information Table 8: TO-220 type A mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.55 c 0.48 0.70 D 15.25 15.75 D1 1.27 E 10.00 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13.00 14.00 L1 3.50 3.93 L20 16.40 L30 28.90 øP 3.75 3.85 Q 2.65 2.95 DocID027281 Rev 3 11/13 Revision history 5 STP265N6F6AG Revision history Table 9: Document revision history Date Revision 10-Dec-2014 1 First release. 16-Dec-2014 2 Document status promoted from preliminary to production data. 3 The part number STW265N6F6AG has been moved to a separate datasheet. Updated title, cover image, features and description in cover page. Updated Table 1: "Device summary", Table 3: "Thermal data", Section 4: "Package information". Minor text changes. 16-Nov-2016 12/13 Changes DocID027281 Rev 3 STP265N6F6AG IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2016 STMicroelectronics – All rights reserved DocID027281 Rev 3 13/13