STP26N60DM6

STP26N60DM6 Datasheet N-channel 600 V, 165 mΩ typ., 18 A, MDmesh DM6 Power MOSFET in a TO‑220 package Features TAB 1 2 3 TO-220 D(2, TAB) Order code VDS RDS(on) max. ID STP26N60DM6 600 V 195 mΩ 18 A • • Fast-recovery body diode Lower RDS(on) per area vs previous generation • • • • Low gate charge, input capacitance and resistance 100% avalanche tested Extremely high dv/dt ruggedness Zener-protected Applications G(1) • Switching applications Description S(3) AM01476v1_tab This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters. Product status link STP26N60DM6 Product summary Order code STP26N60DM6 Marking 26N60DM6 Package TO-220 Packing Tube DS12853 - Rev 3 - September 2020 For further information contact your local STMicroelectronics sales office. www.st.com STP26N60DM6 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Value Unit Gate-source voltage ±25 V Drain current (continuous) at TC = 25 °C 18 A Drain current (continuous) at TC = 100 °C 11 A Drain current (pulsed) 60 A Total power dissipation at TC = 25 °C 130 W dv/dt(2) Peak diode recovery voltage slope 100 V/ns di/dt(2) Peak diode recovery current slope 1000 A/µs dv/dt(3) MOSFET dv/dt ruggedness 100 V/ns Tstg Storage temperature range -55 to 150 °C Value Unit VGS ID IDM (1) PTOT Tj Parameter Operating junction temperature range 1. Pulse width is limited by safe operating area. 2. ISD ≤ 18 A, VDS (peak) < V(BR)DSS, VDD = 400 V. 3. VDS ≤ 480 V Table 2. Thermal data Symbol Parameter Rthj-case Thermal resistance junction-case 0.96 °C/W Rthj-amb Thermal resistance junction-ambient 62.5 °C/W Value Unit Table 3. Avalanche characteristics Symbol DS12853 - Rev 3 Parameter IAR Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax) 4 A EAS Single pulse avalanche energy (starting TJ = 25 °C, ID = IAR, VDD = 50 V) 360 mJ page 2/12 STP26N60DM6 Electrical characteristics 2 Electrical characteristics TC = 25 °C unless otherwise specified Table 4. On/off states Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage VGS = 0 V, ID = 1 mA Min. Typ. 600 Zero gate voltage drain current 1 µA 100 µA ±5 µA 4 4.75 V 165 195 mΩ Min. Typ. Max. Unit - 940 - pF - 75 - pF - 4 - pF VGS = 0 V, VDS = 600 V, TC = 125 °C(1) IGSS Gate-body leakage current VDS = 0 V, VGS = ±25 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 9 A Unit V VGS = 0 V, VDS = 600 V IDSS Max. 3.25 1. Defined by design, not subject to production test. Table 5. Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance (1) Test conditions VDS = 100 V, f = 1 MHz, VGS = 0 V Equivalent output capacitance VDS = 0 to 480 V, VGS = 0 V - 157 - pF RG Intrinsic gate resistance f = 1 MHz, ID = 0 A - 4.8 - Ω Qg Total gate charge VDD = 480 V, ID = 18 A, - 24 - nC Qgs Gate-source charge VGS = 0 to 10 V - 6 - nC Qgd Gate-drain charge (see Figure 14. Test circuit for gate charge behavior) - 11.5 - nC Coss eq. 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. Table 6. Switching times Symbol td(on) tr td(off) tf DS12853 - Rev 3 Parameter Test conditions Min. Typ. Max. Unit Turn-on delay time VDD = 300 V, ID = 9 A, - 13 - ns Rise time RG = 4.7 Ω, VGS = 10 V - 11 - ns Turn-off delay time (see Figure 13. Test circuit for resistive load switching times and Figure 18. Switching time waveform) - 39 - ns - 8 - ns Fall time page 3/12 STP26N60DM6 Electrical characteristics Table 7. Source drain diode Symbol ISD Parameter Test conditions Min. Typ. Max. Unit Source-drain current - 18 A ISDM(1) Source-drain current (pulsed) - 60 A VSD(2) Forward on voltage VGS = 0 V, ISD = 18 A - 1.6 V trr Reverse recovery time ISD = 18 A, di/dt = 100 A/µs, - 100 ns Qrr Reverse recovery charge VDD = 60 V - 0.35 µC Reverse recovery current (see Figure 15. Test circuit for inductive load switching and diode recovery times) - 7 A trr Reverse recovery time ISD = 18 A, di/dt = 100 A/µs, - 170 ns Qrr Reverse recovery charge VDD = 60 V, Tj = 150 °C - 1.02 µC Reverse recovery current (see Figure 15. Test circuit for inductive load switching and diode recovery times) - 12 A IRRM IRRM 1. Pulse width is limited by safe operating area. 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5 %. DS12853 - Rev 3 page 4/12 STP26N60DM6 Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 2. Normalized thermal impedance Figure 1. Safe operating area ID (A) GADG291120181526SOA Operation in this area is limited by RDS(on) tp = 1 μs 101 tp = 1 ms tp = 10 μs TJ ≤ 150 °C, TC = 25 °C, single pulse 100 tp = 100 μs tp = 10 ms 10-1 10-1 100 101 VDS (V) 102 Figure 3. Output characteristics ID (A) Figure 4. Transfer characteristics ID (A) GADG291120180826OCH VGS = 10 V 50 VGS = 9 V VGS = 8 V 40 30 VGS = 7 V 20 20 10 10 VGS = 6 V 0 0 4 8 12 16 20 VDS (V) 0 4 Figure 5. Gate charge vs gate-source voltage VDS (V) GADG291120180831QVG VDD = 480 V, ID = 18 A 600 10 VDS 6 200 4 100 2 DS12853 - Rev 3 8 12 7 8 9 VGS (V) Figure 6. Capacitance variations C (pF) GADG291120180831CVR 10 3 CISS 10 2 300 4 6 8 Qgd Qgs VGS (V) 5 12 Qg 500 0 0 VDS = 20 V 50 40 30 400 GADG291120180826TCH 16 20 24 0 Qg (nC) COSS 10 1 f = 1 MHz 10 0 10 0 CRSS 10 1 10 2 VDS (V) page 5/12 STP26N60DM6 Electrical characteristics (curves) Figure 7. Static drain-source on-resistance RDS(on) (mΩ) GADG291120181528RID 180 Figure 8. Normalized on-resistance vs temperature RDS(on) (norm.) GADG291120180832RON 2.5 175 2.0 VGS = 10 V VGS = 10 V 170 1.5 165 1.0 160 0.5 155 150 0 3 6 9 12 15 18 ID (A) Figure 9. Normalized gate threshold voltage vs temperature VGS(th) (norm.) GADG291120181054VTH -25 25 75 125 Tj (°C) Figure 10. Normalized V(BR)DSS vs temperature V(BR)DSS (norm.) GADG291120181051BDV 1.10 1.1 1.05 1.0 1.00 0.9 ID = 1 mA ID = 250 µA 0.95 0.8 0.90 0.7 0.6 -75 0 -75 -25 25 75 125 Tj (°C) Figure 11. Output capacitance stored energy EOSS (µJ) GADG291120181055EOS 0.85 -75 -25 25 75 Tj (°C) Figure 12. Source-drain diode forward characteristics VSD (V) GADG291120181528SDF TJ = -50 °C 1.1 10 125 1.0 8 TJ = 25 °C 0.9 6 0.8 TJ = 150 °C 4 0.7 2 0 0 DS12853 - Rev 3 0.6 100 200 300 400 500 600 VDS (V) 0.5 0 3 6 9 12 15 18 ISD (A) page 6/12 STP26N60DM6 Test circuits 3 Test circuits Figure 13. Test circuit for resistive load switching times Figure 14. Test circuit for gate charge behavior VDD RL RL 2200 + μF 3.3 μF VDD VD IG= CONST VGS + pulse width RG VGS D.U.T. 2.7 kΩ 2200 μF pulse width D.U.T. 100 Ω VG 47 kΩ 1 kΩ AM01469v10 AM01468v1 Figure 15. Test circuit for inductive load switching and diode recovery times D G A D.U.T. S 25 Ω A L A VD 100 µH fast diode B B B 3.3 µF D G + Figure 16. Unclamped inductive load test circuit RG 1000 + µF 2200 + µF VDD 3.3 µF VDD ID D.U.T. S D.U.T. Vi _ pulse width AM01471v1 AM01470v1 Figure 18. Switching time waveform Figure 17. Unclamped inductive waveform ton V(BR)DSS td(on) toff td(off) tr tf VD 90% 90% IDM VDD 10% 0 ID VDD AM01472v1 VGS 0 VDS 10% 90% 10% AM01473v1 DS12853 - Rev 3 page 7/12 STP26N60DM6 Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 4.1 TO-220 type A package information Figure 19. TO-220 type A package outline 0015988_typeA_Rev_23 DS12853 - Rev 3 page 8/12 STP26N60DM6 TO-220 type A package information Table 8. TO-220 type A package mechanical data Dim. mm Min. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.55 c 0.48 0.70 D 15.25 15.75 D1 1.27 E 10.00 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13.00 14.00 L1 3.50 3.93 L20 16.40 L30 28.90 øP 3.75 3.85 Q 2.65 2.95 Slug flatness DS12853 - Rev 3 Typ. 0.03 0.10 page 9/12 STP26N60DM6 Revision history Table 9. Document revision history DS12853 - Rev 3 Date Version Changes 06-Dec-2018 1 First release. 18-Mar-2020 2 Modified Table 2. Thermal data and Table 4. On/off states. 10-Sep-2020 3 Updated Table 1. page 10/12 STP26N60DM6 Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 4.1 TO-220 type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 DS12853 - Rev 3 page 11/12 STP26N60DM6 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. 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Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2020 STMicroelectronics – All rights reserved DS12853 - Rev 3 page 12/12