STP26NM60N

STB26NM60N, STP26NM60N N-channel 600 V, 0.135 Ω typ., 20 A MDmesh™ II Power MOSFETs in D²PAK and TO-220 packages Datasheet - production data Features Order code TAB STB26NM60N TAB STP26NM60N 2 D PAK TO-220 1 2 3    VDS RDS(on) max ID 600 V 0.165 Ω 20 A 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Applications  Switching applications Figure 1: Internal schematic diagram Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. D(2) G(1) S(3) AM01475v1_no Tab_noZen Table 1: Device summary Order code STB26NM60N STP26NM60N December 2016 Marking 26NM60N Package Packaging D²PAK Tape and reel TO-220 Tube DocID15642 Rev 7 This is information on a product in full production. 1/17 www.st.com Contents STB26NM60N, STP26NM60N Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 5 2/17 4.1 D2PAK (TO-263) type A package information................................... 9 4.2 D2PAK packaging information ........................................................ 12 4.3 TO-220 type A package information................................................ 14 Revision history ............................................................................ 16 DocID15642 Rev 7 STB26NM60N, STP26NM60N 1 Electrical ratings Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 600 V VGS Gate-source voltage ±30 V ID Drain current (continuous) at TC = 25 °C 20 A ID Drain current (continuous) at TC = 100 °C 12.6 A Drain current (pulsed) 80 A Total dissipation at TC = 25 °C 140 W Peak diode recovery voltage slope 15 V/ns -55 to 150 °C (1) IDM PTOT (2) dv/dt Tstg Tj Storage temperature range Operating junction temperature range Notes: (1)Pulse (2)I SD width limited by safe operating area. ≤ 20 A, di/dt ≤ 400 A/µs, VDS(peak) ≤ V(BR)DSS, VDD = 80% V(BR)DSS Table 3: Thermal data Value Symbol Parameter TO-220 D²PAK Rthj-case Thermal resistance junction-case Rthj-amb Thermal resistance junction-ambient Rthj-pcb (1) Thermal resistance junction-pcb 0.89 62.5 30 Unit °C/W °C/W °C/W Notes: (1)When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 s. Table 4: Avalanche characteristics Symbol Parameter Value Unit IAS Single pulse avalanche current (pulse width limited by Tjmax) 6 A EAS Single pulse avalanche energy (starting TJ=25 °C, ID=IAS, VDD=50 V) 610 mJ DocID15642 Rev 7 3/17 Electrical characteristics 2 STB26NM60N, STP26NM60N Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 5: On/off states Symbol Parameter V(BR)DSS Drain-source breakdown voltage Test conditions ID = 1 mA, VGS = 0 V IDSS Zero gate voltage drain current IGSS Min. Typ. Max. 600 V VGS = 0 V, VDS = 600 V 1 VGS = 0 V, VDS = 600 V, TC= 125 °C (1) 100 Gate-body leakage current VDS = 0 V, VGS = ±25 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source onresistance VGS = 10 V, ID = 10 A Unit µA ±0.1 µA 3 4 V 0.135 0.165 Ω Min. Typ. Max. Unit - 1800 - pF - 115 - pF - 6 - pF VGS = 0 V, VDS = 0 to 480 V - 310 - pF - 60 - nC - 8.5 - nC - 30 - nC - 2.8 - Ω 2 Notes: (1)Defined by design, not subject to production test. Table 6: Dynamic Symbol Ciss Parameter Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Coss eq. (1) Test conditions Equivalent output capacitance VDS = 50 V, f = 1 MHz, VGS = 0 V Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge VDD = 480 V, ID = 20 A, VGS = 10 V (see Figure 14: "Test circuit for gate charge behavior" RG Gate input resistance f=1 MHz, ID=0 A Notes: (1)C oss eq. is defined as a constant equivalent capacitance giving the same charging time as C oss when VDS increases from 0 to 80% VDS 4/17 DocID15642 Rev 7 STB26NM60N, STP26NM60N Electrical characteristics Table 7: Switching times Symbol td(on) Parameter Turn-on delay time tr Rise time td(off) Turn-off delay time tf Fall time Test conditions Min. Typ. Max. Unit VDD = 300 V, ID = 10 A, RG = 4.7 Ω, VGS = 10 V (see Figure 13: "Test circuit for resistive load switching times" and Figure 18: "Switching time waveform") - 13 - ns - 25 - ns - 85 - ns - 50 - ns Min. Typ. Max. Unit Table 8: Source-drain diode Symbol Parameter Test conditions ISD Source-drain current - 20 A ISDM(1) Source-drain current (pulsed) - 80 A 1.5 V VSD(2) Forward on voltage ISD = 20 A, VGS = 0 - trr Reverse recovery time - 370 ns Qrr Reverse recovery charge - 5.8 µC IRRM Reverse recovery current ISD = 20 A, di/dt = 100 A/µs VDD = 60 V (see Figure 15: "Test circuit for inductive load switching and diode recovery times") - 31.6 A ISD = 20 A, di/dt = 100 A/µs VDD = 60 V, Tj = 150 °C (see Figure 15: "Test circuit for inductive load switching and diode recovery times") - 450 ns - 7.5 µC - 32.5 A trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current Notes: (1)Pulse width limited by safe operating area. (2)Pulsed: pulse duration = 300 µs, duty cycle 1.5% DocID15642 Rev 7 5/17 Electrical characteristics 2.1 STB26NM60N, STP26NM60N Electrical characteristics (curves) Figure 2: Safe operating area Figure 3: Thermal impedance Figure 4: Output characteristics Figure 5: Transfer characteristics Figure 6: Gate charge vs gate-source voltage Figure 7: Static drain-source on-resistance W 6/17 DocID15642 Rev 7 STB26NM60N, STP26NM60N Electrical characteristics Figure 8: Capacitance variations Figure 9: Source-drain diode forward characteristics Figure 10: Normalized gate threshold voltage vs temperature Figure 11: Normalized on-resistance vs temperature Figure 12: Normalized V(BR)DSS vs temperature DocID15642 Rev 7 7/17 Test circuits 3 8/17 STB26NM60N, STP26NM60N Test circuits Figure 13: Test circuit for resistive load switching times Figure 14: Test circuit for gate charge behavior Figure 15: Test circuit for inductive load switching and diode recovery times Figure 16: Unclamped inductive load test circuit Figure 17: Unclamped inductive waveform Figure 18: Switching time waveform DocID15642 Rev 7 STB26NM60N, STP26NM60N 4 Package information Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 4.1 D2PAK (TO-263) type A package information Figure 19: D²PAK (TO-263) type A package outline 0079457_A_rev22 DocID15642 Rev 7 9/17 Package information STB26NM60N, STP26NM60N Table 9: D²PAK (TO-263) type A package mechanical data mm Dim. Min. Max. A 4.40 4.60 A1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 D 8.95 9.35 D1 7.50 7.75 8.00 D2 1.10 1.30 1.50 E 10 E1 8.50 8.70 8.90 E2 6.85 7.05 7.25 e 10.40 2.54 e1 4.88 5.28 H 15 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 R V2 10/17 Typ. 0.4 0° DocID15642 Rev 7 8° STB26NM60N, STP26NM60N Package information Figure 20: D²PAK (TO-263) recommended footprint (dimensions are in mm) DocID15642 Rev 7 11/17 Package information 4.2 STB26NM60N, STP26NM60N D2PAK packaging information Figure 21: Tape outline 12/17 DocID15642 Rev 7 STB26NM60N, STP26NM60N Package information Figure 22: Reel outline Table 10: D²PAK tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. A0 10.5 10.7 A B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 F 11.4 11.6 N 100 K0 4.8 5.0 T P0 3.9 4.1 P1 11.9 12.1 Base quantity 1000 P2 1.9 2.1 Bulk quantity 1000 R 50 T 0.25 0.35 W 23.7 24.3 DocID15642 Rev 7 Min. Max. 330 13.2 26.4 30.4 13/17 Package information 4.3 STB26NM60N, STP26NM60N TO-220 type A package information Figure 23: TO-220 type A package outline 14/17 DocID15642 Rev 7 STB26NM60N, STP26NM60N Package information Table 11: TO-220 type A mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.55 c 0.48 0.70 D 15.25 15.75 D1 1.27 E 10.00 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13.00 14.00 L1 3.50 3.93 L20 16.40 L30 28.90 øP 3.75 3.85 Q 2.65 2.95 DocID15642 Rev 7 15/17 Revision history 5 STB26NM60N, STP26NM60N Revision history Table 12: Document revision history Date Revision 29-Apr-2009 1 First release. 17-Dec-2009 2 Added new package, mechanical data: D²PAK 20-Jun-2011 3 Inserted device in I²PAK. 13-Mar-2012 4 Updated PTOT and derating factor in Table 2. Update Rthj-case for TO-220FP in Table 3. Update Figure 10 and Figure 15. Update Section 5: Packaging mechanical data. 20-Jun-2012 5 Updated title on the cover page. Minor text changes. 09-Sep-2013 6 – The part numbers STI26NM60N and STW26NM60N have been moved to the separate datasheets – Modified: VGS value in Table 2. 7 The part number STF26NM60N has been moved to a separate datasheet. Modified Table 2: "Absolute maximum ratings", Table 3: "Thermal data", Table 5: "On/off states", Table 6: "Dynamic" and Table 7: "Switching times". Modified Section 2.1: "Electrical characteristics (curves)". Minor text changes. 12-Dec-2016 16/17 Changes DocID15642 Rev 7 STB26NM60N, STP26NM60N IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2016 STMicroelectronics – All rights reserved DocID15642 Rev 7 17/17