STP28N65M2

STB28N65M2, STF28N65M2, STP28N65M2, STW28N65M2 N-channel 650 V, 0.15 Ω typ., 20 A MDmesh™ M2 Power MOSFETs in D²PAK, TO-220FP, TO-220 and TO-247 packages Datasheet - preliminary data Features TAB Order codes VDS RDS(on) max ID 650 V 0.18 Ω 20 A STB28N65M2 3 1 1 D2PAK 2 3 STF28N65M2 STP28N65M2 TO-220FP STW28N65M2 TAB • Extremely low gate charge • Excellent output capacitance (Coss) profile 3 1 2 2 TO-220 • 100% avalanche tested 3 1 • Zener-protected TO-247 Figure 1. Internal schematic diagram , TAB Applications • Switching applications Description These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters. AM15572v1 Table 1. Device summary Order codes Marking STB28N65M2 STF28N65M2 Package Packaging D2PAK Tape and reel TO-220FP 28N65M2 STP28N65M2 TO-220 STW28N65M2 TO-247 December 2014 DocID027256 Rev 1 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. Tube 1/22 www.st.com Contents STB28N65M2, STF28N65M2, STP28N65M2, STW28N65M2 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits .............................................. 9 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4.1 D²PAK, STB28N65M2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4.2 TO-220FP, STF28N65M2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 4.3 TO-220, STP28N65M2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 4.4 TO-247, STW28N65M2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 5 Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 2/22 DocID027256 Rev 1 STB28N65M2, STF28N65M2, STP28N65M2, STW28N65M2 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter Unit D2PAK, TO-220, TO-247 VGS ID ± 25 Drain current (continuous) at TC = 25 °C ID IDM Gate-source voltage VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; TC = 25 °C) dv/dt Tstg Tj A (1) 13 A 13 80 Total dissipation at TC = 25 °C (4) (1) 20 Drain current (pulsed) PTOT dv/dt (3) V 20 Drain current (continuous) at TC = 100 °C (2) TO-220FP A 170 Peak diode recovery voltage slope 15 MOSFET dv/dt ruggedness 50 30 W 2500 V V/ns Storage temperature - 55 to 150 °C Max. operating junction temperature 150 1. Current limited by package. 2. Pulse width limited by safe operating area. 3. ISD ≤ 20 A, di/dt ≤ 400 A/µs; VDS peak < V(BR)DSS, VDD=520 V 4. VDS ≤ 520 V Table 3. Thermal data Value Symbol Parameter Rthj-case Thermal resistance junction-case max 0.74 Rthj-pcb(1) Thermal resistance junction-pcb max 30 Rthj-amb Unit D2PAK TO-220FP Thermal resistance junction-ambient max TO-220 4.17 TO-247 0.74 °C/W °C/W 62.5 50 °C/W 1. When mounted on 1 inch² FR-4, 2 Oz copper board Table 4. Avalanche characteristics Symbol Parameter Value Unit IAR Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax) 2.4 A EAS Single pulse avalanche energy (starting Tj = 25°C, ID = IAR; VDD = 50 V) 760 mJ DocID027256 Rev 1 3/22 22 Electrical characteristics 2 STB28N65M2, STF28N65M2, STP28N65M2, STW28N65M2 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 5. On /off states Symbol V(BR)DSS Parameter Drain-source breakdown voltage IDSS Zero gate voltage drain current IGSS Gate-body leakage current Test conditions VGS = 0, ID = 1 mA Min. Typ. Max. 650 Unit V VGS = 0, VDS = 650 V 1 µA VGS = 0, VDS = 650 V TC = 125 °C 100 µA VDS = 0, VGS = ± 25 V ±10 µA 3 4 V 0.15 0.18 Ω Min. Typ. Max. Unit - 1440 - pF - 60 - pF - 2 - pF VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source on-resistance 2 VGS = 10 V, ID = 10 A Table 6. Dynamic Symbol Parameter Test conditions Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Coss eq(1) Equivalent output capacitance VGS = 0, VDS = 0 to 520 V - 307 - pF RG Intrinsic gate resistance f = 1 MHz open drain - 4.9 - Ω Qg Total gate charge - 35 - nC Qgs Gate-source charge - 6 - nC Qgd Gate-drain charge VDD = 520 V, ID = 20 A, VGS = 10 V (see Figure 19) - 15 - nC VDS = 100 V, f = 1 MHz, VGS = 0 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS Table 7. Switching times Symbol td(on) tr td(off) tf 4/22 Parameter Test conditions Turn-on delay time Rise time Turn-off delay time VDD = 325 V, ID = 10 A, RG = 4.7 Ω, VGS = 10 V (see Figure 18 and Figure 23) Fall time DocID027256 Rev 1 Min. Typ. Max. Unit - 13.4 - ns - 10 - ns - 59 - ns - 8.8 - ns STB28N65M2, STF28N65M2, STP28N65M2, STW28N65M2 Electrical characteristics Table 8. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit Source-drain current - 20 A ISDM (1) Source-drain current (pulsed) - 80 A VSD (2) Forward on voltage - 1.6 V ISD trr VGS = 0, ISD = 20 A Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current ISD = 20 A, di/dt = 100 A/µs VDD = 60 V (see Figure 20) ISD = 20 A, di/dt = 100 A/µs VDD = 60 V, Tj = 150 °C (see Figure 20) - 384 ns - 5.7 µC - 30 A - 544 ns - 8.2 µC - 30.5 A 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% DocID027256 Rev 1 5/22 22 Electrical characteristics 2.1 STB28N65M2, STF28N65M2, STP28N65M2, STW28N65M2 Electrical characteristics (curves) Figure 2. Safe operating area for D2PAK and TO-220 Figure 3. Thermal impedance for D2PAK and TO-220 *,3*07 R Q 2S /LP HUD LWH WLRQ G LQ E\ WK P LV D[ DU 5 HD LV '6 ,' $  —V —V PV PV  7M ƒ& 7F ƒ& 6LQJOHSXOVH      9'69 Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP *,3*07  RQ —V /L 2 ' 6 —V P  SH UD LWH WLR G QL E\ Q P WKL D[ VD 5 UH D LV ,' $ PV  PV  7M ƒ& 7F ƒ& 6LQJOHSXOVH      9'69 Figure 6. Safe operating area for TO-247 LV R Q —V '6 2S /LP HUDW LWH LRQ GE LQ \P WKLV D[ DUH 5 D  Figure 7. Thermal impedance for TO-247 *,3*07 ,' $ —V PV  PV 7M ƒ& 7F ƒ& 6LQJOHSXOVH   6/22    9'69 DocID027256 Rev 1 STB28N65M2, STF28N65M2, STP28N65M2, STW28N65M2 Figure 8. Output characteristics *,3*07 ,' $ Electrical characteristics Figure 9. Transfer characteristics *,3*07 ,' $ 9'6 9 9*6 9   9     9       9      9'69 Figure 10. Normalized gate threshold voltage vs. temperature GIPD180920141442FSR VGS(th) (norm) ID = 250 µA 1.1   1.08 0.9 1.00 0.8 0.96 0.7 0.92 25 75 125 Tj(°C) Figure 12. Static drain-source on-resistance *,3*07 5'6RQ ȍ  9*6 9 0.88 -75  9*69 GIPD180920141448FSR ID= 1mA -25 25 75 125 Tj(°C) Figure 13. Normalized on-resistance vs. temperature GIPD180920141459FSR RDS(on) (norm) 2.2   V(BR)DSS (norm) 1.04 -25  Figure 11. Normalized V(BR)DSS vs. temperature 1.0 0.6 -75  VGS= 10V 1.8  1.4   1  0.6        ,'$ 0.2 -75 DocID027256 Rev 1 -25 25 75 125 Tj(°C) 7/22 22 Electrical characteristics STB28N65M2, STF28N65M2, STP28N65M2, STW28N65M2 Figure 14. Gate charge vs gate-source voltage *,3*07 9'6 9*6 9 9'6  9 9'' 9 ,' $   Figure 15. Capacitance variations *,3*07 & S)  &LVV        &RVV             4JQ& Figure 16. Output capacitance stored energy   &UVV 9'69 Figure 17. Source-drain diode forward characteristics *,3*07 96'9              *,3*07 (RVV —- 8/22  7- ƒ& 7- ƒ&       9'69 DocID027256 Rev 1   7- ƒ&      ,6'$ STB28N65M2, STF28N65M2, STP28N65M2, STW28N65M2 3 Test circuits Test circuits Figure 18. Switching times test circuit for resistive load Figure 19. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF VDD IG=CONST VD VGS 100Ω Vi=20V=VGMAX RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 Figure 20. Test circuit for inductive load switching and diode recovery times A A AM01469v1 Figure 21. Unclamped inductive load test circuit L A D G FAST DIODE D.U.T. S 3.3 μF B B B VD L=100μH 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 22. Unclamped inductive waveform Figure 23. Switching time waveform ton 9%5'66 tdon 9' toff tr tdoff tf 90% 90% ,'0 10% ,' 9'' 10% 0 9'' VDS 90% VGS $0Y 0 DocID027256 Rev 1 10% AM01473v1 9/22 22 Package mechanical data 4 STB28N65M2, STF28N65M2, STP28N65M2, STW28N65M2 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 4.1 D²PAK, STB28N65M2 Figure 24. D2PAK drawing B9 10/22 DocID027256 Rev 1 STB28N65M2, STF28N65M2, STP28N65M2, STW28N65M2 Package mechanical data Table 9. D²PAK mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 A1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 D 8.95 9.35 D1 7.50 7.75 8.00 D2 1.10 1.30 1.50 E 10 E1 8.50 8.70 8.90 E2 6.85 7.05 7.25 10.40 e 2.54 e1 4.88 5.28 H 15 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 R V2 0.4 0° 8° DocID027256 Rev 1 11/22 22 Package mechanical data STB28N65M2, STF28N65M2, STP28N65M2, STW28N65M2 Figure 25. D2PAK footprint (a) )RRWSULQW a. All dimensions are in millimeters 12/22 DocID027256 Rev 1 STB28N65M2, STF28N65M2, STP28N65M2, STW28N65M2 4.2 Package mechanical data TO-220FP, STF28N65M2 Figure 26. TO-220FP drawing 7012510_Rev_K_B DocID027256 Rev 1 13/22 22 Package mechanical data STB28N65M2, STF28N65M2, STP28N65M2, STW28N65M2 Table 10. TO-220FP mechanical data mm Dim. Min. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 14/22 Typ. 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Ø 3 3.2 DocID027256 Rev 1 STB28N65M2, STF28N65M2, STP28N65M2, STW28N65M2 4.3 Package mechanical data TO-220, STP28N65M2 Figure 27. TO-220 type A drawing BW\SH$B5HYB7 DocID027256 Rev 1 15/22 22 Package mechanical data STB28N65M2, STF28N65M2, STP28N65M2, STW28N65M2 Table 11. TO-220 type A mechanical data mm Dim. Min. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 16/22 Typ. 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 ∅P 3.75 3.85 Q 2.65 2.95 DocID027256 Rev 1 STB28N65M2, STF28N65M2, STP28N65M2, STW28N65M2 4.4 Package mechanical data TO-247, STW28N65M2 Figure 28. TO-247 drawing 0075325_H DocID027256 Rev 1 17/22 22 Package mechanical data STB28N65M2, STF28N65M2, STP28N65M2, STW28N65M2 Table 12. TO-247 mechanical data mm. Dim. Min. Typ. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 L 14.20 14.80 L1 3.70 4.30 5.45 L2 18/22 Max. 5.60 18.50 ∅P 3.55 3.65 ∅R 4.50 5.50 S 5.30 5.50 DocID027256 Rev 1 5.70 STB28N65M2, STF28N65M2, STP28N65M2, STW28N65M2 5 Packing mechanical data Packing mechanical data Figure 29. Tape for D2PAK SLWFKHVFXPXODWLYH WROHUDQFHRQWDSHPP 7 3 7RSFRYHU WDSH 3 ' ( ) % . )RUPDFKLQHUHIRQO\ LQFOXGLQJGUDIWDQG UDGLLFRQFHQWULFDURXQG% : % $ 3 ' 8VHUGLUHFWLRQRIIHHG 5 %HQGLQJUDGLXV 8VHUGLUHFWLRQRIIHHG $0Y DocID027256 Rev 1 19/22 22 Packing mechanical data STB28N65M2, STF28N65M2, STP28N65M2, STW28N65M2 Figure 30. Reel for D2PAK 7 5(( /',0(16,216 PPPLQ $FFHVVKROH $WVO RWORFDWLRQ % ' & 1 $ )XOOUDGLXV *PHDVXUHGDWKXE 7DSHVORW LQFRUHIRU WDSHVWDUWPPPLQ ZLGWK $0Y Table 13. D²PAK tape and reel mechanical data Tape Reel mm mm Dim. 20/22 Dim. Min. Max. A0 10.5 10.7 A B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 F 11.4 11.6 N 100 K0 4.8 5.0 T P0 3.9 4.1 P1 11.9 12.1 Base qty 1000 P2 1.9 2.1 Bulk qty 1000 R 50 T 0.25 0.35 W 23.7 24.3 DocID027256 Rev 1 Min. Max. 330 13.2 26.4 30.4 STB28N65M2, STF28N65M2, STP28N65M2, STW28N65M2 6 Revision history Revision history Table 14. Document revision history Date Revision 09-Dec-2014 1 Changes First release. DocID027256 Rev 1 21/22 22 STB28N65M2, STF28N65M2, STP28N65M2, STW28N65M2 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2014 STMicroelectronics – All rights reserved 22/22 DocID027256 Rev 1