STP2N105K5

STD2N105K5, STP2N105K5, STU2N105K5 N-channel 1050 V, 6 Ω typ., 1.5 A MDmesh™ K5 Power MOSFETs in DPAK, TO-220 and IPAK packages Datasheet - production data Features TAB Order codes 3 1 VDS RDS(on) max ID PTOT STD2N105K5 DPAK STP2N105K5 1050 V TAB 8Ω 1.5 A 60 W STU2N105K5 TAB • Industry’s lowest RDS(on) x area 3 3 1 2 2 1 IPAK TO-220 • Industry’s best figure of merit (FoM) • Ultra low gate charge • 100% avalanche tested • Zener-protected Figure 1. Internal schematic diagram Applications '7$% • Switching applications Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. * 6 AM01476v1 Table 1. Device summary Order codes Marking Package Packaging DPAK Tape and reel STD2N105K5 STP2N105K5 2N105K5 TO-220 Tube STU2N105K5 November 2014 This is information on a product in full production. IPAK DocID026321 Rev 3 1/21 www.st.com Contents STD2N105K5, STP2N105K5, STU2N105K5 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits .............................................. 9 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4.1 DPAK, STD2N105K5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 4.2 TO-220, STP2N105K5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 4.3 IPAK, STU2N105K5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 2/21 DocID026321 Rev 3 STD2N105K5, STP2N105K5, STU2N105K5 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Value Unit Gate- source voltage ±30 V ID Drain current (continuous) at TC = 25 °C 1.5 A ID Drain current (continuous) at TC = 100 °C 0.95 A VGS Parameter IDM(1) Drain current (pulsed) 6 A PTOT Total dissipation at TC = 25 °C 60 W IAR Max current during repetitive or single pulse avalanche 0.5 A EAS Single pulse avalanche energy (starting TJ = 25 °C, ID=0.5 A, VDD= 50 V) 90 mJ dv/dt (2) Peak diode recovery voltage slope 4.5 V/ns dv/dt(3) MOSFET dv/dt ruggedness 50 V/ns -55 to 150 °C Value Unit Tj Tstg Operating junction temperature Storage temperature 1. Pulse width limited by safe operating area. 2. ISD ≤ 1.5 A, di/dt ≤ 100 A/µs, VDS(peak) ≤ V(BR)DSS. 3. VDS ≤ 840 V Table 3. Thermal data Symbol Parameter Rthj-case Thermal resistance junction-case max 2.08 °C/W Rthj-amb Thermal resistance junction-ambient max 62.50 °C/W DocID026321 Rev 3 3/21 21 Electrical characteristics 2 STD2N105K5, STP2N105K5, STU2N105K5 Electrical characteristics (Tcase =25 °C unless otherwise specified) Table 4. On /off states Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage ID = 1 mA, VGS = 0 Min. Typ. Max. Unit 1050 V VDS = 1050 V 1 µA VDS = 1050 V, TC=125 °C 50 µA Gate-body leakage current VGS = ± 20 V; VDS=0 ±10 µA VGS(th) Gate threshold voltage VDS = VGS, ID = 100 µA 4 5 V RDS(on) Static drain-source onresistance VGS = 10 V, ID = 0.75 A 6 8 Ω IDSS Zero gate voltage, drain current (VGS = 0) IGSS 3 Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit - 115 - pF - 15 - pF Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance - 0.5 - pF Co(tr)(1) Equivalent capacitance time related - 17 - pF Co(er)(2) Equivalent capacitance energy related - 6 - pF RG Intrinsic gate resistance f = 1 MHz open drain - 20 - Ω Qg Total gate charge - 10 - nC Qgs Gate-source charge - 1.5 - nC Qgd Gate-drain charge VDD = 840 V, ID = 1.5 A VGS =10 V (see Figure 18) - 8 - nC VDS =100 V, f=1 MHz, VGS=0 VGS = 0, VDS = 0 to 840 V 1. Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 2. energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS increases from 0 to 80% VDSS 4/21 DocID026321 Rev 3 STD2N105K5, STP2N105K5, STU2N105K5 Electrical characteristics Table 6. Switching times Symbol td(on) tr Parameter Test conditions tf Typ. Max Unit - 14.5 - ns - 8.5 - ns - 35 - ns - 38.5 - ns Min. Typ. Max Unit Turn-on delay time VDD = 525 V, ID = 0.75 A, RG = 4.7 Ω, VGS = 10 V (see Figure 17) Rise time td(off) Min. Turn-off-delay time Fall time Table 7. Source drain diode Symbol ISD ISDM (1) VSD (2) Parameter Test conditions Source-drain current - 1.5 A Source-drain current (pulsed) - 6 A 1.5 V Forward on voltage ISD = 1.5 A, VGS = 0 - trr Reverse recovery time - 326 ns Qrr Reverse recovery charge - 1.19 µC IRRM Reverse recovery current ISD = 1.5 A, di/dt = 100 A/µs VDD= 60 V (see Figure 19) - 7.3 A ISD = 1.5 A, di/dt = 100 A/µs VDD= 60 V TJ = 150 °C (see Figure 19) - 525 ns - 1.83 µC - 7 A trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Table 8. Gate-source Zener diode Symbol Parameter Test conditions V(BR)GSO Gate-source breakdown voltage IGS = ± 1mA, ID=0 Min Typ. Max. Unit 30 - - V The built-in back-to-back Zener diodes have specifically been designed to enhance the device's ESD capability. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device's integrity. These integrated Zener diodes thus avoid the usage of external components. DocID026321 Rev 3 5/21 21 Electrical characteristics 2.1 STD2N105K5, STP2N105K5, STU2N105K5 Electrical characteristics (curves) Figure 2. Safe operating area for DPAK and IPAK Figure 3. Thermal impedance for DPAK and IPAK GIPG210320141029SA ID (A) Operation in this area is Limited by max RDS(on) 1 100µs 1ms 10ms 0.1 Tj=150°C Tc=25°C Single pulse 0.01 0.1 10 1 100 1000 VDS(V) Figure 4. Safe operating area for TO-220 Figure 5. Thermal impedance for TO-220 GIPG210320141032SA ID (A) Operation in this area is Limited by max RDS(on) 100µs 1 1ms 10ms 0.1 Tj=150°C Tc=25°C Single pulse 0.01 0.1 10 1 VDS(V) 100 Figure 6. Output characteristics GIPG210320141045SA ID (A) VGS= 10,11V 2.5 Figure 7. Transfer characteristics GIPG210320141056SA ID (A) VDS= 20V 2.5 9V 2 2.0 8V 1.5 1.5 1.0 1 7V 0.5 0.5 6V 0.0 0 6/21 2 4 6 8 10 12 14 16 VDS(V) 0 5 DocID026321 Rev 3 6 7 8 9 10 VGS(V) STD2N105K5, STP2N105K5, STU2N105K5 Figure 8. Gate charge vs gate-source voltage GIPG210320141105SA VDS (V) VGS (V) VDS Figure 9. Static drain-source on-resistance GIPG210320141116SA RDS(on) (Ω) VGS= 10V 800 VDD = 840 V ID = 1.5 A 12 Electrical characteristics 700 10 9 600 8 500 6 400 8 7 300 4 200 2 0 0 6 100 4 2 6 10 8 0 Qg(nC) Figure 10. Capacitance variations GIPG210320141129SA C (pF) 5 0 1 ID(A) 2 Figure 11. Output capacitance stored energy GIPG210320141201SA E (µJ) 1000 100 2 10 1 0.1 0.1 10 1 VDS(V) 100 Figure 12. Normalized gate threshold voltage vs temperature GIPG210320141203SA VGS(th) (norm) 1.2 ID = 100 μA 0 0 200 400 600 800 VDS(V) Figure 13. Normalized on-resistance vs temperature GIPG210320141419SA RDS(on) (norm) 2.5 ID= 0.75A VGS= 10V 2 1 1.5 0.8 1 0.6 0.5 0.4 -100 -50 0 50 100 150 Tj(°C) 0 -100 DocID026321 Rev 3 -50 0 50 100 150 Tj(°C) 7/21 21 Electrical characteristics STD2N105K5, STP2N105K5, STU2N105K5 Figure 14. Source-drain diode forward characteristics GIPG210320141436SA VSD (V) GIPG210320141421SA V(BR)DSS (norm) 1.15 Tj= -50°C 1 Figure 15. Normalized V(BR)DSS vs temperature ID= 1mA 1.1 0.9 1.05 0.8 Tj= 25°C 1 0.7 0.95 Tj= 150°C 0.6 0.5 0.9 0 0.2 0.4 0.6 0.8 1 1.2 ISD(A) 0.85 -100 Figure 16.Maximum avalanche energy vs starting TJ *,3*6$ ($6 P-   ,' $ 9'' 9         8/21         7-ƒ& DocID026321 Rev 3 -50 0 50 100 150 Tj(°C) STD2N105K5, STP2N105K5, STU2N105K5 3 Test circuits Test circuits Figure 17. Switching times test circuit for resistive load Figure 18. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF IG=CONST VDD VGS 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 Figure 19. Test circuit for inductive load switching and diode recovery times A A AM01469v1 Figure 20. Unclamped inductive load test circuit L A D G D.U.T. FAST DIODE B B VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 21. Unclamped inductive waveform Figure 22. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 0 DocID026321 Rev 3 10% AM01473v1 9/21 21 Package mechanical data 4 STD2N105K5, STP2N105K5, STU2N105K5 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 10/21 DocID026321 Rev 3 STD2N105K5, STP2N105K5, STU2N105K5 4.1 Package mechanical data DPAK, STD2N105K5 Figure 23. DPAK (TO-252) type A drawing B4 DocID026321 Rev 3 11/21 21 Package mechanical data STD2N105K5, STP2N105K5, STU2N105K5 Table 9. DPAK (TO-252) type A mechanical data mm Dim. Min. Typ. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 E 5.10 6.40 6.60 E1 4.70 e 2.28 e1 4.40 4.60 H 9.35 10.10 L 1.00 1.50 L1 2.80 L2 0.80 L4 0.60 1.00 R V2 12/21 Max. 0.20 0° 8° DocID026321 Rev 3 STD2N105K5, STP2N105K5, STU2N105K5 Package mechanical data Figure 24. DPAK (TO-252) type A footprint (a) )3B4 a. All dimensions are in millimeters DocID026321 Rev 3 13/21 21 Package mechanical data 4.2 STD2N105K5, STP2N105K5, STU2N105K5 TO-220, STP2N105K5 Figure 25. TO-220 type A drawing BW\SH$B5HYB7 14/21 DocID026321 Rev 3 STD2N105K5, STP2N105K5, STU2N105K5 Package mechanical data Table 10. TO-220 type A mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 ∅P 3.75 3.85 Q 2.65 2.95 DocID026321 Rev 3 15/21 21 Package mechanical data 4.3 STD2N105K5, STP2N105K5, STU2N105K5 IPAK, STU2N105K5 Figure 26. IPAK (TO-251) drawing 0068771_L 16/21 DocID026321 Rev 3 STD2N105K5, STP2N105K5, STU2N105K5 Package mechanical data Table 11. IPAK (TO-251) type A mechanical data mm. DIM min. typ. max. A 2.20 2.40 A1 0.90 1.10 b 0.64 0.90 b2 b4 0.95 5.20 B5 5.40 0.30 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 E 6.40 6.60 e e1 2.28 4.40 H 4.60 16.10 L 9.00 9.40 L1 0.80 1.20 L2 0.80 V1 10° DocID026321 Rev 3 1.00 17/21 21 Packaging mechanical data 5 STD2N105K5, STP2N105K5, STU2N105K5 Packaging mechanical data Figure 27. Tape 10 pitches cumulative tolerance on tape +/- 0.2 mm T P0 Top cover tape P2 D E F B1 K0 For machine ref. only including draft and radii concentric around B0 W B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v1 18/21 DocID026321 Rev 3 STD2N105K5, STP2N105K5, STU2N105K5 Packaging mechanical data Figure 28. Reel T REEL DIMENSIONS 40mm min. Access hole At slot location B D C N A Full radius G measured at hub Tape slot in core for tape start 25 mm min. width AM08851v2 Table 12. DPAK (TO-252) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. A0 6.8 7 A B0 10.4 10.6 B 1.5 12.1 C 12.8 1.6 D 20.2 G 16.4 50 B1 Min. Max. 330 13.2 D 1.5 D1 1.5 E 1.65 1.85 N F 7.4 7.6 T K0 2.55 2.75 P0 3.9 4.1 Base qty. 2500 P1 7.9 8.1 Bulk qty. 2500 P2 1.9 2.1 R 40 T 0.25 0.35 W 15.7 16.3 DocID026321 Rev 3 18.4 22.4 19/21 21 Revision history 6 STD2N105K5, STP2N105K5, STU2N105K5 Revision history Table 13. Document revision history 20/21 Date Revision Changes 08-May-2014 1 First release. 14-Nov-2014 2 Document status promoted from preliminary to production data. Updated title, features and description in cover page. Updated Figure 9: Static drain-source on-resistance, Section 4.1: DPAK, STD2N105K5 and Section 4.3: IPAK, STU2N105K5. Minor text changes. 19-Nov-2004 3 Updated VGS in Table 2: Absolute maximum ratings and IGSS in Table 4: On /off states. DocID026321 Rev 3 STD2N105K5, STP2N105K5, STU2N105K5 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2014 STMicroelectronics – All rights reserved DocID026321 Rev 3 21/21 21